CN117317799A - Semiconductor ultraviolet laser - Google Patents
Semiconductor ultraviolet laser Download PDFInfo
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- CN117317799A CN117317799A CN202311312388.4A CN202311312388A CN117317799A CN 117317799 A CN117317799 A CN 117317799A CN 202311312388 A CN202311312388 A CN 202311312388A CN 117317799 A CN117317799 A CN 117317799A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000008859 change Effects 0.000 claims abstract description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 6
- 229910010093 LiAlO Inorganic materials 0.000 claims description 3
- 229910020068 MgAl Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000012886 linear function Methods 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000000969 carrier Substances 0.000 description 2
- 238000001819 mass spectrum Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005472 transition radiation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor ultraviolet laser which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper limiting layer and a p-type contact layer from bottom to top, wherein the p-type contact layer is any one or a plurality of combinations of AlInGaN, alGaN, inGaN, gaN. The invention greatly improves the hole ionization efficiency and hole concentration of the p-type contact layer of the ultraviolet laser, reduces the contact resistance and series resistance of the ultraviolet laser, reduces the voltage of the ultraviolet laser from 8.5V to below 5.6V, and solves the discontinuous or abrupt change phenomenon of junction voltage jump.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor ultraviolet laser.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor ultraviolet laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is greatly different from the nitride semiconductor light-emitting diode, 1) the laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) The current density of the laser reaches KA/cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation drop effect is caused; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different: the light emitting diode generates radiation composite luminescence by transferring electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can perform lasing only when the lasing condition is satisfied, the inversion distribution of carriers in an active area is necessarily satisfied, the stimulated radiation oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss when the threshold condition is satisfied, and finally laser is output.
The nitride semiconductor ultraviolet laser has the following problems: the p-type semiconductor has large Mg acceptor activation energy and low ionization efficiency, the hole concentration is far lower than the electron concentration, and the hole mobility is far lower than the electron mobility, so that the p-type contact layer has high resistivity, the voltage directly contacted with metal (non-transparent oxide layer) is high, the voltage is unstable, and the discontinuous or abrupt change phenomenon of junction voltage jump easily occurs.
Disclosure of Invention
In order to make up for the defects of the prior art, the invention provides a semiconductor ultraviolet laser.
The technical scheme adopted for solving the technical problems is as follows:
the invention relates to a semiconductor ultraviolet laser which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper limiting layer and a p-type contact layer from bottom to top, wherein the p-type contact layer is any one or a plurality of combinations of AlInGaN, alGaN, inGaN, gaN; the Mg doping concentration distribution of the p-type contact layer is y=sinx/x 2 Is a first quadrant curve distribution of (c).
Preferably, the thickness of the p-type contact layer is 5-1000 a/m; the p-type contact layer has a specific Al element distribution, in element distribution, si doping concentration distribution, C element distribution, H element distribution, and O element distribution.
Preferably, the Si doping concentration distribution is a bi-fold nonlinear polyline function distribution, the Al element distribution is a multi-fold nonlinear polyline function distribution, and the In element distribution is a function y=e x sinx curve distribution, C element distribution as a function y=arcmotx curve distribution, O element distribution as a linear function curve distribution, H element distribution as a function y= (a) x -1)/(a x +1)(0<a<1) A curve distribution.
Preferably, the Mg doping concentration profile has a decreasing trend toward the upper limiting layer, and the decreasing angle is α: alpha is more than or equal to 75 degrees and is more than or equal to 35 degrees; the In element distribution peak position is In a descending trend towards the upper limiting layer direction, and the descending angle is theta: the angle theta is more than or equal to 90 degrees and more than or equal to 45 degrees; the O element distribution is in a descending trend towards the upper limiting layer direction, and the descending angle is delta: 60 degrees or more, delta is or more than 5 degrees; the H element is distributed to be in a descending trend towards the upper limiting layer direction, and the descending angle is beta: beta is more than or equal to 60 degrees and more than or equal to 15 degrees; the Si doping concentration distribution is in a descending trend towards the upper limiting layer direction, and the descending angle is ρ:60 DEG or more, rho is equal to or more than 10 DEG; the distribution of the element C is in a descending trend towards the upper limiting layer, and the descending angle is phi 65 degrees or more and phi 25 degrees or more; the Al element distribution is in a descending trend towards the upper limiting layer direction, and the descending angle is gamma: 85 DEG is more than or equal to 40 DEG and gamma is more than or equal to 40 deg.
Preferably, the change angles of the Mg doping concentration distribution, the Al element distribution, the In element distribution, the Si doping concentration distribution, the C element distribution, the H element distribution, and the O element distribution have the following relationship: theta is larger than or equal to gamma is larger than or equal to alpha is larger than or equal to phi is larger than or equal to beta is larger than or equal to rho is larger than or equal to delta.
Preferably, the thickness of the p-type contact layer is 5 to 1000 a.
Preferably, the active layer is a periodic structure consisting of a well layer and a barrier layer, the period number is 3-1, the well layer is any one or more combinations of InGaN, alInGaN, alGaN, gaN, alInN, the thickness is 50-200 m, the barrier layer is any one or more combinations of GaN, alGaN, alInGaN, alN, alInN, the thickness is 20-500 m, and the laser wavelength emitted by the active layer is 200-420 nm.
Preferably, the thickness of the upper waveguide layer and the lower waveguide layer is 20-1000A, and the lower confinement layer, the lower waveguide layer, the active layer, the upper waveguide layer, and the upper confinement layer are GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, or combinations of any one or more thereof.
Preferably, the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
The beneficial effects of the invention are as follows: the invention greatly improves the hole ionization efficiency and hole concentration of the p-type contact layer of the ultraviolet laser, reduces the contact resistance and series resistance of the ultraviolet laser, reduces the voltage of the ultraviolet laser from 8.5V to below 5.6V, and solves the discontinuous or abrupt change phenomenon of junction voltage jump.
Drawings
The invention will be further described with reference to the drawings and embodiments.
FIG. 1 is a schematic diagram of a semiconductor ultraviolet laser according to an embodiment of the present invention;
FIG. 2 is a structural SIMS secondary ion mass spectrum of a semiconductor violet ultraviolet laser according to an embodiment of the present invention;
fig. 3 is a SIMS secondary ion mass spectrum (labeled with doping variation angle) of a semiconductor violet ultraviolet laser structure according to an embodiment of the present invention.
Reference numerals: 100. a substrate; 101. a lower confinement layer; 102. lower waveguide layer by layer; 103. an active layer; 104. upper waveguide layers 105, upper confinement layers 106, p-type contact layers.
Detailed Description
The invention is further described in connection with the following detailed description in order to make the technical means, the creation characteristics, the achievement of the purpose and the effect of the invention easy to understand.
As shown in fig. 1, the semiconductor ultraviolet laser according to the present invention includes, in order from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an upper confinement layer 105, and a p-type contact layer 106, where the p-type contact layer 106 is any one or more combinations of AlInGaN, alGaN, inGaN, gaN. The thickness of the p-type contact layer 106 is 5 to 1000 a; the p-type contact layer 106 has Mg doping concentration distribution, al element distribution, in element distribution, si doping concentration distribution, C element distribution, H element distribution, and O element distribution, so as to realize ohmic contact of the ultraviolet laser, and reduce contact voltage and contact resistance.
In this embodiment, the thicknesses of the upper waveguide layer 104 and the lower waveguide layer 102 are 20 to 1000 a. The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, and the upper confinement layer 105 are GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs, alInAs, alInP, alGaP, inGaP, any one or more combinations thereof. The lower confinement layer 101, the substrate 100 comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
As shown in fig. 2-3, the Mg doping concentration profile is y=sinx/x 2 The Si doping concentration distribution is distributed In a double-break-point nonlinear broken line function, the Al element distribution is distributed In a multi-break-point nonlinear broken line function, and the In element distribution is distributed In a function y=e x sinx curve distribution, C element distribution as a function y=arcmotx curve distribution, O element distribution as a linear function curve distribution, H element distribution as a function y= (a) x -1)/(a x +1)(0<a<1) A curve distribution.
The Mg doping concentration profile is in a decreasing trend toward the upper confinement layer 105, and the decreasing angle is α: alpha is more than or equal to 75 degrees and is more than or equal to 35 degrees; the In element distribution peak position is In a downward trend toward the upper limiting layer 105, and the downward angle is θ: the angle theta is more than or equal to 90 degrees and more than or equal to 45 degrees; the O element distribution is in a downward trend toward the upper limiting layer 105, and the downward angle is δ:60 degrees or more, delta is or more than 5 degrees; the distribution of the H element is in a downward trend toward the upper limiting layer 105, and the downward angle is β: beta is more than or equal to 60 degrees and more than or equal to 15 degrees; the Si doping concentration profile is in a decreasing trend toward the upper confinement layer 105, and the decreasing angle is ρ:60 DEG or more, rho is equal to or more than 10 DEG; the distribution of the element C is in a descending trend towards the upper limiting layer 105, and the descending angle is phi 65 degrees or more and phi 25 degrees or more; the distribution of the Al element is in a descending trend towards the upper limiting layer 105, and the descending angle is gamma: 85 DEG is more than or equal to 40 DEG and gamma is more than or equal to 40 deg.
The change angles of the Mg doping concentration distribution, the Al element distribution, the In element distribution, the Si doping concentration distribution, the C element distribution, the H element distribution and the O element distribution have the following relation: theta is larger than or equal to gamma is larger than or equal to alpha is larger than or equal to phi is larger than or equal to beta is larger than or equal to rho is larger than or equal to delta.
In this embodiment, the active layer 103 is a periodic structure formed by a well layer and a barrier layer, the number of periods is 3 not less than m not less than 1, the well layer is any one or more combinations of InGaN, alInGaN, alGaN, gaN, alInN, the thickness is 50-200 m, the barrier layer is any one or more combinations of GaN, alGaN, alInGaN, alN, alInN, and the thickness is 20-500 m. The laser wavelength emitted by the active layer 103 is the ultraviolet and deep ultraviolet wavelength of 200-420 nm.
In a specific embodiment, the threshold voltage of the laser of the present invention is reduced from 8.5V to 5.6V and the threshold current density is reduced from 3.6kA/cm 2 Down to 1.05kA/cm 2 The series resistance drops from 29 Ω to 11 Ω.
| Violet laser-item | Traditional laser | The laser of the invention | Amplitude of variation |
| Threshold current Density (kA/cm) 2 ) | 3.6 | 1.05 | -71％ |
| Threshold voltage (V) | 8.5 | 5.6 | -34％ |
| Series resistance (omega) | 29 | 11 | -62％ |
The foregoing has shown and described the basic principles, principal features and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present invention, and various changes and modifications may be made without departing from the spirit and scope of the invention, which is defined in the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. The utility model provides a semiconductor purple light ultraviolet laser, includes substrate (100), lower limiting layer (101), lower waveguide layer (102), active layer (103), upper waveguide layer (104), upper limiting layer (105) and p type contact layer (106) from bottom to top in proper order, its characterized in that: the p-type contact layer (106) is any one or more combination of AlInGaN, alGaN, inGaN, gaN; the p-type contact layer (106) has a Mg doping concentration profile of y=sinx/x 2 Is a first quadrant curve distribution of (c).
2. The semiconductor ultraviolet violet laser of claim 1, wherein: the p-type contact layer (106) has a specific Al element distribution, in element distribution, si doping concentration distribution, C element distribution, H element distribution, and O element distribution.
3. A semiconductor violet ultraviolet laser according to claim 2, characterized in that: the Si doping concentration distribution of the p-type contact layer is distributed In a double-break-point nonlinear broken line function, the Al element distribution of the p-type contact layer is distributed In a multi-break-point nonlinear broken line function, and the In element distribution of the p-type contact layer is distributed In a function y=e x sinx curve distribution.
4. A semiconductor violet ultraviolet laser according to claim 2, characterized in that: c element of the p-type contact layerThe distribution is a function y=arcmotx curve, the O element distribution of the p-type contact layer is a linear function curve, and the H element distribution of the p-type contact layer is a function y= (a) x -1)/(a x +1)(0<a<1) A curve distribution.
5. The semiconductor ultraviolet violet laser of claim 1, wherein: the Mg doping concentration distribution of the p-type contact layer is in a descending trend towards the upper limiting layer (105), and the descending angle is alpha: alpha is more than or equal to 75 degrees and is more than or equal to 35 degrees; the In element distribution peak position is In a descending trend towards the upper limiting layer (105), and the descending angle is theta: the angle theta is more than or equal to 90 degrees and more than or equal to 45 degrees; the O element distribution of the p-type contact layer is in a descending trend towards the upper limiting layer (105), and the descending angle is delta: 60 degrees or more, delta is or more than 5 degrees; the H element distribution of the p-type contact layer is in a descending trend towards the upper limiting layer (105), and the descending angle is beta: beta is more than or equal to 60 degrees and more than or equal to 15 degrees; the Si doping concentration distribution of the p-type contact layer is in a descending trend towards the upper limiting layer (105), and the descending angle is ρ:60 DEG or more, rho is equal to or more than 10 DEG; the distribution of C element of the p-type contact layer is in a descending trend towards the upper limiting layer (105), and the descending angle is phi 65 degrees or more and phi 25 degrees or more; the Al element distribution of the p-type contact layer is in a descending trend towards the upper limiting layer (105), and the descending angle is gamma: 85 DEG is more than or equal to 40 DEG and gamma is more than or equal to 40 deg.
6. The semiconductor ultraviolet laser as defined in claim 5, wherein: the change angles of the Mg doping concentration distribution, the Al element distribution, the In element distribution, the Si doping concentration distribution, the C element distribution, the H element distribution and the O element distribution have the following relation: theta is larger than or equal to gamma is larger than or equal to alpha is larger than or equal to phi is larger than or equal to beta is larger than or equal to rho is larger than or equal to delta.
7. The semiconductor ultraviolet laser as defined in claim 4, wherein: the thickness of the p-type contact layer (106) is 5-1000 a.
8. The semiconductor ultraviolet violet laser of claim 1, wherein: the active layer (103) is a periodic structure formed by a well layer and a barrier layer, the period number is 3-1, the well layer is any one or more combinations of InGaN, alInGaN, alGaN, gaN, alInN, the thickness is 50-200 m, the barrier layer is any one or more combinations of GaN, alGaN, alInGaN, alN, alInN, and the thickness is 20-500 m; the laser wavelength emitted by the active layer (103) is the ultraviolet and deep ultraviolet wavelength of 200-420 nm.
9. The semiconductor ultraviolet violet laser of claim 1, wherein: the thickness of the upper waveguide layer (104) and the lower waveguide layer (102) is 20-1000 a; the lower confinement layer (101), the lower waveguide layer (102), the active layer (103), the upper waveguide layer (104), and the upper confinement layer (105) are GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, or combinations of any one or more thereof.
10. The semiconductor ultraviolet violet laser of claim 1, wherein: the substrate (100) comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311312388.4A CN117317799A (en) | 2023-10-11 | 2023-10-11 | Semiconductor ultraviolet laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311312388.4A CN117317799A (en) | 2023-10-11 | 2023-10-11 | Semiconductor ultraviolet laser |
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| Publication Number | Publication Date |
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| CN117317799A true CN117317799A (en) | 2023-12-29 |
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| CN202311312388.4A Pending CN117317799A (en) | 2023-10-11 | 2023-10-11 | Semiconductor ultraviolet laser |
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