CN116454733A - Semiconductor blue light laser - Google Patents
Semiconductor blue light laser Download PDFInfo
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- 230000010287 polarization Effects 0.000 claims abstract description 108
- 230000002269 spontaneous effect Effects 0.000 claims abstract description 50
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- 229910052594 sapphire Inorganic materials 0.000 claims description 12
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- 239000002131 composite material Substances 0.000 claims description 10
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- 229910010093 LiAlO Inorganic materials 0.000 claims description 3
- 229910020068 MgAl Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
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Abstract
The invention provides a semiconductor blue laser which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein an electron effective mass gradient, a piezoelectric polarization coefficient gradient and a spontaneous polarization coefficient gradient are arranged among the lower limiting layer, the lower waveguide layer, the active layer, the upper waveguide layer, the electron blocking layer and the upper limiting layer. The invention can inhibit piezoelectric polarization effect, lighten quantum restriction Stark effect, improve electric laser gain and gain uniformity, inhibit In component fluctuation of an active layer, reduce gain spectrum widening of a laser, improve peak gain, promote InGaN In incorporation and intersolubility gap of InN and GaN by controlling piezoelectric polarization and spontaneous polarization gradient, inhibit InN phase separation and thermal degradation, improve crystal quality and interface quality of a quantum well, reduce non-uniform broadening of a laser spectrum, reduce non-radiative recombination, eliminate optical catastrophe, and promote slope efficiency and service life of the laser.
Description
Technical Field
The application relates to the field of semiconductor photoelectric devices, in particular to a semiconductor blue laser.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is largely different from the nitride semiconductor light emitting diode:
1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level;
2) The current density of the laser reaches KA/cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation drop effect is caused;
3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated;
4) The principle is different: the light emitting diode generates radiation composite luminescence by transferring electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can perform lasing only when the lasing condition is satisfied, the inversion distribution of carriers in an active area is necessarily satisfied, the stimulated radiation oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss when the threshold condition is satisfied, and finally laser is output.
The nitride semiconductor laser has the following problems:
1) The lattice mismatch and strain of the active layer are greatly induced to generate a strong voltage electric polarization effect, a strong QCSE quantum confinement Stark effect is generated, the band-gap of the laser is increased, hole injection is inhibited, the hole is more difficult to transport in a quantum well, the carrier injection is uneven, the gain is uneven, and the improvement of the laser electric lasing gain is limited;
2) The increase of the In component of the quantum well can generate fluctuation and strain of the In component, the gain spectrum of the laser is widened, and the peak gain is reduced; inN bond energy is lower, in incorporation is guaranteed to high In component InGaN at a lower temperature In the growth process, but under the low-temperature growth condition, atomic mobility is low, low-temperature NH3 cracking efficiency and InN and GaN intersolubility gap are large, so that the defect density In the active layer is high, inN phase separation segregation, thermal degradation, component fluctuation and non-ideal crystal quality are caused, the quantum well quality and interface quality are not ideal, the laser spectrum is unevenly widened, and non-radiative recombination center or optical catastrophe is increased. The In component of the quantum well is increased, the thermal stability is deteriorated, the high-temperature p-type semiconductor and the growth of the limiting layer can cause thermal degradation and lattice mismatch of the active layer, the quality and interface quality of the active layer are reduced, the radiation efficiency is reduced, and the service life of the laser is shortened.
Disclosure of Invention
In order to solve one of the above technical problems, the present invention provides a semiconductor blue laser.
The embodiment of the invention provides a semiconductor blue laser, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein an electron effective mass gradient, a piezoelectric polarization coefficient gradient and a spontaneous polarization coefficient gradient are arranged among the lower limiting layer, the lower waveguide layer, the active layer, the upper waveguide layer, the electron blocking layer and the upper limiting layer.
Preferably, the lower confinement layer includes a first sub-lower confinement layer, a second sub-lower confinement layer, a third sub-lower confinement layer, and a fourth sub-lower confinement layer sequentially disposed from bottom to top, where an electron effective mass gradient, a piezoelectric polarization coefficient gradient, and a spontaneous polarization coefficient gradient are disposed between the first sub-lower confinement layer, the second sub-lower confinement layer, the third sub-lower confinement layer, the fourth sub-lower confinement layer, the lower waveguide layer, the active layer, the upper waveguide layer, the electron blocking layer, and the upper confinement layer.
Preferably, the electron effective mass gradient between the first sub-lower confinement layer, the second sub-lower confinement layer, the third sub-lower confinement layer, the fourth sub-lower confinement layer, the lower waveguide layer, the active layer, the upper waveguide layer, the electron blocking layer and the upper confinement layer is: the electron effective mass of the first sub-lower limiting layer is a1, the electron effective mass of the second sub-lower limiting layer is a2, the electron effective mass of the third sub-lower limiting layer is a3, the electron effective mass of the fourth sub-lower limiting layer is a4, the electron effective mass of the lower waveguide layer is b, the electron effective mass of the active layer is c, the electron effective mass of the upper waveguide layer is d, the electron effective mass of the electron blocking layer is e, and the electron effective mass of the upper limiting layer is f.
Preferably, the piezoelectric polarization coefficient gradient between the first sub-lower confinement layer, the second sub-lower confinement layer, the third sub-lower confinement layer, the fourth sub-lower confinement layer, the lower waveguide layer, the active layer, the upper waveguide layer, the electron blocking layer and the upper confinement layer is: the piezoelectric polarization coefficient of the first sub-lower limiting layer is g1, the piezoelectric polarization coefficient of the second sub-lower limiting layer is g2, the piezoelectric polarization coefficient of the third sub-lower limiting layer is g3, the piezoelectric polarization coefficient of the fourth sub-lower limiting layer is g4, the piezoelectric polarization coefficient of the lower waveguide layer is h, the piezoelectric polarization coefficient of the active layer is i, the piezoelectric polarization coefficient of the upper waveguide layer is j, the piezoelectric polarization coefficient of the electron blocking layer is k, and the piezoelectric polarization coefficient of the upper limiting layer is l.
Preferably, the spontaneous polarization coefficient gradient between the first sub-lower confinement layer, the second sub-lower confinement layer, the third sub-lower confinement layer, the fourth sub-lower confinement layer, the lower waveguide layer, the active layer, the upper waveguide layer, the electron blocking layer, and the upper confinement layer is: -0.1-0.3-0 w-1-t-2-u-4-0.01, the spontaneous polarization coefficient of the first sub-lower confinement layer is r1, the spontaneous polarization coefficient of the second sub-lower confinement layer is r2, the spontaneous polarization coefficient of the third sub-lower confinement layer is r3, the fourth sub-lower confinement layer has a spontaneous polarization coefficient r4, the lower waveguide layer has a spontaneous polarization coefficient s, the active layer has a spontaneous polarization coefficient t, the upper waveguide layer has a spontaneous polarization coefficient u, the electron blocking layer has a spontaneous polarization coefficient v, and the upper confinement layer has a spontaneous polarization coefficient w.
Preferably, the active layer is a quantum well formed by a well layer and a barrier layer, and the quantum well period is m is more than or equal to 1 and less than or equal to 3; the well layer of the active layer is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 The thickness of the well layer of the active layer is p is more than or equal to 10 and less than or equal to 100 and is any one or any combination of the p and the BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP; the barrier layer of the active layer is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 The thickness of the barrier layer of the active layer is q is 10-200 m.
Preferably, the lower and upper waveguide layers are GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, and the thickness is 10 to 9000.
Preferably, the lower confinement layer is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 And BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, wherein the thickness z is equal to or more than 10 and equal to or less than 90000.
Preferably, the upper confinement layer and the electron blocking layer are GaN, alGaN, inGaN, alInGaN, alN、InN、AlInN、SiC、Ga 2 O 3 And BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, the thickness of n is not less than 10 and not more than 80000.
Preferably, the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
The beneficial effects of the invention are as follows: the invention suppresses piezoelectric polarization effect, lightens quantum confinement Stark effect, improves electric lasing gain and gain uniformity by designing the effective mass gradient, piezoelectric polarization coefficient gradient and spontaneous polarization coefficient gradient of electrons between the lower limit layer, the lower waveguide layer, the active layer, the upper waveguide layer, the electron blocking layer and the upper limit layer, and simultaneously suppresses In component fluctuation of the active layer, reduces gain spectrum widening of the laser, improves peak gain, and improves In incorporation of InGaN and intersolubility gap of InN and GaN by controlling piezoelectric polarization and spontaneous polarization gradient, suppresses InN phase separation and thermal degradation, improves crystal quality and interface quality of a quantum well, reduces nonuniform broadening of laser spectrum, reduces non-radiative recombination, eliminates optical catastrophe, improves slope efficiency and service life of the laser.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute an undue limitation to the application. In the drawings:
fig. 1 is a schematic structural diagram of a semiconductor blue laser according to an embodiment of the present invention;
fig. 2 is a schematic diagram of another structure of a semiconductor blue laser according to an embodiment of the present invention;
FIG. 3 is a SIMS secondary ion mass spectrum of a semiconductor blue laser according to an embodiment of the present invention;
fig. 4 is a SIMS secondary ion mass spectrum of a local structure of a semiconductor blue laser according to an embodiment of the present invention;
FIG. 5 is a TEM transmission electron microscope image of the lower confinement layer of the semiconductor blue laser according to the embodiment of the present invention;
FIG. 6 is a TEM transmission electron microscope of the lower waveguide layer of the semiconductor blue laser according to the embodiment of the present invention;
fig. 7 is a TEM transmission electron microscope image of an active layer of a semiconductor blue laser according to an embodiment of the present invention;
FIG. 8 is a TEM transmission electron microscope of the upper waveguide layer of the semiconductor blue laser according to the embodiment of the present invention;
FIG. 9 is a TEM transmission electron microscope image of an electron blocking layer of a semiconductor blue laser according to an embodiment of the present invention;
fig. 10 is a TEM transmission electron microscope image of the upper confinement layer of the semiconductor blue laser according to the embodiment of the present invention.
Reference numerals:
100. a substrate, 101, a lower confinement layer, 102, a lower waveguide layer, 103, an active layer, 104, an upper waveguide layer, 105, an electron blocking layer, 106, an upper confinement layer;
101a, a first sub-lower confinement layer, 101b, a second sub-lower confinement layer, 101c, a third sub-lower confinement layer, 101d, a fourth sub-lower confinement layer.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is given with reference to the accompanying drawings, and it is apparent that the described embodiments are only some of the embodiments of the present application and not exhaustive of all the embodiments. It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other.
As shown in fig. 1, the present embodiment proposes a semiconductor blue laser including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 disposed in this order from bottom to top.
Specifically, in the present embodiment, the lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 each have electron effective mass, piezoelectric polarization, and spontaneous polarization parameter characteristics. In addition, the effective mass of electrons, piezoelectric polarization and spontaneous polarization can affect important properties such as piezoelectric polarization effect and slope efficiency of the laser.
The effective mass of electrons is the effective mass of electrons, and when the electrons in the semiconductor are subjected to external force, the electrons are subjected to external force, and interaction with atoms and electrons in the semiconductor is performed, so that the relationship between solving force and speed becomes difficult. The introduction of effective mass can summarize the effect of the internal potential field of the semiconductor, so that the internal potential field effect may not be involved when solving the rule of the semiconductor under the action of external force.
Piezoelectric polarization refers to the phenomenon that when some dielectrics are deformed by external force in a certain direction, polarization occurs in the dielectric, and opposite charges are generated on two opposite surfaces of the dielectric. When the external force is removed, it returns to an uncharged state, a phenomenon known as the positive piezoelectric effect. When the direction of the force changes, the polarity of the charge changes. Conversely, when an electric field is applied in the polarization direction of the dielectrics, these dielectrics are deformed, and after the electric field is removed, the deformation of the dielectrics is eliminated, and this phenomenon is called the inverse piezoelectric effect.
Spontaneous polarization refers to a polarization state not caused by an external electric field but caused by the internal structure of the crystal. Specifically, positive and negative charge centers in a unit cell are not overlapped in a certain temperature range to form dipole moment, and the dipole moment presents polarity. This polarization phenomenon that exists without the action of an external electric field is called spontaneous polarization.
The embodiment designs the effective mass gradient of electrons, the piezoelectric polarization coefficient gradient and the spontaneous polarization coefficient gradient between the lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105 and the upper confinement layer 106 based on the characteristics of effective mass of electrons, piezoelectric polarization and spontaneous polarization, thereby achieving the purposes of suppressing piezoelectric polarization effect, improving slope efficiency of the laser, and the like.
Specifically, as shown in fig. 2 to 10, in the present embodiment, the lower confinement layer 101 specifically includes a first sub-lower confinement layer 101a, a second sub-lower confinement layer 101b, a third sub-lower confinement layer 101c, and a fourth sub-lower confinement layer 101d, which are disposed in this order from bottom to top. The first sub-lower confinement layer 101a, the second sub-lower confinement layer 101b, the third sub-lower confinement layer 101c, the fourth sub-lower confinement layer 101d, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 have an electron effective mass gradient, a piezoelectric polarization coefficient gradient, and a spontaneous polarization coefficient gradient therebetween, and the specific electron effective mass gradient, piezoelectric polarization coefficient gradient, and spontaneous polarization coefficient gradient are expressed as follows:
the electron effective mass gradient between the first sub-lower confinement layer 101a, the second sub-lower confinement layer 101b, the third sub-lower confinement layer 101c, the fourth sub-lower confinement layer 101d, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 is: 0.05.ltoreq.ca2.ltoreq.bda4.ltoreq.a1.ltoreq.fa3.ltoreq.a3.ltoreq.0.5. The electron effective mass of the first sub-lower confinement layer 101a is a1, the electron effective mass of the second sub-lower confinement layer 101b is a2, the electron effective mass of the third sub-lower confinement layer 101c is a3, the electron effective mass of the fourth sub-lower confinement layer 101d is a4, the electron effective mass of the lower waveguide layer 102 is b, the electron effective mass of the active layer 103 is c, the electron effective mass of the upper waveguide layer 104 is d, the electron effective mass of the electron blocking layer 105 is e, and the electron effective mass of the upper confinement layer 106 is f.
The piezoelectric polarization coefficient gradient between the first sub-lower confinement layer 101a, the second sub-lower confinement layer 101b, the third sub-lower confinement layer 101c, the fourth sub-lower confinement layer 101d, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 is: g4 is more than or equal to 0.5 and less than or equal to j is more than or equal to h is more than or equal to g2 is more than or equal to i and g1 is more than or equal to 1 and k is more than or equal to 3 and g is more than or equal to 1.5. Wherein, the piezoelectric polarization coefficient of the first sub-lower confinement layer 101a is g1, the piezoelectric polarization coefficient of the second sub-lower confinement layer 101b is g2, the piezoelectric polarization coefficient of the third sub-lower confinement layer 101c is g3, the piezoelectric polarization coefficient of the fourth sub-lower confinement layer 101d is g4, the piezoelectric polarization coefficient of the lower waveguide layer 102 is h, the piezoelectric polarization coefficient of the active layer 103 is i, the piezoelectric polarization coefficient of the upper waveguide layer 104 is j, the piezoelectric polarization coefficient of the electron blocking layer 105 is k, and the piezoelectric polarization coefficient of the upper confinement layer 106 is l.
The gradient of spontaneous polarization coefficient between the first sub-lower confinement layer 101a, the second sub-lower confinement layer 101b, the third sub-lower confinement layer 101c, the fourth sub-lower confinement layer 101d, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 is: -0.1.ltoreq.r3.ltoreq.v.ltoreq.w.ltoreq.r1.ltoreq.t r2 is more than or equal to less than or equal to s is more than or equal to less than or equal to r4 is more than or equal to-0.01. Wherein the spontaneous polarization coefficient of the first sub-lower confinement layer 101a is r1, the spontaneous polarization coefficient of the second sub-lower confinement layer 101b is r2, the spontaneous polarization coefficient of the third sub-lower confinement layer 101c is r3, the spontaneous polarization coefficient of the fourth sub-lower confinement layer 101d is r4, the spontaneous polarization coefficient of the lower waveguide layer 102 is s, the spontaneous polarization coefficient of the active layer 103 is t, the spontaneous polarization coefficient of the upper waveguide layer 104 is u, the spontaneous polarization coefficient of the electron blocking layer 105 is v, and the spontaneous polarization coefficient of the upper confinement layer 106 is w.
In this embodiment, the lower confinement layer 101 is designed into a four-layer sub confinement layer structure, so as to improve the optical field confinement effect, inhibit the leakage of the optical field mode, and simultaneously alleviate lattice mismatch and improve the problems of cracks, surface anomalies and the like. On the basis, the lower confinement layer 101 combines the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105 and the upper confinement layer 106 to design an electron effective mass gradient, a piezoelectric polarization coefficient gradient and a spontaneous polarization coefficient gradient, which can effectively inhibit piezoelectric polarization effect, alleviate quantum confinement Stark effect, promote electric laser gain and gain uniformity, simultaneously inhibit In component fluctuation of the active layer 103, reduce gain spectrum widening of the laser, promote peak gain, and promote InN incorporation and InN and GaN intersolubility gap by controlling the piezoelectric polarization and the spontaneous polarization gradient, inhibit InN phase separation and thermal degradation, promote crystal quality and interface quality of a quantum well, reduce non-uniform broadening of a laser spectrum, reduce non-radiative recombination, eliminate optical disaster, promote slope efficiency and service life of the laser.
As shown in the following table, in this embodiment, by designing the electron effective mass gradient, the piezoelectric polarization coefficient gradient, and the spontaneous polarization coefficient gradient between the lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106, the slope efficiency of the blue laser is improved from 1.1W/a to 2.09W/a by 90%; the optical power is increased from 3.5W to 6.6W by about 89%;1000H aged light attenuation is increased from 35% to 5%, by about 86%; the external quantum efficiency is improved from 31.5% to 78.9%, and the external quantum efficiency is improved by about 55%; the threshold current density was reduced from 2.4kA/cm2 to 0.69kA/cm2 by about 71%.
Further, in this embodiment, the active layer 103 is a quantum well composed of a well layer and a barrier layer, and the quantum well period is m 1-3. The well layer of the active layer 103 is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP. The thickness of the well layer of the active layer 103 is p.ltoreq.p.ltoreq.100. Mu.m. The barrier layer of the active layer 103 is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP. The barrier layer of the active layer 103 has a thickness q of 10 < q > 200 < q.
The waveguide layer and upper waveguide layer 104 are GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, and the thickness is 10 to 9000.
The lower confinement layer 101 is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 、BN、GaAs、GaP、InP、AlGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, the thickness is z is more than or equal to 10 and less than or equal to 90000.
Upper confinement layer 106 and electron blocking layer 105 are GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 And BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, the thickness of n is not less than 10 and not more than 80000.
The substrate 100 includes sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present application without departing from the spirit or scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims and the equivalents thereof, the present application is intended to cover such modifications and variations.
Claims (10)
1. The semiconductor blue laser is characterized by comprising a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein an electron effective mass gradient, a piezoelectric polarization coefficient gradient and a spontaneous polarization coefficient gradient are arranged among the lower limiting layer, the lower waveguide layer, the active layer, the upper waveguide layer, the electron blocking layer and the upper limiting layer.
2. The semiconductor blue laser according to claim 1, wherein said lower confinement layer comprises a first sub-lower confinement layer, a second sub-lower confinement layer, a third sub-lower confinement layer and a fourth sub-lower confinement layer disposed in this order from bottom to top, said first sub-lower confinement layer, second sub-lower confinement layer, third sub-lower confinement layer, fourth sub-lower confinement layer, lower waveguide layer, active layer, upper waveguide layer, electron blocking layer and upper confinement layer having an electron effective mass gradient, a piezoelectric polarization coefficient gradient and a spontaneous polarization coefficient gradient therebetween.
3. The semiconductor blue laser according to claim 2, wherein an electron effective mass gradient between said first sub-lower confinement layer, said second sub-lower confinement layer, said third sub-lower confinement layer, said fourth sub-lower confinement layer, said lower waveguide layer, said active layer, said upper waveguide layer, said electron blocking layer and said upper confinement layer is: the electron effective mass of the first sub-lower limiting layer is a1, the electron effective mass of the second sub-lower limiting layer is a2, the electron effective mass of the third sub-lower limiting layer is a3, the electron effective mass of the fourth sub-lower limiting layer is a4, the electron effective mass of the lower waveguide layer is b, the electron effective mass of the active layer is c, the electron effective mass of the upper waveguide layer is d, the electron effective mass of the electron blocking layer is e, and the electron effective mass of the upper limiting layer is f.
4. The semiconductor blue laser according to claim 2, wherein a piezoelectric polarization coefficient gradient between the first sub-lower confinement layer, the second sub-lower confinement layer, the third sub-lower confinement layer, the fourth sub-lower confinement layer, the lower waveguide layer, the active layer, the upper waveguide layer, the electron blocking layer, and the upper confinement layer is: the piezoelectric polarization coefficient of the first sub-lower limiting layer is g1, the piezoelectric polarization coefficient of the second sub-lower limiting layer is g2, the piezoelectric polarization coefficient of the third sub-lower limiting layer is g3, the piezoelectric polarization coefficient of the fourth sub-lower limiting layer is g4, the piezoelectric polarization coefficient of the lower waveguide layer is h, the piezoelectric polarization coefficient of the active layer is i, the piezoelectric polarization coefficient of the upper waveguide layer is j, the piezoelectric polarization coefficient of the electron blocking layer is k, and the piezoelectric polarization coefficient of the upper limiting layer is l.
5. The semiconductor blue laser according to claim 2, wherein a spontaneous polarization coefficient gradient between said first sub-lower confinement layer, said second sub-lower confinement layer, said third sub-lower confinement layer, said fourth sub-lower confinement layer, said lower waveguide layer, said active layer, said upper waveguide layer, said electron blocking layer and said upper confinement layer is: -0.1-0.3-0 w-1-t-2-u-4-0.01, the spontaneous polarization coefficient of the first sub-lower confinement layer is r1, the spontaneous polarization coefficient of the second sub-lower confinement layer is r2, the spontaneous polarization coefficient of the third sub-lower confinement layer is r3, the fourth sub-lower confinement layer has a spontaneous polarization coefficient r4, the lower waveguide layer has a spontaneous polarization coefficient s, the active layer has a spontaneous polarization coefficient t, the upper waveguide layer has a spontaneous polarization coefficient u, the electron blocking layer has a spontaneous polarization coefficient v, and the upper confinement layer has a spontaneous polarization coefficient w.
6. The semiconductor blue laser according to claim 1, wherein the active layer is a quantum well composed of a well layer and a barrier layer, and the quantum well period is m.1.ltoreq.m.ltoreq.3; the well layer of the active layer is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 The thickness of the well layer of the active layer is p is more than or equal to 10 and less than or equal to 100 and is any one or any combination of the p and the BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP; the barrier layer of the active layer is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 The thickness of the barrier layer of the active layer is q is 10-200 m.
7. The semiconductor blue laser according to claim 1, wherein said lower and upper waveguide layers are GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, and the thickness is 10 to 9000.
8. The semiconductor blue laser according to claim 1, wherein said lower portionThe limiting layer is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 And BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, wherein the thickness z is equal to or more than 10 and equal to or less than 90000.
9. The semiconductor blue laser according to claim 1, wherein said upper confinement layer and electron blocking layer are GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 And BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, the thickness of n is not less than 10 and not more than 80000.
10. The semiconductor blue laser according to claim 1, wherein said substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
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