CN116505375A - Semiconductor laser - Google Patents
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- CN116505375A CN116505375A CN202310513439.3A CN202310513439A CN116505375A CN 116505375 A CN116505375 A CN 116505375A CN 202310513439 A CN202310513439 A CN 202310513439A CN 116505375 A CN116505375 A CN 116505375A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 230000000903 blocking effect Effects 0.000 claims abstract description 27
- 230000031700 light absorption Effects 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000002401 inhibitory effect Effects 0.000 claims abstract description 12
- 239000012535 impurity Substances 0.000 claims description 33
- 239000011777 magnesium Substances 0.000 claims description 27
- 230000007423 decrease Effects 0.000 claims description 16
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052596 spinel Inorganic materials 0.000 claims description 6
- 229910010936 LiGaO2 Inorganic materials 0.000 claims description 3
- 229910026161 MgAl2O4 Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- -1 magnesium aluminate Chemical class 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
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- 230000000694 effects Effects 0.000 abstract description 12
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a semiconductor laser, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially connected from bottom to top, wherein at least one light absorption inhibiting layer is arranged between the upper waveguide layer and the electron blocking layer. The semiconductor laser provided by the invention has the advantages that at least one light absorption inhibition layer is arranged between the upper waveguide layer and the electron blocking layer, so that the diffusion of Mg of the electron blocking layer to the upper waveguide layer and the active layer can be blocked, the Mg self-compensation effect of the upper waveguide layer can be blocked, the light absorption loss can be inhibited, and the oscillation threshold of the laser can be reduced; the injection efficiency of holes can be improved, the carrier delocalization is improved, the concentration difference between electrons and holes of the active layer is enhanced, the carrier distribution uniformity of the active layer is improved, and the luminous efficiency and the slope efficiency of the laser are improved.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor laser.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The types of lasers are many, and the classification modes are also various, and mainly include solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like. The semiconductor laser is largely different from the nitride semiconductor light emitting diode: 1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) The current density of the laser reaches KA/cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation drop effect is caused; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different: the light emitting diode generates radiation composite luminescence by electron hole transition to a quantum well or a p-n junction under the action of external voltage, and the laser can perform lasing under the condition that the lasing condition is satisfied, the inversion distribution of carriers in an active area is required to be satisfied, stimulated radiation light oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss by satisfying a threshold condition, and finally laser is output.
However, nitride semiconductor lasers have the following problems: 1) The internal lattice mismatch is large, the strain is large, the polarization effect is strong, and the QCSE quantum confinement Stark effect is strong, so that the improvement of the electric lasing gain of the laser is limited; 2) The p-type semiconductor has the advantages that the Mg acceptor activation energy is large, the ionization efficiency is low, the hole concentration is far lower than the electron concentration, the hole mobility is far lower than the electron mobility, the serious asymmetric mismatch of electron holes in the quantum well is caused, the hole injection efficiency is low, and carriers are delocalized; 3) The absorption loss of the optical waveguide is high, the inherent carbon impurities compensate acceptors in the p-type semiconductor, damage the p-type semiconductor and the like, the ionization rate of the p-type doping is low, and a large amount of unionized Mg acceptor impurities are one of main sources of internal optical loss.
Disclosure of Invention
The invention aims to provide a semiconductor laser to solve the technical problems, and at least one light absorption inhibiting layer is arranged between an upper waveguide layer and an electron blocking layer to prevent Mg of the electron blocking layer from diffusing to the upper waveguide layer and an active layer and to block the Mg self-compensation effect of the upper waveguide layer, so that light absorption loss can be inhibited and the oscillation threshold of the laser can be reduced.
In order to solve the technical problems, the invention provides a semiconductor laser, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially connected from bottom to top, wherein at least one light absorption inhibiting layer is arranged between the upper waveguide layer and the electron blocking layer.
According to the scheme, at least one light absorption inhibiting layer is arranged between the upper waveguide layer and the electron blocking layer, so that Mg of the electron blocking layer can be prevented from diffusing to the upper waveguide layer and the active layer, the Mg self-compensation effect of the upper waveguide layer is blocked, light absorption loss can be inhibited, and the oscillation threshold of the laser is reduced.
Further, the active layer is a periodic structure consisting of a well layer and a barrier layer, and the period number m of the active layer is more than or equal to 1 and more than or equal to 3.
In the scheme, the number of the periods of the active layer of the laser is set to be not more than 3, so that heat accumulation caused by excessive quantum wells in the active layer can be effectively avoided, the problem of burning out the laser is solved, and the service life of the device is prolonged; meanwhile, excessive quantum well logarithm can enable In component to fluctuate, half-width becomes large, laser generates multiple modes, the number of periods of an active layer of the laser is set to be not more than 3, quality of the active layer can be guaranteed, wavelength half-width of laser lasing is narrow, and single-mode emission is formed.
Further, the well layer is any one or any combination of InGaN or GaN, and the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN.
In the above scheme, the thickness of the well layer may be set to 10 to 80 a/m, and the thickness of the barrier layer may be set to 10 to 120 a/m.
Further, the light absorption inhibiting layer is composed of one or any combination of AlInGaN, alGaN, inGaN, alInN whose Al composition abruptly drops linearly, mg doping concentration abruptly drops linearly, H impurity concentration abruptly drops linearly, and C impurity concentration abruptly drops linearly.
Further, the abrupt linear decrease of the Al component is specifically: the abrupt angle of the Al component is an included angle alpha between a descending line and a horizontal line, wherein: the angle alpha is more than or equal to 90 degrees and more than or equal to 30 degrees.
Further, the abrupt linear decrease in the H impurity concentration is specifically: the abrupt change angle of the H impurity concentration is the included angle beta between the descending line and the horizontal line, wherein the included angle beta is more than or equal to 90 degrees and more than or equal to 30 degrees.
Further, the abrupt linear decrease of Mg doping concentration is specifically: the Mg doping concentration abrupt angle is the angle γ between the falling line and the horizontal line, wherein: the angle gamma is more than or equal to 90 degrees and more than or equal to 30 degrees.
Further, the abrupt linear decrease in the concentration of C impurity is specifically: the concentration of the C impurity suddenly drops linearly, and the concentration suddenly changing angle of the C impurity is the included angle theta between the dropping line and the horizontal line, wherein the theta is more than or equal to 90 degrees and more than or equal to 30 degrees.
In the scheme, the light absorption inhibiting layer forms a steep interface between the upper waveguide layer and the electron blocking layer through the Al component abrupt change, the Mg doping concentration abrupt change, the H impurity concentration abrupt change and the C impurity concentration abrupt change with the angle of more than 30 degrees and less than 90 degrees, so that the diffusion of Mg of the electron blocking layer to the upper waveguide layer and the active layer can be blocked, the Mg self-compensation effect of the upper waveguide layer can be blocked, the light absorption loss can be inhibited, and the oscillation threshold of the laser can be reduced.
Further, the lower confinement layer, the lower waveguide layer, the active layer, the upper waveguide layer, the electron blocking layer and the upper confinement layer are all formed by any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga2O3 and BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
Further, the substrate includes any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a magnesium aluminate spinel MgAl2O4, mgO, znO, zrB2, liAlO2, and a LiGaO2 composite substrate.
The scheme can also improve the injection efficiency of holes and the localization of carriers, enhance the concentration difference between electrons and holes of the active layer and improve the carrier distribution uniformity of the active layer, thereby improving the luminous efficiency and the slope efficiency of the laser.
Drawings
Fig. 1 is a schematic diagram of a semiconductor laser according to an embodiment of the present invention;
fig. 2 is a schematic diagram of SIMS secondary ion mass spectrometry of a semiconductor laser according to an embodiment of the present invention;
FIG. 3 is a schematic view illustrating an abrupt angle of a semiconductor laser structure according to an embodiment of the present invention;
FIG. 4 is a TEM transmission electron microscope image of a semiconductor laser active layer according to an embodiment of the present invention;
wherein: 100. a substrate; 101. a lower confinement layer; 102. a lower waveguide layer; 103. an active layer; 104. an upper waveguide layer; 105. an electron blocking layer; 106. an upper confinement layer; 107. a light absorption inhibiting layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, the present embodiment provides a semiconductor laser, which includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 108, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 sequentially connected from bottom to top, and at least one light absorption inhibiting layer 107 is disposed between the upper waveguide layer 104 and the electron blocking layer 105.
In this embodiment, at least one light absorption inhibiting layer 107 is disposed between the upper waveguide layer 104 and the electron blocking layer 105, so as to prevent Mg of the electron blocking layer 105 from diffusing into the upper waveguide layer 104 and the active layer 103, block the Mg self-compensation effect of the upper waveguide layer 104, inhibit light absorption loss, and reduce the oscillation threshold of the laser.
Further, the active layer 103 is a periodic structure formed by a well layer and a barrier layer, and the period number m of the active layer is more than or equal to 1 and more than or equal to 3.
In this embodiment, the number of periods of the laser active layer 103 is set to be not more than 3, which can effectively avoid heat accumulation caused by excessive quantum wells in the active layer 103, so that the problem of burning out the laser occurs, and the service life of the device is prolonged; meanwhile, excessive quantum well logarithm can enable In component to fluctuate, half-width becomes large, laser generates multiple modes, the number of periods of the laser active layer 103 is set to be not more than 3, quality of the active layer 103 can be guaranteed, wavelength half-width of laser lasing is enabled to be narrow, and single-mode emission is formed.
Further, the well layer is any one or any combination of InGaN or GaN, and the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN.
In this embodiment, the thickness of the well layer may be set to 10 to 80 a/m, and the thickness of the barrier layer may be set to 10 to 120 a/m.
Further, the light absorption inhibiting layer 107 is constituted by one or any combination of AlInGaN, alGaN, inGaN, alInN whose Al composition abruptly drops linearly, mg doping concentration abruptly drops linearly, H impurity concentration abruptly drops linearly, and C impurity concentration abruptly drops linearly. Fig. 2 provides a schematic diagram of the SIMS secondary ion mass spectrum of the structure of the semiconductor laser to be described, and it is easily understood from fig. 2 that in the light absorption suppression layer 107, there are a sharp drop in Al composition, a sharp drop in Mg doping concentration, a sharp drop in H impurity concentration, and a sharp drop in C impurity concentration.
Further, the abrupt linear decrease of the Al component is specifically: the abrupt angle of the Al component is an included angle alpha between a descending line and a horizontal line, wherein: the angle alpha is more than or equal to 90 degrees and more than or equal to 30 degrees.
Further, the abrupt linear decrease in the H impurity concentration is specifically: the abrupt change angle of the H impurity concentration is the included angle beta between the descending line and the horizontal line, wherein the included angle beta is more than or equal to 90 degrees and more than or equal to 30 degrees.
Further, the abrupt linear decrease of Mg doping concentration is specifically: the Mg doping concentration abrupt angle is the angle γ between the falling line and the horizontal line, wherein: the angle gamma is more than or equal to 90 degrees and more than or equal to 30 degrees.
Further, the abrupt linear decrease in the concentration of C impurity is specifically: the concentration of the C impurity suddenly drops linearly, and the concentration suddenly changing angle of the C impurity is the included angle theta between the dropping line and the horizontal line, wherein the theta is more than or equal to 90 degrees and more than or equal to 30 degrees.
It should be noted that, the positions of the included angle α, the included angle β, the included angle γ, and the included angle θ can be shown in fig. 3.
In this embodiment, the light absorption suppression layer 107 forms a steep interface between the upper waveguide layer 104 and the electron blocking layer 105 through an Al composition dip, an Mg doping concentration dip, an H impurity concentration dip, and a C impurity concentration dip angle of 30 ° or more and 90 ° or less, so that Mg of the electron blocking layer 105 can be blocked from diffusing into the upper waveguide layer 104 and the active layer 103, mg self-compensation effect of the upper waveguide layer 104 can be blocked, light absorption loss can be suppressed, and laser oscillation threshold can be reduced.
Further, the lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 are formed by any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga O3 and BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
Further, the substrate 100 includes any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, sapphire/SiNx, magnesium aluminate spinel MgAl2O4, mgO, znO, zrB2, liAlO2, and LiGaO2 composite substrates.
The above embodiment forms the steep interface of Al component, the steep interface of H impurity and C impurity, and the steep interface of Mg doping by setting the angle combination of the change of Al component, the change of H impurity concentration, the change of Mg doping concentration, and the change of C impurity concentration, thereby achieving the effect of blocking Mg diffusion of the electron blocking layer 105 toward the upper waveguide layer 104 and the active layer 103, blocking the Mg self-compensation effect of the upper waveguide layer 104, and further suppressing light absorption and lowering the laser oscillation threshold. The injection efficiency of holes can be improved, the carrier delocalization is improved, the concentration difference between electrons and holes of the active layer 103 is enhanced, the carrier distribution uniformity of the active layer 103 is improved, and therefore the luminous efficiency and the slope efficiency of the laser are improved.
To further describe the technical gist of the present invention, the present embodiment provides a TEM transmission electron microscope image of the active layer 103, and particularly please refer to fig. 4, which shows that the active layer and the corresponding light absorption inhibiting layer 107 provided in the present embodiment can be substantially constructed, which is a practical mass production structure, and can ensure mass production.
Further, in order to highlight the technical advantages of the technical scheme, the performance of the laser provided by the invention is compared with that of the traditional laser in the transverse direction, and the comparison result can be seen in table 1.
Table 1 performance comparison table of the inventive laser and the conventional laser
Through comparison, the laser provided by the invention can effectively inhibit light absorption loss, and the internal optical loss is reduced from 80cm < -1 > to 20% cm < -1 >, which is reduced by about 75%; the oscillation threshold can be lowered, the threshold current density is lowered by about 54%, and the threshold voltage is lowered by about 24%; allowing internal optical absorption losses of the laser to be from about 80cm -1 Down to 20cm -1 The internal optical loss is reduced by about 75%; the injection efficiency of holes can be improved, the carrier delocalization is improved, the concentration difference between electrons and holes of the active layer is enhanced, and the carrier distribution uniformity of the active layer is improved, so that the luminous efficiency and the slope efficiency of the laser are improved, the optical power is improved by about 38%, and the external quantum efficiency is improved by about 51%.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.
Claims (10)
1. A semiconductor laser comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially connected from bottom to top, and is characterized in that at least one light absorption inhibiting layer is arranged between the upper waveguide layer and the electron blocking layer.
2. The semiconductor laser according to claim 1, wherein the active layer is a periodic structure comprising a well layer and a barrier layer, and the number m of periods satisfies 1.gtoreq.m.gtoreq.3.
3. The semiconductor laser of claim 2, wherein the well layer is any one or any combination of InGaN or GaN and the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN.
4. A semiconductor laser according to any one of claims 1 to 3, wherein the light absorption suppression layer is composed of one or any combination of AlInGaN, alGaN, inGaN, alInN whose Al composition abruptly decreases linearly, mg doping concentration abruptly decreases linearly, H impurity concentration abruptly decreases linearly, and C impurity concentration abruptly decreases linearly.
5. A semiconductor laser as claimed in claim 4, wherein the abrupt linear decrease in Al composition is in particular: the abrupt angle of the Al component is an included angle alpha between a descending line and a horizontal line, wherein: the angle alpha is more than or equal to 90 degrees and more than or equal to 30 degrees.
6. A semiconductor laser as claimed in claim 4, wherein the abrupt linear decrease in H impurity concentration is specifically: the abrupt change angle of the H impurity concentration is the included angle beta between the descending line and the horizontal line, wherein the included angle beta is more than or equal to 90 degrees and more than or equal to 30 degrees.
7. A semiconductor laser as claimed in claim 4, wherein the abrupt linear decrease in Mg doping concentration is in particular: the Mg doping concentration abrupt angle is the angle γ between the falling line and the horizontal line, wherein: the angle gamma is more than or equal to 90 degrees and more than or equal to 30 degrees.
8. A semiconductor laser as claimed in claim 4, wherein the abrupt linear decrease in C impurity concentration is specifically: the concentration of the C impurity suddenly drops linearly, and the concentration suddenly changing angle of the C impurity is the included angle theta between the dropping line and the horizontal line, wherein the theta is more than or equal to 90 degrees and more than or equal to 30 degrees.
9. A semiconductor laser as claimed in claim 4 wherein the lower confinement layer, lower waveguide layer, active layer, upper waveguide layer, electron blocking layer and upper confinement layer are each formed using any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga O3 and BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
10. A semiconductor laser as claimed in claim 9 wherein the substrate comprises any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, magnesium aluminate spinel MgAl2O4, mgO, znO, zrB2, liAlO2 and LiGaO2 composite substrate.
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|---|---|---|---|
| CN202310513439.3A CN116505375A (en) | 2023-05-09 | 2023-05-09 | Semiconductor laser |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310513439.3A CN116505375A (en) | 2023-05-09 | 2023-05-09 | Semiconductor laser |
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| CN116505375A true CN116505375A (en) | 2023-07-28 |
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| CN202310513439.3A Pending CN116505375A (en) | 2023-05-09 | 2023-05-09 | Semiconductor laser |
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