CN109193344A - A kind of semiconductor laser and its manufacturing method with anti-ducting layer structure - Google Patents
A kind of semiconductor laser and its manufacturing method with anti-ducting layer structure Download PDFInfo
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- CN109193344A CN109193344A CN201811277048.1A CN201811277048A CN109193344A CN 109193344 A CN109193344 A CN 109193344A CN 201811277048 A CN201811277048 A CN 201811277048A CN 109193344 A CN109193344 A CN 109193344A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/205—Antiguided structures
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Optics & Photonics (AREA)
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- Semiconductor Lasers (AREA)
Abstract
The present invention provides a kind of semiconductor laser and its manufacturing method with anti-ducting layer, the program includes substrate, epitaxial layer, the opposite ducting layer in side, front cavity surface and rear facet；Epitaxial layer is arranged on the top surface of a substrate；Front cavity surface is arranged on the one side of substrate；The rear facet is arranged in the side of substrate of front cavity surface opposite side；The bar shaped Congestion Area of protrusion is provided on epitaxial layer；In the two sides of bar shaped Congestion Area, at least side is provided with anti-ducting layer；Anti- ducting layer is arranged on epitaxial layer.The program can preferably inhibit higher order mode than present mode control technology earthquake area two sides, so as to improve beam quality, improve the brightness of semiconductor laser.
Description
Technical field
The present invention relates to semiconductor laser design manufacturing field, especially a kind of semiconductor with anti-ducting layer
Laser and its manufacturing method.
Background technique
Semiconductor laser high, small in size, high reliability with electrical efficiency, in pumped solid laser, industry
The fields such as processing, medical treatment, space communication have important application.As pumping high-brightness fiber-optic laser, Spectral beam combining etc. are newly answered
The novel high brightness semiconductor laser with high power, high light beam quality characteristic is proposed higher with the appearance of scene
It is required that.For most common wide luminous zone semiconductor laser, the difficult point for improving brightness is: although power is higher by (10~25
W it), but by factors such as higher order mode, Filamentous luminescent effects being influenced, slow-axis direction (x-axis direction in attached drawing 1) beam quality is poor,
Usually larger (7 °~12 °), the brightness for limiting semiconductor laser improves slow axis divergence.From influence semiconductor laser light
The factor analysis of beam quality, higher order mode number is fewer, and beam quality is better, therefore Mode Control Technology is that high-brightness semiconductor swashs
The hot spot of light research field.Common semiconductor laser Mode Control Technology includes the following categories:
1, two-dimensional electrode structure.This method is to make two-dimensional electrode structure in semiconductor laser chip P wheat flour to control electric current injection.
2016, Chinese Academy of Sciences Wang Tao et al. controlled the lateral angle of divergence using Two-dimensional current injecting structure, obtained 36% light beam matter
Amount improves.But this method needs to etch 3 microns of two-dimensional electrode structures of fabrication cycle, and technology difficulty is larger.
2、H+Ion implantation technique.This method is used in semiconductor laser chip Congestion Area two sides injection H+Ion plays control
Make the effect of lateral carrier accumulation.2015, the fast photoelectricity company of Americanologist used H+Ion implanting mode inhibits lateral current-carrying
Subproduct is tired, 6.9 ° of slow axis divergence is obtained, so that lateral linear power density is increased to 3.5 W/mm × mrad.But this method
It needs using ion implantation device costly, processing cost is higher.
3, external cavity feedback formula laser.The technical principle is to control laser transverse mode by external cavity feedback, partly leading
Body laser filters out intracavitary high-order oscillation mode as gain media, using active area as spatial filter, reaches high brightness and swashs
The purpose of light output.2011, German FBH research institute AI Bawamia et al. can be achieved 132 using the technical solution at present
MW/(cm2Sr high brightness laser output).But this method needs to increase sharp using complicated external cavity grating feedback is added
Light body product, also reduces the functional reliability of laser.
In addition to above-mentioned technology, there are also some other raising semiconductor laser brightness methods, including mixing are asymmetric outer
Prolong structure, conical laser technology etc..Although the above method can improve beam quality and laser brightness to a certain extent, this
The all different degrees of defect for having implementation complexity at high cost of a little methods.
Summary of the invention
The purpose of the present invention aiming at deficiency of the prior art, and provides a kind of half with anti-ducting layer
The technical solution of conductor laser and its manufacturing method, the program can be more preferable than present mode control technology earthquake area two sides
Inhibition higher order mode improve the brightness of semiconductor laser so as to improve beam quality.
This programme is achieved by the following technical measures:
A kind of semiconductor laser with anti-ducting layer, include substrate, epitaxial layer, the opposite ducting layer in side, front cavity surface and after
Cavity surface；Epitaxial layer is arranged on the top surface of a substrate；Front cavity surface is arranged on the one side of substrate；The rear facet is arranged in front cavity surface
In the side of substrate of opposite side；The bar shaped Congestion Area of protrusion is provided on epitaxial layer；In the two sides of bar shaped Congestion Area, at least side
It is provided with anti-ducting layer；Anti- ducting layer is arranged on epitaxial layer.
As the preferred of this programme: epitaxial layer includes the lower limit layer, lower waveguide layer, quantum successively arranged from bottom to up
Well layer, upper ducting layer, upper limiting layer, upper metalization layer；The upper ducting layer, upper limiting layer, upper metalization layer group are in strip shake
Swing area.
As the preferred of this programme: anti-ducting layer is arranged on upper ducting layer, and is located at the two sides of bar shaped Congestion Area.
As the preferred of this programme: being provided with insulating film layer on anti-ducting layer.
As the preferred of this programme: being provided with p side electrode on upper metalization layer top surface.
As the preferred of this programme: being provided with the face N electrode on substrate floor.
A kind of manufacturing method of the semiconductor laser with anti-ducting layer, includes following steps:
A, successively epitaxial semiconductor laser structure on substrate, includes: lower limit layer, lower waveguide layer, amount from bottom to up
Sub- well layer, upper ducting layer, upper limiting layer, upper metalization layer；
B, first time photoetching is carried out, is made bar shaped Congestion Area (8), the method for production is dry etching or wet etching, and etching is deep
Within the scope of upper ducting layer and upper limiting layer, the above ducting layer and upper limiting layer junction are nearby preferred degree, and maximum etching is deep
Degree control is no more than above quantum well layer；
C, second of photoetching is carried out, makes anti-ducting layer in bar shaped Congestion Area two sides；
D, SiO is made on anti-ducting layer2Or Si3N4Insulating film layer, production method are plasma chemical vapor deposition；
E, third time photoetching is carried out, SiO is etched2Or Si3N4Insulating layer of thin-film forms electrode injection window on bar shaped Congestion Area；
F, the face P electrode is made in upper metalization layer top surface, production method is electron beam evaporation deposition or magnetron sputtering plating；
G, substrate floor is thinned, polishing, then makes the face N electrode in substrate floor；
H, it is cleaved into laser, structure is single tube or bar item；
I, front cavity surface plates anti-reflection film, to optical maser wavelength reflectance value in 1%-10%；Rear facet plates high-reflecting film, reflects optical maser wavelength
Rate value is in 90%-99.9%；
J, laser is welded to heat sink, pressure welding contact conductor completes the production.
As the preferred of this programme: in step c, the material of anti-ducting layer be germanium metal (Ge, refractive index n ≈ 5) or other
Refractive index is greater than 3 high-index material.
As the preferred of this programme: in step c, the production method of anti-ducting layer is using sputtering or the method for deposition.
The beneficial effect of this programme can according to the description of the above program, due in the method in semiconductor laser
Anti- ducting layer structure is introduced in device, can effectively inhibit high-order mode, protects bar shaped Congestion Area still under biggish operating current
Less low step mode is held, realizes the high brightness laser output of laser.Therefore the efficiency and power for improving laser, are also protected
High light beam quality is held, to reach the good result of high brightness laser output.And the anti-ducting layer structure is to pass through evaporation
Or the method production of sputtering, cost and difficulty of processing are lower.
It can be seen that compared with prior art, the present invention having substantive features and progress, the beneficial effect implemented
It is obvious.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention.
Fig. 2 is the three dimensional structure diagram of Fig. 1.
In figure, 1 is substrate, and 2 be lower limit layer, and 3 be lower waveguide layer, and 4 be quantum well layer, and 5 be upper ducting layer, and 6 be the upper limit
Preparative layer, 7 be upper metalization layer, and 8 be bar shaped Congestion Area, and 9 be anti-ducting layer, and 10 be insulating film layer, and 11 be p side electrode, and 12 be the face N
Electrode, 13 be front cavity surface, and 14 be rear facet.
Specific embodiment
All features disclosed in this specification or disclosed all methods or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
Any feature disclosed in this specification (including any accessory claim, abstract and attached drawing), except non-specifically chatting
It states, can be replaced by other alternative features that are equivalent or have similar purpose.That is, unless specifically stated, each feature is only
It is an example in a series of equivalent or similar characteristics.
The structure of this programme is as shown in Figure 1:
This programme includes substrate, epitaxial layer, the opposite ducting layer in side, front cavity surface and rear facet；Epitaxial layer is arranged in substrate surface
On；Front cavity surface is arranged on the one side of substrate；The rear facet is arranged in the side of substrate of front cavity surface opposite side；On epitaxial layer
It is provided with the bar shaped Congestion Area of protrusion；In the two sides of bar shaped Congestion Area, at least side is provided with anti-ducting layer；Anti- ducting layer is set
It sets on epitaxial layer.Epitaxial layer includes the lower limit layer successively arranged from bottom to up, lower waveguide layer, quantum well layer, upper waveguide
Layer, upper limiting layer, upper metalization layer；The upper ducting layer, upper limiting layer, upper metalization layer group are in strip Congestion Area.Anti- waveguide
Layer is arranged on upper ducting layer, and is located at the two sides of bar shaped Congestion Area.Insulating film layer is provided on anti-ducting layer.Upper metalization layer
P side electrode is provided on top surface.The face N electrode is provided on substrate floor.
Embodiment: the embodiment of the present invention is as shown in Figure 1 and Figure 2, and by taking wide semiconductor laser as an example, preparation has anti-wave
The method of the semiconductor laser of conducting shell structure the following steps are included:
1, the successively epitaxial semiconductor laser structure on substrate (1), comprising: lower limit layer (2), lower waveguide layer (3), amount
Sub- well layer (4), upper ducting layer (5), upper limiting layer (6), upper metalization layer (7).
2, first time photoetching is carried out on substrate, is made bar shaped Congestion Area (8), and the method for production is dry etching or wet process
Etching.For etching depth in upper ducting layer (5) and upper limiting layer (6) range, the above ducting layer and upper limiting layer junction are attached
It is closely preferred, maximum etching depth control is no more than above quantum well layer (4).
3, second of photoetching is carried out, is made anti-ducting layer (9), production method is sputtering or deposition, anti-waveguide layer material are
Germanium metal (Ge, refractive index n ≈ 5), position are bar shaped Congestion Area two sides, and material thickness is 10 nm-300 nm.
4, SiO is made2(or Si3N4) insulating film layer (10), production method is plasma chemical vapor deposition.
5, third time photoetching is carried out, SiO is etched2(or Si3N4) insulating layer of thin-film, electrode note is formed on bar shaped Congestion Area
Enter window.
6, the face P electrode (11) are made, electrode material Ti/Pt/Au, production method includes but is not limited to electron beam evaporation
Plated film or magnetron sputtering plating.
7, the face substrate N is thinned, polishes.
8, the face N electrode (12) are made, electrode material Ni/AuGe/Au.
9, it is cleaved into laser, structure includes but is not limited to single tube, bar item；
10, front cavity surface plating anti-reflection film (13), to optical maser wavelength reflectance value 1% ~ 10%, rear facet plates high-reflecting film (14), to sharp
Optical wavelength reflectance value is 90% ~ 99.9%.
11, laser is welded to heat sink, pressure welding contact conductor.
The invention is not limited to specific embodiments above-mentioned.The present invention, which expands to, any in the present specification to be disclosed
New feature or any new combination, and disclose any new method or process the step of or any new combination.
Claims (9)
1. a kind of semiconductor laser with anti-ducting layer, it is characterized in that: include substrate, epitaxial layer, the opposite ducting layer in side,
Front cavity surface and rear facet；The epitaxial layer setting is on the top surface of a substrate；The front cavity surface is arranged on the one side of substrate；It is described
Rear facet is arranged in the side of substrate of front cavity surface opposite side；The bar shaped Congestion Area of protrusion is provided on the epitaxial layer；The item
In the two sides of shape Congestion Area, at least side is provided with anti-ducting layer；The anti-ducting layer is arranged on epitaxial layer.
2. a kind of semiconductor laser with anti-ducting layer according to claim 1, it is characterized in that: the epitaxial layer packet
Include the lower limit layer successively arranged from bottom to up, lower waveguide layer, quantum well layer, upper ducting layer, upper limiting layer, upper metallization
Layer；The upper ducting layer, upper limiting layer, upper metalization layer group are in strip Congestion Area.
3. a kind of semiconductor laser with anti-ducting layer according to claim 1 or 2, it is characterized in that: the anti-wave
Conducting shell is arranged on upper ducting layer, and is located at the two sides of bar shaped Congestion Area.
4. a kind of semiconductor laser with anti-ducting layer according to claim 1, it is characterized in that: the anti-ducting layer
On be provided with insulating film layer.
5. a kind of semiconductor laser with anti-ducting layer according to claim 2, it is characterized in that: the upper metallization
Layer is provided with p side electrode on top surface.
6. a kind of semiconductor laser with anti-ducting layer according to claim 1, it is characterized in that: the substrate floor
On be provided with the face N electrode.
7. a kind of manufacturing method of the semiconductor laser with anti-ducting layer, it is characterized in that: including following steps:
A, successively epitaxial semiconductor laser structure on substrate, includes: lower limit layer, lower waveguide layer, amount from bottom to up
Sub- well layer, upper ducting layer, upper limiting layer, upper metalization layer；
B, first time photoetching is carried out, is made bar shaped Congestion Area (8), the method for production is dry etching or wet etching, and etching is deep
Within the scope of upper ducting layer and upper limiting layer, the above ducting layer and upper limiting layer junction are nearby preferred degree, and maximum etching is deep
Degree control is no more than above quantum well layer；
C, second of photoetching is carried out, makes anti-ducting layer in bar shaped Congestion Area two sides；
D, SiO is made on anti-ducting layer2Or Si3N4Insulating film layer, production method are plasma chemical vapor deposition；
E, third time photoetching is carried out, SiO is etched2Or Si3N4Insulating layer of thin-film forms electrode injection window on bar shaped Congestion Area；
F, the face P electrode is made in upper metalization layer top surface, production method is electron beam evaporation deposition or magnetron sputtering plating；
G, substrate floor is thinned, polishing, then makes the face N electrode in substrate floor；
H, it is cleaved into laser, structure is single tube or bar item；
I, front cavity surface plates anti-reflection film, to optical maser wavelength reflectance value in 1%-10%；Rear facet plates high-reflecting film, reflects optical maser wavelength
Rate value is in 90%-99.9%；
J, laser is welded to heat sink, pressure welding contact conductor completes the production.
8. according to the method described in claim 7, it is characterized in that: the material of anti-ducting layer is germanium metal (Ge, refraction in step c
Rate n ≈ 5) or high-index material of other refractive index greater than 3.
9. according to the method described in claim 7, it is characterized in that: the production method of anti-ducting layer using sputtering or is sunk in step c
Long-pending method.
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| CN201811277048.1A CN109193344A (en) | 2018-10-30 | 2018-10-30 | A kind of semiconductor laser and its manufacturing method with anti-ducting layer structure |
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| CN201811277048.1A CN109193344A (en) | 2018-10-30 | 2018-10-30 | A kind of semiconductor laser and its manufacturing method with anti-ducting layer structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110233426A (en) * | 2019-06-25 | 2019-09-13 | 中国科学院半导体研究所 | A kind of leakage waves coupling locking phase array semi-conductor lasers |
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| CN106911078A (en) * | 2017-02-17 | 2017-06-30 | 武汉光安伦光电技术有限公司 | Small divergence angle ridge lasers and preparation method thereof |
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2018
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| US5812576A (en) * | 1996-08-26 | 1998-09-22 | Xerox Corporation | Loss-guided semiconductor lasers |
| CN101764353A (en) * | 2010-01-27 | 2010-06-30 | 中国科学院半导体研究所 | Micro-nano semiconductor edge emission fp laser and manufacturing method thereof |
| CN102142657A (en) * | 2011-03-02 | 2011-08-03 | 中国科学院半导体研究所 | Manufacturing method of photonic crystal waveguide for improving lateral far field of stripe laser |
| CN104332825A (en) * | 2014-11-20 | 2015-02-04 | 长春理工大学 | Asymmetric inverse waveguide large optical cavity semiconductor laser structure |
| CN106911078A (en) * | 2017-02-17 | 2017-06-30 | 武汉光安伦光电技术有限公司 | Small divergence angle ridge lasers and preparation method thereof |
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| Title |
|---|
| HANS WENZEL等: "Suppression of Higher-Order Lateral Modes in Broad-Area Diode Lasers by Resonant Anti-Guiding", 《IEEE JOURNAL OF QUANTUM ELECTRONICS》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110233426A (en) * | 2019-06-25 | 2019-09-13 | 中国科学院半导体研究所 | A kind of leakage waves coupling locking phase array semi-conductor lasers |
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