CN102593717A - Semiconductor laser with ultrathin insulating layer and preparation method for semiconductor laser - Google Patents
Semiconductor laser with ultrathin insulating layer and preparation method for semiconductor laser Download PDFInfo
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- CN102593717A CN102593717A CN2012100756289A CN201210075628A CN102593717A CN 102593717 A CN102593717 A CN 102593717A CN 2012100756289 A CN2012100756289 A CN 2012100756289A CN 201210075628 A CN201210075628 A CN 201210075628A CN 102593717 A CN102593717 A CN 102593717A
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Abstract
The invention relates to a semiconductor laser, in particular to a semiconductor laser with an ultrathin insulating layer and a preparation method for the semiconductor laser. The semiconductor laser comprises a lower metallization layer, a lower confinement layer, a lower waveguide layer, a lower transition layer, a quantum well layer, an upper transition layer, an upper waveguide layer, an upper confinement layer, an upper metallization layer, an upper metal electrode layer, a lower metal electrode layer, an anti-reflection film plated on a front cavity surface and a high-reflection thin film plated on a rear cavity surface on a substrate. At least two grooves are reserved on the surface of the upper metallization layer between the upper metallization layer and the upper metal electrode layer. Current carrier confinement insulating bumps are arranged between every two adjacent grooves. The preparation method comprises the following steps of: preparing the grooves on the upper metallization layer by utilizing a photoetching technology and an etching technology, and depositing current carrier confinement layers on the metallization layers; and reducing the current carrier confinement layers between the grooves to form the current carrier confinement insulting bumps. The insulating layer is thin, so that the semiconductor laser can be rapidly radiated, the power of the semiconductor laser can be improved, and the service life of the semiconductor laser can be prolonged.
Description
Technical field
The invention belongs to field of photoelectric technology, be specifically related to a kind of semiconductor laser, particularly
Ultra-thin insulating barrier semiconductor laser and preparation method thereof.
Background technology
Semiconductor laser (DL) is an important directions of laser development in recent years; Because its volume is little; Characteristics such as power is high, and the life-span is long, the laser weapon in medical treatment, industrial or agricultural processing and military field, range finding, guidance, spy aspect such as dive has extremely wide application prospect.In order to prevent to produce the lateral light concussion, generally all can take certain light quarantine measures in the present semiconductor laser, only on the direction that the designer hopes, produce vibration to guarantee laser.The method that light is isolated has physical isolation method and carrier confinement method.Wherein the carrier confinement method is exactly near the electrode of semiconductor laser, to make some insulating barriers, stops the injection of charge carrier, for general this insulating barrier of effect that guarantees carrier confinement all need prepare more than the 100nm.But because insulating layer material mostly is a metal oxide materials, its thermal conductivity is lower, and therefore blocked up insulating barrier can make the heat radiation difficulty of semiconductor laser, improves the working temperature of semiconductor laser, the power and the life-span of reducing semiconductor laser.
Summary of the invention
The objective of the invention is to be to overcome the deficiency of above-mentioned prior art, a kind of radiating efficiency height that has is provided, working temperature is low, ultra-thin insulating barrier semiconductor laser that power output and life-span are higher and preparation method thereof.
Solution of the present invention is: a kind of ultra-thin insulating barrier semiconductor laser comprises the following metal layer on the substrate, lower limit layer; Lower waveguide layer, following transition zone, quantum well layer; Last transition zone, last ducting layer, upper limiting layer; Last metal layer, metal electrode layer up and down, anti-reflection film that preceding rear facet plates respectively and high reflective film; Be characterized in that the metal layer surface has at least two grooves between last metal layer and the last metal electrode layer, it is protruding to be provided with the carrier confinement insulation between two adjacent trenches.
Among the present invention, the effect of groove is to utilize physics to cut off the horizontal concussion that ducting layer limits light, but owing to the mechanical performance of groove structure for chip has than macrolesion; That can not make is too intensive; Need be used with the insulating barrier convexity, the protruding effect of insulating barrier is to stop that charge carrier injects this zone, plays the gain of light effect effect that weakens in the one's respective area; And then the restriction light field is at this zone acquisition energy, so played the horizontal concussion of restriction light.Carrier confinement effect and its insulation characterisitic of insulating barrier convexity are closely related; Insulation characterisitic is closely related with method for manufacturing thin film again; Adopt insulating barrier of the present invention can obtain the higher insulating barrier of compactness, therefore can use thin insulating barrier to play the effect of existing insulating barrier.
Spacing in the solution of the present invention between the carrier confinement insulation convexity equates.
Its effect is the charge carrier injection of restriction to the one's respective area, thereby the gain of light characteristic in the restriction one's respective area stops light to shake horizontal the generation.The carrier confinement height of projection is 1-50nm.
The preparation method of above-mentioned ultra-thin insulating barrier semiconductor laser is characterized in may further comprise the steps:
A, at metal layer under the epitaxial growth successively on the substrate, lower limit layer, lower waveguide layer, following transition zone, quantum well layer, last transition zone, last ducting layer, upper limiting layer, last metal layer;
B, employing photoetching technique and lithographic technique prepare groove at last metal layer, on metal layer, deposit carrier confining layer then;
C, the carrier confining layer between the groove is reduced, it is protruding to form mutual spaced carrier confinement insulation, and the carrier confining layer at interval is reduced:
D, preparation metal electrode layer carry out cleavage, front facet plating anti-reflection film, and rear facet plates high reflective film, and chips welding arrives heat sink, the pressure welding contact conductor.
Carrier confining layer is reduced the method for utilizing chemical wet etching or peeling off in the preparation method's of the present invention solution.
Deposition carrier confinement insulating barrier method adopts atomic layer deposition method or auxiliary atomic layer deposition method of plasma or metal autoxidation method in the preparation method's of the present invention solution.Metal autoxidation method is at first to deposit the layer of metal material on metal layer (10) surface, and then be placed in the air or oxygen in a period of time, oxygen forms metal oxide insulating barrier, i.e. carrier confining layer naturally to the oxidation meeting of metal.
The carrier confinement layer material adopts yittrium oxide or aluminium oxide or hafnium oxide or silica or zirconia in the preparation method's of the present invention solution.
Advantage of the present invention: the present invention has at least two grooves through metal layer surface between last metal layer and the last metal electrode layer, and it is protruding to be provided with the carrier confinement insulation between two adjacent trenches.Its insulating barrier of semiconductor laser is very fine and close simultaneously; Insulation property are better than traditional preparation process method; So the thickness of insulating barrier can be reduced to 1-50nm, thickness of insulating layer reduces can make the heat radiation of semiconductor laser quicker, helps the raising in semiconductor laser power and life-span.
Description of drawings
Fig. 1 strengthens the semiconductor laser structure sketch map of heat radiation for the present invention;
Fig. 2 is the protruding partial view of carrier confinement insulation between two grooves.
Embodiment
Embodiment: the embodiment of the invention such as Fig. 1, shown in Figure 2: with wide semiconductor laser is example, and the method for preparing ultra-thin insulating barrier semiconductor laser may further comprise the steps:
1, epitaxial growth semiconductor laser structure successively on substrate 1 comprises: following metal layer 2, lower limit layer 3, lower waveguide layer 4, following transition zone 5, quantum well layer 6, last transition zone 7, last ducting layer 8, upper limiting layer 9, last metal layer 10.
2, adopt photoetching technique and lithographic technique at 12 grooves 17 of last metal layer 10 preparations.
3, utilize atomic layer deposition method to prepare carrier confinement insulating barrier 14, the carrier confinement layer material adopts yittrium oxide, and carrier confinement insulating barrier 14 highly is 10nm.
4, the carrier confining layer between the groove 17 14 is reduced; Form mutual spaced carrier confinement insulation protruding 14; Spacing between the carrier confinement insulation protruding 14 equates; The insulate carrier confining layer at protruding 14 intervals of carrier confinement is reduced, and cutting method adopts the chemical wet etching method.
5, adopt lithography stripping to prepare metal electrode layer 11,12.
6, at front facet deposition anti-reflection film, at rear facet deposition highly reflecting films,
7, chips welding is to heat sink, the pressure welding contact conductor.
Claims (8)
1. a ultra-thin insulating barrier semiconductor laser comprises the following metal layer (2) on the substrate (1), lower limit layer (3); Lower waveguide layer (4), following transition zone (5), quantum well layer (6); Last transition zone (7), last ducting layer (8), upper limiting layer (9); Last metal layer (10), metal electrode layer (11,12) up and down, anti-reflection film that preceding rear facet plates respectively and high reflective film; It is characterized in that last metal layer (10) surface between last metal layer (10) and last metal electrode layer (12) has at least two grooves (17), be provided with carrier confinement insulation protruding (14) between two adjacent trenches (17).
2. ultra-thin insulating barrier semiconductor laser according to claim 1 is characterized in that the spacing between the carrier confinement insulation protruding (14) equates.
3. ultra-thin insulating barrier semiconductor laser according to claim 1 is characterized in that carrier confinement protruding (14) highly is 1-50nm.
4. the preparation method of a ultra-thin insulating barrier semiconductor laser as claimed in claim 1 is characterized in that may further comprise the steps:
A, at metal layer (2) under the epitaxial growth successively on the substrate (1), lower limit layer (3), lower waveguide layer (4); Following transition zone (5), quantum well layer (6), last transition zone (7); Last ducting layer (8), upper limiting layer (9), last metal layer (10);
B, employing photoetching technique and lithographic technique are gone up the deposition carrier confining layer at metal layer (10) then at last metal layer (10) preparation groove (17);
C, the carrier confining layer between the groove (17) is reduced, form mutual spaced carrier confinement insulation protruding (14), the carrier confining layer at interval is reduced:
D, preparation metal electrode layer (11,12) carry out cleavage, front facet plating anti-reflection film, and rear facet plates high reflective film, and chips welding arrives heat sink, the pressure welding contact conductor.
5. the preparation method of ultra-thin insulating barrier semiconductor laser according to claim 4 is characterized in that carrier confining layer reduces the method for utilizing chemical wet etching or peeling off.
6. the preparation method of ultra-thin insulating barrier semiconductor laser according to claim 4 is characterized in that depositing carrier confinement insulating barrier method and adopts atomic layer deposition method or auxiliary atomic layer deposition method of plasma or metal autoxidation method.
7. the preparation method of ultra-thin insulating barrier semiconductor laser according to claim 4 is characterized in that the carrier confinement layer material adopts yittrium oxide or aluminium oxide or hafnium oxide or silica or zirconia.
8. the preparation method of ultra-thin insulating barrier semiconductor laser according to claim 6; It is characterized in that metal autoxidation method is at first to deposit the layer of metal material on metal layer (10) surface; And then be placed in the air or oxygen in a period of time; Oxygen forms metal oxide insulating barrier, i.e. carrier confining layer naturally to the oxidation meeting of metal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210075628.9A CN102593717B (en) | 2012-03-21 | 2012-03-21 | Semiconductor laser with ultrathin insulating layer and preparation method for semiconductor laser |
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| CN201210075628.9A CN102593717B (en) | 2012-03-21 | 2012-03-21 | Semiconductor laser with ultrathin insulating layer and preparation method for semiconductor laser |
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| CN102593717A true CN102593717A (en) | 2012-07-18 |
| CN102593717B CN102593717B (en) | 2014-12-03 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356715A (en) * | 2015-07-16 | 2017-01-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Semiconductor laser and preparation method thereof |
| CN106451075A (en) * | 2016-10-31 | 2017-02-22 | 苏州长光华芯光电技术有限公司 | Semiconductor laser chip and preparation method thereof |
| CN106602404A (en) * | 2016-12-30 | 2017-04-26 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser and manufacturing method thereof |
| WO2019085452A1 (en) * | 2017-10-30 | 2019-05-09 | 深圳瑞波光电子有限公司 | Semiconductor laser bar, single semiconductor laser tube, and preparation method therefor |
| CN112636164A (en) * | 2020-12-18 | 2021-04-09 | 勒威半导体技术(嘉兴)有限公司 | Ultrathin insulating layer semiconductor laser and preparation method thereof |
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| JP3510305B2 (en) * | 1994-02-22 | 2004-03-29 | 三菱電機株式会社 | Semiconductor laser manufacturing method and semiconductor laser |
| US20050088728A1 (en) * | 2003-10-28 | 2005-04-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor optical amplifier and method for manufacturing the same, and optical communication device |
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- 2012-03-21 CN CN201210075628.9A patent/CN102593717B/en not_active Expired - Fee Related
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356715A (en) * | 2015-07-16 | 2017-01-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Semiconductor laser and preparation method thereof |
| CN106451075A (en) * | 2016-10-31 | 2017-02-22 | 苏州长光华芯光电技术有限公司 | Semiconductor laser chip and preparation method thereof |
| CN106602404A (en) * | 2016-12-30 | 2017-04-26 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser and manufacturing method thereof |
| WO2019085452A1 (en) * | 2017-10-30 | 2019-05-09 | 深圳瑞波光电子有限公司 | Semiconductor laser bar, single semiconductor laser tube, and preparation method therefor |
| CN112636164A (en) * | 2020-12-18 | 2021-04-09 | 勒威半导体技术(嘉兴)有限公司 | Ultrathin insulating layer semiconductor laser and preparation method thereof |
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