CN101188345A - Semiconductor laser array and its making method - Google Patents
Semiconductor laser array and its making method Download PDFInfo
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- CN101188345A CN101188345A CNA2007101905449A CN200710190544A CN101188345A CN 101188345 A CN101188345 A CN 101188345A CN A2007101905449 A CNA2007101905449 A CN A2007101905449A CN 200710190544 A CN200710190544 A CN 200710190544A CN 101188345 A CN101188345 A CN 101188345A
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Abstract
The invention discloses a semiconductor laser array and the manufacture method thereof. The semiconductor laser array comprises a plurality of laser units which are arranged on the same substrate. The laser units are all provided with an epitaxial layer, a positive electrode and a negative electrode. The epitaxial layer comprises a laser activating part, and the laser activating parts of any two laser units are electrically isolated mutually, wherein, at least two laser units of a plurality of laser units are connected with each other in series, the laser units which are connected in series are bonded to a carrier with an insulating surface, and any two laser units in series are positioned on the same plane. The semiconductor laser array can reduce the working current and can obviously reduce the size and the cost on a power and current transmission line.
Description
Technical field
The present invention relates to semiconductor laser array, particularly is semiconductor laser array of working method and preparation method thereof with the series connection.
Background technology
Semiconductor laser array is a kind of device that converts electrical energy into luminous energy, conventional semiconductor laser array is grown on the Semiconductor substrate of conduction, Fig. 1 is the typical main cutaway view after the conventional semiconductor laser array encapsulation, referring to Fig. 1, laser array chips with 3 laser elements, 101 expression conductive substrates, the common electrode layer (negative electrode) of 102 these 3 laser elements of expression, the epitaxial loayer of 103 these 3 laser elements of expression, epitaxial loayer is a kind of multi-lager semiconductor material, it comprises that at least the epitaxial loayer of semiconductor laser comprises p type conductive layer 133 at least, n type conductive layer 113 and the luminescent layer between two kinds of conductive layers 123 (being that laser activates part), 1051,1052,1053 represent the opposite electrode (positive electrode) of these 3 laser elements respectively, 106 expression soldering-tin layers, 109 expressions are heat sink, and semiconductor laser array is welded on heat sink 109 by soldering-tin layer 106.Common electrode layer 102 links to each other with the negative pole of power supply, and positive electrode 1051,1052,1053 and positive source link, and these 3 laser elements are shared the negative electrode and the anode of same power supply, and working method is in parallel.
Along with development of technology, the Output optical power of semiconductor laser array is more and more higher, and needed operating current is also increasing.Present product has been exported 100 watts of continuous operation luminous powers, and operating current is up to 110 dc amps.The high workload electric current produces a large amount of Joule heats, Joule heat be proportional to electric current square and the resistance value of transmission system.In order to solve the Joule heat problem, adopt the mode that reduces resistance usually, so power supply and current delivery linear content need be very big, cause power supply unit heavy and expensive.
The manufacturing process of semiconductor laser array mainly comprises epitaxial growth, chip manufacturing, Chip Packaging, device light shape this four steps of reforming.Epitaxial growth is meant the multi-lager semiconductor material at the surface of a substrate (as arsenide gallium monocrystal) control ground growth ad hoc structure, promptly at the substrate growing epitaxial layers.The product that obtains after the epitaxial growth is called epitaxial wafer, and itself can't be luminous, has only by chip manufacturing, and after the energising, luminescent layer could be luminous.Chip manufacturing mainly is to make the metal electrode that links to each other with n type conductive layer with p type conductive layer on epitaxial wafer, and the technical process of making the laser reflection cavity, simultaneously also epitaxial wafer is decomposed into a plurality of semiconductor laser chips that can work alone, semiconductor laser chip is the product behind the chip manufacturing.Each semiconductor laser chip comprises one or several discontinuous light radiation districts, is called laser element.For example be grown in the semiconductor laser chip on the conductive semiconductor substrate, the electrode definition of extension one side the light radiation district.That is to say, each discontinuous electrode definition of extension one side a laser element.The chip that contains a plurality of laser elements is laser array again.Chip Packaging be with semiconductor laser chip be bonded to one heat sink on, the metal electrode that p type conductive layer is linked to each other with n type conductive layer is connected to the process of a connector that can link to each other with external power supply easily simultaneously.
Summary of the invention
At above-mentioned problem, the purpose of this invention is to provide a kind of semiconductor laser array and manufacture method thereof that can reduce operating current.
The invention provides a kind of semiconductor laser array, it comprises a plurality of laser elements that are grown on the same substrate, described laser element all has epitaxial loayer, positive electrode and negative electrode, described epitaxial loayer includes laser and activates part, it is electrically isolated from one that the laser of any two laser elements activates part, have at least two to be connected in wherein said a plurality of laser element with series system, the laser element of series connection is bonded on the carrier of surface insulation by electric conductor, and any two laser elements that connect that are in series are on the same geometrical plane.
Described semiconductor laser array is by a described carrier and a heat sink bonding mutually.
The top layer of described carrier is made by insulating material, and described insulating material is aluminium nitride or beryllium oxide.
Described substrate is made by electric conducting material, on the positive electrode of the laser element of series connection and the not ipsilateral that negative electrode is positioned at this laser element, and the electrode of laser element of series connection and the electrode of other laser elements are separated, and the positive electrode of the laser element of series connection or negative electrode and described electric conductor be electric connection mutually.
Described substrate is made by insulating material, the epitaxial loayer that the laser element of series connection has two different conduction-types, one of them epitaxial loayer is provided with positive electrode, the another one epitaxial loayer is provided with negative electrode, and an opposite electrode on electrode on the laser element in any two laser elements that are in series and another laser element and described electric conductor be electric connection mutually.
The present invention also provides a kind of method of making semiconductor laser array, it comprises epitaxial growth, chip manufacturing, Chip Packaging and four steps of device light shape reformation, obtain being grown in a plurality of semiconductor laser elements on the same conductive substrates by epitaxial growth steps, and the positive electrode of described laser element and negative electrode are positioned on the not ipsilateral of this laser element, it is electrically isolated from one that the laser of any two laser elements activates part, it is characterized in that: described chip manufacturing is meant the positive electrode of a plurality of semiconductor laser elements on the same conductive substrates of being grown in of gained or negative electrode is welded on the same electric conductor, described electric conductor is arranged on the carrier of a surface insulation, makes the electrode of electrode on these two laser elements and other laser elements be separated to realize the electricity between these two laser elements and other laser elements to be isolated thereby the semiconductor laser element of more any two needs being connected carries out cutting operation.
Described cutting operation adopts is one or more combination in machine cuts, laser cutting, chemical corrosion, the dry etching method.
The present invention also provides the method for another kind of manufacturing semiconductor laser array, it comprises epitaxial growth, chip manufacturing, Chip Packaging and four steps of device light shape reformation, obtain being grown in a plurality of semiconductor laser elements on the same dielectric substrate by epitaxial growth steps, and described laser element has two epitaxial loayers that conduction type is different: first epitaxial loayer and second epitaxial loayer, described second epitaxial loayer covers the outer surface of first epitaxial loayer, it is electrically isolated from one that the laser of each laser element activates part, it is characterized in that: described second epitaxial loayer is carried out regional chemistry corrosion expose portion first epitaxial loayer thereby described chip manufacturing is meant the method that at first adopts photoetching, thereby the semiconductor laser element that any two needs are connected carries out cutting operation and makes the epitaxial loayer of epitaxial loayer on these two laser elements and other laser elements be separated to realize the electricity between these two laser elements and other laser elements to be isolated again, use the method for evaporation or sputter on one of them epitaxial loayer on the laser element that described needs are connected, to make positive electrode then, make negative electrode on another epitaxial loayer, and an electrode on the laser element in the laser element that any two needs are in series and an opposite electrode on another laser element together be welded on first electric conductor, and described first electric conductor is arranged on the carrier of a surface insulation.
Described cutting operation adopts is one or more combination in machine cuts, laser cutting, chemical corrosion, the dry etching method.
Make after the positive electrode and negative electrode on the laser element that needs series connection, and an electrode on the laser element in the laser element that any two needs are in series and an opposite electrode on another laser element together are bonded on second electric conductor, described second electric conductor and electrode be electric connection mutually, second electric conductor is welded on described first electric conductor again.
Main design of the present invention is the mode of operation that changes semiconductor laser array in the prior art, with the parallel operation mode switch is the tandem working pattern, so can significantly reduce the operating current of semiconductor laser array, solve the great burden that the high workload electric current causes power supply unit.For example, semiconductor laser array is made up of n laser element, and n laser element series connection linked, and operating current will be the 1/n of original paralleling model, and electric power system is being kept under the same resistance situation, and Joule heat has only original 1/n
2For the semiconductor laser array of typical 100 watts of continuous operation luminous powers, 20 laser elements are arranged approximately, parallel operation needs 110 dc amps, and series connection links each laser element, and operating current has only 5.5 amperes; Under the same heat-sinking capability of maintenance, electric power system resistance can improve 400 times, still keeps identical heat generation amount.In the low current condition of work that is lower than 10 amperes, power supply and current delivery line can use the design standard of present family expenses electrical transmission system, do not need special concern.
Adopt the advantage of technique scheme as follows: can reduce operating current, and significantly lower the yardstick and the cost of power supply and current delivery line; The laser element of each tandem working of semiconductor laser array, because operating current is identical, Output optical power is close, series connection laser array optical field distribution will be more even.
Description of drawings
Fig. 1 is the typical main cutaway view of semiconductor laser array in the prior art;
Fig. 2 is the main cutaway view of first kind of execution mode of semiconductor laser array of the present invention;
Fig. 3 is the vertical view after semiconductor laser array shown in Figure 2 carries out Chip Packaging;
Fig. 4 is the main cutaway view of second kind of execution mode of semiconductor laser array of the present invention;
Fig. 5 is the main cutaway view of the third execution mode of semiconductor laser array of the present invention;
Wherein: 101: conductive substrates; 102: common electrode layer (negative electrode); 1051,1052,1053: opposite electrode (positive electrode); 103, epitaxial loayer; 113:n type conductive layer; 123: luminescent layer (laser activation part); 133:P type conductive layer; 106, soldering-tin layer; 109: heat sink;
201: conductive substrates; 2021,2022,2023: negative electrode; 2031,2032,2033: epitaxial loayer; 204: isolation channel; 2051,2052,2053: positive electrode; 206: soldering-tin layer; 207: electric conductor (metallic gasket); 208: the carrier of surface insulation; 209: heat sink; 210: electric conductor (lead);
301: dielectric substrate; 3021,3022,3023: negative electrode; 304: isolation channel; 3051,3052,3053: positive electrode; 313: the first epitaxial loayers; 323: luminescent layer (laser activation part); 333: the second epitaxial loayers; 306: soldering-tin layer; 307: the first electric conductors; 310: the second electric conductors.
Embodiment
Further set forth the present invention below in conjunction with drawings and Examples.
Fig. 2 shows semiconductor laser array of the present invention, as can be seen from Figure 2, this semiconductor laser array has three independently laser elements (1,2,3), these 3 laser elements are grown on the same conductive substrates 201, in the same plane, and has negative electrode 2021 respectively, 2022,2023 and positive electrode 2051,2052,2053, wherein negative electrode 2021,2022,2023 are positioned at conductive substrates 201 1 sides, positive electrode 2051,2052,2053 are positioned at epitaxial loayer 2031,2032,2,033 one sides, the laser of these 3 laser elements activates part electricity isolation mutually, positive electrode 2051,2052,2053 weld by soldering-tin layer 206 mutually with electric conductor 207 separately, 207 is a metallic gasket among Fig. 2, metallic gasket 207 is bonded on the carrier 208 of a surface insulation, described carrier 208 top layers are to be made by insulating material, for example: aluminium nitride or beryllium oxide.These 3 laser elements are isolated by isolation channel 204, and isolation channel 204 is deep to the insulating barrier of described carrier 208, thereby makes the electrode of each laser element and the electrode of other laser elements be separated.
This semiconductor laser array is bonded on heat sink 209 by described carrier 208,3 independently semiconductor laser element be together in series by electric conductor 210,210 can be metal wire, as spun gold, also can be a conductive structure or outer lead circuit, electric conductor 210 be a lead among Fig. 2.Lead 210 passes through the negative electrode 2021 and the positive electrode 2052 of adjacent laser element metallic gasket 207 electric connections on carrier 208 surfaces, also with 2053 metallic gasket 207 electric connections by carrier 208 surfaces of negative electrode 2022 with adjacent laser element, successively, semiconductor laser element 1,2,3 is cascaded, and the device after the series connection is connected with the both positive and negative polarity of power supply by lead.As shown in Figure 2, each semiconductor laser units in series together, this laser array chips will have minimum operating current, and patent of the present invention also can be to connect with other one or more semiconductor laser elements after a plurality of semiconductor laser element parallel connections again.
The method of making semiconductor laser array shown in Figure 2 is as follows: this method mainly comprises epitaxial growth, chip manufacturing, Chip Packaging and four steps of device light shape reformation, obtain being grown in 3 semiconductor laser elements on the same conductive substrates 201 by epitaxial growth steps, these 3 semiconductor laser elements are in the same plane, common electrode layer (negative electrode) is positioned at conductive substrates 201 1 sides, positive electrode (discontinuous electrode layer) is positioned at epitaxial loayer one side, and the laser of these 3 laser elements activates part electricity isolation mutually.The chip manufacturing step mainly is that the positive electrode that is grown in 3 semiconductor laser elements on the conductive substrates 201 with gained is welded on the metallic gasket 207, metallic gasket 207 is arranged on the carrier 208, (length of metallic gasket 207 preferably is longer than each laser element length so that with the positive electrode 2051 of laser element, 2052,2053 direct into surperficial exposure position by 207, be used for thereafter the step laser element that is connected in series), make the electrode of electrode on this each laser element and other laser elements be separated to realize the electricity between this each laser element and other laser elements to be isolated thereby again these 3 semiconductor laser elements are carried out cutting operation.Cutting operation can adopt one or more the combination in machine cuts, laser cutting, chemical corrosion, the dry etching method.The metallic gasket 207 on carrier 208 surfaces is cut off, and forms isolation channel 204, and as shown in Figure 2, semiconductor laser element is separated by isolation channel 204, and isolation channel is deep to the insulation top layer of carrier 208.Usually in order to remove the damage that the separation process causes device, after the cutting, can carry out chemical corrosion to the laser array isolation channel and handle.Last Chip Packaging step is that prepared laser array chips is bonded on one heat sink 209, as shown in Figure 3, semiconductor laser element after each is separated, being together in series by lead 210 forms the semiconductor laser array of a series connection.
Fig. 4 is the semiconductor laser array master cutaway view of another embodiment of the invention.This semiconductor laser array has three independently laser elements (1,2,3), these 3 laser elements are grown on the same dielectric substrate 301, in the same plane, each laser element has the epitaxial loayer of 2 kinds of different conduction-types: first epitaxial loayer 313 and second epitaxial loayer 333, be provided with luminescent layer 323 between described first epitaxial loayer 313 and second epitaxial loayer 333, be respectively arranged with negative electrode 3021 on first epitaxial loayer 313 on these three laser elements, 3022,3023, be respectively arranged with positive electrode 3051 on second epitaxial loayer 333,3052,3053, positive and negative electrode is positioned at the same side, the laser of these 3 laser elements activates part electricity isolation mutually, because substrate insulate, these 3 laser elements are isolated by isolation channel 304 electricity that are deep in the substrate each other, thereby make the electrode of each laser element and the electrode of other laser elements be separated.As shown in Figure 3, an opposite electrode on the electrode of each laser element and the adjacent laser element welds together by the soldering-tin layer 306 and first electric conductor 307, first electric conductor 307 is generally metallic gasket, a plurality of discontinuous metallic gaskets 307 are arranged on the carrier 30 as one kind 8 of surface insulation, these three laser elements are together in series by metallic gasket 307, have formed a series connection laser array chips with 3 semiconductor laser elements.This array chip can be connected with external power source by the metallic gasket 307 at insulating carrier 308 two ends.
Fig. 5 is the main cutaway view of series connection semiconductor laser array of a kind of preferred implementation of Fig. 4, wherein the opposite electrode on the electrode of each laser element and the adjacent laser element and second electric conductor 310 are bonded together mutually, second electric conductor 310 welds with first electric conductor 307 mutually by scolding tin, and first electric conductor 307 is arranged on the carrier 30 as one kind 8 of surface insulation.
The method of making semiconductor laser array shown in Figure 4 is as follows: this method mainly comprises epitaxial growth, chip manufacturing, Chip Packaging and four steps of device light shape reformation, obtain being grown in 3 semiconductor laser elements on the same dielectric substrate 301 by epitaxial growth steps, these 3 semiconductor laser elements are in the same plane, each laser element has the epitaxial loayer of 2 kinds of different conduction-types: first epitaxial loayer 313 and second epitaxial loayer 333, described second epitaxial loayer 333 covers the outer surface of first epitaxial loayer 313, and between be provided with luminescent layer (laser activation part) 323, the laser of these 3 laser elements activates part electricity isolation mutually, be respectively arranged with negative electrode 3021 on first epitaxial loayer 313 on these three laser elements, 3022,3023, be respectively arranged with positive electrode 3051 on second epitaxial loayer 333,3052,3053, positive and negative electrode is positioned at the same side.The chip manufacturing step mainly be adopt earlier photoetching method with the subregion chemical corrosion of second epitaxial loayer 333 to first epitaxial loayer 313, expose part second epitaxial loayer 333, again these 3 laser elements are carried out cutting operation, chemical corrosion is carried out in the position that needs are isolated again, generation is deep to the isolation channel 304 in the dielectric substrate 301, isolates with the electricity of realizing semiconductor laser element.Then, with evaporation or sputtering method, on second epitaxial loayer 333 of each semiconductor laser element, make positive electrode 3051 respectively, 3052,3053, on first epitaxial loayer 313, make negative electrode 3021 respectively, 3022,3023 weld together the electrode and the opposite electrode on the adjacent laser element that are grown in each laser element in 3 semiconductor laser elements on the dielectric substrate 301 of gained again by the soldering-tin layer 306 and first electric conductor 307, first electric conductor 307 is generally metallic gasket, a plurality of discontinuous metallic gaskets 307 are arranged on the carrier 30 as one kind 8 of surface insulation, finish the unit chip of the chip of this technology for the electricity isolation.
Claims (10)
1. semiconductor laser array, it comprises a plurality of laser elements that are grown on the same substrate, described laser element all has epitaxial loayer, positive electrode and negative electrode, described epitaxial loayer includes laser and activates part, it is electrically isolated from one that the laser of any two laser elements activates part, it is characterized in that: have at least two to be connected in described a plurality of laser elements with series system, the laser element of series connection is bonded on the carrier of surface insulation by electric conductor, and any two laser elements that connect that are in series are on the same geometrical plane.
2. semiconductor laser array according to claim 1 is characterized in that: described semiconductor laser array is by a described carrier and a heat sink bonding mutually.
3. semiconductor laser array according to claim 1 is characterized in that: the top layer of described carrier is made by insulating material, and described insulating material is aluminium nitride or beryllium oxide.
4. semiconductor laser array according to claim 1, it is characterized in that: described substrate is made by electric conducting material, on the positive electrode of the laser element of series connection and the not ipsilateral that negative electrode is positioned at this laser element, and the electrode of laser element of series connection and the electrode of other laser elements are separated, and the positive electrode of the laser element of series connection or negative electrode and described electric conductor be electric connection mutually.
5. semiconductor laser array according to claim 1, it is characterized in that: described substrate is made by insulating material, the epitaxial loayer that the laser element of series connection has two different conduction-types, one of them epitaxial loayer is provided with positive electrode, the another one epitaxial loayer is provided with negative electrode, and an opposite electrode on electrode on the laser element in any two laser elements that are in series and another laser element and described electric conductor be electric connection mutually.
6. method of making semiconductor laser array, it comprises epitaxial growth, chip manufacturing, Chip Packaging and four steps of device light shape reformation, obtain being grown in a plurality of semiconductor laser elements on the same conductive substrates by epitaxial growth steps, and the positive electrode of described laser element and negative electrode are positioned on the not ipsilateral of this laser element, it is electrically isolated from one that the laser of any two laser elements activates part, it is characterized in that: described chip manufacturing is meant the positive electrode of a plurality of semiconductor laser elements on the same conductive substrates of being grown in of gained or negative electrode is welded on the same electric conductor, described electric conductor is arranged on the carrier of a surface insulation, makes the electrode of electrode on these two laser elements and other laser elements be separated to realize the electricity between these two laser elements and other laser elements to be isolated thereby the semiconductor laser element of more any two needs being connected carries out cutting operation.
7. the method for manufacturing semiconductor laser array according to claim 6 is characterized in that: described cutting operation adopts is one or more combination in machine cuts, laser cutting, chemical corrosion, the dry etching method.
8. method of making semiconductor laser array, it comprises epitaxial growth, chip manufacturing, Chip Packaging and four steps of device light shape reformation, obtain being grown in a plurality of semiconductor laser elements on the same dielectric substrate by epitaxial growth steps, and described laser element has two epitaxial loayers that conduction type is different: first epitaxial loayer and second epitaxial loayer, described second epitaxial loayer covers the outer surface of first epitaxial loayer, it is electrically isolated from one that the laser of each laser element activates part, it is characterized in that: described second epitaxial loayer is carried out regional chemistry corrosion expose portion first epitaxial loayer thereby described chip manufacturing is meant the method that at first adopts photoetching, thereby the semiconductor laser element that any two needs are connected carries out cutting operation and makes the epitaxial loayer of epitaxial loayer on these two laser elements and other laser elements be separated to realize the electricity between these two laser elements and other laser elements to be isolated again, use the method for evaporation or sputter on one of them epitaxial loayer on the laser element that described needs are connected, to make positive electrode then, make negative electrode on another epitaxial loayer, and an electrode on the laser element in the laser element that any two needs are in series and an opposite electrode on another laser element together be welded on first electric conductor, and described first electric conductor is arranged on the carrier of a surface insulation.
9. the method for manufacturing semiconductor laser array according to claim 8 is characterized in that: described cutting operation adopts is one or more combination in machine cuts, laser cutting, chemical corrosion, the dry etching method.
10. the method for manufacturing semiconductor laser array according to claim 8, it is characterized in that: make after the positive electrode and negative electrode on the laser element that needs series connection, and an electrode on the laser element in the laser element that any two needs are in series and an opposite electrode on another laser element together are bonded on second electric conductor, described second electric conductor and electrode be electric connection mutually, second electric conductor is welded on described first electric conductor again.
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| CN102222857A (en) * | 2010-04-14 | 2011-10-19 | 海特光电有限责任公司 | Narrow-pulse-width low-duty-cycle laser diode array structure |
| CN102237636A (en) * | 2010-04-26 | 2011-11-09 | 无锡亮源激光技术有限公司 | Multi-tube serial semiconductor laser module and manufacturing method thereof |
| CN102593717A (en) * | 2012-03-21 | 2012-07-18 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser with ultrathin insulating layer and preparation method for semiconductor laser |
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| CN102222857A (en) * | 2010-04-14 | 2011-10-19 | 海特光电有限责任公司 | Narrow-pulse-width low-duty-cycle laser diode array structure |
| CN102222857B (en) * | 2010-04-14 | 2013-05-22 | 海特光电有限责任公司 | Narrow-pulse-width low-duty-cycle laser diode array structure |
| CN102237636A (en) * | 2010-04-26 | 2011-11-09 | 无锡亮源激光技术有限公司 | Multi-tube serial semiconductor laser module and manufacturing method thereof |
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| CN103311798A (en) * | 2012-03-16 | 2013-09-18 | 山东浪潮华光光电子股份有限公司 | Packaging structure and packaging method of large-power linear array laser device |
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| CN102593717A (en) * | 2012-03-21 | 2012-07-18 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser with ultrathin insulating layer and preparation method for semiconductor laser |
| CN102593717B (en) * | 2012-03-21 | 2014-12-03 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser with ultrathin insulating layer and preparation method for semiconductor laser |
| CN103022893A (en) * | 2012-12-25 | 2013-04-03 | 武汉电信器件有限公司 | High-frequency electrode for integration of electro-absorption modulated laser and silicon-based waveguide |
| CN103022893B (en) * | 2012-12-25 | 2015-02-18 | 武汉电信器件有限公司 | High-frequency electrode for integration of electro-absorption modulated laser and silicon-based waveguide |
| CN107567671A (en) * | 2015-04-09 | 2018-01-09 | 迪拉斯二极管有限公司 | One chip diode laser arrangement |
| CN107567671B (en) * | 2015-04-09 | 2020-07-28 | 迪拉斯二极管有限公司 | Monolithic diode laser arrangement |
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| CN109801899A (en) * | 2018-12-27 | 2019-05-24 | 全球能源互联网研究院有限公司 | A kind of power semiconductor modular |
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