CN102237636B - Multi-tube serial semiconductor laser module and manufacturing method thereof - Google Patents
Multi-tube serial semiconductor laser module and manufacturing method thereof Download PDFInfo
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- CN102237636B CN102237636B CN 201010155245 CN201010155245A CN102237636B CN 102237636 B CN102237636 B CN 102237636B CN 201010155245 CN201010155245 CN 201010155245 CN 201010155245 A CN201010155245 A CN 201010155245A CN 102237636 B CN102237636 B CN 102237636B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 114
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 229910000679 solder Inorganic materials 0.000 claims abstract description 20
- 241000218202 Coptis Species 0.000 claims description 20
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 238000003466 welding Methods 0.000 claims description 13
- 238000009413 insulation Methods 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000012774 insulation material Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 description 5
- 238000005086 pumping Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000006263 metalation reaction Methods 0.000 description 1
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Abstract
The invention relates to a multi-tube serial semiconductor laser module and a manufacturing method thereof. The module comprises a heat sink, a radiating fin, a circuit board and a plurality of semiconductor laser device chips, wherein the heat sink is provided with a front area and a rear area; the radiating fin is provided with an upper surface and a lower surface, and is welded on the front area by the lower surface; a positive routing plate, a negative routing plate, a plurality of solder plates and a plurality of inter-chip routing plates are arranged on the upper surface; the plurality of solder plates and the inter-chip routing plates are alternately arranged according to linear array rules; and solder is coated on parts with the plurality of solder plates. The circuit board is attached to the rear area, and is provided with a cathode and an anode insulated from the heat sink. The plurality of semiconductor laser device chips are arranged according to the linear array rules in a once surface mounting way, correspondingly welded on the solder plates and connected in series, wherein the two chips positioned outside are electrically connected with the positive and negative routing plates. The positive and negative routing plates are electrically connected with the cathode and anode of the circuit board respectively. Therefore, the whole semiconductor laser module is formed.
Description
Technical field
The present invention relates to semiconductor laser device in the application in solid state laser pumping field, particularly relate to a kind of many single tubes series connection (be called for short the multitube series connection, below roughly the same) semiconductor laser module and manufacture method thereof.
Background technology
It is little that high-power semiconductor laser has a volume, the characteristics that energy conversion efficiency is high, and since its invention, its power output, reliability constantly is improved.Fields such as industry, medical treatment, military affairs have been widely applied to.In its developing history, the semiconductor laser pumping device is realized its electrical connection by the multitube parallel mode always, and this parallel way requires power supply that big electric current is provided, and current range is more than from tens to 100 amperes.In addition entire circuit is all required to have the ability of bearing big electric current.Being connected in parallel of multitube semiconductor laser device is because the solder technology of semiconductor laser chip is limit.
Along with the development of technology, the photoelectric device of multi-chip series connection has become the development main trend of industry technology and product.With the multi-chip serial connection technology device operation current is reduced significantly, the current carrying capacity of tackling power supply and entire circuit mutually requires to reduce greatly (being down to some amperes).The multi-chip series connection device that exists in the market is by ready-made single-chip devices accumulation and forms, and its manufacture craft is numerous and diverse, and workpiece quantity is many, and is very tight to the workpiece size tolerance, so manufacturing cost is higher.If a plurality of chips can be made by a paster, then can solve above-mentioned all problems.
CN201199606Y is and the immediate prior art of the application.
Summary of the invention
The purpose of this invention is to provide a kind of semiconductor laser module and manufacture method thereof of under low current, using of being suitable for, mode by a paster with multiple semiconductor laser devices spare chips welding on a fin, and by gold thread these chips are connected, so that manufacture craft is simple, reduce manufacturing cost.
According to one embodiment of the invention, a kind of multitube series connection semiconductor laser module comprises: one is heat sink, has a front region and a rear area; One fin, have a upper surface and a lower surface, and be welded on this front region by this lower surface, preparation has an anodal routing dish, a negative pole routing dish, a plurality of scolder dish and a plurality of chip chamber routing dish that is electrically insulated from each other on this upper surface, these a plurality of scolder dishes are regularly arranged and alternate one by one by linear array with these a plurality of chip chamber routing dishes, and the position of these a plurality of scolder dishes scribbles scolder; One circuit board is attached on this rear area, and has the anodal and negative pole with this heat sink insulation; A plurality of semiconductor laser device chips in the mode of a paster, are welded on these a plurality of scolder dishes by the regularly arranged correspondence of linear array, and these a plurality of semiconductor laser device chip series connection; Wherein, two semiconductor laser device chips that are positioned at the outside in the semiconductor laser device chip of these a plurality of series connection also are electrically connected with this positive pole routing dish and the negative pole routing dish of described fin respectively, and should also be electrically connected with this negative pole and this positive pole of described circuit board respectively with this negative pole routing dish by positive pole routing dish, thereby constitute a complete semiconductor laser module.
According to one embodiment of the invention, described fin is made by the heat-conduction electric insulation material, and gold-plated respectively on its upper and lower surface, scribbles described scolder on the position of a plurality of scolder dishes of gold-plated this.
According to one embodiment of the invention, described heat sinkly made by pure copper material, and its surface gold-plating, this is heat sink to have both ends and the pars intermedia between these both ends, these both ends are higher than this pars intermedia and define a sunk area, this sunk area constitutes described front region, rear area respectively near the part at the place ahead, rear, and this fin, these a plurality of semiconductor laser device chips, this circuit board all are positioned at this sunk area.
According to one embodiment of the invention, also be formed with the processing through hole on these both ends that this is heat sink, this is heat sink to user side parts with mechanically fastening.
According to one embodiment of the invention, this positive pole routing dish of described fin and this negative pole routing dish are positioned at the back side of leaning on of these a plurality of scolder dishes and these a plurality of chip chamber routing dishes, and this negative pole with this circuit board is adjacent with this positive pole respectively, this positive pole routing dish and this negative pole routing dish also respectively are formed with an extension, are enclosed in the outside of the scolder dish at these two the semiconductor laser device chip places that are positioned at the outside respectively.
According to one embodiment of the invention, for two these adjacent semiconductor laser device chips, one of them is electrically connected with therebetween this chip chamber routing dish by first gold thread, and another described scolder that then passes through on its place scolder dish is electrically connected with this chip chamber routing dish; And for two semiconductor laser device chips that are positioned at the outside, the extension of one of them this positive pole routing dish by the scolder on the scolder dish at its place and described fin and negative pole routing dish the two one of them is electrically connected, another then by second gold thread be electrically connected to this positive pole routing dish of described fin and negative pole routing dish the two wherein on another the extension; And this positive pole routing dish and this negative pole routing dish are to be electrically connected with this negative pole and this positive pole of described circuit board by the 3rd gold thread.
According to another embodiment of the present invention, a kind of manufacture method of multitube series connection semiconductor laser module comprises:
One fin is provided, its upper surface preparation has an anodal routing dish, a negative pole routing dish, a plurality of scolder dish and a plurality of chip chamber routing dish that is electrically insulated from each other, these a plurality of scolder dishes are regularly arranged and alternate one by one by linear array with these a plurality of chip chamber routing dishes, and the position of these a plurality of scolder dishes scribbles scolder;
With the mode of a plurality of semiconductor laser device chips with a paster, and be welded on by the regularly arranged correspondence of linear array on these a plurality of scolder dishes of this fin;
Should connect by a plurality of semiconductor laser device chips, and two semiconductor laser device chips outside will being positioned at are electrically connected with this positive pole routing dish, this negative pole routing dish respectively;
Provide one heat sink, have one on it near the front region in the place ahead and a rear area near the rear;
This fin that is in series with these a plurality of semiconductor laser device chips is fixed on this this heat sink front region with welding manner, and a circuit board is attached on this this heat sink rear area, wherein this circuit board has the anodal and negative pole with this heat sink insulation;
Deliver to wire bonder with being welded on this this fin on heat sink, this positive pole routing dish on this fin is linked to each other with this positive pole with this negative pole of this circuit board respectively by gold thread with this negative pole routing dish, thereby constitute a complete semiconductor laser module.
According to another embodiment of the present invention, described fin is made by the heat-conduction electric insulation material, and the upper surface of described fin and lower surface are gold-plated respectively, and a plurality of scolder dish of gold-plated this position scribbles described scolder, and described heat sinkly made and surface gold-plating by pure copper material.
According to another embodiment of the present invention, the step on described these a plurality of scolder dishes that a plurality of semiconductor laser device chips are welded on this fin in the mode of a paster comprises:
These a plurality of semiconductor laser device chips are put into respectively on the position of these a plurality of scolder dishes that scribble described scolder on this fin in advance with the anchor clamps location, and make it regularly arranged according to linear array;
With this fin and on a plurality of semiconductor laser device chips be heated above 20～40 degrees centigrade of scolder fusing points, thereby should a plurality of semiconductor laser device chip correspondences be welded on these a plurality of scolder dishes.
According to another embodiment of the present invention, described this fin that will be connected in series with these a plurality of semiconductor laser device chips comprises with the step that welding manner is fixed on this this heat sink front region:
The solder sheet that a slice is identical with this heat sink sizes is placed on this this heat sink front region;
With this solder sheet and this fin with the anchor clamps location and deliver to heating and dissolve this solder sheet, thereby with this fin be welded on this heat sink on, wherein heating-up temperature is higher than 20～40 degrees centigrade of this solder sheet fusing points.
The paster solution is proposed one time.Device and module after this scheme basis is through sealing can be used in various suitable applications.
According to above aspect of the present invention, the present invention is welded on a plurality of single tube semiconductor laser device chips on the fin according to the regularly arranged correspondence of linear array by a paster mode, the a plurality of single tube semiconductor laser device chips that so are arranged on the fin connect into device circuitry with series system, the above-mentioned multitube semiconductor laser device chip that connects in series and fin with welding manner be fixed on one heat sink on, the heat that described semiconductor laser device chip produces heat sinkly distributes to guarantee that described semiconductor laser device chip is unlikely overheated and damage by described.The fin and the chip that are welded on heat sink are delivered to wire bonder, with fin be attached to circuit board on heat sink and link to each other and constitute complete semiconductor laser module.This semiconductor laser module can be applied to various suitable applications through device and the module after sealing, and for example is applied to solid state laser pumping field, perhaps is applied to the illumination under the fixed range condition.Make semiconductor laser module by method of the present invention, can also simplify manufacture craft effectively, reduce manufacturing cost.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is the structural representation of semiconductor laser module of the present invention;
Fig. 2 is the manufacture method flow chart of semiconductor laser module of the present invention;
Fig. 3 A～Fig. 3 D is the corresponding view of each flow process of the manufacture method among Fig. 2.
Embodiment
As shown in Figure 1, a kind of multitube series connection semiconductor laser module 100 that the present invention discloses, the gold thread that it includes heat sink 10, one fin 20, a circuit board 30, a plurality of semiconductor laser device chip 40 and is used for being electrically connected.Wherein the p face of these a plurality of semiconductor laser device chips 40 is welded on this fin 20, and links to each other with circuit on this fin 20 by gold thread, thereby realizes that multi-chip is connected in series.The multitube semiconductor laser device chip 40 of series connection and fin 20 usefulness welding manners are fixed on this on heat sink 10.Roughly regularly arranged by linear array in this heat sink 10 close center, the place ahead after described semiconductor laser device chip 40 is installed, for example arrange in line.Be welded on this fin 20 on heat sink 10 and be attached to this electrode on heat sink 10 and link to each other by gold thread, thereby constitute a complete described semiconductor laser module 100.
Fig. 2 is the flow process of the manufacture method 200 of semiconductor laser module of the present invention, and Fig. 3 A～Fig. 3 D and Fig. 1 are the corresponding view of each flow process of manufacture method of the present invention.Wherein, the concrete structure of above-mentioned heat sink 10, heating panel 20, circuit board 30 also will be described in detail therein.Below in conjunction with Fig. 1～Fig. 3 D, describe the manufacture method 200 of semiconductor laser module of the present invention in detail:
Step 210 provides a fin 20, as is surface metalation one ceramic heat-dissipating sheet.As shown in Figure 3A, it shows the state before fin 20 is installed with these a plurality of semiconductor laser device chips 40.Wherein, this fin 20 is made by the heat-conduction electric insulation material, and has a upper surface 201 and a lower surface 202, and is gold-plated on this upper surface 201, the lower surface 202, is used for conduction and is convenient to welding.And also preparing on the upper surface 201 of this fin has an anodal routing dish 21, a negative pole routing dish 22, a plurality of scolder dish 23 that is electrically insulated from each other
1～23
6, and a plurality of chip chamber routing dish 24
1～24
5, these a plurality of scolder dishes 23
1～23
6The position scribble scolder 25.
In an embodiment of the present invention, these a plurality of scolder dishes 23
1～23
6With these a plurality of chip chamber routing dishes 24
1～24
5Regularly arranged and alternate one by one by linear array, specifically, these a plurality of scolder dishes 23
1～23
6With these a plurality of chip chamber routing dishes 24
1～24
5According to scolder dish 23
1, chip chamber routing dish 24
1, scolder dish 23
2, chip chamber routing dish 24
2..., scolder dish 23
5, chip chamber routing dish 24
5, scolder dish 23
6The position arrange separately and be arranged into straight line that wherein the scolder dish 23
1With scolder dish 23
6Lay respectively at the outermost both sides.This positive pole routing dish 21 and this negative pole routing dish 22 of described fin 20 are positioned at this a plurality of scolder dishes 23
1～23
6And these a plurality of chip chamber routing dishes 24
1～24
5By back one side, this positive pole routing dish 21 and this negative pole routing dish 22 also respectively are formed with an extension 211,221, are enclosed in these two the scolder dishes 23 that are positioned at the outside respectively
1, 23
6The outside.
Wherein, these a plurality of scolder dishes 23
1～23
6Adjacent these a plurality of chip chamber routing dishes 24 respectively and with it
1～24
5Electric insulation, for example the scolder dish 23
1Adjacent chip chamber routing dish 24 with it
1Electric insulation, scolder dish 23
2Adjacent chip chamber routing dish 24 with it
2Electric insulation etc.And these a plurality of chip chamber routing dishes 24
1～24
5Adjacent next scolder dish 23 respectively and with it
2～23
6Be electrically connected, for example chip chamber routing dish 24
1Adjacent next scolder dish 23 with it
2Electrical connection, chip chamber routing dish 24
2Adjacent next scolder dish 23 with it
3Be electrically connected etc.And, the scolder dish 23 outside being positioned at
1Be electrically connected with the extension 211 of this positive pole routing dish 21, and the scolder dish 23 outside being positioned at
6With extension 221 electric insulations of this negative pole routing dish 21, so arrange so that being connected in series of follow-up a plurality of semiconductor laser device 40.
Particularly, the present invention is earlier should a plurality of semiconductor laser device chips 40
1～40
6With the anchor clamps location, be put into these a plurality of scolder dishes 23 that scribble described scolder 25 on this fin 20 in advance in order one by one by anchor clamps respectively
1～23
6The position on, and make it regularly arranged according to linear array; Then with this fin 20 and on a plurality of semiconductor laser device chips 40
1～40
6Be heated above 20～40 degrees centigrade of scolder fusing points, thus should a plurality of semiconductor laser device chips 40
1～40
6Correspondence is welded on this a plurality of scolder dishes 23
1～23
6On, shown in Fig. 3 B, show fin 20 and these a plurality of semiconductor laser device chips 40
1～40
6State after the welding.
In the present invention, because these a plurality of semiconductor laser device chips 40
1～40
6Regularly arranged by linear array, and the semiconductor laser device chip 40 in this outside
1After welding, be electrically connected with the anodal routing dish 21 of this fin 20, therefore, can will be welded with this a plurality of semiconductor laser device chips 40
1～40
6This fin 20 deliver to wire bonder, can should a plurality of semiconductor laser device chips 40 through once beating gold thread
1～40
6Be connected in series, and semiconductor laser device chip 40 that will this outside
6Be electrically connected with the extension 221 of the negative pole routing dish 22 of this fin 20, thus semiconductor laser device chip 40 that will these a plurality of series connection
1～40
6Link to each other with the circuit (anodal routing dish 21 and negative pole routing dish 22) of this fin 20, shown in Fig. 3 C, show these a plurality of semiconductor laser device chips 40 on the fin 20
1～40
6Be connected in series behind the economy-combat gold thread, and the state that further is connected with the circuit of this fin 20.
Particularly, a plurality of semiconductor laser device chips 40 of this behind a routing
1～40
6Adjacent chip chamber routing dish 24 respectively and with it
1～24
5Link to each other by gold thread 51, this is positioned at the semiconductor laser device chip 40 in the outside
6Link to each other by gold thread 52 with the extension 221 of the negative pole routing dish 22 of this fin.And because these a plurality of chip chamber routing dishes 24
1～24
5The scolder dish 23 adjacent with next
2～23
6Between be electrically connected therefore these a plurality of semiconductor laser device chips 40
1～40
6Behind a routing, can be connected in series.This a plurality of semiconductor laser device chips 40 thus
1～40
6Series connection, and further link to each other with the circuit of this fin.
Particularly, shown in Fig. 3 D, the present invention can be by being placed on a slice and this fin 20 measure-alike solder sheet (not shown) on this this front region 131 of heat sink 10; Then with this solder sheet and this fin 20(together with a plurality of semiconductor laser device chips 40 on it) with the anchor clamps location and deliver to heating and dissolve this solder sheet, thereby this fin 20 is welded on this on heat sink 10, and wherein heating-up temperature is higher than 20～40 degrees centigrade of this solder sheet fusing points.
This circuit board 30 also can be welded on this on heat sink 10 with the measure-alike solder sheet of this circuit board 30 by one.And this fin 20, circuit board 30 all are positioned at this this sunk area 130 of heat sink 10 after welding.
Be electrically connected between step 260, fin and circuit board.Deliver to wire bonder with being welded on this this fin 20 on heat sink 10, this positive pole routing dish 21 on this fin 20 is linked to each other with this positive pole 32 with this negative pole 31 of this circuit board 30 respectively by gold thread 53 with this negative pole routing dish 22, thereby constitute a complete semiconductor laser module, as shown in Figure 1.
Fig. 1 shows heat sink 10, fin 20 after the assembling, circuit board 30 economy-combat gold threads and the circuit (anodal routing dish 21 and negative pole routing dish 22) of fin 20 and the circuit of circuit board 30 (anodal 31 and negative pole 31) can be linked to each other, thereby constitute a complete semiconductor laser module 100, the fin 20(after installing comprises the semiconductor laser device chip 40 on it), circuit board 30 and all gold threads 51～53 all be positioned at this sunk area of heat sink 10 130.Wherein, this gold thread 53 preferably can be positioned near these both ends of heat sink 10 11,12 position.And the heat that these semiconductor laser device chips 40 produce can distribute to guarantee that described semiconductor laser device chip is unlikely overheated and damage by described heat sink 10.
Device and the module of semiconductor laser module 100 of the present invention after sealing can be used in various suitable applications, for example can be applied to solid state laser pumping field, also can be used for the illumination under the fixed range condition.
More than show and described and be applied to throw light on and principle and assembling signal that the semiconductor laser of other field studies is touched piece.The present invention is not subjected to the restriction of above-mentioned example, and under the prerequisite that does not break away from the principle of the invention, the present invention also has the changes and improvements of other modes.These changes and improvements all fall into the scope of protection of present invention, and the claimed scope of the present invention is defined by appended claim and equivalent thereof.
Claims (10)
1. a multitube series connection semiconductor laser module comprises a heat sink and fin, and wherein this fin has a upper surface and a lower surface, it is characterized in that, comprising:
This is heat sink to have a front region and a rear area;
This fin is welded on this front region by this lower surface, preparation has an anodal routing dish, a negative pole routing dish, a plurality of scolder dish and a plurality of chip chamber routing dish that is electrically insulated from each other on this upper surface, these a plurality of scolder dishes are regularly arranged and alternate one by one by linear array with these a plurality of chip chamber routing dishes, and the position of these a plurality of scolder dishes scribbles scolder;
One circuit board is attached on this rear area, and has the anodal and negative pole with this heat sink insulation;
A plurality of semiconductor laser device chips in the mode of a paster, are welded on these a plurality of scolder dishes by the regularly arranged correspondence of linear array, and these a plurality of semiconductor laser device chip series connection;
Wherein, two semiconductor laser device chips that are positioned at the outside in the semiconductor laser device chip of these a plurality of series connection also are electrically connected with this positive pole routing dish and the negative pole routing dish of described fin respectively, and should also be electrically connected with this negative pole and this positive pole of described circuit board respectively with this negative pole routing dish by positive pole routing dish, thereby constitute a complete semiconductor laser module.
2. multitube series connection semiconductor laser module according to claim 1 is characterized in that described fin is made by the heat-conduction electric insulation material, and gold-plated respectively on its upper and lower surface, scribbles described scolder on the position of a plurality of scolder dishes of gold-plated this.
3. multitube according to claim 2 series connection semiconductor laser module, it is characterized in that, described heat sinkly made by pure copper material, and its surface gold-plating, this is heat sink to have both ends and the pars intermedia between these both ends, these both ends are higher than this pars intermedia and define a sunk area, this sunk area constitutes described front region, rear area respectively near the part at the place ahead, rear, and this fin, these a plurality of semiconductor laser device chips, this circuit board all are positioned at this sunk area.
4. multitube according to claim 3 series connection semiconductor laser module is characterized in that, also is formed with the processing through hole on these both ends that this is heat sink, and this is heat sink to user side parts with mechanically fastening.
5. according to claim 2 or 3 or 4 described multitube series connection semiconductor laser modules, it is characterized in that, this positive pole routing dish of described fin and this negative pole routing dish are positioned at the back side of leaning on of these a plurality of scolder dishes and these a plurality of chip chamber routing dishes, and this negative pole with this circuit board is adjacent with this positive pole respectively, this positive pole routing dish and this negative pole routing dish also respectively are formed with an extension, are enclosed in the outside of the scolder dish at these two the semiconductor laser device chip places that are positioned at the outside respectively.
6. multitube according to claim 5 series connection semiconductor laser module, it is characterized in that, for two these adjacent semiconductor laser device chips, one of them is electrically connected with therebetween this chip chamber routing dish by first gold thread, and another described scolder that then passes through on its place scolder dish is electrically connected with this chip chamber routing dish; And for two semiconductor laser device chips that are positioned at the outside, the extension of one of them this positive pole routing dish by the scolder on the scolder dish at its place and described fin and negative pole routing dish the two one of them is electrically connected, another then by second gold thread be electrically connected to this positive pole routing dish of described fin and negative pole routing dish the two wherein on another the extension; And this positive pole routing dish and this negative pole routing dish are to be electrically connected with this negative pole and this positive pole of described circuit board by the 3rd gold thread.
7. the manufacture method of multitube series connection semiconductor laser module, comprise a fin, a plurality of semiconductor laser device chip and one heat sink are provided, wherein this fin has a upper surface and a lower surface, it is characterized in that, the manufacture method of this multitube series connection semiconductor laser module also comprises:
This upper surface preparation at this fin has an anodal routing dish, a negative pole routing dish, a plurality of scolder dish and a plurality of chip chamber routing dish that is electrically insulated from each other, these a plurality of scolder dishes are regularly arranged and alternate one by one by linear array with these a plurality of chip chamber routing dishes, and the position of these a plurality of scolder dishes scribbles scolder;
With the mode of these a plurality of semiconductor laser device chips with a paster, and be welded on by the regularly arranged correspondence of linear array on these a plurality of scolder dishes of this fin;
Should connect by a plurality of semiconductor laser device chips, and two semiconductor laser device chips outside will being positioned at are electrically connected with this positive pole routing dish, this negative pole routing dish respectively;
Provide one heat sink, have one on it near the front region in the place ahead and a rear area near the rear;
This fin that is in series with these a plurality of semiconductor laser device chips is fixed on this this heat sink front region with welding manner, and a circuit board is attached on this this heat sink rear area, wherein this circuit board has the anodal and negative pole with this heat sink insulation;
Deliver to wire bonder with being welded on this this fin on heat sink, this positive pole routing dish on this fin is linked to each other with this positive pole with this negative pole of this circuit board respectively by gold thread with this negative pole routing dish, thereby constitute a complete semiconductor laser module.
8. the manufacture method of multitube according to claim 7 series connection semiconductor laser module, it is characterized in that, described fin is made by the heat-conduction electric insulation material, and the upper surface of described fin and lower surface are gold-plated respectively, the a plurality of scolder dish of gold-plated this position scribbles described scolder, and described heat sinkly made and surface gold-plating by pure copper material.
9. according to the manufacture method of claim 7 or 8 described multitubes series connection semiconductor laser modules, it is characterized in that the step on described these a plurality of scolder dishes that a plurality of semiconductor laser device chips are welded on this fin in the mode of a paster comprises:
These a plurality of semiconductor laser device chips are put into respectively on the position of these a plurality of scolder dishes that scribble described scolder on this fin in advance with the anchor clamps location, and make it regularly arranged according to linear array;
With this fin and on a plurality of semiconductor laser device chips be heated above 20～40 degrees centigrade of scolder fusing points, thereby should a plurality of semiconductor laser device chip correspondences be welded on these a plurality of scolder dishes.
10. the manufacture method of multitube according to claim 9 series connection semiconductor laser module, it is characterized in that described this fin that will be connected in series with these a plurality of semiconductor laser device chips comprises with the step that welding manner is fixed on this this heat sink front region:
The solder sheet that a slice is identical with this heat sink sizes is placed on this this heat sink front region;
With this solder sheet and this fin with the anchor clamps location and deliver to heating and dissolve this solder sheet, thereby with this fin be welded on this heat sink on, wherein heating-up temperature is higher than 20～40 degrees centigrade of this solder sheet fusing points.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010155245 CN102237636B (en) | 2010-04-26 | 2010-04-26 | Multi-tube serial semiconductor laser module and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010155245 CN102237636B (en) | 2010-04-26 | 2010-04-26 | Multi-tube serial semiconductor laser module and manufacturing method thereof |
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| CN102237636A CN102237636A (en) | 2011-11-09 |
| CN102237636B true CN102237636B (en) | 2013-08-14 |
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| CN104283108A (en) * | 2013-07-11 | 2015-01-14 | 山东浪潮华光光电子股份有限公司 | High-power laser module and packaging method thereof |
| CN104269736B (en) * | 2014-10-09 | 2017-05-24 | 西安炬光科技有限公司 | High power semiconductor laser of conduction cooling laminated array |
| CN108321674A (en) * | 2015-03-30 | 2018-07-24 | 青岛海信宽带多媒体技术有限公司 | Laser emitter |
| CN107706734A (en) * | 2017-10-13 | 2018-02-16 | 中国电子科技集团公司第十三研究所 | A kind of dense arrangement pulse laser |
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