CN111370991A - Semiconductor laser, stacked array and horizontal array of insulating type heat sink - Google Patents
Semiconductor laser, stacked array and horizontal array of insulating type heat sink Download PDFInfo
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- CN111370991A CN111370991A CN201911333527.5A CN201911333527A CN111370991A CN 111370991 A CN111370991 A CN 111370991A CN 201911333527 A CN201911333527 A CN 201911333527A CN 111370991 A CN111370991 A CN 111370991A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 241000416536 Euproctis pseudoconspersa Species 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 47
- 238000000034 method Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a semiconductor laser, a stacked array and a horizontal array of an insulating heat sink, belonging to the technical field of semiconductor lasers, and comprising a heat sink, wherein the heat sink comprises a microchannel which is symmetrically radiated from top to bottom; a second conducting layer is arranged at the lower end of the second insulating layer, a second chip is arranged at the front end of the second conducting layer, and a second insulating sheet is arranged at the rear end of the second chip. The structure of the double chips is symmetrically arranged at the upper end and the lower end of the heat sink, so that the output power of the semiconductor laser is greatly improved, heat generated by the double chips is quickly taken away, the integral heat of a product in working is reduced, the reliability of the product is ensured, and the packaging structure of the double chips can greatly reduce the production cost.
Description
Technical Field
The invention belongs to the technical field of semiconductor lasers, and particularly relates to a semiconductor laser with an insulating heat sink, a stacked array and a horizontal array.
Background
The semiconductor laser has the advantages of small volume, light weight, high reliability, long service life and the like, and is widely applied to various fields of national economy at present.
The semiconductor laser of the existing insulation type heat sink generally has the problems of low power density of stacked arrays and high production cost, and the heat sink of the existing high-power semiconductor laser adopts a micro-channel structure which at least comprises five layers of sheet structures and is integrated in a hot pressing mode. The heat sink is characterized in that the heat sink is respectively a lowermost layer, a water inlet layer, a middle barrier layer, a water outlet layer and an uppermost layer from bottom to top (one surface of a packaged chip is an upper surface), and each heat sink is designed to at least comprise five functional layers, so that the thickness of each layer is not less than 0.2mm in order to ensure that the heat sink has certain strength; the insulating type semiconductor laser heat sink is formed by attaching insulating materials such as aluminum nitride ceramics with certain thickness on the upper surface and the lower surface of the original micro-channel semiconductor laser heat sink, the thickness of the heat sink is increased, and the problems of low power density and high production cost caused by circuit connection problem when power expansion of a stacked array in the vertical direction is performed are solved;
it is noted that patent CN 206575010U improves power density by attaching the lower surface of the chip to the upper surface of the existing microchannel semiconductor laser heat sink (attaching the chip to the P surface of the heat sink) in a reverse manner (attaching the chip to the N surface of the heat sink), but when the micro-channel semiconductor laser heat sink works, more than 80% of heat of the chip is generated on the P surface of the chip (attaching the chip to the N surface of the heat sink), which cannot ensure heat dissipation of the product of the lower surface reverse packaging product, and the product performance is not reliable, and the above scheme can only be applied to the existing microchannel semiconductor laser heat sink, the laser heat sink in this structure is electrified when working, and there is electrochemical reaction of refrigerant liquid during the use process, so that the generated; patent CN 105703213 a discloses a heat sink insulated liquid refrigeration semiconductor laser and its stacked array, which provides a packaging and circuit connection mode for insulated semiconductor laser product, but the vertical stacked array has large spacing between light emitting chips, low power density and high cost; patent CN 107565376 a provides another insulated semiconductor laser product package and circuit connection mode, because it realizes the conduction of the positive and negative electrodes on the left and right sides of the same surface of the heat sink, but the width of the insulated MCC is limited, the number of gold wires connecting the chip with it is reduced, and it is unable to realize large current operation.
The packaging structure and the stacked array electric connection scheme of the patent cannot simultaneously solve the problems of product reliability, high power density, vertical stacked array circuit connection, horizontal array circuit connection, work under high current, high production cost and the like.
Disclosure of Invention
The invention aims to: in order to solve the problems of low power density and high production cost of the stacked array in the prior art, the front surface and the back surface of the insulated semiconductor laser are respectively packaged with the chips in a front-attached structure, so that the problems of low power density, high production cost, poor reliability, high-current, high-power and stable work and the like of the vertical stacked array or the horizontal array in the patent are solved, meanwhile, the power-on work of a single chip in a stacked array product can be realized through the circuit connection design, and the requirements of testing, screening and optical shaping of the single chip in the subsequent stacked array can be realized.
The technical scheme adopted by the invention is as follows:
an insulating heat sink semiconductor laser comprises a heat sink, wherein the heat sink comprises a microchannel which is symmetrically cooled up and down, a first insulating layer and a second insulating layer are symmetrically arranged on the upper side and the lower side of the heat sink respectively, a first conducting layer is arranged on the upper surface of the first insulating layer, a first chip is arranged at the front end of the first conducting layer, a first insulating sheet is arranged at the rear end of the first chip, and first conducting sheets are arranged on the first chip and the first insulating sheet;
the lower end of the second insulating layer is provided with a second conducting layer, the front end of the second conducting layer is provided with a second chip, the rear end of the second chip is provided with a second insulating sheet, and a second conducting sheet is arranged on the second chip and the second insulating sheet.
Further preferably, the first conductive layer and the second conductive layer are gold-plated ceramic structures, that is, contain gold plating layers or are plated with gold after copper is coated.
In a further preferred embodiment of the present invention, the first chip and the second chip are directly soldered to the front end surfaces of the first conductive layer and the second conductive layer by solder.
Further preferably, the P-faces of the first chip and the second chip are disposed on a side close to the heat sink.
A semiconductor laser stacked array of an insulation type heat sink is formed by sequentially and vertically arranging at least three semiconductor lasers along the slow axis direction of the semiconductor lasers.
A horizontal array of semiconductor lasers with insulating heat sinks is formed by sequentially and horizontally arranging at least three semiconductor lasers along the slow axis direction of the semiconductor lasers.
The working principle is as follows: the current at the upper end of the heat sink is introduced by the first conducting layer, flows to the P surface to the N surface of the first chip and is finally led out through the first conducting strip at the back of the first chip;
the current at the upper end of the heat sink is introduced by the second conducting layer, flows to the P surface to the N surface of the second chip and is finally led out through the second conducting strip on the back surface of the second chip;
the luminous zone of chip is in the P face of chip, and its a large amount of heats that produce in the course of the work, because P face beading is close to one side of heat sink, can take away a large amount of heats that the chip produced fast through the microchannel of heat sink to guarantee the reliable and stable nature of semiconductor laser work.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. the invention adopts a structure that double chips are symmetrical at the upper end and the lower end of the heat sink, which can greatly improve the output power of the semiconductor laser, and simultaneously, the heat generated by the double chips is quickly taken away by depending on the micro-channel structure of the insulating heat sink, so that the integral heat is reduced, thereby ensuring the reliability of the product.
2. The circuit connection mode and the electrode design of the vertical stacked array can realize the power-on work of a single chip in a stacked array product, and the requirements of the work test screening and the optical shaping of the single chip in the subsequent stacked array are facilitated
Drawings
The invention will now be described, by way of example, with reference to the accompanying drawings, in which:
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic diagram of the structure of a stacked array according to the present invention;
FIG. 3 is a schematic diagram of the structure of a horizontal array of the present invention;
fig. 4 is a schematic diagram of the structure of the horizontal array of the present invention.
Reference numerals: 1-a first chip, 2-a second chip, 3-a first conductive sheet, 4-a second conductive sheet, 5-a first insulating sheet, 6-a second insulating sheet, 7-a first insulating layer, 8-a second insulating layer, 9-a heat sink, 10-a positive fixing block, 11-a negative fixing block, 12-a transfer connecting sheet, 13-a transfer connecting sheet, 14-a fixing block, 15-a U-shaped electrode, 16-a transfer connecting sheet, 17-a fixing block two, 21-a first semiconductor laser, 22-a second semiconductor laser, 23-a third semiconductor laser, 24-a fourth semiconductor laser, 25-a fifth semiconductor laser, 26-an upper platen, 27-an upper platen two, 28-a negative electrode sheet, 29-insulation sheet, 30-anode electrode sheet.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are for purposes of illustration only and are not to be construed as limiting the invention, i.e., the described embodiments are merely a few embodiments of the invention, rather than all embodiments, and that all of the features disclosed in this specification, or all of the steps in any method or process disclosed, may be combined in any manner, except for mutually exclusive features and/or steps.
It should be noted that the terms "length," "width," "height," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "head," "tail," and the like, indicate orientations or positional relationships that are based on the orientations or positional relationships illustrated in the drawings, are used for convenience in describing the invention and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated, and therefore should not be construed as limiting the invention.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The present invention will be described in detail with reference to fig. 1, 2 and 3.
The first embodiment is as follows: an insulating heat sink semiconductor laser comprises a heat sink 9, wherein the heat sink 9 comprises a microchannel which is symmetrically heat-dissipating up and down, a first insulating layer 7 and a second insulating layer 8 are symmetrically arranged on the heat sink 9 up and down respectively, a first conducting layer is arranged on the upper surface of the first insulating layer 7, a first chip 1 is arranged at the front end of the first conducting layer, a first insulating sheet 5 is arranged at the rear end of the first chip 1, and first conducting sheets 3 are arranged on the first chip 1 and the first insulating sheet 5;
a second conducting layer is arranged at the lower end of the second insulating layer 8, a second chip 2 is arranged at the front end of the second conducting layer, a second insulating sheet 6 is arranged at the rear end of the second chip 2, and a second conducting sheet 4 is arranged on the second chip 2 and the second insulating sheet 6.
The first conducting layer and the second conducting layer are of gold-plated ceramic structures, namely, gold-plated layers are contained or gold plating is carried out after copper coating is carried out, the first chip 1 and the second chip 2 are directly welded on the front end surfaces of the first conducting layer and the second conducting layer through welding fluxes, and the P surfaces of the first chip 1 and the second chip 2 are arranged on one side close to the heat sink 9.
The single-side working principle of the semiconductor laser with the insulating heat sink is as follows: the current at the upper end of the heat sink 9 is introduced by the first conducting layer, flows to the P surface to the N surface of the first chip 1, and is finally led out through the first conducting sheet 3 at the back of the first chip 1;
the current at the lower end of the heat sink 9 is introduced by the second conductive layer, flows to the P surface to the N surface of the second chip 2, and is finally led out through the second conductive sheet 4 on the back surface of the second chip 2;
the luminous zone of chip is in the P face of chip, and its a large amount of heats that produce in the course of the work, because P face beading is close to one side of heat sink 9, can take away a large amount of heats that the chip produced fast through the microchannel of heat sink 9 to guarantee the reliable and stable nature of semiconductor laser work.
The second embodiment: the stacked array of semiconductor lasers with insulated heat sinks is formed by sequentially and vertically arranging at least three semiconductor lasers along the slow axis direction of the semiconductor lasers, wherein the semiconductor lasers are vertically combined by adding a switching connecting sheet, a U-shaped electrode and an insulating sheet, and the semiconductor lasers are electrically connected in a way that the upper surface working area of each semiconductor laser of the stacked array is firstly connected in series, then the tail end of each semiconductor laser is connected in a switching way through the U-shaped electrode, and the lower surface working area of the other side of each semiconductor laser is connected in series. The following examples are stacked with 5 insulating heat sink 9 semiconductor lasers:
as shown in fig. 2, a current passes through the fixed anode block 10, connects to the interposer tab 12, and is introduced into the first conductive layer on the upper surface of the first semiconductor laser 21, flows into the first conductive sheet 3 from the P surface to the N surface of the first chip 1, then flows into the first conductive layer on the lower surface of the second semiconductor laser 22 through the interposer tab 13 (the upper surface is provided with an insulating sheet), and so on through the upper surface working areas of the second semiconductor laser 22, the third semiconductor laser 23, the fourth semiconductor laser 24, and the fifth semiconductor laser 25, and then is introduced into the fixed block 14 (the upper surface is attached with an insulating sheet) from the first conductive sheet 3 of the fifth semiconductor laser 25; as shown in fig. 3, the other side of the stacked array is transferred to the second conducting layer on the lower surface of the fifth semiconductor laser 25 through the U-shaped electrode 15 (the lower surface is attached with an insulating sheet), passes through the P surface to the N surface of the second chip 2, flows into the second conducting sheet 4, flows into the second conducting layer on the lower surface of the fourth semiconductor laser 24 through the transfer connecting sheet 16 (the lower surface is attached with an insulating sheet), and so on, sequentially passes through the fourth semiconductor laser 24, the third semiconductor laser 23, the second semiconductor laser 22, and the second conducting layer working area on the lower surface of the first semiconductor laser 21, and finally, the second fixing block 17 is introduced into the second conducting sheet 4 of the first semiconductor laser 21, and flows into the negative fixing block 11, thereby completing the circuit conduction of the whole.
In summary, the connecting electrodes can be screwed into the threaded holes to fix the lead-in electrodes, so as to realize the function of independent operation of each light-emitting source.
The third embodiment is as follows: as shown in fig. 4, a horizontal array of semiconductor lasers with an insulating heat sink is formed by at least three semiconductor lasers horizontally arranged in sequence along the slow axis direction of the semiconductor lasers. The electrical connection mode is that the upper and lower working areas of the semiconductor laser are connected firstly, and then the semiconductor laser is connected in series with the horizontally arranged semiconductor lasers, and a horizontal array composed of 3 insulating semiconductor lasers is exemplified as follows:
the current enters the first semiconductor laser 21 through the positive electrode plate 30, flows into the second conductive plate 4 from the P surface to the N surface of the second chip 2 through the second conductive layer on the lower surface, flows into the first conductive layer on the upper surface of the first semiconductor laser 21 through the switching connection sheet 10 from the P surface to the N surface of the first chip 1, flows into the first conductive sheet 3, then flows into the switching electrode sheet 13 through the upper cover plate 26 (the lower surface of the electrode sheet 13 is insulated from the switching electrode 10), and then enters the second conductive layer on the lower surface of the second semiconductor laser 22 through the switching electrode sheet 13. The light passes through the second semiconductor laser 22 and the third semiconductor laser 23 in sequence by analogy; and finally, the second upper pressure cover plate 27 of the third semiconductor laser 23 is led into the negative electrode plate 28 to flow out, so that the horizontal array circuit connection is completed.
The fixed connection, fixed mounting or fixed arrangement mode comprises the existing common technologies, such as bolt fixing, welding, riveting and the like, and all the technologies play a role in fixing without influencing the overall effect of the device.
And the upper gland plate II are made of copper or other conductive materials.
The water passing bases of the stacked array and the horizontal array are made of insulating materials such as engineering plastics.
Although the invention has been described herein with reference to a number of illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this disclosure. More specifically, various variations and modifications are possible in the component parts and/or arrangements of the subject combination arrangement within the scope of the disclosure and claims of this application. In addition to variations and modifications in the component parts and/or arrangements, other uses will also be apparent to those skilled in the art.
Claims (6)
1. An insulating heat sink semiconductor laser comprises a heat sink (9), wherein the heat sink (9) comprises micro-channels which are vertically symmetrically cooled, and the insulating heat sink is characterized in that a first insulating layer (7) and a second insulating layer (8) are respectively and symmetrically arranged on the upper side and the lower side of the heat sink (9), a first conducting layer is arranged on the upper surface of the first insulating layer (7), a first chip (1) is arranged at the front end of the first conducting layer, a first insulating sheet (5) is arranged at the rear end of the first chip (1), and first conducting sheets (3) are arranged on the first chip (1) and the first insulating sheet (5);
the lower end of the second insulating layer (8) is provided with a second conducting layer, the front end of the second conducting layer is provided with a second chip (2), the rear end of the second chip (2) is provided with a second insulating sheet (6), and the second chip (2) and the second insulating sheet (6) are provided with second conducting sheets (4).
2. A semiconductor laser with an insulating heat sink as claimed in claim 1, wherein the first and second conductive layers are gold-plated ceramic structures, i.e. containing gold plating or plated with gold after copper plating.
3. A semiconductor laser with insulating heat sink according to claim 1, characterized in that the first chip (1) and the second chip (2) are soldered directly to the front end faces of the first conducting layer and the second conducting layer by means of solder.
4. A semiconductor laser with insulating heat sink according to claim 1, characterized in that the P-faces of the first chip (1) and the second chip (2) are arranged on the side close to the heat sink (9).
5. The semiconductor laser stacked array with the insulated heat sink is characterized by being formed by sequentially and vertically arranging at least three semiconductor lasers along the slow axis direction of the semiconductor lasers.
6. A horizontal array of semiconductor lasers with insulating heat sinks is characterized by being formed by sequentially and horizontally arranging at least three semiconductor lasers along the slow axis direction of the semiconductor lasers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911333527.5A CN111370991A (en) | 2019-12-23 | 2019-12-23 | Semiconductor laser, stacked array and horizontal array of insulating type heat sink |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911333527.5A CN111370991A (en) | 2019-12-23 | 2019-12-23 | Semiconductor laser, stacked array and horizontal array of insulating type heat sink |
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| CN111370991A true CN111370991A (en) | 2020-07-03 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112650374A (en) * | 2020-12-21 | 2021-04-13 | 无锡卡兰尼普热管理技术有限公司 | Cooling method and module for memory module in electronic system |
| CN113097165A (en) * | 2021-03-31 | 2021-07-09 | 度亘激光技术（苏州）有限公司 | Preparation method of semiconductor stacked array |
| CN115275767A (en) * | 2022-08-24 | 2022-11-01 | 中国科学院西安光学精密机械研究所 | High-power quasi-continuous bar chip |
| CN115832862A (en) * | 2023-02-17 | 2023-03-21 | 北京凯普林光电科技股份有限公司 | Semiconductor laser array and assembling method thereof |
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| CN115275767A (en) * | 2022-08-24 | 2022-11-01 | 中国科学院西安光学精密机械研究所 | High-power quasi-continuous bar chip |
| CN115832862A (en) * | 2023-02-17 | 2023-03-21 | 北京凯普林光电科技股份有限公司 | Semiconductor laser array and assembling method thereof |
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