CN111431480A - Thermovoltaic power generation chip - Google Patents
Thermovoltaic power generation chip Download PDFInfo
- Publication number
- CN111431480A CN111431480A CN202010395883.6A CN202010395883A CN111431480A CN 111431480 A CN111431480 A CN 111431480A CN 202010395883 A CN202010395883 A CN 202010395883A CN 111431480 A CN111431480 A CN 111431480A
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- conducting substrate
- insulating heat
- heat
- type semiconductor
- power generation
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- 238000010248 power generation Methods 0.000 title claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 116
- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- 239000002245 particle Substances 0.000 claims abstract description 48
- 238000005530 etching Methods 0.000 claims abstract description 28
- 239000007769 metal material Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052755 nonmetal Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 3
- 230000002349 favourable effect Effects 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 238000003466 welding Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 206010066054 Dysmorphism Diseases 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/36—Electrical components characterised by special electrical interconnection means between two or more PV modules, e.g. electrical module-to-module connection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
- H01L31/0525—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells including means to utilise heat energy directly associated with the PV cell, e.g. integrated Seebeck elements
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/34—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to the technical field of semiconductor devices, in particular to a thermovoltaic power generation chip. The novel high-power LED packaging structure comprises an upper insulating heat-conducting substrate, a lower insulating heat-conducting substrate, N-type and P-type semiconductor particles, etching circuits are etched on the inner side plate surfaces of the upper insulating heat-conducting substrate and the lower insulating heat-conducting substrate, the etching circuits can be in series connection or series-parallel connection, flow deflectors are arranged on the etching circuits of the upper insulating heat-conducting substrate and the lower insulating heat-conducting substrate, the N-type semiconductor particles and the P-type semiconductor particles are alternately arranged along the etching circuits, two ends of the N-type semiconductor particles and two ends of the P-type semiconductor particles are welded with the flow deflectors on two sides, two protruding structures are arranged on the. The problem of when current thermovoltaic power generation chip connects wire intertwine and occupy a large amount of equipment space is solved, the fault rate in the thermovoltaic power generation chip working process has been reduced by a wide margin, and the scale of the thermovoltaic power generation that still is favorable to expanding moreover. The invention is mainly applied to the large-scale aspect of thermovoltaic power generation.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a thermovoltaic power generation chip.
Background
The existing thermovoltaic power generation chip is usually in a regular shape, such as a square or a rectangle, and a circuit for connecting P/N semiconductor particles is embedded in two insulating heat conduction substrates. When the thermovoltaic power generation chip is actually used, the positive electrode and the negative electrode need to be led out in a mode of welding wires or welding electrodes, and the electrodes are usually metal sheets. There are many problems with this connection of the thermovoltaic power generation chips, for example: (1) a large amount of manpower resources and time are consumed for welding the conducting wires; (2) the welded lead is not firm enough and is easy to fall off, so that a large amount of chips are easily wasted, and even the whole thermovoltaic power generation system consisting of a plurality of thermovoltaic power generation chips fails; (3) when a large number of thermovoltaic power generation chips work in series or in parallel, a large number of wires are easy to be wound together and are inconvenient to connect; (4) the lead occupies a large space, so that the thermovoltaic power generation technology is not easy to realize scale; (5) automated assembly is not easily achieved. Meanwhile, the existing semiconductor power generation chip is lack of design for large-scale power generation, for example, Chinese patent 201320123155 discloses an automobile exhaust temperature difference power generation device and an automobile with the same, so that energy absorption of automobile exhaust is realized.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides the thermovoltaic power generation chip, the power generation chip provides a special-shaped insulating heat conduction substrate design with electrodes and without welding wires or electrodes, the thermovoltaic power generation chip with the electrodes facilitates the interconnection of the thermovoltaic power generation chips, can also be directly inserted into an output circuit, and solves the problem that the wires are mutually wound and occupy a large amount of equipment space when the existing thermovoltaic power generation chips are connected.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a thermovoltaic power generation chip comprises an upper insulating heat conduction substrate, a lower insulating heat conduction substrate, N-type semiconductor particles and P-type semiconductor particles, corresponding etching circuits are etched on the inner side plate surfaces of the upper insulating heat-conducting substrate and the lower insulating heat-conducting substrate, the etching circuits of the upper insulating heat-conducting substrate and the lower insulating heat-conducting substrate are both provided with flow deflectors discontinuously, the N-type semiconductor particles and the P-type semiconductor particles are alternately arranged along the etching circuit, one end of each of the N-type semiconductor particles and the P-type semiconductor particles is respectively welded on one of the guide plates, the other end of each of the N-type semiconductor particles and the P-type semiconductor particles is respectively welded on the other two guide plates, the lower insulating heat-conducting substrate is provided with a first heat-conducting substrate protruding structure and a second heat-conducting substrate protruding structure, the first heat conduction substrate protruding structure is provided with a positive electrode, and the second heat conduction substrate protruding structure is provided with a negative electrode.
The first heat-conducting substrate protruding structure and the second heat-conducting substrate protruding structure are arranged on the same side of the lower insulating heat-conducting substrate, the etching circuit is arranged into a series circuit, and the N-type semiconductor particles and the P-type semiconductor particles are connected through the flow deflector to form a series loop.
The first heat conduction substrate protruding structure and the second heat conduction substrate protruding structure are symmetrically arranged at two side edges of the lower insulation heat conduction substrate, the etching circuit is arranged into a parallel circuit, and the N-type semiconductor particles and the P-type semiconductor particles are connected through the flow deflectors to form a parallel loop.
And the etching circuit on the lower insulating heat-conducting substrate is connected with the positive electrode and the negative electrode.
And the surfaces of the outer side plate surfaces of the upper insulating heat-conducting substrate and the lower insulating heat-conducting substrate are provided with insulating heat-conducting non-metallic coatings.
The upper insulating heat-conducting substrate and the lower insulating heat-conducting substrate are made of metal materials.
The upper insulating heat-conducting substrate and the lower insulating heat-conducting substrate are made of aluminum materials or copper materials.
The upper insulating heat-conducting substrate and the lower insulating heat-conducting substrate are made of non-metallic materials.
The upper insulating heat-conducting substrate and the lower insulating heat-conducting substrate are made of ceramic materials.
Compared with the prior art, the invention has the beneficial effects that:
this power generation chip is from taking the electrode, need not weld the insulating heat conduction base plate design of dysmorphism of wire or electrode, makes things convenient for interconnect between the thermovoltaic power generation chip, also can disect insertion to output circuit, and the problem that the wire twined each other and occupied a large amount of equipment spaces when having solved current thermovoltaic power generation chip and connecting has reduced the fault rate in the thermovoltaic power generation chip course by a wide margin, but also is favorable to enlarging the scale of thermovoltaic power generation. Compared with a mode of welding electrodes or wires, the method is firmer, the process of manufacturing the thermovoltaic power generation chip is simpler, and the labor consumption and the working hours can be greatly reduced, so that the cost of the thermovoltaic power generation chip is greatly reduced, and the working reliability and the working stability of the thermovoltaic power generation chip are greatly improved.
Drawings
FIG. 1 is a schematic diagram of a series-type thermovoltaic power generation chip of the present invention;
FIG. 2 is a schematic diagram of the internal structure of the series type thermovoltaic power generation chip according to the present invention;
FIG. 3 is a top view of the lower insulating and heat conducting substrate portion of FIG. 2;
FIG. 4 is a schematic diagram of the internal structure of the parallel type thermovoltaic power generation chip according to the present invention;
FIG. 5 is a top view of the lower insulating and heat conducting substrate portion of FIG. 4;
FIG. 6 is a side view of the present invention;
FIG. 7 is a side view of a portion of an upper insulated heat conducting substrate according to the present invention;
FIG. 8 is a side view of a portion of a lower insulated heat conducting substrate according to the present invention;
in the figure: the structure comprises an upper insulating heat-conducting substrate 1, a lower insulating heat-conducting substrate 2, an etching circuit 3, a flow deflector 4, an N-type semiconductor particle 5, a P-type semiconductor particle 6, a first heat-conducting substrate protruding structure 7, a second heat-conducting substrate protruding structure 8, a positive electrode 9, a negative electrode 10 and an insulating heat-conducting non-metal coating 11.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 to 8, a thermovoltaic power generation chip comprises an upper insulating and heat conducting substrate 1, a lower insulating and heat conducting substrate 2, N-type semiconductor particles 5 and P-type semiconductor particles 6, wherein corresponding etching circuits 3 are etched on the inner side surfaces of the upper insulating and heat conducting substrate 1 and the lower insulating and heat conducting substrate 2, the etching circuits 3 on the upper insulating and heat conducting substrate 1 and the lower insulating and heat conducting substrate 2 are correspondingly arranged, baffles 4 are discontinuously arranged on the etching circuits 3 on the upper insulating and heat conducting substrate 1 and the lower insulating and heat conducting substrate 2, the baffles 4 are welded and fixed with the etching circuits 3 along the lines of the etching circuits 3, the positions of the baffles 4 on the upper insulating and heat conducting substrate 1 and the lower insulating and heat conducting substrate 2 are staggered, the N-type semiconductor particles 5 and the P-type semiconductor particles 6 are alternately arranged along the etching circuits 3, the N-type semiconductor particles 5 and the P-type semiconductor particles 6 are arranged in parallel, one end of each of the N-type semiconductor particles 5 and the P-type semiconductor particles 6 is welded on one of the current deflectors 4, the N-type semiconductor particles 5 and the P-type semiconductor particles 6 are welded at two ends of the same current deflector 4, the other end of each of the N-type semiconductor particles 5 and the P-type semiconductor particles 6 is welded on the other two current deflectors 4, a first heat-conducting substrate protruding structure 7 and a second heat-conducting substrate protruding structure 8 are arranged on the lower insulating heat-conducting substrate 2, a positive electrode 9 is arranged on the first heat-conducting substrate protruding structure 7, a negative electrode 10 is arranged on the second heat-conducting substrate protruding structure 8, and the etching circuit 3 extends to be electrically connected with the positive electrode 9 and the negative electrode 10. The upper insulating heat-conducting substrate 1 and the lower insulating heat-conducting substrate 2 have temperature difference, the generated voltage is in direct proportion to the temperature difference by utilizing the Seebeck effect, and the thermovoltaic power generation chip connects a plurality of power generation chips into a whole through the positive electrode 9 on the first heat-conducting substrate 7 and the negative electrode 10 on the second heat-conducting substrate 8, and also can be directly connected to an output circuit for thermovoltaic power generation, so that the conversion efficiency is obviously improved.
Preferably, the first heat conducting substrate protruding structures 7 and the second heat conducting substrate protruding structures 8 are disposed on the same side of the lower insulating heat conducting substrate 2, the first heat conducting substrate protruding structures 7 and the second heat conducting substrate protruding structures 8 are the same in size and disposed on the left side and the right side of the same side of the lower insulating substrate 2, the etching circuits 3 are disposed as a series circuit, and the N-type semiconductor particles 5 and the P-type semiconductor particles 6 are connected through the flow deflectors 4 to form a series circuit.
Preferably, the first heat conducting substrate protruding structures 7 and the second heat conducting substrate protruding structures 8 are symmetrically arranged at two side edges of the lower insulating heat conducting substrate 2, the first heat conducting substrate protruding structures 7 and the second heat conducting substrate protruding structures 8 are the same in size and are arranged at two parallel side edges of the lower insulating heat conducting substrate 2, the etching circuit 3 is arranged to be a parallel circuit, and the N-type semiconductor particles 5 and the P-type semiconductor particles 6 are connected through the flow deflectors 4 to form a parallel loop or a series-parallel loop.
Preferably, the etching circuit 3 on the lower insulating heat conducting substrate 2 is connected with the positive electrode 9 and the negative electrode 10, and the etching circuit 3 extends to the first heat conducting substrate protruding structure 7 and the second heat conducting substrate protruding structure 8 and is electrically connected with the positive electrode 9 and the negative electrode 10.
Preferably, the insulating and heat conducting non-metallic coating 11 is arranged on the surface of the outer side plate surface of the upper insulating and heat conducting substrate 1 and the lower insulating and heat conducting substrate 2, and the insulating and heat conducting non-metallic coating 11 is made of a material with a high heat conductivity coefficient, such as common ceramics, nano ceramics and the like.
Preferably, the upper insulating and heat conducting substrate 1 and the lower insulating and heat conducting substrate 2 are made of metal materials with high heat conductivity coefficients.
Preferably, the upper insulating and heat conducting substrate 1 and the lower insulating and heat conducting substrate 2 are made of metal materials with high heat conductivity coefficient, such as aluminum or copper.
Preferably, the upper insulating and heat conducting substrate 1 and the lower insulating and heat conducting substrate 2 are made of non-metallic materials with high heat conductivity coefficients.
Preferably, the upper insulating and heat conducting substrate 1 and the lower insulating and heat conducting substrate 2 are made of ceramic materials or other non-metallic materials with high heat conductivity and proper strength.
Although only the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit of the present invention within the knowledge of those skilled in the art, and all changes are encompassed in the scope of the present invention.
Claims (9)
1. A thermovoltaic power generation chip is characterized in that: the novel LED lamp is characterized by comprising an upper insulating heat-conducting substrate (1), a lower insulating heat-conducting substrate (2), N-type semiconductor particles (5) and P-type semiconductor particles (6), wherein corresponding etching circuits (3) are etched on the inner side surfaces of the upper insulating heat-conducting substrate (1) and the lower insulating heat-conducting substrate (2), flow deflectors (4) are discontinuously arranged on the etching circuits (3) of the upper insulating heat-conducting substrate (1) and the lower insulating heat-conducting substrate (2), the N-type semiconductor particles (5) and the P-type semiconductor particles (6) are alternately arranged along the etching circuits (3), one ends of the N-type semiconductor particles (5) and the P-type semiconductor particles (6) are respectively welded on one flow deflector (4), the other ends of the N-type semiconductor particles (5) and the P-type semiconductor particles (6) are respectively welded on the other two flow deflectors (4), and a first heat-conducting substrate protruding structure (7) and a second heat-conducting substrate protruding structure are arranged on the lower insulating heat-conducting substrate (2) And the structure (8) is formed, a positive electrode (9) is arranged on the first heat-conducting substrate protruding structure (7), and a negative electrode (10) is arranged on the second heat-conducting substrate protruding structure (8).
2. The thermovoltaic power generation chip according to claim 1, wherein: the first heat-conducting substrate protruding structure (7) and the second heat-conducting substrate protruding structure (8) are arranged on the same side of the lower insulating heat-conducting substrate (2), the etching circuit (3) is arranged to be a series circuit, and the N-type semiconductor particles (5) and the P-type semiconductor particles (6) are connected through the flow deflector (4) to form a series circuit.
3. The thermovoltaic power generation chip according to claim 1, wherein: the first heat-conducting substrate protruding structure (7) and the second heat-conducting substrate protruding structure (8) are symmetrically arranged at two side positions of the lower insulating heat-conducting substrate (2), the etching circuit (3) is arranged into a parallel circuit, and the N-type semiconductor particles (5) and the P-type semiconductor particles (6) are connected through the flow deflectors (4) to form a parallel loop.
4. The thermovoltaic power generation chip according to claim 1, wherein: and the etching circuit (3) on the lower insulating heat-conducting substrate (2) is connected with the positive electrode (9) and the negative electrode (10).
5. The thermovoltaic power generation chip according to claim 1, wherein: and the surfaces of the outer side plates of the upper insulating heat-conducting substrate (1) and the lower insulating heat-conducting substrate (2) are provided with insulating heat-conducting non-metallic coatings (11).
6. The thermovoltaic power generation chip according to claim 1, wherein: the upper insulating heat-conducting substrate (1) and the lower insulating heat-conducting substrate (2) are made of metal materials.
7. The thermovoltaic power generation chip according to claim 6, wherein: the upper insulating heat-conducting substrate (1) and the lower insulating heat-conducting substrate (2) are made of aluminum materials or copper materials.
8. The thermovoltaic power generation chip according to claim 1, wherein: the upper insulating heat-conducting substrate (1) and the lower insulating heat-conducting substrate (2) are made of non-metal materials.
9. The thermovoltaic power generation chip according to claim 8, wherein: the upper insulating heat-conducting substrate (1) and the lower insulating heat-conducting substrate (2) are made of ceramic materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010395883.6A CN111431480A (en) | 2020-05-12 | 2020-05-12 | Thermovoltaic power generation chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010395883.6A CN111431480A (en) | 2020-05-12 | 2020-05-12 | Thermovoltaic power generation chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111431480A true CN111431480A (en) | 2020-07-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010395883.6A Pending CN111431480A (en) | 2020-05-12 | 2020-05-12 | Thermovoltaic power generation chip |
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| Country | Link |
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| CN (1) | CN111431480A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112902538A (en) * | 2021-03-26 | 2021-06-04 | 江苏芷泉能源科技有限公司 | Multifunctional thermovoltaic refrigeration refrigerator |
-
2020
- 2020-05-12 CN CN202010395883.6A patent/CN111431480A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112902538A (en) * | 2021-03-26 | 2021-06-04 | 江苏芷泉能源科技有限公司 | Multifunctional thermovoltaic refrigeration refrigerator |
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