CN202120903U - Half-bridge power module - Google Patents
Half-bridge power module Download PDFInfo
- Publication number
- CN202120903U CN202120903U CN2011201674075U CN201120167407U CN202120903U CN 202120903 U CN202120903 U CN 202120903U CN 2011201674075 U CN2011201674075 U CN 2011201674075U CN 201120167407 U CN201120167407 U CN 201120167407U CN 202120903 U CN202120903 U CN 202120903U
- Authority
- CN
- China
- Prior art keywords
- power terminal
- power
- bridge
- pin
- insulated substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 67
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000017525 heat dissipation Effects 0.000 abstract 2
- 238000005516 engineering process Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Power Conversion In General (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011201674075U CN202120903U (en) | 2011-05-24 | 2011-05-24 | Half-bridge power module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011201674075U CN202120903U (en) | 2011-05-24 | 2011-05-24 | Half-bridge power module |
Publications (1)
Publication Number | Publication Date |
---|---|
CN202120903U true CN202120903U (en) | 2012-01-18 |
Family
ID=45461944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011201674075U Expired - Lifetime CN202120903U (en) | 2011-05-24 | 2011-05-24 | Half-bridge power module |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN202120903U (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102208403A (en) * | 2011-05-24 | 2011-10-05 | 嘉兴斯达半导体有限公司 | Half-bridge power module |
CN103780066A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Four-quadrant insulated gate bipolar transistor module |
CN103779341A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | High-power half-bridge module |
-
2011
- 2011-05-24 CN CN2011201674075U patent/CN202120903U/en not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102208403A (en) * | 2011-05-24 | 2011-10-05 | 嘉兴斯达半导体有限公司 | Half-bridge power module |
CN103780066A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Four-quadrant insulated gate bipolar transistor module |
CN103779341A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | High-power half-bridge module |
CN103779341B (en) * | 2014-01-24 | 2016-07-27 | 嘉兴斯达微电子有限公司 | A kind of high-power half bridge module |
CN103780066B (en) * | 2014-01-24 | 2017-05-03 | 嘉兴斯达微电子有限公司 | Four-quadrant insulated gate bipolar transistor module |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: Jiaxing City, Zhejiang province 314000 Nanhu District Branch Road No. 988 (Jiaxing city) Patentee after: STARPOWER SEMICONDUCTOR LTD. Address before: Central South Road Furun Nanhu District of Jiaxing city of Zhejiang Province east three layer 314000 Patentee before: Starpower Semiconductor Ltd. |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Half-bridge power module Effective date of registration: 20151209 Granted publication date: 20120118 Pledgee: Agricultural Bank of China Limited by Share Ltd Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2015990001099 |
|
PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20161212 Granted publication date: 20120118 Pledgee: Agricultural Bank of China Limited by Share Ltd Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2015990001099 |
|
PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Half-bridge power module Effective date of registration: 20161216 Granted publication date: 20120118 Pledgee: Agricultural Bank of China Limited by Share Ltd Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2016330000098 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20180904 Granted publication date: 20120118 Pledgee: Agricultural Bank of China Limited by Share Ltd Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2016330000098 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20120118 |