CN103779343A - Power semiconductor module - Google Patents
Power semiconductor module Download PDFInfo
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- CN103779343A CN103779343A CN201410034085.5A CN201410034085A CN103779343A CN 103779343 A CN103779343 A CN 103779343A CN 201410034085 A CN201410034085 A CN 201410034085A CN 103779343 A CN103779343 A CN 103779343A
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- Prior art keywords
- power
- insulated substrate
- substrate
- power semiconductor
- semiconductor modular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
A power semiconductor module at least comprises two insulating substrates connected to the upper surface of a heat dissipation substrate. Each insulating substrate is connected with power terminals and signal terminals. Every three power terminals form a parallel half-bridge module so that the dynamic distribution of the current on each insulating substrate can be relatively symmetrical, one of the three power terminals is connected with an external bus, and the other two power terminals are a low potential power terminal and a high potential power terminal respectively and are connected to another bus. Power chips and diode are attached to each insulating substrate. The surfaces of the power chips and the surfaces of the diode chips are electrically connected with the insulating substrates through bonding aluminum wires. The power semiconductor module has the advantages of being high in power, high in efficiency, low in cost, high in reliability and the like.
Description
Technical field
The present invention relates to a kind of power semiconductor modular, especially a kind of high-power half bridge module, belongs to the module package technical field of electronic device.
Background technology
Power model IGBT (insulated gate bipolar transistor) module is widely used in the fields such as frequency converter, welding machine, UPS, solar energy and wind energy, in traditional high power module encapsulation, module is in order to reach high reliability, need reflow soldering power terminal, signal lead needs coiling, need to fill with epoxy resin, therefore have technique more complicated, the shortcoming such as production cost is higher.
Summary of the invention
The object of the invention is to overcome the deficiency that prior art exists, and the power semiconductor modular of a kind of high power, high efficiency, low cost, high reliability is provided.
The object of the invention is to complete by following technical solution, described power semiconductor modular, it at least comprises two insulated substrates that are connected to above heat-radiating substrate, on each insulated substrate, be connected with respectively power terminal and signal terminal, a parallel half-bridge module of every three power terminals composition; One of them power terminal connects an outside bus; Another two are respectively an electronegative potential and are connected another one bus with the power terminal of a high potential; On described insulated substrate 12, be bonded with respectively power chip 11 and diode chip for backlight unit 10, between the surface of power chip 11 and diode chip for backlight unit 9 and insulated substrate 12, be electrically connected with bonding aluminum steel.
The mode of described power terminal supersonic bonding is connected on each insulated substrate, and described signal terminal is connected to above described insulated substrate with ultrasonic wave or solder; Described power chip 11 and diode chip for backlight unit 10 by refluxing soft soldering connect, Diffusion Welding, a kind of bonding mode in silver powder crimping is connected on insulated substrate.
Described insulated substrate is by middle ceramic material layer and cover up and down copper layer and form, and wherein said ceramic material is Al2O3, ALN, at least one in Si3N4; Copper is covered in described both sides, between its thickness 0.1-0.3mm; On each insulated substrate, comprise an independent half-bridge circuit structure.
Described insulated substrate is bonded on the tabular heat-radiating substrate made from copper or AiSiC or CuSiC, and the thickness of described heat-radiating substrate is 3-5mm;
On described heat-radiating substrate, include six installing holes, every four installing holes pin an insulated substrate.
The present invention has the features such as high power, high efficiency, low cost, high reliability.
Accompanying drawing explanation
Fig. 1 is the structural representation of power semiconductor modular of the present invention.
Fig. 2 is the circuit topological structure figure of structure shown in corresponding diagram 1.
Embodiment
Below in conjunction with accompanying drawing, the present invention is done to detailed introduction: shown in Fig. 1, power semiconductor modular of the present invention, it at least comprises two and is connected to heat-radiating substrate 13 insulated substrate 12 above, on each insulated substrate 12, be connected with respectively power terminal 1,2,3 and signal terminal 5,6,7,8, a parallel half-bridge module of every three power terminals composition; One of them power terminal connects an outside bus; Another two are respectively an electronegative potential and are connected another one bus with the power terminal of a high potential; On described insulated substrate 12, be bonded with respectively power chip 11 and diode chip for backlight unit 10, between the surface of power chip 11 and diode chip for backlight unit 9 and insulated substrate 12, be electrically connected with bonding aluminum steel.
The mode of described power terminal 1,2,3 use supersonic bondings is connected on each insulated substrate 12, and described signal terminal 5,6,7,8 use ultrasonic waves or solder are connected to above described insulated substrate 12; Described power chip 11 and diode chip for backlight unit 10 by refluxing soft soldering connect, Diffusion Welding, a kind of bonding mode in silver powder crimping is connected on insulated substrate.
Described insulated substrate 12 is by middle ceramic material layer and cover up and down copper layer and form, and wherein said ceramic material is Al2O3, ALN, at least one in Si3N4; Copper is covered in described both sides, between its thickness 0.1-0.3mm; On each insulated substrate, comprise an independent half-bridge circuit structure.
Described insulated substrate 12 is bonded on the tabular heat-radiating substrate 13 made from copper or AiSiC or CuSiC, and the thickness of described heat-radiating substrate 13 is 3-5mm;
On described heat-radiating substrate 13, include six installing holes, every four installing holes pin an insulated substrate.
Embodiment: take Fig. 1 as example, first the present invention is bonded to power chip 11 and diode chip for backlight unit 10 on insulated substrate 12, and bonding mode can be that refluxing soft soldering connects, Diffusion Welding, silver powder crimping; Then between power chip 11, diode chip for backlight unit 9 surfaces and insulated substrate 12, be electrically connected with bonding aluminum steel; Again insulated substrate 12 is bonded on heat-radiating substrate 13, finally uses the mode of supersonic bonding respectively the pin 14,15,16,17 of power terminal 2,3 to be connected on each insulated substrate.Signal terminal 5,6,7,8 ultrasonic waves or solder are received above insulated substrate 9. and Fig. 2 is the circuit topological structure of corresponding diagram 1,19,20,21 difference presentation graphs 1 power terminals 1,2,3; 22,23,24,25 of Fig. 1 signal terminal 5,6,7,8 difference corresponding diagram 2.
Claims (5)
1. a power semiconductor modular, it at least comprises two insulated substrates that are connected to above heat-radiating substrate, it is characterized in that being connected with respectively power terminal and signal terminal on each insulated substrate, and every three power terminals form a parallel half-bridge module; One of them power terminal connects an outside bus; Another two are respectively an electronegative potential and are connected another one bus with the power terminal of a high potential; On described insulated substrate, be bonded with respectively power chip and diode chip for backlight unit, between the surface of power chip and diode chip for backlight unit and insulated substrate, be electrically connected with bonding aluminum steel.
2. power semiconductor modular according to claim 1, is characterized in that the mode of described power terminal supersonic bonding is connected on each insulated substrate, and described signal terminal is connected to above described insulated substrate with ultrasonic wave or solder; Described power chip and diode chip for backlight unit by refluxing soft soldering connect, Diffusion Welding, a kind of bonding mode in silver powder crimping is connected on insulated substrate.
3. power semiconductor modular according to claim 1 and 2, is characterized in that described insulated substrate by middle ceramic material layer and covers up and down copper layer forming, and wherein said ceramic material is Al2O3, ALN, at least one in Si3N4; Copper is covered in described both sides, between its thickness 0.1-0.3mm; On each insulated substrate, comprise an independent half-bridge circuit structure.
4. power semiconductor modular according to claim 3, is characterized in that described insulated substrate is bonded on the tabular heat-radiating substrate made from copper or AiSiC or CuSiC, and the thickness of described heat-radiating substrate is 3-5mm.
5. power semiconductor modular according to claim 4, is characterized in that including six installing holes on described heat-radiating substrate, and every four installing holes pin an insulated substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410034085.5A CN103779343A (en) | 2014-01-24 | 2014-01-24 | Power semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410034085.5A CN103779343A (en) | 2014-01-24 | 2014-01-24 | Power semiconductor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103779343A true CN103779343A (en) | 2014-05-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410034085.5A Pending CN103779343A (en) | 2014-01-24 | 2014-01-24 | Power semiconductor module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103779343A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895609A (en) * | 2016-05-03 | 2016-08-24 | 扬州国扬电子有限公司 | Power module for electrode package insulating layer |
| CN105931998A (en) * | 2016-06-17 | 2016-09-07 | 扬州国扬电子有限公司 | Insulating substrate structure and power module employing insulating substrate |
| CN107871734A (en) * | 2017-11-06 | 2018-04-03 | 中航（重庆）微电子有限公司 | A kind of IGBT module |
| CN110247220A (en) * | 2018-03-07 | 2019-09-17 | 台达电子工业股份有限公司 | Connector, connector production method and signal pins sub-assembly |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201508835U (en) * | 2009-04-02 | 2010-06-16 | 嘉兴斯达微电子有限公司 | Novel insulated gate bipolar transistor module with direct copper-clad base plate |
| CN102569271A (en) * | 2011-12-28 | 2012-07-11 | 嘉兴斯达微电子有限公司 | High-reliability high-power insulated gate bipolar transistor (IGBT) module |
| CN203746841U (en) * | 2014-01-24 | 2014-07-30 | 嘉兴斯达微电子有限公司 | Power semiconductor module |
-
2014
- 2014-01-24 CN CN201410034085.5A patent/CN103779343A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201508835U (en) * | 2009-04-02 | 2010-06-16 | 嘉兴斯达微电子有限公司 | Novel insulated gate bipolar transistor module with direct copper-clad base plate |
| CN102569271A (en) * | 2011-12-28 | 2012-07-11 | 嘉兴斯达微电子有限公司 | High-reliability high-power insulated gate bipolar transistor (IGBT) module |
| CN203746841U (en) * | 2014-01-24 | 2014-07-30 | 嘉兴斯达微电子有限公司 | Power semiconductor module |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895609A (en) * | 2016-05-03 | 2016-08-24 | 扬州国扬电子有限公司 | Power module for electrode package insulating layer |
| CN105895609B (en) * | 2016-05-03 | 2019-06-04 | 扬州国扬电子有限公司 | A kind of power module of electrode packet insulating layer |
| CN105931998A (en) * | 2016-06-17 | 2016-09-07 | 扬州国扬电子有限公司 | Insulating substrate structure and power module employing insulating substrate |
| CN105931998B (en) * | 2016-06-17 | 2018-07-20 | 扬州国扬电子有限公司 | A kind of insulating substrate structure and the power module using the substrate |
| CN107871734A (en) * | 2017-11-06 | 2018-04-03 | 中航（重庆）微电子有限公司 | A kind of IGBT module |
| CN110247220A (en) * | 2018-03-07 | 2019-09-17 | 台达电子工业股份有限公司 | Connector, connector production method and signal pins sub-assembly |
| US10784612B2 (en) | 2018-03-07 | 2020-09-22 | Delta Electronics, Inc. | Connector, method for manufacturing connector and signal pin assembly |
| CN110247220B (en) * | 2018-03-07 | 2020-12-18 | 台达电子工业股份有限公司 | Connector, connector manufacturing method and signal pin assembly |
| US11245214B2 (en) | 2018-03-07 | 2022-02-08 | Delta Electronics, Inc. | Connector, method for manufacturing connector and signal pin assembly |
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Application publication date: 20140507 |