CN107871734A - A kind of IGBT module - Google Patents
A kind of IGBT module Download PDFInfo
- Publication number
- CN107871734A CN107871734A CN201711079103.1A CN201711079103A CN107871734A CN 107871734 A CN107871734 A CN 107871734A CN 201711079103 A CN201711079103 A CN 201711079103A CN 107871734 A CN107871734 A CN 107871734A
- Authority
- CN
- China
- Prior art keywords
- chip
- copper
- igbt module
- power terminal
- clad plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
Abstract
The present invention relates to a kind of power semiconductor, more particularly to a kind of IGBT module.IGBT module includes；Ceramic copper-clad plate, circuit is etched with the layers of copper of ceramic copper-clad plate；First area, one first kind transistor chip and one second transistorlike chip are set, first kind transistor chip side sets one first power terminal, second transistorlike chip-side sets one second power terminal, and the first power terminal and the second power terminal are located at first kind transistor chip both sides；Second area, first kind transistor chip and the second transistorlike chip are provided with, first kind transistor chip side sets one the 3rd power terminal and one first signal terminal, and opposite side sets a secondary signal terminal.The stray inductance of stray inductance and IGBT raster data models in IGBT loops can be reduced by changing internal structure the invention provides a kind of IGBT module, avoids using lead, makes IGBT parasitic gate inductance controllable, while simplifies encapsulation flow, improves packaging efficiency.
Description
Technical field
The present invention relates to a kind of power semiconductor, more particularly to a kind of IGBT module.
Background technology
As Power Electronic Technique is applied to the high pressure high-power applications occasions such as power system more and more widely, electronics becomes
Handled voltage steeply rises stream device with current class in the course of the work, and high-power converter is to semiconductor switch device
Power grade require more and more higher.Insulated gate bipolar transistor has as a kind of new wholly-controled device and is better than it
The characteristic of his power electronic devices, IGBT power module are widely used in electronic power conversion device.
Circuit function is usually realized using half-bridge IGBT module in middle low power field.IGBT module is by internal IGBT cores
Piece, FRD chips and structural member composition, due to the design difference of internal circuit configuration, different encapsulating structures can usually introduce not
With the stray inductance of degree, cause testing the uncontrollable factor with circuit work in application process, when parasitic caused by encapsulation
The voltage stress of the increased chip of inductance can not be born by igbt chip, then can cause the failure at high proportion of application end.Current
IGBT module, as shown in figure 1, it is complicated, it is necessary to which a plurality of leads connects, and internal structure can cause stray inductance, influence
The using effect of IGBT module.
The content of the invention
The problem of existing for prior art, the invention provides a kind of IGBT module, by the envelope for changing IGBT module
Assembling structure, the stray inductance of IGBT module is reduced, avoid using lead, simplified encapsulation flow, improve packaging efficiency.
The present invention adopts the following technical scheme that：
A kind of IGBT module includes：
Ceramic copper-clad plate, circuit is etched with the layers of copper of the ceramic copper-clad plate；
First area, a first kind transistor chip and one second transistorlike chip, first transistorlike are set
Chip-side sets one first power terminal, and the second transistorlike chip-side sets one second power terminal, and described
First power terminal is located at the first kind transistor chip both sides with second power terminal；
Second area, it is provided with the first kind transistor chip and the second transistorlike chip, the first kind
Transistor chip side sets one the 3rd power terminal and one first signal terminal, the opposite side of the first kind transistor chip
One secondary signal terminal is set；
The first area, the first kind transistor chip and the second transistorlike chip respectively with described
The ceramic copper-clad plate connection in one region, first power terminal and the ceramic copper-clad plate of the first area connect
Connect, second power terminal is connected with the ceramic copper-clad plate of the second area；
The second area, the first kind transistor chip be connected with the second transistorlike chip, described
Two transistorlike chips are connected with the ceramic copper-clad plate of the first area, the 3rd power terminal and secondth area
The ceramic copper-clad plate connection in domain；
The first kind transistor chip and the second transistorlike chip are fixed on the ceramic copper-clad by solder
In the layers of copper of plate.
First power terminal, second power terminal, the 3rd power terminal, first signal terminal and
The secondary signal terminal is fixed on by solder in the layers of copper of the ceramic copper-clad plate.
Pass through aluminium wire between the first kind transistor chip, the second transistorlike chip and the ceramic copper-clad plate
It is attached.
The first kind transistor chip is insulated gate bipolar transistor chip.
The second transistorlike chip is fast recovery diode chip.
The IGBT module also includes：
Copper soleplate, it is rectangle structure, two equal-sized mounting holes is provided with the both ends of the copper soleplate；
Shell, is set around the edge of the copper soleplate, and the shell has been positioned vertically above the power terminal
Port.
The ceramic copper-clad plate is fixed on the copper soleplate by solder.
The enclosure interior carries out embedding by silica gel.
A support frame is set to be drawn from the housing respectively at first signal terminal and the secondary signal terminal.
Beneficial effects of the present invention are as follows：
The invention provides a kind of IGBT module by change internal structure can reduce stray inductance in IGBT loops and
The stray inductance of IGBT raster data models, avoid using lead, make IGBT parasitic gate inductance controllable, while simplify encapsulation flow,
Improve packaging efficiency.
Brief description of the drawings
Fig. 1 is the structural representation of IGBT module in the prior art；
Fig. 2 is a kind of plane structure chart of New IGBT module of the present invention；
Fig. 3 is a kind of side view of New IGBT module of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art obtained on the premise of creative work is not made it is all its
His embodiment, belongs to the scope of protection of the invention.
It should be noted that in the case where not conflicting, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, but not as limiting to the invention.
As shown in Fig. 2 a kind of IGBT module includes：
Ceramic copper-clad plate 2 is layers of copper is directly connected to the ultra-thin composite base plate to be formed with ceramic substrate using bonding technology, and one
As using layers of copper, ceramic insulating layer, lower layers of copper form three kinds of structures.Ceramic copper-clad plate 2 has good electrical insulation characteristic, and height is led
Thermal characteristics, good welding performance, mechanical stress are strong.The top layers of copper of ceramic copper-clad plate 2 is etched with circuit in the present invention, can so subtract
The use of few lead, so as to simplify the structure in IGBT module, convenient encapsulation.
First area 11, a first kind transistor chip 3 and one second transistorlike chip 8, the first transistorlike are set
The side of chip 3 sets one first power terminal 4-1, and the side of the second transistorlike chip 8 sets one second power terminal 4-2, and
First power terminal 4-1 and the second power terminal 4-2 is located at the both sides of first kind transistor chip 3.
Second area 12, it is provided with the transistorlike chip 8 of first kind transistor chip 3 and second, the first transistorlike core
The side of piece 3 sets one the 3rd power terminal 4-3 and one first signal terminal 7-1, and the opposite side of first kind transistor chip 3 is set
One secondary signal terminal 7-2.
First kind transistor chip 3 is insulated gate bipolar transistor chip.Second transistorlike chip 8 recovers two to be fast
Pole pipe chip.IGBT module is by insulated gate bipolar transistor chip (Insulated Gate Bipolar
Transistor, IGBT) chip 3 and fast recovery diode chip 8 (Functional Requirements Doc, FWD) chip
The modularized semiconductor product formed by the encapsulation of specific circuit bridge；IGBT module after encapsulation directly applies to frequency conversion
In the equipment such as device, UPS uninterrupted power sources.The extraction path of access path and each terminal of module between chip pole and pole is present
Stray inductance.When the electric current changed passes through conductive path, the electric current of change causes the magnetic flux through conductive path to become
Change, there is the law of electromagnetic induction to understand that the magnetic flux of change will induce electromotive force in conductive path.By Kirchhoff's second law
Analysis understands that the induced electromotive force adds the voltage stress of chip.The wherein partial circuit of the colelctor electrode of IBGT chips 3 and connection
Voltage difference between the circuit part of the emitter stage of igbt chip 3 is maximum.Rational internal chip structure can contract in IGBT module
Existing potential difference between small each circuit part, so as to reduce the generation of stray inductance.
First area 11, the first kind transistor chip 3 and the second transistorlike chip 8 respectively with described
The ceramic copper-clad plate 2 in one region 11 connects, and the first power terminal 4-1 and the ceramics of the first area 11 cover
Copper coin 2 is connected, and the second power terminal 4-2 is connected with the ceramic copper-clad plate 2 of the second area 12.
Second area 12, the first kind transistor chip 3 be connected with the second transistorlike chip 8, described
Two transistorlike chips 8 are connected with the ceramic copper-clad plate 2 of the first area 11, the 3rd power terminal 4-3 and institute
The ceramic copper-clad plate 2 for stating second area 12 connects.First kind transistor chip 3, the second transistorlike chip 8 and ceramics cover
It is attached between copper coin 2 by aluminium wire 9.
Igbt chip 3 needs to make contact conductor completion connection with FRD chips 8 at present.High-power IBGT modules are generally adopted
With ultrasonic bond method extraction electrode binding line, the connection established between chip.Ultrasonic bond is to utilize ultrasound machinery at normal temperatures
Vibration spreads the molecule between lead and metal, so as to realize the connection of lead and chip bonding pad and circuit.In the present invention
Structure avoids and multilead was used in old-fashioned IGBT module, simplifies the structure of IGBT module so that encapsulation process is simpler.
First kind transistor chip 3 and the second transistorlike chip 8 are fixed on the ceramic copper-clad plate 2 by solder
Layers of copper on.First power terminal 4-1, the second power terminal 4-2, the 3rd power terminal 4-2, first signal
Terminal 7-1 and the secondary signal terminal 7-2 are fixed on by solder in the layers of copper of the ceramic copper-clad plate 2.Institute's ceramic copper-clad
Plate 2 is fixed on copper soleplate 1 by solder.Bonding area is big, it is ensured that device is stably fixed on device.The quality of welding simultaneously
The current capacity and heat dispersion of power model are directly affected, thereby it is ensured that the effectively welding of each part is for module normal use
It is particularly significant.
As shown in figure 3, IGBT module also includes：
Copper soleplate 1, it is rectangle structure, two equal-sized mounting holes is provided with the both ends of copper soleplate and are used, Yu Gu
Determine device.
Shell 10, set around the edge of the copper soleplate 1, for encapsulating whole IGBT module.Shell is in power terminal 4
It has been positioned vertically above port.
, it is necessary to be filled between the part that voltage difference inside housing 10 be present with silica gel after inside modules connection is completed
Seal, inside and outside isolation, it is ensured that the requirement of electric insulation when module works.Meanwhile silica gel chemical property is stable, water repellency
It is excellent, can play it is dust-proof, moistureproof, prevent chip and circuit by machinery, chemical hazard protective effect.
A support frame 6 is set to be drawn from housing at first signal terminal 7-1 and secondary signal terminal 7-2 respectively, branch is erected
The effect fixed to support.
Preferred embodiments of the present invention are the foregoing is only, not thereby limit embodiments of the present invention and protection model
Enclose, to those skilled in the art, should can appreciate that all with made by description of the invention and diagramatic content
Scheme obtained by equivalent substitution and obvious change, should be included in protection scope of the present invention.
Claims (10)
- A kind of 1. IGBT module, it is characterised in that：Including：Ceramic copper-clad plate, circuit is etched with the layers of copper of the ceramic copper-clad plate；First area, a first kind transistor chip and one second transistorlike chip, the first kind transistor chip are set Side sets one first power terminal, and the second transistorlike chip-side sets one second power terminal, and described first Power terminal is located at the first kind transistor chip both sides with second power terminal；Second area, it is provided with the first kind transistor chip and the second transistorlike chip, first crystalloid Die side sets one the 3rd power terminal and one first signal terminal, and the opposite side of the first kind transistor chip is set One secondary signal terminal；The first area, the first kind transistor chip and the second transistorlike chip respectively with firstth area The ceramic copper-clad plate connection in domain, first power terminal are connected with the ceramic copper-clad plate of the first area, institute The second power terminal is stated to be connected with the ceramic copper-clad plate of the second area；The second area, the first kind transistor chip be connected with the second transistorlike chip, second class Transistor chip is connected with the ceramic copper-clad plate of the first area, the 3rd power terminal and the second area The ceramic copper-clad plate connection.
- 2. IGBT module according to claim 1, it is characterised in that：The first kind transistor chip and second class Transistor chip is fixed on by solder in the layers of copper of the ceramic copper-clad plate.
- 3. IGBT module according to claim 1, it is characterised in that：First power terminal, second power end Sub, described 3rd power terminal, first signal terminal and the secondary signal terminal are fixed on the ceramics by solder In the layers of copper of copper-clad plate.
- 4. IGBT module according to claim 1, it is characterised in that：The first kind transistor chip, second class It is attached between transistor chip and the ceramic copper-clad plate by aluminium wire.
- 5. IGBT module according to claim 1, it is characterised in that：The first kind transistor chip is insulated gate bipolar Transistor npn npn chip.
- 6. IGBT module according to claim 1, it is characterised in that：The second transistorlike chip recovers two poles to be fast Die.
- 7. IGBT module according to claim 1, it is characterised in that：The IGBT module also wraps Include：Copper soleplate, it is rectangle structure, two equal-sized mounting holes is provided with the both ends of the copper soleplate；Shell, is set around the edge of the copper soleplate, and the shell has been positioned vertically above port the power terminal.
- 8. IGBT module according to claim 7, it is characterised in that：The ceramic copper-clad plate is fixed on described by solder On copper soleplate.
- 9. IGBT module according to claim 7, it is characterised in that：The enclosure interior carries out embedding by silica gel.
- 10. IGBT module according to claim 1, it is characterised in that：First signal terminal and the secondary signal A support frame is set to be drawn from the housing respectively at terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711079103.1A CN107871734A (en) | 2017-11-06 | 2017-11-06 | A kind of IGBT module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711079103.1A CN107871734A (en) | 2017-11-06 | 2017-11-06 | A kind of IGBT module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107871734A true CN107871734A (en) | 2018-04-03 |
Family
ID=61752755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711079103.1A Pending CN107871734A (en) | 2017-11-06 | 2017-11-06 | A kind of IGBT module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107871734A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109994439A (en) * | 2019-05-06 | 2019-07-09 | 合肥中恒微半导体有限公司 | A kind of IGBT module and its packaging technology of high-temperature resistant degree circulation |
| CN110010579A (en) * | 2019-05-06 | 2019-07-12 | 合肥中恒微半导体有限公司 | A kind of signal terminal built-in power semiconductor module and its packaging technology |
| CN110634818A (en) * | 2019-09-25 | 2019-12-31 | 湖南大学 | Packaging structure of hybrid power module composed of IGBT and MOSFET |
| CN114754493A (en) * | 2020-12-25 | 2022-07-15 | 杭州泰昕微电子有限公司 | Induction heating integrated core of instant water treatment device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101667562A (en) * | 2009-09-10 | 2010-03-10 | 嘉兴斯达微电子有限公司 | Novel power module for directly bonding power terminal |
| CN102064158A (en) * | 2010-11-04 | 2011-05-18 | 嘉兴斯达微电子有限公司 | Compact power module |
| CN103779343A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Power semiconductor module |
-
2017
- 2017-11-06 CN CN201711079103.1A patent/CN107871734A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101667562A (en) * | 2009-09-10 | 2010-03-10 | 嘉兴斯达微电子有限公司 | Novel power module for directly bonding power terminal |
| CN102064158A (en) * | 2010-11-04 | 2011-05-18 | 嘉兴斯达微电子有限公司 | Compact power module |
| CN103779343A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Power semiconductor module |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109994439A (en) * | 2019-05-06 | 2019-07-09 | 合肥中恒微半导体有限公司 | A kind of IGBT module and its packaging technology of high-temperature resistant degree circulation |
| CN110010579A (en) * | 2019-05-06 | 2019-07-12 | 合肥中恒微半导体有限公司 | A kind of signal terminal built-in power semiconductor module and its packaging technology |
| CN110010579B (en) * | 2019-05-06 | 2024-03-22 | 合肥中恒微半导体有限公司 | Signal terminal embedded power semiconductor module and packaging process thereof |
| CN109994439B (en) * | 2019-05-06 | 2024-03-22 | 合肥中恒微半导体有限公司 | IGBT module with high temperature cycle resistance and packaging technology thereof |
| CN110634818A (en) * | 2019-09-25 | 2019-12-31 | 湖南大学 | Packaging structure of hybrid power module composed of IGBT and MOSFET |
| CN114754493A (en) * | 2020-12-25 | 2022-07-15 | 杭州泰昕微电子有限公司 | Induction heating integrated core of instant water treatment device |
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| PB01 | Publication | ||
| PB01 | Publication | ||
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| CB02 | Change of applicant information |
Address after: 401331 No. 25 Xiyong Avenue, Shapingba District, Chongqing Applicant after: Huarun Microelectronics (Chongqing) Co., Ltd. Address before: 401331 No. 25 Xiyong Avenue, Shapingba District, Chongqing Applicant before: China Aviation (Chongqing) Microelectronics Co., Ltd. |
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| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180403 |
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| RJ01 | Rejection of invention patent application after publication |