CN110010579B - Signal terminal embedded power semiconductor module and packaging process thereof - Google Patents
Signal terminal embedded power semiconductor module and packaging process thereof Download PDFInfo
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- CN110010579B CN110010579B CN201910372361.1A CN201910372361A CN110010579B CN 110010579 B CN110010579 B CN 110010579B CN 201910372361 A CN201910372361 A CN 201910372361A CN 110010579 B CN110010579 B CN 110010579B
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- signal terminal
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000012858 packaging process Methods 0.000 title description 9
- 239000000919 ceramic Substances 0.000 claims abstract description 30
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052802 copper Inorganic materials 0.000 claims abstract description 18
- 239000010949 copper Substances 0.000 claims abstract description 18
- 230000017525 heat dissipation Effects 0.000 claims abstract description 15
- 238000001746 injection moulding Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000005452 bending Methods 0.000 claims abstract description 5
- 238000010297 mechanical methods and process Methods 0.000 claims abstract description 4
- 230000005226 mechanical processes and functions Effects 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 5
- 238000005269 aluminizing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
- H01L23/4926—Bases or plates or solder therefor characterised by the materials the materials containing semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a signal terminal embedded power semiconductor module, which comprises a heat dissipation copper plate, a ceramic copper-clad plate arranged on the heat dissipation copper plate, a power semiconductor chip attached to the ceramic copper-clad plate, a signal terminal and a power terminal connected with the ceramic copper-clad plate, and a shell, wherein the signal terminal and the power terminal are arranged on the ceramic copper-clad plate; the signal terminals are in injection molding fit in a mode of connecting two adjacent signal terminals in parallel, the signal terminals are integrated with the shell through an injection molding process, the lower ends of the signal terminals are connected with the ceramic copper-clad plate through a bonding process, and the upper ends of the signal terminals are connected with an external electrical system; the power terminal adopts a symmetrical branch structure, and two supporting legs are inwards recessed to form a certain radian; the signal terminal and the power terminal are formed through stamping and bending mechanical processes. The invention improves the practicability of the signal terminal of the power semiconductor module, improves the welding efficiency of the power terminal and the signal terminal, and simplifies the structure and the manufacturing process.
Description
Technical Field
The invention relates to the technical field of power semiconductor devices, in particular to a signal terminal embedded power semiconductor module and a packaging process thereof.
Background
Currently, power modules are widely used in power electronic circuits and semiconductor packages are commonly used. The power semiconductor packaging technology comprises the problems of material selection, structural design, process design, packaging process and the like, and a plurality of power chips are packaged into a module through checking calculation and relatively attractive and symmetrical layout. The packaging process needs to consider current balance of the device, heat dissipation of the chip, simplification of the process, and the like. The terminal bearing capacity of the existing high-power semiconductor device is required to be improved.
Disclosure of Invention
In view of the above problems, the present invention provides a signal terminal embedded power semiconductor module and a packaging process thereof, which improves the application universality and practicality of the power semiconductor module by increasing the bearing capacity of the terminal and optimizing the packaging process.
The invention provides a signal terminal embedded power semiconductor module, which comprises a heat dissipation copper plate, a ceramic copper-clad plate arranged on the heat dissipation copper plate, a power semiconductor chip attached to the ceramic copper-clad plate, a signal terminal and a power terminal connected with the ceramic copper-clad plate, and a shell, wherein the heat dissipation copper plate is arranged on the ceramic copper-clad plate; the signal terminals are in injection molding fit in a mode of connecting two adjacent signal terminals in parallel, the signal terminals are integrated with the shell through an injection molding process, the lower ends of the signal terminals are connected with the ceramic copper-clad plate through a bonding process, and the upper ends of the signal terminals are connected with an external electrical system; the power terminal adopts a symmetrical branch structure, and two supporting legs are inwards recessed to form a certain radian; the signal terminal and the power terminal are formed through stamping and bending mechanical processes.
Further, the signal terminal and the power terminal are made of copper materials, and the surfaces of the signal terminal and the power terminal are subjected to aluminizing, silver plating or nickel plating; the vertical plate is composed of a vertical plate and a bottom plate which are perpendicular to each other, wherein the height of the vertical plate is 25.3mm, and the length of the bottom plate is 10.3mm and the width of the bottom plate is 2mm.
Further, the power terminal consists of an inverted U-shaped main body and two side support legs, and the total height is 26.6mm; the width of the inverted U-shaped main body is 14mm, the distance between two sides is 20.4mm, and the width of the joint of the support leg and the ceramic copper-clad plate is 3.5mm.
Further, the shell comprises an outer shell and a plug, and the plug is plugged into a gap between two support legs of the power terminal.
The invention also protects a packaging process of the signal terminal embedded power semiconductor module, wherein two adjacent signal terminals are connected through a connecting bridge and then integrated with the shell through an injection molding process; after the injection molding process is completed, the connecting bridge is broken off from below the shell.
The method specifically comprises the following steps: s1: molding the signal terminal with the connecting bridge and the shell into a whole; s2: welding a power semiconductor chip and a power terminal on a ceramic copper-clad plate; s3: welding a ceramic copper-clad plate to a heat dissipation copper plate; s4: breaking off a connecting bridge at the bottom of a signal terminal which is integrally molded with the shell, welding the connecting bridge on the ceramic copper-clad plate through a bonding process, and adjusting the position relationship between the shell, the heat-dissipating copper plate and the power terminal; s5: and plugging in the plug block and fixing.
The invention has the beneficial effects that: the practicability of the signal terminal of the power semiconductor module is improved, the welding efficiency of the power terminal and the signal terminal is improved, and the structure and the manufacturing process are simplified.
Drawings
FIG. 1 is an exploded view of an IGBT module package;
fig. 2 is a schematic diagram of connection of a signal terminal and a ceramic copper-clad plate;
FIG. 3 is a diagram of parallel connection of adjacent signal terminals;
FIG. 4 is a schematic diagram of a power terminal structure;
fig. 5 is a block diagram of an IGBT module package.
Detailed Description
The invention will be described in further detail with reference to the drawings and the detailed description. The embodiments of the invention have been presented for purposes of illustration and description, and are not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated.
Example 1
As shown in fig. 1 and 2, the signal terminal embedded power semiconductor module comprises a heat dissipation copper plate 1, a ceramic copper-clad plate 2 arranged on the heat dissipation copper plate, a power semiconductor chip 3 attached on the ceramic copper-clad plate, four signal terminals 401-404 and three power terminals 501-503 connected with the ceramic copper-clad plate, and a shell; the shell comprises an outer shell 6 and a plug 7, and the plug 7 is plugged into a gap between two support legs of the power terminal; other electronic components, such as a diode 8, are welded on the ceramic copper-clad plate; the outer shell is fixedly connected with the heat dissipation copper plate through a lock catch 9. The signal terminal and the power terminal are made of copper materials, and the surfaces of the signal terminal and the power terminal are subjected to aluminizing, silver plating or nickel plating. The design of the chock makes the packaging be completed in a push-pull mode, so that the operation is more convenient, and the disassembly and the maintenance are convenient.
The signal terminals are injection-molded and matched in a parallel connection mode of two adjacent signal terminals, as shown in fig. 3, four signal terminals are divided into two groups, and each group of signal terminals is connected through a connecting bridge 10. The design can ensure the stability of the signal terminal structure and improve the injection molding quality when the signal terminal and the shell are injection molded. The signal terminals connected through the connecting bridge are integrated with the shell through an injection molding process, the lower ends of the signal terminals are connected with the ceramic copper-clad plate through a bonding process, and the upper ends of the signal terminals are connected with an external electrical system.
Specifically, the signal terminal comprises a vertical plate and a bottom plate which are perpendicular to each other, wherein the height of the vertical plate is 25.3mm, and the length of the bottom plate is 10.3mm and the width of the bottom plate is 2mm.
The power terminal adopts a symmetrical branch structure, as shown in fig. 4, the structural stability is improved, the current transmission is more uniform, the current passing capacity of the power terminal is improved, the parasitic resistance caused by the connection of the chip and the outside is reduced, and the heat dissipation capacity of the module passing through the terminal can be improved; the two supporting legs are inwards recessed to form a certain radian, so that the stability of the power terminal is improved, the stress of the module in practical application is reduced, and the application reliability of the module is further improved.
Specifically, the power terminal consists of an inverted U-shaped main body and two side support legs, and the total height is 26.6mm; the width of the inverted U-shaped main body is 14mm, the distance between two sides is 20.4mm, and the width of the joint of the support leg and the ceramic copper-clad plate is 3.5mm.
The signal terminal and the power terminal are formed through stamping and bending mechanical processes, so that the bending process is avoided, the process efficiency of terminal welding is improved, the shell is directly installed after the process is finished, and the module production process is simplified.
Example 2
A packaging process of a signal terminal embedded power semiconductor module comprises the steps that two adjacent signal terminals are connected through a connecting bridge and then integrated with a shell through an injection molding process; after the injection molding process is finished, breaking off the connecting bridge from the lower part of the shell;
the method specifically comprises the following steps:
s1: molding the signal terminal with the connecting bridge and the shell into a whole;
s2: welding a power semiconductor chip and a power terminal on a ceramic copper-clad plate;
s3: welding a ceramic copper-clad plate to a heat dissipation copper plate;
s4: breaking off a connecting bridge at the bottom of a signal terminal which is integrally molded with the shell, welding the connecting bridge on the ceramic copper-clad plate through a bonding process, and adjusting the position relationship between the shell, the heat-dissipating copper plate and the power terminal;
s5: and plugging in the plug block and fixing.
The package completion diagram is shown in fig. 5.
It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art and which are included in the embodiments of the present invention without the inventive step, are intended to be within the scope of the present invention.
Claims (4)
1. The signal terminal embedded power semiconductor module comprises a heat dissipation copper plate, a ceramic copper-clad plate arranged on the heat dissipation copper plate, a power semiconductor chip attached on the ceramic copper-clad plate, a signal terminal and a power terminal connected with the ceramic copper-clad plate, and a shell, and is characterized in that,
the signal terminals are in injection molding fit in a mode of connecting two adjacent signal terminals in parallel, the signal terminals are integrated with the shell through an injection molding process, the lower ends of the signal terminals are connected with the ceramic copper-clad plate through a bonding process, and the upper ends of the signal terminals are connected with an external electrical system;
the power terminal adopts a symmetrical branch structure, and two supporting legs are inwards recessed to form a certain radian; the signal terminal and the power terminal are formed through stamping and bending mechanical processes;
the shell comprises an outer shell and a plug, and the plug is plugged into a gap between two support legs of the power terminal;
two adjacent signal terminals are connected through a connecting bridge and then integrated with the shell through an injection molding process; after the injection molding process is finished, the connecting bridge is broken off from the lower part of the shell, and is welded on the ceramic copper-clad plate through the bonding process, meanwhile, the position relation among the shell, the heat dissipation copper plate and the power terminal is adjusted, and then the plug block is plugged and fixed.
2. The signal terminal embedded power semiconductor module according to claim 1, wherein the signal terminal and the power terminal are made of copper material, and a surface is subjected to aluminum plating, silver plating, or nickel plating.
3. The signal terminal embedded power semiconductor module according to claim 2, wherein the signal terminal is composed of a vertical plate and a bottom plate which are perpendicular to each other, the vertical plate is 25.3mm in height, and the bottom plate is 10.3mm in length and 2mm in width.
4. The signal terminal embedded power semiconductor module of claim 1, wherein the power terminal is composed of an inverted U-shaped body and two side legs, the total height being 26.6mm; the width of the inverted U-shaped main body is 14mm, the distance between two sides is 20.4mm, and the width of the joint of the support leg and the ceramic copper-clad plate is 3.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910372361.1A CN110010579B (en) | 2019-05-06 | 2019-05-06 | Signal terminal embedded power semiconductor module and packaging process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910372361.1A CN110010579B (en) | 2019-05-06 | 2019-05-06 | Signal terminal embedded power semiconductor module and packaging process thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110010579A CN110010579A (en) | 2019-07-12 |
| CN110010579B true CN110010579B (en) | 2024-03-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910372361.1A Active CN110010579B (en) | 2019-05-06 | 2019-05-06 | Signal terminal embedded power semiconductor module and packaging process thereof |
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| Country | Link |
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| CN (1) | CN110010579B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111863789B (en) * | 2020-06-22 | 2022-04-29 | 扬州国扬电子有限公司 | Low inductance power module |
| CN112670276A (en) * | 2020-12-24 | 2021-04-16 | 芯长征微电子制造(山东)有限公司 | IGBT module of high-efficient encapsulation |
| CN116544205A (en) * | 2023-06-27 | 2023-08-04 | 合肥中恒微半导体有限公司 | Integrated power semiconductor module |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203503643U (en) * | 2013-08-27 | 2014-03-26 | 南京银茂微电子制造有限公司 | Power module free of bending of power terminals |
| CN104779247A (en) * | 2014-01-13 | 2015-07-15 | 阿尔特拉公司 | Module having mirror-symmetric terminals and methods of forming the same |
| CN205004327U (en) * | 2015-09-22 | 2016-01-27 | 淄博美林电子有限公司 | 62mmIGBT module |
| CN107786096A (en) * | 2016-08-30 | 2018-03-09 | 天津瑞能电气有限公司 | A kind of wind-power electricity generation frequency conversion device power model IGBT startup heating arrangement |
| CN107871734A (en) * | 2017-11-06 | 2018-04-03 | 中航（重庆）微电子有限公司 | A kind of IGBT module |
| CN207602558U (en) * | 2017-12-22 | 2018-07-10 | 江苏宏微科技股份有限公司 | A kind of grafting power module package device |
| CN209804647U (en) * | 2019-05-06 | 2019-12-17 | 合肥中恒微半导体有限公司 | Signal terminal embedded power semiconductor module |
-
2019
- 2019-05-06 CN CN201910372361.1A patent/CN110010579B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203503643U (en) * | 2013-08-27 | 2014-03-26 | 南京银茂微电子制造有限公司 | Power module free of bending of power terminals |
| CN104779247A (en) * | 2014-01-13 | 2015-07-15 | 阿尔特拉公司 | Module having mirror-symmetric terminals and methods of forming the same |
| CN205004327U (en) * | 2015-09-22 | 2016-01-27 | 淄博美林电子有限公司 | 62mmIGBT module |
| CN107786096A (en) * | 2016-08-30 | 2018-03-09 | 天津瑞能电气有限公司 | A kind of wind-power electricity generation frequency conversion device power model IGBT startup heating arrangement |
| CN107871734A (en) * | 2017-11-06 | 2018-04-03 | 中航（重庆）微电子有限公司 | A kind of IGBT module |
| CN207602558U (en) * | 2017-12-22 | 2018-07-10 | 江苏宏微科技股份有限公司 | A kind of grafting power module package device |
| CN209804647U (en) * | 2019-05-06 | 2019-12-17 | 合肥中恒微半导体有限公司 | Signal terminal embedded power semiconductor module |
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| Publication number | Publication date |
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| CN110010579A (en) | 2019-07-12 |
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