CN112670276A - IGBT module of high-efficient encapsulation - Google Patents
IGBT module of high-efficient encapsulation Download PDFInfo
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- CN112670276A CN112670276A CN202011546565.1A CN202011546565A CN112670276A CN 112670276 A CN112670276 A CN 112670276A CN 202011546565 A CN202011546565 A CN 202011546565A CN 112670276 A CN112670276 A CN 112670276A
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- 239000000919 ceramic Substances 0.000 claims abstract description 97
- 238000003466 welding Methods 0.000 claims abstract description 89
- 238000004806 packaging method and process Methods 0.000 claims abstract description 29
- 230000003044 adaptive effect Effects 0.000 claims abstract description 11
- 229910000679 solder Inorganic materials 0.000 claims abstract description 6
- 238000011084 recovery Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 230000007704 transition Effects 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 238000005476 soldering Methods 0.000 description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 101100447171 Arabidopsis thaliana FRO2 gene Proteins 0.000 description 1
- 101150056585 DACT2 gene Proteins 0.000 description 1
- 101100386221 Danio rerio dact1 gene Proteins 0.000 description 1
- 101100120627 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FRD1 gene Proteins 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
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- 101150042015 frd.2 gene Proteins 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
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- 239000004033 plastic Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
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Abstract
The invention relates to an IGBT module packaged with high efficiency. The packaging bottom plate comprises a packaging bottom plate, a first module copper-clad ceramic plate arranged on the packaging bottom plate and a second module copper-clad ceramic plate arranged on the packaging bottom plate, wherein a first IGBT chip unit body is arranged on the first module copper-clad ceramic plate, and a second IGBT chip unit body is arranged on the second module copper-clad ceramic plate; the first IGBT chip unit body and the second IGBT chip unit body can be in adaptive connection with the power terminal group and the control terminal plate group on the packaging bottom plate so as to be connected into a required IGBT topological circuit; the power terminal group is in adaptive electric connection with the first copper-clad ceramic plate of the module and the second copper-clad ceramic plate of the module, and a power terminal body in the power terminal group is fixed with the first copper-clad ceramic plate of the module and/or the second copper-clad ceramic plate of the module through ultrasonic welding or soft solder welding. The invention has compact structure, adopts ultrasonic welding and can improve the production efficiency and quality of the IGBT module.
Description
Technical Field
The invention relates to an IGBT module, in particular to an IGBT module packaged with high efficiency.
Background
The IGBT module is a module product with standard size, and is widely applied to the fields of motor driving, induction heating, wind power generation, photovoltaic and the like due to the excellent switching performance of the IGBT module. The IGBT module is a product with relatively complex interior, and the manufacturing process is complicated. A commonly used IGBT module generally comprises three power terminals and four control terminals.
At present, the power terminals and the control terminals of the IGBT modules are assembled and connected by soldering, depending on the structures of the power terminals and the control terminals. Due to the characteristics of the soldering tin welding process, the power terminal can be influenced by heating when soldering tin is welded, so that the assembly of the module can be influenced by the problems of deformation, inclination and the like caused in the production process, and the production progress and reliability of the IGBT module are further influenced.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide the IGBT module with high efficiency in packaging, which has a compact structure and can improve the production efficiency and quality of the IGBT module by adopting ultrasonic welding.
According to the technical scheme provided by the invention, the high-efficiency packaged IGBT module comprises a packaging bottom plate, a first module copper-clad ceramic plate arranged on the packaging bottom plate and a second module copper-clad ceramic plate arranged on the packaging bottom plate, wherein a first IGBT chip unit body is arranged on the first module copper-clad ceramic plate, and a second IGBT chip unit body is arranged on the second module copper-clad ceramic plate; the first IGBT chip unit body and the second IGBT chip unit body can be in adaptive connection with the power terminal group and the control terminal plate group on the packaging bottom plate so as to be connected into a required IGBT topological circuit;
the power terminal group is in adaptive electric connection with the first copper-clad ceramic plate of the module and the second copper-clad ceramic plate of the module, and a power terminal body in the power terminal group is fixed with the first copper-clad ceramic plate of the module and/or the second copper-clad ceramic plate of the module through ultrasonic welding or through soft solder welding.
A control terminal copper-clad ceramic plate is arranged at one end part of the packaging bottom plate, a control terminal plate group is arranged on the control terminal copper-clad ceramic plate, and control terminal connecting plates in the control terminal plate group are mutually independent.
The control terminal plate group comprises a control terminal first connecting plate, a control terminal second connecting plate, a control terminal third connecting plate and a control terminal fourth connecting plate, the control terminal first connecting plate, the control terminal second connecting plate, the control terminal third connecting plate and the control terminal fourth connecting plate are vertically fixed on the control terminal copper-clad ceramic plate,
the first connecting plate of the control terminal, the second connecting plate of the control terminal, the third connecting plate of the control terminal and the fourth connecting plate of the control terminal are electrically connected with the first IGBT chip unit body and the second IGBT chip unit body through connecting bonding lead groups.
The power terminal group comprises a first power terminal body, a second power terminal body and a third power terminal body, and the first power terminal body, the second power terminal body and the third power terminal body are vertically distributed above the packaging bottom plate;
the first power terminal body is positioned on the first copper-clad ceramic plate of the module, the first plate body of the power terminal is connected with the collector terminal of the first IGBT chip in the first IGBT chip unit body and the cathode terminal of the first fast recovery diode chip, the second power terminal body stretches across the first copper-clad ceramic plate of the module and the second copper-clad ceramic plate of the module, and the second power terminal body is electrically connected with the emitter terminal of the first IGBT chip and the anode terminal of the first fast recovery diode chip; the third power terminal body is arranged on the second copper-clad ceramic plate of the module, and the third power terminal body is connected with the emitter end of the second IGBT chip in the second IGBT chip unit body and the cathode end of the second fast recovery diode chip.
The first power terminal body comprises a terminal top plate and terminal side plates arranged at two ends of the terminal top plate, one end of each terminal side plate is connected with the terminal top plate, and a terminal body connecting plate is arranged at the other end of each terminal side plate;
the terminal body connecting plate comprises a welding positioning part 17, the welding positioning part 17 is located on the outer sides of the terminal top plate and the terminal side plate, and the terminal body connecting plate can be fixed with the first copper-clad ceramic plate of the module through ultrasonic welding through the welding positioning part 17.
The terminal body connecting plate still includes the curb plate side connecting portion of being connected with terminal curb plate adaptation and is used for connecting curb plate side connecting portion and the middle transition portion of welding position portion 17, middle transition portion is the slope form, and welding position portion 17 is located the below of curb plate side connecting portion.
And a terminal side plate side lug is arranged on the side edge of the terminal side plate, and the terminal side plate side lug and the welding positioning part 17 are positioned on the same side of the terminal side plate.
The number of the first IGBT chips and the first fast recovery diode chips in the first IGBT chip unit body is 1: 1;
the number of the second IGBT chips and the number of the second fast recovery diode chips in the second IGBT chip unit body are 1: 1.
the connecting bonding lead group is prepared by an aluminum wire bonding process.
The first copper-clad ceramic plate of the module and the second copper-clad ceramic plate of the module are welded and fixed on the packaging bottom plate, bottom plate holes are formed in two ends of the packaging bottom plate, and the bottom plate holes are communicated with the packaging bottom plate.
The invention has the advantages that: the power terminal group comprises a first power terminal body, a second power terminal body and a third power terminal body; the first power terminal body, the second power terminal body are fixed on the first copper-clad ceramic plate of the module through ultrasonic welding or soldering, and the third power terminal body is fixed on the second copper-clad ceramic plate of the module through ultrasonic welding or soldering, and the problems of dust edge, tin overflow and the like during the existing soldering tin welding can be avoided when the third power terminal body is fixed through ultrasonic welding or soldering.
Drawings
Fig. 1 is a perspective view of the present invention.
FIG. 2 is a schematic view of a first copper-clad ceramic board of a module, a second copper-clad ceramic board of the module, and a control terminal copper-clad ceramic board of the invention on a package substrate.
Fig. 3 is a schematic diagram of a first power terminal body according to the present invention.
Fig. 4 is a schematic diagram of an IGBT topology circuit according to the present invention.
FIG. 5 is a schematic view of the present invention performing ultrasonic welding.
FIG. 6 is a schematic view of ultrasonic welding using a moving horn according to the present invention.
Description of reference numerals: 1-a first power terminal body, 2-a second power terminal body, 3-a third power terminal body, 4-a control terminal first connecting plate, 5-a control terminal second connecting plate, 6-a control terminal third connecting plate, 7-a control terminal fourth connecting plate, 8-a package base plate, 9-a control terminal copper-clad ceramic plate, 10-a module first copper-clad ceramic plate, 11-a module second copper-clad ceramic plate, 12-bottom plate hole, 13-moving welding head, 14-terminal side plate, 15-top plate hole, 16-terminal side plate side lug, 17-welding positioning part 17, 18-middle transition part, 19-side plate side connecting part, 20-terminal top plate, 21-ultrasonic welding machine and 22-welding table and 23-connection bonding lead group.
Detailed Description
The invention is further illustrated by the following specific figures and examples.
As shown in fig. 1 and 2: in order to improve the production efficiency and the quality of the IGBT module, the IGBT module comprises a packaging bottom plate 8, a first module copper-clad ceramic plate 10 arranged on the packaging bottom plate 8 and a second module copper-clad ceramic plate 11 arranged on the packaging bottom plate 8, wherein a first IGBT chip unit body is arranged on the first module copper-clad ceramic plate 10, and a second IGBT chip unit body is arranged on the second module copper-clad ceramic plate 11; the first IGBT chip unit body and the second IGBT chip unit body can be in adaptive connection with the power terminal group and the control terminal plate group on the packaging bottom plate 8 so as to be connected into a required IGBT topological circuit;
the power terminal group is in adaptive electrical connection with the first module copper-clad ceramic plate 10 and the second module copper-clad ceramic plate 11, and a power terminal body in the power terminal group is fixed with the first module copper-clad ceramic plate 10 and/or the second module copper-clad ceramic plate 11 through ultrasonic welding or through soft solder welding.
Specifically, encapsulation bottom plate 8 specifically can adopt current commonly used material, and encapsulation bottom plate 8 can be the rectangle form, specifically can select according to actual need, all sets up bottom plate hole 12 at encapsulation bottom plate 8's both ends, and bottom plate hole 12 link up encapsulation bottom plate 8. The first copper-clad ceramic plate 10 of module, the second copper-clad ceramic plate 11 welded fastening of module are on encapsulation bottom plate 8, and the first copper-clad ceramic plate 10 of module is close to each other between the second copper-clad ceramic plate 11 of module, and the first copper-clad ceramic plate 10 of module, the second copper-clad ceramic plate 11 of module are concrete and are unanimous with the cooperation of encapsulation bottom plate 8 with present mutually, specifically are that this technical field personnel are familiar with, and this is no longer repeated here.
In the embodiment of the present invention, the first IGBT chip unit is disposed on the first copper-clad ceramic plate 10 of the module, the second IGBT chip unit is disposed on the second copper-clad ceramic plate 11 of the module, and the specific matching form between the first IGBT chip unit and the first copper-clad ceramic plate 10 of the module is the same as that in the prior art, which is well known to those skilled in the art, and is not described herein again. Similarly, the matching between the second IGBT chip unit and the second copper clad ceramic board 11 of the module can be the same as that in the prior art. Of course, other numbers of IGBT chip units may be further disposed on the package substrate 8, and the selection is specifically performed according to actual needs to meet the requirement of the connected IGBT topology circuit, which is not described herein again. The power terminal group and the control terminal plate group are electrically connected with the first IGBT chip unit body and the second IGBT chip unit body correspondingly, so that an IGBT topological circuit can be led out, and connection and matching are facilitated during use.
In the embodiment of the invention, the power terminal group is in adaptive electrical connection with the first module copper-clad ceramic plate 10 and the second module copper-clad ceramic plate 11, the power terminal body in the power terminal group is fixed with the first module copper-clad ceramic plate 10 and/or the second module copper-clad ceramic plate 11 through ultrasonic welding or soft solder welding, and the production efficiency and the quality of the IGBT module can be improved through the ultrasonic welding or soft solder welding.
Furthermore, a control terminal copper-clad ceramic plate 9 is arranged at one end part of the package base plate 8, a control terminal plate group is arranged on the control terminal copper-clad ceramic plate 9, and control terminal connection plates in the control terminal plate group are mutually independent.
During specific implementation, a control terminal copper-clad ceramic plate body 9 is arranged at one end part of the packaging bottom plate 8, the control terminal plate group is installed on the control terminal copper-clad ceramic plate body 9, and control terminals in the control terminal plate group are mutually independent, namely the control terminals in the control terminal plate group are mutually independent, so that the connection requirements with an IGBT topological circuit can be met. In addition, compare with current control terminal seat that adopts plastics, deformation, shrink, burr scheduling problem that bring in can effectively reducing the production process can improve the production efficiency of IGBT module and the reliability of connecting.
Fig. 4 is a schematic diagram of an IGBT topology circuit, but of course, other topology forms may be adopted, and specifically, the topology form may be selected according to needs. The present invention will be specifically described below by taking the IGBT topology circuit in fig. 4 as an example. Specifically, the IGBT topology circuit includes a first IGBT chip unit and a second IGBT chip unit, where the first IGBT chip unit includes a first IGBT chip and a first fast recovery diode chip, and the second IGBT chip unit includes a second IGBT chip and a second fast recovery diode chip.
Further, the control terminal plate group comprises a control terminal first connecting plate 4, a control terminal second connecting plate 5, a control terminal third connecting plate 6 and a control terminal fourth connecting plate 7, the control terminal first connecting plate 4, the control terminal second connecting plate 5, the control terminal third connecting plate 6 and the control terminal fourth connecting plate 7 are vertically fixed on the control terminal copper-clad ceramic plate 9,
the control terminal first connecting plate 4, the control terminal second connecting plate 5, the control terminal third connecting plate 6 and the control terminal fourth connecting plate 7 are electrically connected with the first IGBT chip unit body and the second IGBT chip unit body through connecting bonding lead groups.
In the embodiment of the present invention, the first control terminal connecting plate 4, the second control terminal connecting plate 5, the third control terminal connecting plate 6, and the fourth control terminal connecting plate 7 are vertically distributed above the package substrate 8, and the corresponding length directions of the first control terminal connecting plate 4, the second control terminal connecting plate 5, the third control terminal connecting plate 6, and the fourth control terminal connecting plate 7 are parallel to each other.
In specific implementation, the control terminal first connecting plate 4, the control terminal second connecting plate 5, the control terminal third connecting plate 6 and the control terminal fourth connecting plate 7 are independent from each other, i.e. the specific electrical connection state is not affected. The connection bonding lead group 23 is prepared through an aluminum wire bonding process, the specific process conditions, the specific process and the like of the aluminum wire bonding process are consistent with those of the prior art, the connection and the matching between the first connecting plate 4 of the control terminal, the second connecting plate 5 of the control terminal, the third connecting plate 6 of the control terminal and the fourth connecting plate 7 of the control terminal and the unit bodies of the first IGBT chip and the second IGBT chip can be realized through the connection bonding lead group 23, the connection and the matching between the unit bodies of the first IGBT chip and the unit bodies of the second IGBT chip can be realized, and the form obtained after the specific connection and the matching can refer to the circuit topology in the graph 4. When the bonding lead is adopted for connection, the steps of lead assembly and spot welding in production can be simplified based on the bonding process, and the cost is reduced.
In the embodiment of the present invention, the IGBT1 in fig. 4 is the first IGBT chip, the FRD1 is the first fast recovery diode chip, the IGBT2 is the second IGBT chip, and the FRD2 is the second fast recovery diode chip. The first IGBT chip and the second IGBT chip may both adopt the existing commonly used device form, and similarly, the first fast recovery diode chip and the second fast recovery diode chip may also both adopt the existing commonly used device form, which is known to those skilled in the art specifically, and will not be described herein again. The first IGBT chip and the first fast recovery diode chip are disposed on the first copper clad ceramic plate 10 of the module by the conventional common technical means or method, and the second IGBT chip and the second fast recovery diode chip are also disposed on the second copper clad ceramic plate 11 of the module by the conventional common technical means, which is well known to those skilled in the art and is not described herein again.
In the embodiment of the present invention, the number of the first IGBT chip and the first fast recovery diode chip in the first IGBT chip unit is 1: 1; the number of the second IGBT chips and the number of the second fast recovery diode chips in the second IGBT chip unit body are 1: 1. in specific implementation, the first fast recovery diode chip and the second fast recovery diode chip can generally adopt FRD chips with large current, so that the number of chips connected in parallel can be reduced, and current inconsistency caused by excessive parallel current is reduced.
Further, the power terminal group includes a first power terminal body 1, a second power terminal body 2 and a third power terminal body 3, and the first power terminal body 1, the second power terminal body 2 and the third power terminal body 3 are vertically distributed above the package base plate 8;
the first power terminal body 1 is positioned on the first copper clad ceramic plate 10 of the module, the first power terminal body 1 is connected with the collector terminal of the first IGBT chip and the cathode terminal of the first fast recovery diode chip in the first IGBT chip unit body, the second power terminal body 2 stretches across the first copper clad ceramic plate 10 of the module and the second copper clad ceramic plate 11 of the module, and the second power terminal body 2 is electrically connected with the emitter terminal of the first IGBT chip and the anode terminal of the first fast recovery diode chip; the third power terminal body 3 is disposed on the second copper clad ceramic plate 11 of the module, and the third power terminal body 3 is connected to the emitter terminal of the second IGBT chip in the second IGBT chip unit and the cathode terminal of the second fast recovery diode chip.
In the embodiment of the present invention, the first power terminal body 1, the second power terminal body 2, and the third power terminal body 3 all have the same structure, and the first power terminal body 1, the second power terminal body 2, and the third power terminal body 3 are vertically distributed above the package substrate 8. In a specific embodiment, the first power terminal body 1 and the second power terminal body 2 are welded and fixed to the first copper-clad ceramic plate 10 of the module by ultrasonic welding, and the third power terminal body 3 is welded and fixed to the second copper-clad ceramic plate 11 of the module by ultrasonic welding. Further, although the second power terminal body 2 is fixed by soldering to the module first copper-clad ceramic board 10, the second power terminal body 2 spans the module first copper-clad ceramic board 10 and the module second copper-clad ceramic board 11 in spatial position.
After the first power terminal body 1, the second power terminal body 2, and the second power terminal body 3 are connected as described above, the corresponding electrical connection shown in fig. 4 can be formed, and reference may be made to fig. 4. Certainly, when the corresponding IGBT circuit topology is needed, the corresponding electrical connection and matching of the first power terminal body 1, the second power terminal body 2, and the second power terminal body 3 need to be adjusted, which is well known to those skilled in the art and will not be described herein again.
Since the first power terminal body 1, the second power terminal body 2, and the second power terminal body 3 may have the same configuration, the first power terminal body 1 will be described as an example.
As shown in fig. 3, the first power terminal body 1 includes a terminal top plate 20 and terminal side plates 14 disposed at two ends of the terminal top plate 20, one end of the terminal side plate 14 is connected to the terminal top plate 20, and a terminal body connecting plate is disposed at the other end of the terminal side plate 14;
the terminal body connecting plate includes a welding position portion 17, and the welding position portion 17 is located outside the terminal top plate 20 and the terminal side plate 14, and can be fixed to the module first copper clad ceramic plate 10 by ultrasonic welding through the welding position portion 17.
In the embodiment of the present invention, the first power terminal body 1 is a hollow structure, the terminal top plate 20 is a flat plate, the terminal side plates 14 are disposed on two sides of the terminal top plate 20, the terminal side plates 14 can be perpendicular to the terminal top plate 20, and the terminal side plates 14 are parallel to each other; the hollow structure formed by the terminal top plate 20 and the two terminal side plates 14 can reduce heat generation of the power terminal body. The terminal side plate 14 is connected to a terminal body connecting plate located inside the terminal side plate 14, the inside of the terminal side plate 14 specifically indicating a side where the two terminal side plates 14 are adjacent to each other.
Specifically, the terminal body connecting plate includes a welding positioning portion 17, the welding positioning portion 17 is located on the outer side of the terminal top plate 20 and the terminal side plate 14, and the first power terminal body 1 and the first module copper-clad ceramic plate 10 can be fixed by ultrasonic welding through the welding positioning portion 17, that is, the first power terminal body and the first module copper-clad ceramic plate 10 can be fixedly connected.
When the welding positioning portion 17 is used for ultrasonic welding, because the welding positioning portion 17 is located on the outer side of the terminal top plate 20 and the terminal side plate 14, the movable welding head 13 of the ultrasonic welding machine 21 can be conveniently matched with the welding positioning portion 17, namely the terminal top plate 20 and the terminal side plate 14 cannot influence the matching of the movable welding head 13 and the welding positioning portion 17, and the mode of specifically utilizing the matching of the movable welding head 13 and the welding positioning portion 17 to realize ultrasonic welding is consistent with the existing ultrasonic welding, which is particularly known by people in the technical field.
Further, the terminal body connecting plate further includes a side plate side connecting portion 19 connected with the terminal side plate 14 in an adaptive manner, and a middle transition portion 18 for connecting the side plate side connecting portion 19 and the welding positioning portion 17, where the middle transition portion 18 is in an inclined shape, and the welding positioning portion 17 is located below the side plate side connecting portion 19.
In the embodiment of the present invention, the side plate side edge connecting portion 19 is connected to the end portion of the terminal side plate 14, the side plate side edge connecting portion 19 may be parallel to the terminal top plate 20, and the intermediate transition portion 18 is inclined, so that the welding positioning portion 17 is located below the side plate side edge connecting portion 19. Further, a terminal side plate side projection 16 is provided on the side of the terminal side plate 14, and the terminal side plate side projection 16 and the welding positioning portion 17 are located on the same side of the terminal side plate 14. The terminal side plate projection 16 is also located on the rear side of the welding position determining portion 17, i.e., does not affect the ultrasonic welding of the welding position determining portion 17. The strength of the first power terminal body 1 can be increased by the terminal side plate side projection 16. The terminal top plate 20 is provided with a top plate hole 15, and the top plate hole 15 penetrates through the terminal top plate 20.
As shown in fig. 5 and 6, in order to schematically illustrate the ultrasonic welding, it is necessary to use an ultrasonic welding machine 21 when performing the ultrasonic welding, the ultrasonic welding machine 21 has a movable horn 13 which can be moved up and down and a welding table 21, the movable horn 13 is positioned above the welding table 21, and the movable horn 13 can be moved up and down above the welding table 21. During specific welding, the package base plate 8 is placed on the welding table 21, the movable welding head 13 is aligned with the welding positioning portion 17 of the first power terminal body 1, at this time, the movable welding head 13 is close to the welding positioning portion 17 and required ultrasonic welding operation is achieved, the specific ultrasonic welding process is consistent with the prior art, and is specifically known to those skilled in the art, and details are not repeated here.
For the specific ultrasonic welding method of the second power terminal body 2 and the second power terminal body 3, the description of the first power terminal body 1 can be referred to, and details are not repeated here. When the first power terminal body 1 and the second power terminal body 2 are fixed on the first copper-clad ceramic plate 10 of the module through ultrasonic welding, and the third power terminal body 3 is fixed on the second copper-clad ceramic plate 11 of the module through ultrasonic welding, the problems of dust edges, tin overflow and the like during the existing soldering tin welding can be avoided, the use of welding tools can be greatly reduced, the assembly efficiency is improved, and the assembly cost is reduced.
In specific implementation, when the first power terminal body 1, the second power terminal body 2, and the second power terminal body 3 are fixed by soldering, the soldering positioning portion 17 is fixed by soldering with the first copper-clad ceramic board 10 and the second copper-clad ceramic board 11, and the specific soldering conditions and manner are the same as those in the prior art, which are well known to those skilled in the art and will not be described herein again.
Claims (10)
1. A high-efficiency packaged IGBT module comprises a packaging bottom plate (8), a first module copper-clad ceramic plate (10) arranged on the packaging bottom plate (8) and a second module copper-clad ceramic plate (11) arranged on the packaging bottom plate (8), wherein a first IGBT chip unit body is arranged on the first module copper-clad ceramic plate (10), and a second IGBT chip unit body is arranged on the second module copper-clad ceramic plate (11); the first IGBT chip unit body and the second IGBT chip unit body can be in adaptive connection with a power terminal group and a control terminal plate group on a packaging bottom plate (8) so as to be connected into a required IGBT topological circuit; the method is characterized in that:
the power terminal group is in adaptive electric connection with the first copper-clad ceramic plate (10) of the module and the second copper-clad ceramic plate (11) of the module, and a power terminal body in the power terminal group is fixed with the first copper-clad ceramic plate (10) of the module and/or the second copper-clad ceramic plate (11) of the module through ultrasonic welding or through soft solder welding.
2. The high efficiency packaged IGBT module of claim 1, wherein: a control terminal copper-clad ceramic plate (9) is arranged at one end part of the packaging bottom plate (8), a control terminal plate group is installed on the control terminal copper-clad ceramic plate (9), and control terminal connecting plates in the control terminal plate group are mutually independent.
3. The high efficiency packaged IGBT module of claim 2, wherein: the control terminal plate group comprises a control terminal first connecting plate (4), a control terminal second connecting plate (5), a control terminal third connecting plate (6) and a control terminal fourth connecting plate (7), the control terminal first connecting plate (4), the control terminal second connecting plate (5), the control terminal third connecting plate (6) and the control terminal fourth connecting plate (7) are vertically fixed on a control terminal copper-clad ceramic plate (9),
the first connecting plate (4) of the control terminal, the second connecting plate (5) of the control terminal, the third connecting plate (6) of the control terminal and the fourth connecting plate (7) of the control terminal are electrically connected with the first IGBT chip unit body and the second IGBT chip unit body through connecting bonding lead groups.
4. The high efficiency packaged IGBT module of claim 1, wherein: the power terminal group comprises a first power terminal body (1), a second power terminal body (2) and a third power terminal body (3), and the first power terminal body (1), the second power terminal body (2) and the third power terminal body (3) are vertically distributed above the packaging bottom plate (8);
the first power terminal body (1) is positioned on the first copper clad ceramic plate (10) of the module, the first power terminal body (1) is connected with the collector end of the first IGBT chip in the first IGBT chip unit body and the cathode end of the first fast recovery diode chip, the second power terminal body (2) stretches across the first copper clad ceramic plate (10) of the module and the second copper clad ceramic plate (11) of the module, and the second power terminal body (2) is electrically connected with the emitter end of the first IGBT chip and the anode end of the first fast recovery diode chip; the third power terminal body (3) is arranged on the second copper-clad ceramic plate (11) of the module, and the third power terminal body (3) is connected with the emitter end of the second IGBT chip in the second IGBT chip unit body and the cathode end of the second fast recovery diode chip.
5. The high efficiency packaged IGBT module of claim 4, wherein: the first power terminal body (1) comprises a terminal top plate (20) and terminal side plates (14) arranged at two ends of the terminal top plate (20), one end of each terminal side plate (14) is connected with the terminal top plate (20), and a terminal body connecting plate is arranged at the other end of each terminal side plate (14);
the terminal body connecting plate comprises welding positioning parts 17(17), the welding positioning parts 17(17) are positioned on the outer sides of the terminal top plate (20) and the terminal side plate (14), and the terminal body connecting plate can be fixed with the module first copper-clad ceramic plate (10) through ultrasonic welding through the welding positioning parts 17 (17).
6. The high efficiency packaged IGBT module of claim 5, wherein: the terminal body connecting plate further comprises a side plate side connecting portion (19) in adaptive connection with the terminal side plate (14) and a middle transition portion (18) used for connecting the side plate side connecting portion (19) with the welding positioning portion (17), the middle transition portion (18) is inclined, and the welding positioning portion (17) is located below the side plate side connecting portion (19).
7. The high efficiency packaged IGBT module of claim 5 or 6, wherein: a terminal side plate side projection (16) is arranged on the side of the terminal side plate (14), and the terminal side plate side projection (16) and the welding positioning part (17) are positioned on the same side of the terminal side plate (14).
8. The high efficiency packaged IGBT module of claim 4, wherein: the number of the first IGBT chips and the first fast recovery diode chips in the first IGBT chip unit body is 1: 1;
the number of the second IGBT chips and the number of the second fast recovery diode chips in the second IGBT chip unit body are 1: 1.
9. the high efficiency packaged IGBT module of claim 3, wherein: the connecting bonding lead group is prepared by an aluminum wire bonding process.
10. The high efficiency packaged IGBT module of claim 1, wherein: the first copper-clad ceramic plate (10) of the module and the second copper-clad ceramic plate (11) of the module are welded and fixed on the packaging bottom plate (8), bottom plate holes (12) are formed in the two ends of the packaging bottom plate (8), and the bottom plate holes (12) are communicated with the packaging bottom plate (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN107946293A (en) * | 2017-12-22 | 2018-04-20 | 江苏宏微科技股份有限公司 | A kind of power module package structure |
| CN109994439A (en) * | 2019-05-06 | 2019-07-09 | 合肥中恒微半导体有限公司 | A kind of IGBT module and its packaging technology of high-temperature resistant degree circulation |
| CN110010579A (en) * | 2019-05-06 | 2019-07-12 | 合肥中恒微半导体有限公司 | A kind of signal terminal built-in power semiconductor module and its packaging technology |
| CN110867416A (en) * | 2018-08-27 | 2020-03-06 | 株洲中车时代电气股份有限公司 | Power semiconductor module packaging structure |
| CN111863789A (en) * | 2020-06-22 | 2020-10-30 | 扬州国扬电子有限公司 | Low inductance power module |
| CN212062427U (en) * | 2020-05-05 | 2020-12-01 | 河南省丽晶美能电子技术有限公司 | Low stress power electrode |
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| CN107946293A (en) * | 2017-12-22 | 2018-04-20 | 江苏宏微科技股份有限公司 | A kind of power module package structure |
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| CN109994439A (en) * | 2019-05-06 | 2019-07-09 | 合肥中恒微半导体有限公司 | A kind of IGBT module and its packaging technology of high-temperature resistant degree circulation |
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