CN114899162A - Module and manufacturing method thereof - Google Patents
Module and manufacturing method thereof Download PDFInfo
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- CN114899162A CN114899162A CN202210504802.0A CN202210504802A CN114899162A CN 114899162 A CN114899162 A CN 114899162A CN 202210504802 A CN202210504802 A CN 202210504802A CN 114899162 A CN114899162 A CN 114899162A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 100
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 238000003825 pressing Methods 0.000 claims abstract description 36
- 238000003466 welding Methods 0.000 claims description 46
- 229910000679 solder Inorganic materials 0.000 claims description 32
- 239000011324 bead Substances 0.000 claims description 24
- 238000000465 moulding Methods 0.000 claims description 17
- 238000005476 soldering Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 238000001746 injection moulding Methods 0.000 claims description 7
- 238000007639 printing Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000010330 laser marking Methods 0.000 claims description 3
- 239000007779 soft material Substances 0.000 claims description 3
- 238000005452 bending Methods 0.000 claims description 2
- 230000001680 brushing effect Effects 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 230000004907 flux Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000005022 packaging material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/165—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention provides a module and a manufacturing method thereof, wherein the module comprises an aluminum substrate, a radiating fin, a power device chip, a rectifier diode, a metal pressing strip, pins and a plastic package part, wherein the radiating fin is welded on the aluminum substrate, the bottom surface of the power device chip is a source electrode, the top surface of the power device chip is a drain electrode, the source electrode is electrically connected with the radiating fin, and the drain electrode is electrically connected with the metal pressing strip; the back of the rectifier diode is a cathode, the front of the rectifier diode is an anode, the cathode of the rectifier diode is electrically connected with the source electrode of the power device chip through the radiating fin, and the anode is electrically connected with the drain electrode of the power device chip through the metal pressing strip; the metal pressing bar is electrically connected with the power device chip, the rectifier diode and the aluminum substrate respectively; the pin is used for being connected with a circuit on an external electric control board to realize electric connection, and is used for connecting a power supply to the power device chip and transmitting signals with the outside; the radiating fin, the power device chip, the rectifier diode and the metal pressing strip are arranged in the plastic packaging material part. The invention can save the equipment cost and improve the production efficiency.
Description
Technical Field
The invention relates to the technical field of modular intelligent power systems, in particular to a module and a manufacturing method thereof.
Background
With the continuous progress of society, the demand of electrical equipment is also continuously developing. The Power device, i.e. the modular Intelligent Power system MIPS (modular Intelligent Power system), is a Power driving product combining Power electronics and integrated circuit technology, and the MIPS not only integrates a Power switch device and a driving circuit, but also embeds fault detection circuits such as overvoltage, overcurrent and overheat, and can send detection signals to a CPU or a DSP for interrupt processing. The high-speed low-power-consumption chip is composed of a high-speed low-power-consumption chip, an optimized gate-level driving circuit and a quick protection circuit. Even if a load accident or improper use occurs, the MIPS can be protected from being damaged. MIPS generally uses an IGBT as a power switching element, and has an integrated structure in which a current sensor and a driving circuit are incorporated. The traditional intelligent power module generally adopts a high-voltage driving IC to drive an IGBT, generally has 6-path three-phase full-bridge driving, and is widely applied to the fields of industrial control, household appliances and the like.
Because the current passing through the conventional power device chip and the conventional rectifier diode chip during operation is very large, referring to fig. 5, thick aluminum wires with a diameter of 20mil are welded between the power device chip and the rectifier diode and between the power device chip and the aluminum substrate 101 to realize electrical connection, so as to ensure that the aluminum wires are not fused when the power module operates. The working principle of the existing aluminum wire welding equipment is that the end point of an aluminum wire 103 is directly pressed on a welding point of a chip 102 by the output pressure of a welding pin 104, so that the aluminum wire and the welding point metal on the surface of the chip form alloy. In order to avoid poor conduction at a welding point, the larger the diameter of a welding aluminum wire is, the larger the pressure provided by a welding pin is, the chip is made of a semiconductor material and is hard and brittle, and the welding pin is too high in pressure, so that the welding point of the chip is crushed to form a crater. Thereby damaging the surface of the chip, the quality of the product is poor, the production efficiency is low, and simultaneously, the cost of the equipment is improved by using a corresponding route wire bonding machine for processing a welding aluminum wire.
Disclosure of Invention
Aiming at the defects of the related technologies, the invention provides a module which is low in cost, good in product quality and convenient for improving the production efficiency and a manufacturing method thereof.
In order to solve the above technical problem, in a first aspect, an embodiment of the present invention provides a module, including: the LED chip comprises an aluminum substrate, a radiating fin, a power device chip, a rectifier diode, a metal pressing strip, pins and a plastic package material, wherein the radiating fin is welded on the aluminum substrate, the bottom surface of the power device chip is a source electrode, the top surface of the power device chip is a drain electrode, the source electrode is electrically connected with the radiating fin, and the drain electrode is electrically connected with the metal pressing strip; the back surface of the rectifier diode is a negative electrode, the front surface of the rectifier diode is a positive electrode, the negative electrode of the rectifier diode is electrically connected with the source electrode of the power device chip through the radiating fin, and the positive electrode of the rectifier diode is electrically connected with the drain electrode of the power device chip through the metal pressing strip; the metal pressing bar is electrically connected with the power device chip, the rectifier diode and the aluminum substrate respectively; the pin is used for being connected with a circuit on an external electric control board to realize electric connection, and is used for connecting a power supply to the power device chip and transmitting signals with the outside; the radiating fin, the power device chip, the rectifier diode and the metal pressing strip are arranged in the plastic packaging part.
Preferably, the metal bead includes a bead body, and a first contact portion, a second contact portion, and a third contact portion that are formed by the bead body protruding toward the aluminum substrate, where the first contact portion is electrically connected to the drain of the power device chip, the second contact portion is electrically connected to the positive electrode of the rectifier diode, and the third contact portion is electrically connected to the aluminum substrate.
Preferably, the first contact portion and the drain of the power device chip are soldered by solder paste, the second contact portion and the anode of the rectifier diode are soldered by solder paste, and the third contact portion and the aluminum substrate are soldered by solder paste.
Preferably, the first contact portion, the second contact portion, and the third contact portion are formed to penetrate through a first through hole, a second through hole, and a third through hole, respectively.
Preferably, the first through hole and the third through hole are both square structures, and the second through hole is a circular structure.
Preferably, the first contact portion and the second contact portion have the same height with respect to the molding main body, and the third contact portion has a height with respect to the molding main body that is greater than the heights of the first contact portion and the second contact portion with respect to the molding main body.
Preferably, the module further includes a plurality of resistors disposed on the aluminum substrate, and the plurality of resistors are electrically connected to the aluminum substrate.
Preferably, the module further includes a plurality of thin aluminum wires, and the thin aluminum wires are respectively connected to the aluminum substrate and the gate of the power device chip.
Preferably, one side of the aluminum substrate is provided with a circuit wiring, and the circuit wiring is provided with a welding spot for mounting the radiating fin, the pins, the plurality of thin aluminum wires, the drive IC chip and the resistance-capacitance device.
In a second aspect, an embodiment of the present invention further provides a method for manufacturing a module, where the method includes the following steps:
s1, soft material welding: heating a copper radiating fin to about 350 ℃ in a nitrogen protection environment, coating a layer of welding flux with a melting point of 330 ℃ on the surface of the radiating fin, and attaching a power device chip and a rectifying diode chip to the radiating fin;
s2, solder paste printing: brushing solder paste with the melting point of 220 ℃ on the position where the device is pasted on the aluminum substrate;
s3, first SMT patch: mounting a heat sink assembly, a capacitor and a resistor on which a power device is mounted on the heat sink;
s4, chip mounting: mounting a driver IC on an aluminum substrate;
s5, tin dotting: solder paste is sprayed on the surface of a drain electrode of the power device and the surface of an anode of the rectifier diode;
s6, second SMT paster: mounting a metal pressing strip;
s7, mounting pins: mounting the pins on corresponding welding points of the aluminum substrate;
s8, reflow soldering: the product is cured on an aluminum substrate through a reflow oven with the peak temperature set to 230 ℃, and a metal batten is cured on the product;
s9, welding a fine aluminum wire: aluminum wires with the diameter of 1.5mil are welded between the welding points of the driving IC chip and the aluminum substrate, and between the grid welding point of the power device chip and the welding point of the aluminum substrate to realize the electrical connection;
s10, injection molding and fixing: encapsulating the product into the interior of a molding compound by injection molding;
s11, laser marking: printing product information on the shell of the product plastic package material;
s12, manufacturing and molding: and (4) blanking and bending the pins into a required shape.
Compared with the prior art, the radiating fin is welded on the aluminum substrate, the bottom surface of the power device chip is a source electrode, the top surface of the power device chip is a drain electrode, the source electrode is electrically connected with the radiating fin, and the drain electrode is electrically connected with the metal pressing strip; the back surface of the rectifier diode is a negative electrode, the front surface of the rectifier diode is a positive electrode, the negative electrode of the rectifier diode is electrically connected with the source electrode of the power device chip through the radiating fin, and the positive electrode of the rectifier diode is electrically connected with the drain electrode of the power device chip through the metal pressing strip; the metal pressing bar is electrically connected with the power device chip, the rectifier diode and the aluminum substrate respectively; the pin is used for being connected with a circuit on an external electric control board to realize electric connection, and is used for connecting a power supply to the power device chip and transmitting signals with the outside; the radiating fin, the power device chip, the rectifier diode and the metal pressing strip are arranged in the plastic packaging part; the metal pressing strip is solidified on the surface of the power chip by using a solder paste reflow soldering process, so that the surface of the chip is not damaged, and the yield of products can be improved; a production line does not need a coarse aluminum wire welding machine, so that the equipment cost is saved; and further the production efficiency can be improved.
Drawings
The present invention will be described in detail below with reference to the accompanying drawings. The foregoing and other aspects of the invention will become more apparent and more readily appreciated from the following detailed description, taken in conjunction with the accompanying drawings. In the drawings:
FIG. 1 is a schematic structural diagram of a module of the present invention;
FIG. 2 is a schematic perspective view of a module according to the present invention;
FIG. 3 is a schematic view of the structure of the metal bead of the module of the present invention;
FIG. 4 is a flow chart of a method of manufacturing a module of the present invention;
fig. 5 is a schematic structural diagram of a power module in the prior art.
In the figure, 201, an aluminum substrate, 202, a heat sink, 203, a power device chip, 204, a rectifier diode, 205, solder paste, 206, a metal pressing strip, 207, pins, 208, a plastic sealing material, 209, a resistor, 210, a thin aluminum wire, 211, an IC chip, 301, a first contact part, 302, a second contact part, 303, a third contact part, 304, a pressing strip body, 305, a first through hole, 306, a second through hole, 307 and a third through hole.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings.
The embodiments/examples described herein are specific embodiments of the present invention, are intended to be illustrative of the concepts of the present invention, are intended to be illustrative and exemplary, and should not be construed as limiting the embodiments and scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification of the present application, and these technical solutions include those which make any obvious replacement or modification of the embodiments described herein, and all of which are within the scope of the present invention.
Example one
Please refer to fig. 1-3, wherein fig. 1 is a schematic structural diagram of a module according to the present invention; FIG. 2 is a schematic perspective view of a module according to the present invention; fig. 3 is a schematic structural view of a metal bead of the module of the present invention. The present invention provides a module, comprising: the LED packaging structure comprises an aluminum substrate 201, a heat radiating fin 202, a power device chip 203, a rectifier diode 204, a metal pressing strip 206, pins 207 and a plastic package part 208, wherein the heat radiating fin 202 is welded on the aluminum substrate 201, the bottom surface of the power device chip 203 is a source electrode, the top surface of the power device chip 203 is a drain electrode, the source electrode is electrically connected with the heat radiating fin 202, and the drain electrode is electrically connected with the metal pressing strip 206; the back surface of the rectifier diode 204 is a negative electrode, the front surface of the rectifier diode 204 is a positive electrode, the negative electrode of the rectifier diode 204 is electrically connected with the source electrode of the power device chip 203 through the heat sink 202, and the positive electrode of the rectifier diode 204 is electrically connected with the drain electrode of the power device chip 203 through the metal bead 206; the metal pressing bar 206 is electrically connected with the power device chip 203, the rectifier diode 204 and the aluminum substrate 201 respectively; the pin 207 is used for being connected with a circuit on an external electric control board to realize electric connection, and is used for connecting a power supply to the power device chip 203 and transmitting signals with the outside; the heat sink 202, the power device chip 203, the rectifier diode 204, and the metal bead 206 are disposed in the plastic package 208.
The metal bead 206 is made of a copper foil with good conductivity.
The heat sink 202, the power device chip 203, the rectifier diode 204, the metal bead 206 and the pin 207 are all multiple. The pins 207 include a plurality of pins and are arranged side by side.
Specifically, the plastic package member 208 is used for installing and arranging the heat sink 202, the power device chip 203, the rectifier diode 204 and the metal bead 206, so that components on the power module are isolated from the external environment, and a protection effect is achieved. By welding the heat sink 202 on the aluminum substrate 201, the bottom surface of the power device chip 203 is a source, the front surface of the power device chip 203 is a drain, the source is electrically connected with the heat sink 202, and the drain is electrically connected with the metal bead 206; the back surface of the rectifier diode 204 is a negative electrode, the front surface of the rectifier diode 204 is a positive electrode, the negative electrode of the rectifier diode 204 is electrically connected with the source electrode of the power device chip 203 through the heat sink 202, and the positive electrode of the rectifier diode 204 is electrically connected with the drain electrode of the power device chip 203 through the metal pressing strip 206; the metal pressing bar 206 is electrically connected with the power device chip 203, the rectifier diode 204 and the aluminum substrate 201 respectively; the pin 207 is used for being electrically connected with a circuit on an external electric control board, and is used for connecting a power supply to the power device chip 203 and transmitting signals with the outside. Therefore, the metal pressing strip 206 is solidified on the surface of the power chip by using the solder paste 205 reflow soldering process, so that the surface of the chip is not damaged, and the product yield can be improved; a production line does not need a coarse aluminum wire welding machine, so that the equipment cost is saved; and further the production efficiency can be improved.
In this embodiment, the metal bead 206 includes a bead body 304, and a first contact portion 301, a second contact portion 302, and a third contact portion 303 formed by the bead body 304 protruding toward the aluminum substrate 201, wherein the first contact portion 301 is electrically connected to the drain of the power device chip 203, the second contact portion 302 is electrically connected to the positive electrode of the rectifier diode 204, and the third contact portion 303 is electrically connected to the aluminum substrate 201. The power device chip 203, the rectifier diode 204 and the aluminum substrate 201 are covered by the bead body 304, and the first contact portion 301, the second contact portion 302 and the third contact portion 303 are arranged on the bead body 304 and used for soldering the solder paste 205 on the drain electrode of the corresponding power device chip 203, the anode of the rectifier diode 204 and the aluminum substrate 201, so that the effect of electric connection is realized, the drain electrode of the power device chip 203, the anode of the rectifier diode 204 and the aluminum substrate 201 are conveniently electrically connected, and the conduction is convenient.
The molding main body 304 can also support the first contact portion 301, the second contact portion 302, and the third contact portion 303.
In this embodiment, the first contact portion 301 and the drain of the power device chip 203 are soldered by solder paste 205, the second contact portion 302 and the anode of the rectifier diode 204 are soldered by solder paste 205, and the third contact portion 303 and the aluminum substrate 201 are soldered by solder paste 205. The solder paste 205 is used for welding, so that the solder paste is convenient to solidify after reflow soldering, and the effect of electric connection is realized.
In this embodiment, the first contact portion 301, the second contact portion 302 and the third contact portion 303 respectively penetrate to form a first through hole 305, a second through hole 306 and a third through hole 307.
Specifically, the first contact portion 301, the second contact portion 302, and the third contact portion 303 are inserted to form a first through hole 305, a second through hole 306, and a third through hole 307, respectively. Because the center of the contact is a through hole, the contact area of the contact copper foil and the soldering paste 205 can be increased, and the soldering is firmer.
In this embodiment, the first through hole 305 and the third through hole 307 are both square structures, and the second through hole 306 is a circular structure. The welding cross-sectional area of the through hole with the square structure is large, and the welding of the through hole with the circular structure is stressed uniformly.
In this embodiment, the first contact portion 301 and the second contact portion 302 have the same height with respect to the molding main body 304, and the third contact portion 303 has a height with respect to the molding main body 304 that is greater than the heights of the first contact portion 301 and the second contact portion 302 with respect to the molding main body 304. Since the power device chip 203 and the rectifier diode 204 are both mounted on the heat sink 202, and the heat sink 202 is mounted on the aluminum substrate 201, a fault is formed between the upper surface of the heat sink 202 and the upper surface of the aluminum substrate 201. By making the heights of the first contact portion 301 and the second contact portion 302 with respect to the molding main body 304 the same, the height of the third contact portion 303 with respect to the molding main body 304 is larger than the heights of the first contact portion 301 and the second contact portion 302 with respect to the molding main body 304. Therefore, the welding point of the drain electrode of the power device chip 203, the welding point of the anode of the rectifier diode 204 chip and the welding point of the aluminum substrate 201 can be connected to realize electric connection.
In this embodiment, the module further includes a plurality of resistors 209 disposed on the aluminum substrate 201, and the resistors 209 are electrically connected to the aluminum substrate 201. The provision of the plurality of resistors 209 has an effect of protecting the circuit, and the safety is high.
In this embodiment, the module further includes a plurality of thin aluminum wires 210, and the thin aluminum wires 210 are respectively connected to the aluminum substrate 201 and the gates of the power device chips 203. The plurality of thin aluminum wires 210 are used for electrically connecting the aluminum substrate 201 and the power device chip 203, and the conductive effect is good.
In this embodiment, one side of the aluminum substrate 201 is disposed on a circuit wiring, and the circuit wiring is provided with a solder joint for mounting the heat sink 202, the pins 207, the plurality of thin aluminum wires 210, the driver IC chip 211, and the resistance capacitance device.
Example two
Fig. 1-4, wherein fig. 1 is a schematic structural diagram of the module of the present invention; FIG. 2 is a schematic perspective view of a module according to the present invention; FIG. 3 is a schematic view of the structure of the metal bead of the module of the present invention; FIG. 4 is a flow chart of a method of manufacturing the module of the present invention. The embodiment of the invention also provides a manufacturing method of the module, which comprises the following steps:
s1, soft material welding: the copper heat sink 202 is heated to about 350 ℃ in the nitrogen protection environment, the surface of the heat sink 202 is coated with a layer of solder with the melting point of 330 ℃, and the power device chip 203 and the rectifier diode 204 are attached to the heat sink 202.
S2, solder paste printing: the solder paste 205 with the melting point of 220 ℃ is brushed on the position where the device is mounted on the aluminum substrate 201.
S3, first SMT patch: the heat sink 202 assembly with the power device, capacitor and resistor are attached to the heat sink 202.
S4, chip mounting: the driver IC chip 211 is mounted on the aluminum substrate 201.
S5, tin dotting: solder paste 205 is sprayed on the surface of the drain electrode of the power device and the surface of the anode of the rectifier diode 204.
S6, second SMT paster: the metal bead 206 is installed.
S7, mounting pins: the pins 207 are attached to corresponding solder points of the aluminum substrate 201.
S8, reflow soldering: the product passes through a reflow oven with the peak temperature set to 230 ℃ to cure the power device chip 203 on the aluminum substrate 201, and the metal bead 206 is cured on the product.
S9, welding of thin aluminum wires: and aluminum wires with the diameter of 1.5mil are welded between the welding points of the driving IC chip 211 and the aluminum substrate 201 and between the grid welding points of the power device chip 203 and the welding points of the aluminum substrate 201 to realize the electrical connection between the two.
S10, injection molding and fixing: and encapsulating the product into the plastic package material by injection molding.
S11, laser marking: and printing product information on the shell of the product plastic package material.
S12, manufacturing and molding: the leads 207 are punched and bent into a desired shape.
Specifically, the copper heat sink 202 is heated to about 350 ℃ in a nitrogen protection environment, a layer of solder with a melting point of 330 ℃ is coated on the surface of the heat sink 202, and the power device chip 203 and the rectifier diode 204 chip are attached to the heat sink 202. The solder paste 205 with the melting point of 220 ℃ is brushed on the position where the device is mounted on the aluminum substrate 201. A heat sink assembly, a capacitor, and a resistor, on which a power device is mounted, are mounted on the heat sink 202. The driver IC is mounted on the aluminum substrate 201. Solder paste 205 is sprayed on the surface of the drain electrode of the power device and the surface of the anode of the rectifier diode 204. The metal bead 206 is mounted by welding. The pins 207 are attached to corresponding welding points of the aluminum substrate 201, the power device chip 203 is cured on the aluminum substrate 201 through a reflow oven with the peak temperature set to 230 ℃, and the metal bead 206 is cured on the product. And aluminum wires with the diameter of 1.5mil are welded between the welding points of the driving IC chip 211 and the aluminum substrate 201 and between the grid welding point of the power device chip 203 and the welding point of the aluminum substrate 201 to realize the electrical connection between the two. And encapsulating the product into the plastic package material by injection molding. And printing product information on the shell of the product plastic package material. The leads 207 are punched and bent into a desired shape. The metal pressing strip 206 is solidified on the surface of the power chip by using a solder paste 205 reflow soldering process, so that the surface of the chip is not damaged, and the product yield can be improved; a production line does not need a coarse aluminum wire welding machine, so that the equipment cost is saved; and further the production efficiency can be improved.
Compared with the prior art, the radiating fin is welded on the aluminum substrate, the bottom surface of the power device chip is a source electrode, the top surface of the power device chip is a drain electrode, the source electrode is electrically connected with the radiating fin, and the drain electrode is electrically connected with the metal pressing strip; the back surface of the rectifier diode is a negative electrode, the front surface of the rectifier diode is a positive electrode, the negative electrode of the rectifier diode is electrically connected with the source electrode of the power device chip through the radiating fin, and the positive electrode of the rectifier diode is electrically connected with the drain electrode of the power device chip through the metal pressing strip; the metal pressing bar is electrically connected with the power device chip, the rectifier diode and the aluminum substrate respectively; the pin is used for being connected with a circuit on an external electric control board to realize electric connection, and is used for connecting a power supply to the power device chip and transmitting signals with the outside; the radiating fin, the power device chip, the rectifier diode and the metal pressing strip are arranged in the plastic packaging part; the metal pressing strip is solidified on the surface of the power chip by using a solder paste reflow soldering process, so that the surface of the chip is not damaged, and the yield of products can be improved; a production line does not need a coarse aluminum wire welding machine, so that the equipment cost is saved; and further the production efficiency can be improved.
Claims (10)
1. A module, comprising: the LED chip comprises an aluminum substrate, a radiating fin, a power device chip, a rectifier diode, a metal pressing strip, pins and a plastic package material, wherein the radiating fin is welded on the aluminum substrate, the bottom surface of the power device chip is a source electrode, the top surface of the power device chip is a drain electrode, the source electrode is electrically connected with the radiating fin, and the drain electrode is electrically connected with the metal pressing strip; the back surface of the rectifier diode is a negative electrode, the front surface of the rectifier diode is a positive electrode, the negative electrode of the rectifier diode is electrically connected with the source electrode of the power device chip through the radiating fin, and the positive electrode of the rectifier diode is electrically connected with the drain electrode of the power device chip through the metal pressing strip; the metal pressing bar is electrically connected with the power device chip, the rectifier diode and the aluminum substrate respectively; the pin is used for being connected with a circuit on an external electric control board to realize electric connection, and is used for connecting a power supply to the power device chip and transmitting signals with the outside; the radiating fin, the power device chip, the rectifier diode and the metal pressing strip are arranged in the plastic packaging part.
2. The module of claim 1, wherein the metal bead includes a bead body, and a first contact portion, a second contact portion, and a third contact portion formed by the bead body protruding toward the aluminum substrate, the first contact portion being electrically connected to a drain of the power device chip, the second contact portion being electrically connected to a positive electrode of the rectifier diode, and the third contact portion being electrically connected to the aluminum substrate.
3. The module according to claim 2, wherein the first contact portion is soldered to the drain of the power device chip by solder paste, the second contact portion is soldered to the anode of the rectifier diode by solder paste, and the third contact portion is soldered to the aluminum substrate by solder paste.
4. The module of claim 2, wherein the first contact portion, the second contact portion, and the third contact portion are formed with a first via, a second via, and a third via, respectively, formed therethrough.
5. The module of claim 4, wherein the first and third through-holes are both square in configuration and the second through-hole is circular in configuration.
6. The module of claim 2, wherein the first contact portion and the second contact portion are of the same height relative to the molding body, and the third contact portion is of a greater height relative to the molding body than the first contact portion and the second contact portion.
7. The module of claim 1, further comprising a plurality of resistors disposed on the aluminum substrate, the plurality of resistors being electrically connected to the aluminum substrate.
8. The module of claim 1, further comprising a plurality of thin aluminum wires respectively connecting the aluminum substrate and the gates of the power device chips.
9. The module of claim 8, wherein the aluminum substrate is provided on one side with circuit wiring, the circuit wiring being provided with pads for mounting the heat sink, the pins, the plurality of thin aluminum wires, the driver IC chip, and the capacitive resistive device.
10. A method of manufacturing a module according to any one of claims 1-9, characterized in that the method of manufacturing comprises the steps of:
s1, soft material welding: heating a copper radiating fin to about 350 ℃ in a nitrogen protection environment, coating a layer of welding flux with a melting point of 330 ℃ on the surface of the radiating fin, and attaching a power device chip and a rectifying diode chip to the radiating fin;
s2, solder paste printing: brushing solder paste with the melting point of 220 ℃ on the position where the device is pasted on the aluminum substrate;
s3, first SMT patch: mounting a heat sink assembly, a capacitor and a resistor on which a power device is mounted on the heat sink;
s4, chip mounting: mounting a driver IC on an aluminum substrate;
s5, tin dotting: solder paste is sprayed on the surface of the drain electrode of the power device and the surface of the anode of the rectifier diode;
s6, second SMT paster: mounting a metal pressing strip;
s7, mounting pins: mounting the pins on corresponding welding points of the aluminum substrate;
s8, reflow soldering: the product is cured on an aluminum substrate through a reflow oven with the peak temperature set to 230 ℃, and a metal batten is cured on the product;
s9, welding of thin aluminum wires: aluminum wires with the diameter of 1.5mil are welded between the welding points of the driving IC chip and the aluminum substrate, and between the grid welding point of the power device chip and the welding point of the aluminum substrate to realize the electrical connection;
s10, injection molding and fixing: encapsulating the product into the interior of a molding compound by injection molding;
s11, laser marking: printing product information on the shell of the product plastic package material;
s12, manufacturing and molding: and (4) blanking and bending the pins into a required shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210504802.0A CN114899162A (en) | 2022-05-10 | 2022-05-10 | Module and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210504802.0A CN114899162A (en) | 2022-05-10 | 2022-05-10 | Module and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115394664A (en) * | 2022-08-24 | 2022-11-25 | 广东汇芯半导体有限公司 | Power module manufacturing method containing aluminum and ceramic substrate and power module |
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- 2022-05-10 CN CN202210504802.0A patent/CN114899162A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115394664A (en) * | 2022-08-24 | 2022-11-25 | 广东汇芯半导体有限公司 | Power module manufacturing method containing aluminum and ceramic substrate and power module |
| CN115394664B (en) * | 2022-08-24 | 2024-03-19 | 广东汇芯半导体有限公司 | Manufacturing method of power module comprising aluminum and ceramic substrate and power module |
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