JP4906650B2 - Power semiconductor module and manufacturing method thereof - Google Patents

Power semiconductor module and manufacturing method thereof Download PDF

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JP4906650B2
JP4906650B2 JP2007236092A JP2007236092A JP4906650B2 JP 4906650 B2 JP4906650 B2 JP 4906650B2 JP 2007236092 A JP2007236092 A JP 2007236092A JP 2007236092 A JP2007236092 A JP 2007236092A JP 4906650 B2 JP4906650 B2 JP 4906650B2
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power semiconductor
semiconductor module
sealing
bonded
circuit
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JP2009070934A (en
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昭浩 丹波
和弘 鈴木
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株式会社日立製作所
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]

Description

  The present invention relates to a power semiconductor module and a method for manufacturing the power semiconductor module, and more particularly to a power semiconductor module used for in-vehicle use and the like for high reliability and long life and a method for manufacturing the power semiconductor module.

  Large-capacity power semiconductor modules, such as large-capacity IGBT modules with rated currents of about 100 amps or higher, are sealed in a resin case in which a power semiconductor chip, an insulating substrate, a metal base, etc. are bonded. A structure sealed with a soft resin is common. This is because various kinds of different members are joined, so sealing a structure with inherent strain and stress with a resin that is stiffer than soft resin generates a new large stress at the time of sealing. This is because there is a concern of destroying the member, and it is difficult to establish structurally.

  On the other hand, small-capacity products with a rated current of several tens of amperes or less, as represented by non-insulating discrete packages, are relatively simple and small in size. However, the stress problem described above is difficult to occur. Therefore, a structure in which transfer molding is performed with an epoxy resin has been adopted because it is excellent in mass productivity and excellent in manufacturing cost reduction. In addition, it is known that the transfer molded package can increase the reliability and the life because the bonding stress between the built-in members is dispersed and reduced.

  Therefore, if the problem of large stress at the time of sealing described above is solved, the transfer mold sealing technique can be applied not only to small-capacity products of several tens of amperes but also to medium- and large-capacity products. .

  The package structure shown in [Patent Document 1] is characterized by following the conventional small-capacity transfer mold package structure as much as possible.

  That is, the insulation of the package is not a general ceramic substrate with a large capacity product, but is realized with a soft insulating resin sheet with less stress generation, and in order to eliminate the disadvantage of the insulating resin sheet with low thermal conductivity, A large copper heat spreader is used, and a power semiconductor chip is bonded to the top with solder, and heat is diffused greatly to increase the heat transfer area, thereby reducing the thermal resistance.

  However, the disadvantage of the structure of [Patent Document 1] is that the package is a one-phase package, so when applied to an inverter product, it is necessary to mount three of this package and it is difficult to attach the package. That is.

  In addition, in products where heat dissipation is an important performance, such as power semiconductor modules, the thermal contact with the heatsink is an extremely important element in the installation, so it is common sense that the installation should have at least two places. Met.

  In order to achieve good thermal contact at one location for such a problem, [Patent Document 2] uses a special mounting jig. However, using such a jig results in an increase in mounting cost including man-hours. Further, in this structure, the central mounting bolt through hole is formed by making a hole in the package, and the bolt fastens the sealing resin. As a result, the resin creeps and there is a concern that the fastening force will deteriorate over time, and therefore it is usually desirable to avoid mounting by fastening the resin part.

JP 2004-165281 A JP 2004-87552 A

  A problem to be solved with respect to the above-described conventional technology is that a three-phase inverter on a single heat sink, which has not yet been realized, in a module that performs transfer molding (hereinafter referred to as TM) of a large-capacity power semiconductor element. This is to realize a so-called three-phase power semiconductor module on which the driving power semiconductor element is mounted.

  This problem is important in order not to increase the area of the module mounting part, and in the case of a so-called direct cooling type power semiconductor module in which cooling is performed by directly applying cooling water to the heat sink, the mounting part, that is, the cooling water seal part Therefore, it is particularly important to use a three-phase power semiconductor module.

In order to solve the above problems, the present invention provides a metal circuit pattern in which a power semiconductor circuit is formed by bonding a plurality of power semiconductor elements that switch current and are electrically connected, and the metal circuit pattern is bonded. An insulating layer, a metal base bonded to the insulating layer and serving as a heat dissipation means for the power semiconductor element, wherein a plurality of the power semiconductor circuits are present on one metal base, and The power semiconductor circuit is divided into two or more regions and sealed with an epoxy resin, and the divided sealing regions are in contact with the metal base surface and partially connected with the sealing epoxy resin. It is characterized by being.

  In the power semiconductor module of the present invention, the width of the region that partially connects the sealing regions is 1/10 or less of the width of the sealing region in which the connection region is formed. It is.

  In the power semiconductor module of the present invention, the insulating layer is a metal-bonded ceramic substrate having a metal circuit pattern on the front surface and a metal plate for solder bonding on the back surface, and the metal base has copper as a main component. It is characterized by being based on copper.

  In the power semiconductor module of the present invention, the plurality of power semiconductor circuits are U, V, and W phase circuits constituting a three-phase inverter, and each U, V, and W phase circuit is divided and sealed with an epoxy resin. The sealed U, V, and W phase circuits are partially connected by the sealing epoxy resin.

  The power semiconductor module according to the present invention is characterized in that the metal-clad ceramic substrate is a copper-clad silicon nitride substrate.

  In the power semiconductor module of the present invention, each U, V, W phase circuit is formed of one or two ceramic substrates, and is divided into one or two ceramic substrates. It is characterized by being sealed with an epoxy resin.

  The power semiconductor module of the present invention is characterized in that the sealing means of the power semiconductor module is a transfer mold.

  Furthermore, in order to solve the above problems, the present invention provides a metal circuit pattern in which a power semiconductor circuit is formed by bonding and electrically connecting a plurality of power semiconductor elements that switch current, and the metal circuit pattern includes: In a power semiconductor module comprising an insulating layer to be bonded and a metal base bonded to the insulating layer and serving as a heat dissipation means for the power semiconductor element, a plurality of the power semiconductor circuits are present on one metal base. In addition, the power circuit is divided into three or more regions and sealed with epoxy resin, and the size of the sealing region at the center is larger than the sealing regions at both ends. .

  In the power semiconductor module of the present invention, the plurality of power semiconductor circuits are U, V, and W phase circuits constituting a three-phase inverter, and only the sealing region of the V-phase circuit disposed in the center part is both. It is characterized by being larger than the sealing region of the side U and W phase circuits.

  Furthermore, in order to solve the above problems, the present invention provides a metal circuit pattern in which a power semiconductor circuit is formed by bonding and electrically connecting a plurality of power semiconductor elements that switch current, and the metal circuit pattern includes: An insulating layer to be bonded, a metal base bonded to the insulating layer and serving as a heat dissipation means of the power semiconductor element, and a plurality of the power semiconductor circuits exist on the single metal base, and the power semiconductor In a method of manufacturing a power semiconductor module in which a circuit is divided into three or more regions and transfer molded with an epoxy resin, the cross-sectional area of the gate for injecting the transfer mold resin into the central sealing region is the same as the sealing region at both ends. It is characterized by being smaller than the cross-sectional area of the gate.

  Furthermore, in order to solve the above problems, the present invention provides a metal circuit pattern in which a power semiconductor circuit is formed by bonding and electrically connecting a plurality of power semiconductor elements that switch current, and the metal circuit pattern includes: An insulating layer to be bonded; a metal base that is bonded to the insulating layer and serves as a heat dissipation means of the power semiconductor element; and a plurality of the power semiconductor circuits exist on the metal base, and the power semiconductor circuit In the method of manufacturing a power semiconductor module that is divided into three or more regions and transfer molded with an epoxy resin, the number of gates for injecting the transfer mold resin into the central sealing region is the number of gates in the sealing regions at both ends. It is characterized by being less than the number.

  In the method of manufacturing the power semiconductor module of the present invention, the power semiconductor circuit is a U, V, W phase circuit constituting a three-phase inverter, and the insulating layer is a copper-bonded silicon nitride substrate. , Transfer-molded for each W-phase circuit.

  In TM, if the TM resin area is excessive, it is extremely difficult to eliminate the resin voids. Furthermore, the TM resin itself or the interface stress between the TM resin and the built-in member is excessive, and the TM structure cannot be realized. Disappear.

  Therefore, in the TM type large capacity three-phase IGBT module of the present invention, dividing the sealing region has an effect of establishing a large TM structure itself. In addition, connecting the divided sealing regions with a volume that can be ignored in volume compared to the sealing region allows the TM resin to flow between the divided regions, and the mold pressure is equalized. Therefore, the distance between the divided sealing regions can be reduced as much as possible. This is because it is possible to reduce the strength, that is, the width of the partition portion in order to prevent a load from being applied from one direction to the partition portion that divides the sealing region of the TM mold.

  In addition, adjusting the resin injection port to each region, that is, the width and number of gates, has the effect of controlling the resin injection speed and time, and as described above, a load is applied to the partition part from one direction. Therefore, the strength of the partition portion, that is, the width can be reduced. Furthermore, by providing a flow opening between each region and controlling the resin injection rate to each region to make the filling rate as uniform as possible, TM of a higher quality large capacity three-phase IGBT module can be used. This has the effect of realizing

  An embodiment of the present invention will be described below.

  The present invention is a structure that can realize a long-life, high-reliability, large-capacity three-phase IGBT module. In the structure of TM sealing with epoxy resin instead of the conventional silicone gel sealing, the sealing region is divided into three parts and divided at TM time. By adopting a structure and sealing method in which an unbalanced sealing pressure is not applied to each region, without generating excessive stress in the TM resin part and without increasing the module size, TM type large capacity three-phase IGBT module is realized.

  The first embodiment will be described with reference to FIGS. FIG. 1 is a schematic diagram of the external appearance surface of a TM type three-phase module, FIG. 2 is a schematic side view of the appearance in the longitudinal direction of the module, and FIG. 3 is a schematic view showing a partial surface of the internal structure before molding. It is.

The rated voltage / current of the IGBT module 100 of this embodiment is 600V / 400A. First, the internal structure 400 of the module before sealing will be described with reference to FIG. In FIG. 3, for simplicity, the main terminal and the control terminal shown in FIG. 1 are omitted. IGBT chip 403 of the schematic 10mm square, schematically 6 mm × 8 mm in the FWD (F ree W heeling D iode ) diode chips 404 each 2 chips single copper parallel bonding the silicon nitride substrate 402, a thickness of 0.1 mm, melting point Bonded with high melting point solder at 300 ° C or higher. The reason why the copper-clad silicon nitride substrate was selected as the ceramic substrate is that, in the case of other ceramic substrates, the substrate is cracked by thermal stress due to temperature history. In the case of a copper-clad silicon nitride substrate, the strength is about twice that of other ceramic substrates, and it has been found that this phenomenon does not occur. One board constitutes one arm of the three-phase inverter circuit.

  The size of the copper-coated silicon nitride substrate 402 is approximately 25 mm × 50 mm, and the member thickness is as follows. The surface circuit pattern thickness is 0.5 mm, the back copper plate thickness is 0.4 mm, and the silicon nitride thickness is 0.3 mm. The thicknesses of the IGBT chip 403 and the FWD chip 404 are 0.35 mm. The copper-clad silicon nitride substrate 402 on which the power semiconductor chip is mounted is soldered to the copper base 105 with a low melting point solder (eutectic solder) having a thickness of 0.15 mm and a melting point of about 180 ° C. The material of the copper base 105 is oxygen-free copper, and the thickness is 3 mm. The copper plate of the copper-coated silicon nitride substrate 402 and the surface of the copper base 105 are both nickel-plated. The thickness of the nickel plating layer is about 6 μm. The nickel plating process is performed in consideration of the reliability of the two solder bonding layers.

  The copper base 105 is provided with a through hole 111, and the IGBT module 100 is attached to the heat sink through the through hole. In the present embodiment, it is assumed that M6 bolts are fastened, and the through hole 111 is 6.6φ. The connection from the IGBT chip 403 and diode chip 404 surface electrodes to the circuit pattern on the copper-clad silicon nitride substrate 402 is made with an Al wire 405 having a wire diameter of 400 μm. In this drawing, not all wires are drawn as Al wires, but only representative wires are schematically shown. After the solder bonding of the silicon nitride substrate 402 to the copper base 105 and the main terminal and control terminal bonding to the silicon nitride substrate 402 are completed, transfer molding is performed.

  Two rows of grooves 401 formed around the two copper-clad silicon nitride substrates 402 are 1.5 mm in both width and interval, and the groove depth is 1 mm. In consideration of forming the groove 401 by pressing the copper base 105, the dimensions are such that it can be formed without difficulty. The two rows of grooves 401 form linear protrusions 406 on the copper base, and the TM resin firmly caulks the protrusions 406 to prevent peeling of the copper base and the TM resin, so-called mold lock grooves. It is. Without this mold lock structure, due to the shear stress at the TM resin / copper base interface, interface peeling occurs due to thermal stress or mechanical stress from the outside. Further, in this embodiment, in order to bond the TM resin more firmly, all the built-in members including the copper base 105 are coated with polyamide resin. That is, TM resin bonding is realized by mechanical and chemical bonding.

  The structure shown in FIG. 3 is TM, which is a schematic external view shown in FIGS. On a copper base 105 of approximately 80 mm × 210 mm, the U, V, and W phases are divided into three parts, which become sealing regions 102, 103, and 104, respectively. The linear expansion coefficient α of the sealing epoxy resin is about 16 ppm / K, which is almost the same as α based on copper. The elastic modulus E of the sealing epoxy resin is about 16 GPa. The size of one sealing region is about 65 mm square, which is a considerably large shape as a TM. Accordingly, if TM is integrated instead of being divided into three parts, the sealing region becomes excessive, a resin void becomes a problem, and it becomes difficult to realize sealing. The distance from the copper base 105 surface to the TM resin surface, that is, the TM resin thickness is 6 mm. This height is sufficiently high with respect to the Al wire 405 in FIG. Together with the copper base 105 thickness of 3 mm, the module thickness is 9 mm. Together with the physical properties of the resin and the sealing region structure, the warpage of the module bottom surface could be about 0.1 mm or less. This warpage is less than or equal to that of the conventional gel sealing module, and is a warp amount that causes no problem in terms of mounting reliability.

  On the other hand, a problem in the case of division is how to uniformly inject the TM resin into each of the regions 102, 103, and 104. For example, when TM resin is injected from two resin injection ports provided in the vicinity of the center of the V-phase sealing region 103, a small amount of resin injection is required unless a resin path (runner) is formed. Since the resin is preferentially injected into the V-phase sealing region 103 in balance, the sealing pressure in the sealing region 103 becomes excessive, resulting in a shape protruding to the regions 102 and 104 on both sides. This is because the mold at the part separating the regions 102, 103, 104 is deformed by the influence of the sealing resin pressure. Compared with the so-called potting method in which the resin is dropped after dripping the resin under atmospheric pressure, TM is injected and cured with an epoxy resin at a high pressure, so the sealing reliability can be greatly improved. In such a case, such a drawback occurs. In order to avoid this, it is conceivable to increase the width of the isolation region 112 of the sealing region to increase the mold strength of this portion so that it can withstand the resin pressure. However, for this purpose, for example, the width of the separation region 112 must be about 10 mm, and when manufactured, the effect of downsizing as a three-phase module is greatly diminished. In other words, the value of a three-phase module is lost. Therefore, in this embodiment, even if the flow region 101 of the TM resin is formed in a part between the regions 102, 103, and 104, and the resin injection speed into the regions 102, 103, and 104 is significantly different. Since the resin flows in this region, the mold pressure in only a part of the region is prevented from becoming excessive. In this embodiment, the shape of the flow area is a semicircle having a radius of 1.5 mm, and three are formed in each of the two separation areas 112. By forming the flow region 101 as described above, the width of the separation region 112 could be 1 mm when the mold pressure was 7 MPa.

  With the structure described above, it was possible to realize a resistance of 3000 times or more in a temperature cycle test in which the temperature was repeatedly changed from −40 ° C. to 125 ° C. This withstand capability is a tolerance that cannot be realized when the sealing region is not divided for each of the U, V, and W phases, and the TM resin interface is excessively stressed.

  Another feature of the present embodiment is the shape of the power terminal 106, the ground terminal 107, and the output terminal 108 which are main terminals. In a normal IGBT module, a nut for attaching a main terminal and an external bus bar is embedded in a so-called insert case in which a terminal is insert-molded in a resin case. However, in the case of the TM type module as in the present invention, it is extremely difficult to realize this structure. Therefore, instead of the nut, M6 bolts 109 are inserted and fixed to the main terminals 106, 107, 108 having a thickness of 1 mm, and the main terminals face upward on the sealing regions 102, 103, 104 with respect to the bolts 109. It is bent like so. By adopting this structure, the module 100 can be miniaturized, and at the same time, the main terminal is bent on the internal terminal, so that low inductance can be realized by the effect of canceling the magnetic flux.

  Example 2 will be described with reference to FIG. In the first embodiment, a TM resin flow region 101 is provided between the sealing regions 102, 103, and 104 divided for each of the U, V, and W phases, and the mold pressure in the V phase sealing region 103 into which the mold is injected. It was the structure which prevents that becomes excessive. In this embodiment, the size of each sealing region is changed to prevent the mold pressure only in a specific region from becoming excessive.

  FIG. 4 is a schematic plan view of a TM type three-phase IGBT module 500 as in FIG. The rated voltage / current is the same as that of the first embodiment, and the configuration of the first embodiment is basically followed, for example, that a three-phase inverter circuit composed of a copper-coated silicon nitride substrate is mounted on the copper base 504. ing. The feature is the shape of the sealing regions 501, 502, and 503 of the U, V, and W phases.

  In the case of this structure as in Example 1 described above, it is easiest to inject resin from the vicinity of the V-phase sealing region 502 in view of symmetry. In this case, since the sealing region 502 is most easily injected, the sealing region 502 is made larger than the other regions 501 and 503 in order to match the filling time with the sealing regions 501 and 503 on both sides. Although optimization of the TM resin injection path (runner) and the resin injection speed may be necessary together, the width of each phase separation region 506 is 1 mm without the resin flow region 101 of Example 1 even in this structure. We were able to.

  Example 3 will be described with reference to FIG. In Examples 1 and 2, the sealing region divided by the device of the sealing shape is TM in a narrow interval and collectively. In the present embodiment, the above is realized by means of a manufacturing method.

  5 is a schematic plan view of a TM type three-phase IGBT module 600 as in FIG. The contents of the module, such as the rating, are the same as in the first and second embodiments. Further, the IGBT module 600 is schematically illustrated below the resin injection port 606 and the runner 607, and shows the structure formed in the TM mold and the structure of the finished mold product. It is drawn together schematically. As described so far, an object of the present invention is to suppress variation in filling pressure of the divided sealing regions 601, 602, and 603. Therefore, it can be realized by designing the runner drastically and equalizing the time for completing the filling of each region. In this embodiment, the runners 608, 609, and 610 to the respective regions 601, 602, and 603 are changed, and the resin flow analysis is performed to analyze the state of resin filling in each region. As a result, the width of the runners 608, 609, 610 is fixed to 5 mm, the number of runners 609 in the region 602 where resin is easily injected is set to two, and the number of other runners 608, 610 is set to three. Uniformity was achieved. Therefore, the shape of the TM-type three-phase IGBT module could be a structure in which only the resin flow region 101 was deleted from the IGBT module 100 shown in FIG. In other words, the interval width was set to 1 mm, and it was possible to realize a miniaturization comparable to the case of not dividing.

  Example 4 will be described with reference to FIG. In the present embodiment, as in the case of the third embodiment, the structure of the present invention is realized by means of a manufacturing method.

  The upper part of FIG. 6 shows a schematic plan view of the TM type three-phase IGBT module 700 as in FIG. 5, and the lower part of this schematic plan view shows a schematic diagram of the runner of the mold. In Example 3, the number of runners in each phase was designed to achieve uniform filling of each phase. In the present embodiment, this is realized by changing the width of the runner. The TM resin injected from the resin injection port 706 is injected by the runners 708, 709, and 710 to the respective phases via the runner 707. In this embodiment, the number of runners for each phase is fixed at 3 and the width of the runner 709 in the V-phase sealing region 702 that is easily injected is 3 mm, and the runners 708 in the U and W phase sealing regions 701 and 703 are The cross-sectional area is changed by setting the width of 710 to 5 mm. By setting it as such a runner shape, the substantially uniform filling was realizable and the objective of this invention was achieved.

  In a structure in which a large capacity three-phase IGBT module is sealed with an epoxy resin by a transfer mold, the following can be realized by the present invention. Without sacrificing the miniaturization of the three-phase module, it can be firmly attached at a plurality of locations on the metal base as in the past. In addition, the epoxy resin sealing can realize the distortion and stress distribution of the built-in member adhesion portion, so that the module can be remarkably highly reliable and have a long service life. The above advantages can be expected to be applied to power semiconductor modules that will be used in higher temperature environments in the future such as HEV applications. Furthermore, the extension of the lifetime means that the temperature amplitude during operation can be increased, which means that the power semiconductor element can be miniaturized, and the cost and size of the power semiconductor module can be reduced.

It is explanatory drawing (appearance surface schematic diagram) which showed the basic structure of this invention. Example 1 It is explanatory drawing (appearance side schematic diagram) which showed the basic structure of this invention. Example 1 It is explanatory drawing (interior view schematic diagram) which showed the basic structure of this invention. Example 1 It is explanatory drawing (appearance surface schematic diagram) which showed other this invention structure. (Example 2) It is explanatory drawing (appearance surface schematic diagram and conceptual diagram of a runner) which showed the molding method of this invention. (Example 3) It is explanatory drawing (appearance surface schematic diagram and conceptual diagram of a runner) which showed the molding method of this invention. Example 4

Explanation of symbols

100, 300, 500, 600, 700 IGBT module 101 Transfer mold resin flow area 102, 501, 601, 701 Sealing area (U phase)
103, 502, 602, 702 Sealing region (V phase)
104,503,603,703 Sealing region (W phase)
105,504,604,704 Copper base 106 Main terminal (power supply terminal)
107 Main terminal (ground terminal)
108 Main terminal (Output (U) terminal)
109 Bolt 110 Control terminal 111, 505, 605, 705 Through hole 112, 506, 611, 711 Separation region 606, 706 Resin inlet 607, 707 Runner 608, 708 Runner to U phase region 609, 709 To V phase region Runner 610, 710 Runner to W phase region 301 Transfer mold resin 302, 403 IGBT chip 303, 404 Diode chip 304 IGBT adhesive solder layer 305 Diode adhesive solder layer 306 Module mounting hole 307, 308 Copper heat spreader 309 Insulating resin layer 310 Insulating resin Layer protection copper plate 311 Main terminal 400 Internal structure 401 Groove 402 Silicon nitride substrate 405 Al wire 406 Copper base protrusion

Claims (12)

  1. A plurality of power semiconductor elements for switching current are bonded and electrically connected to form a metal circuit pattern to form a power semiconductor circuit, an insulating layer to which the metal circuit pattern is bonded, bonded to the insulating layer, In a power semiconductor module comprising a metal base serving as a heat dissipation means of the power semiconductor element,
    A plurality of the power semiconductor circuits are present on one metal base, and the power semiconductor circuit is divided into two or more regions and sealed with epoxy resin, and between the divided sealing regions, A power semiconductor module, wherein the power semiconductor module is in contact with the metal base surface and partially connected with the sealing epoxy resin.
  2. In claim 1,
    The power semiconductor module according to claim 1, wherein a width of the region that partially connects the sealing regions is 1/10 or less of a width of the sealing region in which the connection region is formed.
  3. In claim 1 or 2,
    The insulating layer is a metal-bonded ceramic substrate having a metal circuit pattern on the front surface and a metal plate for solder bonding on the back surface, and the metal base is a copper base containing copper as a main component. Semiconductor module.
  4. In one of claims 1, 2 and 3,
    The plurality of power semiconductor circuits are U, V, and W phase circuits constituting a three-phase inverter, and each U, V, and W phase circuit is divided and sealed with epoxy resin, and sealed U, V, and W A power semiconductor module, wherein phase circuits are partially connected by the sealing epoxy resin.
  5. In claim 3 or 4,
    The power semiconductor module, wherein the metal-clad ceramic substrate is a copper-clad silicon nitride substrate.
  6. In one of claims 3, 4 and 5,
    Each U, V, W phase circuit is formed of one or two ceramic substrates, and is divided into one or two ceramic substrates and sealed with an epoxy resin. Power semiconductor module.
  7. In one of claims 1 to 6,
    The power semiconductor module is characterized in that the sealing means of the power semiconductor module is a transfer mold.
  8. A plurality of power semiconductor elements for switching current are bonded and electrically connected to form a metal circuit pattern to form a power semiconductor circuit, an insulating layer to which the metal circuit pattern is bonded, bonded to the insulating layer, In a power semiconductor module comprising a metal base serving as a heat dissipation means of the power semiconductor element,
    A plurality of the power semiconductor circuits exist on one metal base, and the power circuit is divided into three or more regions and sealed with epoxy resin, and the size of the sealing region in the center is The power semiconductor module is larger than the sealing regions at both ends.
  9. In claim 8,
    The plurality of power semiconductor circuits are U, V, and W phase circuits constituting a three-phase inverter, and only the sealing region of the V phase circuit disposed in the center is sealed on both sides of the U and W phase circuits. A power semiconductor module characterized by being larger than the region.
  10. A plurality of power semiconductor elements for switching current are bonded and electrically connected to form a metal circuit pattern to form a power semiconductor circuit, an insulating layer to which the metal circuit pattern is bonded, bonded to the insulating layer, A metal base serving as a heat dissipation means of the power semiconductor element,
    In the method of manufacturing a power semiconductor module, a plurality of the power semiconductor circuits are present on one metal base, and the power semiconductor circuit is divided into three or more regions and transfer molded with an epoxy resin.
    A method for producing a power semiconductor module, characterized in that a cross-sectional area of a gate for injecting transfer mold resin into a central sealing region is smaller than a cross-sectional area of a gate in both end sealing regions.
  11. A plurality of power semiconductor elements for switching current are bonded and electrically connected to form a metal circuit pattern to form a power semiconductor circuit, an insulating layer to which the metal circuit pattern is bonded, bonded to the insulating layer, A plurality of power semiconductor circuits on one metal base, and the power semiconductor circuit is divided into three or more regions and is made of epoxy resin. In the manufacturing method of the power semiconductor module to be transfer molded,
    A method of manufacturing a power semiconductor module, wherein the number of gates into which transfer mold resin is injected into a central sealing region is smaller than the number of gates in both sealing regions.
  12. In claim 10 or 11,
    The power semiconductor circuit is a U, V, W phase circuit that constitutes a three-phase inverter, and the insulating layer is a copper-plated silicon nitride substrate, which is transfer-molded for each U, V, W phase circuit. The manufacturing method of the characteristic power semiconductor module.
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