CN104241209A - Special power module for outdoor power source - Google Patents
Special power module for outdoor power source Download PDFInfo
- Publication number
- CN104241209A CN104241209A CN201410518279.2A CN201410518279A CN104241209A CN 104241209 A CN104241209 A CN 104241209A CN 201410518279 A CN201410518279 A CN 201410518279A CN 104241209 A CN104241209 A CN 104241209A
- Authority
- CN
- China
- Prior art keywords
- lead frame
- chip
- heat
- power
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
The invention discloses a special power module for an outdoor power source. Lead frames, a control chip, a thermistor, a power chip, a diode and meal wires are subjected to one-time plastic package by plastic materials to form an integral special power module; a heat radiation substrate is positioned at the bottom of the package, and the thermistor, the power chip and the diode are soldered onto the substrate through soldering fluxes; the power chip, the diode and the lead frame are in ultrasonically bonding connection through the metal wires, the lead frames are distributed on two sides of the heat radiation substrate, and the control chip is connected onto the lead frames through the metal lines. The special power module for the outdoor power source has the advantages that by means of one-time plastic package, a traditional twice package mode is changed fundamentally, and the module is high in strength, excellent in sealing performance and long in service life; due to the fact that only a few peripheral resistance-capacitance elements are needed, a whole system can be smaller in size, and accordingly comprehensive cost is lower.
Description
[technical field] the present invention relates to power supply, relates to a kind of outdoor use power supply special power module particularly.
[background technology] existing outdoor use power supply, be all generally adopt housing form to seal, its sealing effectiveness can weaken along with the prolongation of time.Main cause is that existing power device adopts the combination of discrete component form, or adopt the combination of silica gel sealing form, all need through secondary encapsulation, have that volume is large, lead-in wire is many, high frequency characteristics is poor, be difficult to waterproof, protection against the tide, dust-proof drawback, and then cause outdoor use power source life shorter.
[summary of the invention] the present invention is directed to the defect that above-mentioned existing outdoor use power package exists, and provides a kind of outdoor use power supply special power module.
This outdoor use power supply special power module, comprise lead frame, power chip, diode, control chip, thermistor, heat-radiating substrate, it is characterized in that, bare chip is adopted directly to do circuit covering on copper DBC substrate, copper framework is adopted to draw function pin, die casting envelope mould, realizes semiconductor circuit chip modularization; Described heat-radiating substrate is positioned at the bottom of encapsulation, and heat-radiating substrate is bonded directly on ceramic material by copper, and thermistor, power chip and diode weld on the substrate by solder; With metal wire, power chip, diode are connected by ultrasonic bonding with lead frame; Lead frame is distributed in heat-radiating substrate both sides, and the lead frame of side is parallel with heat-radiating substrate and higher or lower than this heat-radiating substrate; The lead frame of opposite side is with heat-radiating substrate parallel contact and welded by solder; Control chip is close to lead frame, and control chip is connected on lead frame by metal wire; Lead frame, control chip, thermistor, power chip, diode, the disposable plastic packaging of metal wire are a special power integral module by capsulation material.
The angle of described lead frame is 60-80 degree, and year pin of lead frame is positioned at the outside of plastic packaging module.
The invention has the beneficial effects as follows: 1, circuit base plate adopts the DBC ceramic substrate of photoetching technique, rapid heat dissipation, power capability strengthen; 2, adopt the leadframe technologies of ultrasonic bonding, topology layout flexible compact, volume reduces greatly; 3, adopt plastic packaging one-shaping technique, fundamentally change traditional secondary encapsulation pattern, module strength is high, and sealing characteristics is very good, the long service life of whole power model; 4, module of the present invention can add various control chip, and as MCU, dsp chip, can be applicable in all kinds of power supply product, especially outdoor products advantage is more obvious; 5, module periphery of the present invention only needs a small amount of resistance capacitance element, and the application of whole system size can be less, and therefore integrated cost is lower.
[accompanying drawing explanation]
Fig. 1 is modular structure cross sectional representation of the present invention
Fig. 2 is the application schematic diagram of module of the present invention
Fig. 3 is power module diagram of the present invention
Fig. 4 is existing general circuit sealing effectiveness schematic diagram
In Fig. 1: 1, metal wire, 2, control chip, 3, thermistor, 4, power chip, 5, diode, 6, metal wire, 7, capsulation material, 8, heat-radiating substrate, 9, solder, 10, lead frame.
[embodiment] is described below enforcement of the present invention below in conjunction with accompanying drawing:
With reference to accompanying drawing 1, in figure, heat-radiating substrate 8 is positioned at the bottommost of this encapsulation, its bottom surface is directly exposed to outside, because substrate is a kind of technology be bonded directly to by copper on ceramic material, so directly thermistor 3, power chip 4 and diode 5 can be welded on heat-radiating substrate 8 by solder 9, the amount of heat that power chip 4 is produced at work just can directly be distributed by substrate 8, can solve most important heat dissipation problem in power model well; With metal wire 6, power chip 4, diode 5 are coupled together by ultrasonic bonding with lead frame 10 simultaneously, thus realize being electrically connected.
Lead frame 10 is distributed in heat-radiating substrate 8 both sides, and the angle of lead frame 10 is 80 degree, can increase the mechanical strength of lead frame 10 and the bonding strength of solder joint, and year pin of lead frame 10 is positioned at the outside of plastic packaging module.
The lead frame 10 of side is parallel with heat-radiating substrate 8 and higher than this heat-radiating substrate 8, control chip 2 is close to lead frame 10, and control chip 2 is connected on lead frame 10 by metal wire 1, thus realizes being electrically connected.
The lead frame 10 of opposite side is with heat-radiating substrate 8 parallel contact and welded by solder 9; By metal wire 6, control chip 2 or power chip 4 are connected with lead frame 10, thus realize electric signal transmission.
Capsulation material 7 is made up of the epoxy-plastic packaging material of extensive use, and it is by the lead frame 10 of inside, control chip 2, thermistor 3, power chip 4, diode 5, metal wire 1, metal wire 6, and disposable plastic packaging is a special power integral module; The internal structure of this encapsulation can be protected well not by the shock and vibration of external force, thus realize the semiconductor circuit chip modularization of die casting envelope mould.
Power module of the present invention is less than traditional plane packaging structure volume, saves the consumption of lead frame, thus reduces packaging cost.In addition, the power chip 4 of this power model is directly welded on heat-radiating substrate 8 by solder 9, and thermal resistance is lower, and heat radiation is better.
Claims (2)
1. an outdoor use power supply special power module, comprise lead frame, power chip, diode, control chip, thermistor, heat-radiating substrate, it is characterized in that, bare chip is adopted directly to do circuit covering on copper DBC substrate, copper framework is adopted to draw function pin, die casting envelope mould, realizes semiconductor circuit chip modularization; Described heat-radiating substrate is positioned at the bottom of encapsulation, and heat-radiating substrate is bonded directly on ceramic material by copper, and thermistor, power chip and diode weld on the substrate by solder; With metal wire, power chip, diode are connected by ultrasonic bonding with lead frame; Lead frame is distributed in heat-radiating substrate both sides, and the lead frame of side is parallel with heat-radiating substrate and higher or lower than this heat-radiating substrate; The lead frame of opposite side is with heat-radiating substrate parallel contact and welded by solder; Control chip is close to lead frame, and control chip is connected on lead frame by metal wire; Lead frame, control chip, thermistor, power chip, diode, the disposable plastic packaging of metal wire are a special power integral module by capsulation material.
2. a kind of outdoor use power supply special power module according to claim 1, it is characterized in that, the angle of described lead frame is 60-80 degree, and year pin of lead frame is positioned at the outside of plastic packaging module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410518279.2A CN104241209A (en) | 2014-10-02 | 2014-10-02 | Special power module for outdoor power source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410518279.2A CN104241209A (en) | 2014-10-02 | 2014-10-02 | Special power module for outdoor power source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104241209A true CN104241209A (en) | 2014-12-24 |
Family
ID=52229043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410518279.2A Pending CN104241209A (en) | 2014-10-02 | 2014-10-02 | Special power module for outdoor power source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104241209A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106558567A (en) * | 2015-09-29 | 2017-04-05 | 比亚迪股份有限公司 | SPM and preparation method thereof |
| WO2019228517A1 (en) * | 2018-05-31 | 2019-12-05 | 南昌欧菲生物识别技术有限公司 | Circuit board assembly, photoelectric module, depth camera and electronic device |
| WO2021014007A1 (en) | 2019-07-25 | 2021-01-28 | Abb Power Grids Switzerland Ag | Power semiconductor module |
-
2014
- 2014-10-02 CN CN201410518279.2A patent/CN104241209A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106558567A (en) * | 2015-09-29 | 2017-04-05 | 比亚迪股份有限公司 | SPM and preparation method thereof |
| CN106558567B (en) * | 2015-09-29 | 2020-03-31 | 比亚迪股份有限公司 | Intelligent power module and manufacturing method thereof |
| WO2019228517A1 (en) * | 2018-05-31 | 2019-12-05 | 南昌欧菲生物识别技术有限公司 | Circuit board assembly, photoelectric module, depth camera and electronic device |
| WO2021014007A1 (en) | 2019-07-25 | 2021-01-28 | Abb Power Grids Switzerland Ag | Power semiconductor module |
| DE112020003541T5 (en) | 2019-07-25 | 2022-06-09 | Hitachi Energy Switzerland Ag | power semiconductor module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141224 |