CN103779315A - Package structure of radiating integrated power module - Google Patents

Abstract

A packaging structure for a heat dissipation integrated power module, which mainly includes: a substrate, an insulated gate bipolar transistor and a chip part of a diode, an insulating substrate, a power terminal, a signal terminal, an aluminum wire, a plastic shell, a silicone gel, a heat sensitive resistors, heat dissipation and other components; the chip part and power terminal of the insulated gate bipolar transistor and diode are welded by ultrasonic waves, and then welded together on the conductive copper layer of the insulating substrate by soft lead welding; the insulated gate bipolar The chip parts of polar transistors and diodes, the chip parts of each insulated gate bipolar transistor and diode, and the corresponding conductive layer of the insulating substrate are all electrically connected by aluminum wire bonding; the substrate is an integrated heat dissipation substrate The heat dissipation integrated substrate is bonded to the plastic casing through a sealant; the chip part of the insulated gate bipolar transistor and the diode, the insulating substrate, the power terminal, the signal terminal, the aluminum wire, and the thermistor are covered with layers that can improve various Pressure-resistant insulating silicone gel between components.

Description

A package structure of integrated heat dissipation power module

technical field

The present invention relates to a packaging structure of a heat dissipation integrated power module, which belongs to the technical field of power module packaging in power electronics.

Background technique

At present, insulated gate bipolar transistor (IGBT) modules are more and more widely used in inverters, inverter welding machines, induction heating, rail transit, wind energy, solar power generation and other fields, but especially for power modules, the structure and circuit Reliability requirements are higher.

Contents of the invention

The object of the present invention is to overcome the deficiencies in the prior art, and provide a packaging structure of a heat dissipation integrated power module with reasonable structure, firm connection, good heat dissipation effect, long service life and good reliability.

The purpose of the present invention is accomplished through the following technical solutions. The packaging structure of the heat dissipation integrated power module mainly includes: a substrate, an insulated gate bipolar transistor and a chip part of a diode, an insulating substrate, a power terminal, a signal Terminals, aluminum wires, plastic shells, silicone gel, thermistors, heat dissipation integration and other components; the chip part and power terminals of the insulated gate bipolar transistor and diode are welded by ultrasonic welding, and then welded together by soft lead welding On the conductive copper layer of the insulating substrate; aluminum wires are passed between the chip parts of the insulated gate bipolar transistors and diodes, and between the chip parts of each insulated gate bipolar transistor and diodes and the corresponding conductive layer of the insulating substrate bonding electrical connection; the substrate is an integrated substrate for heat dissipation, and the integrated substrate for heat dissipation is bonded to the plastic casing through a sealant; the chip part of the insulated gate bipolar transistor and the diode, the insulating substrate, the power terminal, the signal Terminals, aluminum wires, and thermistors are covered with insulating silicone gel that can improve the withstand voltage between the components.

The power terminals and signal terminals are made of pure copper or copper alloy material, and the surface layer is bare copper or electroplated gold, nickel, tin can be welded metal materials.

The plastic shell is made of PBT, PPS and nylon materials with high temperature resistance and good insulation performance.

The chip part of the insulated gate bipolar transistor and the diode is connected to the insulating substrate by welding, the power terminal and the signal terminal are connected to the insulating substrate by ultrasonic waves or welding, and the thermistor and the insulating substrate are connected by welding. The welding material used is one of the Sn-containing materials in Snpb, SnAg, SnAgCu, and PbSnAg, and the maximum welding temperature is controlled between 100-400°C.

The power terminals and signal terminals are partly wrapped by injection molding; the power terminals are distributed on both sides of the module and located on the three injection molding sides of the module.

The heat dissipation integrated substrate is made of pure aluminum or aluminum alloy material or pure copper or copper alloy material; the heat dissipation integrated substrate is provided with a cooling medium flow channel including an inlet at one end and an outlet at the other end.

The heat-dissipating integrated substrate is connected to the insulating substrate by welding, and one of Sn-containing materials among Snpb, SnAg, SnAgCu, and PbSnAg is used for welding, and the maximum welding temperature is controlled between 100-400°C.

The insulating substrate and the heat dissipation integrated substrate are connected by laser welding, and the welding includes multi-point welding and single-point welding.

The insulating substrate and the heat dissipation integrated substrate are connected through high temperature sintering, and the sintering includes oxide sintering.

The insulating substrate and the integrated substrate for welding and heat dissipation are connected by high-temperature fusion welding, and the welding includes basic metal fusion welding.

The invention wraps the power terminal and the signal terminal by partial injection molding of the injection molding shell, improves the power terminal and the signal terminal to resist thermal stress and external installation attraction, and improves the overall firmness of the power terminal and the signal terminal. Through the method of direct ultrasonic welding of power terminals, signal terminals and insulating substrates, the fatigue defects of traditional process terminal welding are eliminated, the reliability of power terminals, signal terminals and insulating substrates is improved, and highly reliable insulated gate bipolar transistor modules are manufactured.

Description of drawings

FIG. 1 is a schematic diagram of the circuit structure of an IGBT module according to the present invention.

FIG. 2 is a schematic diagram of an IGBT module according to the present invention.

FIG. 3 is a partially enlarged schematic diagram of A in FIG. 2 .

Detailed ways:

The present invention will be further described below in conjunction with the accompanying drawings and embodiments. As shown in Figures 1-3, the packaging structure of the heat dissipation integrated power module according to the present invention mainly includes: a substrate 1, an insulated gate bipolar transistor and a chip part 3 of a diode, an insulating substrate 2, a power terminal 5, a signal Terminal 7, aluminum wire 6, plastic casing 8, silicone gel 4, thermistor 9, heat dissipation integration and other components; the chip part 3 and power terminal 5 of the insulated gate bipolar transistor and diode are welded by ultrasonic waves, and Together, they are welded together on the conductive copper layer of the insulating substrate 2 by soft lead soldering; between the chip parts 3 of the insulated gate bipolar transistors and diodes, between the chip parts 3 of each insulated gate bipolar transistor and diodes and the insulating substrate 2 Corresponding conductive layers are electrically connected by bonding aluminum wires 6; the substrate 1 is an integrated heat dissipation substrate 1, and the integrated heat dissipation substrate 1 is bonded to the plastic shell 8 through a sealant; The chip part 3, insulating substrate 2, power terminal 5, signal terminal 7, aluminum wire 8, and thermistor 9 of the polar transistor and diode are covered with insulating silicone gel 4 that can improve the withstand voltage between the original components.

The power terminal 5 and the signal terminal 7 are made of pure copper or copper alloy material, and the surface layer is bare copper or one of electroplated gold, nickel and tin weldable metal materials; the plastic shell 8 is made of PBT with high temperature resistance and good insulation performance. , PPS, nylon material.

The chip part 3 of the insulated gate bipolar transistor and the diode is connected to the insulating substrate 2 by welding, the power terminal 5 and the signal terminal 7 are connected to the insulating substrate 2 by ultrasonic waves or welding, and the thermistor 9 and the insulating substrate 2. Connect by welding. The welding material used is one of the Sn-containing materials in Snpb, SnAg, SnAgCu, and PbSnAg. The maximum welding temperature is controlled between 100-400°C.

The power terminals 5 and signal terminals 7 are partly wrapped by the injection molding shell 8; the power terminals are distributed on both sides of the module and located on the three injection molding sides of the module.

The heat dissipation integrated substrate 1 is made of pure aluminum or aluminum alloy material or pure copper or copper alloy material; the heat dissipation integrated substrate 1 is provided with a cooling medium flow channel 101 including an inlet at one end and an outlet at the other end.

The heat dissipation integrated substrate 1 is connected to the insulating substrate 2 by welding, and the welding adopts one of Sn-containing materials among Snpb, SnAg, SnAgCu, and PbSnAg, and the maximum welding temperature is controlled between 100-400°C.

The insulating substrate 2 is connected to the heat dissipation integrated substrate 1 through laser welding, and the welding includes multi-point welding and single-point welding.

The insulating substrate 2 is connected to the heat dissipation integrated substrate 1 through high temperature sintering, and the sintering includes oxide sintering.

The insulating substrate 2 and the integrated substrate for welding and heat dissipation 1 are connected by high-temperature fusion welding, and the welding includes fusion welding of base metals.

Embodiment: As shown in Fig. 2-3, the present invention includes an insulated gate bipolar transistor and a chip part 3 of a diode, an insulating substrate (DBC) 2, a power terminal 5, a signal terminal 7, an aluminum wire 6, a plastic casing 8, a silicon Gel 4, thermistor 9, heat dissipation integrated substrate 1 and other components; the chip part 3 and power terminal 5 of the insulated gate bipolar transistor and diode are welded by ultrasonic welding, and then welded on the insulating substrate (DBC) 2 by soft lead welding On the conductive copper layer; between each chip (insulated gate bipolar transistor and the chip part 3 of the diode, between the chip part 3 of each chip (insulated gate bipolar transistor and diode) and the corresponding conductive layer of the insulating substrate (DBC) 2 The electrical connection is realized through aluminum wire 6 bonding; the plastic shell 8 and the insulating substrate (DBC) 2 are bonded by a sealant; the chip part 3 of the insulated gate bipolar transistor and the diode, the insulating substrate (DBC) 2, the power Terminal 5, signal terminal 7, aluminum wire 8, thermistor 9 and other components are covered with insulating silicone gel 4 to increase the withstand voltage between the components.

Claims (9)

1. A packaging structure for a heat dissipation integrated power module, which mainly includes: a substrate, an insulated gate bipolar transistor and a chip part of a diode, an insulating substrate, a power terminal, a signal terminal, an aluminum wire, a plastic shell, silicone gel, Thermistor and other components; the chip part (3) and power terminal (5) of the insulated gate bipolar transistor and diode are welded by ultrasonic waves, and then welded together to the conductive copper layer of the insulating substrate (2) by soft lead welding above; between the chip part (3) of the insulated gate bipolar transistor and the diode, and between the chip part (3) of each insulated gate bipolar transistor and the diode and the corresponding conductive layer of the insulating substrate (2). Aluminum wires (6) are bonded for electrical connection; the substrate (1) is an integrated substrate for heat dissipation, and the integrated substrate for heat dissipation (1) is bonded to the plastic casing (8) through a sealant; the bipolar insulation grid The chips (3), insulating substrate (2), power terminals (5), signal terminals (7), aluminum wires (8) and thermistors (9) of transistors and diodes are covered with coatings to improve the resistance between the components. Pressed insulating silicone gel (4). 2. The packaging structure of the heat dissipation integrated power module according to claim 1, characterized in that the power terminals (5) and signal terminals (7) are made of pure copper or copper alloy materials, and the surface layer of bare copper or Gold, nickel and tin can be electroplated as one of the weldable metal materials; the plastic shell (8) is made of PBT, PPS and nylon materials with high temperature resistance and good insulation performance. 3. The packaging structure of the heat dissipation integrated power module according to claim 1, characterized in that the chip part (3) of the insulated gate bipolar transistor and the diode and the insulating substrate (2) are connected by welding, and the The power terminal (5) and signal terminal (7) are connected to the insulating substrate (2) by ultrasonic or welding, and the thermistor (9) and the insulating substrate (2) are connected by welding. The welding materials used are Snpb, One of the Sn-containing materials among SnAg, SnAgCu, and PbSnAg. The maximum welding temperature is controlled between 100-400°C. 4. The packaging structure of the heat dissipation integrated power module according to claim 1, 2 or 3, characterized in that the power terminals (5) and signal terminals (7) are partly wrapped by injection molding shells (8); The power terminals (5) are distributed on both sides of the module and located on the three injection molded sides of the module. 5. The packaging structure of the heat dissipation integrated power module according to claim 1, characterized in that the heat dissipation integrated substrate is made of pure aluminum or aluminum alloy material or pure copper or copper alloy material; A cooling medium channel (101) with one inlet and one outlet. 6. The packaging structure of the heat dissipation integrated power module according to claim 1 or 5, characterized in that the heat dissipation integrated substrate is connected to the insulating substrate (2) by welding, and the welding adopts Snpb, SnAg, SnAgCu, PbSnAg One of the Sn-containing materials, the maximum welding temperature is controlled between 100-400 °C. 7. The packaging structure of the heat dissipation integrated power module according to claim 1 or 5, characterized in that the heat dissipation integrated substrate and the insulating substrate (2) are connected by laser welding, and the welding includes multi-point welding and single-point welding welding. 8. The packaging structure of the heat dissipation integrated power module according to claim 1 or 5, characterized in that the heat dissipation integrated substrate and the insulating substrate (2) are connected by high temperature sintering, and the sintering includes oxide sintering. 9. The packaging structure of the heat dissipation integrated power module according to claim 1 or 5, wherein the heat dissipation integrated substrate and the insulating substrate 2 are connected by high-temperature fusion welding, and the welding includes basic metal fusion welding.

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