JP6124810B2 - Power module - Google Patents

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Publication number
JP6124810B2
JP6124810B2 JP2014005583A JP2014005583A JP6124810B2 JP 6124810 B2 JP6124810 B2 JP 6124810B2 JP 2014005583 A JP2014005583 A JP 2014005583A JP 2014005583 A JP2014005583 A JP 2014005583A JP 6124810 B2 JP6124810 B2 JP 6124810B2
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Prior art keywords
terminal
ceramic substrate
conductor layer
case
bridging member
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JP2014005583A
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Japanese (ja)
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JP2015133462A (en
Inventor
藤野　純司
純司 藤野
三紀夫 石原
三紀夫 石原
山田　浩司
浩司 山田
正行 眞舩
正行 眞舩
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2014005583A priority Critical patent/JP6124810B2/en
Publication of JP2015133462A publication Critical patent/JP2015133462A/en
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Publication of JP6124810B2 publication Critical patent/JP6124810B2/en
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Inverter Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

この発明は、パワーモジュールに関し、特に、端子が樹脂で封止されているパワーモジュールに関する。   The present invention relates to a power module, and particularly to a power module in which terminals are sealed with resin.

パワーモジュールは、発電と送電の分野だけではなく、効率的なエネルギーの利用と再生を目指すあらゆる場面で利用されている。家電に搭載されるモジュールについては、小型軽量であるとともに多品種に対応できる高い生産性と高い信頼性が求められる。一方、ＳｉＣ半導体は動作温度が高く、効率に優れている点で、今後のパワーモジュールの主流半導体素子となることが期待されている。このためパワーモジュールはＳｉＣ半導体に適用できるパッケージ形態であることも求められている。   Power modules are used not only in the fields of power generation and transmission, but also in all situations where efficient energy use and regeneration are aimed. Modules mounted on home appliances are required to have high productivity and high reliability that are small and light and can be used in a wide variety of products. On the other hand, SiC semiconductors are expected to become mainstream semiconductor elements for future power modules because of their high operating temperature and excellent efficiency. For this reason, the power module is also required to have a package form applicable to a SiC semiconductor.

パワーモジュールの普及は、産業機器から家電情報端末まであらゆる製品に進展している。電力半導体素子の信号端子は、放熱の必要がないので、通常、ケースの外周部に配置される。信号端子はインダクタンスの低減を目的に中央部に配置されている（例えば特許文献１）。   The spread of power modules has progressed to every product from industrial equipment to home appliance information terminals. Since the signal terminals of the power semiconductor elements do not need to be radiated, they are usually arranged on the outer periphery of the case. The signal terminal is arranged at the center for the purpose of reducing inductance (for example, Patent Document 1).

特許第4829690号公報Japanese Patent No. 4829690

パワーモジュールは、高電圧と大電流を扱う半導体の特徴を備えている。回路を絶縁封止するため、パワーモジュールのケースはシリコーンゲルなどで充填される。多くの場合、リードフレームは金型を用いてトランスファモールド封止されている。シリコーンゲル自体は柔軟なため、ゲルの上面はエポキシ樹脂などで覆い固められる。トランスファモールドを行うには工期が長く高額な金型が必要になる。そこで、ケース内に樹脂を流し込んだ後に加熱硬化させることで絶縁封止を実現するダイレクトポッティング封止が検討され始めている。   The power module has the characteristics of a semiconductor that handles high voltage and large current. In order to insulate and seal the circuit, the case of the power module is filled with silicone gel or the like. In many cases, the lead frame is transfer-molded using a mold. Since the silicone gel itself is flexible, the upper surface of the gel is covered with an epoxy resin or the like. To perform transfer molding, a long construction period and an expensive mold are required. Therefore, direct potting sealing that realizes insulating sealing by pouring resin into the case and then heat-curing has begun to be studied.

ダイレクトポッティング封止は、金型が不要で、ゲル封止に比較すると信頼性に優れているが、封止樹脂のケースに対する密着力は低い。樹脂の硬化収縮や基材との膨張係数ミスマッチが存在すると封止樹脂とケースとの界面で樹脂の剥離が生じる。封止樹脂の剥離はケースの外周部に発生しやすく、信号端子に接続するワイヤボンドには破断が引き起こされる。   Direct potting sealing does not require a mold and is more reliable than gel sealing, but the adhesion of the sealing resin to the case is low. If there is a cure shrinkage of the resin or an expansion coefficient mismatch with the substrate, the resin peels off at the interface between the sealing resin and the case. The peeling of the sealing resin is likely to occur on the outer periphery of the case, and the wire bond connected to the signal terminal is broken.

信号端子は放熱が不要にも関わらずセラミック基板や金属基板を占有することとなり、大型化や重量増大の要因となっている。また、信号端子はワイヤボンドツールとの干渉を防ぐためにある程度の大きさが必要であり、パワーモジュールを小型化する際の障壁となっている。ワイヤボンドを、信号端子から電力半導体素子の順に打つことで、ケースの信号端子を小さくすることはできるが、電力半導体素子の上でワイヤを切断することによるカッターの衝撃で電力半導体素子が破壊することが懸念されている。   The signal terminal occupies a ceramic substrate or a metal substrate even though it does not need to dissipate heat, which is a factor in increasing the size and weight. Further, the signal terminal needs to have a certain size in order to prevent interference with the wire bond tool, which is a barrier when the power module is downsized. The signal terminal of the case can be made smaller by hitting wire bonds in order from the signal terminal to the power semiconductor element, but the power semiconductor element is destroyed by the impact of the cutter by cutting the wire on the power semiconductor element. There are concerns.

この発明は、以上のような課題を鑑みて成されたもので、パワーモジュールにおける出力端子の信頼性を向上することを目指している。   The present invention has been made in view of the above-described problems, and aims to improve the reliability of output terminals in a power module.

本発明に係るパワーモジュールは、第１主面には外周に第１余白部を残して第１導体層が形成されており、第２主面には外周に第２余白部を残して第２導体層が形成されているセラミック基板と、セラミック基板の第２導体層に固定されているダイオードと、制御電
極を有しセラミック基板の第２導体層に固定されているトランジスタと、セラミック基板の第２導体層に接続されている第１端子と、ダイオードおよびトランジスタを接続する第２端子と、トランジスタの制御電極とワイヤで接続されている第３端子と、第２端子に固定され第３端子を保持する絶縁性の第１橋渡し部材と、セラミック基板に固定され第１端子と第２端子を保持する絶縁性の第２橋渡し部材と、セラミック基板に接着され、ダイオードとトランジスタと第１端子と第２端子と第３端子と第１橋渡し部材と第２橋渡し部材を収容するケースと、ケースの内側に充填された封止樹脂部材と、を備え、第１端子および第２端子は一部が第２橋渡し部材に固定され、第３端子は先端が封止樹脂部材から突出していることを特徴とする。 In the power module according to the present invention, the first main surface has the first conductor layer formed on the outer periphery leaving the first margin, and the second main surface has the second margin on the outer periphery. A ceramic substrate on which a conductor layer is formed; a diode fixed to the second conductor layer of the ceramic substrate; a transistor having a control electrode and fixed to the second conductor layer of the ceramic substrate; A first terminal connected to the two conductor layers, a second terminal connecting the diode and the transistor, a third terminal connected to the control electrode of the transistor by a wire, and a third terminal fixed to the second terminal An insulating first bridging member to be held, an insulating second bridging member fixed to the ceramic substrate and holding the first terminal and the second terminal, and bonded to the ceramic substrate, the diode, the transistor, and the first terminal A case containing the second terminal, the third terminal, the first bridging member and the second bridging member, and a sealing resin member filled inside the case, wherein the first terminal and the second terminal are partially The third terminal is fixed to the second bridging member, and the tip of the third terminal protrudes from the sealing resin member .

ケースの周辺部から封止樹脂部材が硬化収縮や熱膨張係数差により剥離したとしても、橋渡し部材は第３端子（信号端子）を破断から保護することができる。   Even if the sealing resin member is peeled off from the periphery of the case due to curing shrinkage or a difference in thermal expansion coefficient, the bridging member can protect the third terminal (signal terminal) from breaking.

実施の形態１によるパワーモジュールの概念断面図である。1 is a conceptual cross-sectional view of a power module according to Embodiment 1. FIG. 実施の形態１によるパワーモジュールの概念上面図である。1 is a conceptual top view of a power module according to Embodiment 1. FIG. セラミック基板に電力半導体素子が接合された状態を表す平面図である。It is a top view showing the state by which the power semiconductor element was joined to the ceramic substrate. セラミック基板に電力半導体素子が接合された状態を表す断面図である。It is sectional drawing showing the state by which the power semiconductor element was joined to the ceramic substrate. セラミック基板に主端子が接合された状態を表している平面図である。It is a top view showing the state where the main terminal was joined to the ceramic substrate. セラミック基板がケースと固定されている状態を表す断面図である。It is sectional drawing showing the state by which the ceramic substrate is being fixed with the case. 実施の形態２によるパワーモジュールの概念断面図である。4 is a conceptual cross-sectional view of a power module according to Embodiment 2. FIG. 実施の形態２によるパワーモジュールの概念上面図である。6 is a conceptual top view of a power module according to Embodiment 2. FIG. 電力半導体素子に主端子が接合された状態を表す平面図である。It is a top view showing the state by which the main terminal was joined to the power semiconductor element. 実施の形態２によるパワーモジュールの別形態を示す概念上面図である。It is a conceptual top view which shows another form of the power module by Embodiment 2.

以下に本発明にかかるパワーモジュールの実施の形態を図面に基づいて詳細に説明する。なお、本発明は以下の既述に限定されるものではなく、本発明の要旨を逸脱しない範囲において適宜変更可能である。図において、同一符号が付与されている構成要素は、同一の、または、相当する構成要素を表している。   Embodiments of a power module according to the present invention will be described below in detail with reference to the drawings. In addition, this invention is not limited to the following description, In the range which does not deviate from the summary of this invention, it can change suitably. In the figure, the components given the same reference numerals represent the same or corresponding components.

実施の形態１．
図１は実施の形態１によるパワーモジュール１００を表す概念断面図である。ＩＧＢＴ（Insulated Gate Bipolar Transistor）１とダイオード２はＡｌＮ製のセラミック基板１１の上に搭載されている。ＩＧＢＴ１はトランジスタの一種である。セラミック基板１１の上面には銅製の回路導体層１２ａおよび回路導体層１２ｂが形成されている。ＩＧＢＴ１は回路導体層１２ａにはんだダイボンドによって接合されている。ダイオード２は回路導体層１２ｂにはんだダイボンドによって接合されている。パワーモジュール１００は、通常、セラミック基板１１の下面に形成されている回路導体層１３を使って冷却器にはんだ付けされるが、熱伝導性の良いグリスを用いて冷却器に装着することもできる。 Embodiment 1 FIG.
FIG. 1 is a conceptual sectional view showing a power module 100 according to the first embodiment. An IGBT (Insulated Gate Bipolar Transistor) 1 and a diode 2 are mounted on a ceramic substrate 11 made of AlN. The IGBT 1 is a kind of transistor. A copper circuit conductor layer 12 a and a circuit conductor layer 12 b are formed on the upper surface of the ceramic substrate 11. The IGBT 1 is joined to the circuit conductor layer 12a by solder die bonding. The diode 2 is joined to the circuit conductor layer 12b by solder die bonding. The power module 100 is usually soldered to the cooler using the circuit conductor layer 13 formed on the lower surface of the ceramic substrate 11, but can also be attached to the cooler using grease with good thermal conductivity. .

セラミック基板１１はＰＰＳ（Poly Phenylene Sulfide）樹脂製のケース５にシリコーン製の接着剤１０を用いて固定されている。ケース５の内側にはダイレクトポッティング封止樹脂部材１５が充填されている。ケース５とセラミック基板１１との隙間を接着剤１０で埋めることでダイレクトポッティング封止樹脂部材１５がケース５から漏れることを防止している。ケース５の内部にはＰＰＳ樹脂製またはＰＳ（Poly Styrene）樹脂製の橋渡し部材３が形成されている。ＰＰＳ樹脂およびＰＳ樹脂はともに絶縁物である。橋渡し部材３は大電流が流れる主端子６の上に固定されている。主端子６はＩＧＢＴ１とダイオード２を接続している。主端子６は片方の端部がケース５にインサートモールドされている。信号端子７は、先端がダイレクトポッティング封止樹脂部材１５から突出し、橋渡し部材３に固定されている。ワイヤ４は信号端子７とＩＧＢＴ１を接続している。ネジ止め端子６ａは主端子６の先端に形成されている。   The ceramic substrate 11 is fixed to a case 5 made of PPS (Poly Phenylene Sulfide) resin by using an adhesive 10 made of silicone. The inside of the case 5 is filled with a direct potting sealing resin member 15. The gap between the case 5 and the ceramic substrate 11 is filled with the adhesive 10 to prevent the direct potting sealing resin member 15 from leaking from the case 5. A bridging member 3 made of PPS resin or PS (Poly Styrene) resin is formed inside the case 5. Both the PPS resin and the PS resin are insulators. The bridging member 3 is fixed on the main terminal 6 through which a large current flows. The main terminal 6 connects the IGBT 1 and the diode 2. One end of the main terminal 6 is insert-molded in the case 5. The signal terminal 7 protrudes from the direct potting sealing resin member 15 and is fixed to the bridging member 3. The wire 4 connects the signal terminal 7 and the IGBT 1. The screw terminal 6 a is formed at the tip of the main terminal 6.

ＩＧＢＴ１とダイオード２を含む電力半導体素子は、珪素（Ｓｉ）によって形成したものの他、珪素に比べてバンドギャップが大きいワイドバンドギャップ半導体によって形成したものも好適に使用することができる。ワイドバンドギャップ半導体としては、炭化珪素（ＳｉＣ）、窒化ガリウム系材料またはダイヤモンドなどがある。ワイドバンドギャップ半導体を用いた場合、許容電流密度が高く、電力損失も低いため、電力半導体素子を用いた装置の小型化が可能となる。   As the power semiconductor element including the IGBT 1 and the diode 2, a power semiconductor element formed of a wide band gap semiconductor having a band gap larger than that of silicon can be suitably used in addition to that formed of silicon (Si). Examples of the wide band gap semiconductor include silicon carbide (SiC), a gallium nitride material, and diamond. When a wide bandgap semiconductor is used, the allowable current density is high and the power loss is low, so that a device using a power semiconductor element can be downsized.

図２は実施の形態１によるパワーモジュール１００を表す概念上面図である。主端子８（第１端子）はセラミック基板１１の回路導体層１２ｂに直接はんだ付けされている。主端子（第２端子）６はＩＧＢＴ１のソース電極１ａおよびダイオード２のアノード電極２ａに直接はんだ付けされている。回路導体層１２ａはＩＧＢＴ１のドレイン電極と接続されている。回路導体層１２ｂはダイオード２のカソード電極と接続されている。ここでは、ＩＧＢＴ１は４個の制御電極１ｂを有している。ＩＧＢＴ１の制御電極１ｂは４個の信号端子（第３端子）７とアルミ製のワイヤ４で個々に接続されている。ネジ止め端子８ａは主端子８の先端に形成されている。主端子８は、主端子６よりも長さが短く、幅が狭い。   FIG. 2 is a conceptual top view showing the power module 100 according to the first embodiment. The main terminal 8 (first terminal) is directly soldered to the circuit conductor layer 12 b of the ceramic substrate 11. The main terminal (second terminal) 6 is directly soldered to the source electrode 1 a of the IGBT 1 and the anode electrode 2 a of the diode 2. The circuit conductor layer 12a is connected to the drain electrode of the IGBT1. The circuit conductor layer 12 b is connected to the cathode electrode of the diode 2. Here, the IGBT 1 has four control electrodes 1b. The control electrode 1 b of the IGBT 1 is individually connected to four signal terminals (third terminals) 7 by aluminum wires 4. The screw terminal 8 a is formed at the tip of the main terminal 8. The main terminal 8 is shorter and narrower than the main terminal 6.

ダイレクトポッティング封止樹脂部材１５はケース５の内側に注入されていて、内部の部品を封止している。ケース５の内部には橋渡し部材３が形成されている。信号端子７は、個々に橋渡し部材３に、インサートモールドなどの方法で、固定されている。ネジ止め端子６ａおよびネジ止め端子８ａはケース５の外周部に形成されている。ネジ止め端子６ａは主端子６と一体化している。ネジ止め端子８ａは主端子８と一体化している。ネジ止め端子６ａとネジ止め端子８ａを使って、パワーモジュール１００を外部機器に接続する。信号端子７の幅は1.5mmとした。ネジ止め端子６ａおよびネジ止め端子８ａの幅は10mmとした。ケース５は、ダイオード２とＩＧＢＴ１と主端子６と主端子８と信号端子７と橋渡し部材３を収容している。   The direct potting sealing resin member 15 is injected inside the case 5 and seals internal components. A bridging member 3 is formed inside the case 5. The signal terminals 7 are individually fixed to the bridging member 3 by a method such as insert molding. The screw terminal 6 a and the screw terminal 8 a are formed on the outer periphery of the case 5. The screw terminal 6 a is integrated with the main terminal 6. The screw terminal 8 a is integrated with the main terminal 8. The power module 100 is connected to an external device using the screw terminal 6a and the screw terminal 8a. The width of the signal terminal 7 was 1.5 mm. The width of the screw terminal 6a and the screw terminal 8a was 10 mm. The case 5 houses the diode 2, the IGBT 1, the main terminal 6, the main terminal 8, the signal terminal 7, and the bridging member 3.

次に、パワーモジュール１００の製造方法を説明する。図３はセラミック基板１１に電力半導体素子（ＩＧＢＴ１およびダイオード２）が接合された状態を表す平面図である。セラミック基板１１の上側の第２主面には外周に余白部（第２余白部）１１ａを残して回路導体層１２ａおよび回路導体層１２ｂが形成されている。ＩＧＢＴ１は上面にソース電極１ａ（またはドレイン電極）と制御電極１ｂが形成されている。ダイオード２は上面にアノード電極２ａ（またはカソード電極）が形成されている。セラミック基板１１の上面に形成されている回路導体層１２ａおよび回路導体層１２ｂは、連通しており、そのパターン厚さを0.4mmとした。セラミック基板１１の大きさは40mm×25mmとし、厚さ0.635mmのものを用いた。ＩＧＢＴ１に形成されている４個の制御電極１ｂはゲート電極、温度センサー電極などを含む。ダイオード２の大きさは15mm×15mmとし、厚さ0.3mmのものを用いた。   Next, a method for manufacturing the power module 100 will be described. FIG. 3 is a plan view showing a state where power semiconductor elements (IGBT 1 and diode 2) are joined to the ceramic substrate 11. On the second main surface on the upper side of the ceramic substrate 11, a circuit conductor layer 12a and a circuit conductor layer 12b are formed leaving a blank portion (second blank portion) 11a on the outer periphery. The IGBT 1 has a source electrode 1a (or drain electrode) and a control electrode 1b formed on the upper surface. The diode 2 has an anode electrode 2a (or cathode electrode) formed on the upper surface. The circuit conductor layer 12a and the circuit conductor layer 12b formed on the upper surface of the ceramic substrate 11 communicate with each other, and the pattern thickness is set to 0.4 mm. The ceramic substrate 11 had a size of 40 mm × 25 mm and a thickness of 0.635 mm. The four control electrodes 1b formed on the IGBT 1 include a gate electrode, a temperature sensor electrode, and the like. The size of the diode 2 was 15 mm × 15 mm and the thickness was 0.3 mm.

図４はセラミック基板１１に電力半導体素子（ＩＧＢＴ１およびダイオード２）が接合された状態を表す側面図である。セラミック基板１１は片面にしか導体層が形成されていないとそりが大きくなるので、両面に導体層が形成されている。セラミック基板１１の下側の第１主面には外周に余白部（第１余白部）１１ｂを残して回路導体層１３が形成されている。ＩＧＢＴ１は回路導体層１２ａにはんだダイボンドによって接合されている。ダイオード２は回路導体層１２ｂにはんだダイボンドによって接合されている。   FIG. 4 is a side view showing a state in which power semiconductor elements (IGBT 1 and diode 2) are joined to the ceramic substrate 11. The ceramic substrate 11 has a large warp when a conductor layer is formed only on one side, and therefore a conductor layer is formed on both sides. A circuit conductor layer 13 is formed on the first main surface on the lower side of the ceramic substrate 11 leaving a blank portion (first blank portion) 11b on the outer periphery. The IGBT 1 is joined to the circuit conductor layer 12a by solder die bonding. The diode 2 is joined to the circuit conductor layer 12b by solder die bonding.

図５はセラミック基板１１に主端子６と主端子８と接合した状態を表している。主端子６はＩＧＢＴ１の主電極（ソース電極またはドレイン電極）およびダイオード２の主電極（アノード電極またはカソード電極）に直接はんだ付けする。主端子８はセラミック基板１１の回路導体層１２ｂに直接はんだ付けする。主端子６の先端にはネジ止め端子６ａが形成されている。主端子８の先端にはネジ止め端子８ａが形成されている。   FIG. 5 shows a state in which the main terminal 6 and the main terminal 8 are joined to the ceramic substrate 11. The main terminal 6 is directly soldered to the main electrode (source electrode or drain electrode) of the IGBT 1 and the main electrode (anode electrode or cathode electrode) of the diode 2. The main terminal 8 is directly soldered to the circuit conductor layer 12b of the ceramic substrate 11. A screw terminal 6 a is formed at the tip of the main terminal 6. A screw terminal 8 a is formed at the tip of the main terminal 8.

図６はセラミック基板１１をケース５で囲んだ状態を表している。ケース５の幅と奥行きは48mm×28mmとし、高さは12mmとした。ケース５とセラミック基板１１との隙間はシリコーン製の接着剤１０で埋める。ケース５にはネジ止め端子６ａおよびネジ止め端子８ａを含む部分をインサートモールドする。主端子６の上には信号端子７がインサートモールドされている橋渡し部材３を溶着する。主端子６はケース５の中でセラミック基板１１から２mm程度浮いている。主端子６はＩＧＢＴ１とダイオード２にはんだ１４で接合した。アルミ製のワイヤ４は直径0.15mmのものを使用した。ワイヤ４は信号端子７の上に配置されているため、ワイヤボンド時に超音波を容易に印加できる。   FIG. 6 shows a state in which the ceramic substrate 11 is surrounded by the case 5. Case 5 had a width and depth of 48 mm x 28 mm and a height of 12 mm. A gap between the case 5 and the ceramic substrate 11 is filled with an adhesive 10 made of silicone. The part including the screw terminal 6a and the screw terminal 8a is insert-molded in the case 5. The bridging member 3 in which the signal terminal 7 is insert-molded is welded onto the main terminal 6. The main terminal 6 floats about 2 mm from the ceramic substrate 11 in the case 5. The main terminal 6 was joined to the IGBT 1 and the diode 2 with solder 14. The aluminum wire 4 having a diameter of 0.15 mm was used. Since the wire 4 is disposed on the signal terminal 7, an ultrasonic wave can be easily applied at the time of wire bonding.

最後に、ケース５にダイレクトポッティング封止樹脂部材１５を６０℃に加熱した状態で流し込む。ダイレクトポッティング封止樹脂部材１５には例えば菱電化成製のR-416を使用する。その後、加熱した状態で真空脱泡する（１００℃，1.5時間）。さらに、昇温（１４０℃，1.5時間）して封止樹脂を硬化させると、ダイレクトポッティングが完了し、パワーモジュールが完成する。ケースの中央部には信号端子７が配置されている。信号端子７は、ダイレクトポッティング封止樹脂部材１５の硬化収縮や温度サイクルによる剥離の影響を受けにくいので、断線にいたる寿命を長くすることが出来る。   Finally, the direct potting sealing resin member 15 is poured into the case 5 while being heated to 60 ° C. For the direct potting sealing resin member 15, for example, R-416 made by Ryoden Kasei is used. Thereafter, vacuum degassing is performed in a heated state (100 ° C., 1.5 hours). Furthermore, when the sealing resin is cured by raising the temperature (140 ° C., 1.5 hours), the direct potting is completed and the power module is completed. A signal terminal 7 is disposed at the center of the case. Since the signal terminal 7 is not easily affected by curing shrinkage of the direct potting sealing resin member 15 or peeling due to a temperature cycle, it is possible to prolong the life leading to disconnection.

ここではセラミック基板１１の材料としてＡｌＮを用いたが、アルミナやＳｉＮなどのセラミック材料でも同様の効果が得られる。放熱性の必要性があまり高くない場合であれば、基板にガラスエポキシ基板などを用いることも可能である。ケース５の材料としてＰＰＳ樹脂を用いているが、ＬＣＰ（液晶ポリマー）を用いても同様の効果が得られる。ここでは１対のダイオード２とＩＧＢＴ１を内蔵している（１ in １）でのモジュール構成を示しているが、ダイオードとＩＧＢＴを２対内蔵している（２ in １）、６対内蔵している（６ in １）であっても、主端子となる金属板上に信号端子を配置することで同様の効果が得られる。   Here, AlN is used as the material of the ceramic substrate 11, but the same effect can be obtained with a ceramic material such as alumina or SiN. If the necessity for heat dissipation is not so high, a glass epoxy substrate or the like can be used as the substrate. Although a PPS resin is used as the material of the case 5, the same effect can be obtained by using LCP (liquid crystal polymer). Here, the module configuration is shown in which one pair of diodes 2 and IGBTs 1 are built in (1 in 1), but two pairs of diodes and IGBTs are built in (2 in 1), and six pairs are built in. (6 in 1), the same effect can be obtained by arranging the signal terminal on the metal plate serving as the main terminal.

セラミック基板の代わりに、ベース板とセラミック基板の機能を併せ持つ金属基板を用いれば部品点数の削減が可能となり、軽量化や小型化が可能となる。ここでいう金属基板はアルミ板上に有機絶縁層と銅箔導体層を積層した物である。ここではアルミ製のワイヤボンドを用いているが、銅製ワイヤ、アルミ被覆銅ワイヤ、または金ワイヤを用いても同様の効果が得られる。また、主端子６にリボンボンドを用いたり、バスバーなどを用いても同様の効果が得られる。バスバーは金属板（ＩＧＢＴ１のソース電極およびダイオード２のアノード電極）に超音波接合する。バスバーの断面は細長い長方形をしているので放熱効果を持つ他、表面積がより大きいので表面電流が大きい高速システムでより有利となる。   If a metal substrate having both the functions of a base plate and a ceramic substrate is used instead of the ceramic substrate, the number of components can be reduced, and the weight and size can be reduced. Here, the metal substrate is a laminate in which an organic insulating layer and a copper foil conductor layer are laminated on an aluminum plate. Although aluminum wire bonds are used here, the same effect can be obtained by using copper wires, aluminum-coated copper wires, or gold wires. The same effect can be obtained by using a ribbon bond or a bus bar for the main terminal 6. The bus bar is ultrasonically bonded to a metal plate (the source electrode of the IGBT 1 and the anode electrode of the diode 2). Since the cross section of the bus bar is a long and narrow rectangle, it has a heat dissipation effect, and since the surface area is larger, it is more advantageous in a high speed system with a large surface current.

ダイレクトポッティング封止樹脂部材については、流し込んで常温硬化させる種類のものでも同様の効果が得られる。さらにゲル封止を行っても同様のパワーモジュールの形成が可能となる。また、電力半導体素子とセラミック基板の接続や、主端子と電力半導体素子の接続にはんだを用いたが、Ａｇフィラーをエポキシ樹脂に分散させた導電性接着剤や、ナノ粒子を低温焼成させるＡｇナノパウダやＣｕナノパウダなどを用いても同様の効果が得られる。   About the direct potting sealing resin member, the same effect can be obtained even if it is of a type that is poured and cured at room temperature. Further, even if gel sealing is performed, the same power module can be formed. In addition, a solder is used to connect the power semiconductor element and the ceramic substrate, or between the main terminal and the power semiconductor element, but a conductive adhesive in which an Ag filler is dispersed in an epoxy resin, or an Ag nanopowder for firing nanoparticles at a low temperature. Similar effects can be obtained by using Cu nano powder or the like.

実施の形態２．
図７は実施の形態２によるパワーモジュール１００の概念断面図である。ＩＧＢＴ１とダイオード２はＡｌＮ製のセラミック基板１１の上に搭載されている。セラミック基板１１の上面には銅製の回路導体層１２ａおよび回路導体層１２ｂが形成されている。ＩＧＢＴ１は回路導体層１２ａにはんだダイボンドによって固定されている。ダイオード２は回路導体層１２ｂにはんだダイボンドによって固定されている。セラミック基板１１は片面にしか導体層が形成されていないとそりが大きいので、両面に導体層が形成されている。パワーモジュール１００は、通常、セラミック基板１１の下面に形成されている回路導体層１３を使って冷却器にはんだ付けされるが、熱伝導性の良いグリスを用いて冷却器に装着することもできる。 Embodiment 2. FIG.
FIG. 7 is a conceptual cross-sectional view of the power module 100 according to the second embodiment. The IGBT 1 and the diode 2 are mounted on an AlN ceramic substrate 11. A copper circuit conductor layer 12 a and a circuit conductor layer 12 b are formed on the upper surface of the ceramic substrate 11. The IGBT 1 is fixed to the circuit conductor layer 12a by solder die bonding. The diode 2 is fixed to the circuit conductor layer 12b by solder die bonding. The ceramic substrate 11 has a large warp when the conductor layer is formed only on one side, and therefore the conductor layer is formed on both sides. The power module 100 is usually soldered to the cooler using the circuit conductor layer 13 formed on the lower surface of the ceramic substrate 11, but can also be attached to the cooler using grease with good thermal conductivity. .

ＰＰＳ樹脂製のケース５の上部外周には厚さ0.2mmの薄肉部５ａが形成されている。ケース５の内部には橋渡し部材（第１橋渡し部材）３と橋渡し部材（第２橋渡し部材）９が固定されている。橋渡し部材３はＩＧＢＴ１とダイオード２との間の空間上部に配置されている。橋渡し部材９はセラミック基板１１の上面に配置されている。主端子６は橋渡し部材９に、インサートモールドなどの方法で、固定されている。橋渡し部材３は主端子６よりも下側まで回り込んでいる。橋渡し部材３の樹脂が主端子６の下側まで回りこんでいるほうが信号端子７を固定しやすく強度が確保できる。溶接端子６ｂは主端子６の先端に形成されていて、ダイレクトポッティング封止樹脂部材１５から突出している。ケース５は、ダイオード２とＩＧＢＴ１と主端子６と主端子８と信号端子７と橋渡し部材３と橋渡し部材９を収容している。   A thin portion 5a having a thickness of 0.2 mm is formed on the upper outer periphery of the case 5 made of PPS resin. A bridging member (first bridging member) 3 and a bridging member (second bridging member) 9 are fixed inside the case 5. The bridging member 3 is disposed in the upper part of the space between the IGBT 1 and the diode 2. The bridging member 9 is disposed on the upper surface of the ceramic substrate 11. The main terminal 6 is fixed to the bridging member 9 by a method such as insert molding. The bridging member 3 wraps around below the main terminal 6. It is easier to fix the signal terminal 7 and the strength can be ensured when the resin of the bridging member 3 extends to the lower side of the main terminal 6. The welding terminal 6 b is formed at the tip of the main terminal 6 and protrudes from the direct potting sealing resin member 15. The case 5 accommodates the diode 2, IGBT 1, main terminal 6, main terminal 8, signal terminal 7, bridging member 3, and bridging member 9.

図８は実施の形態２によるパワーモジュール１００を表す概念上面図である。主端子６はＩＧＢＴ１のソース電極１ａおよびダイオード２のアノード電極２ａに直接はんだ付けされている。主端子８はセラミック基板１１の回路導体層１２ｂに直接はんだ付けされている。ＩＧＢＴ１のドレイン電極は回路導体層１２ａと接続されている。ダイオード２のカソード電極は回路導体層１２ｂと接続されている。ＩＧＢＴ１の制御電極１ｂは信号端子７とアルミ製のワイヤ４で個々に接続されている。信号端子７は、橋渡し部材３にインサートモールドなどの方法で固定されている。溶接端子８ｂは主端子８の先端に形成されていて、主端子８と一体化している。   FIG. 8 is a conceptual top view showing the power module 100 according to the second embodiment. The main terminal 6 is directly soldered to the source electrode 1a of the IGBT 1 and the anode electrode 2a of the diode 2. The main terminal 8 is directly soldered to the circuit conductor layer 12 b of the ceramic substrate 11. The drain electrode of the IGBT 1 is connected to the circuit conductor layer 12a. The cathode electrode of the diode 2 is connected to the circuit conductor layer 12b. The control electrode 1 b of the IGBT 1 is individually connected to the signal terminal 7 by an aluminum wire 4. The signal terminal 7 is fixed to the bridging member 3 by a method such as insert molding. The welding terminal 8 b is formed at the tip of the main terminal 8 and is integrated with the main terminal 8.

ケース５の内側はダイレクトポッティング封止樹脂部材１５で充填されている。ケース５の内部には橋渡し部材３の他に橋渡し部材９が形成されている。主端子８の溶接端子８ｂはダイレクトポッティング封止樹脂部材１５から突出している。溶接端子６ｂは主端子６と一体化している。溶接端子６ｂおよび溶接端子８ｂは橋渡し部材９にインサートモールドなどの方法で固定されている。溶接端子６ｂと溶接端子８ｂを使って、パワーモジュール１００を外部機器に接続する。信号端子７の幅は1.5mmとした。溶接端子６ｂおよび溶接端子８ｂの幅は10mmとした。   The inside of the case 5 is filled with a direct potting sealing resin member 15. In addition to the bridging member 3, a bridging member 9 is formed inside the case 5. The welding terminal 8 b of the main terminal 8 protrudes from the direct potting sealing resin member 15. The welding terminal 6 b is integrated with the main terminal 6. The welding terminal 6b and the welding terminal 8b are fixed to the bridging member 9 by a method such as insert molding. The power module 100 is connected to an external device using the welding terminal 6b and the welding terminal 8b. The width of the signal terminal 7 was 1.5 mm. The width of the welding terminal 6b and the welding terminal 8b was 10 mm.

次に、パワーモジュール１００の製造方法を説明する。図９は電力半導体素子（ＩＧＢＴ１およびダイオード２）が接合されたセラミック基板１１に主端子６と主端子８が接合されている状態を表す平面図である。セラミック基板１１の上面に形成されている回路導体層１２ａおよび回路導体層１２ｂは、連通していて、そのパターンの厚さは0.4mmとし
た。セラミック基板１１の大きさは40mm×25mmとし、厚さ0.635mmのものを用いた。ＩＧＢＴ１に形成されている４個の制御電極１ｂはゲート電極、温度センサー電極を含む。ダイオード２の大きさは15mm×15mmとし、厚さ0.3mmのものを用いた。ＩＧＢＴ１は回路導体層１２ａにはんだダイボンドによって接合した。ダイオード２は回路導体層１２ｂにはんだダイボンドによって接合した。 Next, a method for manufacturing the power module 100 will be described. FIG. 9 is a plan view showing a state in which the main terminal 6 and the main terminal 8 are joined to the ceramic substrate 11 to which the power semiconductor elements (IGBT 1 and diode 2) are joined. The circuit conductor layer 12a and the circuit conductor layer 12b formed on the upper surface of the ceramic substrate 11 are in communication, and the thickness of the pattern is 0.4 mm. The ceramic substrate 11 had a size of 40 mm × 25 mm and a thickness of 0.635 mm. The four control electrodes 1b formed on the IGBT 1 include a gate electrode and a temperature sensor electrode. The size of the diode 2 was 15 mm × 15 mm and the thickness was 0.3 mm. IGBT1 was joined to the circuit conductor layer 12a by solder die bonding. The diode 2 was joined to the circuit conductor layer 12b by solder die bonding.

次いでセラミック基板１１をケース５で囲む。ケース５の幅と奥行きは48mm×28mmとし、高さは12mmとした。ケース５とセラミック基板１１との隙間はシリコーン製の接着剤１０で埋める。信号端子７は主端子６の上に橋渡し部材３を介して固定する。主端子６はケース５の中でセラミック基板１１から２mm程度浮いている。主端子６はＩＧＢＴ１とダイオード２にはんだで接合する。アルミ製のワイヤ４は直径0.15mmのものを使用した。ワイヤ４は信号端子７の上に配置されているため、ワイヤボンド時に超音波を容易に印加できる。   Next, the ceramic substrate 11 is surrounded by the case 5. Case 5 had a width and depth of 48 mm x 28 mm and a height of 12 mm. A gap between the case 5 and the ceramic substrate 11 is filled with an adhesive 10 made of silicone. The signal terminal 7 is fixed on the main terminal 6 via the bridging member 3. The main terminal 6 floats about 2 mm from the ceramic substrate 11 in the case 5. The main terminal 6 is joined to the IGBT 1 and the diode 2 with solder. The aluminum wire 4 having a diameter of 0.15 mm was used. Since the wire 4 is disposed on the signal terminal 7, an ultrasonic wave can be easily applied at the time of wire bonding.

最後に、ケース５にダイレクトポッティング封止樹脂を６０℃に加熱した状態で流し込む。ダイレクトポッティング封止樹脂には例えば菱電化成製のR-416を使用する。その後、加熱した状態で真空脱泡する（１００℃，1.5時間）。さらに、昇温（１４０℃，1.5時間）して封止樹脂を硬化させると、封止が完了し、パワーモジュールが完成する。ケース５の中央部には信号端子７が配置されている。信号端子７は、ダイレクトポッティング封止樹脂部材１５の硬化収縮や温度サイクルによる剥離の影響を受けにくいので、断線にいたる寿命を長くすることが出来る。   Finally, the direct potting sealing resin is poured into the case 5 while being heated to 60 ° C. For example, R-416 manufactured by Ryoden Kasei is used as the direct potting sealing resin. Thereafter, vacuum degassing is performed in a heated state (100 ° C., 1.5 hours). Further, when the sealing resin is cured by raising the temperature (140 ° C., 1.5 hours), the sealing is completed and the power module is completed. A signal terminal 7 is disposed at the center of the case 5. Since the signal terminal 7 is not easily affected by curing shrinkage of the direct potting sealing resin member 15 or peeling due to a temperature cycle, it is possible to prolong the life leading to disconnection.

ここではセラミック基板１１の材料としてＡｌＮを用いたが、アルミナやＳｉＮなどのセラミック材料でも同様の効果が得られる。放熱性の必要性があまり高くない場合であれば、基板にガラスエポキシ基板などを用いることも可能である。ケース５の材料としてＰＰＳ樹脂を用いているが、ＬＣＰ（液晶ポリマー）を用いても同様の効果が得られる。ここでは１対のダイオード２とＩＧＢＴ１を内蔵している（１ in １）でのモジュール構成を示しているが、ダイオードとＩＧＢＴを２対内蔵している（２ in １）、６対内蔵している（６ in １）であっても、主端子となる金属板上に信号端子を配置することで同様の効果が得られる。   Here, AlN is used as the material of the ceramic substrate 11, but the same effect can be obtained with a ceramic material such as alumina or SiN. If the necessity for heat dissipation is not so high, a glass epoxy substrate or the like can be used as the substrate. Although a PPS resin is used as the material of the case 5, the same effect can be obtained by using LCP (liquid crystal polymer). Here, the module configuration is shown in which one pair of diodes 2 and IGBTs 1 are built in (1 in 1), but two pairs of diodes and IGBTs are built in (2 in 1), and six pairs are built in. (6 in 1), the same effect can be obtained by arranging the signal terminal on the metal plate serving as the main terminal.

セラミック基板の代わりに、ベース板とセラミック基板の機能を併せ持つ金属基板を用いることで部品点数の削減が可能となり、軽量化や小型化が可能となる。ここでいう金属基板はアルミ板上に有機絶縁層と銅箔導体層を積層した物である。ここではアルミ製のワイヤボンドを用いたが、銅製ワイヤ、アルミ被覆銅ワイヤ、または金ワイヤを用いても同様の効果が得られる。また、主端子６にリボンボンドを用いたり、バスバーなどを用いても同様の効果が得られる。バスバーは金属板（ＩＧＢＴ１のソース電極１ａおよびダイオード２のアノード電極２ａ）に超音波接合する。バスバーの断面は細長い長方形をしているので放熱効果を持つ他、表面積がより大きいので表面電流が大きい高速システムでより有利となる。   By using a metal substrate having both the functions of a base plate and a ceramic substrate instead of the ceramic substrate, the number of components can be reduced, and the weight and size can be reduced. Here, the metal substrate is a laminate in which an organic insulating layer and a copper foil conductor layer are laminated on an aluminum plate. Although aluminum wire bonds are used here, similar effects can be obtained by using copper wires, aluminum-coated copper wires, or gold wires. The same effect can be obtained by using a ribbon bond or a bus bar for the main terminal 6. The bus bar is ultrasonically bonded to a metal plate (the source electrode 1a of the IGBT 1 and the anode electrode 2a of the diode 2). Since the cross section of the bus bar is a long and narrow rectangle, it has a heat dissipation effect, and since the surface area is larger, it is more advantageous in a high speed system with a large surface current.

ダイレクトポッティング封止樹脂部材については、流し込んで常温硬化させる種類のものでも同様の効果が得られる。さらにゲル封止を行っても同様のパワーモジュールの形成が可能となる。また、電力半導体素子とセラミック基板の接続や、主端子と電力半導体素子の接続にはんだを用いたが、Ａｇフィラーをエポキシ樹脂に分散させた導電性接着剤や、ナノ粒子を低温焼成させるＡｇナノパウダやＣｕナノパウダなどを用いても同様の効果が得られる。   About the direct potting sealing resin member, the same effect can be obtained even if it is of a type that is poured and cured at room temperature. Further, even if gel sealing is performed, the same power module can be formed. In addition, a solder is used to connect the power semiconductor element and the ceramic substrate, or between the main terminal and the power semiconductor element, but a conductive adhesive in which an Ag filler is dispersed in an epoxy resin, or an Ag nanopowder for firing nanoparticles at a low temperature. Similar effects can be obtained by using Cu nano powder or the like.

図１０に示すように、ケース５の外周部と、主端子を支持する橋渡し部材９および信号端子を支持する橋渡し部材３を異なる部材で形成してもよい。例えば、ケース５の外周部は柔軟性に富んだＰＳ樹脂とし、橋渡し部材３、９はＰＰＳ樹脂とすることでダイレクトポッティング封止樹脂部材の硬化収縮に対する追従性を増し、剥離をさらに抑制することが可能となる。   As shown in FIG. 10, the outer peripheral portion of the case 5, the bridging member 9 that supports the main terminal, and the bridging member 3 that supports the signal terminal may be formed of different members. For example, the outer peripheral portion of the case 5 is made of PS resin having a high flexibility, and the bridging members 3 and 9 are made of PPS resin, so that the followability to cure shrinkage of the direct potting sealing resin member is increased, and the peeling is further suppressed. Is possible.

電力半導体素子にＳｉＣを用いた場合、電力半導体素子はその特徴を生かすべくＳｉの時と比較してより高温で動作させることになる。ＳｉＣデバイスを搭載するパワーモジュ
ールにおいては、電力半導体素子としてより高い信頼性が求められるため、高信頼のパワーモジュールを実現するという本発明のメリットはより効果的なものとなる。 When SiC is used for the power semiconductor element, the power semiconductor element is operated at a higher temperature than that of Si in order to take advantage of its characteristics. In a power module equipped with a SiC device, higher reliability is required as a power semiconductor element. Therefore, the merit of the present invention for realizing a highly reliable power module becomes more effective.

なお、本発明は、その発明の範囲内において、実施の形態を自由に組み合わせたり、各実施の形態を適宜、変形、省略することが可能である。   It should be noted that the present invention can be freely combined with each other within the scope of the invention, and each embodiment can be appropriately modified or omitted.

１ ＩＧＢＴ、１ａ ソース電極、１ｂ 制御電極、２ ダイオード、２ａ アノード電極、３ 橋渡し部材、４ ワイヤ、５ ケース、５ａ 薄肉部、６ 主端子、６ａ ネジ止め端子、６ｂ 溶接端子、７ 信号端子、８ 主端子、８ａ ネジ止め端子、８ｂ 溶接端子、９ 橋渡し部材、１０ 接着剤、１１ セラミック基板、１１ａ 余白部、１１ｂ 余白部、１２ａ 回路導体層、１２ｂ 回路導体層、１３ 回路導体層、１４ はんだ、１５ ダイレクトポッティング封止樹脂部材、１００ パワーモジュール 1 IGBT, 1a source electrode, 1b control electrode, 2 diode, 2a anode electrode, 3 bridging member, 4 wire, 5 case, 5a thin part, 6 main terminal, 6a screw terminal, 6b welding terminal, 7 signal terminal, 8 Main terminal, 8a Screw terminal, 8b Weld terminal, 9 Bridging member, 10 Adhesive, 11 Ceramic substrate, 11a Blank part, 11b Blank part, 12a Circuit conductor layer, 12b Circuit conductor layer, 13 Circuit conductor layer, 14 Solder, 15 Direct potting sealing resin member, 100 Power module

Claims (2)

第１主面には外周に第１余白部を残して第１導体層が形成されており、第２主面には外周に第２余白部を残して第２導体層が形成されているセラミック基板と、
前記セラミック基板の第２導体層に固定されているダイオードと、
制御電極を有し前記セラミック基板の第２導体層に固定されているトランジスタと、
前記セラミック基板の第２導体層に接続されている第１端子と、
前記ダイオードおよび前記トランジスタを接続する第２端子と、
前記トランジスタの制御電極とワイヤで接続されている第３端子と、
前記第２端子に固定され前記第３端子を保持する絶縁性の第１橋渡し部材と、
前記セラミック基板に固定され前記第１端子と前記第２端子を保持する絶縁性の第２橋渡し部材と、
前記セラミック基板に接着され、前記ダイオードと前記トランジスタと前記第１端子と前記第２端子と前記第３端子と前記第１橋渡し部材と前記第２橋渡し部材を収容するケースと、
前記ケースの内側に充填された封止樹脂部材と、を備え、
前記第１端子および前記第２端子は一部が前記第２橋渡し部材に固定され、前記第３端子は先端が前記封止樹脂部材から突出しているパワーモジュール。 A first conductor layer is formed on the first main surface leaving a first margin on the outer periphery, and a second conductor layer is formed on the second main surface leaving a second margin on the outer periphery. A substrate,
A diode fixed to the second conductor layer of the ceramic substrate;
A transistor having a control electrode and fixed to the second conductor layer of the ceramic substrate;
A first terminal connected to the second conductor layer of the ceramic substrate;
A second terminal connecting the diode and the transistor;
A third terminal connected to the control electrode of the transistor by a wire;
An insulating first bridging member fixed to the second terminal and holding the third terminal;
An insulating second bridging member fixed to the ceramic substrate and holding the first terminal and the second terminal;
A case that is bonded to the ceramic substrate and accommodates the diode, the transistor, the first terminal, the second terminal, the third terminal, the first bridging member, and the second bridging member;
A sealing resin member filled inside the case,
A part of the first terminal and the second terminal is fixed to the second bridging member, and a tip of the third terminal protrudes from the sealing resin member. 前記第１橋渡し部材および前記第２橋渡し部材は、前記ケースとは異なる樹脂からなることを特徴とする請求項１に記載のパワーモジュール。 The power module according to claim 1, wherein the first bridging member and the second bridging member are made of a resin different from the case.
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