CN103295920B - Nonisulated type power model and packaging technology thereof - Google Patents
Nonisulated type power model and packaging technology thereof Download PDFInfo
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- CN103295920B CN103295920B CN201210052588.6A CN201210052588A CN103295920B CN 103295920 B CN103295920 B CN 103295920B CN 201210052588 A CN201210052588 A CN 201210052588A CN 103295920 B CN103295920 B CN 103295920B
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- power model
- type power
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- copper base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The invention provides a kind of nonisulated type power model, it comprises: copper base; Be positioned at the power model chip of copper base specified location; From the gate electrode that power model chip is drawn; And shell, state copper base, gate electrode and described power model chip for cover cap residence, and described gate electrode is drawn from described shell; Wherein, power model direct chip attachment is on copper base, and electrode welding is on described power model chip.Nonisulated type power structure of the present invention is simple, packaging technology simple, is easy to realize, and effectively can reduce mechanical stress and the thermal stress of module, thus improve the reliability of nonisulated type power model.
Description
Technical field
The present invention relates to semiconductor, particularly relate to nonisulated type power model and encapsulation technology thereof.
Background technology
Power model, according to being the structure of electric insulation or uninsulated structure between its chip and substrate, is divided into insulated type power model, and nonisulated type power model.
Power model usually its substrate is used as public electrode, and it has the features such as forward voltage drop is low, surge current is large, is mainly used in all kinds of bonding machine and Switching Power Supply.
But under being usually operated at high voltage, big current condition just because of power model, therefore, the heat radiation of power model is exactly the problem usually must considered.
Summary of the invention
An object of the present invention be to provide a kind of nonisulated type power model and packaging technology, the nonisulated type power model made by this packaging technology can reduce the thermal resistance of module, thus improves the reliability of power model.
Another object of the present invention is the structure simplifying nonisulated type power model, thus reduces manufacturing cost.
According to one aspect of the present invention, provide a kind of packaging technology of nonisulated type power.The packaging technology of nonisulated type power of the present invention is described for thyristor chip below.It comprises: step (1), i.e. components and parts positioning step: specified location power model chip 220 being installed to copper base 210; Step (2), i.e. the first welding step: power model chip 220 and copper base 210 are welded together; Step (3), namely seals step: be installed together with shell 280 by the copper base 210 being welded with power model chip 220, and adopt fluid sealant 270 to carry out sealing to form hermetically-sealed construction; And step (4), i.e. curing schedule: adopt epoxy resin 290, encapsulates the hermetically-sealed construction that formed by described sealing step and solidifies it, thus forming nonisulated type power model 200 of the present invention.
According to the packaging technology of nonisulated type power model 200 provided by the invention, wherein, step (2) is carried out under vacuum conditions.
In the packaging technology of nonisulated type power model 200 before, the second welding step can also be comprised before beginning step (3): on power model chip 220 after completing steps (2), gate electrode 230 is welded on power model chip 230, and makes gate electrode 230 out exposed from epoxy resin 290.
In the packaging technology of nonisulated type power model 200 of the present invention, after completing steps (4), outward appearance treatment step can also be comprised: bend shaping by the gate electrode 230 that shell 280 exposes from epoxy resin 290.
In the packaging technology of nonisulated type power model 200 of the present invention, power model can be thyristor module, diode (led) module, IGBT module or MOSFET module.
According to second aspect of the present invention, provide a kind of nonisulated type power model 200, it comprises: copper base 210; Be positioned at the power model chip 220 of copper base 210 specified location; From the gate electrode 230 that power model chip 220 is drawn; And shell 280, for cover cap copper base 210, gate electrode 230 and power model chip 220; Wherein, power model chip 220 is directly welded on copper base 210, and electrode 230 is welded on power model chip 220.
According to nonisulated type power model 200 provided by the invention, wherein, power model chip 220, gate electrode 230, copper base 210 and shell 280 adopt Silica hydrogel 270 to seal, and Silica hydrogel 270 adopt epoxy resin 290 cure package, to form hermetically-sealed construction.
Gate electrode 230 is preferably drawn from epoxy resin 290.
According in nonisulated type power model 200 of the present invention, gate electrode 230 is preferably bended shaping.
According in nonisulated type power model 200 of the present invention, between the chip 220 in nonisulated type power model 200, aluminium wire is preferably adopted to be bonded in.
According in nonisulated type power model 200 of the present invention, the thickness of copper base is preferably 3 millimeters.
Accompanying drawing explanation
The processing step that insulated type power model of the prior art shown in Fig. 1 adopts when encapsulating;
Shown in Fig. 2 is the internal structure schematic diagram of insulated type power model in prior art;
Shown in Fig. 3 is the processing step that nonisulated type power model of the present invention adopts when encapsulating; And
Shown in Fig. 4 is the internal structure schematic diagram of nonisulated type power model adopting packaging technology of the present invention to be formed.
Embodiment
With reference to the accompanying drawings, nonisulated type power model and the packaging technology thereof of the embodiment of the present invention are described.
Those skilled in the art can understand, and the term " power model " adopted in the present invention is a kind of general reference, and it can be thyristor, diode (led) module, IGBT module or MOSFET module etc.But for convenience, in the description of specification, only represent thyristor, diode (led) module, IGBT module or MOSFET module etc. with " power model ".
Power model is due under being usually operated at big current, and the thermal resistance of itself can by the impact of several factors.Such as, power, the thickness of weld layer and the thermal coefficient of expansion etc. of weld layer during radiating condition, the devices function of module all can affect the thermal resistance of device.
The thermal resistance of power model is provided by following formula:
R=Δ T/P formula (1)
Wherein, R is thermal resistance;
Δ T is the temperature difference that device two ends are formed;
P is the power of device caused by added electric current and voltage.
As can be seen from formula (1), the temperature difference that device two ends are formed is less, then thermal resistance is less.Therefore, manage the thickness reducing weld layer, the temperature difference at device two ends can be reduced, thus greatly reduce the thermal resistance of power device.
Shown in Fig. 1 is the insulated type power module package technique of prior art, and shown in Fig. 2 is the internal structure schematic diagram of the insulated type power model of the prior art adopted shown in Fig. 1 made by technique.
As shown in Figure 2, the insulated type power model 100 of prior art comprises copper base 110, and it is arranged at the bottom of power model 100.Copper base 110 is provided with Direct Bonding copper DirectBondingCopper, DBC substrate 120.One or more chip 140 is mounted on the precalculated position of DBC substrate 120, after encapsulation, form insulated type power model 100.
Chip 140 carries out lead-in wire by aluminium wire connecting bridge 150 in inside modules and connects.Bending electrode 130 is formed by bending copper sheet.One end of copper sheet is contacted with on the chip on the surface of DBC substrate 120 bendingly, and its other end is bent to form bending electrode 130 at the upper surface of power model.
In addition, power model 100 also comprises the shell 180 of coated copper substrate 110 grade.The inside of shell 180 is filled with Silica hydrogel 170, and power model 100 also comprises cover plate of outer casing 190.
Fig. 1 illustrates that the power model of prior art shown in Fig. 2 at least needs to be formed by following processing step:
(1) chip 140 is installed to the specified location of DBC substrate 120;
(2) DBC substrate 120 is soldered on the precalculated position of copper base 110;
(3) by aluminium wire bonding, a chip and another chip are coupled together;
(4) shell 180 is added to copper base 110 etc.;
(5) to the power model encapsulating, the sealing that have added shell 180;
(6) cover plate of outer casing 190 is added, and hermetically sealed further;
(7) on cover plate of outer casing, bending electrode 130 is bended shaping.
As can be seen from Fig. 1 and Fig. 2, DBC substrate 120 operationally, owing to being first welded on DBC substrate 120 by chip 140, and then is welded on copper base 110 by the insulated type power model of prior art, and thus its thermal resistance is comparatively large, and heat dissipation problem is difficult to solve.
In addition, due in above-mentioned processing step, when sealant pouring and sealing, need to add cover plate of outer casing 190, thus complex structure, cost are higher.
In order to address this problem, adopt in the present invention and chip is directly welded with copper base, replace original processing step chips welding be then welded on by DBC again on DBC on copper base, and adopt epoxy resin to carry out plastic packaging to power model, replace original process for filling colloid into.
Packaging technology of the present invention as shown in Figure 3.
As shown in Figure 3, nonisulated type power module package technique of the present invention comprises the steps:
Step (1), i.e. components and parts positioning step: specified location power model chip 220 being installed to copper base 210;
Step (2), i.e. the first welding step: power model chip 220 and copper base 210 are welded together;
Step (3), namely seals step: the copper base 210 and a shell 280 that are welded with power model chip 220 are installed together, and adopt fluid sealant 270 to seal;
Step (4), i.e. curing schedule: adopt epoxy resin 290, encapsulation copper base 210 also makes epoxy resin cure.
In above-mentioned technique of the present invention, power model chip 220 and copper base 210 are welded together and carries out under vacuum conditions.
After completing power model chip 220 and copper base 210 welded together, second welding step can also be comprised: on described power model chip 220, gate electrode 230 is welded on power model chip 220, and makes gate electrode 230 out exposed from epoxy resin 290.
In addition, above-mentioned complete curing schedule after, an outward appearance treatment step can also be comprised, that is, the bare electrode on shell 280 is bended shaping.
By processing step as shown in Figure 3, nonisulated type power model of the present invention just can be formed.
The internal structure schematic diagram of the of the present invention nonisulated type power model adopting nonisulated type power module package technique of the present invention to be formed shown in Fig. 4.
By Fig. 4 and Fig. 2 relatively after can find out, shown in the internal structure of nonisulated type power model of the present invention and Fig. 2, the difference of the internal structure of the insulated type power model of prior art is, with DBC substrate in insulated type power model of the prior art, and in the of the present invention nonisulated type power model shown in Fig. 4, be without DBC substrate, namely chip is directly welded on copper base.
As shown in Figure 4, nonisulated type power model of the present invention comprises:
Copper base 210;
Be positioned at the power model chip 220 of copper base 210 specified location; And
From the gate electrode 230 that power model chip is drawn,
Shell 280, live copper base, gate electrode and power model chip, and gate electrode 230 is drawn for cover cap from shell;
Wherein, power model chip 220 and gate electrode 230 are directly welded on copper base 210, and
Wherein, first seal power model chip 220, copper base 210 and gate electrode 230 one end of being coupled mutually with power model chip 220 to form a hermetically-sealed construction with Silica hydrogel 270, then on Silica hydrogel 270, use the whole hermetically-sealed construction of epoxy resin 290 cure package, thus form nonisulated type power model 200.Therefore epoxy resin 290 is placed on Silica hydrogel 270, forms solidification seal modules, and itself and shell 280 protect the internal structure of nonisulated type power model 200 jointly.
In addition, in the internal structure of the insulated type power model 100 of the prior art shown in Fig. 2, be to adopt aluminium wire 150 to be bonded together between power model chip 140 and another power model chip 140.Compared with Fig. 2, in the internal structure of the of the present invention nonisulated type power model 200 shown in Fig. 4, the modular structure of this employing aluminium wire bonding is not shown.
But those skilled in the art are appreciated that in concrete circuit structure, in nonisulated type power model 200 of the present invention, aluminium wire also can be adopted a certain chip and another chip to be got up by circuit requirement bonding.
As can be seen from the processing step of the invention described above, because the special construction (i.e. nonisulated type) of nonisulated type power model makes its pressure drop very low, and weld layer thickness is main much thinner than insulated type module because not using DBC, so more be conducive to the heat radiation of module, thus its thermal resistance is reduced greatly.In a preferred embodiment, can also the thickness of thinning copper base 210 to reduce thermal resistance further, such as, the thickness of copper base 210 is arranged on 3 millimeter.
In addition, adopt epoxy resin 290 to replace the cover plate of outer casing 190 shown in Fig. 2, structure is simple, and technique is simple, be easy to realize, and use epoxide-resin glue sealing effectively can reduce mechanical stress and the thermal stress of module, thus reliability when can improve the work of nonisulated type power model.
Above, specific embodiments of the invention are described with reference to the accompanying drawings.But those skilled in the art can understand, when not departing from principle of the present invention and spirit, some modifications and changes can also be made to the above embodiment of the present invention.The description of embodiment is only used to those skilled in the art be understood, implements the present invention, the present invention should be interpreted as and only be only limitted to described embodiment.Protection scope of the present invention limited by claims.
Claims (4)
1.
a kind of packaging technology of nonisulated type power model (200), it comprises:
step (1), i.e. positioning step: specified location power model chip (220) being installed to copper base (210);
step (2), i.e. the first welding step: described power model chip (220) and described copper base (210) are welded together;
step (3), namely seals step: be installed together with shell (280) by the described copper base (210) being welded with described power model chip (220), and adopt fluid sealant (270) to carry out sealing to form hermetically-sealed construction; And
step (4), i.e. curing schedule: adopt epoxy resin (290), encapsulate the described hermetically-sealed construction formed by described sealing step, thus form described nonisulated type power model (200),
wherein, the second welding step can also be comprised before beginning step (3): on described power model chip (220) after completing steps (2), gate electrode (230) is welded on described power model chip (230), and makes described gate electrode 230 out exposed from described epoxy resin (290).
2.
the packaging technology of nonisulated type power model (200) as claimed in claim 1, it is characterized in that, described step (2) is carried out under vacuum conditions.
3.
the packaging technology of nonisulated type power model (200) as claimed in claim 1, it is characterized in that, after completing steps (4), also comprise outward appearance treatment step: bend shaping by the gate electrode (230) that described shell (280) exposes from described epoxy resin (290).
4. the packaging technology of nonisulated type power model (200) as claimed in claim 1, is characterized in that, described power model is thyristor module, diode (led) module, IGBT module or MOSFET module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201210052588.6A CN103295920B (en) | 2012-02-22 | 2012-02-22 | Nonisulated type power model and packaging technology thereof |
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| CN201210052588.6A CN103295920B (en) | 2012-02-22 | 2012-02-22 | Nonisulated type power model and packaging technology thereof |
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| CN103295920A CN103295920A (en) | 2013-09-11 |
| CN103295920B true CN103295920B (en) | 2016-04-27 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428342B (en) * | 2015-01-26 | 2019-02-12 | 湖北台基半导体股份有限公司 | A kind of high current power semiconductor modular |
| CN105161477B (en) * | 2015-08-14 | 2019-10-18 | 株洲南车时代电气股份有限公司 | A kind of planar power module |
| CN107301993A (en) * | 2017-06-08 | 2017-10-27 | 太极半导体（苏州）有限公司 | It is a kind of to increase the encapsulating structure and its manufacture craft of non-functional chip |
| CN111048474B (en) * | 2019-08-29 | 2021-07-16 | 宜兴市三鑫电子有限公司 | Preparation process for heat dissipation package of compact IGBT module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5892279A (en) * | 1995-12-11 | 1999-04-06 | Northrop Grumman Corporation | Packaging for electronic power devices and applications using the packaging |
| JP2003007969A (en) * | 2001-06-27 | 2003-01-10 | Toshiba Corp | Semiconductor module and power converter |
| CN101593707A (en) * | 2009-07-03 | 2009-12-02 | 无锡友达电子有限公司 | The method for packing that is used for high-power integrated circuit |
| CN202948921U (en) * | 2012-02-22 | 2013-05-22 | 江苏宏微科技有限公司 | Non-insulated type power module |
-
2012
- 2012-02-22 CN CN201210052588.6A patent/CN103295920B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5892279A (en) * | 1995-12-11 | 1999-04-06 | Northrop Grumman Corporation | Packaging for electronic power devices and applications using the packaging |
| JP2003007969A (en) * | 2001-06-27 | 2003-01-10 | Toshiba Corp | Semiconductor module and power converter |
| CN101593707A (en) * | 2009-07-03 | 2009-12-02 | 无锡友达电子有限公司 | The method for packing that is used for high-power integrated circuit |
| CN202948921U (en) * | 2012-02-22 | 2013-05-22 | 江苏宏微科技有限公司 | Non-insulated type power module |
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Address after: 213022 No. 18 middle Huashan Road, Xinbei District, Jiangsu, Changzhou Patentee after: MACMIC SCIENCE & TECHNOLOGY Co.,Ltd. Address before: 213022 No. 18 middle Huashan Road, Xinbei District, Jiangsu, Changzhou Patentee before: MACMIC SCIENCE & TECHNOLOGY Co.,Ltd. |
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