CN103295920A - Noninsulated type power module and packaging process thereof - Google Patents

Noninsulated type power module and packaging process thereof Download PDF

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Publication number
CN103295920A
CN103295920A CN 201210052588 CN201210052588A CN103295920A CN 103295920 A CN103295920 A CN 103295920A CN 201210052588 CN201210052588 CN 201210052588 CN 201210052588 A CN201210052588 A CN 201210052588A CN 103295920 A CN103295920 A CN 103295920A
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power module
non
step
chip
module
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CN 201210052588
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Chinese (zh)
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CN103295920B (en )
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郑军
周锦源
贺东晓
王涛
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江苏宏微科技有限公司
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The invention provides a noninsulated type power module which comprises a copper substrate, a power module chip located on a designated position of the copper substrate, a gate pole electrode led out of the power module chip, and an outer shell used for covering the copper substrate, the gate pole electrode and the power module chip, wherein the gate pole electrode is led out of the outer shell. The power module chip is directly welded to the copper substrate, and the electrode is welded to the power module chip. The noninsulated type power module is simple in structure and packaging process, easy to achieve, and capable of effectively reducing mechanical stress and thermal stress of a small module, and therefore reliability of the noninsulated type power module is improved.

Description

非绝缘型功率模块及其封装工艺 Its non-isolated power module packaging process

技术领域 FIELD

[0001] 本发明涉及半导体,尤其涉及非绝缘型功率模块及其封装技术。 [0001] The present invention relates to a semiconductor, in particular, it relates to a non-isolated power module and packaging technology.

背景技术 Background technique

[0002] 功率模块,按照其芯片与基板之间是电气绝缘的结构还是非绝缘的结构,分为绝缘型功率模块,和非绝缘型功率模块。 [0002] The power module according to the chip and the substrate are between the electrically insulating or non-insulating structure of a structure, into an insulating type power module, and a non-isolated power module.

[0003] 功率模块通常其基板用作公共电极,而且其具有正向压降低、浪涌电流大等特点,主要用于各类焊接机和开关电源。 [0003] The power module substrate which is usually used as a common electrode and having a forward voltage drop, surge current and other characteristics, mainly used for various types of welding machines and switching power supply.

[0004] 但是,正是由于功率模块通常工作在高电压、大电流条件下,因此,功率模块的散热就是通常必须考虑的一个问题。 [0004] However, a problem precisely because of the power module typically operate at high voltage, high current conditions, thus cooling the power module is typically must be considered.

发明内容 SUMMARY

[0005] 本发明的目的之一是提供一种非绝缘型功率模块及其的封装工艺,通过这种封装工艺制成的非绝缘型功率模块能够降低模块的热阻,从而提高功率模块的可靠性。 [0005] One object of the present invention is to provide a non-insulating type power module and the packaging process, the non-insulating type power module in such a packaging process is made possible to reduce the thermal resistance of the module, thereby improving the reliability of the power module sex.

[0006] 本发明的另一个目的是简化非绝缘型功率模块的结构,从而降低制造成本。 Another object of the [0006] present invention is to simplify the non-insulating type power module structure, thereby reducing manufacturing costs.

[0007] 按照本发明的一个方面,提供了一种非绝缘型功率的封装工艺。 [0007] According to an aspect of the present invention, there is provided a packaging process of the non-insulating type power. 下面以晶闸管芯片为例说明本发明的非绝缘型功率的封装工艺。 Here thyristor chip packaging technology as an example non-isolated power to the present invention. 它包含:步骤(I),即元器件定位步骤:将功率模块芯片220安装到铜基板210的指定位置处;步骤(2),即第一焊接步骤:将功率模块芯片220与铜基板210焊接在一起;步骤(3),即密封步骤:将焊接有功率模块芯片220的铜基板210与外壳280安装在一起,并采用密封胶270进行密封以形成密封结构;以及步骤(4),即固化步骤:采用环氧树脂290,封装由所述密封步骤形成的密封结构并固化之,从而形成本发明的非绝缘型功率模块200。 It comprises: a step (the I), i.e., component positioning step: the power module 220 is mounted to the chip at a designated location 210 of the copper substrate; step (2), i.e., a first welding step of: welding power module 220 and the copper substrate chip 210 together; step (3), i.e., the sealing steps of: welding with a power module substrate 220 of copper chips 210 mounted together with the housing 280, and using the sealant 270 for sealing to form a sealed structure; and a step (4), which solidified step: epoxy resin 290, the sealing structure of the package formed by the sealing step and curing it, so that the non-insulating type power module 200 is formed according to the present invention.

[0008] 按照本发明提供的非绝缘型功率模块200的封装工艺,其中,步骤(2)是在真空状态下进行的。 [0008] The packaging process according to the present invention provides a non-insulated type power module 200, wherein the step (2) is performed in a vacuum state.

[0009] 在之前非绝缘型功率模块200的封装工艺中,在完成步骤(2)之后且在开始步骤 [0009] In the packaging process before the non-isolated power module 200, after completion of step (2) and at the beginning of step

(3)之前还可以包括第二焊接步骤:在功率模块芯片220上,将门极电极230焊接到功率模块芯片230上,并且使门极电极230从环氧树脂290中裸露出来。 Prior to (3) may further comprise a second welding step: On-chip power module 220, the gate electrode 230 is welded to the power module chip 230, and the gate electrode 230 exposed from the epoxy resin 290.

[0010] 在本发明的非绝缘型功率模块200的封装工艺中,在完成步骤(4)之后,还可以包含外观处理步骤:将外壳280上从环氧树脂290中裸露出的门极电极230打弯成型。 [0010] In the packaging process non-isolated power module 200 of the present invention, after completion of step (4), further processing steps may comprise Appearance: an upper housing 280 exposed from the gate electrode 290 epoxy 230 clinching molding.

[0011] 在本发明的非绝缘型功率模块200的封装工艺中,功率模块可以是晶闸管模块、二极管模块、IGBT模块或MOSFET模块。 [0011] In the packaging process non-isolated power module 200 of the present invention, the power module may be a thyristor module, diode module, the IGBT module or a MOSFET module.

[0012] 按照本发明的第二个方面,提供了一种非绝缘型功率模块200,它包含:铜基板210 ;位于铜基板210指定位置处的功率模块芯片220 ;从功率模块芯片220引出的门极电极230 ;以及外壳280,用于罩盖铜基板210、门极电极230和功率模块芯片220 ;其中,功率模块芯片220直接焊接在铜基板210上,电极230焊接在功率模块芯片220上。 [0012] According to a second aspect of the present invention, there is provided a non-insulating type power module 200, comprising: a copper substrate 210; copper substrate 210 is located at a specified position 220 of the power module chip; drawn from the power module chip 220 gate electrode 230; and a housing 280 for the cover 210 of the copper substrate, the gate electrode 230 and the power module 220 chips; wherein, on a copper substrate 210, upper electrode 230 is welded to the power module 220 chips soldered directly to the power module chip 220 .

[0013] 按照本发明提供的非绝缘型功率模块200,其中,功率模块芯片220、门极电极230、铜基板210以及外壳280采用硅凝胶270密封,在硅凝胶270上采用环氧树脂290固化封装,以形成密封结构。 [0013] According to the present invention is to provide non-insulating type power module 200, wherein the power module chip 220, the gate electrode 230, a copper substrate 210 and a housing 280 made of silicon gel seal 270, epoxy 270 on a silica gel curing package 290 to form a seal structure.

[0014] 门极电极230最好从环氧树脂290中引出。 [0014] The gate electrode 230 is preferably withdrawn from an epoxy resin 290.

[0015] 在按照本发明的非绝缘型功率模块200中,门极电极230最好被打弯成型。 [0015] In accordance with the non-isolated power module 200 according to the present invention, the gate electrode 230 are preferably shaped to bend.

[0016] 在按照本发明的非绝缘型功率模块200中,非绝缘型功率模块200中的芯片220之间最好采用铝丝键合在起来。 [0016] In accordance with 200, between the non-isolated power module 200 is preferable to use aluminum wire bond chips 220 non-isolated power module in the present invention is laminated together.

[0017] 在按照本发明的非绝缘型功率模块200中,铜基板的厚度最好为3毫米。 [0017] In accordance with the non-insulated type power module 200 according to the present invention, the thickness of the copper substrate is preferably 3 mm.

附图说明 BRIEF DESCRIPTION

[0018]图1中示出现有技术中的绝缘型功率模块在封装时所采用的工艺步骤; Process steps art insulated power module when employed in the package [0018] FIG. 1 shows a;

[0019] 图2示出的是现有技术中绝缘型功率模块的内部结构示意图; [0019] FIG. 2 shows a schematic internal structure of the prior art insulated power module;

[0020] 图3中示出的是本发明的非绝缘型功率模块在封装时所采用的工艺步骤;以及 In [0020] FIG. 3 shows a process step of non-insulating type power module according to the present invention, when employed in the package; and

[0021] 图4示出的是采用本发明的封装工艺所形成的非绝缘型功率模块的内部结构示意图。 [0021] FIG. 4 shows a schematic internal structure of the non-insulated power module packaging process according to the present invention is formed using.

具体实施方式 detailed description

[0022] 下面参照附图,说明本发明实施例的非绝缘型功率模块及其封装工艺。 [0022] Referring to the drawings, and the non-isolated power module packaging process embodiment of the present invention.

[0023] 本领域中的普通技术人员能够理解,本发明中所采用的术语“功率模块”是一种泛指,它可以是晶闸管、二极管模块、IGBT模块或MOSFET模块等。 [0023] of ordinary skill in the art will appreciate that the present invention is employed, the term "power module" is a general reference, it may be a thyristor, a diode module, the IGBT module or a MOSFET module. 但为了描述方便起见,说明书的描述中,仅以“功率模块”来代表晶闸管、二极管模块、IGBT模块或MOSFET模块等。 However, for convenience of description, the description of the specification, only the "power module" to represent a thyristor, a diode module, the IGBT module or a MOSFET module.

[0024] 功率模块由于通常工作在大电流下,其本身的热阻会受很多因素的影响。 [0024] Since the power module typically operate at high current, thermal resistance itself can be affected by many factors. 例如,模块的散热条件、器件工作时的功率、焊接层的厚度以及焊接层的热膨胀系数等都会影响器件的热阻。 For example, the heat dissipation module, when the device is operating power, the thermal expansion coefficient and the thickness of the solder layer the solder layer will affect the resistance of the device.

[0025] 功率模块的热阻由下式给出: [0025] The thermal resistance of the power module is given by:

[0026] R= Δ T/P 式(I) [0026] R = Δ T / P of formula (I)

[0027] 其中,R是热阻; [0027] wherein, R is the thermal resistance;

[0028] Δ T是器件两端形成的温差; [0028] Δ T is the temperature difference across the device is formed;

[0029] P是器件由于所加电流和电压所引起的功率。 [0029] P is the power device due to the applied current and voltage caused.

[0030] 从式⑴可以看出,器件两端形成的温差越小,则热阻越小。 [0030] As can be seen from the formula ⑴, the smaller the temperature difference across the device is formed, the smaller the resistance. 因此,设法减小焊接层的厚度,可以减小器件两端的温差,从而大大减小功率器件的热阻。 Thus, trying to reduce the thickness of the solder layer, can reduce the temperature difference across the device, thereby greatly reducing the thermal resistance of the power device.

[0031] 图1示出的是现有技术的绝缘型功率模块封装工艺,而图2示出的是采用图1所示工艺所制成的现有技术的绝缘型功率模块的内部结构示意图。 [0031] FIG. 1 shows a power module package insulated prior art process, while FIG. 2 shows a schematic internal structure of the prior art process shown in Figure 1 is made of an insulating type power module.

[0032] 如图2所示,现有技术的绝缘型功率模块100包括铜基板110,其设置于功率模块100的底部。 [0032] 2, the prior art power module 100 includes an insulating substrate 110 of copper, which is provided at the bottom of the power module 100. 铜基板110上设置有直接键合铜DirectBonding Copper,DBC基板120。 There is provided a direct bond DirectBonding Copper copper copper substrate 110, DBC substrates 120. 一个或多个芯片140被贴装在DBC基板120的预定位置上,经封装后形成绝缘型功率模块100。 Or a plurality of chips 140 are mounted at predetermined positions on the DBC substrate 120, the insulating power module 100 is formed after encapsulation.

[0033] 芯片140通过铝丝连接桥150在模块内部进行引线连接。 [0033] chip 140 connected to lead 150 by aluminum wire inside the module bridges. 弯折电极130由弯折铜片形成。 Folded electrode 130 is formed of bent copper sheet. 铜片的一端弯折地接触于DBC基板120的表面上的芯片上,其另一端在功率模块的上表面弯折形成弯折电极130。 One end of bent copper contact surface on the chip on a DBC substrate 120 and the other end on the surface of the power module 130 is bent to form the bent electrode.

[0034] 另外,功率模块100还包括包覆铜基板110等的外壳180。 [0034] Further, the power module 100 further includes a copper-clad substrate 110 like the housing 180. 外壳180的内部填充有硅凝胶170,功率模块100还包括外壳盖板190。 Interior of the housing 180 is filled with a silicone gel 170, power module 100 further includes a housing cover 190.

[0035] 图1示出图2所示现有技术的功率模块至少需要通过以下エ艺步骤来形成: [0035] Figure 1 shows a prior art power module shown in FIG 2 needs to be formed at least by the following process steps Ester:

[0036] (I)将芯片140安装到DBC基板120的指定位置处; [0036] (I) to the chip 140 is mounted at a prescribed position of the DBC substrate 120;

[0037] (2)将DBC基板120焊接至铜基板110的预定位置上; [0037] (2) The DBC substrate 120 is welded to a predetermined position on a copper substrate 110;

[0038] (3)通过铝丝键合,将ー个芯片与另一芯片连接起来; [0038] (3) by aluminum wire bonding, the chip and another chip ー connected;

[0039] (4)给铜基板110等加上外壳180 ; [0039] (4) coupled to the copper substrate 110 like the housing 180;

[0040] (5)给加了外壳180的功率模块灌胶、密封; [0040] (5) added to the housing 180 of the power module potting, sealing;

[0041] (6)加上外壳盖板190,并进ー步密封封装; [0041] (6) together with the housing cover 190, and thus step ー sealed package;

[0042] (7)在外壳盖板上将弯折电极130打弯成型。 [0042] (7) in the electrode plate 130 is bent on the clincher housing molding.

[0043] 从图1和图2可以看出,现有技术的绝缘型功率模块在工作吋,由于先将芯片140焊接在DBC基板120上,然后再将DBC基板120焊接在铜基板110之上,因而其热阻较大,散热问题难以解決。 [0043] As can be seen from Figures 1 and 2, prior art insulated power modules work in inches, since the first chip 140 is welded to the DBC substrate 120, and then welded DBC substrate 120 over a copper substrate 110 and thus the thermal resistance is large, the heat problem difficult to solve.

[0044] 另外,由于上述エ艺步骤中,在灌胶密封时,需要加上外壳盖板190,因而结构复杂、成本较高。 [0044] Further, since the above-described process steps Ester, when the potting seal, the need to add the enclosure cover 190, and thus a complicated structure, high cost.

[0045] 为了解决这ー问题,本发明中采用将芯片与铜基板直接焊接,来代替原有的将芯片焊接在DBC上而后再将DBC焊接在铜基板上的エ艺步骤,并且采用环氧树脂对功率模块进行塑封,来代替原有的灌胶エ艺。 [0045] In order to solve this problem ー, employed in the present invention, the chip and the copper substrate directly welded, to replace the original chip is welded to the DBC DBC then then welded copper substrate Ester process steps, and epoxy plastic resin power module, to replace the original glue Ester arts.

[0046] 本发明的封装エ艺如图3所示。 Ester package Art [0046] the present invention is shown in Fig.

[0047] 如图3所示,本发明的非绝缘型功率模块封装エ艺包括下述步骤: [0047] 3, non-isolated power module package according to the present invention comprises the steps of Ester Arts:

[0048] 步骤(I),即元器件定位步骤:将功率模块芯片220安装到铜基板210的指定位置处; [0048] Step (I), i.e., component positioning step: the power module 220 is mounted to the chip at a designated location 210 of the copper substrate;

[0049] 步骤(2),即第一焊接步骤:将功率模块芯片220与铜基板210焊接在一起; [0049] Step (2), i.e., a first step of welding: welding power module chips 220 and 210 together with the copper substrate;

[0050] 步骤(3),即密封步骤:将焊接有功率模块芯片220的铜基板210与一外壳280安装在一起,并采用密封胶270进行密封; [0050] Step (3), i.e., the sealing steps of: welded chip power module 210 and the copper substrate 280 mounted with a housing 220, and using the sealant 270 for sealing;

[0051] 步骤(4),即固化步骤:采用环氧树脂290,封装铜基板210并使环氧树脂固化。 [0051] Step (4), i.e. the curing step: epoxy resin 290, the package substrate 210 and copper epoxy curing.

[0052] 在本发明的上述エ艺中,将功率模块芯片220与铜基板210焊接在一起是在真空状态下进行的。 [0052] In the present invention, Ester arts, the welding power module chip 220 and the substrate 210 together with copper is carried out under vacuum.

[0053] 在完成将功率模块芯片220与铜基板210焊接在一起以后,还可以包括ー个第二焊接步骤:在所述功率模块芯片220上,将门极电极230焊接到功率模块芯片220上,并且使门极电极230从环氧树脂290中裸露出来。 [0053] In the power module is completed with the chip 220 and the substrate 210 after the welding of copper, may also include a second welding step ー: chip on the power module 220, the gate electrode 230 is welded to the power module 220 chips, and the gate electrode 230 exposed from the epoxy resin 290.

[0054] 另外,在上述完成固化步骤以后,还可以包含ー个外观处理步骤,S卩,将外壳280上的裸露电极打弯成型。 [0054] Further, after the completion of the curing step described above, it may contain a look ー processing step, S Jie, the exposed electrode housing 280 forming clinching.

[0055] 通过如图3所示的エ艺步骤,就可以形成本发明的非绝缘型功率模块。 [0055] Ester through process steps shown in Figure 3, can be formed non-insulating type power module according to the present invention.

[0056] 图4中示出采用本发明的非绝缘型功率模块封装エ艺所形成的本发明的非绝缘型功率模块的内部结构示意图。 In [0056] FIG. 4 shows the present invention, non-insulated type power module in the non-insulated interior schematic structure of the power module of the present invention is formed by packaging arts Ester.

[0057] 将图4与图2比较后可以看出,本发明的非绝缘型功率模块的内部结构与图2所示现有技术的绝缘型功率模块的内部结构的不同点在于,现有技术中的绝缘型功率模块中是带有DBC基板的,而图4所示的本发明的非绝缘型功率模块中,是不带有DBC基板,即芯片是直接焊接在铜基板上的。 [0057] The comparison can be seen in FIG. 2 and FIG. 4 differs from the internal configuration of the insulated power module internal structure shown in FIG. 2 prior art non-isolated power module according to the present invention, the prior art the power module is insulated with a DBC substrate, and FIG non-isolated power module according to the present invention shown in FIG. 4, not with the DBC substrate, i.e., the chip is soldered directly to the copper substrate. [0058] 如图4所示,本发明的非绝缘型功率模块包含: [0058] 4, the non-isolated power module according to the present invention comprises:

[0059]铜基板 210; [0059] 210 the copper substrate;

[0060] 位于铜基板210指定位置处的功率模块芯片220 ;以及 [0060] The copper substrate 210 located at a specified position 220 of the power module chip; and

[0061] 从功率模块芯片引出的门极电极230, [0061] The power module from the gate electrode 230 of the chip lead,

[0062] 外壳280,用于罩盖住铜基板、门极电极和功率模块芯片,并且门极电极230从外壳引出; [0062] The housing 280, a cover for covering the copper substrate, the gate electrode of the power module and the chip, and the gate electrode 230 drawn out from the housing;

[0063] 其中,功率模块芯片220和门极电极230是直接焊接在铜基板210上的,并且 [0063] wherein, the power module 220 and the gate electrode chip 230 is soldered directly to the copper substrate 210, and

[0064] 其中,先用硅凝胶270密封功率模块芯片220、铜基板210以及与功率模块芯片220相耦联的门极电极230 —端以形成一个密封结构,然后在硅凝胶270上用环氧树脂290固化封装整个密封结构,从而形成非绝缘型功率模块200。 [0064] wherein the first seal 270 with silicone gel chip power module 220, a copper substrate 210 and a chip power module 220 coupled gate electrode 230 - terminal structure to form a seal, and then on silica gel with 270 290 epoxy curing encapsulate the entire seal structure, such that the non-insulated power module 200 is formed. 因此环氧树脂290置于硅凝胶270之上,形成固化密封模块,其与外壳280共同保护非绝缘型功率模块200的内部结构。 Thus epoxy resin placed on the silicone gel 290 270, form an internal structure of the cured seal module, which together with the housing 280 to protect non-insulating type power module 200.

[0065]另外,在图2所示的现有技术的绝缘型功率模块100的内部结构中,功率模块芯片140与另一功率模块芯片140之间是可以采用铝丝150键合在一起。 [0065] Further, the internal structure of the prior art shown in FIG. 2 the isolated power module 100, the power module 140 and the other chip power module 140 can be employed between the chips aluminum wire 150 are bonded together. 与图2相比,图4所示的本发明的非绝缘型功率模块200的内部结构中,并没有示出这种采用铝丝键合的模块结构。 Compared with FIG. 2, FIG. 4 shows an internal configuration of the non-isolated power module 200 of the present invention, it does not show such a modular structure aluminum wire bonding.

[0066] 但是,本领域中的普通技术人员可以理解,在具体的电路结构中,本发明的非绝缘型功率模块200中也可以采用铝丝将某一芯片与另一芯片按电路要求键合起来的。 [0066] However, those of ordinary skill in the art can be appreciated, the specific circuit configuration, the non-insulated type power module according to the present invention, the aluminum wire 200 may be employed a circuit chip and the other chips are bonded to the requirements up.

[0067] 从上述本发明的工艺步骤中可以看出,由于非绝缘型功率模块的特殊结构(即非绝缘型)使其压降很低,而且焊接层厚度主要因为没有使用DBC而比绝缘型模块要薄很多,这样更有利于模块的散热,从而使得其热阻大大降低。 [0067] As can be seen from the above-described process steps of the present invention, due to the special structure of the non-insulated power module (i.e., non-insulated) so that the pressure drop is low, but primarily because the solder layer thickness ratio is not used and insulated DBC module is much thinner, and more conducive to a heat dissipation module, such that the thermal resistance is greatly reduced. 在一优选实施例中,还可以减薄铜基板210的厚度以进一步降低热阻,例如,将铜基板210的厚度设置在3毫米左右。 In a preferred embodiment, it may further reduce the thickness of the copper substrate 210 to further reduce the thermal resistance, for example, the thickness of the copper substrate 210 is disposed about 3 millimeters.

[0068] 此外,采用环氧树脂290代替图2所示的外壳盖板190,结构简单,并且工艺简单,易于实现,而且使用环氧树脂胶密封可有效地减小模块的机械应力和热应力,从而能提高非绝缘型功率模块工作时的可靠性。 [0068] Further, instead of the epoxy resin 290 covers the housing 190 as shown in FIG. 2, the structure is simple, and the process is simple, easy to implement, and the use of epoxy sealant can effectively reduce mechanical stress and thermal stress modules , thereby improving the reliability of the non-isolated power module work.

[0069] 上文中,参照附图描述了本发明的具体实施例。 [0069] In the above, the figures described specific embodiments of the present invention with reference to embodiments. 但是,本领域中的普通技术人员能够理解,在不偏离本发明的原理和精神的情况下,还可以对本发明的上述实施例作某些修改和变更。 However, those skilled in the art will appreciate, without departing from the principles and spirit of the present invention, certain modifications may be made to the above embodiments and variations of the present invention. 实施例的描述仅仅是为了使本领域中的普通技术人员能够理解、实施本发明,不应当将本发明理解为仅仅限于所描述的实施例。 Described embodiments are merely presented to enable one of ordinary skill in the art will appreciate that embodiments of the present invention, the present invention should not be construed as limited to the described embodiments. 本发明的保护范围由权利要求书所限定。 The scope of the invention as defined by the claims.

Claims (12)

  1. 1.一种非绝缘型功率模块200的封装エ艺,它包含: 步骤(I),即定位步骤:将功率模块芯片220安装到铜基板210的指定位置处; 步骤(2),即第一焊接步骤:将所述功率模块芯片220与所述铜基板210焊接在一起; 步骤(3),即密封步骤:将焊接有所述功率模块芯片220的所述铜基板210与外壳280安装在一起,并采用密封胶270进行密封以形成密封结构;以及步骤(4),即固化步骤:采用环氧树脂290,封装由所述密封步骤形成的所述密封结构,从而形成所述非绝缘型功率模块200。 A non-isolated power module package 200 Ester arts, which comprises: Step (the I), i.e. the positioning step: the power module 220 is mounted to the chip at a designated location 210 of the copper substrate; step (2), i.e., a first welding steps of: welding the chip 220 and the power module substrate 210 with the copper; step (3), i.e., a sealing step of: welding with a chip of the power module 210 of the copper substrate 220 mounted with the housing 280 and using the sealant 270 for sealing to form a sealed structure; and a step (4), i.e. the curing step: epoxy resin 290, the structure of the package seal formed by the sealing step, thereby forming a non-insulated type power module 200.
  2. 2.如权利要求1所述的非绝缘型功率模块200的封装エ艺,其特征在于,所述步骤(2)是在真空状态下进行的。 Non-isolated power module package of claim 1 Ester arts as claimed in claim 200, wherein said step (2) is performed in a vacuum state.
  3. 3.如权利要求1或2所述的非绝缘型功率模块200的封装エ艺,其特征在于,在完成步骤(2)之后且在开始步骤(3)之前还可以包括第二焊接步骤:在所述功率模块芯片220上,将门极电极230焊接到所述功率模块芯片230上,并且使所述门极电极230从所述环氧树脂290中裸露出来。 3. The non-isolated power module as claimed in claim 1 or 2, the packaging arts Ester 200, wherein, and may also include a second welding step after the completion of step (2) begins before step (3): in the chip of the power module 220, the gate electrode 230 of the power module is soldered to the chip 230, and the gate electrode 230 exposed out of the 290 epoxy.
  4. 4.如权利要求3所述的非绝缘型功率模块200的封装エ艺,其特征在干,在完成步骤(4)之后,还包含外观处理步骤:将所述外壳280上从所述环氧树脂290中裸露出的门极电极230打弯成型。 3, 4. The non-isolated power module package of claim 200 Ester arts, wherein the dry, after the completion of step (4), further comprising the step of processing the appearance: the upper housing 280 from the epoxy 290 bare resin gate electrode 230 formed clincher.
  5. 5.如权利要求1所述的非绝缘型功率模块200的封装エ艺,其特征在于,所述功率模块是晶闸管模块、ニ极管模块、IGBT模块或MOSFET模块。 5. The non-isolated power module package of claim 1 Ester arts of claim 200, wherein the thyristor module is a power module, ni diode module, the IGBT module or a MOSFET module.
  6. 6.一种非绝缘型功率模块200,它包含: 铜基板210 ; 位于所述铜基板210指定位置处的功率模块芯片220 ; 从所述功率模块芯片220引出的门极电极230 ;以及外壳280,用于罩盖所述铜基板210、门极电极230和所述功率模块芯片220 ; 其中,所述功率模块芯片220直接焊接在所述铜基板210上,所述门极电极230焊接在所述功率模块芯片220上。 A non-isolated power module 200, comprising: a copper substrate 210; 210 is located at a specified position of the power module substrate of copper chips 220; chip from the gate of the power module 220 of the lead electrode 230; and a housing 280 configured to cover the copper substrate 210, the gate electrode 230 and the chip 220 to the power module; wherein the power module is soldered directly to the chip 220 of the copper substrate 210, the gate electrode 230 is welded to the said power module 220 chips.
  7. 7.如权利要求6所述的非绝缘型功率模块200,其特征在干, 其中,所述功率模块芯片220、所述门极电极230、所述铜基板210以及所述外壳280采用硅凝胶270密封,在所述硅凝胶270上采用环氧树脂290固化封装,以形成密封结构。 7. The non-isolated power module as claimed in claim 6 200, wherein dry, wherein the power module chip 220, the gate electrode 230, the substrate 210 and the copper shell 280 made of silicon condensate rubber seal 270, encapsulated in a cured epoxy 290 on the silicon gel 270 to form a seal structure.
  8. 8.如权利要求7所述的非绝缘型功率模块200,其特征在于,所述门极电极230从所述环氧树脂290中引出。 Non-isolated power module of claim 7 as claimed in claim 200, wherein the gate electrode 230 is extracted from the epoxy resin 290.
  9. 9.如权利要求8所述的非绝缘型功率模块200,其特征在于,所述门极电极230被打弯成型。 9. The non-isolated power module 200 according to claim 8, characterized in that the gate electrode 230 is formed to bend.
  10. 10.如权利要求6至8中任ー权利要求所述的非绝缘型功率模块200,其特征在干,所述非绝缘型功率模块200中的芯片220之间采用铝丝键合在起来。 10. ー claimed in any claim of claims 6 to 8 non-isolated power module of claim 200, wherein dry, use of aluminum wire bond between the non-isolated power module 200 in the chip 220 bonded together.
  11. 11.如权利要求6所述的非绝缘型功率模块200,其特征在于,所述铜基板的厚度为3毫米。 11. The non-isolated power module as claimed in claim 6 200, wherein a thickness of the copper substrate of 3 mm.
  12. 12.如权利要求6所述的非绝缘型功率模块,其特征在干,所述功率模块是晶闸管模块、ニ极管模块、IGBT模块或MOSFET模块。 12. The non-isolated power module according to claim 6, characterized in that the dry, the thyristor module is a power module, ni diode module, the IGBT module or a MOSFET module.
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CN105161477A (en) * 2015-08-14 2015-12-16 株洲南车时代电气股份有限公司 Planar power module
CN105428342A (en) * 2015-01-26 2016-03-23 湖北台基半导体股份有限公司 High-current power semiconductor module

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JP2003007969A (en) * 2001-06-27 2003-01-10 Toshiba Corp Semiconductor module and power converter
CN101593707A (en) * 2009-07-03 2009-12-02 无锡友达电子有限公司 Packaging method used for high-power integrated circuit
CN202948921U (en) * 2012-02-22 2013-05-22 江苏宏微科技有限公司 Non-insulated type power module

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US5892279A (en) * 1995-12-11 1999-04-06 Northrop Grumman Corporation Packaging for electronic power devices and applications using the packaging
JP2003007969A (en) * 2001-06-27 2003-01-10 Toshiba Corp Semiconductor module and power converter
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CN105428342A (en) * 2015-01-26 2016-03-23 湖北台基半导体股份有限公司 High-current power semiconductor module
CN105161477A (en) * 2015-08-14 2015-12-16 株洲南车时代电气股份有限公司 Planar power module

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