CN108172617A - A kind of circle large scale igbt chip crimping encapsulating structure and manufacturing method - Google Patents
A kind of circle large scale igbt chip crimping encapsulating structure and manufacturing method Download PDFInfo
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- CN108172617A CN108172617A CN201711410556.8A CN201711410556A CN108172617A CN 108172617 A CN108172617 A CN 108172617A CN 201711410556 A CN201711410556 A CN 201711410556A CN 108172617 A CN108172617 A CN 108172617A
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- emitter
- metal
- igbt chip
- molybdenum sheet
- encapsulating structure
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- 238000002788 crimping Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 105
- 239000002184 metal Substances 0.000 claims abstract description 105
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 79
- 230000000712 assembly Effects 0.000 claims abstract description 18
- 238000000429 assembly Methods 0.000 claims abstract description 18
- 238000003466 welding Methods 0.000 claims abstract description 16
- 238000002955 isolation Methods 0.000 claims abstract description 10
- 238000005192 partition Methods 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 10
- 238000005538 encapsulation Methods 0.000 claims description 9
- 239000002344 surface layer Substances 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000012360 testing method Methods 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 238000009826 distribution Methods 0.000 abstract description 5
- 230000005855 radiation Effects 0.000 abstract description 5
- 230000008859 change Effects 0.000 abstract description 3
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 8
- 238000013461 design Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- XMTQQYYKAHVGBJ-UHFFFAOYSA-N 3-(3,4-DICHLOROPHENYL)-1,1-DIMETHYLUREA Chemical compound CN(C)C(=O)NC1=CC=C(Cl)C(Cl)=C1 XMTQQYYKAHVGBJ-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003137 locomotive effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/54—Providing fillings in containers, e.g. gas fillings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/20—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device gaseous at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Die Bonding (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
A kind of round large scale igbt chip crimping encapsulating structure of Invention Announce and manufacturing method, include the emitter end cap set gradually from top to bottom, emitter molybdenum sheet, grid spring needle assemblies, gate metal, emitter molybdenum sheet locating rack, flexible conductive sheet metal, emitter metal, igbt chip, collector electrode metal, collector with location hole molybdenum sheet, collector end cap etc..Using this crimping encapsulating structure, failure sector isolation method is simple, and it is insulating trip, and the specific junction of chip surface gate metal is cut off only to need to change the fan-shaped conductive molybdenum sheet of faulty section；Device carries out two-side radiation by collector end cap and emitter end cap；Without metallic bond zygonema and weld interface, traditional devices bonding point and the bottleneck of welding layer fatigue failure are eliminated, it is stronger to the resistance of thermal mechanical fatigue；Device inside is designed using symmetrical structure, reduces internal each fanned partition stray inductance, and stray inductance distribution is made to reach unanimity, reduces the parasitic parameter of module, improves the electric property of device.
Description
Technical field
The present invention relates to field of semiconductor manufacture more particularly to a kind of round large scale igbt chip crimping encapsulating structure and
Its manufacturing method.
Background technology
Insulated gate bipolar transistor（Insulated Gate Bipolar Transistor, abbreviation IGBT）It is a kind of
Combine metal-oxide semiconductor fieldeffect transistor（MOSFET）With the power electronics device of bipolar junction transistor advantage
Part, IGBT are widely used with its excellent performance, greatly improve the performance of power electronic equipment and system.
It is also higher and higher to the performance requirement of IGBT device with the continuous extension of application field, and the prior art exists
Following defect：1st, device power grade is on the one hand required to improve, with high-power electric locomotive traction, electric power power transmission and transformation system, new
The fields such as the energy, national defence heavy industry be representative, with the raising of system design capacity, traditional IGBT device cannot meet the requirements or
More connection in series-parallel applications are needed, cause the increase of system cost and bring low reliability equivalent risk；2nd, on the other hand in view of system
The considerations of safety in operation and design, maintenance cost, the promotion of active demand IGBT device reliable life.
Traditional welding encapsulation type IGBT device is due to the techniques such as the design factors such as heat dissipation, stress and welding, wire bonding
The limitation of condition, power grade cannot be promoted significantly；Concurrently there are lead come off, layer degenerate etc. drawn by thermal-mechanical stress
The failure bottleneck risen cannot gradually meet the high power densities such as flexible DC power transmission, Large Scale Oceanic Wind Power Generation grade, highly reliable
Property application demand.High-power compression joint type IGBT device is without lead, welding layer and the ability for having two-side radiation, individual devices
Power capacity, reliability be substantially improved, the trend of substituted traditional welding embedding type IGBT device, becomes high-end at present
One of preferred device of application field.
At present, commercialized compression joint type IGBT device particularly may be divided into boss using multi-chip crimp type encapsulating structure
Two kinds of structure types of formula and spring.The former is with Toshiba, IXYS and middle vehicle（The Dynex of purchase）To represent, the latter is using ABB as generation
Table.
Toshiba, IXYS and middle vehicle（The Dynex of purchase）Deng using projective table type multichip packaging structure form, three's technology
Route is similar.Wherein, the injection reinforced insulation gate transistor of Toshiba's production（IEGT）Device provides multi-chip crimping envelope
Dress（PPI is encapsulated）, all electrical connections of device inside are all realized by pressure；Subsidiary of Britain under IXYS house flags
The multi-chip crimp type IGBT module that Westcode is used（SPT+Press-Pack）, it is the base in crimp type thyristor and GTO
It is developed on plinth, the multiple igbt chips of IGBT module internal parallel and FRD chips；Zhong Che companies（The Dynex of purchase）It adopts
Multi-chip crimps encapsulating structure form and above-mentioned company is essentially identical.The inside modules of such crimp type encapsulating structure are multiple
Igbt chip is arranged on same plane in the form of an array, and inside sets multiple chip positioning devices, passes through upper and lower both sides molybdenum plate
Igbt chip is equably crimped from both sides.The collector and emitter of each igbt chip leads under the action of mechanical pressure
Molybdenum plate copper electrode corresponding with crimp type shell is crossed to contact.Such crimp type encapsulating structure is pressurized to each chip of its internal parallel
The coherence request of power is higher, and the size of pressure can directly affect contact resistance and thermal contact resistance between each contact surface.To protect
The pressure for demonstrate,proving all chips is consistent, needs strictly to control the consistency of thickness of each submodule all parts in the block, thus bring
Module packaging cost improve and reduce IGBT device reliability, limit the encapsulation of traditional multi-chip crimp type to a certain extent
The use of module.
ABB AB uses spring encapsulation technology（StakPak technologies）.There is respectively each submodule chip in StakPak technologies
From independent contact probe and contact spring, using spring come the pressure of balancing device, internal each chip has independent spring
Contact makes the pressure of each chip surface keep uniform.But this packing forms is susceptible to spring fatigue, spring stress pine
Relaxation, abrasion and pressure are unequal, and relaxing of spring can lead to grid probe and gate surface loose contact, and then increase contact electricity
Resistance improves junction temperature, accelerates component failure, reduces IGBT device reliability.
Invention content
The purpose of the present invention is in view of the above problems, providing a kind of round large scale igbt chip crimping encapsulating structure and system
Method is made, after solving existing IGBT crimping encapsulating structure needs to carry out the chip in whole wafer cutting, and detection is selected
Independent injecting glue is packaged again, complicated for operation, and matching requirements are high, and stray parameter influences the problem of apparent, is conducive to expand single
Device power grade.
In order to achieve the above object, the technical solution adopted by the present invention is：A kind of circle large scale igbt chip crimping encapsulation
Structure, encapsulating structure include the emitter end cap set gradually from top to bottom（1）, emitter molybdenum sheet（2）, grid spring needle assemblies
（3）, gate metal（9）, emitter molybdenum sheet locating rack（4）, flexible conductive sheet metal（10）, emitter metal（11）、IGBT
Chip（12）, collector electrode metal（14）, collector band location hole molybdenum sheet（13）, positioning pin（7）, collector end cap（14）, cushion rubber
（5）, metal shirt rim（8）And ceramic cartridge（6）；Wherein igbt chip（12）Top surface be provided with emitter metal layer and grid gold
Belong to layer, bottom surface is provided with collector electrode metal layer；Igbt chip（12）The emitter metal on top surface surface layer（11）With gate metal（9）
It is connected, and emitter metal in a manner that special multiple spot is connected with face（11）Successively with flexible conductive sheet metal
（10）, emitter molybdenum sheet（2）With emitter end cap（1）It is connected, passes through emitter molybdenum sheet locating rack（4）On fan-shaped pylone consolidate
It is fixed；Gate metal（9）With grid spring needle assemblies（3）It is connected, grid spring needle assemblies（3）Across emitter molybdenum sheet locating rack
（4）And ceramic cartridge（6）；Igbt chip（12）The collector electrode metal on bottom surface surface layer（15）Successively with collector with location hole molybdenum sheet
（13）With collector terminal lid（14）It is connected；Igbt chip（12）, emitter molybdenum sheet（2）, collector band location hole molybdenum sheet（13）、
Grid spring needle assemblies（3）And the direct pressures such as metal end of connection thereon contact interconnection；Device inside is using symmetrical
Structure design, and entire module by cold welding crimp hermetically sealed, and fills inert gas.
Further, the igbt chip（12）For round large size chip, and fanned partition is carved on surface.
Further, the inert gas of the inside configuration filling is nitrogen.
Further, the mode that the special multiple spot is connected with face is：Connect igbt chip（12）Top surface surface layer
Emitter metal（11）For uniformly distributed multiple partitions sector structure and with the gate metal of multiple strip structures（9）Using multiple spot
The mode being connected with face is connect.
Further, the emitter molybdenum sheet（2）For multiple independent fan-shaped molybdenum sheet compositions, emitter molybdenum sheet（2）With hair
Emitter-base bandgap grading end cap（1）On fan-shaped protrusion homalographic contact.
Further, emitter molybdenum sheet locating rack（4）On be reserved with for fixed placement emitter molybdenum sheet（2）It is led with softness
Electric metal thin slice（10）Fan-shaped pylone, and by fan-shaped pylone by emitter end cap（1）It is fixed.
Further, the flexible conductive sheet metal（10）For multiple independent fan-shaped flexible conductive sheet metals, and
It is contacted with emitter molybdenum sheet and emitter metal homalographic.
The manufacturing method that the present invention uses：A kind of manufacturing method of circle large scale igbt chip crimping encapsulating structure, is adopted
With above-mentioned crimping encapsulating structure, production method is：
The first step makes each section parts needed for encapsulation；
Second step is stacked and is encapsulated by structure feature requirement：Entirely module by cold welding crimp hermetically sealed, and
Fill nitrogen inert gas；
Third walks, and forms final products and encapsulates.
Further, if a certain sector is judged as failure sector after testing, by replacing emitter molybdenum sheet（2）Go up certain
The fan-shaped conductive molybdenum sheet of a faulty section realizes the isolation of failure sector for insulating trip.
Further, it in the isolation for realizing failure sector, needs igbt chip（12）Areal gate metal（9）With
Emitter metal（11）Junction cut-out.
Beneficial effects of the present invention：The present invention provides a kind of round large scale igbt chip crimping encapsulating structure and manufactures
Method, solving existing IGBT crimping encapsulating structure needs to carry out the chip in whole wafer cutting, and detect and select rear list
Only injecting glue is packaged again, complicated for operation, and matching requirements are high, and stray parameter influences the problem of apparent, is conducive to expand single device
Part power grade.
1st, using round large scale igbt chip crimping encapsulating structure of the invention, failure sector isolation method is easy to operate,
Corresponding failure area conduction molybdenum sheet is only needed to change as insulating trip, and by igbt chip areal gate metal and the specific company of emitter metal
Connect place's cut-out.
2nd, it is designed inside high-power crimping packaging using symmetrical structure, compared with other crimping packagings, this sets
Counting structure reduces internal each fanned partition stray inductance distribution, and stray inductance distribution is made to reach unanimity, reduces the parasitic ginseng of module
Number.
3rd, the collector electrode metal of high-power crimping packaging and emitter metal are by corresponding each pole molybdenum sheet and accordingly
Metal end connects；Not only it realizes electrical connection but also realizes two-side radiation, possess the heat transfer for being much better than normal welding embedding device
Ability.
4th, since each component of device inside is directly connected to by pressure, no wire bonding and welding layer eliminate traditional device
Part bonding point and welding layer are stronger to the resistance of thermal mechanical fatigue because of the bottleneck of fatigue failure, substantially increase module severe
Carve the long-term reliability under application environment.
Description of the drawings
Fig. 1 crimps the half-sectional vertical view of encapsulating structure for a kind of round large scale igbt chip of the present invention.
Fig. 2 crimps the half-sectional bottom view of encapsulating structure for a kind of round large scale igbt chip of the present invention.
Fig. 3 is emitter metal of the present invention and gate metal type of attachment panorama sketch.
Fig. 4 is emitter metal of the present invention and gate metal type of attachment Local map.
Fig. 5 is emitter end cap of the present invention and emitter molybdenum sheet connection diagram.
Fig. 6 is emitter end cap of the present invention, emitter molybdenum sheet, emitter molybdenum sheet locating rack, flexible conductive metal and IGBT
Chip connection diagram.
Fig. 7 is grid spring needle assemblies of the present invention, gate metal, igbt chip and ceramic cartridge connection diagram.
Fig. 8 is igbt chip of the present invention, collector molybdenum sheet and collector terminal lid connection diagram.
Label character described in figure is expressed as：1st, emitter end cap；2nd, emitter molybdenum sheet；3rd, grid spring needle assemblies；4、
Emitter molybdenum sheet locating rack；5th, cushion rubber；6th, ceramic cartridge；7th, positioning pin；8th, metal shirt rim；9th, gate metal；10th, flexible conductive
Sheet metal；11st, emitter metal；12nd, igbt chip；13rd, collector band location hole molybdenum sheet；14th, collector end cap；15th, collect
Electrode metal.
Specific embodiment
In order to which those skilled in the art is made to more fully understand technical scheme of the present invention, below in conjunction with the accompanying drawings to the present invention into
Row detailed description, the description of this part is only exemplary and explanatory, should not there is any limitation to protection scope of the present invention
Effect.
As depicted in figs. 1 and 2, a kind of round large scale igbt chip crimping encapsulating structure provided in this embodiment, packet
Include the emitter end cap 1 set gradually from top to bottom, emitter molybdenum sheet 2, grid spring needle assemblies 3, gate metal 9, emitter
Molybdenum sheet locating rack 4, flexible conductive sheet metal 10, emitter metal 11, igbt chip 12, collector electrode metal 14, collector band
Location hole molybdenum sheet 13, positioning pin 7, collector end cap 14, cushion rubber 5, metal shirt rim 8 and ceramic cartridge 6.
The top surface of wherein igbt chip 12 is provided with emitter metal layer and gate metal layer, and bottom surface is provided with collector gold
Belong to layer；The side that the emitter metal 11 on 12 top surface surface layer of igbt chip is connected with gate metal 9 using special multiple spot with face
Formula connects, and emitter metal 11 is connected successively with flexible conductive sheet metal 10, emitter molybdenum sheet 2 and emitter end cap 1,
It is fixed by the fan-shaped pylone on emitter molybdenum sheet locating rack 4；Gate metal 9 is connected with grid spring needle assemblies 3, grid spring
Needle assemblies 3 pass through emitter molybdenum sheet locating rack 4 and ceramic cartridge 6；The collector electrode metal 15 on 12 bottom surface surface layer of igbt chip is successively
It is connected with collector band location hole molybdenum sheet 13 and collector terminal lid 14；Igbt chip 12, emitter molybdenum sheet 2, collector band are determined
The direct pressures contact interconnections such as position hole molybdenum sheet 13, grid spring needle assemblies 3 and the metal end of connection thereon；Device inside
It is designed using symmetrical structure, and entire module by cold welding crimp hermetically sealed, and fills inert gas.
Preferably, the igbt chip 12 is round large size chip, and fanned partition is carved on surface.
Preferably, the inert gas of the inside configuration filling is nitrogen.
Preferably, the mode that the special multiple spot is connected with face is：Connect the transmitting on 12 top surface surface layer of igbt chip
Pole metal 11 is the sector structure of uniformly distributed multiple partitions and is connected with the gate metal 9 of multiple strip structures using multiple spot with face
The mode connect connects.
Preferably, it is reserved on emitter molybdenum sheet locating rack 4 for fixed placement emitter molybdenum sheet 2 and flexible conductive metal
The fan-shaped pylone of thin slice 10, and fixed emitter end cap 1 by fan-shaped pylone.
Preferably, the flexible conductive sheet metal 10 be multiple independent fan-shaped flexible conductive sheet metals, and with hair
Emitter-base bandgap grading sector molybdenum sheet 2 and the contact of 11 homalographic of emitter metal.And flexible conductive sheet metal it is preferable in the case of be silver foil.
As shown in figure 5, emitter sector molybdenum sheet 2 is multiple independent fan-shaped molybdenum sheet compositions, has and send out on emitter end cap 1
The fan-shaped protrusion of 2 homalographic of emitter-base bandgap grading molybdenum sheet, to avoid being damaged caused by the shearing force of generation is to emitter end cap 1 under pressure
Wound；And pass through the emitter molybdenum sheet 2 of fan-shaped pylone fixed sectors structure and emitter end cap 1 on emitter molybdenum sheet locating rack 4,
To prevent phase connection from dividing relative displacement.
Also, if a certain sector is judged as failure sector after testing, by replacing some failure on emitter molybdenum sheet 2
The fan-shaped conductive molybdenum sheet in area realizes the isolation of failure sector for insulating trip.
As shown in Figure 3 and Figure 4,12 top surface of igbt chip is provided with emitter metal layer and gate metal layer, emitter gold
Category 11 and gate metal 9 use special type of attachment.Wherein, as shown in fig. 6, emitter metal 11 successively with flexible conductive metal
Thin slice 10, emitter molybdenum sheet 2 are connected with emitter end cap 1, and pass through the fan-shaped pylone of emitter molybdenum sheet locating rack 4 by each portion
Divide and fix, the flexible conductive sheet metal 10 between emitter metal 11 and emitter molybdenum sheet 2 plays compensator or trimmer pressure and conductive work
With.
As shown in fig. 7, gate metal 9 is connected with grid spring needle assemblies 3, grid spring needle assemblies 3 pass through emitter molybdenum
Piece locating rack 4 and ceramic cartridge 6, using Seal Design, grid spring needle assemblies 3 and grid gold when lead passes through ceramic cartridge 6
Belong to 9 and interconnection is contacted by direct pressure；It, can also be by core when 12 a certain sector of igbt chip is judged as failure sector after testing
Piece areal gate metal 9 and the cut-out of 11 specific junction of emitter metal.
As shown in figure 8,12 bottom surface of igbt chip is provided with collector electrode metal layer, collector electrode metal 15 is positioned with collector band
Hole molybdenum sheet 13 is contacted by direct pressure and interconnected, and a positioning hole is arranged at 13 bottom of collector band location hole molybdenum sheet, by positioning pin 7 with
Collector end cap 14 is connected, and prevents collector molybdenum sheet relative displacement.
The contact interconnection of the direct pressures such as igbt chip, molybdenum sheet, metal end and grid spring needle inside encapsulating structure,
This requires each component thickness of device inside is uniform, each contact surface is smooth, stringent control contact surface evenness, roughness with it is parallel
Degree, each contact surface comes into full contact with and uniform stressed during crimping encapsulation.
The extreme lid 1 of top-emission, bottom collector end cap 14 are both provided with installation through-hole, and the installation through-hole of the two is vertically right
Standard, convenient for the fixation of crimping encapsulation IGBT module and the installation of radiator.The extreme lid 1 of top-emission and bottom collector end cap
14 have enough thickness and mechanical strength, meet top metal plate upper surface and bottom metal lower surface as module machinery
The demand of mounting surface.Two mechanical erection faces can pass through collector end cap 14 and hair again as the thermally-conductive interface of module simultaneously
Emitter-base bandgap grading end cap 1 carries out two-side radiation.
Device inside is designed using symmetrical structure, and entire module by cold welding crimp hermetically sealed, and fills
The inert gas shieldings shell internal components such as nitrogen ensure internal electric insulation performance.
A kind of manufacturing method of circle large scale igbt chip crimping encapsulating structure, using above-mentioned crimping encapsulating structure,
Production method is：
The first step makes each section parts needed for encapsulation；
Second step is stacked and is encapsulated by structure feature requirement：Entirely module by cold welding crimp hermetically sealed, and
Fill nitrogen inert gas；
Third walks, and forms final products and encapsulates.
Preferably, if a certain sector is judged as failure sector after testing, by replacing some event on emitter molybdenum sheet 2
Hinder the isolation that the fan-shaped conductive molybdenum sheet in area realizes failure sector for insulating trip.
Preferably, it in the isolation for realizing failure sector, needs the areal gate metal 9 and emitter of igbt chip 12
The junction cut-out of metal 11.
Using this crimping encapsulating structure, failure sector isolation method is simple, only needs to change corresponding failure area conduction molybdenum sheet and is
Insulating trip, and the specific junction of chip surface gate metal is cut off；Device by collector end cap 14 and emitter end cap 1 into
Row two-side radiation；Without metallic bond zygonema and its weld interface, traditional devices bonding point and the bottle of welding layer fatigue failure are eliminated
Neck is stronger to the resistance of thermal mechanical fatigue；Device inside is designed using symmetrical structure, reduces internal each fanned partition stray electrical
Sense distribution makes stray inductance distribution reach unanimity, reduces the parasitic parameter of module, improve the electric property of device.
It should be noted that herein, term " comprising ", "comprising" or its any other variant are intended to non-row
His property includes, so that process, method, article or equipment including a series of elements not only include those elements, and
And it further includes other elements that are not explicitly listed or further includes intrinsic for this process, method, article or equipment institute
Element.
In the description of the present invention, it is also necessary to which explanation is unless specifically defined or limited otherwise, term " installation ",
" connected ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected or integrally connect
It connects；Can be mechanical connection or electrical connection；It can be directly connected, can also be indirectly connected by intermediary.It is right
For those of ordinary skill in the art, visual concrete condition understands the concrete meaning of above-mentioned term in the present invention.
Specific case used herein is expounded the principle of the present invention and embodiment, the explanation of above example
It is merely used to help understand the method and its core concept of the present invention.The above is only the preferred embodiment of the present invention, should
When pointing out, due to the finiteness of literal expression, and objectively there are unlimited concrete structure, for the common skill of the art
For art personnel, without departing from the principle of the present invention, several improvement, retouching or variation can also be made, can also incited somebody to action
Above-mentioned technical characteristic is combined in the right way；These improve retouching, variation or combination or the not improved structure by invention
Think and technical solution directly applies to other occasions, be regarded as protection scope of the present invention.
Claims (10)
1. a kind of circle large scale igbt chip crimping encapsulating structure, which is characterized in that encapsulating structure is included from top to bottom successively
The emitter end cap of setting（1）, emitter molybdenum sheet（2）, grid spring needle assemblies（3）, gate metal（9）, emitter molybdenum sheet determines
Position frame（4）, flexible conductive sheet metal（10）, emitter metal（11）, igbt chip（12）, collector electrode metal（14）, current collection
Pole band location hole molybdenum sheet（13）, positioning pin（7）, collector end cap（14）, cushion rubber（5）, metal shirt rim（8）And ceramic cartridge（6）；
Wherein igbt chip（12）Top surface be provided with emitter metal layer and gate metal layer, bottom surface is provided with collector electrode metal layer；
Igbt chip（12）The emitter metal on top surface surface layer（11）With gate metal（9）The side being connected using special multiple spot with face
Formula connects, and emitter metal（11）Successively with flexible conductive sheet metal（10）, emitter molybdenum sheet（2）With emitter end cap
（1）It is connected, passes through emitter molybdenum sheet locating rack（4）On fan-shaped pylone fix；Gate metal（9）With grid spring needle assemblies
（3）It is connected, grid spring needle assemblies（3）Across emitter molybdenum sheet locating rack（4）And ceramic cartridge（6）；Igbt chip（12）Bottom
The collector electrode metal on face surface layer（15）Successively with collector with location hole molybdenum sheet（13）With collector terminal lid（14）It is connected；IGBT
Chip（12）, emitter molybdenum sheet（2）, collector band location hole molybdenum sheet（13）, grid spring needle assemblies（3）And connection thereon
The contact interconnection of the direct pressures such as metal end；Device inside is designed using symmetrical structure, and entire module by cold welding into
Row crimping is hermetically sealed, and fills inert gas.
2. a kind of round large scale igbt chip crimping encapsulating structure according to claim 1, which is characterized in that described
Igbt chip（12）For round large size chip, and fanned partition is carved on surface.
A kind of 3. round large scale igbt chip crimping encapsulating structure according to claim 1, which is characterized in that the knot
The inert gas filled inside structure is nitrogen.
A kind of 4. round large scale igbt chip crimping encapsulating structure according to claim 1, which is characterized in that the spy
The mode that different multiple spot is connected with face is：Connect igbt chip（12）The emitter metal on top surface surface layer（11）It is uniformly distributed more
The sector structure of a partition and with the gate metal of multiple strip structures（9）It is connected in a manner that multiple spot is connected with face.
A kind of 5. round large scale igbt chip crimping encapsulating structure according to claim 1, which is characterized in that the hair
Emitter-base bandgap grading molybdenum sheet（2）For multiple independent fan-shaped molybdenum sheet compositions, emitter molybdenum sheet（2）With emitter end cap（1）On fan-shaped protrusion
Homalographic contacts.
A kind of 6. round large scale igbt chip crimping encapsulating structure according to claim 1, which is characterized in that emitter
Molybdenum sheet locating rack（4）On be reserved with for fixed placement emitter molybdenum sheet（2）With flexible conductive sheet metal（10）Sector lead to
Hole, and by fan-shaped pylone by emitter end cap（1）It is fixed.
7. a kind of round large scale igbt chip crimping encapsulating structure according to claim 1-6 any one, feature
It is, the flexible conductive sheet metal（10）For multiple independent fan-shaped flexible conductive sheet metals, and with emitter molybdenum sheet
It is contacted with emitter metal homalographic.
8. a kind of manufacturing method of circle large scale igbt chip crimping encapsulating structure, which is characterized in that using claim 1-6
The structure, production method are：
The first step makes each section parts needed for encapsulation；
Second step is stacked and is encapsulated by structure feature requirement：Entirely module by cold welding crimp hermetically sealed, and
Fill nitrogen inert gas；
Third walks, and forms final products and encapsulates.
9. a kind of manufacturing method of round large scale igbt chip crimping encapsulating structure according to claim 8, feature
It is, if a certain sector is judged as failure sector after testing, by replacing emitter molybdenum sheet（2）Some upper faulty section is fan-shaped
Conductive molybdenum sheet realizes the isolation of failure sector for insulating trip.
10. a kind of manufacturing method of round large scale igbt chip crimping encapsulating structure according to claim 8, feature
It is, in the isolation for realizing failure sector, needs igbt chip（12）Areal gate metal（9）With emitter metal
（11）Junction cut-out.
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| CN201711410556.8A CN108172617B (en) | 2017-12-23 | 2017-12-23 | Circular large-size IGBT chip crimping packaging structure and manufacturing method |
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| CN109671686A (en) * | 2019-01-29 | 2019-04-23 | 华北电力大学 | A kind of encapsulating structure of crimp type IGBT |
| CN110676176A (en) * | 2019-09-29 | 2020-01-10 | 全球能源互联网研究院有限公司 | Preparation process of power type semiconductor device packaging structure |
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| CN111128931B (en) * | 2018-10-30 | 2021-08-20 | 株洲中车时代半导体有限公司 | Rectifier tube shell |
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| CN112635404A (en) * | 2020-11-27 | 2021-04-09 | 株洲中车时代半导体有限公司 | Power sub-module, manufacturing method thereof and rotary die crimping type power module |
| CN112466868A (en) * | 2020-11-27 | 2021-03-09 | 北京新能源汽车技术创新中心有限公司 | Chip packaging structure and vehicle |
| CN112635404B (en) * | 2020-11-27 | 2024-04-19 | 株洲中车时代半导体有限公司 | Power sub-module, manufacturing method thereof and rotary die press-connection type power module |
| CN112597678A (en) * | 2020-12-15 | 2021-04-02 | 重庆大学 | Numerical simulation method for fretting wear failure evolution of crimping type IGBT device |
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| CN116093142A (en) * | 2023-04-07 | 2023-05-09 | 江苏岂丞智能科技有限公司 | Crimping type insulated gate bipolar transistor for flexible power transmission |
| CN116093142B (en) * | 2023-04-07 | 2023-08-29 | 国网湖北省电力有限公司荆州供电公司 | Crimping type insulated gate bipolar transistor for flexible power transmission |
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