CN108172617A - A kind of circle large scale igbt chip crimping encapsulating structure and manufacturing method - Google Patents

Abstract

The invention discloses a circular large-size IGBT chip crimping package structure and manufacturing method, which includes an emitter terminal cover, an emitter molybdenum sheet, a grid pogo pin assembly, a grid metal, and an emitter molybdenum arranged in sequence from top to bottom. Chip positioning frame, soft conductive metal sheet, emitter metal, IGBT chip, collector metal, collector molybdenum sheet with positioning hole, collector end cover, etc. With this crimping package structure, the fault sector isolation method is simple, only need to replace the sector-shaped conductive molybdenum sheet in the fault area as an insulating sheet, and cut off the specific connection of the gate metal on the chip surface; the device is isolated through the collector end cover and emitter end cover. Double-sided heat dissipation; no metal bonding wires and soldering interfaces, eliminating the bottleneck of fatigue failure of traditional device bonding points and soldering layers, and strong resistance to thermomechanical fatigue; the device adopts a symmetrical structure design inside the device to reduce stray noise in each internal sector Inductance, so that the distribution of stray inductance tends to be consistent, reduce the parasitic parameters of the module, and improve the electrical performance of the device.

Description

A circular large-size IGBT chip crimping package structure and manufacturing method

technical field

The invention relates to the field of semiconductor manufacturing, in particular to a circular large-size IGBT chip crimping package structure and a manufacturing method thereof.

Background technique

Insulated Gate Bipolar Transistor (IGBT) is a power electronic device that combines the advantages of metal-oxide-semiconductor field-effect transistors (MOSFET) and bipolar junction transistors. IGBT is known for its excellent performance It has been widely used and greatly improved the performance of power electronic devices and systems.

With the continuous expansion of the application field, the performance requirements for IGBT devices are getting higher and higher, and the existing technology has the following defects: 1. On the one hand, it is required to increase the power level of the device, and the traction of high-power electric locomotives, power transmission and transformation systems , new energy, national defense heavy industry and other fields as representatives, with the increase of system design capacity, traditional IGBT devices cannot meet the requirements or require multiple series-parallel applications, resulting in increased system costs and low reliability risks; 2. Another On the one hand, in view of the safety of system operation and the consideration of design and maintenance costs, there is an urgent need to improve the reliability and life of IGBT devices.

Due to design factors such as heat dissipation and stress and the limitations of welding and wire bonding process conditions, the power level of traditional solder potting IGBT devices cannot be greatly improved; at the same time, there are problems caused by thermal-mechanical stress such as lead off and solder layer degradation The failure bottleneck gradually fails to meet the needs of high power density and high reliability applications such as flexible direct current transmission and large offshore wind power generation. High-power crimp-type IGBT devices have no leads, no solder layers, and have the ability to dissipate heat on both sides. The power capacity and reliability of a single device have been greatly improved. At present, it has a tendency to replace traditional soldered potting IGBT devices and has become a high-end application field. One of the preferred devices.

At present, the commercialized crimp-type IGBT devices all adopt a multi-chip crimp-type packaging structure, which can be divided into two types of structures: boss type and spring type. The former is represented by Toshiba, IXYS and CRRC (acquired by Dynex), while the latter is represented by ABB.

Toshiba, IXYS, and CRRC (acquired by Dynex) all adopt convex multi-chip packaging structures, and the technical routes of the three are similar. Among them, the injection-enhanced insulated-gate transistor (IEGT) device produced by Toshiba provides a multi-chip press-fit package (PPI package), and all electrical connections inside the device are realized through pressure; Westcode, a British subsidiary of IXYS, uses multiple The chip press type IGBT module (SPT+Press-Pack) is developed on the basis of the press type thyristor and GTO, and multiple IGBT chips and FRD chips are connected in parallel in the IGBT module; CRRC (acquired by Dynex) The multi-chip crimp package structure used is basically the same as that of the above companies. Multiple IGBT chips are arranged in arrays on the same plane inside the module of this crimping type packaging structure, and multiple chip positioning devices are installed inside, and the IGBT chips are evenly crimped from both sides through the molybdenum plates on the upper and lower sides. Under the action of mechanical pressure, the collector and emitter of each IGBT chip are in contact with the corresponding copper electrodes of the crimp-type housing through the molybdenum plate. This crimp-type packaging structure has high requirements on the consistency of the pressure on the internal parallel-connected chips, and the magnitude of the pressure will directly affect the contact resistance and contact thermal resistance between the contact surfaces. In order to ensure the consistent pressure of all chips, it is necessary to strictly control the thickness of all assembly parts in each sub-module to be consistent, which increases the cost of module packaging and reduces the reliability of IGBT devices, which limits the traditional multi-chip crimping to a certain extent. Type packaged modules are used.

ABB uses spring-loaded packaging technology (StakPak technology). In the StakPak technology, each sub-module chip has its own independent contact probe and contact spring. The spring is used to balance the pressure of the device. Each chip has an independent spring contact to keep the pressure on the surface of each chip even. However, this package form is prone to spring fatigue, spring stress relaxation, wear and uneven pressure, etc. The spring relaxation will lead to poor contact between the gate probe and the gate surface, which will increase the contact resistance, increase the junction temperature, and accelerate device failure. IGBT device reliability.

Contents of the invention

The object of the present invention is to address the above problems, to provide a circular large-size IGBT chip crimping package structure and manufacturing method, to solve the existing IGBT crimping package structure needs to cut the chips on the entire wafer, and detect and select Afterwards, separate glue injection and then packaging, the operation is complicated, the assembly requirements are high, and the stray parameters are obviously affected, which is conducive to expanding the power level of a single device.

In order to achieve the above objectives, the technical solution adopted by the present invention is: a circular large-size IGBT chip crimping packaging structure, the packaging structure includes emitter terminal cover (1), emitter molybdenum sheet (2) arranged in sequence from top to bottom , grid pogo pin assembly (3), grid metal (9), emitter molybdenum sheet positioning frame (4), soft conductive metal sheet (10), emitter metal (11), IGBT chip (12), collector Metal (14), collector molybdenum sheet with positioning hole (13), positioning pin (7), collector end cap (14), rubber ring (5), metal skirt (8) and ceramic shell (6); The top surface of the IGBT chip (12) is provided with an emitter metal layer and a gate metal layer, and the bottom surface is provided with a collector metal layer; the emitter metal (11) and the gate metal (9) on the top surface of the IGBT chip (12) are ) is connected in a special multi-point-to-surface connection, and the emitter metal (11) is connected with the soft conductive metal sheet (10), the emitter molybdenum sheet (2) and the emitter terminal cover (1) in sequence, and the emitter The fan-shaped through hole on the molybdenum sheet positioning frame (4) is fixed; the grid metal (9) is connected to the grid pogo pin assembly (3), and the grid pogo pin assembly (3) passes through the emitter molybdenum sheet positioning frame (4) and the ceramic case (6); the collector metal (15) on the bottom surface of the IGBT chip (12) is sequentially connected to the molybdenum sheet with positioning holes for the collector (13) and the collector end cap (14); the IGBT chip (12) , the emitter molybdenum sheet (2), the collector molybdenum sheet with positioning holes (13), the grid pogo pin assembly (3) and the connected metal end caps on it are directly pressure-contacted and interconnected; the device adopts a symmetrical structure design inside, And the whole module is crimped and sealed by cold pressure welding, and filled with inert gas.

Further, the IGBT chip (12) is a circular large-size chip with sector-shaped partitions engraved on the surface.

Further, the inert gas filled inside the structure is nitrogen.

Further, the special way of connecting multiple points to surfaces is as follows: the emitter metal (11) connected to the surface layer of the top surface of the IGBT chip (12) is a uniformly distributed fan-shaped structure with multiple partitions and is connected with multiple strip structures. The gate metal (9) is connected in a manner of connecting multiple points to surfaces.

Further, the emitter molybdenum sheet (2) is composed of a plurality of independent fan-shaped molybdenum sheets, and the emitter molybdenum sheet (2) is in equal-area contact with the fan-shaped protrusion on the emitter terminal cover (1).

Further, fan-shaped through holes for fixedly placing the emitter molybdenum sheet (2) and the soft conductive metal sheet (10) are reserved on the emitter molybdenum sheet positioning frame (4), and the emitter terminal cover (1 )fixed.

Further, the flexible conductive metal sheet (10) is a plurality of independent fan-shaped flexible conductive metal sheets, and is in contact with the emitter molybdenum sheet and the emitter metal in an equal area.

The manufacturing method adopted in the present invention: a manufacturing method of a circular large-size IGBT chip crimping packaging structure, adopting the above-mentioned crimping packaging structure, and its manufacturing method is:

The first step is to make all parts required for packaging;

The second step is to stack and package according to the structural characteristics: the whole module is crimped and sealed by cold pressure welding, and filled with nitrogen inert gas;

The third step is to form the final product and package it.

Further, if a certain sector is determined to be a faulty sector after detection, the isolation of the faulty sector is realized by replacing a sector-shaped conductive molybdenum sheet in a faulty area on the emitter molybdenum sheet (2) with an insulating sheet.

Further, when realizing the isolation of the faulty sector, it is necessary to cut off the junction between the gate metal (9) and the emitter metal (11) on the surface of the IGBT chip (12).

Beneficial effects of the present invention: the present invention provides a circular large-size IGBT chip crimping package structure and manufacturing method, which solves the need for the existing IGBT crimping package structure to divide the chips on the entire wafer and detect and select them Afterwards, separate glue injection and then packaging, the operation is complicated, the assembly requirements are high, and the stray parameters are obviously affected, which is conducive to expanding the power level of a single device.

1. Adopting the circular large-size IGBT chip crimping package structure of the present invention, the fault sector isolation method is simple to operate, only need to replace the conductive molybdenum sheet in the corresponding fault area as an insulating sheet, and specify the gate metal and emitter metal on the surface of the IGBT chip The connection is severed.

2. The interior of the high-power crimping packaging device adopts a symmetrical structure design. Compared with other crimping packaging devices, this design structure reduces the distribution of stray inductance in each internal sector, makes the stray inductance distribution tend to be consistent, and reduces the parasitic of the module parameter.

3. The collector metal and emitter metal of the high-power crimping packaged device are connected to the corresponding metal end cap through the corresponding molybdenum sheet; it realizes both electrical connection and double-sided heat dissipation, which is far superior to conventional welding potting devices heat transfer capacity.

4. Since the components inside the device are directly connected by pressure, there is no wire bonding and welding layer, which eliminates the bottleneck of traditional device bonding points and welding layers due to fatigue failure, and has strong resistance to thermomechanical fatigue, greatly improving the module in Long-term reliability in harsh application environments.

Description of drawings

Fig. 1 is a half-sectional top view of a circular large-size IGBT chip crimping package structure according to the present invention.

Fig. 2 is a half-section bottom view of a circular large-size IGBT chip crimp package structure according to the present invention.

Fig. 3 is a panoramic view of the connection form of the emitter metal and the gate metal in the present invention.

Fig. 4 is a partial diagram of the connection form of the emitter metal and the gate metal in the present invention.

Fig. 5 is a schematic diagram of the connection between the emitter terminal cover and the emitter molybdenum sheet according to the present invention.

Fig. 6 is a schematic diagram of the connection between the emitter terminal cover, the emitter molybdenum sheet, the emitter molybdenum sheet positioning frame, the soft conductive metal and the IGBT chip of the present invention.

Fig. 7 is a schematic diagram of the connection of the gate pogo pin assembly, the gate metal, the IGBT chip and the ceramic case of the present invention.

Fig. 8 is a schematic diagram of the connection of the IGBT chip, the collector molybdenum sheet and the collector end cap of the present invention.

The text marked in the figure is expressed as: 1. Emitter terminal cover; 2. Emitter molybdenum sheet; 3. Grid spring pin assembly; 4. Emitter molybdenum sheet positioning frame; 5. Apron; 6. Ceramic shell; 7. Positioning pin; 8. Metal skirt; 9. Gate metal; 10. Soft conductive metal sheet; 11. Emitter metal; 12. IGBT chip; 13. Molybdenum sheet with positioning hole for collector; 14. Collector terminal Cover; 15, collector metal.

Detailed ways

In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be described in detail below in conjunction with the accompanying drawings. The description in this part is only exemplary and explanatory, and should not have any limiting effect on the protection scope of the present invention. .

As shown in Figure 1 and Figure 2, a circular large-size IGBT chip crimping package structure provided by this embodiment includes an emitter terminal cover 1, an emitter molybdenum sheet 2, and a gate spring arranged in sequence from top to bottom. Needle assembly 3, grid metal 9, emitter molybdenum sheet positioning frame 4, soft conductive metal sheet 10, emitter metal 11, IGBT chip 12, collector metal 14, collector molybdenum sheet with positioning hole 13, positioning pin 7, Collector end cover 14, rubber ring 5, metal skirt 8 and ceramic shell 6.

The top surface of the IGBT chip 12 is provided with an emitter metal layer and a gate metal layer, and the bottom surface is provided with a collector metal layer; the emitter metal 11 and the gate metal 9 on the top surface of the IGBT chip 12 adopt a special multi-point and surface phase The connection mode is connected, and the emitter metal 11 is sequentially connected with the soft conductive metal sheet 10, the emitter molybdenum sheet 2 and the emitter terminal cover 1, and is fixed through the fan-shaped through hole on the emitter molybdenum sheet positioning frame 4; the grid metal 9 It is connected with the grid pogo pin assembly 3, and the grid pogo pin assembly 3 passes through the emitter molybdenum sheet positioning frame 4 and the ceramic shell 6; the collector metal 15 on the bottom surface of the IGBT chip 12 is sequentially connected with the collector molybdenum sheet 13 with positioning holes It is connected with the collector end cap 14; the IGBT chip 12, the emitter molybdenum sheet 2, the collector molybdenum sheet with positioning holes 13, the grid pogo pin assembly 3 and the metal end cap connected thereon are directly pressure-contacted and interconnected; the device The interior adopts a symmetrical structure design, and the entire module is crimped and sealed by cold pressure welding, and filled with inert gas.

Preferably, the IGBT chip 12 is a circular large-size chip with sector-shaped partitions engraved on the surface.

Preferably, the inert gas filled inside the structure is nitrogen.

Preferably, the special way of connecting multiple points to surfaces is as follows: the emitter metal 11 connected to the surface layer of the top surface of the IGBT chip 12 is uniformly distributed in a plurality of partitioned fan-shaped structures and is connected with a plurality of strip-shaped gate metals 9 Use the way of multi-point and surface connection.

Preferably, the emitter molybdenum sheet positioning frame 4 is reserved with fan-shaped through holes for fixedly placing the emitter molybdenum sheet 2 and the soft conductive metal sheet 10, and the emitter terminal cover 1 is fixed through the fan-shaped through holes.

Preferably, the flexible conductive metal sheet 10 is a plurality of independent fan-shaped flexible conductive metal sheets, and is in equal area contact with the emitter fan-shaped molybdenum sheet 2 and the emitter metal 11 . And the flexible conductive metal sheet is preferably silver foil.

As shown in Figure 5, the emitter fan-shaped molybdenum sheet 2 is composed of a plurality of independent fan-shaped molybdenum sheets, and the emitter terminal cover 1 has a fan-shaped protrusion with an area equal to that of the emitter molybdenum sheet 2, so as to avoid the shear caused by the pressure. The shear force causes damage to the emitter terminal cover 1; and fix the fan-shaped emitter molybdenum sheet 2 and the emitter terminal cover 1 through the fan-shaped through hole on the emitter molybdenum sheet positioning frame 4 to prevent the relative displacement of the connected parts.

Moreover, if a certain sector is determined to be a faulty sector after detection, the isolation of the faulty sector is realized by replacing a sector-shaped conductive molybdenum sheet in a faulty area on the emitter molybdenum sheet 2 with an insulating sheet.

As shown in FIG. 3 and FIG. 4 , the top surface of the IGBT chip 12 is provided with an emitter metal layer and a gate metal layer, and the emitter metal 11 and the gate metal 9 adopt a special connection form. Among them, as shown in Figure 6, the emitter metal 11 is sequentially connected with the soft conductive metal sheet 10, the emitter molybdenum sheet 2 and the emitter terminal cover 1, and each part is fixed through the fan-shaped through hole of the emitter molybdenum sheet positioning frame 4 , The soft conductive metal sheet 10 between the emitter metal 11 and the emitter molybdenum sheet 2 plays the role of buffering pressure and conducting electricity.

As shown in Figure 7, the grid metal 9 is connected to the grid pogo pin assembly 3, the grid pogo pin assembly 3 passes through the emitter molybdenum sheet positioning frame 4 and the ceramic shell 6, and the lead wire is sealed when passing through the ceramic shell 6. design, the gate pogo pin assembly 3 and the gate metal 9 are interconnected through direct pressure contact; when a certain sector of the IGBT chip 12 is detected as a faulty sector, the gate metal 9 and the emitter metal 11 on the surface of the chip can also be connected Cut off at a specific connection.

As shown in Figure 8, the bottom surface of the IGBT chip 12 is provided with a collector metal layer, the collector metal 15 and the collector molybdenum sheet 13 with positioning holes are interconnected through direct pressure contact, and there is a positioning hole at the bottom of the collector molybdenum sheet 13 with positioning holes. The positioning pin 7 is connected with the collector end cover 14 to prevent relative displacement of the molybdenum sheet of the collector.

The IGBT chips, molybdenum sheets, metal end caps, and gate pogo pins inside the package structure are directly pressure-contacted and interconnected, which requires that the thickness of each component inside the device is uniform, and the contact surfaces are smooth, and the flatness, roughness and parallelism of the contact surfaces are strictly controlled. When crimping the package, each contact surface is fully contacted and evenly stressed.

Both the top emitter terminal cover 1 and the bottom collector terminal cover 14 are provided with installation through holes, and the installation through holes of the two are vertically aligned, which is convenient for fixing the crimp-packaged IGBT module and installing the heat sink. The top emitter end cap 1 and the bottom collector end cap 14 have sufficient thickness and mechanical strength to meet the requirements of the upper surface of the top metal plate and the lower surface of the bottom metal plate as the mechanical mounting surface of the module. At the same time, the two mechanical installation surfaces serve as the heat conduction interface of the module, which can conduct double-sided heat dissipation through the collector end cover 14 and the emitter end cover 1 .

The interior of the device adopts a symmetrical structure design, and the whole module is crimped and sealed by cold pressure welding, and is filled with inert gas such as nitrogen to protect the internal device of the tube shell to ensure the internal electrical insulation performance.

A method for manufacturing a circular large-size IGBT chip crimping package structure, using the above-mentioned crimping package structure, the manufacturing method is:

The first step is to make all parts required for packaging;

The second step is to stack and package according to the structural characteristics: the whole module is crimped and sealed by cold pressure welding, and filled with nitrogen inert gas;

The third step is to form the final product and package it.

Preferably, if a certain sector is determined to be a faulty sector after detection, the isolation of the faulty sector is realized by replacing a sector-shaped conductive molybdenum sheet in a faulty area on the emitter molybdenum sheet 2 with an insulating sheet.

Preferably, when realizing the isolation of the faulty sector, it is necessary to cut off the junction between the gate metal 9 and the emitter metal 11 on the surface of the IGBT chip 12 .

With this crimping package structure, the faulty sector isolation method is simple, just replace the conductive molybdenum sheet in the corresponding faulty area with an insulating sheet, and cut off the specific connection of the gate metal on the chip surface; the device passes through the collector end cover 14 and the emitter end cover 1. Double-sided heat dissipation; no metal bonding wire and its welding interface, eliminating the bottleneck of fatigue failure of traditional device bonding points and soldering layers, and strong resistance to thermomechanical fatigue; the internal design of the device adopts a symmetrical structure to reduce internal components. The distribution of stray inductance in fan-shaped partitions makes the distribution of stray inductance tend to be consistent, reduces the parasitic parameters of the module, and improves the electrical performance of the device.

It should be noted that, in this document, the terms "comprising", "comprising" or any other variation thereof are intended to cover a non-exclusive inclusion such that a process, method, article or apparatus comprising a set of elements includes not only those elements, It also includes other elements not expressly listed, or elements inherent in the process, method, article, or apparatus.

In the description of the present invention, it should also be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be interpreted in a broad sense, for example, it can be a fixed connection or a flexible connection. Detachable connection, or integral connection; it can be mechanical connection or electrical connection; it can be direct connection or indirect connection through an intermediary. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

In this paper, specific examples are used to illustrate the principle and implementation of the present invention. The description of the above examples is only used to help understand the method and core idea of the present invention. The above is only a preferred embodiment of the present invention. It should be pointed out that due to the limitation of literal expression, there are objectively unlimited specific structures. Under these circumstances, several improvements, modifications or changes can also be made, and the above-mentioned technical features can also be combined in an appropriate manner; these improvements, modifications, or combinations, or the idea and technical solution of the invention can be directly applied to other occasions without improvement should be regarded as the protection scope of the present invention.

Claims (10)

1. a kind of circle large scale igbt chip crimping encapsulating structure, which is characterized in that encapsulating structure is included from top to bottom successively The emitter end cap of setting（1）, emitter molybdenum sheet（2）, grid spring needle assemblies（3）, gate metal（9）, emitter molybdenum sheet determines Position frame（4）, flexible conductive sheet metal（10）, emitter metal（11）, igbt chip（12）, collector electrode metal（14）, current collection Pole band location hole molybdenum sheet（13）, positioning pin（7）, collector end cap（14）, cushion rubber（5）, metal shirt rim（8）And ceramic cartridge（6）； Wherein igbt chip（12）Top surface be provided with emitter metal layer and gate metal layer, bottom surface is provided with collector electrode metal layer； Igbt chip（12）The emitter metal on top surface surface layer（11）With gate metal（9）The side being connected using special multiple spot with face Formula connects, and emitter metal（11）Successively with flexible conductive sheet metal（10）, emitter molybdenum sheet（2）With emitter end cap （1）It is connected, passes through emitter molybdenum sheet locating rack（4）On fan-shaped pylone fix；Gate metal（9）With grid spring needle assemblies （3）It is connected, grid spring needle assemblies（3）Across emitter molybdenum sheet locating rack（4）And ceramic cartridge（6）；Igbt chip（12）Bottom The collector electrode metal on face surface layer（15）Successively with collector with location hole molybdenum sheet（13）With collector terminal lid（14）It is connected；IGBT Chip（12）, emitter molybdenum sheet（2）, collector band location hole molybdenum sheet（13）, grid spring needle assemblies（3）And connection thereon The contact interconnection of the direct pressures such as metal end；Device inside is designed using symmetrical structure, and entire module by cold welding into Row crimping is hermetically sealed, and fills inert gas.

2. a kind of round large scale igbt chip crimping encapsulating structure according to claim 1, which is characterized in that described Igbt chip（12）For round large size chip, and fanned partition is carved on surface.

A kind of 3. round large scale igbt chip crimping encapsulating structure according to claim 1, which is characterized in that the knot The inert gas filled inside structure is nitrogen.

A kind of 4. round large scale igbt chip crimping encapsulating structure according to claim 1, which is characterized in that the spy The mode that different multiple spot is connected with face is：Connect igbt chip（12）The emitter metal on top surface surface layer（11）It is uniformly distributed more The sector structure of a partition and with the gate metal of multiple strip structures（9）It is connected in a manner that multiple spot is connected with face.

A kind of 5. round large scale igbt chip crimping encapsulating structure according to claim 1, which is characterized in that the hair Emitter-base bandgap grading molybdenum sheet（2）For multiple independent fan-shaped molybdenum sheet compositions, emitter molybdenum sheet（2）With emitter end cap（1）On fan-shaped protrusion Homalographic contacts.

A kind of 6. round large scale igbt chip crimping encapsulating structure according to claim 1, which is characterized in that emitter Molybdenum sheet locating rack（4）On be reserved with for fixed placement emitter molybdenum sheet（2）With flexible conductive sheet metal（10）Sector lead to Hole, and by fan-shaped pylone by emitter end cap（1）It is fixed.

7. a kind of round large scale igbt chip crimping encapsulating structure according to claim 1-6 any one, feature It is, the flexible conductive sheet metal（10）For multiple independent fan-shaped flexible conductive sheet metals, and with emitter molybdenum sheet It is contacted with emitter metal homalographic.

8. a kind of manufacturing method of circle large scale igbt chip crimping encapsulating structure, which is characterized in that using claim 1-6 The structure, production method are：

The first step makes each section parts needed for encapsulation；

Second step is stacked and is encapsulated by structure feature requirement：Entirely module by cold welding crimp hermetically sealed, and Fill nitrogen inert gas；

Third walks, and forms final products and encapsulates.

9. a kind of manufacturing method of round large scale igbt chip crimping encapsulating structure according to claim 8, feature It is, if a certain sector is judged as failure sector after testing, by replacing emitter molybdenum sheet（2）Some upper faulty section is fan-shaped Conductive molybdenum sheet realizes the isolation of failure sector for insulating trip.

10. a kind of manufacturing method of round large scale igbt chip crimping encapsulating structure according to claim 8, feature It is, in the isolation for realizing failure sector, needs igbt chip（12）Areal gate metal（9）With emitter metal （11）Junction cut-out.