CN105870115A - Multi-chip 3D packaging structure - Google Patents

Multi-chip 3D packaging structure Download PDF

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Publication number
CN105870115A
CN105870115A CN201610204089.2A CN201610204089A CN105870115A CN 105870115 A CN105870115 A CN 105870115A CN 201610204089 A CN201610204089 A CN 201610204089A CN 105870115 A CN105870115 A CN 105870115A
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chip
base island
frame base
power
packaging structure
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Chinese (zh)
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刘桂芝
马丙乾
付强
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WUXI LINLI TECHNOLOGY Co Ltd
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WUXI LINLI TECHNOLOGY Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/877—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本发明公开了一种多芯片3D封装结构,包括塑封体(40),该塑封体(40)内封装有框架基岛(41),该框架基岛(41)的正面至少贴装有一个控制芯片(43),且所述控制芯片(43)与框架基岛(41)之间设置有绝缘胶(47);所述框架基岛(41)的背面至少贴装有一个功率芯片(42),且所述功率芯片(42)与框架基岛(41)之间均匀设置有多个铜柱(46);所述功率芯片(42)的另一面通过焊料与散热片贴装在一起;其中,所述控制芯片(42)上的功能脚位与所述框架基岛(41)上的框架脚位相连接。本发明将使用Flip‑chip工艺贴装功率芯片,避免使用焊线连接,有效降低了大电流回路的内阻,提高了电气效率。

The invention discloses a multi-chip 3D packaging structure, which comprises a plastic package (40), a frame base island (41) is packaged in the plastic package (40), and at least one control panel is mounted on the front side of the frame base island (41). chip (43), and an insulating glue (47) is provided between the control chip (43) and the frame base island (41); at least one power chip (42) is mounted on the back of the frame base island (41) , and a plurality of copper pillars (46) are evenly arranged between the power chip (42) and the frame base island (41); the other side of the power chip (42) is mounted together with a heat sink by solder; wherein , the functional pins on the control chip (42) are connected to the frame pins on the frame base island (41). The present invention uses Flip-chip technology to mount power chips, avoids the use of welding wires for connection, effectively reduces the internal resistance of large current loops, and improves electrical efficiency.

Description

一种多芯片3D封装结构A multi-chip 3D packaging structure

技术领域technical field

本发明涉及一种多芯片3D封装结构。The invention relates to a multi-chip 3D packaging structure.

背景技术Background technique

目前,常见的多芯片封装主要又下面几种:At present, the common multi-chip packages are mainly as follows:

1、多芯片贴装在同一个基岛上,使用导线将芯片与引脚相连接。如图1a至图1d所示:该封装结构是将多个芯片使用装片胶贴装在同一基岛上,通常两个芯片分别为功率芯片12和控制芯片13。控制芯片13衬底为低电位,功率芯片12衬底为高电位,两者衬底电位存在电压差。功率芯片12衬底上的高电位一般都需要使用导电胶与框架基岛粘连,通过基岛引出高电位。此时控制芯片13就需要采用绝缘胶与基岛进行电气隔离。由于绝缘胶的厚度难以控制,并且框架表面镀层容易出现尖凸导电颗粒,从而使得控制芯片13衬底与框架基岛出现漏电的现象,影响产品性能和可靠性。另外,功率芯片12表面使用导线与引脚相连接,大电流回路中存在焊线连接,内阻较大,影响电气效率。1. Mount multiple chips on the same base island, and use wires to connect the chips to the pins. As shown in FIG. 1a to FIG. 1d : in this packaging structure, multiple chips are mounted on the same base island with die-mount adhesive, and usually the two chips are a power chip 12 and a control chip 13 . The substrate of the control chip 13 is at a low potential, and the substrate of the power chip 12 is at a high potential, and there is a voltage difference between the two substrates. The high potential on the substrate of the power chip 12 generally needs to be adhered to the base island of the frame with conductive glue, and the high potential is drawn out through the base island. In this case, the control chip 13 needs to be electrically isolated from the base island with insulating glue. Since the thickness of the insulating glue is difficult to control, and the coating on the surface of the frame is prone to have pointed and convex conductive particles, the substrate of the control chip 13 and the base island of the frame will leak electricity, affecting product performance and reliability. In addition, the surface of the power chip 12 is connected to the pins by wires, and there is a wire connection in the large current circuit, and the internal resistance is relatively large, which affects the electrical efficiency.

其主要缺点是:高电位区域与低电位区域之间使用绝缘胶隔离,存在漏电风险;大电流回路中存在焊线连接,内阻较大。Its main disadvantages are: high-potential area and low-potential area are separated by insulating glue, and there is a risk of leakage; there is a welding wire connection in the high-current circuit, and the internal resistance is relatively large.

2、多个芯片进行堆叠封装,使用导线将芯片与引脚相连接。如图2a至2c所示:2. Multiple chips are stacked and packaged, and wires are used to connect the chips to the pins. As shown in Figures 2a to 2c:

该封装结构是多芯片进行堆叠装片,功率芯片22使用装片胶贴装在框架基岛21上,再使用绝缘胶将控制芯片23贴装在功率芯片22上方,再通过焊线将两颗芯片进行电气连接,形成堆叠装片的结构。这种封装结构必须要求功率芯片22面积足够大,能够满足贴装控制芯片23大小的要求,并且要求这些面积上不能够进行焊线。由于功率芯片22使用焊线连接,存在较大的焊线内阻,使得大电流回路中存在焊线连接,内阻较大,影响电气效率。The packaging structure is multi-chip stacking. The power chip 22 is mounted on the frame base island 21 with a mounting glue, and then the control chip 23 is mounted on the top of the power chip 22 with insulating glue. Chips are electrically connected to form a stacked chip structure. This packaging structure must require that the area of the power chip 22 is large enough to meet the size requirements of the mounting control chip 23, and it is required that no wire bonding can be performed on these areas. Since the power chip 22 is connected by a bonding wire, there is a large internal resistance of the bonding wire, so that there is a bonding wire connection in the large current circuit, and the internal resistance is relatively large, which affects the electrical efficiency.

其主要缺点是:大电流回路中存在焊线连接,内阻较大;功率芯片面积必须要比控制芯片面积大。Its main disadvantages are: there are wire connections in the large current loop, and the internal resistance is large; the area of the power chip must be larger than the area of the control chip.

3、多芯片多基岛封装,使用导线将芯片与引脚相连接。如图3a至3c所示:3. Multi-chip multi-base island package, using wires to connect chips to pins. As shown in Figures 3a to 3c:

这种封装结构是将功率芯片32和控制芯片33分别贴装在单独的框架基岛31上,再使用焊线将其连接。这种多基岛结构的芯片与框架通常是包封在塑封体内部的,从而使得芯片的热阻较高,散热效果不佳。其中的功率芯片32使用焊线连接,存在较大的焊线内阻,影响电气效率。In this packaging structure, the power chip 32 and the control chip 33 are respectively mounted on a separate frame base island 31, and then connected by bonding wires. The chip and frame of this multi-base island structure are usually encapsulated inside the plastic package, so that the thermal resistance of the chip is high and the heat dissipation effect is not good. Wherein the power chip 32 is connected by bonding wires, there is a relatively large internal resistance of the bonding wires, which affects electrical efficiency.

其主要缺点是:没有散热片,散热效果不佳;大电流回路中存在焊线连接,内阻较大。Its main disadvantages are: there is no heat sink, and the heat dissipation effect is not good; there are welding wire connections in the high-current circuit, and the internal resistance is large.

发明内容Contents of the invention

本发明目的是针对现有技术存在的缺陷提供一种多芯片3D封装结构。The purpose of the present invention is to provide a multi-chip 3D packaging structure for the defects existing in the prior art.

本发明为实现上述目的,采用的技术方案如下:一种多芯片3D封装结构,包括:塑封体40,该塑封体40内封装有框架基岛41,该框架基岛41的正面至少贴装有一个控制芯片43,且所述控制芯片43与框架基岛41之间设置有绝缘胶47;所述框架基岛41的背面至少贴装有一个功率芯片42,且所述功率芯片42与框架基岛41之间均匀设置有多个铜柱46;所述功率芯片42的另一面通过焊料44与散热片45贴装在一起。In order to achieve the above object, the present invention adopts the following technical scheme: a multi-chip 3D packaging structure, including: a plastic package 40, a frame base island 41 is packaged in the plastic package 40, and at least the front side of the frame base island 41 is mounted with A control chip 43, and an insulating glue 47 is arranged between the control chip 43 and the frame base island 41; at least one power chip 42 is mounted on the back side of the frame base island 41, and the power chip 42 and the frame base A plurality of copper pillars 46 are evenly arranged between the islands 41 ; the other side of the power chip 42 is mounted together with a heat sink 45 through solder 44 .

本发明的有益效果:Beneficial effects of the present invention:

1、本发明将使用Flip-chip工艺贴装功率芯片,避免使用焊线连接,有效降低了大电流回路的内阻,提高了电气效率。1. The present invention will use the Flip-chip process to mount the power chip, avoiding the use of wire bonding, effectively reducing the internal resistance of the large current loop, and improving the electrical efficiency.

2、本发明采用在框架基岛双面装片的技术,充分利用了基岛空间,有效节约框架基岛的面积,节约了材料成本。2. The present invention adopts the technology of loading films on both sides of the base island of the frame, fully utilizes the space of the base island, effectively saves the area of the base island of the frame, and saves material costs.

3、本发明采用在框架基岛正反面分布贴装控制芯片和功率芯片,有效的分离低电位芯片和高电位芯片,解决了高压绝缘的问题。3. The present invention distributes and mounts control chips and power chips on the front and back of the frame base island, effectively separates low-potential chips and high-potential chips, and solves the problem of high-voltage insulation.

4、本发明采用贴装散热片方式并将散热片裸露在塑封体表面,有效提高了封装体的散热性能。4. The present invention adopts the method of attaching the heat sink and exposes the heat sink on the surface of the plastic package, which effectively improves the heat dissipation performance of the package.

附图说明Description of drawings

图1a为传统多芯片同基岛封装结构平面示意图。Fig. 1a is a schematic plan view of a traditional multi-chip same-base island package structure.

图1b为传统多芯片同基岛封装结构截面示意图。Fig. 1b is a schematic cross-sectional view of a traditional multi-chip same-base island package structure.

图1c为传统多芯片同基岛封装结构的高低电位区域示意图。Figure 1c is a schematic diagram of the high and low potential regions of the traditional multi-chip same-base island package structure.

图1d为传统多芯片同基岛封装结构的大电流区域示意图。Figure 1d is a schematic diagram of the high current region of the traditional multi-chip same-base island package structure.

图2a为传统多芯片堆叠封装结构平面示意图。FIG. 2a is a schematic plan view of a traditional multi-chip stack package structure.

图2b为传统多芯片堆叠封装结构截面示意图。Fig. 2b is a schematic cross-sectional view of a conventional multi-chip stack package structure.

图2c为传统多芯片堆叠封装结构的大电流区域示意图。Fig. 2c is a schematic diagram of a large current region of a traditional multi-chip stacked package structure.

图3a为传统多芯片多基岛封装结构平面示意图。Fig. 3a is a schematic plan view of a traditional multi-chip multi-base island package structure.

图3b为传统多芯片多基岛封装结构截面示意图。Fig. 3b is a schematic cross-sectional view of a traditional multi-chip multi-base island package structure.

图3c为传统多芯片多基岛封装结构的大电流区域示意图。Fig. 3c is a schematic diagram of a large current region of a traditional multi-chip multi-base island package structure.

图4a为本发明3D封装结构平面示意图。Fig. 4a is a schematic plan view of the 3D packaging structure of the present invention.

图4b为本发明3D封装结构截面示意图。Fig. 4b is a schematic cross-sectional view of the 3D packaging structure of the present invention.

图4c为本发明3D封装结构的高低电位区域示意图。FIG. 4c is a schematic diagram of the high and low potential regions of the 3D packaging structure of the present invention.

图4d为本发明3D封装结构的大电流区域示意图。Fig. 4d is a schematic diagram of the high current region of the 3D packaging structure of the present invention.

图4e为本发明3D封装结构中散热片不裸露在塑封体表面时的封装示意图。FIG. 4e is a schematic diagram of the package when the heat sink is not exposed on the surface of the plastic package in the 3D package structure of the present invention.

图4f为本发明3D封装结构采用多个功率芯片封装示意图。FIG. 4f is a schematic diagram of packaging multiple power chips in the 3D packaging structure of the present invention.

图4g为本发明3D封装结构采用多个控制芯片封装示意图。FIG. 4g is a schematic diagram of packaging multiple control chips in the 3D packaging structure of the present invention.

具体实施方式detailed description

图4a、图4b所示,公开了一种多芯片3D封装结构,该结构实现的工艺将Bumping工艺、Flip-chip工艺、Clip工艺、装片胶工艺和焊线工艺相结合,将多芯片贴装在框架基岛的两侧,最终得到一种新的3D封装结构。As shown in Figure 4a and Figure 4b, a multi-chip 3D packaging structure is disclosed. Installed on both sides of the frame base island, a new 3D packaging structure is finally obtained.

上述工艺得到的3D封装结构,具体包括:塑封体40,该塑封体40内封装有框架基岛41,该框架基岛41的正面至少贴装有一个控制芯片43,且所述控制芯片43与框架基岛41之间设置有绝缘胶47;所述框架基岛41的背面至少贴装有一个功率芯片42,且所述功率芯片42与框架基岛41之间均匀设置有多个铜柱46;所述功率芯片42的另一面通过焊料44与散热片45贴装在一起。其中,为使得封装结构更加紧凑,所述控制芯片42上的功能脚位最好与所述框架基岛41上的框架脚位相连接。The 3D packaging structure obtained by the above process specifically includes: a plastic package 40, a frame base island 41 is packaged in the plastic package 40, at least one control chip 43 is mounted on the front side of the frame base island 41, and the control chip 43 and An insulating glue 47 is provided between the frame base islands 41; at least one power chip 42 is mounted on the back of the frame base island 41, and a plurality of copper pillars 46 are uniformly arranged between the power chip 42 and the frame base island 41 ; The other side of the power chip 42 is mounted together with the heat sink 45 through the solder 44 . Wherein, in order to make the packaging structure more compact, the functional pins on the control chip 42 are preferably connected to the frame pins on the frame base island 41 .

该工艺具体包括如下步骤:The process specifically includes the following steps:

a)使用Bumping工艺在功率芯片的正面生长多个铜柱;a) Using the Bumping process to grow multiple copper pillars on the front side of the power chip;

b)使用Flip-chip工艺将功率芯片装贴在框架基岛的背面;b) Use the Flip-chip process to mount the power chip on the back of the frame base island;

c)用Clip工艺将散热片贴装在功率芯片的背面;c) Mount the heat sink on the back of the power chip with the Clip process;

d)使用装片胶工艺将控制芯片装贴在框架基岛的正面;d) Mount and paste the control chip on the front of the frame base island by using the mounting glue process;

e)使用焊线将控制芯片上的功能脚位与框架脚位相连接;e) Use bonding wires to connect the functional pins on the control chip with the frame pins;

f)将焊好线的框架放到经过处理的模具中,使散热片紧贴模具进行塑封;f) Put the frame with welded wires into the processed mold, make the heat sink close to the mold for plastic sealing;

g)将塑封后的产品电镀后切筋成型。g) Electroplating the plastic-encapsulated product and then cutting the ribs to form it.

本发明在框架基岛两面分布贴装高电位芯片和低电位芯片,使高电位与低电位有效的隔离;如图4c所示。In the present invention, high-potential chips and low-potential chips are distributed and mounted on both sides of the frame base island, so that high-potential and low-potential chips are effectively isolated; as shown in FIG. 4c.

本发明将使用Flip-chip工艺贴装功率芯片,避免使用焊线连接,有效降低了大电流回路的内阻,提高了电气效率,如图4d所示。The present invention uses the Flip-chip process to mount the power chip, avoids the use of wire bonding, effectively reduces the internal resistance of the large current loop, and improves the electrical efficiency, as shown in Figure 4d.

另外,在本发明的上述封装工艺中,工序b)和工序c)可以互换顺序,同样可以实现该3D封装结构。互换后的封装工艺流程如下:In addition, in the above-mentioned packaging process of the present invention, the order of step b) and step c) can be interchanged, and the 3D packaging structure can also be realized. The packaging process after interchange is as follows:

a)使用Bumping工艺在功率芯片正面生长多个铜柱;a) Using the Bumping process to grow multiple copper pillars on the front of the power chip;

b)使用焊料工艺将功率芯片贴装在散热片上;b) Mount the power chip on the heat sink using a soldering process;

c)使用Flip-chip工艺将贴好散热片的功率芯片装贴在框架基岛的背面;c) Use the Flip-chip process to attach the power chip with the heat sink attached to the back of the frame base island;

d)使用装片胶工艺将控制芯片装贴在框架基岛的正面;d) Mount and paste the control chip on the front of the frame base island by using the mounting glue process;

e)使用焊线将控制芯片上的功能脚位与框架脚位相连接;e) Use bonding wires to connect the functional pins on the control chip with the frame pins;

f)将焊好线的框架放到经过处理的模具中使散热片紧贴模具进行塑封;f) Put the welded wire frame into the processed mold so that the heat sink is close to the mold for plastic sealing;

g)将塑封后的产品电镀后切筋成型。g) Electroplating the plastic-encapsulated product and then cutting the ribs to form it.

其中,当功率芯片没有散热要求时,工序f)中散热片可以不贴附在塑封体表面,如图4e所示。Wherein, when the power chip does not require heat dissipation, the heat sink may not be attached to the surface of the plastic package in step f), as shown in FIG. 4e.

其中,框架基岛两侧的控制芯片和功率芯片的数量不仅限于一个,可以多个,这时工艺流程中的相关工序可以多次重复进行,如图4f和图4g所示。另外,封装体类型可以依据需求而不同,如SOP、DFN、QFN等。Among them, the number of control chips and power chips on both sides of the frame base island is not limited to one, but can be multiple. At this time, the relevant processes in the process flow can be repeated many times, as shown in Figure 4f and Figure 4g. In addition, the package type can be different according to requirements, such as SOP, DFN, QFN, etc.

以上所述仅为本发明的较佳实施例,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the protection of the present invention. within range.

Claims (1)

1.一种多芯片3D封装结构,其特征在于,包括塑封体(40),该塑封体(40)内封装有框架基岛(41),该框架基岛(41)的正面至少贴装有一个控制芯片(43),且所述控制芯片(43)与框架基岛(41)之间设置有绝缘胶(47);所述框架基岛(41)的背面至少贴装有一个功率芯片(42),且所述功率芯片(42)与框架基岛(41)之间均匀设置有多个铜柱(46);所述功率芯片(42)的另一面通过焊料(44)与散热片(45)贴装在一起。1. A multi-chip 3D packaging structure, characterized in that it comprises a plastic package (40), the plastic package (40) is packaged with a frame base island (41), and the front of the frame base island (41) is at least mounted with A control chip (43), and an insulating glue (47) is arranged between the control chip (43) and the frame base island (41); at least one power chip ( 42), and a plurality of copper pillars (46) are evenly arranged between the power chip (42) and the frame base island (41); the other side of the power chip (42) is connected with the heat sink ( 45) Mount together.
CN201610204089.2A 2016-04-01 2016-04-01 Multi-chip 3D packaging structure Pending CN105870115A (en)

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CN107768354A (en) * 2017-11-16 2018-03-06 无锡麟力科技有限公司 Multi-chip integrated encapsulation structure and its method for packing
CN110364503A (en) * 2019-07-25 2019-10-22 珠海格力电器股份有限公司 A novel non-lead chip package structure and its manufacturing method
CN116230702A (en) * 2023-05-08 2023-06-06 广东气派科技有限公司 A packaging structure for a GaN chip

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CN106449517A (en) * 2016-11-22 2017-02-22 华蓥旗邦微电子有限公司 Stack type single base island SIP (System in Package) packaging process
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CN116230702B (en) * 2023-05-08 2024-04-26 广东气派科技有限公司 A packaging structure of GaN chip

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