CN208422903U - A kind of trench-type insulated gate bipolar transistor encapsulating structure - Google Patents
A kind of trench-type insulated gate bipolar transistor encapsulating structure Download PDFInfo
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- CN208422903U CN208422903U CN201821259335.5U CN201821259335U CN208422903U CN 208422903 U CN208422903 U CN 208422903U CN 201821259335 U CN201821259335 U CN 201821259335U CN 208422903 U CN208422903 U CN 208422903U
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- bipolar transistor
- insulated gate
- gate bipolar
- trench
- emitter
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
The utility model relates to transistor encapsulation technology fields, disclose a kind of trench-type insulated gate bipolar transistor encapsulating structure, the trench-type insulated gate bipolar transistor encapsulating structure includes: trench-type insulated gate bipolar transistor, and trench-type insulated gate bipolar transistor includes the emitter metal layer being electrically connected with emitter and the groove type grid positioned at emitter metal layer side；Lead frame, lead frame include the chip rest area and emitter exit for fixing groove type insulated gate bipolar transistor；Connect the first bonding wire of emitter metal layer and emitter pin, first bonding wire one end connect the first solder joint to form bar shaped with emitter metal layer away from the surface of groove type grid, the other end connect to form the second solder joint with emitter exit, and the extending direction for extending perpendicularly to groove type grid groove of the first solder joint.The encapsulating structure reduces the stress of single groove, improves bonding wire yield, improves the reliability of chip.
Description
Technical field
The utility model relates to transistor encapsulation technology field, in particular to a kind of trench-type insulated gate bipolar transistor
Encapsulating structure.
Background technique
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, abbreviation IGBT), is mainly answered
Alternating current generator, frequency converter for convertible frequency air-conditioner, Switching Power Supply, lighting circuit, the fields such as Traction Drive.Since IGBT is really
One circuit switch, used in several hundred to several kilovolts magnitudes of voltage, on the forceful electric power of electric current tens to several hundred peace magnitudes, therefore its reliability
Rank can require much higher than ordinary consumption electron-like.
IGBT technology includes two kinds: planarized structure (planar) and slot type structure (trench).Wherein groove
Type structure is that new technique improves the unit intensity of unit, Jin Er great on the basis of not influencing other any electrical characteristics
Conduction loss is improved greatly.Therefore, groove-shaped IGBT is thinner than plane IGBT, more high current density and more inexpensive.
And groove-shaped IGBT is easy to appear leakage current when unfailing performance is verified and suddenly increases and chip is caused to burn, main cause
To cause on chip surface or certain internal region technique there are weak link.Optimize the method for groove-shaped IGBT unfailing performance
Have: one, being improved by chip structure；Two, improved by encapsulated phase.And in the whole design of IGBT device, if device
Chip design parameter have confirmed that, improved by flow again the reliability of chip substantially can not (because the flow period is long,
It is at high cost).In consideration of it, most quick, most cost-saving and most effective way are to improve entire device by the packaged type of chip
The unfailing performance of part.
Currently, domestic have no the mature encapsulation technology for slim groove-shaped IGBT.It is only right for bonding wire bond technology
Three watt level of wire bonding process, strength and time parameter coordinations improve bonding wire reliability, connect to bonding wire and chip
The first solder joint connect is not managed, and the groove number below the first solder joint can be made especially few, and a small amount of groove when welding is caused to bear
Biggish compression and damage.
Utility model content
The utility model provides a kind of trench-type insulated gate bipolar transistor encapsulating structure, and above-mentioned one kind is groove-shaped absolutely
The first Bonding pressure is evenly distributed on more gate trench in edge grid bipolar junction transistor encapsulating structure, reduces single ditch
The stress of slot improves bonding wire yield, and then improves the reliability of entire chip.
In order to achieve the above objectives, the utility model the following technical schemes are provided:
A kind of trench-type insulated gate bipolar transistor encapsulating structure, comprising:
Trench-type insulated gate bipolar transistor, the trench-type insulated gate bipolar transistor include being electrically connected with emitter
The emitter metal layer connect and the groove type grid positioned at emitter metal layer side；
Lead frame, the lead frame include putting for fixing the chip of the trench-type insulated gate bipolar transistor
Set area and emitter exit；
Connect the first bonding wire of the emitter metal layer Yu the emitter pin, first bonding wire one end with it is described
Emitter metal layer connects the first solder joint to form bar shaped, the other end and the emitter away from the surface of the groove type grid
Exit connects to form the second solder joint, and the extension for extending perpendicularly to the groove type grid groove of first solder joint
Direction.
Above-mentioned trench-type insulated gate bipolar transistor encapsulating structure, including trench-type insulated gate bipolar transistor, draw
Wire frame and the first bonding wire for being electrically connected trench-type insulated gate bipolar transistor and lead frame, groove-shaped insulated gate bipolar
Transistor npn npn has the emitter metal layer being electrically connected with emitter and the groove type grid positioned at emitter metal layer side,
Lead frame has chip rest area and emitter exit for fixing groove type insulated gate bipolar transistor, groove
Type insulated gate bipolar transistor is fixed on chip rest area, makes emitter metal layer and emitter exit by the first bonding wire
Electrical connection, wherein extending perpendicularly to for the first solder joint of the bar shaped that the first bonding wire is connect with emitter metal layer is groove-shaped
The extending direction of gate trench, since the groove extending direction on the first solder joint extending direction and groove type grid of bar shaped hangs down
Directly, cause the first solder joint that can be pressed onto more gate trench, more gate trench is made to share the pressure of the first solder joint, reduce
The stress of single groove avoids chip damage when welding, improves bonding wire yield, and then improve the reliable of entire chip
Property.
Preferably, part of first bonding wire between first solder joint and the second solder joint forms curved portion, institute
The camber for stating emitter metal layer described in the apogee distance of curved portion is 750 microns to 1000 microns.
Preferably, the emitter exit has the first work line pad for connect with first bonding wire, and described the
Two solder joints are formed in described first and write on line pad.
Preferably, the first weldering described at least one is connected between the emitter metal layer and the first work line pad
Line.
Preferably, the lead frame further includes gate terminal, the groove type grid by the second bonding wire with it is described
Gate terminal electrical connection.
Preferably, the trench-type insulated gate bipolar transistor include silicon substrate, the institute that is formed on the silicon substrate
Groove type grid is stated, the insulating layer of silicon oxide on the groove type grid surface is formed in and is formed in the insulating layer of silicon oxide
The emitter metal layer away from the silicon substrate side.
Preferably, the trench-type insulated gate bipolar transistor further includes being located at the silicon substrate away from described groove-shaped
The collector of grid side, the lead frame further include collector terminal, and the collector in conjunction with material with described by drawing
The chip rest area of wire frame is electrically connected and physical connection.
It preferably, further include the fully filled plastic shell in inside formed by plastic package process.
It is brilliant that the utility model also provides groove-shaped insulated gate bipolar provided by a kind of above-mentioned any technical solution of production
The method of body pipe encapsulating structure, comprising:
Trench-type insulated gate bipolar transistor is fixed on to the chip rest area of lead frame；
First bonding wire one end and the trench-type insulated gate bipolar transistor are made using ultrasonic bonding chopper pressure welding
The connection of emitter metal layer and formation extend perpendicularly to the first solder joint of the bar shaped of groove type grid groove extending direction；
Ultrasonic bonding chopper is vertically lifted and stops the certain predetermined time so that first bonding wire is generated setting high
The camber of degree；
Ultrasonic bonding chopper is jumped into pressure welding at the emitter exit of the lead frame, make first bonding wire with
The emitter exit connection and the second solder joint of formation.
In the production method of above-mentioned trench-type insulated gate bipolar transistor encapsulating structure, using ultrasonic bonding chopper pressure
Weldering forms the first solder joint of the bar shaped perpendicular to groove type grid groove extending direction, by supersonic welding after the completion of the first solder joint
It connects after chopper vertically lifts and to form the camber of setting height, ultrasonic wave chopper is transferred at the emitter exit of lead frame and is pressed
Weld the second solder joint, complete the weldering pressure to the first bonding wire, in above-mentioned production method due to by the first solder joint of bar shaped perpendicular to ditch
The groove of groove profile grid is arranged, and causes the first solder joint that can be pressed onto more gate trench, and more gate trench is made to share the
The pressure of one solder joint reduces the stress of single groove, avoids chip damage when welding, improves bonding wire yield, Jin Erti
The high reliability of entire chip.
Preferably, the preset time is 1 millisecond to 10 milliseconds.
Preferably, the camber of the first bonding wire setting height is 750 microns to 1000 microns.
Preferably, trench-type insulated gate bipolar transistor chip is completed to be electrically connected with corresponding pin on lead frame
Afterwards, it is internal complete to be formed to use the combination device of plastic packaging material filling trench-type insulated gate bipolar transistor chip and lead frame
The plastic shell of full packing.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of trench-type insulated gate bipolar transistor provided by the embodiment of the utility model；
Fig. 2 is a kind of structural schematic diagram of groove type grid provided by the embodiment of the utility model；
Fig. 3 is a kind of structure of trench-type insulated gate bipolar transistor encapsulating structure provided by the embodiment of the utility model
Schematic diagram；
Fig. 4 is the top view of structural schematic diagram in Fig. 3；
Fig. 5 is a kind of production of trench-type insulated gate bipolar transistor encapsulating structure provided by the embodiment of the utility model
Method flow diagram.
Icon:
1- trench-type insulated gate bipolar transistor；11- silicon substrate；12- groove type grid；13- insulating layer of silicon oxide；
14- emitter metal layer；2- lead frame；21- chip rest area；22- first writes line pad；23- second writes line pad；24- current collection
Pole exit；The first bonding wire of 3-；The first solder joint of 31-；The second solder joint of 32-；33- curved portion；4- combination material.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
Fig. 1 to Fig. 3 is please referred to, the utility model provides a kind of trench-type insulated gate bipolar transistor encapsulating structure, packet
It includes:
Trench-type insulated gate bipolar transistor 1, trench-type insulated gate bipolar transistor 1 include being electrically connected with emitter
Emitter metal layer 14 and groove type grid 12 positioned at 14 side of emitter metal layer；
Lead frame 2, lead frame 2 include the chip rest area for fixing groove type insulated gate bipolar transistor 1
21 and emitter exit；
Connect the first bonding wire 3 of emitter metal layer 14 and emitter pin, 3 one end of the first bonding wire and emitter metal layer
14 connect the first solder joint 31 to form bar shaped away from the surface of groove type grid 12, and the other end connect to be formed with emitter exit
Second solder joint 32, and the extending direction for extending perpendicularly to 12 groove of groove type grid of the first solder joint 31.
A kind of trench-type insulated gate bipolar transistor encapsulating structure that above-mentioned utility model embodiment provides, including groove
Type insulated gate bipolar transistor 1, lead frame 2 and electrical connection trench-type insulated gate bipolar transistor 1 and lead frame 2
The first bonding wire 3, trench-type insulated gate bipolar transistor 1 has the emitter metal layer 14 that is electrically connected with emitter and position
Groove type grid 12 in 14 side of emitter metal layer, lead frame 2 have brilliant for fixing groove type insulated gate bipolar
The chip rest area 21 of body pipe 1 and emitter exit, trench-type insulated gate bipolar transistor 1 are fixed on chip rest area
21, it is electrically connected emitter metal layer 14 with emitter exit by the first bonding wire 3, wherein the first bonding wire 3 and emitter gold
The extending direction for extending perpendicularly to 12 groove of groove type grid for belonging to the first solder joint 31 of the bar shaped that layer 14 connects, due to item
31 extending direction of the first solder joint of shape is vertical with the groove extending direction in groove type grid 12, causes the first solder joint 31 that can press
To more gate trench, so that more gate trench is shared the pressure of the first solder joint 31, reduce the stress of single groove, keep away
Chip damage when no-welding, improves bonding wire yield, and then improve the reliability of entire chip.
In above-mentioned utility model embodiment, specifically, as shown in figure 3, the first bonding wire 3 is located at the first solder joint 31 and the second weldering
Part between point 32 forms curved portion 33, and the camber of the apogee distance emitter metal layer 14 of curved portion 33 is 750 microns
To 1000 microns.The camber of this curved portion 33 is higher than the camber of conventional bonding wire, and Bonding pressure is made to be evenly distributed on more groove
On, the stress of each groove is further balanced, chip damage when welding is avoided, improves bonding wire yield；And because first
The curved portion 33 of bonding wire 3 is raised, and increases the first bonding wire 3 at a distance from chip, is conducive to the plastic packaging material in plastic package chip
It is filled up completely, improves bonding wire and weld yield, and improve the global reliability of device.
In above-mentioned utility model embodiment, as shown in figure 4, emitter exit has for connecting with the first bonding wire 3
First writes line pad 22, and the second solder joint 32 is formed on the first work line pad 22, realizes emitter metal layer 14 and emitter is drawn
The electrical connection at end.
In above-mentioned utility model embodiment, at least one the is connected between emitter metal layer 14 and the first work line pad 22
One bonding wire 3.For example, in order to reach same current class, can be write at same if necessary to the first bonding wire 3 for welding a 20mil
Two the first bonding wires of 10mil 3 are welded on line pad, two first bonding wires 3 of weldering can expand the first solder joint 31 and emitter metal layer 14
Contact area, and then reduce influence of the welding stress to chip.In practical applications, the first bonding wire 3 and first writes line pad 22
Quantity select according to the actual situation, herein with no restrictions.For example, the first work line pad 22 can be one, or more
A, when it is multiple that first, which writes line pad 22, more first bonding wires 3 are corresponding to be connect with multiple first work line pads 22.
In above-mentioned utility model embodiment, as shown in figure 4, lead frame 2 further includes gate terminal, groove type grid 12
It is electrically connected by the second bonding wire with gate terminal.Specifically, gate terminal has for being electrically connected with the second bonding wire
Two write line pad 23.
In above-mentioned utility model embodiment, specifically, as shown in Figure 1, trench-type insulated gate bipolar transistor 1 includes silicon
Substrate 11, the groove type grid 12 being formed on silicon substrate 11, the insulating layer of silicon oxide 13 for being formed in 12 surface of groove type grid
And it is formed in the emitter metal layer 14 that insulating layer of silicon oxide 13 deviates from 11 side of silicon substrate.
In above-mentioned utility model embodiment, trench-type insulated gate bipolar transistor 1 further includes being located at silicon substrate 11 to deviate from
The collector of 12 side of groove type grid, lead frame 2 further include collector terminal 24, and collector is by combining material 4 and drawing
The chip rest area 21 of wire frame 2 is electrically connected and physical connection.Optionally, in conjunction with material 4 can be conducting resinl, realize collector with
The electrical connection of lead frame 2.It can also be put in conjunction with the material of material 4 for other chips that can be realized collector and lead frame 2
The material of area 21 electrical connection and physical connection is set, herein with no restrictions.
It should be noted that the position arrangement of the work line pad on lead frame 2 may design not according to actual production
Together, it is not limited to structure shown in Fig. 4.
It further include the fully filled plastic shell in inside formed by plastic package process, energy in above-mentioned utility model embodiment
Enough guarantee hole of not leaving a blank inside plastic device, improve the welding yield of bonding wire, improves the reliability of device entirety.
In above-mentioned utility model embodiment, the first bonding wire 3 is metallic conductor, such as aluminum steel or copper wire etc., Neng Goujie
About cost of manufacture.
The utility model also provides groove-shaped insulated gate bipolar crystal provided by a kind of above-mentioned any embodiment of production
The method of pipe encapsulating structure, as shown in Figure 5, comprising the following steps:
S501: trench-type insulated gate bipolar transistor is fixed on to the chip rest area of lead frame；
S502: first bonding wire one end and trench-type insulated gate bipolar transistor are made using ultrasonic bonding chopper pressure welding
The connection of emitter metal layer and formation extend perpendicularly to the first solder joint of the bar shaped of groove type grid groove extending direction；
S503: ultrasonic bonding chopper is vertically lifted and stops the certain predetermined time so that the first bonding wire is generated setting high
The camber of degree；
S504: jumping to pressure welding at the emitter exit of lead frame for ultrasonic bonding chopper, makes the first bonding wire and hair
Emitter terminal connection and the second solder joint of formation.
In the production method for the trench-type insulated gate bipolar transistor encapsulating structure that above-mentioned utility model embodiment provides,
The first solder joint that the bar shaped perpendicular to groove type grid groove extending direction is formed using ultrasonic bonding chopper pressure welding, first
Ultrasonic bonding chopper is vertically lifted after the completion of solder joint after forming the camber of setting height, ultrasonic wave chopper is transferred to lead frame
Pressure welding goes out the second solder joint at the emitter exit of frame, completes the weldering pressure to the first bonding wire, due to by item in above-mentioned production method
First solder joint of shape is arranged perpendicular to the groove of groove type grid, causes the first solder joint that can be pressed onto more gate trench, makes
More gate trench share the pressure of the first solder joint, reduce the stress of single groove, avoid chip damage when welding, mention
High bonding wire yield, and then improve the reliability of entire chip.
The principle of above-mentioned ultrasonic bonding are as follows: apply certain pressure in vertical direction, apply in chip plane direction certain
Vibration frequency form the first solder joint so that the metal layer above chip is in conjunction with bonding wire.
In above-mentioned utility model embodiment, according to industrial concrete condition, in order to improve the utilization rate of time, preset
Time can be set to 1 millisecond to 10 milliseconds.
In above-mentioned utility model embodiment, the camber of the first bonding wire setting height can be 750 microns to 1000 microns.This
The camber of range is higher than the camber of conventional bonding wire, is evenly distributed on Bonding pressure on more groove, further balances each
The stress of groove avoids chip damage when welding, improves bonding wire yield；And because of 33 quilt of curved portion of the first bonding wire 3
It draws high, increases the first bonding wire 3 at a distance from chip, be conducive to being filled up completely in plastic package chip plastic packaging material, improve bonding wire
Yield is welded, and improves the global reliability of device.
In above-mentioned utility model embodiment, it is corresponding on lead frame to complete trench-type insulated gate bipolar transistor chip
After the electrical connection of pin, using the combination device of plastic packaging material filling trench-type insulated gate bipolar transistor chip and lead frame
To form internal fully filled plastic shell, guarantee to be filled up completely inside plastic device, the welding of bonding wire is improved in hole of not leaving a blank
Yield, and improve the global reliability of device.Preferably, it is filled when plastic packaging material is filled along mould stream direction, i.e., product is in plastic packaging
In the process, the plastic packaging material of melting is filled by the gum-injecting port of plastic package die into product.
Obviously, those skilled in the art the utility model embodiment can be carried out various modification and variations without departing from
The spirit and scope of the utility model.In this way, if these modifications and variations of the present invention belong to the utility model right
It is required that and its within the scope of equivalent technologies, then the utility model is also intended to include these modifications and variations.
Claims (8)
1. a kind of trench-type insulated gate bipolar transistor encapsulating structure characterized by comprising
Trench-type insulated gate bipolar transistor, the trench-type insulated gate bipolar transistor include being electrically connected with emitter
Emitter metal layer and groove type grid positioned at emitter metal layer side；
Lead frame, the lead frame include the chip rest area for fixing the trench-type insulated gate bipolar transistor
And emitter exit；
Connect the first bonding wire of the emitter metal layer Yu the emitter pin, first bonding wire one end and the transmitting
Pole metal layer connects the first solder joint to form bar shaped away from the surface of the groove type grid, and the other end and the emitter are drawn
End connection forms the second solder joint, and the extension side for extending perpendicularly to the groove type grid groove of first solder joint
To.
2. trench-type insulated gate bipolar transistor encapsulating structure according to claim 1, which is characterized in that described first
Part of the bonding wire between first solder joint and the second solder joint forms curved portion, described in the apogee distance of the curved portion
The camber of emitter metal layer is 750 microns to 1000 microns.
3. trench-type insulated gate bipolar transistor encapsulating structure according to claim 1, which is characterized in that the transmitting
Pole exit has first for connecting with first bonding wire to write line pad, and second solder joint is formed in described first and writes line
On pad.
4. trench-type insulated gate bipolar transistor encapsulating structure according to claim 3, which is characterized in that the transmitting
The first bonding wire described at least one is connected between pole metal layer and the first work line pad.
5. trench-type insulated gate bipolar transistor encapsulating structure according to claim 1, which is characterized in that the lead
Frame further includes gate terminal, and the groove type grid is electrically connected by the second bonding wire with the gate terminal.
6. trench-type insulated gate bipolar transistor encapsulating structure according to claim 1, which is characterized in that the groove
Type insulated gate bipolar transistor include silicon substrate, the groove type grid being formed on the silicon substrate, be formed in it is described
The insulating layer of silicon oxide on groove type grid surface and be formed in the insulating layer of silicon oxide deviate from the silicon substrate side institute
State emitter metal layer.
7. trench-type insulated gate bipolar transistor encapsulating structure according to claim 6, which is characterized in that the groove
Type insulated gate bipolar transistor further includes the collector for deviating from the groove type grid side positioned at the silicon substrate, described to draw
Wire frame further includes collector terminal, and the collector in conjunction with material with the chip rest area of the lead frame by being electrically connected
And physical connection.
8. trench-type insulated gate bipolar transistor encapsulating structure according to claim 1, which is characterized in that further include by
The fully filled plastic shell in inside that plastic package process is formed.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821259335.5U CN208422903U (en) | 2018-08-06 | 2018-08-06 | A kind of trench-type insulated gate bipolar transistor encapsulating structure |
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| CN201821259335.5U CN208422903U (en) | 2018-08-06 | 2018-08-06 | A kind of trench-type insulated gate bipolar transistor encapsulating structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110745772A (en) * | 2019-10-21 | 2020-02-04 | 重庆大学 | MEMS stress isolation packaging structure and manufacturing method thereof |
| WO2020029884A1 (en) * | 2018-08-06 | 2020-02-13 | 珠海格力电器股份有限公司 | Trench insulated-gate bipolar transistor packaging structure and manufacturing method therefor |
-
2018
- 2018-08-06 CN CN201821259335.5U patent/CN208422903U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020029884A1 (en) * | 2018-08-06 | 2020-02-13 | 珠海格力电器股份有限公司 | Trench insulated-gate bipolar transistor packaging structure and manufacturing method therefor |
| US11688698B2 (en) | 2018-08-06 | 2023-06-27 | Gree Electric Appliances, Inc. Of Zhuhai | Trench insulated gate bipolar transistor packaging structure and method for manufacturing the trench insulated gate bipolar transistor |
| CN110745772A (en) * | 2019-10-21 | 2020-02-04 | 重庆大学 | MEMS stress isolation packaging structure and manufacturing method thereof |
| CN110745772B (en) * | 2019-10-21 | 2023-10-20 | 重庆大学 | MEMS stress isolation packaging structure and manufacturing method thereof |
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