CN213691998U - Novel power semiconductor module of design - Google Patents
Novel power semiconductor module of design Download PDFInfo
- Publication number
- CN213691998U CN213691998U CN202022873502.9U CN202022873502U CN213691998U CN 213691998 U CN213691998 U CN 213691998U CN 202022873502 U CN202022873502 U CN 202022873502U CN 213691998 U CN213691998 U CN 213691998U
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- power
- semiconductor module
- power semiconductor
- ceramic substrate
- copper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model relates to a power semiconductor technical field, concretely relates to novel power semiconductor module of design, including covering copper ceramic substrate and power terminal, cover copper ceramic substrate be equipped with power device on the ceramic substrate and with the peripheral circuit that the power device electricity is connected, the power terminal includes weld part, extraction portion and kink, the kink is connected weld part and extraction portion, the weld part with cover copper ceramic substrate pass through ultrasonic bonding with the electricity be connected the power terminal with peripheral circuit, extraction portion is used for being connected with external circuit. The utility model provides a pair of novel power semiconductor module of design not only can carry out the heavy current through-flow, and its production efficiency is high moreover, and the reliability is high, long service life to overall structure is compact, and is with low costs.
Description
Technical Field
The utility model relates to a power semiconductor technology field, concretely relates to novel power semiconductor module of design.
Background
As shown in fig. 1, a power semiconductor module in the prior art is generally manufactured by a pin welding process, but since the cross section of a pin a is very small, the current capacity is limited, and large current flow cannot be realized; in order to realize high-current through, a plurality of pin needles a are needed, so that the cost is high, the production efficiency is low, the limitation on the design space of a product is large, and the platform expansion is not facilitated; in addition, the welding area of the pin needle a is small, so that the risk of breakage caused by welding stress is high, and the service life of the product is short.
SUMMERY OF THE UTILITY MODEL
The utility model discloses a solve among the prior art power semiconductor module and adopt pin needle to lead to the poor and low technical problem of production efficiency of through-flow ability, provided the power semiconductor module of a novel design, the power semiconductor module of using this kind of novel design can realize that heavy current through-flow and production efficiency are high.
The technical scheme of the utility model:
a power semiconductor module of novel design, comprising:
the copper-clad ceramic substrate is provided with a power device and a peripheral circuit electrically connected with the power device;
the power terminal comprises a welding part, a leading-out part and a bending part, the bending part is connected with the welding part and the leading-out part, the welding part and the copper-clad ceramic substrate are welded through ultrasonic waves to be electrically connected with the power terminal and the peripheral circuit, and the leading-out part is used for being connected with an external circuit.
Further, the welding part is perpendicular to the lead-out part.
Furthermore, the power terminals are multiple, the power semiconductor module with the novel design comprises a plurality of power circuit areas corresponding to the power terminals one to one, and the power circuit areas are electrically connected through conductive wires.
Furthermore, the number of the power terminals is three, the number of the power circuit areas is three, and the power circuit areas are respectively a first power circuit area, a second power circuit area and a third power circuit area, and protruding portions facing the second power circuit area are arranged on the first power circuit area and the third power circuit area.
Furthermore, the power semiconductor module of novel design still includes a plurality of signal terminals, signal terminal includes welding section, draws forth section and middlings, the welding section with copper-clad ceramic substrate ultrasonic bonding, the middlings is connected the welding section with draw forth the section, draw forth the section with external circuit connects.
Furthermore, the power semiconductor module of novel design still includes the signal circuit district, dispose signal terminal on the signal circuit district, the signal circuit district passes through the conducting wire and is connected with power device electricity.
Furthermore, the power semiconductor module of novel design still includes temperature sensor, temperature sensor draws forth through the temperature measurement terminal.
Furthermore, the power semiconductor module of the novel design further comprises a shell, the copper-clad ceramic substrate is arranged in the shell, and a through hole for allowing the leading-out part of the power terminal to penetrate out is formed in the shell.
Further, the shell is filled with a sealing material.
Furthermore, the first surface of the copper-clad ceramic substrate is provided with the peripheral circuit, and the second surface of the copper-clad ceramic substrate is provided with a metal heat dissipation plate.
After the technical scheme is adopted, the utility model provides a pair of novel power semiconductor module of design compares with prior art, has following beneficial effect:
(1) the power semiconductor module of the utility model is provided with the power terminal on the copper-clad ceramic substrate, compared with the prior art, the power terminal has large sectional area and strong through-current capability, and can realize large-current through-current;
(2) the power semiconductor module of the utility model has the advantages of less number of power terminals, low cost, more compact overall structure and contribution to platform expansion;
(3) the utility model discloses a power terminal is formed with the weld part, and this weld part and copper-clad ceramic substrate are formed with the ultrasonic pressure welding face, so can connect both through ultrasonic welding, because the terminal quantity is less, ultrasonic welding is fast, the energy consumption is low, makes its production efficiency high; moreover, the ultrasonic welding spot has high strength and good stability, so that the power semiconductor module has higher reliability and long service life;
(4) the utility model has the advantages that through reasonable layout of the power circuit areas, the protruding parts are arranged on the first power circuit area and the third power circuit area, and the power terminals are welded on the protruding parts, so that the whole structure is more compact and the size is smaller;
(5) the utility model discloses a temperature sensor real-time supervision power semiconductor module's temperature prevents that the high temperature from breaking down or burning out.
Drawings
Fig. 1 is a schematic structural diagram of a power semiconductor module in the prior art;
FIG. 2 is a schematic structural view of the copper-clad ceramic substrate of the present embodiment;
FIG. 3 is a front view of the copper-clad ceramic substrate of the present embodiment;
fig. 4 is a schematic structural diagram of the power terminal of the present embodiment;
FIG. 5 is a schematic structural diagram of the housing of the present embodiment;
fig. 6 is a schematic structural diagram of a power semiconductor module of the present embodiment;
fig. 7 is a schematic structural diagram of a signal terminal of the present embodiment;
fig. 8 is a schematic position diagram of the metal heat sink of the present embodiment.
Wherein the content of the first and second substances,
a pin needle a;
the copper-clad ceramic substrate comprises a copper-clad ceramic substrate 1, a first power circuit area 11, a second power circuit area 12, a third power circuit area 13, a protruding part 14, a signal circuit area 15, a power device 16, a temperature sensor 17, conductive wires 18 and a metal heat dissipation plate 19;
the temperature measuring device comprises a power terminal 21, a welding part 211, a leading-out part 212, a bending part 213, a signal terminal 22, a welding section 221, a leading-out section 222, a middle section 223 and a temperature measuring terminal 23;
the shell 3, the through hole 31 and the through hole 32.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the orientation words such as "front, back, up, down, left, right", "horizontal, vertical, horizontal" and "top, bottom" etc. are usually based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplification of description, and in the case of not making a contrary explanation, these orientation words do not indicate and imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore, should not be interpreted as limiting the scope of the present invention; the terms "inner and outer" refer to the inner and outer relative to the profile of the respective component itself.
It should be noted that the terms "first", "second", and the like are used to define the components, and are only used for convenience of distinguishing the corresponding components, and if not stated otherwise, the terms have no special meaning, and therefore, the scope of the present invention should not be construed as being limited.
As shown in fig. 2 to 4, the power semiconductor module of the present embodiment includes a copper-clad ceramic substrate 1 and a power terminal 21 disposed on the copper-clad ceramic substrate 1, specifically, a power device 16 and a peripheral circuit electrically connected to the power device 16 are disposed on the copper-clad ceramic substrate 1, the power terminal 21 includes a welding portion 211, a lead-out portion 212 and a bending portion 213, the bending portion 213 connects the welding portion 211 and the lead-out portion 212, the welding portion 211, the lead-out portion 212 and the bending portion 213 can be integrally formed, a contact surface of the welding portion 211 and the copper-clad ceramic substrate 1 forms an ultrasonic bonding surface, the power terminal 21 and the peripheral circuit are electrically connected by ultrasonic bonding, and the lead-out portion 212 is used for connecting with an external circuit.
In this way, the power terminal 21 is provided on the copper-clad ceramic substrate 1 in the power semiconductor module of the novel design of the present embodiment, compared with the prior art, the power terminal 21 has a large sectional area and a strong current capacity, and the current capacity of a single power terminal 21 is the sum of the current capacities of a plurality of pin needles in the prior art. In addition, the number of the power terminals 21 is small, the cost is low, the overall structure is compact, and the platform expansion is facilitated.
Further, the power terminal 21 of the embodiment is formed with the welding portion 211, and the welding portion 211 and the copper-clad ceramic substrate 1 are formed with the square ultrasonic pressure welding surface, so that the two can be connected by ultrasonic welding. Moreover, the ultrasonic welding spot has high strength and good stability, water cooling and gas protection are not needed in the welding process, the deformation of the welded power terminal 21 is very small, and no solder is arranged below the welded power terminal, so that the reliability of the power semiconductor module is higher. In addition, the ultrasonic welding process comprises the function of crushing and cleaning an oxide layer on the surface of a welded part, the welding surface is clean and attractive, the cleaning after welding is not needed like other welding methods, and the pollution to the power device 16 of the semiconductor material is avoided. And pin needle among the prior art and copper cover do not have great contact surface between the ceramic substrate, can't carry out ultrasonic bonding, and ordinary welding production efficiency is low and cause the pin needle fracture easily moreover, and the power semiconductor module of the novel design of this embodiment is compared in prior art production efficiency height, and the reliability is high, long service life.
Preferably, the welding part 211 of the power terminal 21 of the present embodiment is perpendicular to the lead-out part 212, which facilitates the vertical lead-out of the lead-out part 212 and the connection of an external circuit.
As shown in fig. 5 to 6, the power semiconductor module of the present embodiment further includes a housing 3, the copper-clad ceramic substrate 1 is disposed in the housing 3, the housing 3 is provided with a via hole 31 for allowing the lead-out portion 212 of the power terminal 21 to pass through, and a through hole 32 for allowing the signal terminal 22 and the temperature measuring terminal 23 to pass through, so as to form a new package structure, and after the copper-clad ceramic substrate 1 with terminals and the housing 3 are assembled, the housing 3 is filled with a sealing material for sealing.
The power terminals 21 of this embodiment are multiple, the power semiconductor module includes multiple power circuit regions corresponding to the power terminals 21 one by one, the power circuit regions are electrically connected through the conductive wires 18, and the conductive wires 18 can be selected but not limited to aluminum wires. Specifically, as shown in fig. 2 to 3, there are three power terminals 21, three power circuit areas are provided, which are respectively a first power circuit area 11, a second power circuit area 12 and a third power circuit area 13, the second power circuit area 12 is located between the first power circuit area 11 and the third power circuit area 13, and the first power circuit area 11 and the third power circuit area 13 are both provided with a protruding portion 14 facing the second power circuit area 12, in this embodiment, the power terminals 21 are welded to the protruding portions 14 of the first power circuit area 11 and the third power circuit area 13, so that the space of the copper-clad ceramic substrate 1 can be fully utilized, and if the protruding portions 14 are not provided, as shown in fig. 3, the positions of the power terminals 21 of the first power circuit area 11 and the third power circuit area 13 need to be respectively shifted to the left and the right by a distance, and the through holes 31 corresponding to the two power terminals 21 on the housing 3 need to be moved to the left and the right, this results in an increase in the size of the housing 3. In the embodiment, through reasonable layout of the second power circuit area 12, the protruding portions 14 are arranged on the first power circuit area 11 and the third power circuit area 13, and the power terminals 21 are welded on the protruding portions 14, so that the overall structure is more compact and the size is smaller.
Further, as shown in fig. 2-3 and fig. 7, the power semiconductor module of the present embodiment further includes a plurality of signal terminals 22, the signal terminals 22 are carriers for loading signals, the signal terminals 22 include an integrally formed welding section 221, a lead-out section 222, and an intermediate section 223, the welding section 221 is ultrasonically welded to the copper-clad ceramic substrate 1, the intermediate section 223 connects the welding section 221 and the lead-out section 222, the intermediate section 223 has multiple bends and can play a role in buffering during welding, and the lead-out section 222 is connected to an external circuit. In this way, the signal terminal 22 is provided with the welding section 221, and ultrasonic welding is performed, so that the beneficial effects of high production efficiency, high reliability and long service life can be achieved.
Further, as shown in fig. 2 to 3, the power semiconductor module of the present embodiment further includes a signal circuit area 15, a signal terminal 22 is disposed on the signal circuit area 15, the signal circuit area 15 is electrically connected to the power device 16 through the conductive wire 18, and the signal terminal 22 may be disposed on the power circuit area or the signal circuit area 15 as needed and connected to the corresponding power device 16 through the conductive wire 18 and the peripheral circuit. In addition, it should be noted that the peripheral circuits of the present embodiment are configured on the power circuit area and the signal circuit area, and the present embodiment only shows the frame shape thereof, and the specific circuit can be designed according to actual requirements.
As shown in fig. 2-3, the power semiconductor module of the present embodiment further includes a temperature sensor 17, the temperature sensor 17 is selected but not limited to a thermistor, the temperature sensor 17 is led out through a temperature measuring terminal 23, the temperature measuring terminal 23 has the same structure as the signal terminal 22, and is ultrasonically welded to the copper-clad ceramic substrate 1, and the temperature sensor 17 is used in the present embodiment to monitor the temperature of the power semiconductor module in real time, so as to prevent high temperature from malfunctioning or burning.
As shown in fig. 8, in this embodiment, the peripheral circuit and the power terminal are disposed on the first surface of the copper-clad ceramic substrate 1, the metal heat dissipation plate 19 is disposed on the second surface of the copper-clad ceramic substrate 1, the copper-clad ceramic substrate 1 is used as an insulating substrate to ensure the pressure resistance of the product in different environments, and the heat dissipation capability of the product is strong, and then the heat can be further dissipated through the metal heat dissipation plate 19.
When the power semiconductor module with the novel design of the embodiment is manufactured, firstly, the power device 16 and the copper-clad ceramic substrate 1 are sintered together through lead-free welding materials such as soldering lugs or soldering paste, and then the power device 16 and each region of the copper-clad ceramic substrate 1 are interconnected through bonding of the conductive wires 18 so as to realize electrical connection; and then the power terminal 21, the signal terminal 22 and the temperature measuring terminal 23 are pressure-welded on the copper-clad ceramic substrate 1 by an ultrasonic welding process, then the shell 3 and the semi-finished product after ultrasonic welding are bonded together by using sealing materials such as silica gel, and finally the sealing protection of the power device is realized by glue pouring.
As can be seen from the above, the power semiconductor module with a novel design provided in this embodiment not only can perform a large current flow, but also has high production efficiency, high reliability, long service life, compact overall structure, and low cost.
The above, only be the concrete implementation of the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the utility model, the concept of which is equivalent to replace or change, should be covered within the protection scope of the present invention.
Claims (10)
1. A power semiconductor module of novel design, comprising:
the copper-clad ceramic substrate (1) is provided with a power device (16) and a peripheral circuit electrically connected with the power device (16) on the copper-clad ceramic substrate (1);
the power terminal (21), the power terminal (21) includes welding portion (211), extraction portion (212) and kink (213), kink (213) are connected welding portion (211) and extraction portion (212), welding portion (211) with copper-clad ceramic substrate (1) passes through ultrasonic bonding with the electricity is connected power terminal (21) and peripheral circuit, extraction portion (212) are used for being connected with external circuit.
2. The power semiconductor module of a new design according to claim 1, characterized in that the soldering portion (211) is perpendicular to the lead-out portion (212).
3. The power semiconductor module of claim 1, wherein the power terminals (21) are multiple, the power semiconductor module comprises multiple power circuit areas corresponding to the power terminals (21), and the power circuit areas are electrically connected through the conductive wires (18).
4. The power semiconductor module of a new design according to claim 3, characterized in that the number of the power terminals (21) is three, the number of the power circuit areas is three, and the power circuit areas are respectively a first power circuit area (11), a second power circuit area (12) and a third power circuit area (13), and the first power circuit area (11) and the third power circuit area (13) are provided with a protrusion (14) facing the second power circuit area (12).
5. The power semiconductor module of a new design according to claim 1, characterized in that the power semiconductor module further comprises a plurality of signal terminals (22), the signal terminals (22) comprise a bonding section (221), a lead-out section (222) and an intermediate section (223), the bonding section (221) is ultrasonically bonded to the copper-clad ceramic substrate (1), the intermediate section (223) connects the bonding section (221) and the lead-out section (222), and the lead-out section (222) is connected to the external circuit.
6. The power semiconductor module of a new design according to claim 1, characterized in that, the power semiconductor module further comprises a signal circuit area (15), a signal terminal (22) is configured on the signal circuit area (15), and the signal circuit area (15) is electrically connected with the power device (16) through a conductive wire (18).
7. The power semiconductor module of a new design according to claim 1, characterized in that the power semiconductor module further comprises a temperature sensor (17), the temperature sensor (17) leading out through a temperature measuring terminal (23).
8. The power semiconductor module of claim 1, further comprising a housing (3), wherein the copper-clad ceramic substrate (1) is disposed in the housing (3), and the housing (3) is provided with a via hole (31) for allowing a lead-out portion (212) of the power terminal (21) to pass through.
9. The power semiconductor module of a new design according to claim 8, characterized in that the housing (3) is filled with a sealing material.
10. The power semiconductor module of a new design according to claim 1, characterized in that the first side of the copper-clad ceramic substrate (1) is provided with the peripheral circuit, and the second side of the copper-clad ceramic substrate (1) is provided with a metal heat sink (19).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022873502.9U CN213691998U (en) | 2020-12-02 | 2020-12-02 | Novel power semiconductor module of design |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022873502.9U CN213691998U (en) | 2020-12-02 | 2020-12-02 | Novel power semiconductor module of design |
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| CN213691998U true CN213691998U (en) | 2021-07-13 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114226947A (en) * | 2021-12-30 | 2022-03-25 | 上海骄成超声波技术股份有限公司 | Terminal ultrasonic welding device and welding method |
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2020
- 2020-12-02 CN CN202022873502.9U patent/CN213691998U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114226947A (en) * | 2021-12-30 | 2022-03-25 | 上海骄成超声波技术股份有限公司 | Terminal ultrasonic welding device and welding method |
| CN114226947B (en) * | 2021-12-30 | 2023-09-22 | 上海骄成超声波技术股份有限公司 | Terminal ultrasonic welding device and welding method |
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