CN202749361U - High-power whole wafer insulated gate bipolar transistor (IGBT) ceramic packaging structure - Google Patents
High-power whole wafer insulated gate bipolar transistor (IGBT) ceramic packaging structure Download PDFInfo
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- CN202749361U CN202749361U CN 201220368026 CN201220368026U CN202749361U CN 202749361 U CN202749361 U CN 202749361U CN 201220368026 CN201220368026 CN 201220368026 CN 201220368026 U CN201220368026 U CN 201220368026U CN 202749361 U CN202749361 U CN 202749361U
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- 239000000919 ceramic Substances 0.000 title claims abstract description 27
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 10
- 230000007704 transition Effects 0.000 claims abstract description 18
- 238000003466 welding Methods 0.000 claims abstract description 9
- 229910052573 porcelain Inorganic materials 0.000 claims description 13
- 238000013507 mapping Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 abstract description 3
- 238000005538 encapsulation Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035900 sweating Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Abstract
The utility model relates to a high-power whole wafer insulated gate bipolar transistor (IGBT) ceramic packaging structure. The high-power whole wafer IGBT ceramic packaging structure comprises a ceramic base (1), a transition electrode (2) and an upper cover (3), wherein the upper cover (3) is covered on the ceramic base (1), the transition electrode (2) is arranged on a positive electrode (1-4), and the transition electrode (2) is provided with a gate pole needle locating hole (2-1), a gate pole ring locating groove (2-2) and a chip locating hole (2-3). By means of the high-power whole wafer IGBT ceramic packaging structure, processing efficiency and finished product rate can be substantially improved by simply processing a simple locating hole and a locating groove on the transition electrode without graving a rectangular electrode group. Meanwhile, the transition electrode does not need to be welded with a ceramic ring, and therefore, a welding stress is removed, the contact area is enlarged by about 20% compared with the rectangular electrode group, and performances of electric conduction and heat conduction of the electrode are improved.
Description
Technical field
The utility model relates to a kind of ceramic packaging shell
,Be particularly related to a kind of high-power whole wafer IGBT ceramic packaging shell.Belong to the power semiconductor device technical field.
Background technology
Igbt---IGBT, continuous expansion along with application, obtained in recent years fast development, become the main product of current power electronic device, the above high-power IGBT of kilo-ampere level has become the first-selection in the great power conversion circuit fields such as HVDC Light, track traffic, new forms of energy.
IGBT often is packaged into two kinds of structures, and a kind of is the plastic module structure that adopts chips welding and lead-in wire ultrasonic bonding, and the advantage of this structure is that technique is simple, and shortcoming is to realize single face heat radiation, reliability variation under the high-voltage great-current condition.Another kind is the ceramic module that adopts the flat crimping type encapsulation, the advantage of this structure is can two-side radiation, removed sweating heat tired, improved reliability, have a clear superiority in the application of high-power field, shortcoming is that each parts must have good consistency, therefore to technique require high.
Igbt chip often is made into independently square blade unit, concerning ceramic module, need to encapsulate each chip unit the rectangular electrode group of some protrusions of shell electrode engraving.To eliminate the mechanical stress of electrode group, the impact of welding the factors such as high temperature deformation fully, guarantee that whole electrode group surface has very high evenness, thereby satisfy the requirement of igbt chip compression joint type encapsulation, this will propose test to technology controlling and process, the rate of finished products that ceramic package is produced.
Along with the raising of igbt chip manufacturing technology, succeeded in developing at present a kind of on a whole chip wafer a plurality of independently IGBT of etching device cell, correspondingly need a kind of novel encapsulated shell to realize the encapsulation of whole wafer IGBT.
Summary of the invention
The purpose of this utility model is to overcome above-mentioned deficiency, and a kind of novel ceramic shell that is fit to whole wafer IGBT encapsulation is provided, and the gate pole that can realize all chip units of IGBT connects and draws.
The purpose of this utility model is achieved in that a kind of high-power whole wafer IGBT ceramic packaging shell, it comprises ceramic base, transition electrode and loam cake, described ceramic base comprises the anode flange of superimposed concentric welding from top to bottom, porcelain ring and anode seal circle, in described anode seal circle, be welded with one heart anode electrode, cross-under has the gate lead pipe on the shell wall of described porcelain ring, in described gate lead pipe, the outer end is welded with respectively inserted sheet and the outer inserted sheet of gate pole in the gate pole, described loam cake lid places on the ceramic base, loam cake includes cathode electrode and cathode flange, and described cathode flange is welded on the outer rim of cathode electrode with one heart; Described transition electrode places on the anode electrode, is provided with gate pole pin location hole, gate pole loop mapping groove and chip positioning hole at described transition electrode.
Compared with prior art, the beneficial effects of the utility model are:
The utility model does not need to carve the rectangular electrode group, only need at the transition electrode simple location hole of processing and location notch, working (machining) efficiency and rate of finished products have significantly been improved, and transition electrode does not need to weld mutually with the porcelain ring, therefore there is not welding stress, with rectangular electrode faciation ratio, contact area has increased about 20%, thereby has improved conduction, the heat conductivility of electrode.
Description of drawings
Fig. 1 is structural representation of the present utility model.
Fig. 2 is the structural representation of transition electrode of the present utility model.
Wherein:
Anode flange 1-1
Porcelain ring 1-2
Anode seal circle 1-3
Anode electrode 1-4
Gate lead pipe 1-5
The outer inserted sheet 1-6 of gate pole
Inserted sheet 1-7 in the gate pole
Gate pole pin location hole 2-1
Gate pole loop mapping groove 2-2
Chip positioning hole 2-3
Cathode electrode 3-1
Cathode flange 3-2.
Embodiment
Referring to Fig. 1, the utility model relates to a kind of high-power whole wafer IGBT ceramic packaging shell, mainly by ceramic base 1, transition electrode 2 and loam cake 3 form, wherein ceramic base 1 includes anode flange 1-1, porcelain ring 1-2, anode seal circle 1-3, anode electrode 1-4, gate lead pipe 1-5, inserted sheet 1-7 in the outer inserted sheet 1-6 of gate pole and the gate pole, anode seal circle 1-3 is welded on the lower surface of porcelain ring 1-2, anode flange 1-1 is welded on the upper surface of porcelain ring 1-2, described anode flange 1-1, from top to bottom superimposed concentric welding of porcelain ring 1-2 and anode seal circle 1-3, described anode electrode 1-4 is welded among the anode seal circle 1-3 with one heart, gate lead pipe 1-5 is connected on the porcelain ring 1-2 shell wall, inserted sheet 1-7 and the gate lead pipe 1-5 one end vertical welding that is in the porcelain ring 1-2 in the gate pole, the outer inserted sheet 1-6 horizontal welding of gate pole is connected to outer gate lead pipe 1-5 one end of porcelain ring 1-2; Described loam cake 3 lids place on the ceramic base 1, and loam cake 3 includes cathode electrode 3-1 and cathode flange 3-2, and described cathode flange 3-2 is welded on the outer rim of cathode electrode 3-1 with one heart; Described transition electrode 2 places on the anode electrode 1-4, be provided with gate pole pin location hole 2-1, gate pole loop mapping groove 2-2 and chip positioning hole 2-3 at described transition electrode 2, wherein the chip that encapsulates as required of gate pole pin location hole 2-1 and gate pole loop mapping groove 2-2 designs.
By the design of the outer inserted sheet 1-6 of inserted sheet 1-7, gate lead pipe 1-5 and gate pole in gate pole pin location hole 2-1, gate pole loop mapping groove 2-2, the gate pole, the connection that can realize whole wafer igbt chip gate pole with draw.
Claims (1)
1. high-power whole wafer IGBT ceramic packaging shell, it is characterized in that it comprises ceramic base (1), transition electrode (2) and loam cake (3), described ceramic base (1) comprises the anode flange (1-1) of superimposed concentric welding from top to bottom, porcelain ring (1-2) and anode seal circle (1-3), in described anode seal circle (1-3), be welded with one heart anode electrode (1-4), cross-under has gate lead pipe (1-5) on the shell wall of described porcelain ring (1-2), in described gate lead pipe (1-5), the outer end is welded with respectively inserted sheet (1-7) and the outer inserted sheet (1-6) of gate pole in the gate pole, described loam cake (3) lid places on the ceramic base (1), loam cake (3) includes cathode electrode (3-1) and cathode flange (3-2), and described cathode flange (3-2) is welded on the outer rim of cathode electrode (3-1) with one heart; Described transition electrode (2) places on the anode electrode (1-4), is provided with gate pole pin location hole (2-1), gate pole loop mapping groove (2-2) and chip positioning hole (2-3) at described transition electrode (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220368026 CN202749361U (en) | 2012-07-28 | 2012-07-28 | High-power whole wafer insulated gate bipolar transistor (IGBT) ceramic packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220368026 CN202749361U (en) | 2012-07-28 | 2012-07-28 | High-power whole wafer insulated gate bipolar transistor (IGBT) ceramic packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202749361U true CN202749361U (en) | 2013-02-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220368026 Expired - Lifetime CN202749361U (en) | 2012-07-28 | 2012-07-28 | High-power whole wafer insulated gate bipolar transistor (IGBT) ceramic packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202749361U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102768997A (en) * | 2012-07-28 | 2012-11-07 | 江阴市赛英电子有限公司 | High-power complete wafer IGBT (insulated gate bipolar translator) ceramic package housing |
| CN103367263A (en) * | 2013-07-22 | 2013-10-23 | 沈首良 | Improved injection molding packaging structure and packaging method of high-power semiconductor modules |
-
2012
- 2012-07-28 CN CN 201220368026 patent/CN202749361U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102768997A (en) * | 2012-07-28 | 2012-11-07 | 江阴市赛英电子有限公司 | High-power complete wafer IGBT (insulated gate bipolar translator) ceramic package housing |
| CN103367263A (en) * | 2013-07-22 | 2013-10-23 | 沈首良 | Improved injection molding packaging structure and packaging method of high-power semiconductor modules |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: 214405 Jiangsu city in Jiangyin Province, South Gate Street: Road No. 60 Patentee after: JIANGYIN SAIYING ELECTRON Co.,Ltd. Address before: 214432, Jiangyin, Jiangsu province Wuxi city Chengjiang industrial concentration zone, south slope Village No. 6 Patentee before: JIANGYIN SAIYING ELECTRON Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130220 |