CN209626196U - A kind of IGBT ceramic cartridge stress self-adaptive regulating structure - Google Patents
A kind of IGBT ceramic cartridge stress self-adaptive regulating structure Download PDFInfo
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- CN209626196U CN209626196U CN201920616685.0U CN201920616685U CN209626196U CN 209626196 U CN209626196 U CN 209626196U CN 201920616685 U CN201920616685 U CN 201920616685U CN 209626196 U CN209626196 U CN 209626196U
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Abstract
The utility model discloses a kind of IGBT ceramic cartridge stress self-adaptive regulating structures, including ceramic base and upper cover, the ceramic base includes emitter flange, ceramic ring, emit minimum flange and emitter copper briquetting, the outer wall surrounding of the emitter copper briquetting is welded with the minimum flange of transmitting, the top outer edge of the minimum flange of transmitting is welded with ceramic ring, the top one side of the ceramic ring is welded with emitter flange, the inner wall of the ceramic ring is welded with gate terminal, the upper cover includes collector copper briquetting, sub-collector flange, collector flange, the outer wall surrounding of the collector copper briquetting is welded with relatively thin sub-collector flange one side.The IGBT ceramic cartridge stress self-adaptive regulating structure, using thickness copper material, overlapped that mode is brazed, because of the stress that stress displacement generates when can alleviate encapsulation or detection by the plastic deformation of thin oxygen-free copper auxiliary flange, the performance and technology stability of encapsulation ensure that.
Description
Technical field
The utility model relates to ceramic cartridge technical field, specially a kind of IGBT ceramic cartridge stress automatic adjusument knot
Structure.
Background technique
IGBT is energy transformation, transmission and the core devices of control, is commonly called as " CPU " of power electronic equipment, and country's war is belonged to
Slightly property new industry is widely used in fields such as smart grid, rail traffic, electric car, aerospace and new energy equipments,
Market capacity is big；
Multiple stage IGBT ceramic cartridge is connect as two generations rectangular (rectangle) total pressure, and takes the lead in realizing volume production, has developed the whole world
The 3600A/4500V crimp type IGBT of maximum power capabilities, and it is defeated to promote the use of global first DC grid-Zhangbei County's direct current
Electrical engineering meets multiple stage IGBT compared to first generation circle total pressure, and rectangular area is bigger, more IGBT including four corners or
FRD chip will realize that gross area without dead angle uniform stressed, requires to propose very big challenge to the technique of each component；
Especially as the ceramic cartridge of package carrier, performance and technology stability are the key that determine encapsulation success or failure,
In ceramic cartridge preparation process other than material stress to be solved, cutting stress, high temperature brazing stress influence, collection when encapsulating
It is also to influence an important factor for encapsulating success or failure, therefore how to effectively reduce stress that electrode, which is pressurized and is displaced the encapsulation stress generated,
Influence, be an important topic for being badly in need of being solved now.
Utility model content
It is above-mentioned to solve the purpose of this utility model is to provide a kind of IGBT ceramic cartridge stress self-adaptive regulating structure
The problem of being proposed in background technique.
To achieve the above object, the utility model provides the following technical solutions: a kind of IGBT ceramic cartridge answers force adaptive
The section of adjustment structure, including ceramic base and upper cover, the ceramic base and upper cover is square or rectangle, the ceramic base
Including emitter flange, ceramic ring, the minimum flange of transmitting and emitter copper briquetting, the outer wall surrounding welding of the emitter copper briquetting
There is the minimum flange of transmitting, the top outer edge of the minimum flange of transmitting is welded with ceramic ring, the top one side weldering of the ceramic ring
It is connected to emitter flange, the inner wall of the ceramic ring is welded with gate terminal, and the upper cover includes collector copper briquetting, supplementary set
Electrode flange, collector flange, the outer wall surrounding of the collector copper briquetting are welded with relatively thin sub-collector flange one
Side, the upper wall surface of the sub-collector flange is welded with emitter flange, and sub-collector flange is located at emitter method
Blue top, the another side of the sub-collector flange is welded with relatively thin collector flange, and sub-collector method
Orchid is located at the top of collector flange, and the collector flange is symmetrically welded at the outer edge of emitter flange.
Preferably, the sub-collector flange with a thickness of 0.1-0.8mm.
Preferably, the sub-collector flange with a thickness of 0.3mm.
Preferably, the collector flange with a thickness of 0.5-1.5mm.
Preferably, the collector flange with a thickness of 0.8mm.
Preferably, the material of the sub-collector flange is oxygen-free copper.
Compared with prior art, the utility model has the beneficial effects that the IGBT ceramic cartridge stress automatic adjusument knot
Structure, using thickness copper material, overlapped that mode is brazed, and can be alleviated by the plastic deformation of thin oxygen-free copper auxiliary flange
Because of the stress that stress displacement generates when encapsulation or detection, the performance and technology stability of encapsulation ensure that.
Detailed description of the invention
Fig. 1 is the main view of the utility model；
Fig. 2 is the top view of the utility model.
In figure: 1, ceramic base；1-1, emitter copper briquetting；1-2, the minimum flange of transmitting；1-3, ceramic ring；1-4, emitter
Flange；1-5, grid draw section；2, upper cover；2-1, collector copper briquetting；2-2, sub-collector flange；2-3, collector method
It is blue.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
Embodiment 1, the utility model provides a kind of technical solution referring to FIG. 1-2: a kind of IGBT ceramic cartridge stress from
The section of adaptation adjustment structure, including ceramic base 1 and upper cover 2, the ceramic base 1 and upper cover 2 is square or rectangle, in side
In encapsulation or detection process, ceramic base 1 and upper cover 2 will receive certain power and occur centainly for shape or rectangle IGBT ceramic cartridge
Displacement, the ceramic base 1 includes emitter flange 1-4, ceramic ring 1-3, the minimum flange 1-2 and emitter copper briquetting 1- of transmitting
1, the outer wall surrounding of the emitter copper briquetting 1-1 is welded with the minimum flange 1-2 of transmitting, the top of the minimum flange 1-2 of transmitting
End outer edge is welded with ceramic ring 1-3, and the top one side of the ceramic ring 1-3 is welded with emitter flange 1-4, the ceramic ring 1-3
Inner wall be welded with gate terminal 1-5, the upper cover 2 includes collector copper briquetting 2-1, sub-collector flange 2-2, current collection
Pole flange 2-3, the outer wall surrounding of the collector copper briquetting 2-1 are welded with relatively thin sub-collector flange 2-2 one side,
The sub-collector flange 2-2 with a thickness of 0.3mm, the material of the sub-collector flange 2-2 is oxygen-free copper, by thin
Oxygen-free copper sub-collector flange 2-2 plastic deformation come alleviate encapsulation or detection when because stress displacement generate stress, institute
The upper wall surface for stating sub-collector flange 2-2 is welded with emitter flange 1-4, and sub-collector flange 2-2 is located at emitter
The top of flange 1-4, the another side of the sub-collector flange 2-2 are welded with relatively thin collector flange 2-3, and auxiliary
Help collector flange 2-2 to be located at the top of collector flange 2-3, the collector flange 2-3 with a thickness of 0.8mm, the collection
Electrode flange 2-3 is symmetrically welded at the outer edge of emitter flange 1-4, using relatively thin material as transition, can reduce
Stress when encapsulation, to avoid ceramic base 1 and upper cover 2 that certain displacement occurs in encapsulation or detection process.
Its detailed connection means is techniques well known, following mainly to introduce working principle and process, specific works
It is as follows.
In encapsulation or detection process, ceramic base 1 and upper cover 2 will receive certain rectangular or rectangle IGBT ceramic cartridge
Power F, so that certain displacement can occur, displacement while, can be to ceramic base emitter flange 1-4, ceramic ring 1-3 and emitter
Small flange 1-2 generates certain tensile stress and uneven, and especially diagonal 45 degree direction tensile stresses can more greatly, using thickness copper material
Overlapped, and mode is brazed, so that it may alleviate encapsulation by the plastic deformation of thin oxygen-free copper sub-collector flange 2-2
Or ceramic base 1 and upper cover 2 is avoided to be displaced the encapsulation stress generated and influence to encapsulate because of the stress that stress displacement generates when detection
Success or failure substantially increase success rate.
The 2-2 of sub-collector flange described in this structure is welded on the bottom end of emitter flange 1-4 by embodiment 2, described
Sub-collector flange 2-2 is welded on the bottom end of collector flange 2-3, and other structures are constant, can also play same effect.
Embodiment 3, the sub-collector flange 2-2 and the collector flange 2-3 can use relatively thin material
Material is used as transition, can reduce the material of stress when encapsulation, other structures are constant, can also play same effect.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art,
It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired
Change, replacement and variant, the scope of the utility model is defined by the appended claims and the equivalents thereof.
Claims (6)
1. a kind of IGBT ceramic cartridge stress self-adaptive regulating structure, it is characterised in that: including ceramic base (1) and upper cover (2),
The section of the ceramic base (1) and upper cover (2) is square or rectangle, and the ceramic base (1) includes emitter flange (1-
4), ceramic ring (1-3), the minimum flange (1-2) of transmitting and emitter copper briquetting (1-1), the outer wall of the emitter copper briquetting (1-1)
Surrounding is welded with the minimum flange (1-2) of transmitting, and the top outer edge of the minimum flange (1-2) of transmitting is welded with ceramic ring (1-3),
The top one side of the ceramic ring (1-3) is welded with emitter flange (1-4), and the inner wall of the ceramic ring (1-3) is welded with grid
Exit (1-5), the upper cover (2) include collector copper briquetting (2-1), sub-collector flange (2-2), collector flange
(2-3), the outer wall surrounding of the collector copper briquetting (2-1) are welded with relatively thin sub-collector flange (2-2) one side,
The upper wall surface of the sub-collector flange (2-2) is welded with emitter flange (1-4), and the position sub-collector flange (2-2)
Relatively thin collector is welded in the another side on the top of emitter flange (1-4), the sub-collector flange (2-2)
Flange (2-3), and sub-collector flange (2-2) is located at the top of collector flange (2-3), the collector flange (2-3)
It is symmetrically welded at the outer edge of emitter flange (1-4).
2. a kind of IGBT ceramic cartridge stress self-adaptive regulating structure according to claim 1, it is characterised in that: described auxiliary
Help collector flange (2-2) with a thickness of 0.1-0.8mm.
3. a kind of IGBT ceramic cartridge stress self-adaptive regulating structure according to claim 2, it is characterised in that: described auxiliary
Help collector flange (2-2) with a thickness of 0.3mm.
4. a kind of IGBT ceramic cartridge stress self-adaptive regulating structure according to claim 1, it is characterised in that: the collection
Electrode flange (2-3) with a thickness of 0.5-1.5mm.
5. a kind of IGBT ceramic cartridge stress self-adaptive regulating structure according to claim 4, it is characterised in that: the collection
Electrode flange (2-3) with a thickness of 0.8mm.
6. a kind of IGBT ceramic cartridge stress self-adaptive regulating structure according to claim 1, it is characterised in that: described auxiliary
The material for helping collector flange (2-2) is oxygen-free copper.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920616685.0U CN209626196U (en) | 2019-04-30 | 2019-04-30 | A kind of IGBT ceramic cartridge stress self-adaptive regulating structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920616685.0U CN209626196U (en) | 2019-04-30 | 2019-04-30 | A kind of IGBT ceramic cartridge stress self-adaptive regulating structure |
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| CN209626196U true CN209626196U (en) | 2019-11-12 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110047805A (en) * | 2019-04-30 | 2019-07-23 | 无锡天杨电子有限公司 | A kind of IGBT ceramic cartridge stress self-adaptive regulating structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110047805A (en) * | 2019-04-30 | 2019-07-23 | 无锡天杨电子有限公司 | A kind of IGBT ceramic cartridge stress self-adaptive regulating structure |
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