CN105789293A - Packaging structure of single-chip bidirectional IGBT module - Google Patents
Packaging structure of single-chip bidirectional IGBT module Download PDFInfo
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- CN105789293A CN105789293A CN201610294630.3A CN201610294630A CN105789293A CN 105789293 A CN105789293 A CN 105789293A CN 201610294630 A CN201610294630 A CN 201610294630A CN 105789293 A CN105789293 A CN 105789293A
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- 230000002457 bidirectional effect Effects 0.000 title abstract 5
- 238000004806 packaging method and process Methods 0.000 title abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 78
- 229910052802 copper Inorganic materials 0.000 claims abstract description 78
- 239000010949 copper Substances 0.000 claims abstract description 78
- 239000002184 metal Substances 0.000 claims abstract description 68
- 229910052751 metal Inorganic materials 0.000 claims abstract description 68
- 238000009413 insulation Methods 0.000 claims description 9
- 238000003466 welding Methods 0.000 abstract description 4
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 description 13
- 239000011159 matrix material Substances 0.000 description 9
- 238000009434 installation Methods 0.000 description 8
- 210000003168 insulating cell Anatomy 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
Abstract
The invention relates to a packaging structure of a single-chip bidirectional IGBT module. The packaging structure comprises a bottom metal plate, a bottom DBC plate, a single-chip bidirectional IGBT device, a top DBC plate and a top metal plate. The bottom DBC plate comprises a second gate electrode copper clad region and a second emission electrode copper clad region. The second gate electrode and the second emission electrode of the single-chip bidirectional IGBT device are respectively connected with the second gate electrode copper clad region and the second emission electrode copper clad region. The top DBC plate comprises a first gate electrode copper clad region and a first emission electrode copper clad region. The electrodes of the upper and lower surfaces of the single-chip bidirectional IGBT device are respectively welded on the two DBC plates, and metal bonding line interconnection is replaced by welding interconnection so that the problem of thermal mechanical fatigue failure of metal bonding lines and the welding interface thereof can be solved, and current surge resistant capacity and reliability of the module can be enhanced; meanwhile, interconnection distance between external pins and the electrodes can be shortened by welding interconnection in comparison with that of metal bonding line interconnection so that the parasitic parameters of the module can be reduced.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to the encapsulating structure of the two-way IGBT module of a kind of single-chip.
Background technology
At present, insulated gate bipolar transistor (IGBT) is the power electronic devices that one combines metal-oxide semiconductor fieldeffect transistor (MOSFET) and bipolar junction transistor advantage, IGBT is widely used with the performance of its excellence, greatly improves the performance of power electronic equipment and system.Traditional AC-DC-AC converter (AC-DC-AC changer), it is necessary to jumbo capacitor maintains the stable operation of intermediate DC link (DC link) so that the volume of changer, weight are all bigger.Additionally, compared with power device, the service life of capacitor is substantially not enough, thus have impact on the reliability of changer and service life.Ac-to-ac converter (AC-AC changer) eliminates intermediate DC link, and power device proposes the two-way gate-controlled switch of new requirement simultaneously.
Tradition reverse blocking IGBT can two-way blocking-up voltage, but can only one-way conduction electric current, as it is shown in figure 1, the two-way gate-controlled switch being made up of two antiparallel discrete reverse blocking IGBTs could meet requirement；And this two-way gate-controlled switch also exists the deficiencies such as volume, weight is big, constrains the performance of AC-AC changer to a certain extent.Wherein, G is gate pole, and E is emitter stage, and C is colelctor electrode.
The appearance of the two-way IGBT device of single-chip solves this problem, wherein, Fig. 2 is the schematic diagram of the two-way IGBT module of single-chip, by the voltage between two gate poles and corresponding two emitter stages of the control two-way IGBT device of single-chip, it may be achieved electric current two-way admittance and voltage two-way blocking-up.
Wherein, the right side of Fig. 3-5 respectively traditional discrete formula reverse blocking IGBT device depending on, overlook and elevational schematic view.As shown in figs 6-8, the upper surface of the two-way IGBT device of single-chip is provided with the first gate pole G1 and the first emitter E 1, and corresponding with it, upper surface is the first gate pole district and the first emitter region respectively；The lower surface of the two-way IGBT device of single-chip is provided with the second gate pole G2 and the second emitter E 2, and corresponding with it, lower surface is the second gate pole district and the second emitter region respectively.
At present the research work of the two-way IGBT device of single-chip is concentrated mainly in structure optimization and the preparation technology of device, but for device characteristics, in conjunction with the application requirement of power electronic equipment, the research work of its encapsulation technology is reported less.
Summary of the invention
(1) to solve the technical problem that
The technical problem to be solved in the present invention is to provide the encapsulating structure of the two-way IGBT module of a kind of single-chip, it is achieved the two-side radiation of the two-way IGBT module of single-chip, improves the power density of module；Cancel the metallic bond zygonema for interconnecting, reduce the parasitic parameter of module；Solve metallic bond zygonema and the problem of weld interface thermal mechanical fatigue inefficacy thereof, improve resistance to rush of current ability and the reliability of module.
(2) technical scheme
In order to solve above-mentioned technical problem, the invention provides the encapsulating structure of the two-way IGBT module of a kind of single-chip, it bottom metal including setting gradually from bottom to top, bottom DBC plate (Direct Bonding copper coin, namely DirectBondingCopper plate, DBC plate), the two-way IGBT device of single-chip, top DBC plate and top metal plate；Bottom DBC plate top surface is provided with the second gate pole lying copper region and the second emitter stage lying copper region；Second gate pole of the two-way IGBT device of single-chip and the second emitter stage are connected with the second gate pole lying copper region and the second emitter stage lying copper region respectively；DBC plate bottom surface, top is provided with the first gate pole lying copper region and the first emitter stage lying copper region；First gate pole of the two-way IGBT device of single-chip and the first emitter stage are connected with the first gate pole lying copper region and the first emitter stage lying copper region respectively；First gate pole external pin of the two-way IGBT device of single-chip, the first emitter stage external pin, the second gate pole external pin and the second emitter stage external pin are connected with the first gate pole lying copper region, the first emitter stage lying copper region, the second gate pole lying copper region and the second emitter stage lying copper region respectively.
Further, described gate pole lying copper region and emitter stage lying copper region are completely covered respectively and are close to gate pole district and the emitter region setting of the two-way IGBT device of described single-chip.
Further, described top DBC plate is close to and is arranged on described top metal plate；Described bottom DBC plate is close to and is arranged in described bottom metal.
Further, the encapsulating structure of the two-way IGBT module of described single-chip includes several two-way IGBT device of described single-chip, and the two-way IGBT device of several single-chips is arranged in parallel by described first gate pole lying copper region, the first emitter stage lying copper region, the second gate pole lying copper region and the second emitter stage lying copper region.
Further, being provided with liner between described bottom metal and top metal plate, this liner preferably employs insulating cell.Insulating cell plays the effect supporting two pieces of metallic plates, it is to avoid when module is installed, pressure experienced causes metallic plate and the excessive deformation of DBC plate, and then causes that the device being welded on DBC plate is impaired；Bottom metal, top metal plate and insulating cell are provided with installation through hole, the installation through hole perpendicular alignmnet of three, it is simple to the installation of the fixing and heat-transfer device of the two-way IGBT module of single-chip.Top metal plate and bottom metal have enough thickness and mechanical strength, meet top metal plate upper surface and the bottom metal lower surface demand as module mechanical erection face, and two mechanical erection faces are again as the thermally-conductive interface of module simultaneously.
Further, described bottom metal, bottom DBC plate, top metal plate and top DBC plate being provided with pin openings, described external pin stretches out from pin openings.
Further, it is circumferentially provided with sealed insulation shell between described bottom metal and top metal plate and along bottom DBC plate, the two-way IGBT device of single-chip and top DBC plate；The upper surface of the lower surface of bottom metal and top metal plate exposes.
Further, described first emitter stage external pin includes the first emitter stage main circuit pin and the first emitter stage drive circuit pin；Described second emitter stage external pin includes the second emitter stage main circuit pin and the second emitter stage drive circuit pin.
Sealed insulation shell makes top metal plate, bottom metal and external pin constitute an entirety, and two-way to DBC plate and single-chip IGBT device is sealed in inside, plays the effect of protection device and electric insulation.
(3) beneficial effect
With compared with the encapsulating structure of some two-way controllable switch module that antiparallel reverse blocking IGBT is constituted, useful the having the technical effect that the present invention has
(1) electrode on two-way for the single-chip upper and lower surface of IGBT device is respectively welded on two blocks of DBC plates, solder interconnections is utilized to instead of the interconnection of metallic bond zygonema, solve metallic bond zygonema and the problem of weld interface thermal mechanical fatigue inefficacy thereof, improve resistance to rush of current ability and the reliability of module；Meanwhile, compared with interconnecting with metallic bond zygonema, solder interconnections shortens the distance of external pin and electrode interconnection, reduces the parasitic parameter of module.
(2) electrode on two-way for the single-chip upper and lower surface of IGBT device is respectively welded on two blocks of DBC plates, forms " the two-way IGBT device of top DBC plate-single-chip-bottom DBC plate " sandwich structure.At the lower surface of the upper surface of top DBC plate and bottom DBC plate, it is respectively welded top metal plate and bottom metal, as mechanical erection face and the thermally-conductive interface of module.At the uniform coated with thermally conductive silicone grease of the upper surface of top metal plate and the lower surface of bottom metal, and the heat abstractor of coupling is installed, the heat that the two-way IGBT device of single-chip produces is by top metal plate and bottom metal conduction, realize the two-side radiation of module, comparing with by some two-way controllable switch module that antiparallel reverse blocking IGBT is constituted, the two-way IGBT module of single-chip has the power density of better heat conductivility and Geng Gao.
Meanwhile, bottom and top metal plate make module possess two-side radiation ability, improve heat conductivility and power density.The present invention is highly suitable for High-performance power electronic installation and system, such as matrix converter, has a good application prospect.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the two-way controllable switch module being made up of reverse blocking IGBT device；
Fig. 2 is the schematic diagram of the two-way IGBT module of single-chip；
Fig. 3 is the right side view of tradition reverse blocking IGBT device；
Fig. 4 is the top view of tradition reverse blocking IGBT device；
Fig. 5 is the upward view of tradition reverse blocking IGBT device；
Fig. 6 is the right side view of the two-way IGBT device of single-chip；
Fig. 7 is the top view of the two-way IGBT device of single-chip；
Fig. 8 is the upward view of the two-way IGBT device of single-chip；
Fig. 9 is the decomposing schematic representation of the encapsulating structure of the two-way IGBT module of single-chip of the embodiment of the present invention；
Figure 10 is the partial enlarged drawing of the individual devices welding of the embodiment of the present invention；
Figure 11 is the schematic three dimensional views that the two-way IGBT module of single-chip of the embodiment of the present invention has encapsulated rear profile；
Wherein, G: gate pole；E: emitter stage: C: colelctor electrode；G1: the first gate pole；G2: the second gate pole；E1: the first emitter stage: the E2: the second emitter stage；JG1: the first gate lead；JE1: the first emitter stage pin；JG2: the second gate lead；JE2: the second emitter stage pin；1: the two-way IGBT device of single-chip；2: bottom metal；3: bottom Direct Bonding copper coin；3a: the second emitter stage lying copper region；3b: the second gate pole lying copper region；4: top Direct Bonding copper coin；4a: the first emitter stage lying copper region；4b: the first gate pole lying copper region；5: top metal plate；6: insulating cell；7: pin openings；8: insulation crust.
Detailed description of the invention
Below in conjunction with drawings and Examples, embodiments of the present invention are described in further detail.Following example are used for illustrating the present invention, but can not be used for limiting the scope of the present invention.
In describing the invention, it is necessary to explanation, except as otherwise noted, " multiple " are meant that two or more；Term " on ", D score, "left", "right", " interior ", " outward ", " front end ", " rear end ", " head ", the orientation of the instruction such as " afterbody " or position relationship be based on orientation shown in the drawings or position relationship, it is for only for ease of the description present invention and simplifies description, rather than instruction or hint indication device or element must have specific orientation, with specific azimuth configuration and operation, be therefore not considered as limiting the invention.Additionally, term " first ", " second ", " the 3rd " etc. are only for descriptive purposes, and it is not intended that indicate or hint relative importance.
In describing the invention, in addition it is also necessary to explanation, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection " should be interpreted broadly, for instance, it is possible to it is fixing connection, it is also possible to be removably connect, or connect integratedly；Can be mechanically connected, it is also possible to be electrical connection；Can be joined directly together, it is also possible to be indirectly connected to by intermediary.For the ordinary skill in the art, visual concrete condition understands above-mentioned term concrete meaning in the present invention.
As shown in figs. 9-11, the encapsulating structure of the two-way IGBT module of a kind of single-chip that the present embodiment provides, it includes the bottom metal 2, bottom DBC plate 3, the two-way IGBT device 1 of several single-chips, top DBC plate 4 and the top metal plate 5 that set gradually from bottom to top；Bottom DBC plate 3 includes the second gate pole lying copper region 3b and the second emitter stage lying copper region 3a；Second gate pole and second emitter stage of the two-way IGBT device 1 of single-chip are connected with the second gate pole lying copper region 3b and the second emitter stage lying copper region 3a respectively；Top DBC plate 4 includes the first gate pole lying copper region 4b and the first emitter stage lying copper region 4a；First gate pole G1 of the two-way IGBT device 1 of single-chip and the first emitter E 1 are welded to connect with the first gate pole lying copper region 4b and the first emitter stage lying copper region 4a respectively；It is provided with insulating cell 6 between bottom metal 2 and top metal plate 5, is connected by insulating cell 6, bottom metal and the insulation of top metal plate.Insulating cell 6 plays the effect supporting two pieces of metallic plates, it is to avoid when module is installed, pressure experienced causes metallic plate and the excessive deformation of DBC plate, and then causes that the device being welded on DBC plate is impaired；Bottom metal, top metal plate and insulating cell are provided with installation through hole, the installation through hole perpendicular alignmnet of three, it is simple to the installation of the fixing and heat-transfer device of the two-way IGBT module of single-chip.Gate pole lying copper region and emitter stage lying copper region are completely covered and are close to the gate pole district of the two-way IGBT device of described single-chip respectively and emitter region is arranged, and top DBC plate 4 is close to and is arranged on top metal plate 5；Bottom DBC plate 3 is close to and is arranged in bottom metal 2, it is simple to device outwards transmits heat successively.
Top metal plate 5 and bottom metal 2 have enough thickness and mechanical strength, meet top metal plate upper surface and the bottom metal lower surface demand as module mechanical erection face, and two mechanical erection faces are again as the thermally-conductive interface of module simultaneously.
First gate pole external pin JG1 of the two-way IGBT device 1 of single-chip, the first emitter stage external pin JE1, the second gate pole external pin JG2 and the second emitter stage external pin JE2 are respectively welded on the first gate pole lying copper region 4b, the first emitter stage lying copper region 4a, the second gate pole lying copper region 3b and the second emitter stage lying copper region 3a.Emitter stage external pin is divided into again main circuit pin and drive circuit pin.That is, the first emitter stage external pin JE1 includes the first emitter stage main circuit pin JE10 and the first emitter stage drive circuit pin JE11；Second emitter stage external pin JE2 includes the second emitter stage main circuit pin JE20 and the second emitter stage drive circuit pin JE21 respectively.
Wherein, the two-way IGBT device 1 of several single-chips is arranged in parallel by the first gate pole lying copper region, the first emitter stage lying copper region, the second gate pole lying copper region and the second emitter stage lying copper region.
Bottom metal 2, bottom DBC plate 3, top metal plate 5 and top DBC plate 4 are provided with pin openings 7, each gate pole and emitter stage external pin stretch out from pin openings 7.
It is circumferentially provided with sealed insulation shell 8 between bottom metal 2 and top metal plate 5 and along bottom DBC plate 3, the two-way IGBT device 1 of single-chip and top DBC plate 4；The upper surface of the lower surface of bottom metal 2 and top metal plate 5 exposes.
Sealed insulation shell 8 makes top metal plate, bottom metal and external pin constitute an entirety, and two-way to bonding copper coin and single-chip IGBT device is sealed in inside, plays the effect of protection device and electric insulation.
The two-way IGBT module of present invention encapsulation can be widely applied to matrix converter, wherein, matrix converter is a kind of novel AC-AC supply convertor, have need not DC energy storage link, can the remarkable advantage such as four quadrant running, it is one of the focus of Power Electronic Technique research, and has a wide range of applications.Power device is proposed the two-way gate-controlled switch of new requirement by matrix converter.A two antiparallel tradition reverse blocking IGBT devices or two-way IGBT device of single-chip all can meet this requirement.
Such as: for a three-phase-three-phase matrix converter, the IGBT device that this device need to select nominal parameter to be 1200V/25A.Tradition reverse blocking IGBT element manufacturing changer is adopted to need the device of 18 corresponding nominal parameters；Have benefited from the two-way controllable characteristics of the two-way IGBT device of single-chip, adopt this element manufacturing changer only to need the device of 9 corresponding nominal parameters.The quantity demand of the two-way IGBT device of single-chip is only the half of tradition reverse blocking IGBT device.
According to the mode adopting 18 traditional reverse blocking IGBT element manufacturing three-phase-three-phase matrix converter modules, adopt the encapsulating structure of the two-way IGBT module of single-chip provided by the invention, 9 required two-way IGBT device of single-chip are encapsulated in a module, constitute three-phase-three-phase matrix converter module.Contrast two kinds of modules: the own characteristic of the two-way IGBT device of single-chip determines module, and the demand of number of devices is less, and the volume of packaged module is also less；Meanwhile, encapsulating structure provided by the invention has two-side radiation ability, thus having expanded the heat conductivility of module further, improves the power density of module.Thus it is not difficult to find out, adopts the matrix converter module that the two-way IGBT device of encapsulating structure provided by the invention and single-chip is produced compared with traditional matrix converter module, power density with the obvious advantage.
Embodiments of the invention provide for example with for the purpose of describing, and are not exhaustively or limit the invention to disclosed form.Many modifications and variations are apparent from for the ordinary skill in the art.Selecting and describing embodiment is in order to principles of the invention and practical application are better described, and makes those of ordinary skill in the art it will be appreciated that the present invention is thus design is suitable to the various embodiments with various amendments of special-purpose.
Claims (8)
1. the encapsulating structure of the two-way IGBT module of single-chip, it is characterised in that it includes the bottom metal, bottom Direct Bonding copper coin, the two-way IGBT device of single-chip, top Direct Bonding copper coin and the top metal plate that set gradually from bottom to top；Bottom Direct Bonding copper coin end face is provided with the second gate pole lying copper region and the second emitter stage lying copper region；Second gate pole of the two-way IGBT device of single-chip and the second emitter stage are connected with the second gate pole lying copper region and the second emitter stage lying copper region respectively；Direct Bonding copper coin bottom surface, top is provided with the first gate pole lying copper region and the first emitter stage lying copper region；First gate pole of the two-way IGBT device of single-chip and the first emitter stage are connected with the first gate pole lying copper region and the first emitter stage lying copper region respectively；First gate pole external pin of the two-way IGBT device of single-chip, the first emitter stage external pin, the second gate pole external pin and the second emitter stage external pin are connected with the first gate pole lying copper region, the first emitter stage lying copper region, the second gate pole lying copper region and the second emitter stage lying copper region respectively.
2. the encapsulating structure of the two-way IGBT module of single-chip according to claim 1, it is characterised in that described gate pole lying copper region and emitter stage lying copper region are completely covered respectively and are close to gate pole district and the emitter region setting of the two-way IGBT device of described single-chip.
3. the encapsulating structure of the two-way IGBT module of single-chip according to claim 1, it is characterised in that described top Direct Bonding copper coin is close to and is arranged on described top metal plate；Described bottom Direct Bonding copper coin is close to and is arranged in described bottom metal.
4. the encapsulating structure of the two-way IGBT module of single-chip according to claim 1, it is characterized in that, the encapsulating structure of the two-way IGBT module of described single-chip includes several two-way IGBT device of described single-chip, and the two-way IGBT device of several single-chips is arranged in parallel by described first gate pole lying copper region, the first emitter stage lying copper region, the second gate pole lying copper region and the second emitter stage lying copper region.
5. the encapsulating structure of the two-way IGBT module of single-chip according to claim 1, it is characterised in that be provided with the liner for supporting between described bottom metal and top metal plate.
6. the encapsulating structure of the two-way IGBT module of single-chip according to claim 1, it is characterized in that, being provided with pin openings on described bottom metal, bottom Direct Bonding copper coin, top metal plate and top Direct Bonding copper coin, described external pin stretches out from pin openings.
7. the encapsulating structure of the two-way IGBT module of single-chip according to claim 1, it is characterized in that, be circumferentially provided with sealed insulation shell between described bottom metal and top metal plate and along bottom Direct Bonding copper coin, the two-way IGBT device of single-chip and top Direct Bonding copper coin；The upper surface of the lower surface of bottom metal and top metal plate exposes.
8. the encapsulating structure of the two-way IGBT module of single-chip according to claim 1, it is characterised in that described first emitter stage external pin includes the first emitter stage main circuit pin and the first emitter stage drive circuit pin；Described second emitter stage external pin includes the second emitter stage main circuit pin and the second emitter stage drive circuit pin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610294630.3A CN105789293A (en) | 2016-05-05 | 2016-05-05 | Packaging structure of single-chip bidirectional IGBT module |
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| CN201610294630.3A CN105789293A (en) | 2016-05-05 | 2016-05-05 | Packaging structure of single-chip bidirectional IGBT module |
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| CN105789293A true CN105789293A (en) | 2016-07-20 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109755305A (en) * | 2017-11-02 | 2019-05-14 | 华润微电子（重庆）有限公司 | A kind of IGBT conjunction Feng Danguan |
| CN110634817A (en) * | 2019-09-25 | 2019-12-31 | 湖南大学 | Packaging structure of hybrid power module composed of IGBT and MOSFET |
| EP4002442A1 (en) * | 2020-11-11 | 2022-05-25 | Infineon Technologies Austria AG | Semiconductor device with vertical bidirectional switch |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1333566A (en) * | 2000-07-11 | 2002-01-30 | 株式会社东芝 | Semiconductor device |
-
2016
- 2016-05-05 CN CN201610294630.3A patent/CN105789293A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1333566A (en) * | 2000-07-11 | 2002-01-30 | 株式会社东芝 | Semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109755305A (en) * | 2017-11-02 | 2019-05-14 | 华润微电子（重庆）有限公司 | A kind of IGBT conjunction Feng Danguan |
| CN110634817A (en) * | 2019-09-25 | 2019-12-31 | 湖南大学 | Packaging structure of hybrid power module composed of IGBT and MOSFET |
| CN110634817B (en) * | 2019-09-25 | 2023-04-18 | 湖南大学 | Packaging structure of hybrid power module composed of IGBT and MOSFET |
| EP4002442A1 (en) * | 2020-11-11 | 2022-05-25 | Infineon Technologies Austria AG | Semiconductor device with vertical bidirectional switch |
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