CN102768997A

CN102768997A - High-power complete wafer IGBT (insulated gate bipolar translator) ceramic package housing

Info

Publication number: CN102768997A
Application number: CN2012102635378A
Authority: CN
Inventors: 陈国贤; 徐宏伟; 陈蓓璐
Original assignee: JIANGYIN SAIYING ELECTRON CO Ltd
Current assignee: JIANGYIN SAIYING ELECTRON CO Ltd
Priority date: 2012-07-28
Filing date: 2012-07-28
Publication date: 2012-11-07

Abstract

The invention relates to a high-power complete wafer IGBT (insulated gate bipolar translator) ceramic package housing, which is characterized by comprising a ceramic base (1), a transition electrode (2) and an upper cover (3), wherein the upper cover (3) is arranged above the ceramic base (1); the transition electrode (2) is arranged on a positive electrode (1-4); and a gate electrode needle locating hole (2-1), a gate electrode ring locating groove (2-2) and a chip locating hole (2-3) are formed in the transition electrode (2). According to the high-power complete wafer IGBT ceramic package housing, a rectangular electrode group does not need to be carved, and only simple locating holes and locating grooves need to be formed in the transition electrode, so that the processing efficiency is greatly improved and the finished product rate is greatly increased; and the transition electrode does not need to be welded with a ceramic ring, so that the welding stress cannot be generated. Compared with the rectangular electrode group, the contact area is increased by about 20%, so that the electricity and heat conduction performance of the electrodes are improved.

Description

High-power whole wafer IGBT ceramic packaging shell

Technical field

The present invention relates to a kind of ceramic packaging shell ,Be particularly related to a kind of high-power whole wafer IGBT ceramic packaging shell.Belong to the power semiconductor device technical field.

Background technology

Igbt---IGBT; Continuous expansion along with application; Obtained fast development in recent years; Become the main product of current power electronic device, the above high-power IGBT of kilo-ampere level has become the first-selection in great power conversion circuit fields such as HVDC Light, track traffic, new forms of energy.

IGBT often is packaged into two kinds of structures, and a kind of is the plastic module structure that adopts chips welding and lead-in wire ultrasonic bonding, and the advantage of this structure is that technology is simple, and shortcoming is to realize single face heat radiation, reliability variation under the high-voltage great-current condition.Another kind is the ceramic module that adopts dull and stereotyped compression joint type encapsulation; The advantage of this structure is two-sidedly to dispel the heat; It is tired to have removed sweating heat, has improved reliability, uses in high-power field to have a clear superiority in; Shortcoming is that each parts must have good consistency, therefore to technology require high.

Igbt chip often is made into independently square blade unit, and concerning ceramic module, the rectangular electrode crowd that need on the shell electrode, carve some protrusions encapsulates each chip unit.To eliminate the mechanical stress of electrode group, the influence of many factors such as welding high temperature deformation etc. fully; Guarantee that entire electrode crowd surface has very high evenness; Thereby satisfy the requirement of igbt chip compression joint type encapsulation, this will propose test to technology controlling and process, the rate of finished products that ceramic package is produced.

Along with the raising of igbt chip manufacturing technology, succeeded in developing at present a kind of on a whole chip wafer a plurality of independently IGBT of etching device cell, correspondingly need a kind of novel encapsulated shell to realize the encapsulation of whole wafer IGBT.

Summary of the invention

The objective of the invention is to overcome above-mentioned deficiency, a kind of novel ceramic shell that is fit to whole wafer IGBT encapsulation is provided, the gate pole that can realize all chip units of IGBT connects and draws.

The objective of the invention is to realize like this: a kind of high-power whole wafer IGBT ceramic packaging shell; It comprises ceramic base, transition electrode and loam cake; Said ceramic base comprises anode flange, porcelain ring and the anode seal circle of superimposed concentric welding from top to bottom, in said anode seal circle, is welded with anode electrode with one heart, and cross-under has the gate lead pipe on the shell wall of said porcelain ring; Be welded with in the gate pole inserted sheet outside the inserted sheet and gate pole respectively at the inside and outside end of said gate lead pipe; Said loam cake lid places on the ceramic base, and loam cake includes cathode electrode and cathode flange, and said cathode flange is welded on the outer rim of cathode electrode with one heart; Said transition electrode places on the anode electrode, and said transition electrode is provided with gate pole pin location hole, gate pole loop mapping groove and chip location hole.

Compared with prior art, the invention has the beneficial effects as follows:

The present invention need not carve the rectangular electrode crowd; Only need simple location hole of processing and location notch on transition electrode, significantly improved working (machining) efficiency and rate of finished products, and transition electrode does not need to weld mutually with the porcelain ring; Therefore there is not welding stress; With rectangular electrode faciation ratio, contact area has increased about 20%, thereby has improved conduction, the heat conductivility of electrode.

Description of drawings

Fig. 1 is a structural representation of the present invention.

Fig. 2 is the structural representation of transition electrode of the present invention.

Wherein:

Ceramic base 1

Transition electrode 2

Loam cake 3

Anode flange 1-1

Porcelain ring 1-2

Anode seal circle 1-3

Anode electrode 1-4

Gate lead pipe 1-5

The outer inserted sheet 1-6 of gate pole

Inserted sheet 1-7 in the gate pole

Gate pole pin location hole 2-1

Gate pole loop mapping groove 2-2

Chip location hole 2-3

Cathode electrode 3-1

Cathode flange 3-2.

Embodiment

Referring to Fig. 1; The present invention relates to a kind of high-power whole wafer IGBT ceramic packaging shell; Mainly form by ceramic base 1, transition electrode 2 and loam cake 3; Wherein ceramic base 1 includes inserted sheet 1-7 in anode flange 1-1, porcelain ring 1-2, anode seal circle 1-3, anode electrode 1-4, gate lead pipe 1-5, the outer inserted sheet 1-6 of gate pole and the gate pole; Anode seal circle 1-3 is welded on the lower surface of porcelain ring 1-2, and anode flange 1-1 is welded on the upper surface of porcelain ring 1-2, said anode flange 1-1, porcelain ring 1-2 and the superimposed from top to bottom concentric welding of anode seal circle 1-3; Said anode electrode 1-4 is welded among the anode seal circle 1-3 with one heart; Gate lead pipe 1-5 is connected on the porcelain ring 1-2 shell wall, inserted sheet 1-7 gate lead pipe 1-5 one end vertical weld interior in the gate pole with being in porcelain ring 1-2, and the outer inserted sheet 1-6 horizontal welding of gate pole is connected to outer gate lead pipe 1-5 one end of porcelain ring 1-2; Said loam cake 3 lids place on the ceramic base 1, and loam cake 3 includes cathode electrode 3-1 and cathode flange 3-2, and said cathode flange 3-2 is welded on the outer rim of cathode electrode 3-1 with one heart; Said transition electrode 2 places on the anode electrode 1-4; Said transition electrode 2 is provided with gate pole pin location hole 2-1, gate pole loop mapping groove 2-2 and chip location hole 2-3, and wherein the chip that encapsulates as required of gate pole pin location hole 2-1 and gate pole loop mapping groove 2-2 designs.

Through the design of the outer inserted sheet 1-6 of inserted sheet 1-7, gate lead pipe 1-5 and gate pole in gate pole pin location hole 2-1, gate pole loop mapping groove 2-2, the gate pole, can realize putting in order the connection of wafer igbt chip gate pole and drawing.

Claims

1. high-power whole wafer IGBT ceramic packaging shell; It is characterized in that it comprises ceramic base (1), transition electrode (2) and loam cake (3); Said ceramic base (1) comprises anode flange (1-1), porcelain ring (1-2) and the anode seal circle (1-3) of superimposed concentric welding from top to bottom; In said anode seal circle (1-3), be welded with anode electrode (1-4) with one heart; Cross-under has gate lead pipe (1-5) on the shell wall of said porcelain ring (1-2), is welded with inserted sheet (1-6) outside inserted sheet in the gate pole (1-7) and the gate pole respectively at the inside and outside end of said gate lead pipe (1-5), and said loam cake (3) lid places on the ceramic base (1); Loam cake (3) includes cathode electrode (3-1) and cathode flange (3-2), and said cathode flange (3-2) is welded on the outer rim of cathode electrode (3-1) with one heart; Said transition electrode (2) places on the anode electrode (1-4), and said transition electrode (2) is provided with gate pole pin location hole (2-1), gate pole loop mapping groove (2-2) and chip location hole (2-3).