CN105355605A - Large power total-pressure-contact IGBT multi-die holder ceramic tube housing - Google Patents
Large power total-pressure-contact IGBT multi-die holder ceramic tube housing Download PDFInfo
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- CN105355605A CN105355605A CN201510834108.5A CN201510834108A CN105355605A CN 105355605 A CN105355605 A CN 105355605A CN 201510834108 A CN201510834108 A CN 201510834108A CN 105355605 A CN105355605 A CN 105355605A
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- gate pole
- ceramic ring
- anode
- inserted sheet
- electrode
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- 239000000919 ceramic Substances 0.000 title claims abstract description 61
- 230000006835 compression Effects 0.000 claims description 20
- 238000007906 compression Methods 0.000 claims description 20
- 229910052573 porcelain Inorganic materials 0.000 claims description 9
- 230000006978 adaptation Effects 0.000 abstract 1
- 230000037431 insertion Effects 0.000 abstract 1
- 238000003780 insertion Methods 0.000 abstract 1
- 230000004308 accommodation Effects 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
Abstract
The invention relates to a large power total-pressure-contact IGBT multi-die holder ceramic tube housing. The large power total-pressure-contact IGBT multi-die holder ceramic tube housing comprises a tube socket and a tube cover which is in matched junction with the tube socket, wherein the tube socket includes a rectangular anode electrode; the outer edge of the anode electrode is encapsulated with an anode proving ring; a ceramic ring is arranged on the anode proving ring; a gate pole assembly is arranged at the lower part of the ceramic ring; the gate pole assembly includes an inner conducting strip and a conductive connector; the inner conducting strip is arranged in the ceramic ring; the conductive connector includes a gate pole rod and a gate pole branch tube; the gate pole rod penetrates through the ceramic ring from one end, in the ceramic ring, of the gate pole branch tube; the other end of the gate pole branch tube is provided with a gate pole bulkhead which is used for encapsulating the gate pole branch tube; the gate pole bulkhead is arranged outside the ceramic ring; and the gate pole bulkhead fixes a gate pole insertion plate at the end, at the outside of the ceramic ring, of the gate pole branch tube. The large power total-pressure-contact IGBT multi-die holder ceramic tube housing is compact in structure, and can effectively improve the unit area power of a high pressure contact IGBT device, and can improve the adaptation range for the high pressure contact IGBT device, and is safe and reliable.
Description
Technical field
The present invention relates to a kind of encapsulating package, especially a kind of high-power full compression joint type IGBT multi-mode rack porcelain tube shell, belong to the technical field of IGBT device encapsulation.
Background technology
IGBT(insulated gate bipolar transistor) by BJT(double pole triode) and MOS(insulating gate type field effect tube) the compound full-control type voltage driven type power semiconductor that forms, have the advantage of the high input impedance of MOSFET and low conduction voltage drop two aspect of GTR concurrently, it is widely used in industry, 4C(communication, computer, consumer electronics, automotive electronics), the emerging strategic industries field such as conventional industries field and track traffic, new forms of energy, intelligent grid, new-energy automobile such as Aero-Space, defence and military.IGBT is adopted to carry out power conversion, power consumption efficiency and quality can be improved, there is energy-efficient and feature that is environmental protection, be the critical support technology solving energy shortage problem and reduce carbon emission, be therefore called as " CPU " of power unsteady flow product, " core of green economy ".
IGBT module can be divided into welded type and compression joint type two class by packaging technology.Welded type refers to chip by bonding wire, layer, busbar electrode by being welded to connect, and plastic packaging, it is owing to adopting one side heat radiation, and power raising is restricted.Compression joint type is the direct pressure contact that similar total head connects thyristor type, requires high to the accuracy of manufacture of shell electrode, chip thickness and pressure uniformity.Compression joint type feature has without layer, the feature exempting from wire bonding, two-side radiation and inefficacy short circuit.
Compression joint type IGBT outside adopts ceramic cartridge encapsulation, the sub-module group unit of the much independence of inner employing, arrange with mode according to a specific ratio, every chip block is all arranged on oneself independently in plastic frame, and contacted with collector and emitter direct pressure respectively by upper and lower molybdenum sheet and connect, grid is connected by the spring needle be arranged in plastic frame.As can be seen here, the plane of the upper each side of the copper electrode (emitter) in base blade unit composition must have very high evenness and this plane and the outer table top of base must ensure the higher depth of parallelism.
In summary, hold blockage number of chips in certain area more, power is higher, also the requirement of more applicable power device miniaturization.How to improve the unit are power of existing compression joint type IGBT, will the direction optimized further be become.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, there is provided a kind of high-power full compression joint type IGBT multi-mode rack porcelain tube shell, its compact conformation, effectively can improve the unit are power of compression joint type IGBT device, improve the wide accommodation of compression joint type IGBT device, safe and reliable.
According to technical scheme provided by the invention, described high-power full compression joint type IGBT multi-mode rack porcelain tube shell, comprises base and to be positioned on base and to mate with described base the pipe lid be connected; Described base comprises the anode electrode of rectangular shape, is sealed with the anode stress loop of coaxial distribution, described anode stress loop is provided with ceramic ring in the outer rim of described anode electrode, and described ceramic ring and anode electrode are in coaxial distribution;
The gate pole assembly for being drawn by the gate pole of IGBT device on anode electrode is provided with in the bottom of described ceramic ring, described gate pole assembly comprises the conducting strip being positioned at ceramic ring and the conduction connector running through described ceramic ring, the gate pole sleeve pipe that described conduction connector comprises the gate pole bar for being electrically connected with interior conducting strip and allows described gate pole bar to set, one end that described gate pole bar is positioned at ceramic ring from gate pole sleeve pipe penetrates, the other end of gate pole sleeve pipe is provided with the gate pole plug for shutoff gate pole sleeve pipe, described gate pole plug is positioned at outside ceramic ring, and gate pole inserted sheet is fixed on gate pole sleeve pipe by gate pole plug is positioned at end outside ceramic ring.
Described interior conducting strip is in vertically distribution in ceramic ring, and the below of gate pole inserted sheet is provided with stress loop inserted sheet, and described stress loop inserted sheet is fixedly connected with anode stress loop, and stress loop inserted sheet and gate pole blade contact.
Described ceramic ring is provided with anode flange, and the outer wall of ceramic ring is provided with some circle bulge loops.
Described pipe lid comprise rectangular shape cathode electrode and with one heart sealing-in at the cathode flange of described cathode electrode outer rim.
Described cathode electrode is provided with negative electrode location hole, described anode electrode is provided with described negative electrode location hole in the coaxial anode location hole distributed.
Advantage of the present invention: all rectangular shape of anode electrode, cathode electrode, and gate pole assembly is set in the bottom of ceramic ring, thus can effectively improve the quantity of anode electrode being installed IGBT device, the unit are power of effective raising compression joint type IGBT device, improve accommodation, compact conformation, safe and reliable.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is the vertical view of Fig. 1.
Description of reference numerals: conducting strip, 2.6-gate pole plug, 2.7-gate pole inserted sheet, 2.8-gate pole sleeve pipe, 2.9-gate pole bar, 2.10-stress loop inserted sheet, 2.11-anode location hole, 2.12-ceramic ring cased perforated, 2.13-anode electrode and 2.14-bulge loop in 1-pipe lid, 1.1-cathode flange, 1.2-cathode electrode, 1.3-negative electrode location hole, 2-base, 2.1-anode flange, 2.2-ceramic ring, 2.3-anode electrode locating piece, 2.4-anode stress loop, 2.5-.
Embodiment
Below in conjunction with concrete drawings and Examples, the invention will be further described.
As depicted in figs. 1 and 2: in order to the unit are power of compression joint type IGBT device effectively can be improved, improve the wide accommodation of compression joint type IGBT device, the present invention includes base 2 and to be positioned on base 2 and to mate with described base 2 the pipe lid 1 be connected; Described base 2 comprises the anode electrode 2.13 of rectangular shape, the anode stress loop 2.4 of coaxial distribution is sealed with in the outer rim of described anode electrode 2.13, described anode stress loop 2.4 is provided with ceramic ring 2.2, and described ceramic ring 2.2 and anode electrode 2.13 are in coaxial distribution;
The gate pole assembly for being drawn by the gate pole of IGBT device on anode electrode 2.13 is provided with in the bottom of described ceramic ring 2.2, described gate pole assembly comprises the conducting strip 2.5 being positioned at ceramic ring 2.2 and the conduction connector running through described ceramic ring 2.2, the gate pole sleeve pipe 2.8 that described conduction connector comprises the gate pole bar 2.9 for being electrically connected with interior conducting strip 2.5 and allows described gate pole bar 2.9 to set, one end that described gate pole bar 2.9 is positioned at ceramic ring 2.2 from gate pole sleeve pipe 2.8 penetrates, the other end of gate pole sleeve pipe 2.8 is provided with the gate pole plug 2.6 for shutoff gate pole sleeve pipe 2.8, described gate pole plug 2.6 is positioned at outside ceramic ring 2.2, and gate pole inserted sheet 2.7 is fixed on gate pole sleeve pipe 2.8 by gate pole plug 2.6 is positioned at end outside ceramic ring 2.2.
Particularly, anode electrode 2.13 adopts copper electrode, anode electrode 2.13 is provided with some anode electrode locating pieces 2.3, the location and installation of the IGBT device needed for being realized by described anode electrode locating piece 2.3, anode electrode locating piece 2.3 is the arrangement in array-like on anode electrode 2.13, the rectangular shape of anode electrode 2.13, thus the arrangement density that can expand anode electrode locating piece 2.3, effectively can improve unit are power anode electrode 2.13 encapsulating IGBT device.Anode stress loop 2.4 is positioned at the outer rim of anode electrode 2.13, and with described anode electrode 2.13 in coaxial distribution, ceramic ring 2.2 is positioned in anode stress loop 2.4, in order to suitable with anode electrode 2.13, described ceramic ring 2.2 is also rectangular, and the width of ceramic ring 2.2 is greater than the width of anode electrode 2.13.
Be provided with ceramic ring cased perforated 2.12 in the bottom of ceramic ring 2.2 side, the sidewall of the through ceramic ring 2.2 of described ceramic ring cased perforated 2.12, gate pole sleeve pipe 2.8 is embedded in described ceramic ring cased perforated 2.12 in horizontal shape.Interior conducting strip 2.5 distributes in vertical in ceramic ring 2.2, the bottom of interior conducting strip 2.5 is connected with gate pole bar 2.9, one end of gate pole bar 2.9 penetrates in gate pole sleeve pipe 2.8, and the other end of gate pole bar 2.9 is by the end close contact of interior conducting strip 2.5 with gate pole sleeve pipe 2.8.In order to ensure the seal in base 2, be provided with gate pole plug 2.6 outside ceramic ring 2.2, one end of gate pole plug 2.6 can penetrate in gate pole sleeve pipe 2.8, and the other end of gate pole plug 2.6 can by the end close contact of gate pole inserted sheet 2.7 with gate pole sleeve pipe 2.8.During concrete enforcement, interior conducting strip 2.5 is welded with gate pole bar 2.9, gate pole sleeve pipe 2.8 by solder, gate pole plug 2.6, gate pole inserted sheet 2.7 are also welded and fixed with gate pole sleeve pipe 2.8, interior conducting strip 2.5 is electrically connected to each other with gate pole plug 2.6, gate pole inserted sheet 2.7, gate pole sleeve pipe 2.8 and gate pole bar 2.9, thus the gate pole assembly needed for being formed.
Further, the below of gate pole inserted sheet 2.7 is provided with stress loop inserted sheet 2.10, and described stress loop inserted sheet 2.10 is fixedly connected with anode stress loop 2.4, and stress loop inserted sheet 2.10 contacts with gate pole inserted sheet 2.7.
Described ceramic ring 2.2 is provided with anode flange 2.1, and the outer wall of ceramic ring 2.2 is provided with some circle bulge loops 2.14.
In the embodiment of the present invention, stress loop inserted sheet 2.10 is in L-type, and stress loop inserted sheet 2.10 is fixed with anode stress loop 2.4, and contacts with gate pole inserted sheet 2.7, and gate pole inserted sheet 2.7 is also in L-type.Anode flange 2.1 is positioned at the top of ceramic ring 2.2, can increase creepage distance by arranging bulge loop 2.14 on the outer wall of ceramic ring 2.2.
Described pipe lid 1 comprise rectangular shape cathode electrode 1.2 and with one heart sealing-in at the cathode flange 1.1 of described cathode electrode 1.2 outer rim.
In the embodiment of the present invention, in order to suitable with anode electrode 2.13, cathode electrode 1.2 is also rectangular, cathode flange 1.1 sealing-in is in the outer rim of anode flange 1.2, cathode electrode 1.2 is contacted with anode flange 2.1 by cathode flange 1.1, now, the bottom of cathode electrode 1.2 can be embedded in ceramic ring 2.2.During concrete enforcement, described cathode electrode 1.2 is provided with negative electrode location hole 1.3, described anode electrode 2.13 is provided with described negative electrode location hole 1.3 in the coaxial anode location hole 2.11 distributed.Cathode electrode 1.2 is arranged two negative electrode location holes 1.3, negative electrode location hole 1.3 is positioned at the upper surface of cathode electrode 1.2, anode electrode 2.13 is also arranged two anode location holes 2.11, described anode location hole 2.11 is positioned at the lower surface of anode electrode 2.13, the two anode location holes 2.11 negative electrode location hole corresponding to top 1.3 is in coaxial distribution, thus effective location when can realize encapsulation.
The all rectangular shape of anode electrode 2.13 of the present invention, cathode electrode 1.2, and gate pole assembly is set in the bottom of ceramic ring 2.2, thus can effectively improve the quantity of anode electrode 2.13 being installed IGBT device, the unit are power of effective raising compression joint type IGBT device, improve accommodation, compact conformation, safe and reliable.
Claims (5)
1. a high-power full compression joint type IGBT multi-mode rack porcelain tube shell, comprises base (2) and is positioned at base (2) and go up and mate with described base (2) the pipe lid (1) be connected; It is characterized in that: described base (2) comprises the anode electrode (2.13) of rectangular shape, the anode stress loop (2.4) of coaxial distribution is sealed with in the outer rim of described anode electrode (2.13), described anode stress loop (2.4) is provided with ceramic ring (2.2), and described ceramic ring (2.2) and anode electrode (2.13) are in coaxial distribution;
The gate pole assembly for being drawn by the gate pole of upper for anode electrode (2.13) IGBT device is provided with in the bottom of described ceramic ring (2.2), described gate pole assembly comprises the conducting strip (2.5) being positioned at ceramic ring (2.2) and the conduction connector running through described ceramic ring (2.2), the gate pole sleeve pipe (2.8) that described conduction connector comprises the gate pole bar (2.9) for being electrically connected with interior conducting strip (2.5) and allows described gate pole bar (2.9) to set, one end that described gate pole bar (2.9) is positioned at ceramic ring (2.2) from gate pole sleeve pipe (2.8) penetrates, the other end of gate pole sleeve pipe (2.8) is provided with the gate pole plug (2.6) for shutoff gate pole sleeve pipe (2.8), described gate pole plug (2.6) is positioned at ceramic ring (2.2) outward, and gate pole inserted sheet (2.7) is fixed on gate pole sleeve pipe (2.8) by gate pole plug (2.6) is positioned at ceramic ring (2.2) end outward.
2. high-power full compression joint type IGBT multi-mode rack porcelain tube shell according to claim 1, it is characterized in that: described interior conducting strip (2.5) distributes in vertical in ceramic ring (2.2), the below of gate pole inserted sheet (2.7) is provided with stress loop inserted sheet (2.10), described stress loop inserted sheet (2.10) is fixedly connected with anode stress loop (2.4), and stress loop inserted sheet (2.10) contacts with gate pole inserted sheet (2.7).
3. high-power full compression joint type IGBT multi-mode rack porcelain tube shell according to claim 1, is characterized in that: described ceramic ring (2.2) is provided with anode flange (2.1), and the outer wall of ceramic ring (2.2) is provided with some circle bulge loops (2.14).
4. high-power full compression joint type IGBT multi-mode rack porcelain tube shell according to claim 1, is characterized in that: described pipe lid (1) comprise rectangular shape cathode electrode (1.2) and with one heart sealing-in at the cathode flange (1.1) of described cathode electrode (1.2) outer rim.
5. high-power full compression joint type IGBT multi-mode rack porcelain tube shell according to claim 4, it is characterized in that: described cathode electrode (1.2) is provided with negative electrode location hole (1.3), described anode electrode (2.13) is provided with described negative electrode location hole (1.3) in the coaxial anode location hole (2.11) distributed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510834108.5A CN105355605A (en) | 2015-11-26 | 2015-11-26 | Large power total-pressure-contact IGBT multi-die holder ceramic tube housing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510834108.5A CN105355605A (en) | 2015-11-26 | 2015-11-26 | Large power total-pressure-contact IGBT multi-die holder ceramic tube housing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105355605A true CN105355605A (en) | 2016-02-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510834108.5A Pending CN105355605A (en) | 2015-11-26 | 2015-11-26 | Large power total-pressure-contact IGBT multi-die holder ceramic tube housing |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106332500A (en) * | 2016-09-30 | 2017-01-11 | 中国东方电气集团有限公司 | Crimping device based single-phase half-bridge power module |
| CN106783749A (en) * | 2016-12-15 | 2017-05-31 | 江阴市赛英电子股份有限公司 | A kind of super large-scale ceramic package structure |
| CN107768314A (en) * | 2017-10-21 | 2018-03-06 | 江阴市赛英电子股份有限公司 | A kind of flat board elastic compression joint encapsulation IGBT ceramic cartridges and preparation method |
| CN110047805A (en) * | 2019-04-30 | 2019-07-23 | 无锡天杨电子有限公司 | A kind of IGBT ceramic cartridge stress self-adaptive regulating structure |
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| CN101266952A (en) * | 2008-03-12 | 2008-09-17 | 江阴市赛英电子有限公司 | Novel full-press high-power IGBT multi-mode rack porcelain tube shell |
| CN201146179Y (en) * | 2008-06-13 | 2008-11-05 | 江阴市赛英电子有限公司 | Complete-crimp-connection rapid heat radiation type ceramic casing |
| CN201417775Y (en) * | 2009-05-18 | 2010-03-03 | 陆小荣 | Plastic shell packaged flat plate thyristor |
| CN202120917U (en) * | 2011-05-11 | 2012-01-18 | 江阴市赛英电子有限公司 | Large power IGBT flat crimping type packaging structure |
| CN103579165A (en) * | 2013-11-04 | 2014-02-12 | 国家电网公司 | Full-pressure-welding power device |
| CN104465549A (en) * | 2014-12-15 | 2015-03-25 | 株洲南车时代电气股份有限公司 | Power conductor module |
| CN205248251U (en) * | 2015-11-26 | 2016-05-18 | 无锡天杨电子有限公司 | High -power total head meets formula IGBT multimode frame ceramic cartridge |
-
2015
- 2015-11-26 CN CN201510834108.5A patent/CN105355605A/en active Pending
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| CN101266952A (en) * | 2008-03-12 | 2008-09-17 | 江阴市赛英电子有限公司 | Novel full-press high-power IGBT multi-mode rack porcelain tube shell |
| CN201146179Y (en) * | 2008-06-13 | 2008-11-05 | 江阴市赛英电子有限公司 | Complete-crimp-connection rapid heat radiation type ceramic casing |
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| CN205248251U (en) * | 2015-11-26 | 2016-05-18 | 无锡天杨电子有限公司 | High -power total head meets formula IGBT multimode frame ceramic cartridge |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106332500A (en) * | 2016-09-30 | 2017-01-11 | 中国东方电气集团有限公司 | Crimping device based single-phase half-bridge power module |
| CN106783749A (en) * | 2016-12-15 | 2017-05-31 | 江阴市赛英电子股份有限公司 | A kind of super large-scale ceramic package structure |
| CN107768314A (en) * | 2017-10-21 | 2018-03-06 | 江阴市赛英电子股份有限公司 | A kind of flat board elastic compression joint encapsulation IGBT ceramic cartridges and preparation method |
| CN107768314B (en) * | 2017-10-21 | 2023-08-22 | 江阴市赛英电子股份有限公司 | Ceramic tube shell for flat elastic crimping packaging IGBT and preparation method |
| CN110047805A (en) * | 2019-04-30 | 2019-07-23 | 无锡天杨电子有限公司 | A kind of IGBT ceramic cartridge stress self-adaptive regulating structure |
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Application publication date: 20160224 |
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