CN208352289U - A kind of encapsulating structure of high-power IGBT chip - Google Patents
A kind of encapsulating structure of high-power IGBT chip Download PDFInfo
- Publication number
- CN208352289U CN208352289U CN201820821193.0U CN201820821193U CN208352289U CN 208352289 U CN208352289 U CN 208352289U CN 201820821193 U CN201820821193 U CN 201820821193U CN 208352289 U CN208352289 U CN 208352289U
- Authority
- CN
- China
- Prior art keywords
- igbt chip
- ceramic
- chip
- base
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a kind of encapsulating structures of high-power IGBT chip, including base of ceramic (1), igbt chip (7), diode chip for backlight unit (8) and the encapsulating housing (2) that Open Side Down, the encapsulating housing (2) is welded on the upper surface of base of ceramic (1), forms the accommodating space of igbt chip (7) and diode chip for backlight unit (8)；The upper surface of the ceramics base station (1) is additionally provided with metal. plating layer (3)；The igbt chip (7) and diode chip for backlight unit (8) are welded on the metal. plating layer (3)；It is provided with the groove (9) of opening upwards on the base of ceramic (1), is equipped with semiconductor cooler (10) in the groove (9), and the cold side of the semiconductor cooler (10) is contacted with metal. plating layer (3).The utility model effectively can avoid igbt chip from failing, and can take away the heat generated when igbt chip work, facilitate the steady operation of igbt chip.
Description
Technical field
The utility model relates to the encapsulation of igbt chip, more particularly to a kind of encapsulating structure of high-power IGBT chip.
Background technique
IGBT(insulated gate bipolar transistor) be one is by BJT (Bipolar Junction Transistor, it is double
Polar form triode) and MOS(insulating gate type field effect tube) composition compound full-control type voltage driven type power semiconductor, collection
Conjunction has the advantages that MOSFE(metal-oxide half field effect transistor) high input impedance and GTR(power transistor) low conduction voltage drop, tool
Have driving power small and saturation pressure reduce the characteristics of, be generally applicable to DC voltage be 600V or more converter system as exchange
The fields such as motor, frequency converter, Switching Power Supply, lighting circuit, Traction Drive.
IGBT is operated mainly in complete machine under switch state, and most of uses are under the conditions of inductive load.To make me
The complete machine that designs can be safer, more reliable work, the protection of IGBT is particularly important.Currently, using and setting
When counting IGBT, the surplus generally stayed is all larger, but still can not resist caused by interference and itself complete machine from the external world
Various Problem of Failure: stray inductance, machine induced electromotive force, the load sudden change etc. of internal cause such as device periphery distribution cause overvoltage
And overcurrent；External cause such as power network fluctuation, power induction, surge etc..IGBT failure is mainly by the mistake of collector and emitter
Pressure/overcurrent and over-voltage/overcurrent of gate pole cause.In addition, the presence of leakage inductance and lead-in inductance, will lead to IGBT collector mistake
Voltage, and latching effect is generated in device inside, make IGBT lockout failure, meanwhile, higher overvoltage can be such that IGBT punctures
IGBT enters amplification region for these reasons, increases pipe switching loss；Also, powerful igbt chip is worked
Cheng Zhonghui generates amount of heat, adverse effect may be brought to igbt chip, therefore when igbt chip encapsulation, to encapsulating structure
Heat dissipation design is extremely important.
Utility model content
The purpose of the utility model is to overcome the deficiencies in the prior art, provide a kind of encapsulation knot of high-power IGBT chip
Structure effectively can avoid igbt chip from failing, and can take away the heat generated when igbt chip work, facilitate igbt chip
Steady operation.
The purpose of this utility model is achieved through the following technical solutions: a kind of encapsulation knot of high-power IGBT chip
Structure, including base of ceramic, igbt chip, diode chip for backlight unit and the encapsulating housing that Open Side Down, the encapsulating housing is welded on pottery
The upper surface of porcelain pedestal forms the accommodating space of igbt chip and diode chip for backlight unit；The upper surface of the base of ceramic is also set up
There is metal. plating layer；The igbt chip and diode chip for backlight unit are welded on the metal. plating layer, and the current collection of igbt chip
The cathode of pole and diode chip for backlight unit is in electrical contact by the solder joint welded with metal. plating layer, the top weldering of the encapsulating housing
It is connected to the first pin, second pin and third pin；The gate pole of the igbt chip is carried out by conductive lead wire and the first pin
Electrical connection, the metal. plating layer are electrically connected by conductive lead wire with second pin realization, the emitter of the igbt chip
Pass through conductive lead wire respectively with the anode of diode chip for backlight unit to be electrically connected with the realization of third pin；
It is provided with the groove of opening upwards on the base of ceramic, semiconductor cooler is installed in the groove, it is described
The cold side of semiconductor cooler is contacted with metal. plating layer, and the hot end of semiconductor cooler is contacted with the bottom of groove.
Preferably, heat transfer bar is mounted on the left side and right side of the base of ceramic；The heat transfer bar insertion pottery
Porcelain base interior is simultaneously threadedly engaged with base of ceramic；Radiating fin is provided on the excircle of the heat transfer bar；The heat radiating fin
Piece is spiral metal piece, and spiral metal piece is wound in spiral form on the excircle of heat transfer bar.
The beneficial effects of the utility model are: (1) the utility model is during encapsulation, by the collector of igbt chip
It is in electrical contact by the solder joint welded with metal. plating layer with the cathode of diode chip for backlight unit, and metal. plating layer is passed through into conduction
Lead is electrically connected with second pin realization, while the anode of the emitter of igbt chip and diode chip for backlight unit is passed through conduction respectively
Lead is electrically connected with third pin, is equivalent between the collector and emitter of igbt chip Opposite direction connection one two
Pole pipe is conducive to avoid the failure of igbt chip to provide afterflow channel when igbt chip work, preventing breakdown damage；
(2) it is provided with the groove of opening upwards on base of ceramic, and semiconductor cooler is installed in a groove, helps to improve
The radiating efficiency of igbt chip improves the stability of igbt chip work；(3) pacify on the left side of base of ceramic and right side
Dress heat transfer bar, and radiating fin is set on the excircle of heat transfer bar, further improve the radiating efficiency of igbt chip.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model；
Fig. 2 is that schematic diagram is arranged in the groove on base of ceramic；
Fig. 3 is the scheme of installation of semiconductor cooler；
Fig. 4 is the setting schematic diagram of heat transfer bar；
In figure, 1- base of ceramic, 2- encapsulating housing, 3- metal. plating layer, the first pin of 4-, 5- second pin, 6- third
Pin, 7-IGBT chip, 8- diode chip for backlight unit, 9- groove, 10- semiconductor cooler, 11- heat transfer bar, 12- radiating fin.
Specific embodiment
The technical solution of the utility model, but the protection scope of the utility model are described in further detail with reference to the accompanying drawing
It is not limited to as described below.
As shown in Fig. 1 ~ 4, a kind of encapsulating structure of high-power IGBT chip, including base of ceramic 1, igbt chip 7, two poles
Tube chip 8 and the encapsulating housing 2 that Open Side Down, the encapsulating housing 2 are welded on the upper surface of base of ceramic 1, form IGBT core
The accommodating space of piece 7 and diode chip for backlight unit 8；The upper surface of the base of ceramic 1 is additionally provided with metal. plating layer 3；The IGBT
Chip 7 and diode chip for backlight unit 8 are welded on the metal. plating layer 3, and the collector of igbt chip 7 and diode chip for backlight unit 8
Cathode by welding solder joint be in electrical contact with metal. plating layer 3, the top of the encapsulating housing 2 be welded with the first pin 4,
Second pin 5 and third pin 6；The gate pole of the igbt chip 7 is electrically connected by conductive lead wire with the first pin 4,
The metal. plating layer 3 is electrically connected by conductive lead wire with the realization of second pin 5, the emitter of the igbt chip 7 and two poles
The anode of tube chip 8 passes through conductive lead wire respectively and is electrically connected with the realization of third pin 6；
In embodiments herein, the metal. plating layer 3 is copper coating layer, and the diode chip for backlight unit 8 is that FRD(is fast
Quick-recovery diode) chip；
It is provided with the groove 9 of opening upwards on the base of ceramic 1, semiconductor cooler 10 is installed in the groove 9,
The cold side of the semiconductor cooler 10 is contacted with metal. plating layer 3, and the hot end of semiconductor cooler 10 and the bottom of groove 9 connect
Touching.
In embodiments herein, heat transfer bar 11 is mounted on the left side and right side of the base of ceramic 1；Institute
Heat transfer bar 11 is stated to be inserted into 1 inside of base of ceramic and be threadedly engaged with base of ceramic 1；It is provided on the excircle of the heat transfer bar 11
Radiating fin 12；The radiating fin 12 is spiral metal piece, and spiral metal piece is wound on heat transfer bar 11 in spiral form
On excircle.
The utility model is carried out by conductive lead wire with the first pin 4 during encapsulation, by the gate pole of igbt chip 7
Electrical connection；By the cathode of the collector of igbt chip 7 and diode chip for backlight unit 8 by welding solder joint and metal. plating layer 3 into
Row electrical contact, and metal. plating layer 3 is realized by conductive lead wire and second pin 5 and is electrically connected, while by the hair of igbt chip 7
The anode of emitter-base bandgap grading and diode chip for backlight unit 8 passes through conductive lead wire respectively and is electrically connected with third pin 6；It is equivalent in igbt chip
One diode of Opposite direction connection between 7 collector and emitter, be conducive to for provided when igbt chip work afterflow channel,
Breakdown damage is prevented, the failure of igbt chip is avoided；The groove 9 of opening upwards is provided on base of ceramic 1, and recessed
Semiconductor cooler 10 is installed, the cold side of semiconductor cooler 10 is contacted with metal. plating layer 3, semiconductor cooler in slot 9
10 hot end is contacted with the bottom of groove 9, and the heat that igbt chip 7 generates when working is through metal. plating layer 3, semiconductor cooler
10 can quickly distribute, and help to improve ceramic substrate 1 to the radiating efficiency of igbt chip 7, improve 7 work of igbt chip
The stability of work；The installation heat transfer bar 11 on the left side and right side of base of ceramic 1, and be arranged on the excircle of heat transfer bar
Radiating fin 12 further improves the radiating efficiency of igbt chip；And in embodiments herein, the heat transfer insertion pottery of bar 11
1 inside of porcelain pedestal is simultaneously threadedly engaged with base of ceramic 1, has detachability, and convenient replacement or cleaning with heat transfer bar 11 avoids
Heat transfer bar 11 dust accretions are to heat dissipation bring adverse effect.
Finally it should be noted that above are merely preferred embodiments of the utility model, it is noted that for this technology
For the those of ordinary skill in field, without departing from the principle of this utility model, several improvement and profit can also be made
Decorations, these improvements and modifications also should be regarded as the protection scope of the utility model.
Claims (5)
1. a kind of encapsulating structure of high-power IGBT chip, it is characterised in that: including base of ceramic (1), igbt chip (7), two
Pole pipe chip (8) and the encapsulating housing (2) that Open Side Down, the encapsulating housing (2) are welded on the upper surface of base of ceramic (1),
Form the accommodating space of igbt chip (7) and diode chip for backlight unit (8)；The upper surface of the base of ceramic (1) is additionally provided with metal
Coating layer (3)；The igbt chip (7) and diode chip for backlight unit (8) are welded on the metal. plating layer (3), and igbt chip
(7) cathode of collector and diode chip for backlight unit (8) is in electrical contact by the solder joint of welding with metal. plating layer (3), described
The first pin (4), second pin (5) and third pin (6) are welded at the top of encapsulating housing (2)；The igbt chip (7)
Gate pole is electrically connected by conductive lead wire with the first pin (4), and the metal. plating layer (3) passes through conductive lead wire and second
Pin (5) realizes electrical connection, and the emitter of the igbt chip (7) and the anode of diode chip for backlight unit (8) pass through conduction respectively and draw
Line is realized with third pin (6) and is electrically connected；
It is provided with the groove (9) of opening upwards on the base of ceramic (1), semiconductor cooler is installed in the groove (9)
(10), the cold side of the semiconductor cooler (10) is contacted with metal. plating layer (3), the hot end of semiconductor cooler (10) with it is recessed
The bottom of slot (9) contacts.
2. a kind of encapsulating structure of high-power IGBT chip according to claim 1, it is characterised in that: the base of ceramic
(1) heat transfer bar (11) is mounted on left side and right side.
3. a kind of encapsulating structure of high-power IGBT chip according to claim 2, it is characterised in that: the heat transfer bar
(11) insertion base of ceramic (1) is internal and is threadedly engaged with base of ceramic (1).
4. a kind of encapsulating structure of high-power IGBT chip according to claim 2, it is characterised in that: the heat transfer bar
(11) radiating fin (12) are provided on excircle.
5. a kind of encapsulating structure of high-power IGBT chip according to claim 4, it is characterised in that: the radiating fin
It (12) is spiral metal piece, spiral metal piece is wound in spiral form on the excircle of heat transfer bar (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820821193.0U CN208352289U (en) | 2018-05-30 | 2018-05-30 | A kind of encapsulating structure of high-power IGBT chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820821193.0U CN208352289U (en) | 2018-05-30 | 2018-05-30 | A kind of encapsulating structure of high-power IGBT chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208352289U true CN208352289U (en) | 2019-01-08 |
Family
ID=64891433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820821193.0U Expired - Fee Related CN208352289U (en) | 2018-05-30 | 2018-05-30 | A kind of encapsulating structure of high-power IGBT chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208352289U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118510362A (en) * | 2024-07-18 | 2024-08-16 | 四川科尔威光电科技有限公司 | High-integration miniaturized semiconductor refrigerator and preparation method thereof |
-
2018
- 2018-05-30 CN CN201820821193.0U patent/CN208352289U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118510362A (en) * | 2024-07-18 | 2024-08-16 | 四川科尔威光电科技有限公司 | High-integration miniaturized semiconductor refrigerator and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106252320A (en) | Semiconductor device | |
| CN102683403A (en) | Trench gate charge storage type insulated gate bipolar transistor (IGBT) | |
| CN103887339A (en) | Transistor, transistor heat radiation structure and transistor production method | |
| CN108122896B (en) | Thin power module suitable for high-frequency application | |
| CN110071079A (en) | A kind of power device packaging structure and its method | |
| CN208352289U (en) | A kind of encapsulating structure of high-power IGBT chip | |
| CN105355605A (en) | Large power total-pressure-contact IGBT multi-die holder ceramic tube housing | |
| CN110634817B (en) | Packaging structure of hybrid power module composed of IGBT and MOSFET | |
| KR102339135B1 (en) | Bridge leg circuit assembly and full-bridge circuit assembly | |
| CN104465605A (en) | Semiconductor chip packaging structure | |
| CN208271887U (en) | A kind of high-power super-high pressure pulse half-wave rectifier bridge | |
| CN209389026U (en) | A kind of three-phase inversion IGBT module | |
| CN201185187Y (en) | High-power small encapsulation triode | |
| CN204204849U (en) | A kind of chip-packaging structure | |
| CN103051159A (en) | Power electronic device and hybrid power module thereof, and forming method of hybrid power module | |
| CN211209613U (en) | Brushless motor controller system | |
| CN205248251U (en) | High -power total head meets formula IGBT multimode frame ceramic cartridge | |
| CN209266402U (en) | A kind of protection type patch triode | |
| CN208208756U (en) | A kind of power module of novel package structure | |
| CN113725209A (en) | Multi-chip parallel structure for SiC/Si Cascode device | |
| CN102723327B (en) | Novel rectifier bridge for soybean milk maker | |
| CN204204845U (en) | A kind of semiconductor chip package | |
| CN202307903U (en) | Radio frequency-lateral double-diffused metal-oxide semiconductor (RF-LDMOS) device structure without epitaxial layer | |
| CN205016530U (en) | High stable switch transistor | |
| CN204118073U (en) | High frequency non-through insulated-gate bipolar transistor npn npn |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190108 Termination date: 20190530 |