CN103051159A - Power electronic device and hybrid power module thereof, and forming method of hybrid power module - Google Patents
Power electronic device and hybrid power module thereof, and forming method of hybrid power module Download PDFInfo
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- CN103051159A CN103051159A CN2013100061513A CN201310006151A CN103051159A CN 103051159 A CN103051159 A CN 103051159A CN 2013100061513 A CN2013100061513 A CN 2013100061513A CN 201310006151 A CN201310006151 A CN 201310006151A CN 103051159 A CN103051159 A CN 103051159A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/0406—Modifications for accelerating switching in composite switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The embodiment of the invention discloses a power electronic device and a hybrid power module thereof, and a forming method of the hybrid power module. The hybrid power module comprises an IGBT (Insulated Gate Bipolar Translator) switching device, a silicon carbide Schottky barrier diode and a grid biasing circuit, wherein the cathode of the silicon carbide Schottky barrier diode is connected with the collector of the IGBT switching device; the anode of the silicon carbide Schottky barrier diode is connected with the emitter of the IGBT switching device; and the grid biasing circuit is connected with the grid electrode of the IGBT switching device, and comprises a first resistor and a first diode which are connected in parallel with each other, and a second resistor which is connected with the parallel structure of the first resistor and the first diode. Due to the adoption of the power electronic device, the hybrid power module and the forming method, the oscillation phenomenon of the silicon carbide Schottky barrier diode existing in a reverse recovery process in the prior art is overcome, the oscillation phenomenon of the IGBT switching device existing in a cut-over process is eliminated, the problem of the remarkable high-frequency oscillation phenomenon of the power electronic device provided with the hybrid power module during working is solved, and the power electronic device works normally.
Description
Technical field
The present invention relates to power semiconductor manufacturing technology field, relate in particular to a kind of power electronic equipment and combined power module thereof, and a kind of formation method of combined power module.
Background technology
In every field such as automobile, household electrical appliances, industrial equipment, locomotive traction, electric power systems, the power loss that reduces inverter and frequency converter all is necessary problem, and this power semiconductor wherein plays an important role.The performance of traditional silica-based power semiconductor all near the theoretical limit of material, causes it to be difficult in actual applications to satisfy power electronic system to the new demand of device for power switching at blocking voltage, on state current, operating frequency and high temperature, the aspect such as efficient aspect a lot.
Semiconductor material with wide forbidden band take carborundum (SiC) as representative, have that energy gap is large, breakdown electric field is high, the saturated electrons drift rate is high, the physical characteristic of the high excellence of thermal conductivity, so that the SiC power electronic device has great advantage in applications such as high pressure, high temperature, high efficiency, high-frequencies.The SiC power electronic device can the decrease inverter and the loss of the power inverter such as frequency converter, greatly improves the conversion efficiency of the existing energy, can both play a significant role at new energy fields such as traditional industry field and solar energy.A kind of main application of silicon carbide schottky diode is in power electronic equipment, as the fly-wheel diode of the switching devices such as IGBT.
Because silicon carbide schottky barrier diode belongs to majority carrier device, it is little to have cut-in voltage, reverse recovery current is little, the characteristics such as reverse recovery time is short, and switching speed is fast, therefore, silicon carbide schottky barrier diode is replaced fast recovery diode, as the fly-wheel diode of the switching devices such as IGBT, can not only effectively reduce the reverse recovery energy loss of fly-wheel diode, can also reduce the peak current of the switching device such as IGBT and open energy loss.
Again because the advantage such as power model has that volume is little, shell and electrode insulation, reliability are high, easy for installation, therefore, in actual applications, usually silicon carbide schottky barrier diode is encapsulated in the same module as fly-wheel diode and IGBT switching device, as shown in Figure 1, form the combined power module, thereby effectively reduce the energy loss of power model, improve the conversion efficiency of the energy.
But there is obvious oscillatory occurences in silicon carbide schottky barrier diode in the prior art in reversely restoring process, causes simultaneously also having identical oscillatory occurences in the opening process of IGBT switching device.The existence of this oscillatory occurences will the significant higher-order of oscillation occur so that have the power electronic equipment of this combined power module, thereby can't work.
Summary of the invention
For solving the problems of the technologies described above, the embodiment of the invention provides a kind of power electronic equipment and combined power module thereof, and a kind of formation method of combined power module, to solve the oscillatory occurences that silicon carbide schottky barrier diode exists in the prior art in reversely restoring process, and the oscillatory occurences that exists in the opening process of elimination IGBT switching device, so that the power electronic equipment with this combined power module is when work, the problem that has significant HFO makes its normal operation.
For addressing the above problem, the embodiment of the invention provides following technical scheme:
A kind of combined power module comprises: the IGBT switching device; Negative electrode links to each other with the collector electrode of described IGBT switching device, the silicon carbide schottky barrier diode that anode links to each other with the emitter of described IGBT switching device; With the gate bias circuit that described IGBT switching device grid links to each other, described gate bias circuit comprises: the first resistance parallel with one another and the first diode, and second resistance of connecting with the parallel-connection structure of described the first resistance and the first diode.
Preferably, described gate bias circuit comprises: described the first resistance that links to each other with described IGBT switching device grid and the parallel-connection structure of the first diode; The second resistance that links to each other with the parallel-connection structure other end of described the first resistance and the first diode.
Preferably, described gate bias circuit comprises: the second resistance that links to each other with described IGBT switching device grid; Described the first resistance that links to each other with the other end of described the second resistance and the parallel-connection structure of the first diode.
Preferably, the resistance of described the first resistance is greater than 1000 Ω.
Preferably, described the first diode is rectifier diode.
A kind of power electronic equipment that comprises above-mentioned combined power module.
A kind of formation method of combined power module comprises: preparation aluminium nitride liner plate; Form patterned metal level at described aluminium nitride liner plate; Form parallel-connection structure, second resistance of IGBT switching device, silicon carbide schottky barrier diode, the first resistance and the first diode at the aluminium nitride liner plate; The aluminium nitride liner plate is fixed on the substrate; Realize that IGBT switching device, silicon carbide schottky barrier diode are electrically connected with metal level.
Preferably, described substrate is the aluminium silicon carbide substrate of nickel plating or the copper base of nickel plating.
Preferably, also comprise:
Adopt the method for Ultrasonic Cleaning and chemical cleaning, described substrate and aluminium nitride liner plate are cleaned.
Preferably, the parallel-connection structure, the second resistance that form IGBT switching device, silicon carbide schottky barrier diode, the first resistance and the first diode at described aluminium nitride liner plate comprise: adopt screen printing technique, scolder is evenly coated on the solder side of aluminium nitride liner plate; Adopt the high temperature reflux solder technology, IGBT switching device chip, silicon carbide schottky barrier diode chip, the first resistive patch element, the first diode surface mount elements and the second resistive patch element are welded on the solder side of described aluminium nitride liner plate.
Compared with prior art, technique scheme has the following advantages:
The technical scheme that the embodiment of the invention provides, increase biasing circuit by the grid at the IGBT switching device, and described biasing circuit comprises the first resistance parallel with one another and the first diode, thereby so that the forward current of IGBT switching device grid is not subjected to the impact of described the first resistance and the first diodes in parallel structure, can normally, and reverse current is because the impact of described the first resistance and the first diodes in parallel structure, effectively reduce, and then so that described biasing circuit is the grid of described IGBT switching device, stable grid current and grid voltage is provided, so that the anode voltage of silicon carbide schottky barrier diode keeps stable, the emitter voltage that is the IGBT switching device keeps stable, cut off the path of silicon carbide schottky barrier diode appearance vibration, effectively the oscillatory occurences in inhibition or the elimination silicon carbide schottky barrier diode reversely restoring process.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art, apparently, accompanying drawing in the following describes only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the electrical block diagram of combined power module in the prior art;
Fig. 2 is the current oscillation phenomenon schematic diagram of silicon carbide schottky barrier diode in the prior art;
The electrical block diagram of the combined power module that provides in the embodiment of the invention one is provided Fig. 3;
A kind of electrical block diagram of the combined power module that provides in the embodiment of the invention one is provided Fig. 4;
The another kind of electrical block diagram of the combined power module that provides in the embodiment of the invention one is provided Fig. 5;
The electrical block diagram of the power electronic equipment that provides in the embodiment of the invention one is provided Fig. 6;
The schematic flow sheet of the formation method of the combined power module that provides in the embodiment of the invention two is provided Fig. 7;
The structural representation of the formation method of the combined power module that provides in the embodiment of the invention two is provided Fig. 8-11.
Embodiment
Just as described in the background section, have the power electronic equipment of this combined power module in the prior art when work, have significant HFO, affect its normal operation.
The inventor studies discovery, and this mainly is because combined power module of the prior art just adopts a rational biasing resistor of resistance, and grid voltage and the electric current of IGBT switching device gate input are regulated.And in turn off process, because the reverse leakage current of silicon carbide schottky barrier diode is excessive, can not moment set up voltage at the two ends of silicon carbide schottky barrier diode, cause silicon carbide schottky barrier diode in turn off process, to have certain reverse recovery current.This reverse recovery current flow to the IGBT switching device, be superimposed upon on the basis of the original electric current of described IGBT switching device, flow through successively emitter, the collector electrode of this IGBT switching device, so that overshoot appears in the electric current of this IGBT switching device collector electrode place, simultaneously, in order to guarantee the voltage difference between this IGBT switching device grid-emitter into, forward current of grid stack of this IGBT switching device will be lured.
Again because silicon carbide schottky barrier diode is majority carrier device, after reverse recovery current reaches peak current, will the rapid reduction of electric current appears, thereby so that the electric current of this IGBT switching device collector electrode place reduces rapidly, simultaneously, in order to guarantee the voltage difference between this IGBT switching device grid-emitter, reverse current of grid stack of this IGBT switching device will be lured into, thereby change the emitter voltage of this IGBT switching device, it is the anode voltage of silicon carbide schottky barrier diode, and then so that the stray inductance of power supply and IGBT switching device, oscillatory occurences appears in the loop that silicon carbide schottky barrier diode forms, cause existing in the silicon carbide schottky barrier diode reversely restoring process obvious oscillatory occurences, as shown in Figure 2, and then cause having the power electronic equipment of this combined power module when work, there is significant HFO, affects its normal operation.
The inventor further studies discovery, for the oscillatory occurences that exists in inhibition or the elimination silicon carbide schottky barrier diode reversely restoring process, thereby has the power electronic equipment of this combined power module in the solution prior art when work, the problem that has significant HFO, make its normal operation, following three kinds of schemes arranged:
Scheme one: by reducing the reverse leakage current of silicon carbide schottky barrier diode, so that the electric current of silicon carbide schottky barrier diode reaches the moment of null value, reverse voltage is set up rapidly at two ends at silicon carbide schottky barrier diode, thereby make the characteristic of silicon carbide schottky barrier diode performance unipolar device, reverse recovery current can not appear, fundamentally solve the oscillatory occurences in the silicon Schotty barrier diode reversely restoring process, thereby has the power electronic equipment of this combined power module in the solution prior art when work, the problem that has significant HFO makes its normal operation;
Scheme two: by adjusting the structure of silicon carbide schottky barrier diode, the moment reduction can not appear in the reverse current that is silicon carbide schottky barrier diode after reaching peak value, but steadily descend, thereby can not cause the oscillatory occurences in the silicon carbide schottky barrier diode reversely restoring process, thereby has the power electronic equipment of this combined power module in the solution prior art when work, the problem that has significant HFO makes its normal operation;
Scheme three: by optimizing the gate bias circuit of IGBT switching device, make the gate bias circuit of IGBT switching device provide stable grid current and grid voltage for the IGBT switching device, thereby the anode voltage that makes silicon carbide schottky barrier diode reaches stable, eliminate the factor that vibration appears in silicon carbide schottky barrier diode, and then the oscillatory occurences that exists in inhibition or the elimination silicon carbide schottky barrier diode reversely restoring process, thereby has the power electronic equipment of this combined power module in the solution prior art when work, the problem that has significant HFO makes its normal operation.
The inventor further studies discovery, and the scheme one in the such scheme and scheme two need to change the structure of silicon carbide schottky barrier diode, and difficulty is larger, and has certain uncertainty.
On the basis based on above-mentioned research, the embodiment of the invention provides a kind of power electronic equipment and combined power module thereof, and this combined power module comprises: the IGBT switching device; Negative electrode links to each other with the collector electrode of described IGBT switching device, the silicon carbide schottky barrier diode that anode links to each other with the emitter of described IGBT switching device; With the gate bias circuit that described IGBT switching device grid links to each other, described gate bias circuit comprises: the first resistance parallel with one another and the first diode, and second resistance of connecting with the parallel-connection structure of described the first resistance and the first diode.
The technical scheme that the embodiment of the invention provides, increase biasing circuit by the grid at the IGBT switching device, and described biasing circuit comprises the first resistance parallel with one another and the first diode, thereby so that the forward current of IGBT switching device grid is not subjected to the impact of described the first resistance and the first diodes in parallel structure, can normally, and reverse current is because the impact of described the first resistance and the first diodes in parallel structure, effectively reduce, and then so that described biasing circuit is the grid of described IGBT switching device, stable grid current and grid voltage is provided, so that the anode voltage of silicon carbide schottky barrier diode keeps stable, the emitter voltage that is the IGBT switching device keeps stable, cut off the path of silicon carbide schottky barrier diode appearance vibration, effectively the oscillatory occurences in inhibition or the elimination silicon carbide schottky barrier diode reversely restoring process.
For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here and implements with multiple, and those skilled in the art can do similar popularization in the situation of intension of the present invention.Therefore the present invention is not subjected to the restriction of following public implementation.
Embodiment one:
As shown in Figure 3, the embodiment of the invention provides a kind of combined power module, comprising:
IGBT switching element T 1;
Negative electrode links to each other with the collector electrode of described IGBT switching element T 1, the silicon carbide schottky barrier diode D that anode links to each other with the emitter of described IGBT switching element T 1
F, described silicon carbide schottky barrier diode is used for afterflow;
The gate bias circuit that links to each other with described IGBT switching device grid, described gate bias circuit comprises: the first resistance parallel with one another and the first diode, and second resistance of connecting with the parallel-connection structure of described the first resistance and the first diode, described biasing circuit is used for regulating grid voltage and the electric current of described IGBT switching element T 1.
In embodiments of the present invention, described the first diode is preferably rectifier diode, in other embodiments of the invention, described the first diode also can be power semiconductor, the present invention does not do restriction to this, as long as described the first diode has forward conduction, oppositely the characteristic of cut-off gets final product.
As shown in Figure 4, in one embodiment of the invention, described biasing circuit comprises:
Described the first resistance R that links to each other with described IGBT switching element T 1 grid
PWith the first diode D
RParallel-connection structure;
With described the first resistance R
PWith the first diode D
RThe second resistance R of linking to each other of the parallel-connection structure other end
g
As shown in Figure 5, in another embodiment of the present invention, described biasing circuit comprises:
The second resistance R that links to each other with described IGBT switching element T 1 grid
g
Described the first resistance R that links to each other with the other end of described the second resistance
PWith the first diode D
RParallel-connection structure.
Wherein, described the first resistance R
PBe high value resistor, described the second resistance R
gBe low resistance, in one embodiment of the invention, described the first resistance R
PStandard resistance range be preferably more than 1000 Ω; In another embodiment of the present invention, described the second resistance R
gStandard resistance range be preferably 1 Ω-20 Ω, the present invention does not do restriction to this, be determined on a case-by-case basis.
In the power electronic equipment that the embodiment of the invention provides and the combined power module thereof, increase biasing circuit by the grid at the IGBT switching device, and described biasing circuit comprises the first resistance parallel with one another and the first diode, thereby so that the forward current of IGBT switching device grid is not subjected to the impact of described the first resistance and the first diodes in parallel structure, can normally, and reverse current is because the impact of described the first resistance and the first diodes in parallel structure, effectively reduce, and then so that described biasing circuit is the grid of described IGBT switching device, stable grid current and grid voltage is provided, so that the anode voltage of silicon carbide schottky barrier diode keeps stable, the emitter voltage that is the IGBT switching device keeps stable, cut off the path of silicon carbide schottky barrier diode appearance vibration, effectively the oscillatory occurences in inhibition or the elimination silicon carbide schottky barrier diode reversely restoring process.
The embodiment of the invention also provides a kind of power electronic equipment that comprises above-mentioned combined power module, as shown in Figure 6, wherein, the common port of the collector electrode of described IGBT switching element T I and the negative electrode of silicon carbide schottky barrier diode is the input of described combined power module, with externally fed end V
DCLink to each other; The common port of the emitter of described IGBT switching element T I and the anode of silicon carbide schottky barrier diode is the output of described combined power module, also with externally fed end V
DCLink to each other; Described biasing circuit is away from an end of described IGBT switching element T I grid, with external gate drive circuit V
GLink to each other; L
LoadBe load inductance.
In IGBT switching element T I opening process, the grid of described IGBT switching element T I is in the forward current conducting state, the D of the first diode
RBe in conducting state, the grid forward current is by the first diode D of lower branch road
R, process series connection the second resistance R g flows into the grid of IGBT switching device again, because the first diode D
RBe in the forward conduction state, its forward resistance is very little, can ignore, and therefore, the input resistance size of the IGBT switching device of grid forward current conducting is by the second resistance R
gSize determine, identical with the input resistance of combined power module in the prior art; Because the silicon carbide schottky barrier diode D as fly-wheel diode
FReverse leakage current excessive, will cause that reverse leakage current appears in IGBT switching element T 1 grid, for the grid reverse leakage current of IGBT switching element T 1, the second diode D
FBe in reverse-bias state, backward resistance is very large, and at this moment the grid reverse leakage current passes through branch road the first resistance R again via the second resistance R g
PFlow out.The first resistance R that adopts among the present invention
P1000 ohm of resistances large (〉), therefore can greatly reduce the grid reverse leakage current size of IGBT switching element T 1, thereby to load inductance L
LoadWith silicon carbide schottky barrier diode D
FThe ability of bringing out that occurs oscillatory occurences in the circuit weakens, and then the oscillatory occurences in the reversely restoring process of establishment silicon carbide diode, so that this power electronic equipment can work.
Embodiment two:
The embodiment of the invention provides a kind of formation method of combined power module, as shown in Figure 7, comprising:
Step 101: preparation aluminium nitride liner plate.
The actual conditions of the combined power module that forms for silicon carbide schottky barrier diode and IGBT switching device, in order to suppress the oscillatory occurences in the silicon carbide schottky barrier diode turn off process, corresponding with it aluminium nitride (AlN) liner plate is also made in design, and described aluminium nitride liner plate has high thermal conductivity, the characteristics such as thermal coefficient of expansion close with carborundum.
Step 102: form patterned metal level at described aluminium nitride liner plate.
Directly cover process for copper in the employing of aluminium nitride liner plate, realize graphics processing, thereby form patterned metal level at described aluminium nitride liner plate, as shown in Figure 8.
Need to prove, before described aluminium nitride liner plate forms patterned metal level, also comprise: adopt the method for Ultrasonic Cleaning and chemical cleaning, described aluminium nitride liner plate is cleaned, remove particulate matter, ionic impurity and the grease contamination etc. on described aluminium nitride liner plate surface.
Step 103: at parallel-connection structure, second resistance of aluminium nitride liner plate formation IGBT switching device, silicon carbide schottky barrier diode, the first resistance and the first diode, as shown in Figure 9.
In one embodiment of the invention, step 103 comprises:
Step 1031: select SnAg as scolder, adopt screen printing technique, scolder is evenly coated on the solder side of aluminium nitride liner plate;
Step 1032: adopt the high temperature reflux solder technology, IGBT switching device chip, silicon carbide schottky barrier diode chip, the first resistive patch element, the first diode surface mount elements and the second resistive patch element are welded on the solder side of described aluminium nitride liner plate.
Need to prove that described IGBT switching device chip and silicon carbide schottky barrier diode chip are bare chip, can directly be welded on the solder side of described aluminium nitride liner plate; Described the first resistive patch element, the first diode surface mount elements and the second resistive patch element are surface patch element (SMD), can by the mode of welding, be fixed on the solder side of described aluminium nitride liner plate or on the shell.
Step 104: the aluminium nitride liner plate is fixed on the substrate.
Select the silicon carbide substrate of nickel plating or the copper base of nickel plating, substrate as described combined power module, and select SnAg as scolder, adopt screen printing technique, scolder is evenly coated on the substrate, then adopt reflow solder technique, realize the welding of substrate and aluminium nitride liner plate, the aluminium nitride liner plate is fixed on the substrate.
Need to prove, before being fixed on the aluminium nitride liner plate on the substrate, also comprise: adopt the method for Ultrasonic Cleaning and chemical cleaning, described substrate is cleaned, remove particulate matter, ionic impurity and the grease contamination etc. of described substrate surface.
Step 105: realize that IGBT switching device, silicon carbide schottky barrier diode are electrically connected with metal level, as shown in figure 10.
Select aluminium to go between as electricity, adopt the mode of Bonding, respectively the electrode of silicon carbide schottky barrier diode chip and IGBT switching device chip is drawn, one end of lead-in wire links to each other with IGBT switching device chip with described silicon carbide schottky barrier diode chip, the other end is connected with the metal level of aluminium nitride liner plate, and metal level corresponding on the electrode of realizing silicon carbide schottky barrier diode and IGBT switching device and the aluminium nitride liner plate is electrically connected.
In addition, the formation method of the combined power module that the embodiment of the invention provides also comprises:
Step 106: make power terminal.
The selection of material is power terminal of 260 brass, make power terminal have higher conductivity and mechanical property, adopt SnPbAg as scolder, power terminal is welded on drawing on the interface electrode of aluminium nitride liner plate, and with the sub-bending forming of power terminal.
Step 107: described combined power module is encapsulated, as shown in figure 11.
Step 107 specifically comprises: fill first resilient coating and sealant, shell, Guan Gai are installed again.Wherein, resilient coating is selected double-component silicon, can keep elasticity for a long time under 250 ℃ of conditions, and have good insulation characterisitic and chemical stability; Sealant adopts High temp. epoxy resins, has good high-temperature stability and mechanical support and insulation characterisitic; Shell and enclosure cap adopt the DAP plastic support, have good mechanical strength and insulating capacity.
The formation method of the combined power module that the embodiment of the invention provides, increase biasing circuit by the grid at the IGBT switching device, and described biasing circuit comprises the first resistance parallel with one another and the first diode, thereby so that the forward current of IGBT switching device grid is not subjected to the impact of described the first resistance and the first diodes in parallel structure, can normally, and reverse current is because the impact of described the first resistance and the first diodes in parallel structure, effectively reduce, and then so that described biasing circuit is the grid of described IGBT switching device, stable grid current and grid voltage is provided, so that the anode voltage of silicon carbide schottky barrier diode keeps stable, the emitter voltage that is the IGBT switching device keeps stable, cut off the path of silicon carbide schottky barrier diode appearance vibration, effectively the oscillatory occurences in inhibition or the elimination silicon carbide schottky barrier diode reversely restoring process.
Various piece adopts the mode of going forward one by one to describe in this specification, and what each part stressed is and the difference of other parts that identical similar part is mutually referring to getting final product between the various piece.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be apparent concerning those skilled in the art, and General Principle as defined herein can in the situation that does not break away from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention will can not be restricted to embodiment illustrated herein, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. a combined power module is characterized in that, comprising:
The IGBT switching device;
Negative electrode links to each other with the collector electrode of described IGBT switching device, the silicon carbide schottky barrier diode that anode links to each other with the emitter of described IGBT switching device;
With the gate bias circuit that described IGBT switching device grid links to each other, described gate bias circuit comprises: the first resistance parallel with one another and the first diode, and second resistance of connecting with the parallel-connection structure of described the first resistance and the first diode.
2. combined power module according to claim 1 is characterized in that, described gate bias circuit comprises:
Described the first resistance that links to each other with described IGBT switching device grid and the parallel-connection structure of the first diode;
The second resistance that links to each other with the parallel-connection structure other end of described the first resistance and the first diode.
3. combined power module according to claim 1 is characterized in that, described gate bias circuit comprises:
The second resistance that links to each other with described IGBT switching device grid;
Described the first resistance that links to each other with the other end of described the second resistance and the parallel-connection structure of the first diode.
4. each described combined power module according to claim 1 is characterized in that the resistance of described the first resistance is greater than 1000 Ω.
5. combined power module according to claim 4 is characterized in that, described the first diode is rectifier diode.
6. power electronic equipment that comprises each described combined power module of claim 1-5.
7. the formation method of a combined power module is characterized in that, comprising:
Preparation aluminium nitride liner plate;
Form patterned metal level at described aluminium nitride liner plate;
Form parallel-connection structure, second resistance of IGBT switching device, silicon carbide schottky barrier diode, the first resistance and the first diode at the aluminium nitride liner plate;
The aluminium nitride liner plate is fixed on the substrate;
Realize that IGBT switching device, silicon carbide schottky barrier diode are electrically connected with metal level.
8. formation method according to claim 7 is characterized in that, described substrate is the aluminium silicon carbide substrate of nickel plating or the copper base of nickel plating.
9. formation method according to claim 8 is characterized in that, also comprises:
Adopt the method for Ultrasonic Cleaning and chemical cleaning, described substrate and aluminium nitride liner plate are cleaned.
10. formation method according to claim 7 is characterized in that, the parallel-connection structure, the second resistance that form IGBT switching device, silicon carbide schottky barrier diode, the first resistance and the first diode at described aluminium nitride liner plate comprise:
Adopt screen printing technique, scolder is evenly coated on the solder side of aluminium nitride liner plate;
Adopt the high temperature reflux solder technology, IGBT switching device chip, silicon carbide schottky barrier diode chip, the first resistive patch element, the first diode surface mount elements and the second resistive patch element are welded on the solder side of described aluminium nitride liner plate.
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