CN208739041U

CN208739041U - A kind of the three phase full bridge circuit and intelligent power module of gallium nitride chip

Info

Publication number: CN208739041U
Application number: CN201821053251.6U
Authority: CN
Inventors: 李孟; 罗广豪; 李幸辉
Original assignee: Gallium Energy Semiconductor (foshan) Co Ltd
Current assignee: Gallium Energy Semiconductor (foshan) Co Ltd
Priority date: 2018-07-04
Filing date: 2018-07-04
Publication date: 2019-04-12
Anticipated expiration: 2028-07-04

Abstract

The utility model provides the three phase full bridge circuit and intelligent power module of a kind of gallium nitride chip, three phase full bridge circuit inside the intelligent power module includes the pcb board of three phase full bridge circuit connection cabling between 6 device for power switching of 6 device for power switching and offer, chip is formed 6 device for power switching in groups using at least one gallium nitride collection, at least one described gallium nitride collection in groups chip formal dress on the pcb board；All connection pads of each gallium nitride collection chip in groups are respectively positioned on the one side far from the pcb board, and using lead and corresponding pad solder on the pcb board.The utility model replaces IGBT or MOS using GaN HEMT in IPM, on keeping original apparatus for production line and technique, reduces the volume of IPM, reduces process complexity of the IPM when SIP is encapsulated, reduces cost.

Description

Three-phase full-bridge circuit of gallium nitride chip and intelligent power module

Technical Field

The utility model relates to an IPM technical field, especially a three-phase full-bridge circuit and intelligent power module of gallium nitride chip.

Background

As shown in fig. 1A, 1B, and 1C, an Intelligent Power Module (IPM) integrates a Power switch device (mainly, an IGBT or an MOS) with a driving component and a protection component. The protection components generally have fault detection and protection components such as overvoltage, overcurrent and overheat, and can send detection signals to the MCU. IPM is widely used in various electric and electronic fields such as motor drive, frequency converter, inverter, high-power supply, etc. The IPM generally has 6 or 7 high power switching devices integrated therein, and the current high power switching devices are IGBTs (as shown in fig. 2B) or MOS (as shown in fig. 2A).

The high-power switching device shown in fig. 2B is an Insulated Gate Bipolar Transistor (IGBT), which is a power switching device commonly used in power electronics, and a circuit symbol of the IGBT is shown in fig. 3(a), fig. 3(B) shows a schematic diagram of an electrode front surface of an IGBT chip, fig. 3(C) shows a schematic diagram of an electrode reverse surface of the IGBT chip, and a base B, a collector C, and an emitter E are shown in fig. 3(B) and fig. 3 (C).

The high-power switching device shown in fig. 2A is a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), which is referred to as MOS/MOS Transistor for short, and is a commonly used power switching device in power electronics. The circuit symbol is shown in fig. 4(a), fig. 4(b) shows the front side of the MOS chip, and fig. 4(c) shows the back side of the MOS chip, such as the gate G, the drain D, and the source S.

In addition, a Fast Recovery Diode (FRD) is also used in fig. 2A and 2B, which belongs to one of the diodes, and the Fast recovery diode has a Fast reverse recovery speed and is widely applied to the power processing circuit. The circuit symbol of the diode is shown in fig. 5 (a). Each silicon power switch must be connected in parallel with an FRD. In the use of the IGBT, an FRD is connected in parallel between ECs of IGBT tubes to protect the IGBT tubes from breakdown by a high reverse voltage, and fig. 5(b) and 5(c) show a positive electrode P and a negative electrode N of an FRD chip.

Fig. 6A shows a schematic diagram of a three-phase full bridge, which is also called a three-phase full bridge circuit, a three-phase full bridge inverter, or a three-phase bridge inverter circuit, that is, a half bridge is formed by connecting two pairs of 2 power switching tubes in series, and then connecting 3 pairs of partial electrodes of the power switching tubes after series connection. The IPM circuit is mainly used for various motor drives, power supplies and the like, and the IPM circuit in the FIG. 2B also comprises the circuit.

At present, power tubes used by a three-phase full-bridge circuit in an IPM are all IGBT or MOS tubes, 6 (forming the three-phase full-bridge circuit) or 7 (one is used for a PFC circuit, and 6 are used for the three-phase full-bridge circuit) power switch tubes are integrated in the IPM according to different usages, and meanwhile, each power switch tube is connected with a Fast Recovery Diode (FRD) in parallel. Fig. 6A and 6B illustrate a three-phase full bridge circuit in which FRDs are connected in parallel, using MOS transistors as an example. Wherein, MOS or IGBT ' S D utmost point pad beading is on the PCB board directly, FRD ' S the N utmost point (negative pole) also is the beading on the PCB board, walk the line through the PCB board and connect, and positive all the other electrode pads, like MOS or IGBT ' S the G utmost point, the S utmost point and FRD ' S the P utmost point, then bind through the lead wire, be connected to on the pad that the PCB board corresponds, can directly see in 6B, the three-phase full bridge circuit ' S that 6 MOS or IGBT constitute lead wire is bound quantity and is needed 18 leads wires at least and just can accomplish the connection of circuit.

The disadvantages of the existing IPMs are as follows:

the IPM generally comprises 6 or 7 independent high-power silicon chips as switching devices, independent driving components and protection components, and the silicon IPM module is usually large in size, easy to generate parasitic parameter influence and low in energy conversion efficiency and integration level.

Specifically, 1) under the same power, because the area of an IGBT or MOS chip is larger; the silicon switch device has larger on-resistance, slower switching speed and longer reverse recovery time, thus leading to larger energy loss of the switch and generating more heat energy to influence the switching performance of the switch device;

2) at present, the silicon IPM of the IGBT or the MOS is used, and the characteristics of a silicon switch device require that each IGBT or MOS is connected with a fast recovery diode with the current capability similar to that of the IGBT or the MOS in parallel to safely and effectively realize the switching action, so the cost is high, the volume is large, and the complexity of the connection process of the IPM circuit is increased.

3) At present, IPM using IGBT or MOS is formed by utilizing discrete devices (independent devices), and a plurality of leads are needed to be bound with each other, so that parasitic parameters are easily influenced, the reliability of the IPM is reduced, and the size cannot be further reduced and the integration level cannot be further improved.

Therefore, it is a problem to be solved by the present invention to provide a chip/circuit capable of solving the above problems.

SUMMERY OF THE UTILITY MODEL

To the problem among the prior art, the utility model provides a three-phase full-bridge circuit and intelligent power module of gallium nitride chip.

In a first aspect, the present invention provides a three-phase full bridge circuit of gallium nitride chip, including: 6 power switch device and provide the PCB board of three-phase full-bridge circuit connection line between 6 power switch device, wherein, 6 power switch device adopt at least one gallium nitride to integrate into the group chip and form, at least one gallium nitride is integrated to organize the chip and is just adorning on the PCB board.

Optionally, the at least one gan ic chip is mounted on the PCB board, including:

all the connecting pads of the at least one gallium nitride integrated group chip are located on one surface far away from the PCB, and the at least one gallium nitride integrated group chip is bound and connected with the corresponding pads on the PCB by adopting leads.

Optionally, each of the 6 power switches respectively corresponds to one gallium nitride high electron mobility transistor structure in the at least one gallium nitride integrated group chip.

Optionally, the at least one gallium nitride integrated package chip comprises:

the three-phase full-bridge circuit comprises six gallium nitride integrated group chips which are arranged on the PCB, a single gallium nitride high-electron-mobility transistor structure is integrated in each gallium nitride integrated group chip, and the gallium nitride integrated group chips are packaged chips or unpackaged bare chips; or,

the at least one gallium nitride integrated package chip comprises:

the three-phase full-bridge circuit comprises three gallium nitride integrated group chips which are arranged on the PCB, wherein a gallium nitride high electron mobility transistor structure in a half-bridge mode is integrated in each gallium nitride integrated group chip, and the gallium nitride integrated group chips are packaged chips or unpackaged bare chips; or,

the at least one gallium nitride integrated package chip comprises:

the three-phase full-bridge circuit comprises two gallium nitride integrated group chips which are arranged on the PCB, three gallium nitride high-electron-mobility transistor structures are integrated in each gallium nitride integrated group chip, the gallium nitride integrated group chips are packaged chips or unpackaged bare chips, one gallium nitride integrated group chip is used as a power switch at the high end of the three-phase full-bridge circuit, and the other gallium nitride integrated group chip is used as a power switch at the low end of the three-phase full-bridge circuit; or,

the at least one gallium nitride integrated package chip comprises:

the three-phase full-bridge circuit comprises a gallium nitride integrated group chip which is positively arranged on the PCB, six gallium nitride high-electron-mobility transistor structures are integrated inside the gallium nitride integrated group chip, and the gallium nitride integrated group chip is in a form of a packaged chip or an unpackaged bare chip.

Optionally, the input end and the output end of the three-phase full-bridge circuit and the connecting end for connecting with an external circuit are pad electrodes on the PCB.

Optionally, the inside of the gan ic further includes a driving circuit for driving the internal gan hemt structure, and each gan hemt structure inside the gan ic corresponds to one driving circuit.

In a second aspect, the present invention further provides an intelligent power module of the gan chip, wherein the three-phase full bridge circuit inside the intelligent power module adopts any one of the above three-phase full bridge circuit.

Optionally, the smart power module further comprises: a driving component and/or a protection component facilitating driving and/or protecting of the intelligent power module IPM by an external controller;

the driving component and/or the protection component are/is connected with the three-phase full-bridge circuit by means of pad electrodes on the PCB respectively.

The utility model discloses beneficial effect who has:

1) the third generation semiconductor gallium nitride power device chip has much smaller area than the IGBT and MOS switch device chips made of traditional silicon materials under the same power; compared with a silicon switch device, the on-resistance is small, the switch conversion speed is high, particularly, reverse recovery time is almost not generated, the switch energy loss is small, and the IPM energy conversion efficiency and the integration level can be greatly improved by using a gallium nitride power device to replace a silicon device in the original IPM. The utility model discloses in mainly through gallium nitride integration group chip, itself is the integrated group chip that contains two at least gallium nitride switch device structures, the volume that the power device that can significantly reduce brought to reduce the whole size of IPM, increase the integrated level of IPM.

2) The GaN HEMT is used for replacing an IGBT or an MOS in the IPM, and the GaN HEMT does not need to be connected with diodes in parallel when being used in the IPM due to the special reverse conduction characteristic of the GaN HEMT, so that the cost of 6 diodes is saved, the volume of the packaged IPM is reduced, the process complexity of IPM production is reduced, meanwhile, the loss of the diodes in the switching process is reduced, and the energy conversion efficiency of the IPM is improved.

3) In the IPM, discrete IGBTs or MOS are replaced by high-integration gallium nitride integrated group chips, and different integrated group chips forming the three-phase full-bridge circuit enable the number of chips of a three-phase full-bridge circuit switch device of the IPM to be reduced from 12 to 6, 3, 2 and 1, so that the improvement of the integration level greatly reduces the volume of the whole IPM, reduces the lead binding between the chips and a PCB, reduces the parasitic parameter influence of the IPM and improves the reliability of the IPM.

4) The utility model discloses used special gallium nitride power device integrates to be the group chip, pastes PCB board (rewiring) at former silicon IPM device through just adorning, under the technological process that does not change former encapsulation and produce the line, simplifies and has reduced the step quantity of many processes, improves and produces line production efficiency and yields, produces the novel third generation semiconductor gallium nitride IPM of higher integrated level, high power density, high energy efficiency and high reliability on former silicon IPM produces the line more smoothly high-efficiently.

5) The problems that the existing IGBT or MOS-dominated silicon IPM module is large in size, low in energy conversion efficiency, complex in packaging process and serious in parasitic parameter influence are solved, and the novel third-generation semiconductor gallium nitride IPM with higher integration level, high power density, high energy efficiency and high reliability is produced on the original silicon IPM production line more smoothly and efficiently.

Drawings

FIGS. 1A, 1B, and 1C are schematic exterior views of IPM in the prior art;

FIG. 2A is a schematic diagram of an IPM using MOS in the prior art;

FIG. 2B is a schematic diagram of an IPM using IGBT in the prior art;

FIG. 3 is a schematic diagram of circuit symbol, front and back sides of an IGBT in the prior art;

FIG. 4 is a schematic diagram of circuit symbol, front and back sides of MOS in the prior art;

FIG. 5 is a schematic diagram of a circuit symbol, front and back sides of a FRD in the prior art;

FIGS. 6A and 6B are schematic diagrams of a three-phase full bridge circuit based on MOS transistor in the prior art

An intent;

fig. 7 is a schematic diagram of a circuit symbol, front and back sides of a gan hemt according to the present invention;

fig. 8 is a schematic diagram of IPM in embodiment 1 of the present invention;

fig. 9 is a schematic diagram of welding a pad in a chip and a pad on a PCB in a three-phase full-bridge circuit according to embodiment 1 of the present invention;

fig. 10A is a schematic diagram of a three-phase full-bridge circuit according to embodiment 2 of the present invention;

fig. 10B is a schematic diagram of IPM in embodiment 2 of the present invention;

fig. 10C and fig. 10D are schematic diagrams of a three-phase full-bridge circuit according to embodiment 2 of the present invention;

fig. 10E is a schematic diagram of a part of connection terminals of a three-phase full-bridge circuit according to embodiment 2 of the present invention;

fig. 11A is a schematic diagram of a three-phase full bridge circuit according to embodiment 3 of the present invention;

fig. 11B is a schematic diagram of IPM in embodiment 3 of the present invention;

fig. 11C and 11D are schematic diagrams of a three-phase full-bridge circuit according to embodiment 3 of the present invention;

fig. 12A is a schematic diagram of a three-phase full-bridge circuit according to embodiment 4 of the present invention;

fig. 12B and 12C are schematic diagrams of IPM in embodiment 4 of the present invention, respectively;

fig. 12D and 12E are schematic diagrams of a three-phase full-bridge circuit according to embodiment 4 of the present invention;

fig. 13A, 13B, 13E and 13F are schematic diagrams of each gan hemt structure in the grouped chips according to embodiments 2 to 4 of the present invention;

fig. 13C and fig. 13D are schematic diagrams of a three-phase full bridge circuit according to an embodiment of the present invention;

FIG. 14 is a schematic diagram of a reverse recovery charge comparison of a prior art MOS and a GaN HEMT of the present invention;

fig. 15A, 15B and 15C are schematic structural diagrams of an IPM according to another embodiment of the present invention;

fig. 16A is a schematic diagram of a three-phase full-bridge circuit according to embodiment 5 of the present invention;

fig. 16B and 16C are schematic diagrams of a three-phase full bridge circuit according to the present invention 5.

Description of the reference numerals

10: high-end drive

11: low side drive

12: protection, fault indication, etc. other components

13. Three-phase full-bridge circuit

14. Gallium nitride integrated group chip

15. Lead wire

16. SIP's PCB board in IPM

17. Pad/pad electrode on PCB board

18a, an input end I; 18b, input end two; 18c, an output end; 18d, a high-side control end; 18e, a low side control terminal.

Detailed Description

For a better understanding of the present invention, reference will now be made in detail to the present invention, examples of which are illustrated in the accompanying drawings.

For better understanding of the contents of the present invention, some words used in the present invention are explained as follows:

righting: the front surface (the surface containing the connecting bonding pad) of the packaged chip or the unpackaged bare chip is upward, and the bottom of the packaged chip or the unpackaged bare chip is directly welded on a packaging support or a PCB (printed circuit board);

the embodiment of the utility model provides a gallium nitride high electron mobility transistor structure mentioned can be E-Mode GaNHEMT or Cascode cascaded GaN HEMT, and wherein, Cascode cascaded GaN HEMT comprises D-Mode GaN HEMT and LVMOSFET.

A GaN HEMT: the circuit symbol of the gallium nitride high electron mobility transistor is shown in fig. 7(a), the electrode pattern of the chip front side is shown in fig. 7(b), and the electrode pattern of the chip reverse side is shown in fig. 7 (c).

It should be noted that the wire bonding mentioned in the embodiment of the present invention refers to connecting two pads/electrodes by means of a lead.

Binding (binding): in the packaging process, two electrodes or two positions are connected by metal wires (leads).

Example 1

The present embodiment provides a smart power module with gallium nitride chips, wherein a three-phase full bridge circuit 13 inside the smart power module includes 6 power switches, and the 6 power switches are formed by at least one gallium nitride integrated group chip (see the following description of embodiments 2 to 5).

The three-phase full bridge circuit in this embodiment includes: the PCB for realizing the connection and routing of the three-phase full-bridge circuit and at least one gallium nitride integrated group chip which is normally arranged on the PCB are integrated;

all connection pads of each gallium nitride integration group chip all are located and keep away from the one side of PCB board, and adopt the lead wire with the pad that corresponds on the PCB board is bound and is connected, and with the help of the line formation three-phase full-bridge circuit is walked in the connection on the PCB board.

In this embodiment, both the input terminal and the output terminal of the three-phase full bridge circuit are connected to the pins of the IPM, and are used as ports for connecting the IPM to an external circuit or a load.

It should be noted that each of the six power switches respectively corresponds to one gallium nitride high electron mobility transistor structure in at least one gallium nitride integrated group chip. Fig. 7 shows a circuit symbol schematic of a power switching device.

In a specific implementation, as shown in fig. 8, each gan hemt structure is for a group of G, D, S pads, and the pads of G, D, S are all on the same side of the chip. In this embodiment, the gan integrated group chip is mounted on the PCB, and at this time, the pad G, D, S of each gan hemt in the gan integrated group chip is located on a side of the chip away from the PCB, and is bound and connected with the corresponding pad on the PCB by using a lead (as shown in fig. 9), and forms a three-phase full-bridge circuit (as the three-phase full-bridge power transistor in fig. 8) by using a connection trace on the PCB. In this embodiment, the gan ic chip is mounted on the PCB of the original IPM device, and replaces the original IGBT or MOS transistor of the three-phase full-bridge circuit in the IPM device, while maintaining the original packaging process.

The gallium nitride integrated group chip 14 is shown on the left side in fig. 9, and the structure in which the pads (G pole, S pole, D pole) of the gallium nitride integrated group chip 14 are connected to the pads 17 on the PCB board 16 through the respective low-side leads 15 is shown on the right side of fig. 9.

The intelligent power module of this embodiment further includes: drive components (e.g., high-side drive 10, low-side drive 11) and/or protection components (e.g., protection, fault indication, etc. other components 12) that facilitate external controller driving and/or protecting the IPM, as shown in fig. 8;

the driving component and/or the protection component in this embodiment may be connected to the three-phase full-bridge circuit by pad electrodes on the PCB, respectively, and the connection relationship between the driving component and the protection component is not shown in the figure.

The driving component in the embodiment of the utility model is a topological circuit which ensures that the power switch device effectively realizes the switching action under the control of the switching control signal; the protection component generally refers to a topology circuit with functions of fault detection and protection such as overvoltage, overcurrent and overheat, and the protection component can transmit a detection signal to an IPM external MCU for related purposes. IPM is widely used in various electric and electronic fields such as motor drive, frequency converter, inverter, high-power supply, etc. In addition, in the specific implementation process of the present invention, the driving component may be integrated into the gan integrated package chip, as shown in fig. 15A to 15C, the high-end driver 10 and the low-end driver 11 are integrated into the gan integrated package chip, and the above-mentioned manner of setting the driving component may be adjusted according to actual needs, and this embodiment is not limited thereto.

The three-phase full-bridge circuit of the embodiment adopts the gallium nitride high electron mobility transistor structure as a power switch device to replace an IGBT or an MOS transistor in the prior art, and the gallium nitride high electron mobility transistor has no parasitic body diode, so that the reverse recovery loss is lower than that of the traditional IGBT or MOS transistor in the working process, and the IPM efficiency is favorably improved. A typical reverse recovery charge comparison showing MOS and GaN HEMTs is shown in fig. 14. The area of the shaded portion is the reverse recovery charge, and the smaller this charge, the smaller the reverse recovery loss.

Adopt gallium nitride high electron mobility transistor structure as power switch device among the three-phase full-bridge circuit of this embodiment to replace IGBT or MOS pipe among the prior art, usable current process equipment and ripe simple process effectively reduce the quantity of using at the inside routing of IPM, reduce processing cost.

In this embodiment, the gan hemt does not have a body diode, and thus the occupied volume of the gan ic chip is reduced, and the volume of the formed three-phase full bridge circuit is also very small, so that the volume of the IPM is reduced, and the power density is improved.

Example 2

The present embodiment is explained with respect to a three-phase full bridge circuit including three gallium nitride integrated grouped chips.

The three-phase full-bridge circuit in this embodiment includes three gan integrated dies being mounted on the PCB, each gan integrated die having a gan hemt structure integrated therein in a half-bridge form, as shown in fig. 10A, the gan integrated dies being packaged dies or unpackaged dies.

Each gallium nitride high electron mobility transistor structure in each gallium nitride integrated group chip corresponds to a G pole bonding pad, a D pole bonding pad and an S pole bonding pad, and the G pole bonding pad, the D pole bonding pad and the S pole bonding pad are all located on one surface, far away from the PCB, of the chip. All the connection pads of the chip are located on the same side of the chip.

Fig. 10A shows a schematic diagram of a three-phase full bridge circuit in embodiment 2, and in fig. 10A, G, S, D-pole bonding pads of each gallium nitride integrated group chip are bonded to corresponding bonding pad positions (shown as gray areas in fig. 10A and 10B) of a PCB board by leads.

Namely, the three half-bridge gallium nitride integrated group chips are directly welded at corresponding positions of the PCB through the normal assembly process, and then electrode pads on the gallium nitride integrated group chips are bound with corresponding pads on the PCB through leads and are connected together.

The upper end D utmost point of chip is organized in the gallium nitride of three half-bridge form binds through the lead wire, is connected to the pad on the PCB board, forms three-phase full-bridge circuit' S input 18a, and the lower extreme S utmost point of chip is organized in the gallium nitride of three half-bridge form binds through the lead wire, is connected to the pad on the PCB board, forms two 18b of input of three-phase full-bridge circuit.

Further, in fig. 10A and 10B, the S pole at the upper end and the D pole at the lower end of the gallium nitride integrated group chip in the form of half bridge are connected together inside the chip, and for this purpose, externally represented as a pad, which is connected to a corresponding pad on the PCB board by a lead wire, forming three output terminals 18c of the three-phase full bridge circuit. That is, the S-pole pad of the upper gan hemt structure and the D-pole pad of the lower gan hemt structure in each ic chip are connected inside the ic chip, that is, the S-pole pad of the upper gan hemt structure and the D-pole pad of the lower gan hemt structure in the ic chip prepared from one wafer are connected to each other, and thus, the two pads are externally represented by one pad.

As can be seen from fig. 10A and 10B, the number of the lead bonding wires of the three-phase full bridge circuit composed of 3 half-bridge type gallium nitride integrated group chips is 15, which is 3 less than 18 lead bonding wires of the three-phase full bridge circuit composed of the original 6 MOS or IGBT chips, and is reduced by 16%.

The input end and the output end of the three-phase full-bridge circuit and the connecting end used for being connected with an external circuit can be the pad electrode on the PCB.

Fig. 10E shows a schematic diagram of the interfaces of the input terminal, the output terminal, and the like of the three-phase full-bridge circuit after one gallium nitride chip is assembled in fig. 10A, and fig. 10E shows the input terminal one 18a, the input terminal two 18b, the high-side control terminal 18d, the low-side control terminal 18E, and the output terminal 18 c.

In addition, when the three-phase full-bridge circuit is applied to the IPM, the driving components and/or the protection components in the IPM may be connected to the three-phase full-bridge circuit by means of pad electrodes on the PCB board; and the input end and the output end of the three-phase full bridge circuit are connected to pins of the IPM and used as ports for connecting the IPM with external circuits or loads, as shown in FIG. 10B.

In this embodiment, a half-bridge gan hemt structure with excellent uniformity and superior vertical symmetry is used instead of a discrete IGBT or MOS fabricated on the same wafer. As shown in fig. 10C and 10D, the fast recovery diode connected in parallel to the IGBT or the MOS is thereby eliminated, thereby reducing the IPM volume, reducing the cost of the IPM, and better solving the process complexity of connecting the FRD into the IPM and improving the power density of the IPM in the prior art.

In addition, 3 pairs of gallium nitride high-electron-mobility transistor structures which are manufactured on the same wafer and have good consistency and symmetry are used in the IPM to replace discrete IGBTs or MOS, if two gallium nitride high-electron-mobility transistor structures in a half bridge are electrically connected (such as an upper D pole bonding pad and a lower S pole bonding pad), the number of bound leads can be effectively reduced, and therefore distributed parasitic parameters on connecting wires on a three-phase full-bridge circuit are reduced.

Example 3

The present embodiment is explained with respect to a three-phase full bridge circuit including two gallium nitride integrated grouped chips.

The three-phase full-bridge circuit in this embodiment includes two gan integrated chips mounted on the PCB, and each gan integrated chip has three gan hemt structures integrated therein, as shown in fig. 11A, the gan integrated chip may be in the form of an unpackaged bare chip, wherein one gan integrated chip is used as the high-side power switch of the three-phase full-bridge circuit, and the other gan integrated chip is used as the low-side power switch of the three-phase full-bridge circuit.

Fig. 11A shows a schematic diagram of a three-phase full-bridge circuit in embodiment 3, all pads of each gallium nitride integrated group chip are located on the same face of the chip, and are located on the same face far away from the PCB board in the three-phase full-bridge circuit, i.e., are being mounted on the PCB board.

An S pole bonding pad of a gallium nitride high electron mobility transistor structure in an integrated group chip used as a high-end power switch of the three-phase full-bridge circuit is connected in the integrated group chip and then is connected to a bonding pad on a PCB through a lead wire to form a first input end of the three-phase full-bridge circuit; the D-pole pad of the gan hemt structure used as the power switch of the low-side of the three-phase full-bridge circuit is connected in the integrated chip, and then connected to the pad on the PCB by a lead to form the second input terminal of the three-phase full-bridge circuit, as shown in fig. 11B.

In fig. 11B, the gan of the upper end switch device or the lower end switch device of 2 three-phase full-bridge circuits are integrated into a group of chips, and the bottom substrate is directly welded to the corresponding position of the PCB (aluminum substrate or ceramic substrate) by the normal assembly process. And electrode pads on the gallium nitride integrated group chip and corresponding pads on the PCB are bound and connected together through leads.

As shown in fig. 11B, the number of the gallium nitride integrated group chips by the upper end switching device or the lower end switching device of 2 three-phase full-bridge circuits needs 14 leads, which is 4 less than 18 leads of the three-phase full-bridge circuit composed of the original 6 MOS or IGBT chips, and is reduced by 22%.

In addition, when the three-phase full-bridge circuit is applied to the IPM, the driving component and/or the protection component in the IPM can be connected with the three-phase full-bridge circuit by means of the pad electrode on the PCB board; and the input end and the output end of the three-phase full bridge circuit are connected to pins of the IPM and are used as ports for connecting the IPM with an external circuit or a load. As shown in fig. 11C, a schematic diagram of two gan ics replacing MOS transistors, and as shown in fig. 11D, a schematic diagram of two gan ics replacing IGBTs.

Example 4

The present embodiment is described with respect to a three-phase full bridge circuit including one gallium nitride integrated group chip.

The three-phase full-bridge circuit in this embodiment includes a gan integrated group chip mounted on the PCB, and six gan hemt structures are integrated inside each gan integrated group chip, as shown in fig. 12A, the gan integrated group chip may be in the form of a packaged chip or an unpackaged bare chip.

In this embodiment, the connection pads corresponding to all the gan hemt structures in the chip are located on the same surface of the chip, and when the chip is mounted on the PCB, all the connection pads of the chip are located on a surface of the chip away from the PCB.

Fig. 12A is a schematic diagram of a three-phase full bridge circuit in embodiment 4, in which a D-pole pad of each gan hemt structure at the upper end of an ic chip may be connected to the ic chip, and then connected to a pad on a PCB by a lead to form a first input terminal of the three-phase full bridge circuit, and an S-pole pad of each gan hemt structure at the lower end of the ic chip may be connected to the ic chip, and then connected to a pad on the PCB by a lead to form a second input terminal of the three-phase full bridge circuit. For the upper end, the D-poles of the 3 gan transistor structures are already connected together inside the chip, so the pad appears to be a pad.

In addition, as shown in fig. 12B, 1 gan integrated grouped chip integrated with a three-phase full bridge circuit requires 11 lead bonding wires, which is 7 fewer than 18 lead bonding wires of the original three-phase full bridge circuit composed of 6 MOS or IGBT chips, and is reduced by 38%.

That is, when the ic chip is being mounted on the PCB, the input terminal, the output terminal, and the connecting terminal for connecting to the external circuit of the three-phase full bridge circuit are all pad electrodes on the PCB.

In addition, when the three-phase full-bridge circuit is applied to the IPM, the driving component and/or the protection component in the IPM can be connected with the three-phase full-bridge circuit by means of the pad electrode on the PCB board; and the input end and the output end of the three-phase full bridge circuit can be connected to pins of the IPM to be used as ports for connecting the IPM with external circuits or loads. Further, as shown in fig. 12C, an output terminal 18C for connecting a load such as a motor in the IPM is shown in fig. 12C.

Fig. 12D shows a schematic diagram of a gan ic chip instead of the MOS transistor, and fig. 12E shows a schematic diagram of a gan ic chip instead of the IGBT.

Example 5

The present embodiment is explained with respect to a three-phase full bridge circuit including six gallium nitride integrated grouped chips.

The three-phase full-bridge circuit in this embodiment includes six gan integrated chips mounted on the PCB, and each gan integrated chip has a single gan hemt structure integrated therein, as shown in fig. 16A, and the gan integrated chips may be packaged chips or unpackaged bare chips.

Fig. 16A shows a schematic diagram of a three-phase full-bridge circuit in embodiment 5, after the D-pole pad of each gallium nitride hemt structure at the upper end of the integrated package chip is connected to the pad on the PCB board through respective leads, the D-pole pad is connected through the inner trace of the PCB board to form a first input end of the three-phase full-bridge circuit, and after the S-pole pad of each gallium nitride hemt structure at the lower end is connected to the pad on the PCB board through respective leads, the S-pole pad is connected through the inner trace of the PCB board to form a second input end of the three-phase full-bridge circuit.

When the integrated chip is arranged on the PCB, the input end and the output end of the three-phase full-bridge circuit and the connecting end used for being connected with an external circuit are all the pad electrodes on the PCB.

In addition, when the three-phase full-bridge circuit is applied to the IPM, the driving component and/or the protection component in the IPM can be connected with the three-phase full-bridge circuit by means of the pad electrode on the PCB board; and the input end and the output end of the three-phase full bridge circuit can be connected to pins of the IPM to be used as ports for connecting the IPM with external circuits or loads.

Fig. 16B shows a schematic diagram of a gan ic chip instead of the MOS transistor, and fig. 16C shows a schematic diagram of a gan ic chip instead of the IGBT.

In this embodiment, 6 gan chips are integrated into a group, and the substrate is directly welded to a corresponding position of a PCB (aluminum substrate or ceramic substrate) by a normal mounting process. And the electrode bonding pads on the chip and the corresponding bonding pads on the PCB are bound and connected together through leads.

The D utmost point of upper end is connected to the pad that corresponds on the PCB board through the lead wire, forms the input 1 of three-phase full-bridge, and in the same way, the S utmost point of lower extreme can form the input 2 of three-phase full-bridge.

Or, in another implementation manner, the 3D poles of the upper-end switching device and the three S poles of the lower end of the three-phase full-bridge circuit are bound by the lead wires and connected to the corresponding pads on the PCB board to form the output 1, the output 2 and the output 3 of the three-phase full-bridge circuit respectively.

As shown in fig. 16A, the number of the bonding wires of the three-phase full-bridge circuit composed of 6 gan integrated grouped chips is 18, and although the number of the bonding wires of the three-phase full-bridge circuit is consistent with the number of the 18 bonding wires of the three-phase full-bridge circuit composed of the original 6 MOS or IGBT chips, 6 fast recovery diodes are omitted, the area of the PCB board is reduced, and thus the size of the IPM is minimized and the integration level of the IPM is increased.

Example 6

The circuit symbol of the gan hemt structure in each of the gan integrated chiplets of embodiments 2-5 is shown in fig. 13A, and the gan hemt structure can be a single gan hemt without connection of FRD. Fig. 13A corresponds to fig. 7(a), and in order to better explain the present embodiment, fig. 13A is provided separately.

In an alternative implementation manner, each of the gallium nitride integrated package chips in embodiments 2 to 5 further includes a driving circuit for driving the internal gallium nitride high-electron-mobility transistor structure, and each of the gallium nitride high-electron-mobility transistor structures inside the gallium nitride integrated package chip corresponds to one driving circuit, as shown in fig. 13B. That is, each of the gan hemt structures and the corresponding driving circuits in the gan integrated group of chips are formed during the wafer fabrication process. Fig. 13C shows a schematic diagram of a three-phase full bridge circuit in which three gan ic chips in a half-bridge form with a driving circuit are being mounted on a PCB, and fig. 13D shows a schematic diagram of a three-phase full bridge circuit in which one gan ic chip in a full-bridge form with a driving circuit is being mounted on a PCB. If the gan ic chip of fig. 13C is used in the IPM, the corresponding IPM is schematically illustrated in fig. 15A without a separate driving component. Alternatively, as shown in fig. 13D, the structure of the corresponding IPM is as shown in fig. 15C. Fig. 13E and 13F show that each of the gan hemt structures in the gan integrated group dies may be composed of a plurality of gan hemt structures connected in parallel, and the present embodiment is not limited to the formation manner of each of the gan hemt structures in each of the gan integrated group dies, and one or more parallel substructure structures may be selected according to actual needs.

The GaN HEMT is used for replacing an IGBT or an MOS in the IPM, and because the GaN HEMT has no reverse recovery loss, the switching speed is higher than that of the IGBT or the MOS with similar specification, the IPM switching speed is favorably improved, and when the GaN HEMT is applied to a motor driving system, the precision of inverting a three-phase sine wave can be improved, the harmonic wave is reduced, and the heat generation of a motor winding is reduced.

In a fifth alternative implementation, the gallium nitride hemt structure in any of the gallium nitride integrated dies described above may be formed by a plurality of transistor structures connected in parallel.

Advantages of using an integrated package chip in half-bridge or full-bridge form:

1. by using 3 special integrated gallium nitride integrated chips in a half-bridge form and replacing 6 mutually independent IGBTs or MOS in a three-phase full-bridge circuit in the original silicon IPM in a forward mounting mode, the PCB of the original silicon IPM device is only re-wired without changing the process of the original packaging production line, the step number of the process of a plurality of original packaging production lines is simplified and reduced, the production efficiency and the yield of the production line are improved, and the third-generation semiconductor gallium nitride IPM with excellent performance is produced.

2. 6 mutually independent IGBTs or MOS in the original IPM circuit are replaced by the integrated gallium nitride cluster chip in a full-bridge form, and the novel third-generation semiconductor gallium nitride IPM with high integration level, high power density, high energy efficiency and high reliability is realized by using the excellent performance of a gallium nitride power device through a driving circuit.

3. The connection between the upper gallium nitride high-electron-mobility transistor structure and the lower gallium nitride high-electron-mobility transistor structure inside the half-bridge or full-bridge integrated group chip is directly realized on a wafer of the chip, and compared with the connection of a PCB (printed Circuit Board), the parasitic inductance is smaller, and the IPM performance is favorably improved.

4. If the GaN HEMT half-bridge or full-bridge with the drive is used, the integration level is higher, so that the area of SIP packaging is smaller, and meanwhile, the GaN drive is provided, and the GaN HEMT half-bridge or full-bridge with the drive is very convenient to be connected with an IPM signal drive circuit.

In addition, the advantages of the present invention are explained as follows:

1) the GaN HEMT is used for replacing an IGBT or an MOS in the IPM, and the GaNHEMT does not need to be connected with diodes in parallel when being used in the IPM due to the special reverse characteristic of the GaN HEMT, so that the cost of 6 diodes is saved, the volume of the IPM after packaging is reduced, the process complexity of IPM production is reduced, meanwhile, the loss of the diodes in the switching process is reduced, and the energy conversion efficiency, the integration level and the power density of the IPM are improved.

2) By utilizing the characteristic that the GaN HEMT electrode is positioned on the same plane, no matter a silicon-based or other gallium nitride chips such as sapphire and the like are directly and normally mounted on an aluminum substrate or a PCB of a ceramic substrate, which is beneficial to direct heat dissipation of a power chip; in addition, the conduction resistance of the gallium nitride chip is smaller than that of an IGBT or an MOS, and a backward diode is not arranged, so that the generated heat is reduced, and the integral heat dissipation of the IPM is enhanced fundamentally.

3) In the IPM, a highly integrated gallium nitride integrated group chip is used for replacing an IGBT or an MOS, so that the number of switch device chips of the original silicon IPM is reduced from 12 to 6, 3, 2 and 1, the integration level is improved, the IPM volume is greatly reduced, the lead bonding between the chips is reduced (the reduction ratio can reach 38 percent at most), the parasitic parameter influence of the IPM is reduced, and the reliability of the IPM is improved. And secondly, the material and the times of lead binding are reduced, so that the process is simplified, and the production cost is reduced.

4) Through the integrated drive part of the gallium nitride integrated group chip, the level conversion function of level drive signal PWM can be realized besides the generation of the drive signal of the power chip, and the direct replacement of an IGBT or MOSFET and a drive component part in the IPM of the original silicon power device can be realized, so that the influence of distribution parameters and the IPM packaging volume are reduced, and the anti-interference, stability and power density are improved.

The embodiment of the utility model provides an adopt the PCB description in some embodiments, adopt the PCB board description in some embodiments, it stands for the meaning the same, all is the PCB board of realizing that three-phase full-bridge circuit connects the line. The pad/pad electrode on the PCB board means the same.

It should also be noted that the exemplary embodiments mentioned in the present disclosure describe some methods or systems based on a series of steps or devices. However, the present invention is not limited to the order of the above steps, that is, the steps may be performed in the order mentioned in the embodiments, may be performed in a different order from the embodiments, or may be performed simultaneously.

The above embodiments may be referred to each other, and the present embodiment does not limit the embodiments.

Finally, it should be noted that: the above-mentioned embodiments are only used for illustrating the technical solution of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention.

Claims

1. A three-phase full bridge circuit of a gallium nitride chip, comprising: 6 power switch device and provide the PCB board of three-phase full-bridge circuit connection line between 6 power switch device, its characterized in that, 6 power switch device adopt at least one gallium nitride to integrate group chip and form, at least one gallium nitride is integrated to be adorned the chip is just adorned on the PCB board.

2. The three-phase full-bridge circuit according to claim 1, wherein said at least one gan ic chip is mounted on said PCB board, comprising:

3. The three-phase full-bridge circuit according to claim 1, wherein: each of the 6 power switches respectively corresponds to one of the gallium nitride high electron mobility transistor structures in the at least one gallium nitride integrated group chip.

4. A three-phase full-bridge circuit according to any one of claims 1 to 3, wherein:

the three-phase full-bridge circuit comprises six gallium nitride integrated group chips which are arranged on the PCB, a single gallium nitride high-electron-mobility transistor structure is integrated in each gallium nitride integrated group chip, and the gallium nitride integrated group chips are packaged chips or unpackaged bare chips;

or,

the three-phase full-bridge circuit comprises three gallium nitride integrated group chips which are arranged on the PCB, wherein a gallium nitride high electron mobility transistor structure in a half-bridge mode is integrated in each gallium nitride integrated group chip, and the gallium nitride integrated group chips are packaged chips or unpackaged bare chips;

or,

the three-phase full-bridge circuit comprises two gallium nitride integrated group chips which are arranged on the PCB, three gallium nitride high-electron-mobility transistor structures are integrated in each gallium nitride integrated group chip, the gallium nitride integrated group chips are packaged chips or unpackaged bare chips, one gallium nitride integrated group chip is used as a power switch at the high end of the three-phase full-bridge circuit, and the other gallium nitride integrated group chip is used as a power switch at the low end of the three-phase full-bridge circuit;

or,

5. The three-phase full-bridge circuit according to claim 4, wherein:

the input end and the output end of the three-phase full-bridge circuit and the connecting end used for being connected with an external circuit are all the pad electrodes on the PCB.

6. The three-phase full-bridge circuit according to claim 4, wherein:

the gallium nitride integrated component chip also comprises a driving circuit used for driving the internal gallium nitride high-electron-mobility transistor structure, and each gallium nitride high-electron-mobility transistor structure inside the gallium nitride integrated component chip corresponds to one driving circuit.

7. An intelligent power module of gallium nitride chip, characterized in that the three-phase full bridge circuit in the intelligent power module adopts the three-phase full bridge circuit of any one of the above claims 1 to 6.

8. The smart power module of claim 7,

the smart power module further includes: a driving component and/or a protection component facilitating driving and/or protecting the smart power module by an external controller;