CN109768039A - A kind of two-side radiation power module - Google Patents
A kind of two-side radiation power module Download PDFInfo
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- CN109768039A CN109768039A CN201811545552.5A CN201811545552A CN109768039A CN 109768039 A CN109768039 A CN 109768039A CN 201811545552 A CN201811545552 A CN 201811545552A CN 109768039 A CN109768039 A CN 109768039A
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- 230000005855 radiation Effects 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000002184 metal Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 230000005611 electricity Effects 0.000 claims description 8
- 230000003071 parasitic effect Effects 0.000 abstract description 7
- 230000005669 field effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000009514 concussion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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Abstract
A kind of two-side radiation power module, comprising: the first power electrode, the second power electrode, output electrode, the first insulating substrate, the second insulated substrate, the first bridge arm conductive layer for being arranged on the first insulating substrate and being electrically connected with the first power electrode, multiple first bridge arm power chip groups, the second bridge arm conductive layer, multiple second bridge arm power chip groups, multiple first bridge arm auxiliary conductive layers, multiple second bridge arm auxiliary conductive layers, multiple first bridge arms the bridging conductive layer, the second power electrode conductive layer being arranged on the second insulated substrate；Each first bridge arm power chip is electrically connected with the first adjacent bridge arm auxiliary conductive layer, first bridge arm auxiliary conductive layer bridges conductive layer by corresponding first bridge arm and is electrically connected with the second bridge arm conductive layer, second bridge arm power chip is electrically connected with the second adjacent auxiliary conductive layer, and each second bridge arm auxiliary conductive layer is electrically connected by the second power electrode conductive layer with the second power electrode.Compared with prior art, there is lower parasitic inductance.
Description
Technical field
The present invention relates to field of power electronics, and in particular to a kind of two-side radiation power module.
Background technique
Power module is power electronic electrical device such as metal-oxide semiconductor (MOS) (power MOS pipe), insulated-gate type field effect
It answers transistor (IGBT), the power switch module that fast recovery diode (FRD) is combined and packaged by certain function is mainly used
In electric car, wind-power electricity generation, the power conversion under the various occasions such as industrial frequency conversion.
The motor-drive circuit of electric car generally includes three groups of power modules for being respectively provided with upper and lower bridge arm, and Fig. 1 is existing
A kind of circuit diagram for the power module having shows the circuit signal of one group of power module with upper and lower bridge arm
Figure comprising: as the insulated-gate type field effect transistor Z1 of upper bridge arm, and the fast recovery diode with its reverse parallel connection
D1, as the insulated-gate type field effect transistor Z2 of lower bridge arm, and the fast recovery diode D2 with its reverse parallel connection, wherein absolutely
The positive p+ of the collector connection power module of edge grid-type field effect transistor Z1, emitter connect edge grid-type field effect transistor
The collector of pipe Z2, the cathode p- of the emitter connection power module of edge grid-type field effect transistor Z2, insulated-gate type field effect
The emitter of transistor Z1 and the collector of Z2 connect the output terminal of power module jointly.In practical applications, usually used
Three groups of power modules provide three-phase alternating current for motor；It is only illustrated with the circuit diagram of one group of power module herein
Working principle: when insulated-gate type field effect transistor Z1 is connected, the electric current successively positive p+ through power module, insulated-gate type field
Collector, emitter, the power module output terminal OUTPUT of effect transistor Z1 is exported to motor；Work as insulated-gate type field effect
When transistor Z1 is turned off, since motor is inductive load, to guarantee that current direction is constant, freewheel current need to be through other groups of power
Cathode p-, diode D2, power module output terminal OUTPUT of the module through the power module are exported to motor.
Under the application of certain smaller powers, the electronic device in power module can also use power MOS pipe, and Fig. 2 is
Another circuit diagram of power MOS pipe module comprising: as the power MOS pipe M1 of upper bridge arm, as the function of lower bridge arm
The positive p+ of the drain electrode connection power module of rate metal-oxide-semiconductor M2, wherein power MOS pipe M1, the source electrode of power MOS pipe M1 connect power
The drain electrode of metal-oxide-semiconductor M2, the cathode p- of the source electrode connection power module of power MOS pipe M2, the source electrode and power of power MOS pipe M1
The drain electrode of metal-oxide-semiconductor M2 connects the output terminal of power module, working principle and use insulated-gate type field effect crystal jointly
The module of pipe is similar, and the difference between both essentially consists in backward dioded built in power MOS pipe, therefore does not need in parallel anti-
To diode.In addition, inverse conductivity type IGBT and power MOS has identical structure and function, due to diode-built-in, it is not required to reversely simultaneously
Union II pole pipe, module design and structure are similar to power MOS, and details are not described herein.
Power module generally comprises at least one half-bridge structure, and the half-bridge structure is by two bridge arms and to for power mould
First power electrode of block conduction electric current, the second power electrode, output electrode are composed, the first power electrode, the second power
Electrode and output electrode are connected with conductive layer corresponding in power module, to realize half-bridge circuit function；In practical applications,
Parasitic inductance is all the main bugbear that needs to overcome in power electronic device application all the time, especially in high frequency and high-power
Application.The parasitic inductance of inside modules will cause the overvoltage in turn off process, and parasitic parameter will cause power module
Waveform concussion in switching process, to increase electromagnetic interference and switching loss.
Summary of the invention
The present invention to solve problems of the prior art, provides a kind of two-side radiation power module, comprising: the first function
Rate electrode, the second power electrode, output electrode, the first insulating substrate, the second insulation base with the stacking setting of the first insulating substrate
Plate, is arranged in the first bridge arm the first bridge arm conductive layer for being arranged on the first insulating substrate and being electrically connected with the first power electrode
Multiple first bridge arm power chip groups on conductive layer, second for being arranged on the first insulating substrate and being electrically connected with output electrode
Bridge arm conductive layer, is respectively provided at each first bridge arm at the multiple second bridge arm power chip groups being arranged on the second bridge arm conductive layer
Multiple first bridge arm auxiliary conductive layers of the side of power chip group are respectively provided at the more of each second bridge arm power chip group side
A second bridge arm auxiliary conductive layer, multiple first bridge arms being arranged on the second insulated substrate bridging conductive layer, the second power electricity
Pole conductive layer；Wherein, each first bridge arm power chip is electrically connected with the first adjacent bridge arm auxiliary conductive layer, and each first bridge arm is auxiliary
Assistant director of a film or play's electric layer bridges conductive layer by corresponding first bridge arm and is electrically connected with the second bridge arm conductive layer, each second bridge arm power chip
It is electrically connected with the second adjacent auxiliary conductive layer, each second bridge arm auxiliary conductive layer passes through the second power electrode conductive layer and second
Power electrode electrical connection.
Further, the power module further includes the first bridge arm conductive column and bridging conductive column, the first bridge arm conductive column
It is connected between the first bridge arm auxiliary conductive layer and the first bridge arm bridging conductive layer, bridging conductive column is connected to the bridging of the first bridge arm
Between conductive layer and the second bridge arm conductive layer.
Further, the power module further includes the second bridge arm conductive column, and the second bridge arm conductive column is connected to the second bridge
Between arm auxiliary conductive layer and the second power electrode conductive layer.
Further, the first bridge arm power chip in each group passes through binding line respectively and the first adjacent bridge arm is auxiliary
The electrical connection of assistant director of a film or play's electric layer.
Further, the second bridge arm power chip in each group passes through binding line respectively and the second adjacent bridge arm is auxiliary
The electrical connection of assistant director of a film or play's electric layer.
Further, the power module further includes being set on the first insulating substrate to control with the first bridge arm power chip
The second bridge arm function that the first bridge arm power chip control conductive layer of end electrical connection, the second bridge arm power chip control terminal are electrically connected
Rate chip controls conductive layer.
Further, the first bridge arm power chip, the second bridge arm power chip include power MOS pipe and it is reversed simultaneously
Union II pole pipe.
Further, the bridge arm power chip, the second bridge arm power chip include two pole IGBT and reverse parallel connection
Pipe.
Further, the first power electrode includes the first power electrode main body and the first power electrode first connecting portion, the
Two power electrodes include the second power electrode main body and the second power electrode first connecting portion, and the first power electrode main body passes through the
One power electrode first connecting portion is electrically connected with the first bridge arm conductive layer, and the second power electrode main body passes through the second power electrode the
One interconnecting piece is electrically connected with the second power electrode conductive layer, and the first power electrode main body and the second power electrode main body are sheet
And stacking is spaced apart, the first power electrode main body, which is equipped with, to be extended along first direction to outside power module, and exceeds the second power
The first power electrode second connecting portion at electrode body edge；Second power electrode main body is equipped with to extend outwardly from its side, and
The second power electrode second connecting portion beyond the first power electrode body rim.
Further, the first power electrode second connecting portion and the second power electrode second connecting portion be equipped with to
The fixed connecting hole with bolt cooperation.
Further, the first power electrode second connecting portion includes second connecting portion main body, and is connected from second
The outwardly extending second auxiliary interconnecting piece in portion side, the connecting hole setting is on the second auxiliary interconnecting piece.
Further, the first power electrode second connecting portion is sheet metal, the sheet metal and the first power electrode main body one
It is body formed, first the first connecting hole of power electrode and first the second connecting hole of power electrode are provided on sheet metal；Second power
Electrode second connecting portion is the two panels sheet metal extended from two opposite sides of the second power electrode main body, the two panels metal
Piece is each provided with second the first connecting hole of power electrode and second the second connecting hole of power electrode.
A kind of two-side radiation power module provided by the invention, comprising: the first power electrode, the second power electrode, output
Electrode, the first insulating substrate, with the first insulating substrate stacking setting the second insulated substrate, be arranged on the first insulating substrate and
The first bridge arm conductive layer being electrically connected with the first power electrode, the multiple first bridge arm power being arranged on the first bridge arm conductive layer
Chipset, is arranged in the second bridge arm the second bridge arm conductive layer for being arranged on the first insulating substrate and being electrically connected with output electrode
Multiple second bridge arm power chip groups on conductive layer, be respectively provided at each first bridge arm power chip group side multiple first
Bridge arm auxiliary conductive layer, the multiple second bridge arm auxiliary conductive layers for being respectively provided at each second bridge arm power chip group side, setting
Multiple first bridge arms on the second insulated substrate bridge conductive layer, the second power electrode conductive layer；Wherein, each first bridge arm function
Rate chip is electrically connected with the first adjacent bridge arm auxiliary conductive layer, and each first bridge arm auxiliary conductive layer passes through corresponding first bridge arm
Bridging conductive layer is electrically connected with the second bridge arm conductive layer, and each second bridge arm power chip is electrically connected with the second adjacent auxiliary conductive layer
It connects, each second bridge arm auxiliary conductive layer is electrically connected by the second power electrode conductive layer with the second power electrode.With the prior art
It compares, there is lower parasitic inductance.
Detailed description of the invention
Fig. 1 is a kind of circuit diagram of existing power module；
Fig. 2 is the circuit diagram of existing another power module；
Fig. 3 is a kind of flat deployable structure figure of two-side radiation power module embodiment provided by the invention；
Fig. 4 is that structure chart is cutd open in a kind of side of two-side radiation power module embodiment provided by the invention；
Fig. 5 is a kind of three-dimensional structure diagram of two-side radiation power module embodiment provided by the invention；
Fig. 6 is a kind of two-side radiation power module embodiment electrode structural chart provided by the invention.
Specific embodiment
The embodiment of the present invention is described in detail with reference to the accompanying drawing, it should be understood that specific implementation described herein
Example is only used to explain the present invention, is not intended to limit the present invention.
A kind of two-side radiation power module as shown in Figures 1 to 6, comprising: the first power electrode 100, the second power electricity
Pole 200, output electrode 11, the first insulating substrate 12, the second insulated substrate 13 being stacked with the first insulating substrate 12, setting
The first bridge arm conductive layer 14 for being electrically connected on the first insulating substrate 12 and with the first power electrode 100 is arranged in the first bridge arm
Multiple first bridge arm power chip groups, setting on conductive layer 14 are electrically connected on the first insulating substrate 12 and with output electrode 11
The second bridge arm conductive layer 18, be arranged on the second bridge arm conductive layer 18 multiple second bridge arm power chip groups, be respectively provided at
Multiple first bridge arm auxiliary conductive layers 16 of the side of each first bridge arm power chip group are respectively provided at each second bridge arm power core
Multiple second bridge arm auxiliary conductive layers 17 of piece group side, multiple first bridge arms being arranged on the second insulated substrate 13 bridging are led
Electric layer 22, the second power electrode conductive layer 24；Wherein, each first bridge arm power chip 15 and the first adjacent bridge arm additional conductive
Layer 16 is electrically connected, and each first bridge arm auxiliary conductive layer 16 bridges conductive layer 22 by corresponding first bridge arm and the second bridge arm is conductive
Layer 18 is electrically connected, and each second bridge arm power chip 19 is electrically connected with the second adjacent auxiliary conductive layer 17, each second bridge arm auxiliary
Conductive layer 17 is connect by the second power electrode conductive layer 24 with the second power electrode electricity 200.
Specifically, as shown in figure 4, in certain embodiments, the power module further includes 25 He of the first bridge arm conductive column
Conductive column 26 is bridged, the first bridge arm conductive column 25 is connected to the first bridge arm auxiliary conductive layer 16 and the first bridge arm bridging conductive layer 22
Between, bridging conductive column 26 is connected between the first bridge arm bridging conductive layer 22 and the second bridge arm conductive layer 18.
Specifically, in certain embodiments, the power module further includes the second bridge arm conductive column 27, and the second bridge arm is conductive
Column 27 is connected between the second bridge arm auxiliary conductive layer 17 and the second power electrode conductive layer 24.
Specifically, as shown in figure 3, in certain embodiments, the first bridge arm power chip 15 in each group leads to respectively
Binding line is crossed to be electrically connected with the first adjacent bridge arm auxiliary conductive layer 16.
Specifically, as shown in figure 3, in certain embodiments, the second bridge arm power chip 19 in each group leads to respectively
Binding line is crossed to be electrically connected with the second adjacent bridge arm auxiliary conductive layer 17.
Specifically, as shown in figure 3, in certain embodiments, the power module further includes being set to the first insulating substrate
Upper the first bridge arm power chip the control conductive layer 20, the second bridge arm power core being electrically connected with the first bridge arm power chip control terminal
Second bridge arm power chip of piece control terminal electrical connection controls conductive layer 21.To conduct control the first bridge arm power chip and
The control signal of second bridge arm power chip turn-on and turn-off.
Specifically, in certain embodiments, the first bridge arm power chip, the second bridge arm power chip include power
Metal-oxide-semiconductor and anti-parallel diodes.
Specifically, in certain embodiments, the bridge arm power chip, the second bridge arm power chip include IGBT and
Anti-parallel diodes.
Specifically, as shown in figure 5, in certain embodiments, the first power electrode includes 101 He of the first power electrode main body
First power electrode first connecting portion 102, the second power electrode include the second power electrode main body 201 and the second power electrode the
One interconnecting piece 202, the first power electrode main body 101 pass through the first power electrode first connecting portion 102 and the first bridge arm conductive layer
14 electrical connections, the second power electrode main body 201 pass through the second power electrode first connecting portion 202 and the second power electrode conductive layer
24 electrical connections, the first power electrode main body 101 and the second power electrode main body 201 are sheet and stacking is spaced apart, and first
Power electrode main body 101, which is equipped with, to be extended along first direction to outside power module, and beyond 201 edge of the second power electrode main body
First power electrode second connecting portion 103；Second power electrode main body 201 is equipped with to extend outwardly from its side, and exceeds first
The second power electrode second connecting portion 203 at 101 edge of power electrode main body.In a particular application, the first power electrode main body,
First power electrode first connecting portion, the first power electrode second connecting portion, generally use piece of metal piece through over mechanical processing
It is made into integration, can also be made according to the actual needs of multi-sheet structure connection；Second power electrode main body, the second power electricity
Pole first connecting portion, the second power electrode second connecting portion, generally use piece of metal piece and are made into integration through over mechanical processing, also
It can be made according to the actual needs of multi-sheet structure connection；Wherein, the side of the second power electrode main body, with first direction
For referring to definition, i.e. the part of the second power electrode main body two sides in a first direction can be referred to as the second power electrode main body
Side.Using the embodiment, the parasitic inductance of power electrode can be further decreased.
Specifically, in certain embodiments, the first power electrode second connecting portion 103 and the second power electrode second
Interconnecting piece 203 is equipped with to the connecting hole fixed with bolt cooperation.
Specifically, as shown in fig. 6, in certain embodiments, the first power electrode second connecting portion 103 includes second
Interconnecting piece main body, and from the outwardly extending second auxiliary interconnecting piece in second connecting portion side, the connecting hole is arranged second
It assists on interconnecting piece.Second auxiliary interconnecting piece is two gold stretched along the first power module second connecting portion main body side direction extension
Belong to piece 1033a, 1034b, the connecting hole setting is on the second auxiliary interconnecting piece.
Specifically, in certain embodiments, the first power electrode second connecting portion 103 is sheet metal, the sheet metal and the
One power electrode main body is integrally formed, and is provided with first power electrode the first connecting hole 1031 and the first power electrode on sheet metal
Second connecting hole 1032；Second power electrode second connecting portion is to extend from two opposite sides of the second power electrode main body
Two panels sheet metal, which is each provided with second power electrode the first connecting hole 2031 and the second power electrode second
Connecting hole 2032.
A kind of two-side radiation power module provided by the invention, comprising: the first power electrode 100, the second power electrode
200, output electrode 11, the first insulating substrate 12, the second insulated substrate 13 being stacked with the first insulating substrate 12, setting exist
The first bridge arm conductive layer 14 for being electrically connected on first insulating substrate 12 and with the first power electrode 100, setting are led in the first bridge arm
Multiple first bridge arm power chip groups in electric layer 14 are arranged on the first insulating substrate 12 and are electrically connected with output electrode 11
Second bridge arm conductive layer 18, the multiple second bridge arm power chip groups being arranged on the second bridge arm conductive layer 18 are respectively provided at respectively
Multiple first bridge arm auxiliary conductive layers 16 of the side of first bridge arm power chip group are respectively provided at each second bridge arm power chip
Multiple second bridge arm auxiliary conductive layers 17 of group side, the multiple first bridge arms bridging being arranged on the second insulated substrate 13 are conductive
The 22, second power electrode conductive layer 24 of layer；Wherein, each first bridge arm power chip 15 and the first adjacent bridge arm auxiliary conductive layer
16 electrical connections, each first bridge arm auxiliary conductive layer 16 bridge conductive layer 22 and the second bridge arm conductive layer by corresponding first bridge arm
18 electrical connections, each second bridge arm power chip 19 are electrically connected with the second adjacent auxiliary conductive layer 17, and each second bridge arm auxiliary is led
Electric layer 17 is connect by the second power electrode conductive layer 24 with the second power electrode electricity 200.When work, when power module work exists
When drive current state, driving current is flowed into from the first power electrode, followed by the first bridge arm conductive layer 14, the first bridge arm function
Rate chip 15, the first bridge arm auxiliary conductive layer 16, the first bridge arm bridging conductive layer 22, the second bridge arm conductive layer 18, flow out to it is defeated
Electrode out；When power module work is in freewheeling state, freewheel current is flowed into from the second power electrode, followed by second electrode
Conductive layer 24, the second bridge arm auxiliary conductive layer 17, the second bridge arm power chip 19, the second bridge arm conductive layer 18 flow out to output electricity
Pole.Compared with prior art, there is lower parasitic inductance.
The above description is only a preferred embodiment of the present invention, is not intended to limit the scope of the invention, all utilizations
Equivalent structure or equivalent flow shift made by description of the invention and accompanying drawing content is applied directly or indirectly in other correlations
Technical field, be included within the scope of the present invention.
Claims (12)
1. a kind of two-side radiation power module characterized by comprising the first power electrode, the second power electrode, output electricity
Pole, the first insulating substrate, with the first insulating substrate stacking setting the second insulated substrate, be arranged on the first insulating substrate and with
First bridge arm conductive layer of the first power electrode electrical connection, the multiple first bridge arm power cores being arranged on the first bridge arm conductive layer
Piece group, the second bridge arm conductive layer for being arranged on the first insulating substrate and being electrically connected with output electrode, setting are led in the second bridge arm
Multiple second bridge arm power chip groups in electric layer, be respectively provided at each first bridge arm power chip group side multiple first bridges
Arm auxiliary conductive layer, the multiple second bridge arm auxiliary conductive layers for being respectively provided at each second bridge arm power chip group side, setting exist
Multiple first bridge arms on the second insulated substrate bridge conductive layer, the second power electrode conductive layer；Wherein, each first bridge arm power
Chip is electrically connected with the first adjacent bridge arm auxiliary conductive layer, each first bridge arm auxiliary conductive layer by corresponding first bridge arm across
It connects conductive layer to be electrically connected with the second bridge arm conductive layer, each second bridge arm power chip is electrically connected with the second adjacent auxiliary conductive layer
It connects, each second bridge arm auxiliary conductive layer is electrically connected by the second power electrode conductive layer with the second power electrode.
2. power module according to claim 1, which is characterized in that further include that the first bridge arm conductive column and bridging are conductive
Column, the first bridge arm conductive column are connected between the first bridge arm auxiliary conductive layer and the first bridge arm bridging conductive layer, bridge conductive column
It is connected between the first bridge arm bridging conductive layer and the second bridge arm conductive layer.
3. power module according to claim 1, which is characterized in that further include the second bridge arm conductive column, the second bridge arm is led
Electric column is connected between the second bridge arm auxiliary conductive layer and the second power electrode conductive layer.
4. power module according to claim 1, which is characterized in that the first bridge arm power chip difference in each group
It is electrically connected by binding line with the first adjacent bridge arm auxiliary conductive layer.
5. power module according to claim 1, which is characterized in that the second bridge arm power chip difference in each group
It is electrically connected by binding line with the second adjacent bridge arm auxiliary conductive layer.
6. power module according to claim 1, which is characterized in that further include being set on the first insulating substrate and first
The first bridge arm power chip control conductive layer of bridge arm power chip control terminal electrical connection and the second bridge arm power chip control terminal
Second bridge arm power chip of electrical connection controls conductive layer.
7. power module according to claim 1, which is characterized in that the first bridge arm power chip, the second bridge arm function
Rate chip includes power MOS pipe and anti-parallel diodes.
8. power module according to claim 1, which is characterized in that the bridge arm power chip, the second bridge arm power
Chip includes IGBT and anti-parallel diodes.
9. power module according to claim 1, it is characterised in that: the first power electrode includes the first power electrode main body
With the first power electrode first connecting portion, the second power electrode includes that the second power electrode main body and the second power electrode first connect
Socket part, the first power electrode main body are electrically connected by the first power electrode first connecting portion with the first bridge arm conductive layer, the second function
Rate electrode body is electrically connected by the second power electrode first connecting portion with the second power electrode conductive layer, the first power electrode master
Body and the second power electrode main body are sheet and stacking is spaced apart, and the first power electrode main body is equipped with along first direction to function
Extend outside rate module, and exceeds the first power electrode second connecting portion of the second power electrode body rim；Second power electrode
Main body is equipped with the second power electrode second connecting portion for extending outwardly from its side, and exceeding the first power electrode body rim.
10. power module according to claim 9, it is characterised in that: the first power electrode second connecting portion and
Two power electrode second connecting portions are equipped with to the connecting hole fixed with bolt cooperation.
11. power module according to claim 10, it is characterised in that: the first power electrode second connecting portion includes
Second connecting portion main body, and from the outwardly extending second auxiliary interconnecting piece in second connecting portion side, the connecting hole setting exists
On second auxiliary interconnecting piece.
12. power module according to claim 9, it is characterised in that: the first power electrode second connecting portion is sheet metal,
The sheet metal and the first power electrode main body are integrally formed, and are provided with first the first connecting hole of power electrode and first on sheet metal
The second connecting hole of power electrode；Second power electrode second connecting portion is to prolong from two opposite sides of the second power electrode main body
The two panels sheet metal of stretching, the two panels sheet metal are each provided with second the first connecting hole of power electrode and the second power electrode second
Connecting hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811545552.5A CN109768039A (en) | 2018-12-17 | 2018-12-17 | A kind of two-side radiation power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811545552.5A CN109768039A (en) | 2018-12-17 | 2018-12-17 | A kind of two-side radiation power module |
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| Publication Number | Publication Date |
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| CN109768039A true CN109768039A (en) | 2019-05-17 |
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ID=66450758
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811545552.5A Pending CN109768039A (en) | 2018-12-17 | 2018-12-17 | A kind of two-side radiation power module |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110233145A (en) * | 2019-06-22 | 2019-09-13 | 深圳市奕通功率电子有限公司 | A kind of power module |
| CN110504237A (en) * | 2019-07-30 | 2019-11-26 | 合肥华耀电子工业有限公司 | A kind of stacked package power module and power modules |
| WO2020078082A1 (en) * | 2018-10-14 | 2020-04-23 | 深圳市奕通功率电子有限公司 | Different-edge-connecting power electrode assembly and power module |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060158914A1 (en) * | 2004-12-09 | 2006-07-20 | Dejan Schreiber | Power semiconductor module with reduced parasitic inductance |
| CN105374808A (en) * | 2015-11-23 | 2016-03-02 | 扬州国扬电子有限公司 | Power module |
| CN107369657A (en) * | 2017-08-30 | 2017-11-21 | 扬州国扬电子有限公司 | A kind of two-side radiation power model of multizone laid out in parallel |
| CN107634052A (en) * | 2017-08-30 | 2018-01-26 | 扬州国扬电子有限公司 | A kind of parallel installation electrode combination and power model |
-
2018
- 2018-12-17 CN CN201811545552.5A patent/CN109768039A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060158914A1 (en) * | 2004-12-09 | 2006-07-20 | Dejan Schreiber | Power semiconductor module with reduced parasitic inductance |
| CN105374808A (en) * | 2015-11-23 | 2016-03-02 | 扬州国扬电子有限公司 | Power module |
| CN107369657A (en) * | 2017-08-30 | 2017-11-21 | 扬州国扬电子有限公司 | A kind of two-side radiation power model of multizone laid out in parallel |
| CN107634052A (en) * | 2017-08-30 | 2018-01-26 | 扬州国扬电子有限公司 | A kind of parallel installation electrode combination and power model |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020078082A1 (en) * | 2018-10-14 | 2020-04-23 | 深圳市奕通功率电子有限公司 | Different-edge-connecting power electrode assembly and power module |
| CN110233145A (en) * | 2019-06-22 | 2019-09-13 | 深圳市奕通功率电子有限公司 | A kind of power module |
| CN110504237A (en) * | 2019-07-30 | 2019-11-26 | 合肥华耀电子工业有限公司 | A kind of stacked package power module and power modules |
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Address after: 518000 Zhenyeluan Valley, Baohe Road, Baolong Street, Longgang District, Shenzhen City, Guangdong Province, 3 buildings, 2 units, 10L Applicant after: Shenzhen Yitong Power Electronics Co.,Ltd. Address before: 518000 Zhenyeluan Valley, Baohe Road, Baolong Street, Longgang District, Shenzhen City, Guangdong Province, 3 buildings, 2 units, 10L Applicant before: SHENZHEN HUICHENG POWER ELECTRONICS Co.,Ltd. |
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Application publication date: 20190517 |
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