CN109585437A - A kind of multilayer power module - Google Patents
A kind of multilayer power module Download PDFInfo
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- CN109585437A CN109585437A CN201811544846.6A CN201811544846A CN109585437A CN 109585437 A CN109585437 A CN 109585437A CN 201811544846 A CN201811544846 A CN 201811544846A CN 109585437 A CN109585437 A CN 109585437A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
A kind of multilayer power module provided by the invention, it include: the first power electrode, second power electrode, output electrode, the first insulating substrate being stacked, the second insulated substrate, third insulating substrate, the first bridge arm power chip being set between the first insulating substrate and the second insulated substrate, first the first conductive layer of bridge arm being electrically connected with the first power electrode, first the second conductive layer of bridge arm being electrically connected with output electrode, the second bridge arm power chip being set between the second insulated substrate and third insulating substrate, second the second conductive layer of bridge arm being electrically connected with the second power electrode, second the first conductive layer of bridge arm being electrically connected with output electrode；First bridge arm power chip is electrically connected between first the first conductive layer of bridge arm and first the second conductive layer of bridge arm, and the second bridge arm power chip is electrically connected to the second bridge arm and leads between second conductive layer the first conductive layer of the second bridge arm.Compared with prior art, there is lower parasitic inductance.
Description
Technical field
The present invention relates to field of power electronics, and in particular to a kind of multilayer power module.
Background technique
Power module is power electronic electrical device such as metal-oxide semiconductor (MOS) (power MOS pipe), insulated-gate type field effect
It answers transistor (IGBT), the power switch module that fast recovery diode (FRD) is combined and packaged by certain function is mainly used
In electric car, wind-power electricity generation, the power conversion under the various occasions such as industrial frequency conversion.
The motor-drive circuit of electric car generally includes three groups of power modules for being respectively provided with upper and lower bridge arm, and Fig. 1 is existing
A kind of circuit diagram for the power module having shows the circuit signal of one group of power module with upper and lower bridge arm
Figure comprising: as the insulated-gate type field effect transistor Z1 of upper bridge arm, and the fast recovery diode with its reverse parallel connection
D1, as the insulated-gate type field effect transistor Z2 of lower bridge arm, and the fast recovery diode D2 with its reverse parallel connection, wherein absolutely
The positive p+ of the collector connection power module of edge grid-type field effect transistor Z1, emitter connect edge grid-type field effect transistor
The collector of pipe Z2, the cathode p- of the emitter connection power module of edge grid-type field effect transistor Z2, insulated-gate type field effect
The emitter of transistor Z1 and the collector of Z2 connect the output terminal of power module jointly.In practical applications, usually used
Three groups of power modules provide three-phase alternating current for motor；It is only illustrated with the circuit diagram of one group of power module herein
Working principle: when insulated-gate type field effect transistor Z1 is connected, the electric current successively positive p+ through power module, insulated-gate type field
Collector, emitter, the power module output terminal OUTPUT of effect transistor Z1 is exported to motor；Work as insulated-gate type field effect
When transistor Z1 is turned off, since motor is inductive load, to guarantee that current direction is constant, freewheel current need to be through other groups of power
Cathode p-, diode D2, power module output terminal OUTPUT of the module through the power module are exported to motor.
Under the application of certain smaller powers, the electronic device in power module can also use power MOS pipe, and Fig. 2 is
Another circuit diagram of power MOS pipe module comprising: as the power MOS pipe M1 of upper bridge arm, as the function of lower bridge arm
The positive p+ of the drain electrode connection power module of rate metal-oxide-semiconductor M2, wherein power MOS pipe M1, the source electrode of power MOS pipe M1 connect power
The drain electrode of metal-oxide-semiconductor M2, the cathode p- of the source electrode connection power module of power MOS pipe M2, the source electrode and power of power MOS pipe M1
The drain electrode of metal-oxide-semiconductor M2 connects the output terminal of power module, working principle and use insulated-gate type field effect crystal jointly
The module of pipe is similar, and the difference between both essentially consists in backward dioded built in power MOS pipe, therefore does not need in parallel anti-
To diode.In addition, inverse conductivity type IGBT and power MOS has identical structure and function, due to diode-built-in, it is not required to reversely simultaneously
Union II pole pipe, module design and structure are similar to power MOS, and details are not described herein.
Power module generally comprises at least one half-bridge structure, and the half-bridge structure is by two bridge arms and to for power mould
First power electrode of block conduction electric current, the second power electrode, output electrode are composed, the first power electrode, the second power
Electrode and output electrode are connected with conductive layer corresponding in power module, to realize half-bridge circuit function；In practical applications,
Parasitic inductance is all the main bugbear that needs to overcome in power electronic device application all the time, especially in high frequency and high-power
Application.The parasitic inductance of inside modules will cause the overvoltage in turn off process, and parasitic parameter will cause power module
Waveform concussion in switching process, to increase electromagnetic interference and switching loss.
Summary of the invention
The present invention to solve problems of the prior art, provides a kind of multilayer power module, comprising: the first power electricity
Pole, the second power electrode, output electrode, the first insulating substrate being stacked, the second insulated substrate, third insulating substrate, if
The first bridge arm power chip for being placed between the first insulating substrate and the second insulated substrate, be electrically connected with the first power electrode
One the first conductive layer of bridge arm, first the second conductive layer of bridge arm being electrically connected with output electrode are set to the second insulated substrate and
The second bridge arm power chip between three insulating substrates, second the second conductive layer of bridge arm being electrically connected with the second power electrode, with
Second the first conductive layer of bridge arm of output electrode electrical connection；First bridge arm power chip is electrically connected to first the first conductive layer of bridge arm
And first between the second conductive layer of bridge arm, the second bridge arm power chip is electrically connected to the second bridge arm and leads second the second bridge arm of conductive layer
Between first conductive layer.
Further, first the first conductive layer of bridge arm is set to the first insulating substrate surface opposite with the second insulated substrate
On, first the second conductive layer of bridge arm is set on the second insulated substrate surface opposite with the first insulating substrate, the first bridge arm function
Rate chip is set on first the first conductive layer of bridge arm；It is exhausted with third that second the second conductive layer of bridge arm is set to the second insulated substrate
On the opposite surface of edge substrate, second the first conductive layer of bridge arm is set to the third insulating substrate table opposite with the second insulated substrate
On face, the second bridge arm power chip is set on second the first conductive layer of bridge arm.
Further, first the first conductive layer of bridge arm is set to the first insulating substrate surface opposite with the second insulated substrate
On, first the second conductive layer of bridge arm is set on the second insulated substrate surface opposite with the first insulating substrate, the first bridge arm function
Rate chip is set on first the first conductive layer of bridge arm；It is exhausted with third that second the first conductive layer of bridge arm is set to the second insulated substrate
On the opposite surface of edge substrate, second the second conductive layer of bridge arm is set to the third insulating substrate table opposite with the second insulated substrate
On face, the second bridge arm power chip is set on second the first conductive layer of bridge arm.
Further, first the second conductive layer of bridge arm is set to the first insulating substrate surface opposite with the second insulated substrate
On, first the first conductive layer of bridge arm is set on the second insulated substrate surface opposite with the first insulating substrate, the first bridge arm function
Rate chip is set on first the first conductive layer of bridge arm；It is exhausted with third that second the first conductive layer of bridge arm is set to the second insulated substrate
On the opposite surface of edge substrate, second the second conductive layer of bridge arm is set to the third insulating substrate table opposite with the second insulated substrate
On face, the second bridge arm power chip is set on second the first conductive layer of bridge arm.
Further, first the second conductive layer of bridge arm is set to the first insulating substrate surface opposite with the second insulated substrate
On, first the first conductive layer of bridge arm is set on the second insulated substrate surface opposite with the first insulating substrate, the first bridge arm function
Rate chip is set on first the first conductive layer of bridge arm；It is exhausted with third that second the second conductive layer of bridge arm is set to the second insulated substrate
On the opposite surface of edge substrate, second the first conductive layer of bridge arm is set to the third insulating substrate table opposite with the second insulated substrate
On face, the second bridge arm power chip is set on second the first conductive layer of bridge arm.
Further, including multiple the first conductive layers of first bridge arm, multiple first bridge arm power chip groups, multiple second bridges
The first conductive layer of arm, multiple second bridge arm power chip groups；Each first power chip group is separately positioned on corresponding first bridge arm
On first conductive layer, multiple the first conductive layers of first bridge arm pass through binding line respectively and are electrically connected with the first power electrode；Each second
Power chip group is separately positioned on corresponding the first conductive layer of second bridge arm, and multiple the first conductive layers of second bridge arm pass through respectively
Binding line is electrically connected with output electrode；
Further, the power module further include: the first bridge arm conductive column, the second bridge arm conductive column, the first bridge arm power core
Piece is electrically connected between first the first conductive layer of bridge arm and first the second conductive layer of bridge arm by the first bridge arm conductive column, the second bridge
Arm power chip by the second bridge arm conductive column be electrically connected to the second bridge arm lead second the first conductive layer of the second bridge arm of conductive layer it
Between.
Further, the first bridge arm power chip and the second bridge arm power chip include power MOS pipe and reversed
Parallel diode.
Further, the first bridge arm power chip and the second bridge arm power chip include IGBT and reverse parallel connection two
Pole pipe.
Further, the power module further include: be set between the first insulating substrate and the second insulated baseboard and
The first bridge arm power chip control conductive layer of one bridge arm power chip control terminal electrical connection is set to the second insulated substrate and the
The the second bridge arm power chip control conductive layer being electrically connected between three insulated baseboards with the second bridge arm power chip control terminal.
Further, the first power electrode includes the first power electrode main body and the first power electrode first connecting portion, the
Two power electrodes include the second power electrode main body and the second power electrode first connecting portion, and the first power electrode main body passes through the
One power electrode first connecting portion is electrically connected with first the first conductive layer of bridge arm, and the second power electrode main body passes through the second power electricity
Pole first connecting portion is electrically connected with second the second conductive layer of bridge arm, and the first power electrode main body and the second power electrode main body are
Sheet and stacking be spaced apart, the first power electrode main body be equipped with extends along first direction to outside power module, and exceed second
First power electrode second connecting portion of power electrode body rim；Second power electrode main body is equipped with from its side to extension
It stretches, and exceeds the second power electrode second connecting portion of the first power electrode body rim.
Further, the first power electrode second connecting portion and the second power electrode second connecting portion be equipped with to
The fixed connecting hole with bolt cooperation.
Further, the first power electrode second connecting portion includes second connecting portion main body, and is connected from second
The outwardly extending second auxiliary interconnecting piece in portion side, the connecting hole setting is on the second auxiliary interconnecting piece.
Further, the first power electrode second connecting portion is sheet metal, the sheet metal and the first power electrode main body one
It is body formed, first the first connecting hole of power electrode and first the second connecting hole of power electrode are provided on sheet metal；Second power
Electrode second connecting portion is the two panels sheet metal extended from two opposite sides of the second power electrode main body, the two panels metal
Piece is each provided with second the first connecting hole of power electrode and second the second connecting hole of power electrode.
A kind of multilayer power module provided by the invention, comprising: the first power electrode, the second power electrode, output electrode,
The first insulating substrate, the second insulated substrate, the third insulating substrate being stacked are set to the first insulating substrate and the second insulation
The first bridge arm power chip between substrate, first the first conductive layer of bridge arm being electrically connected with the first power electrode, with output electricity
First the second conductive layer of bridge arm of pole electrical connection, the second bridge arm function being set between the second insulated substrate and third insulating substrate
Rate chip, second the second conductive layer of bridge arm being electrically connected with the second power electrode, the second bridge arm being electrically connected with output electrode
One conductive layer；First bridge arm power chip is electrically connected between first the first conductive layer of bridge arm and first the second conductive layer of bridge arm,
Second bridge arm power chip is electrically connected to the second bridge arm and leads between second conductive layer the first conductive layer of the second bridge arm.With the prior art
It compares, there is lower parasitic inductance.
Detailed description of the invention
Fig. 1 is a kind of circuit diagram of existing power module；
Fig. 2 is the circuit diagram of existing another power module；
Fig. 3 is a kind of perspective view of multilayer power module embodiments one provided by the invention；
Fig. 4 is a kind of side view of multilayer power module embodiments two provided by the invention；
Fig. 5 is a kind of side view of multilayer power module embodiments three provided by the invention；
Fig. 6 is a kind of side view of multilayer power module embodiments four provided by the invention；
Fig. 7 is a kind of side view of multilayer power module embodiments five provided by the invention；
Fig. 8 is a kind of plane outspread drawing of multilayer power module embodiments two provided by the invention；
Fig. 9 is a kind of power electrode structure chart of multilayer power module embodiments provided by the invention.
Specific embodiment
The embodiment of the present invention is described in detail with reference to the accompanying drawing, it should be understood that specific implementation described herein
Example is only used to explain the present invention, is not intended to limit the present invention.
A kind of multilayer power module as shown in Figures 1 to 8, comprising: the first power electrode 100, the second power electrode
200, output electrode 11, the first insulating substrate 12, the second insulated substrate 13, the third insulating substrate 14 that are stacked, are set to
The first bridge arm power chip 15 between first insulating substrate 12 and the second insulated substrate 13 is electrically connected with the first power electrode 100
First the first conductive layer of bridge arm 16 connect, first the second conductive layer of bridge arm 17 connecting with output electrode electricity 11, are set to second
The second bridge arm power chip 18 between insulating substrate and third insulating substrate, second be electrically connected with the second power electrode 200
The second conductive layer of bridge arm 19, second the first conductive layer of bridge arm 20 being electrically connected with output electrode 11；First bridge arm power chip 15
It is electrically connected between first bridge arm the first conductive layer 16 and first the second conductive layer of bridge arm 17, the second bridge arm power chip 18 is electrically connected
The second bridge arm is connected to lead between 19 second the first conductive layer of bridge arm 20 of the second conductive layer.
Specifically, as shown in figure 4, in certain embodiments, first the first conductive layer of bridge arm 16 is set to the first insulation base
On the surface opposite with the second insulated substrate 13 of plate 12, first the second conductive layer of bridge arm 17 is set to the second insulated substrate 13 and
On surface of one insulating substrate with respect to 12, the first bridge arm power chip 15 is set on first the first conductive layer of bridge arm 16；Second
The second conductive layer of bridge arm 19 is set on the surface opposite with third insulating substrate 14 of the second insulated substrate 13, the second bridge arm first
Conductive layer 20 is set on the surface opposite with the second insulated substrate 13 of third insulating substrate 14, and the second bridge arm power chip 18 is set
It is placed on second the first conductive layer of bridge arm 20.
Specifically, as shown in figure 5, in certain embodiments, first the first conductive layer of bridge arm 16 is set to the first insulation base
On the surface opposite with the second insulated substrate 13 of plate 12, first the second conductive layer of bridge arm 17 is set to the second insulated substrate 13 and
On the opposite surface of one insulating substrate 12, the first bridge arm power chip 15 is set on first the first conductive layer of bridge arm 16；Second
The first conductive layer of bridge arm 20 is set on the surface opposite with third insulating substrate 14 of the second insulated substrate 13, the second bridge arm second
Conductive layer 19 is set on the surface opposite with the second insulated substrate 13 of third insulating substrate 14, and the second bridge arm power chip 18 is set
It is placed on second the first conductive layer of bridge arm.
Specifically, as shown in fig. 6, in certain embodiments, first the second conductive layer of bridge arm 17 is set to the first insulation base
On the surface opposite with the second insulated substrate 13 of plate 12, first the first conductive layer of bridge arm 16 is set to the second insulated substrate 13 and
On the opposite surface of one insulating substrate 12, the first bridge arm power chip 15 is set on first the first conductive layer of bridge arm 16；Second
The first conductive layer of bridge arm 20 is set on the surface opposite with third insulating substrate 14 of the second insulated substrate 13, the second bridge arm second
Conductive layer 19 is set on the surface opposite with the second insulated substrate 13 of third insulating substrate 14, and the second bridge arm power chip 18 is set
It is placed on second the first conductive layer of bridge arm 20.
Specifically, as shown in fig. 7, in certain embodiments, first the second conductive layer of bridge arm 17 is set to the first insulation base
On the surface opposite with the second insulated substrate 13 of plate 12, first the first conductive layer of bridge arm 16 is set to the second insulated substrate 13 and
On the opposite surface of one insulating substrate 12, the first bridge arm power chip 15 is set on first the first conductive layer of bridge arm 16；Second
The second conductive layer of bridge arm 19 is set on the surface opposite with third insulating substrate 14 of the second insulated substrate 13, the second bridge arm first
Conductive layer 20 is set on the surface opposite with the second insulated substrate 13 of third insulating substrate 14, and the second bridge arm power chip 18 is set
It is placed on second the first conductive layer of bridge arm.
Specifically, as shown in figure 8, in certain embodiments, the power module includes that multiple first bridge arms first are conductive
Layer 16, multiple first bridge arm power chip groups, multiple the first conductive layers of second bridge arm 20, multiple second bridge arm power chip groups；
Each first power chip group is separately positioned on corresponding the first conductive layer of first bridge arm 16, multiple the first conductive layers of first bridge arm
16 are electrically connected by binding line with the first power electrode 100 respectively；Each second power chip group is separately positioned on corresponding second
On the first conductive layer of bridge arm 20, multiple the first conductive layers of second bridge arm 20 are electrically connected by binding line with output electrode 11 respectively；
Specifically, as shown in Fig. 4 to 7, in certain embodiments, the power module further include: the first bridge arm conductive column 21,
Two bridge arm conductive columns 22, the first bridge arm power chip 15 are electrically connected to first the first conduction of bridge arm by the first bridge arm conductive column 21
Between layer 16 and first the second conductive layer of bridge arm 17, the second bridge arm power chip 18 is electrically connected to by the second bridge arm conductive column 22
Second bridge arm is led between 19 second the first conductive layer of bridge arm 20 of the second conductive layer.
Specifically, in certain embodiments, the first bridge arm power chip and the second bridge arm power chip include power
Metal-oxide-semiconductor and anti-parallel diodes.
Specifically, in certain embodiments, the first bridge arm power chip and the second bridge arm power chip include IGBT
And anti-parallel diodes.
Specifically, in certain embodiments, the power module further include: be set to the first insulating substrate and the second insulation
The first bridge arm power chip being electrically connected between base version with the first bridge arm power chip control terminal controls conductive layer, is set to second
The second bridge arm power chip control being electrically connected between insulating substrate and third insulated baseboard with the second bridge arm power chip control terminal
Conductive layer processed.To conduct the control letter of the first bridge arm power chip of control and the second bridge arm power chip turn-on and turn-off
Number.
Specifically, as shown in figure 3, in certain embodiments, the first power electrode 100 includes the first power electrode main body
101 and the first power electrode first connecting portion 102, the second power electrode 200 include the second power electrode main body 201 and the second function
Rate electrode first connecting portion 202, the first power electrode main body pass through the first power electrode first connecting portion 101 and the first bridge arm the
The electrical connection of one conductive layer 16, the second power electrode main body pass through the second power electrode first connecting portion 201 and the second bridge arm second
The electrical connection of conductive layer 19, the first power electrode main body 101 and the second power electrode main body 201 are sheet and stacking is separated and set
It sets, the first power electrode main body 101, which is equipped with, to be extended along first direction to outside power module, and exceeds the second power electrode main body
The first power electrode second connecting portion 103 at 201 edges；Second power electrode main body 201 is equipped with to extend outwardly from its side, and
The second power electrode second connecting portion 203 beyond 101 edge of the first power electrode main body.In a particular application, the first power
Electrode body, the first power electrode first connecting portion, the first power electrode second connecting portion generally use piece of metal piece process
Machining is made into integration, and can also be made according to the actual needs of multi-sheet structure connection；Second power electrode main body,
Two power electrode first connecting portions, the second power electrode second connecting portion, generally use piece of metal piece through over mechanical processing one
System at, can also according to the actual needs using multi-sheet structure connection be made；Wherein, the side of the second power electrode main body,
It is referring to definition with first direction, i.e. the part of the second power electrode main body two sides in a first direction can be referred to as the second function
The side of rate electrode body.Using the embodiment, the parasitic inductance of power electrode can be further decreased.
Specifically, as shown in figure 3, in certain embodiments, the first power electrode second connecting portion 103 and the second function
Rate electrode second connecting portion 203 is equipped with to the connecting hole fixed with bolt cooperation.
Specifically, as shown in figure 9, in certain embodiments, the first power electrode second connecting portion 103 includes second
Interconnecting piece main body, and from the outwardly extending second auxiliary interconnecting piece in second connecting portion side, the connecting hole is arranged second
It assists on interconnecting piece.Second auxiliary interconnecting piece is two gold stretched along the first power module second connecting portion main body side direction extension
Belong to piece 1033a, 1034b, the connecting hole setting is on the second auxiliary interconnecting piece.
It specifically, should as shown in figure 3, in certain embodiments, the first power electrode second connecting portion 103 is sheet metal
Sheet metal and the first power electrode main body are integrally formed, and first the first connecting hole of power electrode 1031 and the are provided on sheet metal
One the second connecting hole of power electrode 1032；Second power electrode second connecting portion is from opposite two of the second power electrode main body
The two panels sheet metal that side is extended, the two panels sheet metal are each provided with second power electrode the first connecting hole 2031 and the second function
The second connecting hole of rate electrode 2032.
A kind of multilayer power module specific work process provided by the invention is, when power module works in driving current shape
When state, driving current is flowed into from the first power electrode 100, followed by first bridge arm the first conductive layer 16, the first bridge arm power
Chip 15, first the second conductive layer of bridge arm 17 flow out to output electrode；When power module work in freewheeling state, freewheel current
It is flowed into from the second power electrode 200, followed by second electrode the second conductive layer 19, the second bridge arm power chip 18, the second bridge
The first conductive layer of arm 20 flows out to output electrode.
The above description is only a preferred embodiment of the present invention, is not intended to limit the scope of the invention, all utilizations
Equivalent structure or equivalent flow shift made by description of the invention and accompanying drawing content is applied directly or indirectly in other correlations
Technical field, be included within the scope of the present invention.
Claims (14)
1. a kind of multilayer power module characterized by comprising the first power electrode, the second power electrode, output electrode, layer
The first insulating substrate, the second insulated substrate, third insulating substrate of folded setting are set to the first insulating substrate and the second insulation base
The first bridge arm power chip between plate, first the first conductive layer of bridge arm being electrically connected with the first power electrode and output electrode
First the second conductive layer of bridge arm of electrical connection, the second bridge arm power being set between the second insulated substrate and third insulating substrate
Chip, second the second conductive layer of bridge arm being electrically connected with the second power electrode, the second bridge arm first being electrically connected with output electrode
Conductive layer；First bridge arm power chip is electrically connected between first the first conductive layer of bridge arm and first the second conductive layer of bridge arm, the
Two bridge arm power chips are electrically connected to the second bridge arm and lead between second conductive layer the first conductive layer of the second bridge arm.
2. power module according to claim 1, which is characterized in that first the first conductive layer of bridge arm is set to the first insulation
On the substrate surface opposite with the second insulated substrate, first the second conductive layer of bridge arm is set to the second insulated substrate and the first insulation
On the opposite surface of substrate, the first bridge arm power chip is set on first the first conductive layer of bridge arm；Second bridge arm second is conductive
Layer is set on the second insulated substrate surface opposite with third insulating substrate, and it is exhausted that second the first conductive layer of bridge arm is set to third
On the edge substrate surface opposite with the second insulated substrate, the second bridge arm power chip is set on second the first conductive layer of bridge arm.
3. power module according to claim 1, which is characterized in that first the first conductive layer of bridge arm is set to the first insulation
On the substrate surface opposite with the second insulated substrate, first the second conductive layer of bridge arm is set to the second insulated substrate and the first insulation
On the opposite surface of substrate, the first bridge arm power chip is set on first the first conductive layer of bridge arm；Second bridge arm first is conductive
Layer is set on the second insulated substrate surface opposite with third insulating substrate, and it is exhausted that second the second conductive layer of bridge arm is set to third
On the edge substrate surface opposite with the second insulated substrate, the second bridge arm power chip is set on second the first conductive layer of bridge arm.
4. power module according to claim 1, which is characterized in that first the second conductive layer of bridge arm is set to the first insulation
On the substrate surface opposite with the second insulated substrate, first the first conductive layer of bridge arm is set to the second insulated substrate and the first insulation
On the opposite surface of substrate, the first bridge arm power chip is set on first the first conductive layer of bridge arm；Second bridge arm first is conductive
Layer is set on the second insulated substrate surface opposite with third insulating substrate, and it is exhausted that second the second conductive layer of bridge arm is set to third
On the edge substrate surface opposite with the second insulated substrate, the second bridge arm power chip is set on second the first conductive layer of bridge arm.
5. power module according to claim 1, which is characterized in that first the second conductive layer of bridge arm is set to the first insulation
On the substrate surface opposite with the second insulated substrate, first the first conductive layer of bridge arm is set to the second insulated substrate and the first insulation
On the opposite surface of substrate, the first bridge arm power chip is set on first the first conductive layer of bridge arm；Second bridge arm second is conductive
Layer is set on the second insulated substrate surface opposite with third insulating substrate, and it is exhausted that second the first conductive layer of bridge arm is set to third
On the edge substrate surface opposite with the second insulated substrate, the second bridge arm power chip is set on second the first conductive layer of bridge arm.
6. power module according to claim 1, which is characterized in that including multiple the first conductive layers of first bridge arm, multiple
First bridge arm power chip group, multiple the first conductive layers of second bridge arm, multiple second bridge arm power chip groups；Each first power core
Piece group is separately positioned on corresponding the first conductive layer of first bridge arm, and multiple the first conductive layers of first bridge arm pass through binding line respectively
It is electrically connected with the first power electrode；Each second power chip group is separately positioned on corresponding the first conductive layer of second bridge arm, more
A the first conductive layer of second bridge arm passes through binding line respectively and is electrically connected with output electrode.
7. power module according to claim 1, which is characterized in that further include: the first bridge arm conductive column, the second bridge arm are led
Electric column, the first bridge arm power chip are electrically connected to first the first conductive layer of bridge arm and the first bridge arm by the first bridge arm conductive column
Between two conductive layers, the second bridge arm power chip is electrically connected to the second bridge arm by the second bridge arm conductive column and leads the second conductive layer
Between two the first conductive layers of bridge arm.
8. power module according to claim 1, which is characterized in that the first bridge arm power chip and the second bridge arm function
Rate chip includes power MOS pipe and anti-parallel diodes.
9. power module according to claim 1, which is characterized in that the first bridge arm power chip and the second bridge arm function
Rate chip includes IGBT and anti-parallel diodes.
10. power module according to claim 1, which is characterized in that further include being set to the first insulating substrate and second
The first bridge arm power chip being electrically connected between insulated baseboard with the first bridge arm power chip control terminal controls conductive layer, is set to
The second bridge arm power core being electrically connected between the second insulated substrate and third insulated baseboard with the second bridge arm power chip control terminal
Piece controls conductive layer.
11. power module according to claim 1, it is characterised in that: the first power electrode includes the first power electrode master
Body and the first power electrode first connecting portion, the second power electrode include the second power electrode main body and the second power electrode first
Interconnecting piece, the first power electrode main body are electrically connected by the first power electrode first connecting portion with first the first conductive layer of bridge arm,
Second power electrode main body is electrically connected by the second power electrode first connecting portion with second the second conductive layer of bridge arm, the first power
Electrode body and the second power electrode main body are sheet and stacking is spaced apart, and the first power electrode main body is equipped with along first party
Extend to outside power module, and exceeds the first power electrode second connecting portion of the second power electrode body rim；Second function
Rate electrode body is equipped with to extend outwardly from its side, and the second power electrode second beyond the first power electrode body rim connects
Socket part.
12. power module according to claim 11, it is characterised in that: the first power electrode second connecting portion and
Two power electrode second connecting portions are equipped with to the connecting hole fixed with bolt cooperation.
13. power module according to claim 12, it is characterised in that: the first power electrode second connecting portion includes
Second connecting portion main body, and from the outwardly extending second auxiliary interconnecting piece in second connecting portion side, the connecting hole setting exists
On second auxiliary interconnecting piece.
14. power module according to claim 11, it is characterised in that: the first power electrode second connecting portion is metal
Piece, the sheet metal and the first power electrode main body are integrally formed, be provided on sheet metal first the first connecting hole of power electrode and
First the second connecting hole of power electrode；Second power electrode second connecting portion is two sides opposite from the second power electrode main body
While the two panels sheet metal extended, which is each provided with second the first connecting hole of power electrode and the second power electrode
Second connecting hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811544846.6A CN109585437A (en) | 2018-12-17 | 2018-12-17 | A kind of multilayer power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811544846.6A CN109585437A (en) | 2018-12-17 | 2018-12-17 | A kind of multilayer power module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020078082A1 (en) * | 2018-10-14 | 2020-04-23 | 深圳市奕通功率电子有限公司 | Different-edge-connecting power electrode assembly and power module |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004311685A (en) * | 2003-04-07 | 2004-11-04 | Fuji Electric Holdings Co Ltd | Semiconductor device for power |
| CN107170714A (en) * | 2017-06-14 | 2017-09-15 | 扬州国扬电子有限公司 | A kind of low stray inductance power model of low stray inductance power model and two-side radiation |
| CN107393901A (en) * | 2017-08-30 | 2017-11-24 | 扬州国扬电子有限公司 | A kind of two-side radiation power model of laminated base plate |
| CN107634052A (en) * | 2017-08-30 | 2018-01-26 | 扬州国扬电子有限公司 | A kind of parallel installation electrode combination and power model |
| CN107785354A (en) * | 2017-09-05 | 2018-03-09 | 浙江大学 | Half-bridge module in parallel in a kind of piece based on 3D encapsulation |
-
2018
- 2018-12-17 CN CN201811544846.6A patent/CN109585437A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004311685A (en) * | 2003-04-07 | 2004-11-04 | Fuji Electric Holdings Co Ltd | Semiconductor device for power |
| CN107170714A (en) * | 2017-06-14 | 2017-09-15 | 扬州国扬电子有限公司 | A kind of low stray inductance power model of low stray inductance power model and two-side radiation |
| CN107393901A (en) * | 2017-08-30 | 2017-11-24 | 扬州国扬电子有限公司 | A kind of two-side radiation power model of laminated base plate |
| CN107634052A (en) * | 2017-08-30 | 2018-01-26 | 扬州国扬电子有限公司 | A kind of parallel installation electrode combination and power model |
| CN107785354A (en) * | 2017-09-05 | 2018-03-09 | 浙江大学 | Half-bridge module in parallel in a kind of piece based on 3D encapsulation |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020078082A1 (en) * | 2018-10-14 | 2020-04-23 | 深圳市奕通功率电子有限公司 | Different-edge-connecting power electrode assembly and power module |
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Address after: 518000 Zhenyeluan Valley, Baohe Road, Baolong Street, Longgang District, Shenzhen City, Guangdong Province, 3 buildings, 2 units, 10L Applicant after: Shenzhen Yitong Power Electronics Co., Ltd. Address before: 518000 Zhenyeluan Valley, Baohe Road, Baolong Street, Longgang District, Shenzhen City, Guangdong Province, 3 buildings, 2 units, 10L Applicant before: Shenzhen Huicheng Rate Electronics Co., Ltd. |
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