CN218827133U - Thin power module - Google Patents

Abstract

A low profile power module comprising: the bridge arm comprises an insulating substrate, a first bridge arm patterned circuit layer, a second bridge arm patterned circuit layer, a first bridge arm power chip, a second bridge arm power chip, a first power electrode, a second power electrode, an output electrode, a first bridge arm control electrode, a second bridge arm control electrode, a first bridge arm conductive bridge and a second bridge arm conductive bridge; the first bridge arm power chip is arranged on the first bridge arm patterned circuit layer, the second bridge arm power chip is arranged on the second bridge arm patterned circuit layer, the first bridge arm conductive bridge is erected above the first bridge arm power chip, and the second bridge arm conductive bridge is erected above the first bridge arm conductive bridge; the first bridge arm power chip is electrically connected with the first power electrode and the first bridge arm control electrode respectively, the first bridge arm power chip is electrically connected with the output electrode, and the second bridge arm power chip is electrically connected with the second power electrode, the second bridge arm control electrode and the output electrode respectively. Compared with the prior art, the light and thin type LED lamp is light, thin and reliable, and low in processing cost.

Description

Thin power module

Technical Field

The utility model relates to a power electronics field, concretely relates to slim power module.

Background

The power module is a power switch module formed by combining and packaging power electronic power devices such as a metal oxide semiconductor (power MOS) tube, an insulated gate field effect transistor (IGBT) and a Fast Recovery Diode (FRD) according to certain functions, and is mainly used for power conversion in various occasions such as electric vehicles, wind power generation, industrial frequency conversion and the like.

A motor driving circuit of an electric vehicle generally includes three groups of power modules having upper and lower arms, respectively, and fig. 1 is a circuit diagram of a conventional power module, which shows a circuit diagram of a group of power modules having upper and lower arms, and includes: the bridge-type power module comprises an insulated gate type field effect transistor Z1 serving as an upper bridge arm, a fast recovery diode D1 in reverse parallel connection with the insulated gate type field effect transistor Z1, an insulated gate type field effect transistor Z2 serving as a lower bridge arm and a fast recovery diode D2 in reverse parallel connection with the insulated gate type field effect transistor Z2, wherein a collector electrode of the insulated gate type field effect transistor Z1 is connected with an anode p + of the power module, an emitter electrode of the insulated gate type field effect transistor Z2 is connected with a collector electrode of the edge gate type field effect transistor Z2, and an emitter electrode of the insulated gate type field effect transistor Z1 and the collector electrode of the insulated gate type field effect transistor Z2 are commonly connected with an output terminal of the power module. In practical applications, three sets of the power modules are generally used to provide three-phase alternating current for the motor; the operation principle of the power module is illustrated by the circuit schematic diagram of only one group of power modules: when the insulated gate type field effect transistor Z1 is switched on, current is sequentially OUTPUT to the motor through a positive electrode p + of the power module, a collector electrode and an emitter electrode of the insulated gate type field effect transistor Z1 and a power module OUTPUT terminal OUTPUT; when the insulated gate field effect transistor Z1 is turned off, since the motor is an inductive load, to ensure that the current flow direction is unchanged, the follow current needs to be OUTPUT to the motor through the other groups of power modules via the negative electrode p-of the power module, the diode D2, and the power module OUTPUT terminal OUTPUT.

In some lower power applications, the electronic device in the power module may also use a power MOS transistor, and fig. 2 is a schematic circuit diagram of another power MOS transistor module, which includes: the power MOS tube M1 as an upper bridge arm and the power MOS tube M2 as a lower bridge arm are connected, wherein the drain electrode of the power MOS tube M1 is connected with the positive electrode p + of a power module, the source electrode of the power MOS tube M1 is connected with the drain electrode of the power MOS tube M2, the source electrode of the power MOS tube M2 is connected with the negative electrode p-of the power module, the source electrode of the power MOS tube M1 and the drain electrode of the power MOS tube M2 are connected with the output terminal of the power module together, the working principle of the power module is similar to that of a module adopting an insulated gate field effect transistor, and the difference between the power module and the module is mainly that a reverse diode is arranged in the power MOS tube, so that the parallel connection of the reverse diodes is not needed. In addition, the reverse conducting type IGBT has the same structure and function as the power MOS, and because a diode is built in, a reverse parallel diode is not required, and the module design and structure are similar to those of the power MOS, and are not described herein again.

The power module generally comprises at least one half-bridge structure, the half-bridge structure is formed by combining two bridge arms, a first power electrode, a second power electrode and an output electrode, the first power electrode, the second power electrode and the output electrode are used for conducting current for the power module, and the first power electrode, the second power electrode and the output electrode are connected with corresponding conducting layers in the power module so as to realize the function of a half-bridge circuit; in practical applications, parasitic inductance has been a major problem to be overcome in power electronics applications, especially in high frequency and high power applications. Parasitic inductance inside the module can cause overvoltage in the turn-off process, and parasitic parameters can cause waveform oscillation in the switching process of the power module, so that electromagnetic interference and switching loss are increased.

Disclosure of Invention

The utility model discloses a solve the problem that exists among the prior art, provide a slim power module, include: the bridge arm power supply comprises an insulating substrate, a first bridge arm patterned circuit layer, a second bridge arm patterned circuit layer, a first bridge arm power chip, a second bridge arm power chip, a first power electrode, a second power electrode, an output electrode, a first bridge arm control electrode, a second bridge arm control electrode, a first bridge arm conductive bridge and a second bridge arm conductive bridge; the first bridge arm patterned circuit layer and the second bridge arm patterned circuit layer are arranged on the first surface of the insulating substrate, the first bridge arm power chip is arranged on the first bridge arm patterned circuit layer, the second bridge arm power chip is arranged on the second bridge arm patterned circuit layer, the first bridge arm conductive bridge is erected above the first bridge arm power chip, and the second bridge arm conductive bridge is erected above the first bridge arm conductive bridge; the first bridge arm power chip is respectively and electrically connected with the first power electrode and the first bridge arm control electrode through the first bridge arm patterned circuit layer, the first bridge arm power chip is electrically connected with the output electrode through the first bridge arm conductive bridge and the second bridge arm patterned circuit layer in sequence, the second bridge arm power chip is electrically connected with the second power electrode through the second bridge arm conductive bridge, and the second bridge arm power chip is respectively and electrically connected with the second bridge arm control electrode and the output electrode through the second bridge arm patterned circuit layer.

The first bridge arm conductive bridge comprises a first bridge arm conductive bridge main body, and a first connecting end and a second connecting end which extend outwards from the first bridge arm conductive bridge main body, wherein the first connecting end is connected with the first bridge arm power chip, and the second connecting end is connected with the second bridge arm patterned circuit layer.

The second bridge arm conductive bridge comprises a second bridge arm conductive bridge main body, a third connecting end and a fourth connecting end, wherein the third connecting end and the fourth connecting end extend outwards from the second bridge arm conductive bridge main body, the third connecting end is connected with the second bridge arm power chip, and the fourth connecting end is connected with the second power electrode.

Furthermore, a plurality of first bridge arm power chips are arranged on the first bridge arm patterned circuit layer, a plurality of first insulating islands are arranged among the first bridge arm power chips, first control conductive layers are respectively arranged in the first insulating islands, and the first bridge arm power chips are respectively electrically connected with the adjacent first control conductive layers; the first bridge arm patterned circuit layer further comprises a first bridge arm control electrode conducting layer, and the first bridge arm control electrode is electrically connected with the plurality of first bridge arm power chips through the first bridge arm control electrode conducting layer and the corresponding first control conducting layer.

Furthermore, a plurality of second bridge arm power chips are arranged on the second bridge arm patterned circuit layer, a plurality of second insulation islands are arranged among the plurality of second bridge arm power chips, second control conductive layers are respectively arranged in the plurality of second insulation islands, and the plurality of second bridge arm power chips are respectively electrically connected with the adjacent second control conductive layers; the second bridge arm patterned circuit layer further comprises a second bridge arm control electrode conducting layer, and the second bridge arm control electrode is electrically connected with the plurality of second bridge arm power chips through the second bridge arm control electrode conducting layer and the corresponding second control conducting layer.

Further, the first power electrode and the second power electrode are sheet-shaped and are arranged in a laminated and separated mode.

Furthermore, the insulating substrate comprises a second surface opposite to the first surface, a first heat dissipation conducting layer is arranged on the second surface, a first heat dissipation substrate is arranged on the first heat dissipation conducting layer, and a plurality of heat dissipation columns are arranged on the first heat dissipation substrate.

The utility model provides a pair of slim power module, include: the bridge arm comprises an insulating substrate, a first bridge arm patterned circuit layer, a second bridge arm patterned circuit layer, a first bridge arm power chip, a second bridge arm power chip, a first power electrode, a second power electrode, an output electrode, a first bridge arm control electrode, a second bridge arm control electrode, a first bridge arm conductive bridge and a second bridge arm conductive bridge; the first bridge arm patterned circuit layer and the second bridge arm patterned circuit layer are arranged on the first surface of the insulating substrate, the first bridge arm power chip is arranged on the first bridge arm patterned circuit layer, the second bridge arm power chip is arranged on the second bridge arm patterned circuit layer, the first bridge arm conductive bridge is erected above the first bridge arm power chip, and the second bridge arm conductive bridge is erected above the first bridge arm conductive bridge; the first bridge arm power chip is respectively and electrically connected with the first power electrode and the first bridge arm control electrode through the first bridge arm patterned circuit layer, the first bridge arm power chip is electrically connected with the output electrode through the first bridge arm conductive bridge and the second bridge arm patterned circuit layer in sequence, the second bridge arm power chip is electrically connected with the second power electrode through the second bridge arm conductive bridge, and the second bridge arm power chip is respectively and electrically connected with the second bridge arm control electrode and the output electrode through the second bridge arm patterned circuit layer. Compared with the prior art, the light and thin type LED lamp is light, thin and reliable, and low in processing cost.

Drawings

Fig. 1 is a schematic circuit diagram of a conventional power module;

FIG. 2 is a circuit schematic of another prior art power module;

fig. 3 is an expanded structural view of a thin power module provided by the present invention;

fig. 4 is a three-dimensional structure diagram of a thin power module provided by the present invention;

fig. 5 is a side view of a thin power module provided by the present invention;

fig. 6 is a first surface layout structure diagram of an insulating substrate of a thin power module according to the present invention;

fig. 7 is a heat dissipation structure diagram of a thin power module according to the present invention.

Detailed Description

The embodiments of the present invention will be described in detail below with reference to the drawings, and it should be understood that the embodiments described herein are only for the purpose of illustrating the present invention and are not to be construed as limiting the invention.

Specifically, in some practical applications, a thin power module as shown in fig. 3 to 7 includes: the bridge power circuit comprises an insulating substrate 100, a first bridge arm patterned circuit layer 101, a second bridge arm patterned circuit layer 102, a first bridge arm power chip 103, a second bridge arm power chip 104, a first power electrode 105, a second power electrode 106, an output electrode 107, a first bridge arm control electrode 108, a second bridge arm control electrode 109, a first bridge arm conductive bridge 110 and a second bridge arm conductive bridge 120; the first bridge arm patterned circuit layer 101 and the second bridge arm patterned circuit layer 102 are arranged on the first surface of the insulating substrate 100, the first bridge arm power chip 103 is arranged on the first bridge arm patterned circuit layer 101, the second bridge arm power chip 104 is arranged on the second bridge arm patterned circuit layer 102, the first bridge arm conductive bridge 110 is erected above the first bridge arm power chip 103, and the second bridge arm conductive bridge 120 is erected above the first bridge arm conductive bridge 110; the first bridge arm power chip 103 is respectively and electrically connected with the first power electrode 105 and the first bridge arm control electrode 108 through the first bridge arm patterned circuit layer 101, the first bridge arm power chip 103 is respectively and electrically connected with the output electrode 104 through the first bridge arm conductive bridge 110 and the second bridge arm patterned circuit layer 102 in sequence, the second bridge arm power chip 104 is electrically connected with the second power electrode 106 through the second bridge arm conductive bridge 120, and the second bridge arm power chip 104 is respectively and electrically connected with the second bridge arm control electrode 109 and the output electrode 107 through the second bridge arm patterned circuit layer 102. The first arm power chip 103 and the second arm power chip 104 may be a combination of an IGBT and a freewheeling diode, or may be power MOSFETs with freewheeling diodes.

Specifically, in some practical applications, the number of the first bridge arm power chips 103 is multiple, the first bridge arm conductive bridge 110 includes a first bridge arm conductive bridge main body 111, and multiple first connection ends 112 and multiple second connection ends 113 that extend outward from the first bridge arm conductive bridge main body 111, the multiple first connection ends 112 are respectively connected with the multiple corresponding first bridge arm power chips 103, and the multiple second connection ends 113 are connected with the second bridge arm patterned circuit layer 102. In some practical applications, the number of the first bridge arm power chips 103 is eight, the first bridge arm power chips are arranged on two sides of the first bridge arm patterned circuit layer 101 in two groups, the number of the plurality of first connection ends 112 is equal to the number of the first bridge arm power chips 103, the number of the plurality of second connection ends 113 is four, and the plurality of first connection ends 112 and the plurality of second connection ends 113 jointly provide mechanical support for the first bridge arm conductive bridge main body 111.

Specifically, in some practical applications, the second bridge arm conductive bridge 120 includes a second bridge arm conductive bridge main body 121, and a plurality of third connection ends 122 and a plurality of fourth connection ends 123 extending outward from the second bridge arm conductive bridge main body 121, where the plurality of third connection ends 122 are respectively connected to the plurality of corresponding second bridge arm power chips 104, and the fourth connection ends 123 are connected to the second power electrodes 106. In some practical applications, the number of the second bridge arm power chips 104 is eight, the eight second bridge arm power chips are arranged on two sides of the second bridge arm patterned circuit layer 102 in two groups, the number of the third connection ends 122 is the same as that of the second bridge arm power chips 104, the number of the fourth connection ends 123 is four, and the third connection ends 122 provide mechanical support for the second bridge arm conductive bridge main body 121.

Specifically, in some practical applications, a plurality of first bridge arm power chips 103 are disposed on the first bridge arm patterned circuit layer 101, a plurality of first insulating islands 140 are disposed between the plurality of first bridge arm power chips 103, first control conductive layers 141 are disposed in the plurality of first insulating islands 140, and the plurality of first bridge arm power chips 103 are electrically connected to adjacent first control conductive layers 141; the first bridge arm patterned circuit layer 101 further includes a first bridge arm control electrode conductive layer 150, and the first bridge arm control electrode 108 is electrically connected to the plurality of first bridge arm power chips 103 through the first bridge arm control electrode conductive layer 150 and the corresponding first control conductive layer 131. In some practical applications, the number of the first bridge arm power chips 103 is eight, the first bridge arm power chips are arranged on two sides of the first bridge arm patterned circuit layer 101 in two groups in a spaced and opposite manner, and the number of the first insulating islands 140 is two.

Specifically, in some practical applications, a plurality of second bridge arm power chips 104 are disposed on the second bridge arm patterned circuit layer 102, a plurality of second insulating islands 160 are disposed between the plurality of second bridge arm power chips 104, second control conductive layers 161 are disposed in the plurality of second insulating islands 160, and the plurality of second bridge arm power chips 104 are electrically connected to adjacent second control conductive layers 161; the second bridge arm patterned circuit layer 102 further includes a second bridge arm control electrode conductive layer 170, and the second bridge arm control electrode 109 is electrically connected to the plurality of second bridge arm power chips 104 through the second bridge arm control electrode conductive layer 170 and the corresponding second control conductive layer 161. In some practical applications, the number of second bridge arm power chips 104 is eight, and the power chips are arranged on two sides of second bridge arm patterned circuit layer 102 in two groups, and the number of second insulating islands 160 is two.

Specifically, in some implementations, first power electrode 105 and second power electrode 106 are sheet-like and are stacked in a spaced apart arrangement.

Specifically, in some practical applications, the insulating substrate 100 includes a second surface opposite to the first surface, the second surface is provided with a first heat dissipation conductive layer 190, the first heat dissipation conductive layer 190 is provided with a first heat dissipation substrate 200, and the first heat dissipation substrate 200 is provided with a plurality of heat dissipation pillars 201. The shape of the heat dissipation pillar 201 can be selected according to actual needs, and can be a cube, a cylinder or other specific shapes.

The above only is the preferred embodiment of the present invention, not limiting the scope of the present invention, all the equivalent structures or equivalent flow changes made by the contents of the specification and the drawings, or directly or indirectly applied to other related technical fields, are included in the same way in the protection scope of the present invention.

Claims (7)

1. A thin power module, comprising: the bridge arm comprises an insulating substrate, a first bridge arm patterned circuit layer, a second bridge arm patterned circuit layer, a first bridge arm power chip, a second bridge arm power chip, a first power electrode, a second power electrode, an output electrode, a first bridge arm control electrode, a second bridge arm control electrode, a first bridge arm conductive bridge and a second bridge arm conductive bridge; the first bridge arm patterned circuit layer and the second bridge arm patterned circuit layer are arranged on the first surface of the insulating substrate, the first bridge arm power chip is arranged on the first bridge arm patterned circuit layer, the second bridge arm power chip is arranged on the second bridge arm patterned circuit layer, the first bridge arm conductive bridge is erected above the first bridge arm power chip, and the second bridge arm conductive bridge is erected above the first bridge arm conductive bridge; the first bridge arm power chip is respectively and electrically connected with the first power electrode and the first bridge arm control electrode through the first bridge arm patterned circuit layer, the first bridge arm power chip is electrically connected with the output electrode through the first bridge arm conductive bridge and the second bridge arm patterned circuit layer in sequence, the second bridge arm power chip is electrically connected with the second power electrode through the second bridge arm conductive bridge, and the second bridge arm power chip is respectively and electrically connected with the second bridge arm control electrode and the output electrode through the second bridge arm patterned circuit layer.

2. The thin power module as claimed in claim 1, wherein the first bridge arm conductive bridge comprises a first bridge arm conductive bridge main body, and a first connection end and a second connection end extending outwards from the first bridge arm conductive bridge main body, the first connection end is connected with the first bridge arm power chip, and the second connection end is connected with the second bridge arm patterned circuit layer.

3. The thin power module as claimed in claim 1, wherein the second bridge arm conductive bridge comprises a second bridge arm conductive bridge main body, and a third connection end and a fourth connection end extending outwards from the second bridge arm conductive bridge main body, the third connection end is connected with the second bridge arm power chip, and the fourth connection end is connected with the second power electrode.

4. The thin power module as claimed in claim 1, wherein the first bridge arm patterned circuit layer is provided with a plurality of first bridge arm power chips, a plurality of first insulating islands are arranged between the first bridge arm power chips, first control conductive layers are respectively arranged in the first insulating islands, and the first bridge arm power chips are respectively electrically connected with adjacent first control conductive layers; the first bridge arm patterned circuit layer further comprises a first bridge arm control electrode conducting layer, and the first bridge arm control electrode is electrically connected with the plurality of first bridge arm power chips through the first bridge arm control electrode conducting layer and the corresponding first control conducting layer.

5. The thin power module as claimed in claim 1, wherein a plurality of second bridge arm power chips are disposed on the second bridge arm patterned circuit layer, a plurality of second insulating islands are disposed between the plurality of second bridge arm power chips, second control conductive layers are disposed in the plurality of second insulating islands, and the plurality of second bridge arm power chips are electrically connected to adjacent second control conductive layers; the second bridge arm patterned circuit layer further comprises a second bridge arm control electrode conducting layer, and the second bridge arm control electrode is electrically connected with the plurality of second bridge arm power chips through the second bridge arm control electrode conducting layer and the corresponding second control conducting layer.

6. The thin power module as claimed in claim 1, wherein the first power electrode and the second power electrode are in a sheet shape and are stacked and spaced apart.

7. The thin power module as claimed in claim 1, wherein the insulating substrate includes a second surface opposite to the first surface, the second surface is provided with a first heat-dissipating conductive layer, the first heat-dissipating conductive layer is provided with a first heat-dissipating substrate, and the first heat-dissipating substrate is provided with a plurality of heat-dissipating studs.

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