CN218548435U - Semiconductor circuit and intelligent power module - Google Patents

Abstract

The utility model provides a semiconductor circuit and intelligent power module, include: the driving IC chip pin is respectively and electrically connected with the plurality of capacitors and the plurality of groups of power modules; the multiple groups of power modules comprise RC insulated gate bipolar transistors and insulated gate bipolar transistors connected with the RC insulated gate bipolar transistors in parallel, the grid electrodes of the insulated gate bipolar transistors are connected with the grid electrodes of the RC insulated gate bipolar transistors, the source electrodes of the insulated gate bipolar transistors are connected with the source electrodes of the RC insulated gate bipolar transistors, the drain electrodes of the insulated gate bipolar transistors are connected with the drain electrodes of the RC insulated gate bipolar transistors, and the grid electrodes of the insulated gate bipolar transistors and the grid electrodes of the RC insulated gate bipolar transistors are respectively connected to pins of the driving IC chip. The utility model discloses small, simple process, production efficiency height.

Description

Semiconductor circuit and intelligent power module

Technical Field

The utility model relates to an intelligent power module technical field especially relates to a semiconductor circuit and intelligent power module.

Background

Intelligent Power modules, i.e. IPM (Intelligent Power Module), are a Power-driven class of products that combine Power electronics with integrated circuit technology. The intelligent power module integrates a power switch device and a high-voltage driving circuit and is internally provided with fault detection circuits such as overvoltage, overcurrent and overheat. The intelligent power module receives a control signal of the MCU to drive a subsequent circuit to work on one hand, and sends a state detection signal of the system back to the MCU on the other hand.

The existing intelligent power module wins larger and larger markets with the advantages of high integration degree, high reliability and the like, is particularly suitable for frequency converters of driving motors and various inverter power supplies, and is an ideal power electronic device for variable frequency speed regulation, metallurgical machinery, electric traction, servo drive and variable frequency household appliances.

However, the conventional intelligent power module is usually combined by an ICBT insulated gate bipolar transistor and an FRD diode, and the combined module has a large volume and high thermal resistance, so that the loss is large and the safety is low.

SUMMERY OF THE UTILITY MODEL

The utility model provides a semiconductor circuit and intelligent power module that module volume is little, simple process, production efficiency is high to above correlation technique not enough.

In order to solve the above technical problem, an embodiment of the present invention provides a semiconductor circuit, including: the driving IC chip pin is respectively and electrically connected with the plurality of capacitors and the plurality of groups of power modules;

the multiple groups of power modules comprise RC insulated gate bipolar transistors and insulated gate bipolar transistors connected with the RC insulated gate bipolar transistors in parallel, the grid electrodes of the insulated gate bipolar transistors are connected with the grid electrodes of the RC insulated gate bipolar transistors, the source electrodes of the insulated gate bipolar transistors are connected with the source electrodes of the RC insulated gate bipolar transistors, the drain electrodes of the insulated gate bipolar transistors are connected with the drain electrodes of the RC insulated gate bipolar transistors, and the grid electrodes of the insulated gate bipolar transistors and the grid electrodes of the RC insulated gate bipolar transistors are respectively connected to pins of the driving IC chip.

Preferably, the driving IC chip is a 6-channel IC chip, the plurality of groups of power modules include 6 groups, and each group is connected to the driving IC chip.

Preferably, the RC igbt includes a first igbt and a first diode, a source of the first igbt is connected to an anode of the first diode, and a drain of the first igbt is connected to a cathode of the first diode.

Preferably, the plurality of capacitors include a first capacitor, a second capacitor and a third capacitor, and the first capacitor, the second capacitor and the third capacitor are respectively connected in parallel to the pins of the driver IC chip.

Preferably, the driving IC chip includes: a high side driver circuit and a low side driver circuit, the high side driver circuit and the low side driver circuit being interconnected.

Preferably, the high-side driving circuit includes: the high-side undervoltage protection circuit comprises a high-side undervoltage protection circuit and a bootstrap circuit connected with the high-side undervoltage protection circuit, wherein the high-side undervoltage protection circuit is used for realizing a high-side driving undervoltage protection function, and the bootstrap circuit is used for realizing a bootstrap power supply function.

Preferably, an interlock and dead-band circuit is further connected between the high-side driver circuit and the low-side driver circuit.

Preferably, the RC igbt includes a first RC igbt and a second RC igbt, the semiconductor circuit further includes a first resistor, a second resistor, a third resistor, a fourth resistor, and a power supply, a first end of the first resistor is connected to the positive electrode of the power supply, a second end of the first resistor is connected to the drain of the first RC igbt, two ends of the second resistor are connected to the drain and the source of the first RC igbt, respectively, the third resistor is connected to the gate of the second RC igbt, and two ends of the fourth resistor are connected to the source of the second RC igbt and the negative electrode of the power supply, respectively.

In a second aspect, an embodiment of the present invention provides an intelligent power module, including a circuit aluminum substrate, an insulating layer, a circuit wiring, a plurality of circuit elements, a wire, a plurality of pins, a sealing resin, and the semiconductor circuit described above;

the semiconductor circuit is integrated in the circuit aluminum substrate, the insulating layer is disposed on the circuit aluminum substrate, the circuit wiring is disposed on the insulating layer, the plurality of circuit elements and the pins are disposed on the circuit wiring, the plurality of circuit elements are connected by the wires, and the sealing resin seals the circuit aluminum substrate, the insulating layer, the circuit wiring, the plurality of circuit elements, the wires and the pins.

Preferably, the back of the circuit aluminum substrate is provided with textures, and reinforcing ribs are further arranged among the pins.

Compared with the prior art, the utility model discloses through with drive IC chip pin respectively with a plurality of electric capacity, the multiunit power module electricity is connected; the multi-group power module comprises RC insulated gate bipolar transistors and insulated gate bipolar transistors connected with the RC insulated gate bipolar transistors in parallel, the grid electrodes of the insulated gate bipolar transistors are connected with the grid electrodes of the RC insulated gate bipolar transistors, the source electrodes of the insulated gate bipolar transistors are connected with the source electrodes of the RC insulated gate bipolar transistors, the drain electrodes of the insulated gate bipolar transistors are connected with the drain electrodes of the RC insulated gate bipolar transistors, and the grid electrodes of the insulated gate bipolar transistors and the grid electrodes of the RC insulated gate bipolar transistors are respectively connected to pins of the driving IC chip. Therefore, each path is formed by connecting an RC-IGBT and an IGBT in parallel, so that a module with larger current capacity than the RC-IGBT and the IGBT is formed, the area of a module substrate is reduced, the module production process is simplified, the production efficiency of the module is improved, the overall cost of the module is reduced, and meanwhile, the module also has an intelligent power module with high input impedance, low control power, simple driving circuit, high switching speed, reduced conduction voltage, large on-state current, small loss and better reverse recovery capacity.

Drawings

The present invention will be described in detail with reference to the accompanying drawings. The foregoing and other aspects of the invention will become more apparent and will be better understood from the following detailed description taken in conjunction with the accompanying drawings. In the drawings:

fig. 1 is a circuit diagram of a semiconductor circuit according to the present invention;

fig. 2 is a circuit diagram of the driving IC circuit of the present invention;

fig. 3 is a circuit diagram of the upper bridge power element RC-IGBT of the present invention;

fig. 4 is a circuit diagram of the upper bridge power element RC-IGBT closing of the present invention;

FIG. 5 is a circuit diagram of the internal aluminum substrate of the present invention;

fig. 6 is a schematic structural diagram of the intelligent power module of the present invention;

fig. 7 is a top view of the smart power module of the present invention;

fig. 8 is the utility model discloses the structure schematic diagram of intelligent power module's pin.

Detailed Description

The following detailed description of the embodiments of the present invention will be made with reference to the accompanying drawings.

The embodiments/examples set forth herein are specific embodiments of the present invention and are presented for illustrative purposes only, and are not intended to be construed as limitations on the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification of the present application, and these technical solutions include the technical solutions of making any obvious replacement or modification of the embodiments described herein, and all of them are within the scope of the present invention.

Example one

As shown in fig. 1-5, the present invention provides a semiconductor circuit, comprising: the driving circuit comprises a driving IC chip 0103 (HVIC), a plurality of capacitors 0104 and a plurality of groups of power modules 0102, wherein pins of the driving IC chip 0103 are electrically connected with the capacitors 0104 and the groups of power modules 0102 respectively.

The multiple groups of power modules 0102 include RC igbt and igbt connected in parallel with the RC igbt, a gate of the igbt is connected to a gate of the RC igbt, a source of the igbt is connected to a source of the RC igbt, a drain of the igbt is connected to a drain of the RC igbt, and the gate of the igbt and the gate of the RC igbt are connected to pins of the driver IC chip 0103, respectively.

The RC insulated gate bipolar transistor is an RC-IGBT, the insulated gate bipolar transistor is an IGBT, and the RC-IGBT is connected with the IGBT in parallel.

Specifically, the pins of the driving IC chip 0103 are electrically connected to the capacitors 0104 and the multiple groups of power modules 0102, respectively; the multiple groups of power modules 0102 include RC igbt and igbt connected in parallel with the RC igbt, a gate of the igbt is connected to a gate of the RC igbt, a source of the igbt is connected to a source of the RC igbt, a drain of the igbt is connected to a drain of the RC igbt, and the gate of the igbt and the gate of the RC igbt are connected to pins of the driver IC chip 0103, respectively. Therefore, each path is formed by connecting an RC-IGBT and an IGBT in parallel, so that a module with current capacity larger than that of the RC-IGBT and the IGBT is formed, the area of a module substrate is reduced, the module production process is simplified, the production efficiency of the module is improved, the overall cost of the module is reduced, and meanwhile, the module also has an intelligent power module with high input impedance, low control power, simple driving circuit, high switching speed, low on-state voltage, large on-state current, small loss and better reverse recovery capacity.

In this embodiment, the driving IC chip 0103 is a 6-channel IC chip, the multiple power modules 0102 include 6 sets, and each set is connected to the driving IC chip 0103.

Specifically, the multiple power modules 0102 include RC-IGBTs 1 and IGBT1, RC-IGBTs 2 and IGBT2, RC-IGBTs 3 and IGBT3, RC-IGBTs 4 and IGBT4, RC-IGBTs 5 and IGBT5, and RC-IGBTs 6 and IGBT6, and each group is connected in parallel.

Specifically, RC-IGBT1 and IGBT1 are A bridge upper arm, and RC-IGBT4 and IGBT4 are A bridge lower arm. The RC-IGBT2 and the IGBT2 are B bridge upper bridge arms, and the RC-IGBT5 and the IGBT5 are B bridge lower bridge arms. The RC-IGBT3 and the IGBT3 are upper bridge arms of an A bridge, and the RC-IGBT6 and the IGBT6 are lower bridge arms of the A bridge.

In this embodiment, the RC igbt includes a first igbt and a first diode, a source of the first igbt is connected to an anode of the first diode, and a drain of the first igbt is connected to a cathode of the first diode.

In this embodiment, the capacitors 0104 include a first capacitor C1, a second capacitor C2, and a third capacitor C3, and the first capacitor C1, the second capacitor C2, and the third capacitor C3 are respectively connected in parallel to the pins of the driver IC chip 0103.

Specifically, the ports HO1\ HO2\ HO3\ LO1\ LO2\ LO3 of the integrated 6-channel drive HVIC 0103 are respectively connected with the ports G of RC-IGBT1, IGBT1\ RC-IGBT2, TGBT2\ CR-IGBT3, IGBT3\ RC-IGBT4, IGBT4\ RC-IGBT5, IGBT5\ RC-IGBT6 and IGBT 6; the ports C of the RC-IGBT1 and the IGBT1, the RC-IGBT2 and the TGBT2, and the CR-IGBT3 and the IGBT3 are connected together, and a port P of a pin 1 of the IPM is led out.

The E ports of the RC-IGBT1 and the IGBT1, the RC-IGBT2 and the TGBT2, and the CR-IGBT3 and the IGBT3 are respectively connected with the C electrodes of the RC-IGBT4 and the IGBT4, the RC-IGBT5 and the IGBT5, and the RC-IGBT6 and the IGBT 6.

VB1\ U, VS1, VB2\ V, VS2, VB3\ W and VS3 of the 6-channel driving HVIC 0103 are respectively connected with the bootstrap capacitor 0104, VB1, VB2 and VB3 are led out to serve as VB1, VB2 and VB3 ports of pins 3, 5 and 7 of the IPM, and an RCIN port of the 6-channel driving HVIC 0103 is led out to serve as an RCIN port of pin 18 of the IPM.

The connection point of the upper bridge arm CR-IGBT3 and the IGBT3 of the C bridge and the lower bridge arm RC-IGBT6 and the IGBT6 is led out to serve as the 6 th pin W and VS3 port of the IPM; the connection point of the upper bridge arm CR-IGBT2 and the IGBT2 of the B bridge and the connection point of the lower bridge arm RC-IGBT5 and the IGB5T6 is led out to serve as a4 th pin V and VS2 port of the IPM; the connection point of the upper bridge arm CR-IGBT1 and the IGBT1 of the A bridge and the connection point of the lower bridge arm RC-IGBT4 and the IGBT4 is led out to serve as a No. 2 pin U and VS1 port of the IPM; and E ports of the lower bridge arm RC-IGBT4 and IGBT4, RC-IGBT5 and IGBT5, and RC-IGBT6 and IGBT6 of the A lower bridge arm are respectively led out as 8 th pin UN, 9 th pin VN and 10 th pin WN ports of the IPM.

Leading out an HIN1 port serving as an 11 th pin of the IPM from the HIN 1; the HIN2 is led out to be used as a12 th pin HIN2 port of the IPM; the HIN3 is led out to be used as a13 th pin HIN3 port of the IPM; LIN1 is led out as a14 th pin LIN1 port of IPM; LIN2 is led out to serve as a15 th pin LIN2 port of the IPM; LIN3 leads out as the 16 th pin LIN3 port of the IPM.

The 6 channel drives ITRIP +, ITRIP-of HVIC 0103, and an ITRIP port of 17 th pin and 18 th pin as IPM is led out; the 6 channel drives FLT/EN of HVIC 0103 and leads out FLT/EN port of 19 th pin as IPM; the 6 channel drives the RCIN of HVIC 0103 and leads out the RCIN port of the 20 th pin as IPM; VCC is led out to be used as a21 st pin VCC port of IPM; GND is drawn out as the 22 nd pin GND port of IPM.

In this embodiment, the driving IC chip 0103 includes: a high-side driver circuit 0201 and a low-side driver circuit 0202, said high-side driver circuit 0201 and said low-side driver circuit 0202 being connected to each other.

In the present embodiment, as shown in fig. 2, the high-side drive circuit 0201 includes: high side undervoltage protection circuit 0203 and with bootstrap circuit 0204 that high side undervoltage protection circuit 0203 is connected, high side undervoltage protection circuit 0203 is used for realizing high side drive undervoltage protection function, bootstrap circuit 0204 is used for realizing the bootstrap power supply function.

In this embodiment, an interlock and dead zone circuit 0205 is further connected between the high side driver circuit 0201 and the low side driver circuit 0202.

Specifically, the driving IC chip 0103 includes: the device comprises a high-side drive circuit 02013 channel and a low-side drive circuit 02023 channel; the high-side driving circuit 0201 internally comprises a high-side undervoltage protection circuit 0203 and a bootstrap circuit 0204, and realizes a high-side driving undervoltage protection function and a bootstrap power supply function; an interlock and dead zone circuit 0205 is connected between the high-side drive circuit 0201 and the low-side drive circuit 0202 to realize the functions of interlock and dead zone; the power supply circuit comprises a 5V LDO circuit and a 1.2V BANDGAP circuit, supplies 5V voltage to all circuits inside the HVIC and external circuits, and provides a stable 1.2V voltage reference for the HVIC and the external circuits; the power supply circuit is connected with the power supply undervoltage protection circuit 0203 to realize the function of power supply undervoltage protection; the HVIC also comprises an enabling circuit for realizing an enabling function; the overcurrent protection circuit 0203 realizes an overcurrent protection function; the overvoltage protection circuit 0203 realizes an overvoltage protection function; the temperature protection circuit 0203 realizes the temperature protection function; when the conditions of undervoltage, overcurrent, overvoltage, overtemperature and the like occur inside the error reporting circuit, an error reporting signal is output externally.

In this embodiment, as shown in fig. 3 to 4, the RC-insulated gate bipolar transistor (RC-IGBT) includes a first RC-insulated gate bipolar transistor 35 and a second RC-insulated gate bipolar transistor 36, the semiconductor circuit 0101 further includes a first resistor 31, a second resistor 32, a third resistor 33, a fourth resistor 34 and a power supply, a first end of the first resistor 31 is connected to the positive electrode of the power supply, a second end of the first resistor 31 is connected to the drain of the first RC-insulated gate bipolar transistor 35, two ends of the second resistor 32 are respectively connected to the drain and the source of the first RC-insulated gate bipolar transistor 35, the third resistor 33 is connected to the gate of the second RC-insulated gate bipolar transistor 36, and two ends of the fourth resistor 34 are respectively connected to the source of the second RC-insulated gate bipolar transistor 36 and the negative electrode of the power supply.

Specifically, an RC-IGBT (reverse conducting IGBT) has an n-type semiconductor material embedded in a p region of a collector, which serves as a reverse diode, thereby increasing reverse conductivity. Compared with the IGBT made of Si material, the reverse diode FRD (free wheeling diode chip) is not needed.

RC-IGBTs (reverse conducting IGBTs) have advantages over IGBTs of silicon material:

the IGBT chip or the FWD chip mainly includes a terminal region and a cell region, and the terminal portion can be shared when two devices are combined into one chip, so that the area of the terminal portion can be reduced.

The power of unit area is improved; the parallel connection effect is improved; the resistance ratio Rth (j-c) of the diode and the IGBT is increased; the temperature pulsation of the chip is reduced; the degree of freedom in designing the optimum thermosensitive module is improved.

Compared with the IGBT of the silicon material, the RC-IGBT device has the advantages of smaller area, smaller heat effect, high switching speed, reduced conduction voltage, large on-state current and low loss cost under the same condition. Is very suitable for a very high-integrated power module.

Specifically, the RC-IGBT (reverse conducting insulated gate bipolar transistor) is an IGBT derivative developed for energy conservation, emission reduction, economy and high efficiency application. A P-base region, an N-drift region, an N + buffer layer and an N + short-circuit region of the RC-IGBT form a PIN diode as shown in figure 3. The RC-IGBT is equivalent to an IGBT and a fast recovery diode which are connected in an anti-parallel mode, namely an IGBT unit cell and an FRD (fast recovery diode) unit cell are integrated on the same chip, and a compact current bleeder circuit is provided. This PIN diode conducts when the IGBT is subjected to a reverse voltage, which is also called a reverse conducting IGBT. The RC-IGBT has the advantages of small size, high power density, low cost, high reliability and the like. The RC-IGBT is used as a power element of the IPM upper bridge, so that the size of the IPM can be reduced, the power density can be improved, the cost can be reduced, and the reliability can be high.

The IGBT chip or the FWD chip mainly includes a terminal region and a cell region, and the terminal region can be shared when two devices are combined into one chip, and thus the area of the terminal region can be reduced, as shown in fig. 3. In general, the area ratio of the IGBT to the FWD in the conventional module is generally about 2, 1,rc-IGBT, and the FWD is integrated inside the chip under the condition of keeping the chip area of the conventional IGBT substantially consistent (slightly increased), so as to save the chip area of the FWD part, thereby saving about 1/3 of the total chip area, and meanwhile, the number of chips is small, the cost of welding the chips and bonding the bonding wires is also saved, and the chip production and manufacturing cost and the packaging test cost can be greatly reduced.

When both IGBT and FWD are in operation, the total temperature may rise more than that of a conventional module due to thermal interference between IGBT and FWD, and after all, the losses of both devices are on one chip, which is also referred to as the switching characteristic of the RC-IGBT chip.

In this embodiment, 0501 is an internal aluminum substrate of the smart power module in which an RC-IGBT and a normal IGBT are connected in parallel as a power element, as shown in fig. 5.

Wherein 0502 is a six channel HVIC;

0503 is copper sheet wire electrically connected to ground pin of six-channel HVIC and ground pin of power module;

0504 is a copper sheet wire electrically connected with the C electrodes of the RC-IGBT1 and the IGBT1, the RC-IGBT2 and the TGBT2, and the CR-IGBT3 and the P pin of the power module;

0505, a C pole of the RC-IGBT1 and the IGBT1, one end of the bootstrap capacitor C1, and an E pole of the RC-IGBT1 and an E pole of the IGBT1 are connected together through two metal wires, a routing pad PA2 is electrically connected with a copper sheet wiring with a U pin of the power module, and the routing pad PA2 is connected with the E pole of the RC-IGBT1 through the two metal wires;

0506 is that the other end of bootstrap capacitor C1, routing pad PA3 and VB1 pin of the power module are electrically connected with copper sheet routing, routing pad PA3 is connected with VB1 of six-channel HVIC through a metal wire;

0507, a C pole of the RC-IGBT2 and the IGBT2, one end of the bootstrap capacitor C2, and an E pole of the RC-IGBT2 and an E pole of the IGBT2 are connected together through two metal wires, a routing pad PA5 is electrically connected with a copper sheet wiring with a V pin of the power module, and the routing pad PA5 is connected with the E pole of the RC-IGBT2 through the two metal wires;

0508 is that the other end of bootstrap capacitor C2, routing pad PA6 and VB2 pin of power module are electrically connected with copper sheet routing, routing pad PA6 is connected with VB2 of six-channel HVIC through a metal wire;

0509, a C pole of the CR-IGBT3 and the IGBT3, one end of the bootstrap capacitor C3, and an E pole of the RC-IGBT3 are connected together through two metal wires, a routing pad PA7 is electrically connected with a copper sheet wiring with a W pin of the power module, and the routing pad PA7 is connected with the E pole of the RC-IGBT3 through two metal wires;

0510 the other end of bootstrap capacitor C2, wire bonding pad PA9 and VB3 pin of power module are electrically connected with copper sheet wiring, wire bonding pad PA9 is connected with VB3 of six-channel HVIC through a metal wire;

0511 a routing pad PA12 is electrically connected with a UN pin of the power module by a copper sheet wire, the routing pad PA12 is connected with an E pole of (RC-IGBT 1 and IGBT 1) by two metal wires;

0512 routing pad PA11 is electrically connected with copper sheet wiring with VN pin of power module, routing pad PA11 is connected with E pole of (RC-IGBT 2 and IGBT 2) through two metal wires;

0513 routing bonding pad PA10 and WN pin of power module are electrically connected with copper sheet wire, routing bonding pad PA10 is connected with E pole of (RC-IGBT 2 and IGBT 3) through two metal wires;

0514 routing bonding pad PA16 and HIN1 pin of power module electrically connected with copper sheet wire, bonding pad PA16 is connected with HIN1 of six-channel HVIC through a metal wire;

0515 a bonding pad PA18 is electrically connected with a HIN2 base pin of the power module by copper sheet wiring, and the bonding pad PA18 is connected with HIN2 of a six-channel HVIC through two metal wires;

0516 electrically connecting a routing pad PA19 and a HIN3 pin of the power module with a copper sheet wire, wherein the routing pad PA19 is connected with the HIN3 of the six-channel HVIC through two metal wires;

0517 is bonding pad PA20 and LIN1 pin of power module are electrically connected with copper sheet wire, bonding pad PA20 is connected with LIN1 of six-channel HVIC through a metal wire;

0518 routing bonding pad PA21 and LIN2 pin of power module are electrically connected with copper sheet wire, routing bonding pad PA21 is connected with LIN2 of six-channel HVIC through two metal wires;

0519 routing bonding pad PA22 and LIN3 pin of power module are electrically connected with copper sheet wire, routing bonding pad PA22 is connected with LIN3 of six-channel HVIC through two metal wires;

0520 is a routing pad PA23 electrically connected with the ITRIP + pin of the power module via copper sheet, and the routing pad PA23 is connected with the ITRIP of the six-channel HVIC via two metal wires;

0521 is a routing wire for connecting the routing pad PA24 with ITRIP-pin of power module electrically, the routing pad PA24 is connected with ITRIP-of six-channel HVIC through a metal wire;

0522 is a bonding pad PA24 electrically connected with the FLT/EN pin of the power module by a copper sheet wire, the bonding pad PA24 is connected with the FLT/EN of the six-channel HVIC by a metal wire;

0523 is wire bonding pad PA25 and RCIN pin of power module electrically connected with copper sheet wire, wire bonding pad PA25 is connected with RCIN of six-channel HVIC through two metal wires;

0524 is a routing pad PA26 electrically connected to the VCC pin of the power module by a copper sheet trace, the routing pad PA26 being connected to the VCC of the six-channel HVIC by two metal wires;

0525 the bonding pads PA15 and PA8 are connected with the G pole of (RC-IGBT 6 and IGBT 6); the wire bonding pad PA15 is connected with an LOU1 of the six-channel HVIC through a metal wire; the routing bonding pad PA8 is connected with the G pole of the IGBT6 through a metal wire;

0526 connecting the bonding pads PA14 and PA4 with the G pole of (RC-IGBT 5 and IGBT 5); the wire bonding pad PA15 is connected with an LOU2 of the six-channel HVIC through a metal wire; the routing bonding pad PA8 is connected with the G pole of the (RC-IGBT 5 and IGBT 5) through a metal wire;

0527 connecting the bonding pads PA13 and PA1 with the G pole of (RC-IGBT 4 and IGBT 4); the wire bonding pad PA13 is connected with an LOU3 of the six-channel HVIC through a metal wire; the routing bonding pad PA1 is connected with a G pole of the (RC-IGBT 4 and IGBT 4) through a metal wire;

0528 is a metal line connecting HOU1 of a six-channel HVIC and the G pole of (RC-IGBT 1 and IGBT 1);

0529 is a metal line connecting HOU2 of six-channel HVIC with the G-pole of (RC-IGBT 2 and IGBT 2);

0530 is a metal line connecting HOU3 of six-channel HVIC and G pole of (RC-IGBT 3 and IGBT 3);

0531 GND of six-channel HVIC is electrically connected with pin GND of IPM by copper wiring.

Example two

With reference to fig. 6-8, an embodiment of the present invention provides an intelligent power module 22, which includes a circuit aluminum substrate 23, an insulating layer 24, a circuit wiring 25, a plurality of circuit elements 27, a conducting wire 28, a plurality of pins 29, a sealing resin 31, and the semiconductor circuit 0101 of the first embodiment; the semiconductor circuit 0101 is integrated in the circuit aluminum substrate 23, the insulating layer 24 is provided on the circuit aluminum substrate 23, the circuit wiring 25 is provided on the insulating layer 24, the plurality of circuit elements 27 and the leads 29 are provided on the circuit wiring 25, the plurality of circuit elements 27 are connected to each other by the wires 28, and the sealing resin 31 seals the circuit aluminum substrate 23, the insulating layer 24, the circuit wiring 25, the plurality of circuit elements 27, the leads 28, and the leads 29.

Specifically, the circuit aluminum substrate 23 is provided with the integrated semiconductor circuit 0101, and the insulating layer 24 is provided to separate the circuit aluminum substrate 23 from the circuit wiring 25, the plurality of circuit components, and the like. The conducting wires 28 are used for conducting the circuit among the circuit elements 27, and the pins 29 are used for connecting an external power supply to supply power to the intelligent power module. The sealing resin 31 is used to seal the circuit aluminum substrate 23, the insulating layer 24, the circuit wiring 25, the plurality of circuit elements 27, the lead wires 28, and the plurality of leads 29, and has a good fixing effect.

In this embodiment, the circuit aluminum substrate 23 has a texture 26 formed on the rear surface thereof, and reinforcing ribs 33 are further provided between the plurality of leads 29.

In the present embodiment, the smart power module 22 includes a circuit aluminum substrate 23; the circuit wiring 25 formed on the insulating layer 24 provided on the surface of the circuit aluminum substrate 23, the circuit wiring as a whole being as shown in fig. 6, the rear surface of the circuit aluminum substrate 23 having a rugged texture 26; a circuit element 27 fixed to the circuit wiring 25; a metal wire 28 connecting the circuit element 27 and the circuit wiring 25; a lead 29 connected to the circuit wiring 25, the remaining portion being covered with a plating layer; the entire smart power module 30 is sealed with a sealing resin 31.

The manufacturing method of the intelligent power module 22 taking the RC-IGBT as the IPM upper bridge power element and the IGBT + FRD as the IPM lower bridge power element comprises the following steps:

forming an aluminum material into a suitable size as the circuit board 23 and forming the texture 26 on the back surface thereof by laser etching, grinding, or the like, providing the insulating layer 24 on the surface of the circuit board 23 and forming a copper foil on the insulating layer 24, forming the circuit wiring 25 from the copper foil by etching;

coating solder paste on specific positions of the circuit wiring 25;

copper material is formed into an appropriate shape and subjected to surface plating treatment to form the lead 29, as shown in fig. 8. In order to prevent the circuit element 27 from being damaged by static electricity in the subsequent processing procedure, specific positions of the pins 29 are connected through a reinforcing rib 33, as shown in fig. 4;

placing the circuit elements 27 and the pins 29 on solder paste;

the circuit element 27 and the lead 29 are fixed on the circuit wiring 25 by solidifying the solder paste by reflow soldering;

cleaning the residual scaling powder on the circuit substrate 23 by spraying, ultrasonic and other cleaning modes;

connecting the circuit element 27 and the circuit wiring 25 by a bonding wire;

if the circuit board 23 needs to be connected to a ground potential, the method further includes a step of transferring the insulating layer 24 through a transfer hole, and forming a connection between the ground potential of the circuit wiring 25 and the circuit board 23 through a bonding line;

sealing the elements by injection molding using a thermoplastic resin or transfer molding using a thermosetting resin;

cutting off the reinforcing ribs 33 of the leads 29 and forming the required shape;

and performing necessary tests through the test equipment, wherein the qualified person becomes the intelligent power module 22 which takes the RC-IGBT as the IPM upper bridge power element and the IGBT + FRD as the IPM lower bridge power element.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any tampering, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.

Claims (10)

1. A semiconductor circuit, comprising: the driving IC chip comprises a driving IC chip, a plurality of capacitors and a plurality of groups of power modules, wherein pins of the driving IC chip are electrically connected with the capacitors and the plurality of groups of power modules respectively;

the multiple groups of power modules comprise RC insulated gate bipolar transistors and insulated gate bipolar transistors connected with the RC insulated gate bipolar transistors in parallel, the grid electrodes of the insulated gate bipolar transistors are connected with the grid electrodes of the RC insulated gate bipolar transistors, the source electrodes of the insulated gate bipolar transistors are connected with the source electrodes of the RC insulated gate bipolar transistors, the drain electrodes of the insulated gate bipolar transistors are connected with the drain electrodes of the RC insulated gate bipolar transistors, and the grid electrodes of the insulated gate bipolar transistors and the grid electrodes of the RC insulated gate bipolar transistors are respectively connected to pins of the driving IC chip.

2. The semiconductor circuit according to claim 1, wherein the driver IC chip is a 6-channel IC chip, the plurality of groups of power modules include 6 groups, and each group is connected to the 6-channel IC chip, respectively.

3. The semiconductor circuit of claim 1, wherein the RC IGBT comprises a first IGBT and a first diode, wherein a source of the first IGBT is connected to an anode of the first diode, and wherein a drain of the first IGBT is connected to a cathode of the first diode.

4. The semiconductor circuit according to claim 1, wherein the plurality of capacitors includes a first capacitor, a second capacitor, and a third capacitor, and the first capacitor, the second capacitor, and the third capacitor are respectively connected in parallel to a pin of the driver IC chip.

5. The semiconductor circuit according to claim 1, wherein the driver IC chip comprises: a high side driver circuit and a low side driver circuit, the high side driver circuit and the low side driver circuit being interconnected.

6. The semiconductor circuit according to claim 5, wherein the high-side driver circuit comprises: the high-side undervoltage protection circuit comprises a high-side undervoltage protection circuit and a bootstrap circuit connected with the high-side undervoltage protection circuit, wherein the high-side undervoltage protection circuit is used for realizing a high-side driving undervoltage protection function, and the bootstrap circuit is used for realizing a bootstrap power supply function.

7. The semiconductor circuit of claim 6, wherein an interlock and deadband circuit is also connected between the high side drive circuit and the low side drive circuit.

8. The semiconductor circuit according to claim 1, wherein the RC igbt comprises a first RC igbt and a second RC igbt, the semiconductor circuit further comprises a first resistor, a second resistor, a third resistor, a fourth resistor, and a power supply, a first end of the first resistor is connected to a positive electrode of the power supply, a second end of the first resistor is connected to a drain electrode of the first RC igbt, two ends of the second resistor are connected to a drain electrode and a source electrode of the first RC igbt, respectively, the third resistor is connected to a gate electrode of the second RC igbt, and two ends of the fourth resistor are connected to a source electrode of the second RC igbt and a negative electrode of the power supply, respectively.

9. A smart power module comprising a circuit aluminum substrate, an insulating layer, a circuit wiring, a plurality of circuit elements, a wire, a plurality of pins, a sealing resin, and the semiconductor circuit according to any one of claims 1 to 8;

the semiconductor circuit is integrated in the circuit aluminum substrate, the insulating layer is disposed on the circuit aluminum substrate, the circuit wiring is disposed on the insulating layer, the plurality of circuit elements and the pins are disposed on the circuit wiring, the plurality of circuit elements are connected by the wires, and the sealing resin seals the circuit aluminum substrate, the insulating layer, the circuit wiring, the plurality of circuit elements, the wires and the pins.

10. The smart power module as claimed in claim 9, wherein the circuit aluminum substrate has a texture formed on a back surface thereof, and a reinforcing rib is further disposed between the plurality of pins.

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