CN212848395U - Power module - Google Patents
Power module Download PDFInfo
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- CN212848395U CN212848395U CN202021936136.0U CN202021936136U CN212848395U CN 212848395 U CN212848395 U CN 212848395U CN 202021936136 U CN202021936136 U CN 202021936136U CN 212848395 U CN212848395 U CN 212848395U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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Abstract
The utility model provides a power module, include: the circuit comprises an insulating substrate, a power unit, a decoupling capacitor, a power terminal and a driving terminal; the upper surface of the insulating substrate comprises a positive electrode metal layer, a negative electrode metal layer, an output electrode metal layer and a driving metal layer; the power unit is in a half-bridge circuit structure and is attached to the insulating substrate; the decoupling capacitor is connected with the power unit through the positive and negative metal layers on the insulating substrate; the power terminal comprises a positive electrode terminal, a negative electrode terminal and an output terminal; the positive electrode terminal is connected to the positive metal layer, the negative electrode terminal is connected to the negative metal layer, and the output terminal is connected to the output metal layer. The utility model discloses a mode of electric capacity decoupling zero has reduced the excessive pressure problem that the parasitic inductance in return circuit brought, adopts the mode that the whole module was moulded plastics to insulate and consolidate, compares in shell and encapsulating form, has reduced the volume of module.
Description
Technical Field
The utility model belongs to the technical field of power semiconductor device, more specifically relates to a power module.
Background
With the rapid development of the fields of transportation, aerospace and the like, new requirements are put forward on the existing power supply power module and the power supply system. The switching speed of a switching tube of a power module in a power supply system is continuously increased, the switching loss is continuously reduced, the working frequency of the converter can be continuously increased, and the size is continuously reduced. The increase of the switching speed can cause the generation of peak voltage in the switching-on process, which causes the problems of EMI, insulation failure and the like, and an effective method for limiting the peak voltage is to add a decoupling capacitor in the package to reduce the influence of parasitic inductance.
In a conventional commercial power module, a package structure is divided into a metal heat dissipation substrate, an insulating substrate, a power unit (a switch tube or a diode chip), a power terminal, potting gel, and a plastic housing from bottom to top. The part influencing the heat dissipation of the module is a heat dissipation substrate and an insulating substrate, and the thinner the heat dissipation substrate is, the better the heat dissipation effect is; the parts influencing the module insulation are potting gel and a plastic shell; the parts that affect the mechanical strength of the module are the heat sink base and the plastic housing. The packaging structure is optimized by selecting the packaging material with proper heat dissipation performance, insulation property and mechanical property, so that the volume and various performances of the whole module can be greatly improved. The power terminal and the driving terminal structure which are convenient to install can enable the parallel connection expansion application of the power module to be more convenient.
SUMMERY OF THE UTILITY MODEL
To the defect of prior art, the utility model aims at providing a power module aims at solving the problem that how to make power module volume miniaturization.
In order to achieve the above object, the present invention provides a power module, including: the circuit comprises an insulating substrate, a power unit, a decoupling capacitor, a power terminal and a driving terminal;
the upper surface of the insulating substrate comprises a positive electrode metal layer, a negative electrode metal layer, an output electrode metal layer and a driving metal layer; the positive electrode metal layer, the output electrode metal layer and the negative electrode metal layer are sequentially arranged on the upper surface from left to right, and the driving metal layers are positioned on two sides of the upper surface;
the power unit is in a half-bridge circuit structure and is attached to the insulating substrate;
the decoupling capacitor is connected with the power unit through a positive metal layer and a negative metal layer on the insulating substrate; the decoupling capacitor is used for being connected between a positive electrode and a negative electrode of the power unit so as to smooth the peak of the switching voltage of the power unit;
the power terminal comprises a positive electrode terminal, a negative electrode terminal and an output terminal; a positive electrode terminal is connected to the positive metal layer, a negative electrode terminal is connected to the negative metal layer, and an output terminal is connected to the output metal layer; the positive electrode terminal constitutes a positive electrode of the half-bridge circuit, the negative electrode terminal constitutes a negative electrode of the half-bridge circuit, and the output terminal constitutes an output electrode of the half-bridge circuit;
the drive terminals include a positive drive terminal and a negative drive terminal connected to the drive metal layer; the positive electrode drive terminal and the negative electrode drive terminal are respectively used for driving the positive electrode terminal and the negative electrode terminal;
the power unit, the decoupling capacitor, the power terminal and the driving terminal on the insulating substrate are mechanically reinforced and insulated and isolated from each other in an injection molding mode.
In an alternative embodiment, the half-bridge circuit comprises: an upper bridge arm switching tube and a lower bridge arm switching tube;
the upper bridge arm switching tube and the lower bridge arm switching tube respectively comprise N switching tube chips which are connected in parallel; n is an integer greater than or equal to 2.
In an alternative embodiment, the half-bridge circuit further comprises: an upper bridge arm diode and a lower bridge arm diode;
the upper bridge arm diode and the lower bridge arm diode respectively comprise M diode chips; m is an integer greater than or equal to 0 and less than N;
m of the N switch chip chips are reversely connected with one diode chip in parallel.
In an optional embodiment, when the upper bridge arm switching tube and the lower bridge arm switching tube are MOSFETs;
the drain electrode of the upper bridge arm switching tube and the cathode of the upper bridge arm diode are welded on the positive metal layer;
the source electrode of the upper bridge arm switching tube and the anode of the upper bridge arm diode are connected to the output electrode metal layer through bonding wires;
the drain electrode of the lower bridge arm switching tube and the cathode of the lower bridge arm diode are welded on the output electrode metal layer;
the source electrode of the lower bridge arm switching tube and the anode of the lower bridge arm diode are connected to the negative metal layer through bonding wires; or
When the upper bridge arm switching tube and the lower bridge arm switching tube are IGBTs;
the collector of the upper bridge arm switching tube and the cathode of the upper bridge arm diode are welded on the positive metal layer;
the emitting electrode of the upper bridge arm switching tube and the anode of the upper bridge arm diode are connected to the output electrode metal layer through bonding wires;
the collector of the lower bridge arm switching tube and the cathode of the lower bridge arm diode are welded on the output pole metal layer;
and the emitting electrode of the lower bridge arm switching tube and the anode of the lower bridge arm diode are connected to the negative metal layer through bonding wires.
In an alternative embodiment, the driving metal layer on one side of the upper surface of the insulating substrate is used for connecting a driving signal for driving a positive electrode terminal and a negative electrode terminal of the upper bridge arm; the driving metal layer on the other side of the upper surface of the insulating substrate is used for connecting driving signals for driving a positive electrode terminal and a negative electrode terminal of the lower bridge arm;
the drive metal layer of each side includes: a first positive drive metal layer and a negative drive metal layer; and a positive electrode driving terminal is welded on the first positive electrode driving metal layer, and a negative electrode driving terminal is welded on the negative electrode driving metal layer.
In an alternative embodiment, the driving metal layer of each side further includes: a second positive drive metal layer;
the driving circuit of the switching tube in each bridge arm is connected with a driving resistor in series, and the second positive driving metal layer is used for realizing the bridging of the driving resistor between the first positive driving metal layer and the second positive driving metal layer;
the grid electrode of each bridge arm switching tube is connected with a second positive electrode driving metal layer through a bonding wire, the second positive electrode driving metal layer is connected with one end of a driving resistor through the bonding wire, and the other end of the driving resistor is connected with a first positive electrode driving metal layer through the bonding wire;
the source electrode or the emitting electrode of each bridge arm switching tube is connected to the negative electrode driving metal layer through a bonding wire; and the source electrode or the emitter electrode of the switching tube is connected to the negative electrode driving metal layer to realize the driving loop, and the source electrode or the emitter electrode of the switching tube is connected to the negative electrode metal layer to realize the power loop.
In an optional embodiment, the decoupling capacitors are two, and the two decoupling capacitors are connected in parallel between the positive electrode and the negative electrode of the power unit.
In an alternative embodiment, the drive terminals are vertical pin terminals.
In an alternative embodiment, the power terminal has a screw thread built in at its upper end for connection to an external circuit by a screw.
Generally, through the utility model discloses above technical scheme who conceives compares with prior art, has following beneficial effect:
the utility model provides a power module uses full carborundum power device, encapsulates the half-bridge structure of vienna rectifier in power module, has compensatied the disappearance of this type of module. Compare in traditional power module, adopt the mode of capacitive decoupling, reduced the overvoltage problem that the parasitic inductance of return circuit brought, adopt the mode of full module moulding plastics to carry out the insulation and the reinforcement of each unit of power module, compare in shell and encapsulating form, reduced the volume of module. The insulating substrate with high mechanical strength is adopted, the installation of a radiating substrate is omitted, and the weight is reduced while the radiating performance is improved.
Drawings
Fig. 1 is a schematic diagram of an internal structure of a package structure of a small power module capable of being assembled in parallel quickly according to an embodiment of the present invention;
fig. 2 is an external structural schematic diagram of a package structure of a small power module capable of being assembled in parallel quickly according to an embodiment of the present invention;
fig. 3 is a schematic diagram of multi-module assembly of a package structure of a small power module capable of being assembled in parallel quickly according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a half-bridge circuit of a package structure of a small power module capable of being assembled in parallel according to an embodiment of the present invention;
the same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein: 1 is a positive electrode terminal, 2 is a negative electrode terminal, 3 is an output terminal, 4 is a lower-arm driving negative electrode terminal, 5 is a lower-arm driving positive electrode terminal, 6 is an upper-arm driving positive electrode terminal, 7 is an upper-arm driving negative electrode terminal, 8 is an upper-arm MOSFET chip, 9 is an upper-arm SBD chip, 10 is a lower-arm SBD chip, 11 is a lower-arm MOSFET chip, 12 is a decoupling capacitor, 13 is a driving resistor, 14 is an insulating substrate, 15 is a positive electrode copper layer, 16 is a negative electrode copper layer, 17 is an output copper layer, 18 is a lower-arm driving positive copper layer one, 19 is a lower-arm driving negative copper layer, 20 is a lower-arm driving positive copper layer two, 21 is an upper-arm driving positive copper layer one, 22 is an upper-arm driving negative copper layer, 23 is an upper-arm driving positive copper layer two, 24 is an injection-molded epoxy material, 25 is a thread of a power terminal, 26 is an upper-arm driving connecting plate, 27 is a, And 28 is a lower bridge arm driving connecting plate.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
To the above defect of current power module or improve the demand, the utility model provides a but small-size power module's of quick parallel assembly packaging structure aims at solving the excessive pressure problem that current power module inductance arouses to and promote the heat dispersion of module when reducing module volume weight again. The utility model discloses a mechanical structure that epoxy was moulded plastics and is replaced traditional encapsulating, plastic casing and metal heat dissipation base plate reduces the module body. Simultaneously the utility model provides a mode of this module parallel connection provides the connection design of a plurality of power module.
To achieve the above object, according to an aspect of the present invention, there is provided a package structure of a multi-chip parallel power module, comprising: the power unit comprises an insulating substrate, a power unit and a decoupling capacitor, wherein the power unit is attached to the insulating substrate; the power unit is a half-bridge circuit structure, including: the bridge arm comprises an upper bridge arm switching tube, an upper bridge arm diode, a lower bridge arm switching tube and a lower bridge arm switching tube, wherein the upper bridge arm switching tube is formed by connecting N upper bridge arm switching tube chips in parallel, the upper bridge arm diode is formed by connecting M upper bridge arm SBD (Schottky Barrier diode) chips in parallel, the lower bridge arm switching tube is formed by connecting N lower bridge arm switching tube chips in parallel, and the lower bridge arm diode is formed by connecting M lower bridge arm SBD chips in parallel; wherein N is a positive number greater than or equal to 2; wherein, M is an integer greater than or equal to 0, and when M is equal to 0, it means that there is no anti-parallel diode in the half-bridge circuit.
The drain electrode (MOSFET) or collector electrode (IGBT) of the switch chip and the cathode, the driving resistor and the decoupling capacitor of the SBD are welded on the insulating substrate, the source electrode (MOSFET) or emitter electrode (IGBT) and the grid electrode of the switch chip and the anode of the SBD chip are connected with the corresponding copper layer on the upper surface of the insulating substrate through lead bonding; the copper layer on the upper surface of the insulating substrate is connected with the corresponding terminal through wire bonding; all devices and terminals on the insulating substrate are insulated and isolated and mechanically reinforced in an injection molding mode, and preferably, the epoxy injection molding material is high-thermal-conductivity silicon dioxide doped epoxy resin.
The switch chip can be a silicon MOSFET chip, an IGBT chip, a silicon carbide MOSFET chip or a gallium nitride MOSFET chip; preferably, silicon carbide MOSFET chips are selected to achieve higher switching speeds and operating temperatures. The following embodiments of the present invention are exemplified by taking the switch chip as a MOSFET chip.
The SBD chip can adopt a silicon SBD chip or a silicon carbide SBD chip; preferably, a silicon carbide SBD chip is used.
Preferably, the terminal may be connected to a copper layer on an upper surface of the insulating substrate by soldering. The ultrasonic welding method is recommended to be used for forming mechanical and electrical connection with the copper layer on the upper surface of the insulating substrate, and the connection reliability is higher.
Preferably, the insulating substrate is divided into three layers, wherein the upper and lower layers are made of high-conductivity oxygen-free copper materials, and the middle layer is made of high-thermal-conductivity ceramic material Si with good mechanical property3N4(ii) a The surface of the copper layer of the insulating substrate is subjected to nickel plating treatment, so that the oxidation resistance of the surface is enhanced, and the reliability of wire bonding connection is improved.
The upper copper layer of the insulating substrate can be divided into: a positive copper layer, an output electrode (AC) copper layer, a negative copper layer, and upper and lower bridge arm driving signal copper layers; the distance between every two copper layers is larger than the electric insulation distance corresponding to the maximum working voltage of the power module; and the positive copper layer, the output electrode (AC) copper layer, the negative copper layer and the upper and lower bridge arm driving signal copper layers are electrically connected with the power switch chip by bonding wires.
In the case of operating voltages of several hundred volts or more, the spacing between the above-mentioned bonding surfaces should be not less than 1mm, preferably 1 mm.
The power chip is mounted and welded on the insulating substrate, and the top electrode is connected to the upper surface copper layer of the insulating substrate through wire bonding, so that a half-bridge circuit structure is formed. The upper bridge arm switching tube is formed by connecting four upper bridge arm switching tube chips in parallel, and is connected with the upper bridge arm diodes in an anti-parallel mode; the upper bridge arm diode is formed by connecting four upper bridge arm SBD chips in parallel; the lower bridge arm switching tube is composed of four lower bridge arm switching tube chips and is connected with the lower bridge arm diodes in an anti-parallel mode; the lower bridge arm diode is formed by connecting four lower bridge arm SBD chips in parallel;
the drain electrode (or collector electrode) of the upper bridge arm switch chip and the cathode of the upper bridge arm SBD chip are welded on the anode copper layer of the insulating substrate in a mounting manner;
the grid electrode of each upper bridge arm switch chip is connected to a small copper block which is closest to the upper bridge arm driving signal second copper layer through lead bonding;
the source electrode (or the emitter electrode) of each upper bridge arm switching chip is connected to the output electrode copper layer of the insulating substrate through wire bonding, and is connected to the upper bridge arm driving signal return copper layer through one wire bonding;
the drain electrode (or collector electrode) of the lower bridge arm switch chip and the cathode of the lower bridge arm SBD chip are pasted and welded on an output electrode copper layer of the insulating substrate;
the grid electrode of each lower bridge arm switch chip is connected to a small copper block which is closest to the second copper layer of the lower bridge arm driving signal through lead bonding;
the source electrode (or the emitter electrode) of each lower bridge arm switching chip is connected to the negative copper layer of the insulating substrate through wire bonding, and is connected to the lower bridge arm driving signal return copper layer through one wire bonding;
and each switch chip of the upper and lower bridge arms is provided with a driving resistor, two electrodes of the driving resistor are respectively welded on two copper layers of a driving circuit, and the driving resistor is electrically connected with the gate electrodes of the four switch chips of the upper bridge arm through bonding wires.
The grid electrodes of the switch tube chips are respectively connected with a driving resistor, so that the switching speeds of the switch tubes connected in parallel are consistent; in order to make the resistance value of the additional driving resistor more selectable, the resistance value of the driving resistor should be as small as possible, preferably 1 Ω -10 Ω; preferably, a source (or emitter) bonding wire of the switch chip adopts a Kelvin connection mode, so that the coupling effect between the driving loop and the power loop is reduced.
In the packaging structure, the upper and lower bridge arm switching tubes are respectively connected with the upper and lower bridge arm diodes in an anti-parallel mode to form a half-bridge circuit structure;
the positive copper layer of the insulating substrate forms a positive electrode of a half-bridge circuit structure through a main power positive electrode terminal;
the negative copper layer of the insulating substrate forms a negative electrode of a half-bridge circuit structure through a main power negative electrode terminal;
an output electrode copper layer of the insulating substrate forms an output electrode of a half-bridge circuit structure through a main power output terminal;
the upper bridge arm driving signal first copper layer forms an upper bridge arm grid driving electrode of a half-bridge circuit structure through an upper bridge arm driving signal terminal;
an upper bridge arm source electrode (or an emitter electrode) driving electrode of a half-bridge circuit structure is formed by an upper bridge arm driving signal loop copper layer through an upper bridge arm driving signal loop terminal;
the lower bridge arm driving signal first copper layer forms a lower bridge arm grid driving electrode of a half-bridge circuit structure through a lower bridge arm driving signal terminal;
the lower bridge arm driving signal loop copper layer forms a lower bridge arm source electrode (or an emitting electrode) driving electrode of a half-bridge circuit structure through a lower bridge arm driving signal loop terminal;
preferably, the insulating substrate block is welded with two decoupling capacitors, and the two capacitors form a parallel connection relationship, so that a better decoupling effect can be provided.
Preferably, the decoupling capacitor is a multilayer ceramic capacitor with low equivalent series inductance (ESL), so that the dynamic decoupling characteristic is better; the capacitance value of a single capacitor is in the order of tens of nanohenries.
Furthermore, the packaging structure of module is applicable to wide bandgap semiconductor power modules such as silicon power module and carborundum, gallium nitride equally.
Fig. 1 is a schematic diagram of an internal structure of a package structure of a small power module capable of being assembled in parallel quickly according to an embodiment of the present invention; the bridge-type three-phase.
As shown in fig. 1, the first lower-bridge-arm driving positive copper layer 18 and the second lower-bridge-arm driving negative copper layer 19 are two long copper layers on the right side, and the second lower-bridge-arm driving positive copper layer 20 is a middle 4 small metal layers. Similarly, the upper arm driving positive copper layer one 21 and the upper arm driving negative copper layer 22 are two long copper layers on the left side, and the upper arm driving positive copper layer two 23 is 4 small metal layers in the middle.
In the dynamic switching process, the decoupling capacitor 12 achieves the decoupling effect, and plays a role in dynamically decoupling parasitic inductances of the main power positive electrode terminal 1 and the main power negative electrode terminal 2, so that voltage spikes borne in the switching-off process of the switching chip are reduced. The source electrode (or collector electrode) driving leads of the upper and lower bridge arm switching tubes are connected in a Kelvin mode, so that the coupling effect between a driving loop and a power loop is reduced; the copper layer on the upper surface of the insulating substrate is divided into a positive copper layer 15, a negative copper layer 16, an output copper layer 17, a first lower bridge arm driving positive copper layer 18, a second lower bridge arm driving negative copper layer 19, a second lower bridge arm driving positive copper layer 20, a first upper bridge arm driving positive copper layer 21, a second upper bridge arm driving negative copper layer 22 and a second upper bridge arm driving positive copper layer 23; the grid of each switching tube chip has all linked a drive resistor 13 outward, welds at drive anodal copper layer both ends, and drive resistor resistance is 1 omega for the switch between the parallelly connected switching tube keeps unanimous constantly. The upper bridge arm and the lower bridge arm respectively comprise 4 switch chips and 4 diodes; the upper layer metal of the insulating substrate is made of an oxygen-free copper material, and the surface of the insulating substrate is subjected to nickel plating treatment, so that the oxidation resistance of the surface is enhanced, and the wire bonding is facilitated.
As shown in fig. 2, which is an external structural schematic diagram of the packaging structure provided by the embodiment of the present invention, the copper layer is exposed on the lower surface of the insulating substrate, and the other parts are transferred for injection molding, and the epoxy material 24 is injected.
As shown in fig. 3, it is a schematic view of a multi-module assembly of the package structure according to an embodiment of the present invention; 26 is an upper bridge arm driving connecting plate, 27 is a main power terminal connecting plate, and 28 is a lower bridge arm driving connecting plate; the driving connecting plate comprises a driving chip and other devices and provides voltage input between the driving positive electrode and the driving negative electrode; the main power terminal connecting board has 5 layers in total, 3 conductor layers and 2 insulating layers in the middle, the middle of each power terminal comprises a thread 25, and the conductor layers are respectively connected with the positive electrode, the negative electrode and the output electrode of each power module by adopting M2 screws to realize the parallel input and output among the modules.
Fig. 4 is a schematic diagram of a half-bridge circuit corresponding to the package structure according to an embodiment of the present invention; the half-bridge circuit structure comprises: the main power positive electrode terminal 1, the main power negative electrode terminal 2, the main power output terminal 3, the lower bridge arm driving negative electrode terminal 4, the lower bridge arm driving positive electrode terminal 5, the upper bridge arm driving positive electrode terminal 6 and the upper bridge arm driving positive electrode terminal 7.
It will be understood by those skilled in the art that the foregoing is merely a preferred embodiment of the present invention, and is not intended to limit the invention to the particular forms disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.
Claims (9)
1. A power module, comprising: the circuit comprises an insulating substrate, a power unit, a decoupling capacitor, a power terminal and a driving terminal;
the upper surface of the insulating substrate comprises a positive electrode metal layer, a negative electrode metal layer, an output electrode metal layer and a driving metal layer; the positive electrode metal layer, the output electrode metal layer and the negative electrode metal layer are sequentially arranged on the upper surface from left to right, and the driving metal layers are positioned on two sides of the upper surface;
the power unit is in a half-bridge circuit structure and is attached to the insulating substrate;
the decoupling capacitor is connected with the power unit through a positive metal layer and a negative metal layer on the insulating substrate; the decoupling capacitor is used for being connected between a positive electrode and a negative electrode of the power unit so as to smooth the peak of the switching voltage of the power unit;
the power terminal comprises a positive electrode terminal, a negative electrode terminal and an output terminal; a positive electrode terminal is connected to the positive metal layer, a negative electrode terminal is connected to the negative metal layer, and an output terminal is connected to the output metal layer; the positive electrode terminal constitutes a positive electrode of the half-bridge circuit, the negative electrode terminal constitutes a negative electrode of the half-bridge circuit, and the output terminal constitutes an output electrode of the half-bridge circuit;
the drive terminals include a positive drive terminal and a negative drive terminal connected to the drive metal layer; the positive electrode drive terminal and the negative electrode drive terminal are respectively used for driving the positive electrode terminal and the negative electrode terminal;
the power unit, the decoupling capacitor, the power terminal and the driving terminal on the insulating substrate are mechanically reinforced and insulated and isolated from each other in an injection molding mode.
2. The power module of claim 1, wherein the half-bridge circuit comprises: an upper bridge arm switching tube and a lower bridge arm switching tube;
the upper bridge arm switching tube and the lower bridge arm switching tube respectively comprise N switching tube chips which are connected in parallel; n is an integer greater than or equal to 2.
3. The power module of claim 2, wherein the half-bridge circuit further comprises: an upper bridge arm diode and a lower bridge arm diode;
the upper bridge arm diode and the lower bridge arm diode respectively comprise M diode chips; m is an integer greater than or equal to 0 and less than N;
m of the N switch chip chips are reversely connected with one diode chip in parallel.
4. The power module of claim 2 or 3, wherein when the upper and lower leg switching tubes are MOSFETs;
the drain electrode of the upper bridge arm switching tube and the cathode of the upper bridge arm diode are welded on the positive metal layer;
the source electrode of the upper bridge arm switching tube and the anode of the upper bridge arm diode are connected to the output electrode metal layer through bonding wires;
the drain electrode of the lower bridge arm switching tube and the cathode of the lower bridge arm diode are welded on the output electrode metal layer;
the source electrode of the lower bridge arm switching tube and the anode of the lower bridge arm diode are connected to the negative metal layer through bonding wires; or
When the upper bridge arm switching tube and the lower bridge arm switching tube are IGBTs;
the collector of the upper bridge arm switching tube and the cathode of the upper bridge arm diode are welded on the positive metal layer;
the emitting electrode of the upper bridge arm switching tube and the anode of the upper bridge arm diode are connected to the output electrode metal layer through bonding wires;
the collector of the lower bridge arm switching tube and the cathode of the lower bridge arm diode are welded on the output pole metal layer;
and the emitting electrode of the lower bridge arm switching tube and the anode of the lower bridge arm diode are connected to the negative metal layer through bonding wires.
5. The power module of claim 4, wherein the driving metal layer on the upper surface of the insulating substrate is used for connecting a driving signal for driving the positive electrode terminal and the negative electrode terminal of the upper bridge arm; the driving metal layer on the other side of the upper surface of the insulating substrate is used for connecting driving signals for driving a positive electrode terminal and a negative electrode terminal of the lower bridge arm;
the drive metal layer of each side includes: a first positive drive metal layer and a negative drive metal layer; and a positive electrode driving terminal is welded on the first positive electrode driving metal layer, and a negative electrode driving terminal is welded on the negative electrode driving metal layer.
6. The power module of claim 5, wherein the drive metal layer of each side further comprises: a second positive drive metal layer;
the driving circuit of the switching tube in each bridge arm is connected with a driving resistor in series, and the second positive driving metal layer is used for realizing the bridging of the driving resistor between the first positive driving metal layer and the second positive driving metal layer;
the grid electrode of each bridge arm switching tube is connected with a second positive electrode driving metal layer through a bonding wire, the second positive electrode driving metal layer is connected with one end of a driving resistor through the bonding wire, and the other end of the driving resistor is connected with a first positive electrode driving metal layer through the bonding wire;
the source electrode or the emitting electrode of each bridge arm switching tube is connected to the negative electrode driving metal layer through a bonding wire; and the source electrode or the emitter electrode of the switching tube is connected to the negative electrode driving metal layer to realize the driving loop, and the source electrode or the emitter electrode of the switching tube is connected to the negative electrode metal layer to realize the power loop.
7. The power module of claim 1, wherein the decoupling capacitors are two, and the two decoupling capacitors are connected in parallel between a positive electrode and a negative electrode of the power cell.
8. The power module of claim 1, wherein the drive terminals are vertical pin terminals.
9. The power module of claim 1, wherein the power terminal has a screw thread built into an upper end thereof, and is connected to an external circuit by a screw.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021936136.0U CN212848395U (en) | 2020-09-07 | 2020-09-07 | Power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210100128A1 (en) * | 2019-09-26 | 2021-04-01 | Ohio State Innovation Foundation | Low inductance power module with vertical power loop structure and insulated baseplates |
| CN113380738A (en) * | 2021-05-07 | 2021-09-10 | 西安交通大学 | Direct integrated phase transition radiating carborundum power module packaging structure |
| CN113764386A (en) * | 2021-09-09 | 2021-12-07 | 黄山谷捷散热科技有限公司 | Low-parasitic stacked structure and packaging process of multi-unit power integrated module |
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2020
- 2020-09-07 CN CN202021936136.0U patent/CN212848395U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210100128A1 (en) * | 2019-09-26 | 2021-04-01 | Ohio State Innovation Foundation | Low inductance power module with vertical power loop structure and insulated baseplates |
| US11758697B2 (en) * | 2019-09-26 | 2023-09-12 | Ohio State Innovation Foundation | Low inductance power module with vertical power loop structure and insulated baseplates |
| US12004331B2 (en) | 2019-09-26 | 2024-06-04 | Ohio State Innovation Foundation | Low inductance power module with vertical power loop structure and insulated baseplates |
| CN113380738A (en) * | 2021-05-07 | 2021-09-10 | 西安交通大学 | Direct integrated phase transition radiating carborundum power module packaging structure |
| CN113380738B (en) * | 2021-05-07 | 2024-05-07 | 西安交通大学 | Direct integrated phase-change radiating silicon carbide power module packaging structure |
| CN113764386A (en) * | 2021-09-09 | 2021-12-07 | 黄山谷捷散热科技有限公司 | Low-parasitic stacked structure and packaging process of multi-unit power integrated module |
| CN113764386B (en) * | 2021-09-09 | 2023-04-07 | 黄山谷捷股份有限公司 | Low-parasitic stacking structure and packaging process of multi-unit power integrated module |
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