CN210778570U - Power semiconductor module, motor assembly and electric vehicle - Google Patents
Power semiconductor module, motor assembly and electric vehicle Download PDFInfo
- Publication number
- CN210778570U CN210778570U CN201921184385.6U CN201921184385U CN210778570U CN 210778570 U CN210778570 U CN 210778570U CN 201921184385 U CN201921184385 U CN 201921184385U CN 210778570 U CN210778570 U CN 210778570U
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- power semiconductor
- terminal
- chip
- conductive layer
- semiconductor module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40095—Kinked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The present disclosure relates to a power semiconductor module, a motor assembly and an electric vehicle, the power semiconductor module comprising a plurality of power semiconductor chips (1), a heat-dissipating substrate (2) having a conductive layer (21), and a metallic connection strip (3), the power semiconductor chips (1) being arranged on the conductive layer (21) of the heat-dissipating substrate (2), the metallic connection strip (3) being connected between the power semiconductor chips (1) and the conductive layer (21) and/or between two power semiconductor chips (1). Through above-mentioned technical scheme, adopt the metallic interconnect area to replace partial metal bonding wire among the module among the prior art, greatly reduced in the module use because the problem of the reliability reduction that the metal bonding wire became invalid and arouse, but simultaneously greatly reduced module parasitic inductance, in addition, compare in the metal bonding wire, the shared space of metallic interconnect area is littleer, can make this power semiconductor module's size reduce greatly, satisfies the requirement of spatial arrangement.
Description
Technical Field
The present disclosure relates to the field of vehicle control technologies, and in particular, to a power semiconductor module, a motor assembly, and an electric vehicle.
Background
The conventional power semiconductor module is composed of a power semiconductor chip, a metal bonding wire, a heat dissipation substrate, a resin case with a terminal, a metal substrate heat sink, a flux and silica gel.
The structure is as follows: the lower surface of the power semiconductor chip is directly welded on the radiating substrate, then the radiating substrate attached with the power semiconductor chip is welded with the metal substrate heat sink, then the resin shell with the terminal is connected with the metal substrate heat sink, the upper surface of the power semiconductor chip adopts a thin metal bonding wire to realize electrical connection in a bonding mode, and finally the upper surface of the chip adopts silica gel to cover.
The metal bonding wire lead bonding structure needs a certain area to bond the heat dissipation substrate and the terminal, so that the module size is large, and the module power density is low. Secondly, as the current density of the power semiconductor chip is larger and smaller, the power semiconductor chip with small size cannot mount all the required bonding wires thereon, and meanwhile, the metal bonding wires have large failure risk, so that the reliability of the module is reduced, and the module has larger parasitic inductance.
SUMMERY OF THE UTILITY MODEL
An object of the present disclosure is to provide a power semiconductor module, a motor assembly, and an electric vehicle, which are high in reliability and small in parasitic inductance.
In order to achieve the above object, the present disclosure provides a power semiconductor module including a plurality of power semiconductor chips, a heat dissipation substrate having a conductive layer, and a metal connection strap, the power semiconductor chips being disposed on the conductive layer of the heat dissipation substrate, the metal connection strap being connected between the power semiconductor chips and the conductive layer, and/or between two of the power semiconductor chips.
Optionally, the power semiconductor module further includes a power terminal, the conducting layer includes a first conducting layer, a second conducting layer and a third conducting layer that are arranged at intervals, the power semiconductor chip is configured with a first chip set and a second chip set, the power terminal includes an anode terminal, a negative terminal and an alternating current terminal, the first conducting layer is provided with the first chip set and the anode terminal, the third conducting layer is provided with the second chip set and the alternating current terminal, the second conducting layer is provided with the negative terminal, the first chip set passes through the metal connecting band and the third conducting layer is connected, and the second chip set passes through the metal connecting band and the second conducting layer is connected.
Optionally, the power semiconductor module further includes a control terminal, where the control terminal includes a D-pole terminal, an S-pole terminal, and a G-pole terminal, the D-pole terminal is connected to the lower surface of the power semiconductor chip, and the S-pole terminal is connected to the S-pole of the upper surface of the power semiconductor chip; and the G pole terminal is connected with the G pole on the upper surface of the power semiconductor chip.
Optionally, the power semiconductor module further includes a bonding wire, the S-pole terminal and the G-pole terminal are connected to the upper surface of the power semiconductor chip through the bonding wire, and the D-pole terminal is connected to the lower surface of the power semiconductor chip through the conductive layer.
Optionally, the first chip set and the second chip set both adopt a combination of an IGBT chip and a SiC chip.
Optionally, the power semiconductor module further comprises a plastic package body, and the plastic package body is used for molding the module.
Optionally, the power semiconductor chip and the terminal are fixed on the conductive layer by means of soldering, sintering or adhesive connection.
Optionally, the heat dissipation substrate is a copper-clad insulating substrate, and the conductive layer is a copper skin layer covered by the copper-clad insulating substrate.
Optionally, the metal connecting belt is an aluminum belt or a copper belt.
The present disclosure also provides an electric machine assembly including the power semiconductor module.
The present disclosure also provides an electric vehicle including the motor assembly.
Through above-mentioned technical scheme, adopt the metallic interconnect area to replace partial metal bonding wire among the module among the prior art, greatly reduced in the module use because the problem of the reliability reduction that the metal bonding wire became invalid and arouse, but simultaneously greatly reduced module parasitic inductance, in addition, compare in the metal bonding wire, the shared space of metallic interconnect area is littleer, can make this power semiconductor module's size reduce greatly, satisfies the requirement of spatial arrangement.
Additional features and advantages of the disclosure will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description serve to explain the disclosure without limiting the disclosure. In the drawings:
fig. 1 is a side cross-sectional view of a power semiconductor module of an alternative embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a power semiconductor module according to an alternative embodiment of the present disclosure.
Description of the reference numerals
1 power semiconductor chip 2 heat dissipation substrate
3 metal connecting belt 4 power terminal
5 control terminal 6 bonding wire
7 plastic-sealed body 11 first chip group
12 second chip set 21 conductive layer
211 first conductive layer 212 second conductive layer
213 third conductive layer 41 Anode terminal
42 negative electrode terminal 43 AC terminal
51D pole terminal and 52S pole terminal
22 insulating layer 23 lower copper layer
Detailed Description
The following detailed description of specific embodiments of the present disclosure is provided in connection with the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present disclosure, are given by way of illustration and explanation only, not limitation.
As shown in fig. 1 to 2, the present disclosure provides a power semiconductor module, which may include a plurality of power semiconductor chips 1, a heat dissipation substrate 2 having a conductive layer 21, and a metal connection tape 3, wherein the power semiconductor chips 1 may be disposed on the conductive layer 21 of the heat dissipation substrate 2, specifically, the lower surfaces of the power semiconductor chips 1 are electrically connected to the conductive layer 21, the metal connection tape 3 may be connected between the upper surface of the power semiconductor chip 1 and the conductive layer 21 to achieve electrical connection, and/or between the upper surfaces of two power semiconductor chips 1 to achieve electrical connection, and the heat dissipation substrate 2 is used for performing heat dissipation processing on the power semiconductor chips 1.
Through the technical scheme, the metal connecting band 3 is adopted to replace part of metal bonding wires in the module in the prior art, the problem of reliability reduction caused by failure of the metal bonding wires in the use process of the module is greatly reduced, and meanwhile, the parasitic inductance of the module can be greatly reduced.
Specifically, as shown in fig. 2, the power semiconductor module may further include a power terminal 4, the conductive layer 21 may include a first conductive layer 211, a second conductive layer 212, and a third conductive layer 213 that are disposed at intervals, the power semiconductor chip 1 may be configured with a first chip group 11 and a second chip group 12, the power terminal 4 may include an anode terminal 41, a cathode terminal 42, and an ac terminal 43, the anode terminal 41 and the cathode terminal 42 may be connected to a battery pack of a vehicle to input a direct current to the power semiconductor module, the input direct current is inverted into an alternating current by an inverting function of the power semiconductor chip 1, and the alternating current is output via the ac terminal 43 and connected to the motor.
Wherein, the first conducting layer 211 can be provided with a first chip set 11 and an anode terminal 41, the lower surfaces of two power semiconductor chips 1 in the first chip set 11 can be fixed on the first conducting layer 211, one end of the anode terminal 41 can also be fixed on the first conducting layer 211, the other end is used for connecting with a battery pack, the third conducting layer 213 can be provided with a second chip set 12 and an ac terminal 43, the lower surfaces of two power semiconductor chips 1 in the second chip set 12 can be fixed on the third conducting layer 213, one end of the ac terminal 43 can be fixed on the third conducting layer 213, the other end can be connected with a vehicle motor, the second conducting layer 212 can be provided with a negative terminal 42, the upper surface of the power semiconductor chip 1 in the first chip set 11 can be electrically connected with the third conducting layer 213 through a metal connecting band 3, the upper surface of the power semiconductor chip 1 in the second chip group 12 can also be electrically connected with the second conductive layer 212 through the metal connecting band 3, so that the electrical connection between the power terminal 4 and the upper surface of the power semiconductor chip 1 is realized, and the normal operation of the module is ensured.
Furthermore, as shown in fig. 1 and 2, the power semiconductor module may further include a control terminal 5, the control terminal 5 may include a D-pole terminal 51, an S-pole terminal 52, and a G-pole terminal 53, the D-pole terminal 51 may be connected to the lower surface of the power semiconductor chip 1, the S-pole terminal 52 and the G-pole terminal 53 may be connected to the upper surface of the power semiconductor chip 1, and specifically, the S-pole terminal 52 may be connected to the S-pole of the upper surface of the power semiconductor chip 1; the G-pole terminal 53 may be connected to the G-pole of the upper surface of the power semiconductor chip 1. During the module conduction process, short circuit and overcurrent protection are performed by monitoring the voltage between the S pole terminal 52 and the D pole terminal 51. In order to ensure the normal operation of the power semiconductor chip 1, the control terminal 5 may also be used as a gate signal terminal to input a voltage signal, thereby implementing the on/off of the power semiconductor module. Specifically, the power semiconductor module may further include a bonding wire 6, the S-pole terminal 52 and the G-pole terminal 53 may be connected to the upper surface of the power semiconductor chip 1 through the bonding wire 6, and the D-pole terminal 51 may be connected to the lower surface of the power semiconductor chip 1 through the conductive layer 21, in this embodiment, the S-pole terminal 52, the G-pole terminal 53 and the power semiconductor chip 1 are connected by using the bonding wire 6, because the currents output by the S-pole terminal 52 and the G-pole terminal 53 are small, and may be directly connected through two bonding wires 6, which occupies a small space and saves cost.
As an alternative embodiment, the first chip set 11 and the second chip set 12 both use a combination of Si IGBT (insulated gate bipolar transistor) chips and SiC diode chips, and may also use a parallel connection mode of SiC MOSFET and Si diode, or a parallel connection mode of SiC MOSFET and SiC diode, or only SiC MOSFET, which is not limited by the disclosure. The power semiconductor module is packaged by a specific circuit bridge to realize a specific function, for example, a function of converting direct current into alternating current can be realized by a combination of an IGBT chip and a SiC chip.
As shown in fig. 1, the power semiconductor module may further include a molding body 7, where the molding body 7 is configured to mold the module, for example, a molding material such as epoxy resin may be selected for molding, the epoxy resin has good high temperature resistance, and the service life of the module can be effectively prolonged, and compared with a conventional silicone gel structure, because the material is softer, the heat dissipation substrate 2 can stretch and retract without hindrance, so that the pressure of the solder 10 under the power semiconductor chip 1 is concentrated at the corner of the solder 10, and the risk of failure of the solder 10 is large, and in addition, due to the thermal degradation of the silicone gel, the higher the temperature, the shorter the service life of the silicone gel is, and the structural strength of the molding body 7 is large, so that the stability of the module can be effectively improved, and in addition, the structure such as a metal substrate heat sink in the prior art can be omitted by using the molding body 7, so that the structure of the.
The power semiconductor chip 1 and the terminal may be fixed to the conductive layer 21 by soldering with the solder 10, but the present disclosure is not limited to the connection method between the power semiconductor chip 1 and the conductive layer 21 and the connection method between the terminal and the conductive layer 21, and the connection may be performed by sintering, pressure bonding, adhesion, or the like, in addition to the soldering method described above.
Optionally, the heat dissipation substrate 2 may be a copper-clad insulating substrate, the conductive layer 21 is a copper clad layer covered by the copper-clad insulating substrate, the copper-clad insulating substrate may include an upper copper clad layer, a lower copper clad layer 23 and an insulating layer 22 disposed between the upper copper clad layer and the lower copper clad layer, the insulating layer 22 has good insulating performance, and the power semiconductor module can be effectively prevented from generating a leakage condition; the copper-clad insulating substrate has good heat conducting performance and higher temperature cycle resistance and temperature impact resistance, so that the reliability of the power semiconductor module is effectively improved. The conductive layer 21 may be an upper copper layer covered by a copper-clad insulating substrate to achieve the conductive function. The copper-clad insulating substrate may be a copper-clad resin substrate or a copper-clad ceramic substrate, and the type of the copper-clad insulating substrate is not limited in the present disclosure.
The metal connecting belt 3 may be an aluminum belt or a copper belt, and has good conductivity and low cost, but the disclosure does not limit the specific material used for the metal connecting belt 3.
The present disclosure also provides a motor assembly including the power semiconductor module
The present disclosure also provides an electric vehicle including the motor assembly.
The preferred embodiments of the present disclosure are described in detail with reference to the accompanying drawings, however, the present disclosure is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present disclosure within the technical idea of the present disclosure, and these simple modifications all belong to the protection scope of the present disclosure.
It should be noted that, in the foregoing embodiments, various features described in the above embodiments may be combined in any suitable manner, and in order to avoid unnecessary repetition, various combinations that are possible in the present disclosure are not described again.
In addition, any combination of various embodiments of the present disclosure may be made, and the same should be considered as the disclosure of the present disclosure, as long as it does not depart from the spirit of the present disclosure.
Claims (11)
1. A power semiconductor module, characterized in that, power semiconductor module includes a plurality of power semiconductor chips (1), heat dissipation base plate (2) and metallic interconnect area (3) that have conducting layer (21), power semiconductor chip (1) sets up heat dissipation base plate (2) on conducting layer (21), metallic interconnect area (3) are connected power semiconductor chip (1) with between conducting layer (21), and/or connect two between power semiconductor chip (1).
2. The power semiconductor module according to claim 1, further comprising a power terminal (4), wherein the conductive layer (21) comprises a first conductive layer (211), a second conductive layer (212) and a third conductive layer (213) which are arranged at intervals, the power semiconductor chip (1) is configured with a first chip set (11) and a second chip set (12), the power terminal (4) comprises an anode terminal (41), a cathode terminal (42) and an AC terminal (43), the first conductive layer (211) is provided with the first chip set (11) and the anode terminal (41), the third conductive layer (213) is provided with the second chip set (12) and the AC terminal (43), the second conductive layer (212) is provided with the cathode terminal (42), and the first chip set (11) is connected with the third conductive layer (213) through the metal connecting strip (3), the second chip group (12) is connected with the second conducting layer (212) through the metal connecting belt (3).
3. The power semiconductor module according to claim 1, characterized in that the power semiconductor module further comprises a control terminal (5), the control terminal (5) comprises a D-pole terminal (51), an S-pole terminal (52) and a G-pole terminal (53), the D-pole terminal (51) is connected to the lower surface of the power semiconductor chip (1), the S-pole terminal (52) is connected to the S-pole of the upper surface of the power semiconductor chip (1); the G pole terminal (53) is connected with the G pole on the upper surface of the power semiconductor chip (1).
4. A power semiconductor module according to claim 3, characterized in that the power semiconductor module further comprises a bonding wire (6), the S-pole terminal (52) and the G-pole terminal (53) are connected to the upper surface of the power semiconductor chip (1) through the bonding wire (6), and the D-pole terminal (51) is connected to the lower surface of the power semiconductor chip (1) through the conductive layer (21).
5. The power semiconductor module according to claim 2, characterized in that the first chip group (11) and the second chip group (12) each employ a combination of an IGBT chip and an SiC chip.
6. A power semiconductor module according to claim 1, characterized in that the power semiconductor module further comprises a plastic encapsulation body (7), the plastic encapsulation body (7) being used for molding the module.
7. The power semiconductor module according to any of claims 2 to 5, characterized in that the power semiconductor chip (1) and the terminals are fixed to the conductive layer (21) by means of soldering, sintering or adhesive connections.
8. The power semiconductor module according to any one of claims 1 to 6, wherein the heat-dissipating substrate (2) is a copper-clad insulating substrate, and the conductive layer (21) is a copper skin layer covered with the copper-clad insulating substrate.
9. The power semiconductor module according to any of claims 1-6, characterized in that the metallic connection strip (3) is an aluminum or copper strip.
10. An electric machine assembly, characterized in that it comprises a power semiconductor module according to any one of claims 1-9.
11. An electric vehicle comprising the electric machine assembly of claim 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921184385.6U CN210778570U (en) | 2019-07-25 | 2019-07-25 | Power semiconductor module, motor assembly and electric vehicle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921184385.6U CN210778570U (en) | 2019-07-25 | 2019-07-25 | Power semiconductor module, motor assembly and electric vehicle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210778570U true CN210778570U (en) | 2020-06-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921184385.6U Active CN210778570U (en) | 2019-07-25 | 2019-07-25 | Power semiconductor module, motor assembly and electric vehicle |
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| Country | Link |
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| CN (1) | CN210778570U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024045990A1 (en) * | 2022-08-31 | 2024-03-07 | 比亚迪半导体股份有限公司 | Semiconductor power module, motor controller, and vehicle |
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2019
- 2019-07-25 CN CN201921184385.6U patent/CN210778570U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024045990A1 (en) * | 2022-08-31 | 2024-03-07 | 比亚迪半导体股份有限公司 | Semiconductor power module, motor controller, and vehicle |
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| TR01 | Transfer of patent right |
Effective date of registration: 20210218 Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 516000 Xiangshui River, Daya Bay, Huizhou City, Guangdong Province Patentee before: HUIZHOU BYD INDUSTRIAL Co.,Ltd. |
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| TR01 | Transfer of patent right |