CN218996706U - Copper strip bonding type power module packaging structure for epoxy plastic package vehicle - Google Patents
Copper strip bonding type power module packaging structure for epoxy plastic package vehicle Download PDFInfo
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- CN218996706U CN218996706U CN202222939283.9U CN202222939283U CN218996706U CN 218996706 U CN218996706 U CN 218996706U CN 202222939283 U CN202222939283 U CN 202222939283U CN 218996706 U CN218996706 U CN 218996706U
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- nitride insulating
- insulating ceramic
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Abstract
The utility model provides a copper strip bonding type power module package for an epoxy plastic package vehicle, which relates to the technical field of electronics and electricity and comprises the following components: a plurality of epoxy half-bridge modules are connected to the radiating copper substrate; each epoxy half bridge module includes: the circuit etching area is arranged on the upper surface of the silicon nitride insulating ceramic substrate, and the lower surface of the silicon nitride insulating ceramic substrate is connected with the heat dissipation copper substrate; the two ends of the silicon nitride insulating ceramic substrate are respectively connected with a lead frame; a plurality of silicon carbide chips, each silicon carbide chip being disposed in the circuit etching region; one end and the middle section of each copper strip are correspondingly connected to each silicon carbide chip respectively, and the other end of each copper strip is bonded on the surface of the silicon nitride insulating ceramic substrate; the epoxy plastic package shell, the silicon nitride insulating ceramic substrate is contained in the epoxy plastic package shell cover. Compared with an aluminum wire, the copper strip has the advantages that lower on-resistance can be obtained, the heat conduction capacity of the module is improved, and the power loss is reduced.
Description
Technical Field
The utility model relates to the technical field of power electronics, in particular to a copper strip bonded power module packaging structure for an epoxy plastic package vehicle.
Background
A semiconductor refers to a material having conductivity between that of a conductor and an insulator at normal temperature. Semiconductors are commonly used in integrated circuits, communication systems, power devices, and the like. With the development of communication systems, the requirements for power devices with larger power, higher frequency and larger breakdown voltage are increasing, and the development of semiconductors of the third generation stands on the tuyere, and the field of integrated circuits is further required to develop wide bandgap semiconductors such as gallium nitride (GaN) and silicon carbide (SiC).
In the traditional semiconductor packaging technology, the interconnection material of the chip and the packaging pins is aluminum wires, and as the thermal expansion coefficient of the aluminum wires is larger than that of the semiconductor, the chip can undergo larger power circulation in the switching process along with the increase of junction temperature, so that the bonding reliability is greatly reduced; at the same time, aluminum wire bonding also creates significant parasitic parameters for high frequency applications. In the traditional welding process, soldering is generally adopted as a connecting layer of an aluminum wire, a chip and a pin, but the soldering connecting layer has low melting point, low electric conductivity, low heat conductivity and thick connecting layer, and can not meet the requirements of the semiconductor chip on high temperature, high heat conductivity and low heat resistance during working.
Disclosure of Invention
Aiming at the problems in the prior art, the utility model provides a copper strip bonded power module packaging structure for an epoxy plastic package vehicle, which comprises the following components:
the heat dissipation copper base plate, be connected with a plurality of epoxy half bridge module on the heat dissipation copper base plate, each epoxy half bridge module includes:
the upper surface of the silicon nitride insulating ceramic substrate is provided with a circuit etching area, and the lower surface of the silicon nitride insulating ceramic substrate is connected with the heat dissipation copper substrate;
lead frames welded at two ends of the silicon nitride insulating ceramic substrate;
and each silicon carbide chip is arranged in the circuit etching area and is connected with the silicon nitride insulating ceramic substrate by adopting a copper strip bonding mode.
Preferably, each epoxy half-bridge module further comprises an epoxy plastic package shell, and the epoxy plastic package shell wraps the silicon nitride insulating ceramic substrate after being formed through epoxy plastic package injection molding.
Preferably, the silicon nitride insulating ceramic substrate includes:
and the upper surface and the lower surface of the Si3N4 ceramic material layer are respectively provided with an oxygen-free copper layer.
Preferably, the lead frame is made of oxygen-free copper.
Preferably, each of the epoxy half-bridge modules further includes:
and one end and the middle section of each copper strip are correspondingly connected with each silicon carbide chip respectively, and the other end of each copper strip is connected with the surface of the silicon nitride insulating ceramic substrate so as to realize the connection of each silicon carbide chip with the silicon nitride insulating ceramic substrate in a copper strip bonding mode.
Preferably, the copper strips are uniformly distributed side by side.
Preferably, at least two chip bonding points are arranged on each silicon carbide chip, and a plurality of copper strip bonding points are respectively arranged on the middle section and two ends of each copper strip;
the copper strips and the silicon carbide chips are correspondingly bonded with the chip bonding points through the copper strip bonding points at one end and the middle section of the copper strips so as to realize connection;
and bonding the copper strips and the surface of the silicon nitride insulating ceramic substrate through copper strip bonding points at the other end of the copper strips to the surface of the silicon nitride insulating ceramic substrate to realize connection.
Preferably, the gates of the silicon carbide chips are electrically connected with the gates of the silicon nitride insulating ceramic substrate and the gates of the same silicon nitride insulating ceramic substrate through aluminum wires.
Preferably, the silicon carbide chip includes: MOSFET chip, or silicon-based IGBT chip, or SiC chip, or GaN chip.
Preferably, each copper strip bonding point is square, rectangular or irregular, and the height of the copper strip bonding point is: the bonding size of each copper strip ranges from 500 μm to 500 μm and 1500 μm to 500 μm.
The technical scheme has the following advantages or beneficial effects:
1) Each copper strip is connected with the surfaces of the silicon carbide chip and the silicon nitride insulating ceramic substrate through a bonding process, so that the maximum fusing current of chip packaging can be effectively improved;
2) The copper strip is used as a lead for connection, has larger through-current capacity, and has strong stress resistance and strong power cycle resistance;
3) Compared with an aluminum wire, the contact area of the copper strip, the DBC and the chip is increased, so that the thermal resistance and the temperature rise of the power device can be greatly reduced, the lower on-resistance can be obtained, the heat conduction capacity of the module is improved, and the power loss is reduced.
Drawings
Fig. 1 is a schematic structural diagram of a copper-tape-bonded power module package structure for an epoxy plastic package vehicle according to a preferred embodiment of the present utility model;
FIG. 2 is an enlarged view of a portion of FIG. 1;
fig. 3 is a schematic diagram of the epoxy half-bridge module in a preferred embodiment of the utility model.
Detailed Description
The utility model will now be described in detail with reference to the drawings and specific examples. The present utility model is not limited to the embodiment, and other embodiments may fall within the scope of the present utility model as long as they conform to the gist of the present utility model.
In a preferred embodiment of the present utility model, based on the above-mentioned problems existing in the prior art, a copper tape bonded power module package structure for an epoxy plastic package vehicle is now provided, as shown in fig. 1 and 3, comprising: the heat dissipation copper base plate 1 is connected with a plurality of epoxy half-bridge modules 2 on the heat dissipation copper base plate 1, and each epoxy half-bridge module 2 includes:
a silicon nitride insulating ceramic substrate 21, wherein a circuit etching area is arranged on the upper surface of the silicon nitride insulating ceramic substrate 21, and the lower surface of the silicon nitride insulating ceramic substrate 21 is connected with a heat dissipation copper substrate 1;
and a plurality of silicon carbide chips 23, wherein each silicon carbide chip 23 is arranged in the circuit etching area and is connected with the silicon nitride insulating ceramic substrate 21 by adopting a copper strip bonding mode.
In the preferred embodiment of the present utility model, each epoxy half-bridge module 2 further includes an epoxy plastic package 24, and the epoxy plastic package 24 is formed by epoxy plastic molding and then wraps the silicon nitride insulating ceramic substrate 21.
Specifically, in this embodiment, the epoxy half-bridge module 2 is injection molded to form an epoxy plastic package 24 by an epoxy plastic package process, and the silicon nitride insulating ceramic substrate 21, the lead frame 22, the silicon carbide chip 23 and the copper tape are wrapped in the epoxy plastic package 24.
In a preferred embodiment of the present utility model, the silicon nitride insulating ceramic substrate 21 includes:
and an oxygen-free copper layer is formed on the upper surface and the lower surface of the Si3N4 ceramic material layer respectively.
Specifically, in this embodiment, the silicon nitride insulating ceramic substrate 21 is preferably a silicon nitride AMB ceramic substrate, the upper and lower layers of the silicon nitride insulating ceramic substrate 21 are respectively formed with an oxygen-free copper layer structure, the middle layer is made of a Si3N4 ceramic material layer with high heat conductivity and high reliability, and the copper layer structures of the upper and lower layers are sintered on the middle layer through a silver sintering process, so as to meet the requirements of high heat conductivity and high reliability.
In the preferred embodiment of the present utility model, lead frame 22 is fabricated from oxygen free copper.
Specifically, in the present embodiment, the lead frame 22 is preferably made of oxygen-free copper that meets the requirements of the soldering and wire bonding process;
after the epoxy plastic packaging, the lead frame 22 needs to be cut into ribs for molding, so that the power terminal part exposed out of the epoxy plastic packaging material and the signal terminal part are disconnected, and the power circuit and the signal circuit at the application end of the module are conveniently connected.
In a preferred embodiment of the present utility model, as shown in fig. 2, each epoxy half-bridge module 2 further includes:
and one end and the middle section of each copper strip 25 are respectively and correspondingly connected with each silicon carbide chip 23, and the other end of each copper strip 25 is connected with the surface of the silicon nitride insulating ceramic substrate 21 so as to realize that each silicon carbide chip 23 is connected with the silicon nitride insulating ceramic substrate 25 in a copper strip bonding mode.
Specifically, in this embodiment, the silicon carbide chips 23 and the silicon nitride insulating ceramic substrate 21 are connected by copper tape bonding, so that parasitic parameters caused by the linear structure of the conventional aluminum wire or copper wire can be effectively reduced, the thermal conductivity and the resistivity are improved, the reliability is improved, and the warping and pollution problems of the silicon nitride insulating ceramic substrate 21 can be effectively reduced; the pressure and ultrasonic energy of copper ribbon 25 when bonded acts on a larger area than copper ribbon bonding, reducing the pressure experienced by silicon carbide chip 23 per unit area and thus reducing the likelihood of chip damage.
In the preferred embodiment of the present utility model, copper strips 25 are uniformly distributed side by side as shown in fig. 1.
Specifically, in this embodiment, the copper strips 25 are uniformly distributed side by side, and when the copper strips 25 are bonded, the pressure and ultrasonic energy act on a larger area, so that the pressure applied to the unit area of the silicon carbide chip is reduced, and the possibility of chip damage is also reduced.
In the preferred embodiment of the present utility model, at least two die bonding points are provided on each silicon carbide die 23, and a plurality of copper tape bonding points are provided on the middle section and both ends of each copper tape 25;
the copper strips 25 and the silicon carbide chips 23 are correspondingly bonded with the chip bonding points through the copper strip bonding points at one end and the middle section of the copper strips 25 to realize connection;
the copper strips 25 and the surface of the silicon nitride insulating ceramic substrate 21 are bonded to each other through copper strip bonding points at the other ends of the copper strips 25 to the surface of the silicon nitride insulating ceramic substrate 21 to achieve connection.
Specifically, in this embodiment, each copper strip 25 and each silicon carbide chip 23 are bonded with a plurality of bonding points of the chip correspondingly through a plurality of bonding points of the copper strips, and each copper strip 25 and the surface of the silicon nitride insulating ceramic substrate 21 are bonded with the surface of the silicon nitride insulating ceramic substrate 21 through a plurality of bonding points of the copper strips, so that the connection is realized, when the bonding is performed, pressure and ultrasonic energy act on a larger area, the pressure applied to the unit area of the silicon carbide chip 23 is reduced, and the possibility of chip damage is also reduced.
In the preferred embodiment of the present utility model, the gates of the silicon carbide chips 23 are electrically connected to the gates of the silicon nitride insulating ceramic substrate 21 and the gates of the same silicon nitride insulating ceramic substrate 21 by aluminum wires.
Specifically, in this embodiment, the gates of the silicon carbide chips 23 and the gates of the silicon nitride insulating ceramic substrates 21 and the gates of the same silicon nitride insulating ceramic substrates 21 are all connected by aluminum wires, so that on one hand, electrical interconnection between the silicon carbide chips 23 and the silicon nitride insulating ceramic substrates 21 is realized, and on the other hand, conductivity and reliability are further enhanced.
In a preferred embodiment of the present utility model, the silicon carbide chip 23 includes: MOSFET chip, or silicon-based IGBT chip, or SiC chip, or GaN chip.
In a preferred embodiment of the present utility model, each copper strip bonding point is square, rectangular, or irregular in shape, and the copper strip bonding point height is: the bonding size of each copper strip ranges from 500 μm to 500 μm and 1500 μm to 500 μm.
The foregoing is merely illustrative of the preferred embodiments of the present utility model and is not intended to limit the embodiments and scope of the present utility model, and it should be appreciated by those skilled in the art that equivalent substitutions and obvious variations may be made using the description and illustrations herein, which should be included in the scope of the present utility model.
Claims (10)
1. The utility model provides a copper strips bonding's power module packaging structure for epoxy plastic envelope car which characterized in that includes: the heat dissipation copper base plate, be connected with a plurality of epoxy half bridge module on the heat dissipation copper base plate, each epoxy half bridge module includes:
the upper surface of the silicon nitride insulating ceramic substrate is provided with a circuit etching area, and the lower surface of the silicon nitride insulating ceramic substrate is connected with the heat dissipation copper substrate;
lead frames welded at two ends of the silicon nitride insulating ceramic substrate;
and each silicon carbide chip is arranged in the circuit etching area and is connected with the silicon nitride insulating ceramic substrate by adopting a copper strip bonding mode.
2. The power module package structure for an epoxy plastic package vehicle according to claim 1, wherein each of the epoxy half-bridge modules further comprises an epoxy plastic package case, and the epoxy plastic package case is formed by epoxy plastic package injection molding and then wraps the silicon nitride insulating ceramic substrate.
3. The power module package structure for an epoxy plastic package vehicle of claim 1, wherein the silicon nitride insulating ceramic substrate comprises:
and the upper surface and the lower surface of the Si3N4 ceramic material layer are respectively provided with an oxygen-free copper layer.
4. The power module packaging structure for an epoxy plastic package vehicle according to claim 1, wherein the lead frame is made of oxygen-free copper.
5. The power module package structure for an epoxy plastic package vehicle of claim 1, wherein each of the epoxy half-bridge modules further comprises:
and one end and the middle section of each copper strip are correspondingly connected with each silicon carbide chip respectively, and the other end of each copper strip is connected with the surface of the silicon nitride insulating ceramic substrate so as to realize the connection of each silicon carbide chip with the silicon nitride insulating ceramic substrate in a copper strip bonding mode.
6. The power module package structure for an epoxy plastic package of claim 5, wherein the copper strips are uniformly distributed side by side.
7. The power module packaging structure for the epoxy plastic package vehicle according to claim 5, wherein at least two chip bonding points are arranged on each silicon carbide chip, and a plurality of copper strip bonding points are respectively arranged on the middle section and two ends of each copper strip;
the copper strips and the silicon carbide chips are correspondingly bonded with the chip bonding points through the copper strip bonding points at one end and the middle section of the copper strips so as to realize connection;
and bonding the copper strips and the surface of the silicon nitride insulating ceramic substrate through copper strip bonding points at the other end of the copper strips to the surface of the silicon nitride insulating ceramic substrate to realize connection.
8. The power module package structure for an epoxy plastic package of claim 1, wherein the gates of the silicon carbide chips are electrically connected to the gates of the silicon nitride insulating ceramic substrate and the gates of the same silicon nitride insulating ceramic substrate by aluminum wires.
9. The power module package structure for an epoxy plastic package vehicle of claim 1, wherein the silicon carbide chip comprises: MOSFET chip, or silicon-based IGBT chip, or SiC chip, or GaN chip.
10. The power module package structure for an epoxy plastic package of claim 7, wherein each copper strip bonding point is square or rectangular in shape, and the copper strip bonding point has a height of: the bonding size of each copper strip ranges from 500 μm to 500 μm and 1500 μm to 500 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222939283.9U CN218996706U (en) | 2022-11-04 | 2022-11-04 | Copper strip bonding type power module packaging structure for epoxy plastic package vehicle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222939283.9U CN218996706U (en) | 2022-11-04 | 2022-11-04 | Copper strip bonding type power module packaging structure for epoxy plastic package vehicle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218996706U true CN218996706U (en) | 2023-05-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222939283.9U Active CN218996706U (en) | 2022-11-04 | 2022-11-04 | Copper strip bonding type power module packaging structure for epoxy plastic package vehicle |
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| CN (1) | CN218996706U (en) |
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- 2022-11-04 CN CN202222939283.9U patent/CN218996706U/en active Active
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