CN217822755U - Adopt two-sided heat dissipation module's of graphite copper cushion packaging structure and electric automobile - Google Patents

Abstract

The utility model discloses an adopt two-sided heat dissipation module's of graphite copper cushion packaging structure and electric automobile. The packaging structure comprises a bottom DBC lining plate, a power chip, a driving resistor, a cushion block and a top DBC lining plate, wherein the power chip, the driving resistor, the cushion block and the top DBC lining plate are attached to the bottom DBC lining plate. The power chip, the driving resistor and the cushion block are all arranged between the top layer DBC lining plate and the bottom layer DBC lining plate, so that the packaging structure has a sandwich structure. The cushion is made of graphite copper, and the packaging structure comprises a first radiator and a second radiator, and the first radiator and the second radiator are respectively assembled on the outer sides of the bottom layer DBC lining plate and the top layer DBC lining plate.

Description

Packaging structure of double-sided heat dissipation module adopting graphite copper cushion block and electric automobile

Technical Field

The utility model relates to a power semiconductor module's integrated technical field of encapsulation particularly, relates to the packaging structure of the two-sided heat dissipation module who adopts graphite copper cushion and electric automobile including this packaging structure.

Background

Modern power electronics are moving towards high power density and high efficiency. With the development of electric vehicles, the design of motor controllers for vehicles becomes particularly important. In order to meet customer demand and the increasing power level requirements of large vehicles, industry has been devoted to increasing the power density of power modules. However, an increase in power density increases the operating temperature, which may threaten the reliability of the power module. In addition, the operating temperature of the wide bandgap semiconductor device is greatly increased compared with the operating temperature of the conventional silicon-based semiconductor device.

In order to further improve the power density and reliability of the motor driver for the vehicle, the application of the double-sided heat dissipation module to the electric vehicle is receiving more and more attention. Compared with the traditional single-side radiating module, the double-side radiating module has stronger radiating capacity and lower parasitic parameters; in order to ensure high performance and reliability of the double-sided heat dissipation module, reducing thermal resistance and thermal stress are two important goals in designing the double-sided heat dissipation module. The spacer is a unique component in the double-sided heat dissipation module, and is mainly used for connecting the power semiconductor chip and the top liner plate thereof to realize the electrical connection and heat transfer therebetween, thereby playing an important role in the heat dissipation path of the double-sided heat dissipation module. Therefore, the heat-conducting property of the cushion block directly concerns the heat-dissipating capacity of the whole double-sided heat-dissipating module. In the state of the art, a spacer made of copper-molybdenum alloy is generally used, however, this type of spacer still has high thermal resistance, so that the heat dissipation capability of the double-sided heat dissipation module is limited to some extent.

Therefore, there is still a need in the art to improve the package structure of the conventional dual-sided heat dissipation module, so as to further reduce the thermal resistance of the dual-sided heat dissipation module and improve the reliability of the module.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a can overcome the double-sided thermal module's of above-mentioned shortcoming packaging structure and electric automobile including this packaging structure, it can further reduce the thermal resistance to promote the reliability of whole module.

Furthermore, the present invention also aims to solve or alleviate other technical problems existing in the prior art.

The utility model discloses an adopt the two-sided thermal module's of graphite copper cushion packaging structure and the electric automobile including this packaging structure to solve above-mentioned problem.

According to the utility model discloses an aspect provides an adopt packaging structure of two-sided heat dissipation module of graphite copper cushion, it include bottom DBC welt, paste adorn in power chip and drive resistance, cushion and top layer DBC welt on the bottom DBC welt, wherein, power chip drive resistance with the cushion all set up in top layer DBC welt with between the bottom DBC welt, make packaging structure has sandwich structure, its characterized in that, the cushion is made by graphite copper, and packaging structure still includes first radiator and second radiator, first radiator with the second radiator assemble respectively in bottom DBC welt with on the outside of top layer DBC welt.

Optionally, according to an embodiment of the present invention, the power chip includes a plurality of upper bridge arm power chips and a plurality of lower bridge arm power chips forming a half bridge circuit, wherein the plurality of upper bridge arm power chips are connected in parallel with each other, and the plurality of lower bridge arm power chips are connected in parallel with each other; the driving resistors comprise a plurality of upper bridge arm driving resistors and a plurality of lower bridge arm driving resistors; the plurality of upper bridge arm power chips and the plurality of upper bridge arm driving resistors form an upper bridge arm of the half-bridge circuit, and the plurality of lower bridge arm power chips and the plurality of lower bridge arm driving resistors form a lower bridge arm of the half-bridge circuit.

Optionally, according to an embodiment of the present invention, the pad includes a plurality of upper bridge arm pads, a plurality of lower bridge arm pads and an AC pad for electrically connecting the upper bridge arm and the lower bridge arm of the half-bridge circuit, wherein the plurality of upper bridge arm pads and the plurality of lower bridge arm pads are respectively connected to the plurality of upper bridge arm power chips and the plurality of lower bridge arm power chips.

Optionally, according to an embodiment of the present invention, the package structure further includes a plurality of terminals including a power terminal, a driving terminal and a protection terminal, wherein the power terminal includes a power DC + terminal, a power DC-terminal and a power AC terminal, and the driving terminal includes an upper bridge arm source driving terminal, an upper bridge arm gate driving terminal, a lower bridge arm source driving terminal and a lower bridge arm gate driving terminal.

Optionally, according to an embodiment of the present invention, the power DC + terminal and the power DC-terminal constitute a laminated busbar structure and are arranged at one end of the encapsulation structure, while the power AC terminal is arranged at the opposite end of the encapsulation structure.

Optionally, according to an embodiment of the present invention, the plurality of terminals are symmetrically arranged with respect to the power chips such that a physical length from the plurality of terminals to each power chip is equal.

Optionally, in accordance with an embodiment of the present invention, the power chip includes a source, a gate and a drain, and the bottom DBC liner includes a plurality of copper blocks, wherein the source of the upper leg power chip is connected to a corresponding copper block by an upper leg source bond wire, the gate of the upper leg power chip is connected to a corresponding copper block by an upper leg gate bond wire and then to an upper leg drive resistor, and the drain of the upper leg power chip is connected to a corresponding copper block and then to the power DC + terminal; and wherein the sources of the lower leg power chips are connected to respective copper blocks by lower leg source bond wires, the gates of the lower leg power chips are connected to respective copper blocks by lower leg gate bond wires and then to lower leg drive resistors, and the drains of the lower leg power chips are connected to respective copper blocks and then to the AC pads.

Optionally, according to an embodiment of the invention, the top layer DBC patch comprises a plurality of copper blocks, wherein the upper surfaces of the upper leg blocks and the AC blocks are connected to respective copper blocks and then to the power AC terminals, and the upper surfaces of the lower leg blocks are connected to respective copper blocks and then to the power DC-terminals.

Optionally, according to an embodiment of the present invention, the power chip, the upper bridge arm source driving terminal, the upper bridge arm gate driving terminal and the power DC + terminal are welded to the bottom DBC liner plate by nano silver solder; and the pad, the power AC terminal, the power DC-terminal, the lower bridge arm source electrode driving terminal and the lower bridge arm gate electrode driving terminal are welded to the top layer DBC liner plate through nano silver solder.

Optionally, according to an embodiment of the present invention, the bottom DBC liner and the top DBC liner each include a first conductive layer, a second conductive layer and an insulating layer disposed between the first conductive layer and the second conductive layer, wherein the first conductive layer is printed with a circuit pattern.

Optionally, according to an embodiment of the present invention, the first conductive layer and the second conductive layer are made of copper, and the insulating layer is made of alumina, aluminum nitride, or silicon nitride ceramic.

According to the utility model discloses a second aspect provides an electric automobile, a serial communication port, electric automobile includes the basis the utility model discloses a first aspect two-sided heat dissipation module's packaging structure.

Compared with the prior art, the utility model provides an adopt two-sided thermal module's of graphite copper cushion packaging structure and electric automobile including this packaging structure has following beneficial effect: the graphite copper material forming the cushion block has high heat conductivity coefficient and excellent heat conductivity, so that the thermal resistance of the double-sided heat dissipation module is further reduced, and the heat dissipation capacity and reliability of the whole module are greatly improved; meanwhile, the top layer lining plate and the bottom layer lining plate of the packaging structure are both directly connected with the radiator, so that double-sided heat dissipation is effectively realized, and compared with a traditional single-sided heat dissipation module, the thermal resistance is greatly reduced.

The details of one or more embodiments of the invention are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the invention will be apparent from the description and drawings, and from the claims.

Drawings

The invention may be more particularly described by way of example with reference to the accompanying drawings, which are not drawn to scale, and in which:

fig. 1 is a perspective view of an external structure of a package structure of a double-sided heat dissipation module according to an embodiment of the present invention;

fig. 2 is a perspective view of the internal structure of the package structure of the double-sided heat dissipation module according to an embodiment of the present invention, wherein the top layer DBC liner is removed for clarity;

fig. 3 is a top view of the internal structure of the package structure of the double-sided heat dissipation module according to an embodiment of the present invention, wherein the top layer DBC liner is removed for clarity;

fig. 4 is a schematic diagram showing a comparison between the chip junction temperature distribution of the package structure of the double-sided heat dissipation module using the graphite copper pad and the chip junction temperature distribution of the same package structure using the copper molybdenum alloy pad according to an embodiment of the present invention;

fig. 5 is a schematic diagram of a bottom DBC liner of a package structure of a double-sided heat dissipation module according to an embodiment of the present invention;

fig. 6 is a schematic diagram of a top layer DBC liner of a package structure of a double-sided heat dissipation module according to an embodiment of the present invention;

fig. 7 is a schematic diagram of a half-bridge circuit corresponding to a package structure of a double-sided heat dissipation module according to an embodiment of the invention; and

fig. 8 is a schematic flowchart of a packaging method of a double-sided heat dissipation module according to an embodiment of the present invention.

The same reference numbers are used throughout the drawings to refer to the same elements or structures.

Parts list

1. Upper bridge arm grid driving terminal

2. Upper bridge arm source electrode driving terminal

3. Power AC terminal

4. First overcurrent protection terminal

5. Lower bridge arm grid driving terminal

6. Lower bridge arm source electrode driving terminal

7. Top layer DBC lining board

8. Bottom layer DBC lining board

9. Power DC + terminal

10. Power DC terminal

11. Second overcurrent protection terminal

12. Upper bridge arm cushion block

13 AC cushion block

14. Lower bridge arm cushion block

15. Lower bridge arm source electrode bonding wire

16. Upper bridge arm source electrode bonding wire

17. Upper bridge arm grid bonding wire

18. Upper bridge arm driving resistor

19. Lower bridge arm driving resistor

20. Lower bridge arm grid bonding wire

21. Lower bridge arm switch tube

22. Upper bridge arm switch tube

23. First copper block

24. Second copper block

25. Third copper block

26 DC + copper block

27. Fourth copper block

28. Fifth copper block

29. Sixth copper block

30 AC2 copper block

31 AC1 copper block

32 DC-copper block

33. Seventh copper block

34. Eighth copper block

100. Packaging structure

200. Packaging method

S201 first step

S202 the second step

S203 third step

S204 fourth step

S205 fifth step

S206 sixth step.

Detailed Description

It is easily understood that, according to the technical solution of the present invention, a plurality of alternative structural modes and implementation modes can be proposed by those skilled in the art without changing the spirit of the present invention. Therefore, the following detailed description and the accompanying drawings are merely illustrative of the technical solutions of the present invention, and should not be considered as limiting or restricting the technical solutions of the present invention in their entirety or in any other way.

The terms of orientation of up, down, left, right, front, back, top, bottom, and the like referred to or may be referred to in this specification are defined relative to the configuration shown in the drawings, and are relative terms, and thus may be changed correspondingly according to the position and the use state of the device. Therefore, these and other directional terms should not be construed as limiting terms. Furthermore, the terms "first," "second," "third," and the like, are used for descriptive and distinguishing purposes only and are not to be construed as indicating or implying relative importance of the respective components.

Referring first to fig. 1, an external structure perspective view of a package structure 100 of a double-sided heat dissipation module according to an embodiment of the present invention is shown. As shown in fig. 1, the package structure 100 includes a top DBC substrate 7 and a bottom DBC substrate 8 arranged in parallel, spaced apart from each other by a distance such that a gap is formed therebetween for accommodating various components such as a power chip, a driving resistor, and a pad.

The package structure 100 further includes a plurality of terminals extending outward from both ends thereof, including power terminals, driving terminals, and protection terminals. In the embodiment shown in fig. 1, the power terminals of the package structure 100 include a power AC terminal 3, a power DC + terminal 9, and a power DC-terminal 10, all of which are in a plate-like configuration. As shown in fig. 1, the power AC terminal 3 is arranged at one end of the package structure 100, and the power DC + terminal 9 and the power DC-terminal 10 are arranged at the opposite other end of the package structure 100. In the preferred embodiment of the present invention, the power DC + terminal 9 and the power DC-terminal 10 constitute a laminated busbar structure, so that the distance between the two terminals is very small, and the two terminals are covered with a polyimide film for insulation, thereby greatly reducing the parasitic inductance of the package structure 100.

In the embodiment shown in fig. 1, the driving terminals of the package structure 100 include an upper arm gate driving terminal 1, an upper arm source driving terminal 2, a lower arm gate driving terminal 5, and a lower arm source driving terminal 6, which are rod-shaped structures and together constitute a driving circuit terminal of the package structure 100. In addition, in the embodiment shown in fig. 1, the protection terminals of the package structure 100 include the first and second overcurrent protection terminals 4 and 11, each of which has a rod-like configuration similar to the drive terminal. As shown in fig. 1, the four driving terminals and the two protection terminals of the package structure 100 are all arranged at the same end of the package structure 100. In this embodiment, four driving terminals and two overcurrent protection terminals are each arranged at the same end as the power AC terminal 3, wherein the upper arm gate driving terminal 1, the upper arm source driving terminal 2, and the second overcurrent protection terminal 11 are arranged at one side of the power AC terminal 3, and the lower arm gate driving terminal 5, the lower arm source driving terminal 6, and the first overcurrent protection terminal 4 are arranged at the opposite side of the power AC terminal 3. However, it should be understood that power, drive and protection terminals having different shapes, numbers or arrangements may be employed depending on the particular application of the package structure 100.

In this embodiment, the package structure 100 further includes a first heat spreader and a second heat spreader (not shown) that are respectively assembled (e.g., soldered) on the outer sides of the top layer DBC backing 7 and the bottom layer DBC backing 8. The arrangement of the first radiator and the second radiator can provide two vertically parallel radiating paths for the power chip, so that double-sided radiation is effectively realized, and the thermal resistance of the module is greatly reduced.

Turning now to fig. 2 and 3, which respectively illustrate an internal perspective and top view of a package structure 100 of a double-sided thermal module according to an embodiment of the present invention, wherein a top layer DBC liner 7 is removed for clarity. As described above, the package structure 100 includes various components in the gap between the top DBC substrate 7 and the bottom DBC substrate 8, including a power chip having a source, a gate, and a drain, a driving resistor, and pads. The power chip, the driving resistor and the pad are disposed between the top DBC substrate 7 and the bottom DBC substrate 8, so that the package structure 100 has a sandwich structure.

The power chip of the package structure 100 includes an upper bridge arm switch tube 22 and a lower bridge arm switch tube 21 forming a half-bridge circuit, where the upper bridge arm switch tube 22 and the lower bridge arm switch tube 21 both include a plurality of power chips connected in parallel. In the embodiment shown in fig. 2 and 3, each of upper arm switching transistor 22 and lower arm switching transistor 21 includes four silicon carbide MOSFET (metal-oxide semiconductor field effect transistor) power chips connected in parallel with each other. However, it should be understood that upper arm switch 22 and lower arm switch 21 may each include any suitable number of chips connected in parallel with each other, depending on the particular application of package structure 100. The multi-chip parallel structure enhances the through-current capability of the module, improves the applicable power level and is particularly suitable for high-power occasions. As shown in fig. 2 and fig. 3, each power chip is further connected with a driving resistor, which is specifically a gate driving resistor. The driving resistors of the package structure 100 include an upper leg driving resistor 18 and a lower leg driving resistor 19. In package structure 100 of this embodiment, upper arm switching tube 22 and upper arm drive resistor 18 form an upper arm of a half-bridge circuit, and lower arm switching tube 21 and lower arm drive resistor 19 form a lower arm of the half-bridge circuit. In addition, as shown, the upper arm switch tube 22 and the lower arm switch tube 21 are attached to the bottom layer DBC substrate 8, thereby forming a non-flip-chip packaging structure, which facilitates rapid manufacturing.

With further reference to fig. 2 and 3, the pads of package structure 100 include an upper arm pad 12, a lower arm pad 14, and an AC pad 13 for electrically connecting the upper and lower arms of the half-bridge circuit. As shown, upper arm pad 12 and lower arm pad 14 are connected to upper arm switching tube 22 and lower arm switching tube 21, respectively. Specifically, the sources of the upper arm switching tube 22 and the lower arm switching tube 21 are connected to the lower surfaces of the upper arm pad 12 and the lower arm pad 14, respectively, by silver sintering. In order to realize kelvin connection, the sources of the upper arm switch tube 22 and the lower arm switch tube 21 respectively lead out source signals to corresponding copper blocks arranged on the bottom layer DBC lining plate 8 through the corresponding upper arm source bonding wire 16 and the corresponding lower arm source bonding wire 15. Therefore, the driving circuit of the package structure 100 adopts a kelvin structure, which can effectively decouple the driving circuit and the power circuit, thereby avoiding the current variation on the power side from affecting the gate driving circuit, so as to make the driving signal more stable.

In addition, the gates of the upper arm switch tube 22 and the lower arm switch tube 21 are respectively connected to the corresponding copper blocks arranged on the bottom layer DBC substrate 8 through the corresponding upper arm gate bonding wire 17 and lower arm gate bonding wire 20, and are respectively connected to the corresponding upper arm driving resistor 18 and lower arm driving resistor 19. In addition, the drains of the upper arm switching tube 22 and the lower arm switching tube 21 are connected to the respective copper blocks provided on the bottom DBC backing plate 8 by silver sintering, respectively.

In the package structure 100 shown in fig. 2 and 3, the AC pad 13 having an integral structure is disposed between the upper arm and the lower arm of the half-bridge circuit to electrically connect the upper arm switching tube 22 and the lower arm switching tube 21. In addition, the AC block 13 also serves to connect the top DBC substrate 7 and the bottom DBC substrate 8, so as to achieve electrical connection and heat transfer between the top DBC substrate 7 and the bottom DBC substrate 8.

It is noted that the package structure 100 of the double-sided heat dissipation module according to the embodiment of the present invention has a symmetrical structure as a whole. Specifically, the plurality of terminals of the package structure 100 are symmetrically arranged with respect to the power chips mounted on the underlying DBC substrate 8 such that the physical length from the plurality of terminals to each power chip is substantially equal, and thus the parasitic parameters of the parallel branches are also substantially equal. The symmetrical structure is beneficial to improving the dynamic current sharing characteristic of the module, so that good steady-state current sharing is realized.

As mentioned above, the package structure of the double-sided heat dissipation module in the prior art usually adopts a pad made of copper-molybdenum alloy, however, this type of pad has high thermal resistance, which limits the heat dissipation capability of the double-sided heat dissipation module to a certain extent. To overcome the defects of the prior art, the package structure 100 of the present invention employs the pads 12, 13, and 14 made of graphite copper. The graphite copper material has high heat conductivity coefficient and excellent heat conductivity, so that the thermal resistance of the double-sided heat dissipation module can be further reduced, and the reliability of the module is improved. Fig. 4 is a schematic diagram showing a comparison between the chip junction temperature distribution of the package structure 100 of the double-sided heat dissipation module using the graphite copper pad and the chip junction temperature distribution of the same package structure using the copper molybdenum alloy (Mo 50Cu 50) pad according to an embodiment of the present invention. It can be seen from the figure that, under the same working condition, the highest junction temperature of the chip adopting the packaging structure of the copper-molybdenum alloy cushion block is 97.204 ℃, while the highest junction temperature of the chip adopting the packaging structure of the graphite-copper cushion block of the utility model is 94.148 ℃, the junction temperatures of the parallel power chips are all reduced, so that the thermal resistance of the whole power loop is also reduced.

Reference is now made to fig. 5 and 6, which respectively illustrate schematic views of the bottom layer DBC liner 8 and the top layer DBC liner 7 of the package structure 100 of the double-sided heat dissipation module according to an embodiment of the present invention. The bottom DBC liner 8 and the top DBC liner 7 each comprise a first conductive layer, a second conductive layer and an insulating layer (not shown) disposed between the first conductive layer and the second conductive layer, wherein the first conductive layer and the second conductive layer of the bottom DBC liner 8 correspond to an upper layer and a lower layer thereof, respectively, and the first conductive layer and the second conductive layer of the top DBC liner 7 correspond to a lower layer and an upper layer thereof, respectively. In an embodiment of the present invention, the first conductive layer and the second conductive layer are made of copper, preferably oxygen-free copper material, and the surface thereof is subjected to nickel plating treatment, thereby enhancing the oxidation resistance of the surface and facilitating wire bonding. In addition, the insulating layer is made of a ceramic material, preferably an aluminum oxide, aluminum nitride or silicon nitride material, wherein the silicon nitride material has a high yield strength, is not easy to break, and has a thermal expansion coefficient close to that of silicon carbide, so that the reliability is higher.

As shown in fig. 5 and 6, the first conductive layers of the bottom DBC substrate 8 and the top DBC substrate 7 of the package structure 100 each include a plurality of differently shaped copper blocks that respectively constitute specific circuit patterns printed on the two DBC substrates. The connection relationship between the respective power chips, driving resistors, pads, and power and driving terminals of the package structure 100 and the corresponding copper blocks of the bottom DBC substrate 8 and the top DBC substrate 7 will be specifically described below with reference to fig. 1 to 3.

In the embodiment shown in fig. 5, the underlying DBC substrate 8 of the package structure 100 includes eight copper blocks, namely a first copper block 23, a second copper block 24, a third copper block 25, a DC + copper block 26, a fourth copper block 27, a fifth copper block 28, a sixth copper block 29, and an AC2 copper block 30. The first copper block 23 is connected to the upper arm drive resistance 18, and to the upper arm gate drive terminal 1; the second copper block 24 is connected to the upper bridge arm driving resistor 18 and is connected to the grid of the upper bridge arm switching tube 22 through an upper bridge arm grid bonding wire 17; the third copper block 25 is connected to the source of the upper arm switch tube 22 through the upper arm source bonding wire 16 and is connected to the upper arm source driving terminal 2; the DC + copper block 26 is connected to the drain electrode of the upper bridge arm switching tube 22 through silver sintering and is connected to a power DC + terminal 9 of the laminated busbar; the fourth copper block 27 is connected to the source of the lower bridge arm switching tube 21 through the lower bridge arm source bonding wire 15; the fifth copper block 28 is connected to the lower bridge arm driving resistor 19 and is connected to the gate of the lower bridge arm switching tube 21 through a lower bridge arm gate bonding wire 20; the sixth copper block 29 is connected to the lower arm drive resistance 19; an AC2 copper block 30 is attached to the lower surface of the AC block 13 and is connected to the drain of the lower arm switching tube 21 by silver sintering.

In the embodiment shown in fig. 6, the top layer DBC backing 7 of the package structure 100 includes four copper blocks, namely an AC1 copper block 31, a DC-copper block 32, a seventh copper block 33, and an eighth copper block 34. An AC1 copper block 31 is connected to the power AC terminal 3 and to the upper surfaces of the upper arm pad 12 and the AC pad 13 by silver sintering; the DC-copper block 32 is connected to the power DC-terminal 10 of the laminated busbar and is connected to the upper surface of the lower bridge arm cushion block 14 through silver sintering; the seventh copper block 33 is connected to the lower arm source drive terminal 6; the eighth copper block 34 is connected to the lower arm gate drive terminal 5.

In the embodiment of the present invention, the upper bridge arm switch tube 22, the lower bridge arm switch tube 21, the upper bridge arm source electrode driving terminal 2, the upper bridge arm gate electrode driving terminal 1 and the power DC + terminal 9 are welded to the corresponding copper block of the bottom layer DBC lining board 8 by the nano silver solder, and the upper bridge arm cushion block 12, the lower bridge arm cushion block 14, the AC cushion block 13, the power AC terminal 3, the power DC-terminal 10, the lower bridge arm source electrode driving terminal 6 and the lower bridge arm gate electrode driving terminal 5 are welded to the corresponding copper block of the top layer DBC lining board 7 by the nano silver solder. Those skilled in the art will readily recognize that nanosilver solders have lower sintering temperatures and higher operating temperatures, and thus have superior electrical and thermal conductivity.

Referring next to fig. 7, a schematic diagram of a half-bridge circuit corresponding to the package structure 100 of the double-sided heat dissipation module according to an embodiment of the present invention is shown. As shown in the figure, the half-bridge circuit structure is formed by a power DC + terminal 9, a second overcurrent protection terminal 11, an upper arm gate drive terminal 1, an upper arm source drive terminal 2, a first overcurrent protection terminal 4, a power AC terminal 3, a lower arm gate drive terminal 5, a lower arm source drive terminal 6, a power DC-terminal 10, an upper arm switch tube 22, an upper arm drive resistor 18, a lower arm switch tube 21, a lower arm drive resistor 19, and electrical connections therebetween.

Turning now to fig. 8, a flow diagram of a method 200 for packaging a double-sided thermal module according to an embodiment of the present invention is shown. The packaging method 200 may include the steps of:

a first step S201, selecting a DBC lining plate, wherein an insulating layer material of the DBC lining plate is selected to be a silicon nitride material with high yield strength and a thermal expansion coefficient similar to that of silicon carbide, and etching corresponding copper block structures on first conductive layers of a top-layer DBC lining plate 7 and a bottom-layer DBC lining plate 8;

a second step S202, uniformly coating a nano silver material on a corresponding copper block of the bottom DBC lining plate 8 by using a clamp, then placing an upper bridge arm switch tube 22, a lower bridge arm switch tube 21, an upper bridge arm source electrode driving terminal 2, an upper bridge arm grid electrode driving terminal 1 and a power DC + terminal 9 to be welded on the corresponding copper block, and finally heating and sintering by adopting a vacuum reflow soldering method;

a third step S203, connecting the grids and sources of the upper arm switch tube 22 and the lower arm switch tube 21 welded on the bottom layer DBC lining plate 8 with the corresponding copper blocks of the bottom layer DBC lining plate 8 by using a wire bonding method;

a fourth step S204 of uniformly coating a nano silver material on a corresponding copper block of the top DBC lining plate 7 by using a clamp, then placing an upper bridge arm cushion block 12, a lower bridge arm cushion block 14, an AC cushion block 13, a power AC terminal 3, a power DC-terminal 10, a lower bridge arm source electrode driving terminal 6 and a lower bridge arm grid electrode driving terminal 5 to be welded on the corresponding copper block, and finally heating and sintering by adopting a vacuum reflow soldering method;

a fifth step S205 of uniformly coating the upper surfaces of the upper arm switch tube 22 and the lower arm switch tube 21 with a nano silver material, then placing the top layer DBC liner plate 7 on the bottom layer DBC liner plate 8 in parallel, aligning the cushion block welded on the top layer DBC liner plate 7 with the upper arm switch tube 22 and the lower arm switch tube 21 welded on the bottom layer DBC liner plate 8, then fixing them by using a fixture, and finally performing heat sintering by using a vacuum reflow method; and

a sixth step S206, respectively welding the first heat sink and the second heat sink on the outer sides of the top layer DBC backing plate 7 and the bottom layer DBC backing plate 8, and injecting an epoxy resin material between the top layer DBC backing plate 7 and the bottom layer DBC backing plate 8 to form a plastic package structure.

The utility model also provides an electric automobile, it includes according to the utility model discloses an embodiment two-sided heat radiation module's packaging structure 100. In addition, the electric vehicle further includes, but is not limited to, a vehicle-mounted battery, a driving motor, a charging plug, and the like, and the electric energy of the vehicle-mounted battery can be utilized to drive the driving motor to operate so as to provide kinetic energy for the vehicle to run.

It should be understood that all the above preferred embodiments are exemplary and not restrictive, and that various modifications and changes in the specific embodiments described above may be made by those skilled in the art without departing from the spirit of the invention.

Claims (12)

1. A package structure of a double-sided heat dissipation module adopting a graphite copper cushion block comprises a bottom DBC liner plate, a power chip and a driving resistor which are attached to the bottom DBC liner plate, a cushion block and a top DBC liner plate, wherein the power chip, the driving resistor and the cushion block are all arranged between the top DBC liner plate and the bottom DBC liner plate, so that the package structure has a sandwich structure,

the package structure is characterized in that the cushion block is made of graphite copper, the package structure further comprises a first radiator and a second radiator, and the first radiator and the second radiator are respectively assembled on the outer sides of the bottom layer DBC lining plate and the top layer DBC lining plate.

2. The package structure of double-sided heat dissipation module of claim 1,

the power chips comprise a plurality of upper bridge arm power chips and a plurality of lower bridge arm power chips which form a half-bridge circuit, wherein the plurality of upper bridge arm power chips are connected in parallel, and the plurality of lower bridge arm power chips are connected in parallel;

the driving resistors comprise a plurality of upper bridge arm driving resistors and a plurality of lower bridge arm driving resistors;

the plurality of upper bridge arm power chips and the plurality of upper bridge arm driving resistors form an upper bridge arm of the half-bridge circuit, and the plurality of lower bridge arm power chips and the plurality of lower bridge arm driving resistors form a lower bridge arm of the half-bridge circuit.

3. The package structure of the double-sided heat dissipation module of claim 2, wherein the pads comprise a plurality of upper bridge arm pads, a plurality of lower bridge arm pads, and AC pads for electrically connecting the upper bridge arm and the lower bridge arm of the half bridge circuit,

the plurality of upper bridge arm cushion blocks and the plurality of lower bridge arm cushion blocks are respectively connected to the plurality of upper bridge arm power chips and the plurality of lower bridge arm power chips.

4. The package structure of a double-sided heat dissipation module according to claim 3, further comprising a plurality of terminals including power terminals, driving terminals, and protection terminals,

the power terminals comprise power DC + terminals, power DC-terminals and power AC terminals, and the driving terminals comprise upper bridge arm source driving terminals, upper bridge arm grid driving terminals, lower bridge arm source driving terminals and lower bridge arm grid driving terminals.

5. The package structure of the double-sided heat dissipation module according to claim 4, wherein the power DC + terminal and the power DC-terminal constitute a laminated busbar structure and are arranged at one end of the package structure, and the power AC terminal is arranged at the other opposite end of the package structure.

6. The package structure of the double-sided heat dissipation module according to claim 4, wherein the plurality of terminals are symmetrically arranged with respect to the power chips such that a physical length from the plurality of terminals to each power chip is equal.

7. The package structure of the double-sided heat dissipation module of claim 4, wherein the power chip comprises a source, a gate, and a drain, and the underlying DBC liner comprises a plurality of copper blocks,

the source of the upper bridge arm power chip is connected to a corresponding copper block through an upper bridge arm source bonding wire, the gate of the upper bridge arm power chip is connected to the corresponding copper block through an upper bridge arm gate bonding wire and then connected to an upper bridge arm driving resistor, and the drain of the upper bridge arm power chip is connected to the corresponding copper block and then connected to the power DC + terminal; and is provided with

The source of the lower bridge arm power chip is connected to a corresponding copper block through a lower bridge arm source bonding wire, the gate of the lower bridge arm power chip is connected to the corresponding copper block through a lower bridge arm gate bonding wire and then connected to a lower bridge arm driving resistor, and the drain of the lower bridge arm power chip is connected to the corresponding copper block and then connected to the AC pad.

8. The package structure of two-sided heat dissipation module of claim 4, wherein the top DBC backing sheet comprises a plurality of copper blocks,

wherein the upper surfaces of the upper and AC pods are connected to respective copper blocks and in turn to the power AC terminals, and the upper surfaces of the lower pod are connected to respective copper blocks and in turn to the power DC-terminals.

9. The package structure of double-sided heat dissipation module according to claim 4,

the power chip, the upper bridge arm source electrode driving terminal, the upper bridge arm grid electrode driving terminal and the power DC + terminal are welded to the bottom layer DBC lining plate through nano silver solder; and is

The cushion block, the power AC terminal, the power DC-terminal, the lower bridge arm source electrode driving terminal and the lower bridge arm grid electrode driving terminal are welded to the top layer DBC lining plate through nano silver solder.

10. The package structure of the double-sided heat dissipation module according to claim 1, wherein the bottom-layer DBC substrate and the top-layer DBC substrate each include a first conductive layer, a second conductive layer, and an insulating layer disposed between the first conductive layer and the second conductive layer, wherein the first conductive layer is printed with a circuit pattern.

11. The package structure of double-sided heat dissipation module according to claim 10, wherein the first conductive layer and the second conductive layer are made of copper, and the insulating layer is made of alumina, aluminum nitride, or silicon nitride ceramic.

12. An electric vehicle, characterized in that the electric vehicle comprises a package structure of the double-sided heat dissipation module according to any one of claims 1 to 11.

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