CN107195623B - Double-sided heat dissipation high-reliability power module - Google Patents
Double-sided heat dissipation high-reliability power module Download PDFInfo
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- CN107195623B CN107195623B CN201710449886.1A CN201710449886A CN107195623B CN 107195623 B CN107195623 B CN 107195623B CN 201710449886 A CN201710449886 A CN 201710449886A CN 107195623 B CN107195623 B CN 107195623B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a double-sided heat dissipation high-reliability power module which comprises an anode power terminal, a cathode power terminal, an output power terminal, a bottom metal insulation substrate and a top metal insulation substrate, wherein the bottom metal insulation substrate and the top metal insulation substrate are arranged in a laminated mode, an output local metal layer is arranged on the bottom metal insulation substrate or the top metal insulation substrate, the output power terminal is connected with a chip connecting block through the output local metal layer, and the chip connecting block is electrically connected with a chip on the bottom metal insulation substrate and a chip on the top metal insulation substrate. The invention greatly reduces the parasitic inductance of the loop, adopts the material matched with the thermal expansion coefficient of the chip to make interconnection, can reduce the risk of cracking the welding layer and improve the reliability of the power module; the power module has the advantages of reducing the volume of the power module, saving the cost, reducing the weight, being particularly suitable for packaging SiC power chips and fully improving the overcurrent capacity.
Description
Technical Field
The invention relates to a power electronic power module, in particular to a double-sided heat dissipation high-reliability power module.
Background
The power electronic technology plays a very important role in the current rapidly-developed industrial field, and the power electronic power module is used as a representative of the power electronic technology and is widely applied to industries such as electric automobiles, photovoltaic power generation, wind power generation, industrial frequency conversion and the like. With the rise of the industry in China, the power electronic power module has wider market prospect.
The existing power electronic power module has large packaging volume and heavy weight, and does not meet the requirements of high power density and light weight in the fields of electric automobiles, aerospace and the like. The parasitic inductance of the power electronic power module with larger volume is often larger, which causes larger overshoot voltage and increased loss, and also limits the application in high switching frequency occasions. The SiC power electronic device has the characteristics of high frequency, high temperature and high efficiency, but the parasitic inductance of the existing power module is larger, and the exertion of the SiC performance is limited. In addition, with the continuous upgrade of the power density of the application end, the packaging structure of the existing power module has hindered the further improvement of the power density, and a more effective heat dissipation structure must be developed to meet the increasing demand of the power density.
The existing double-sided heat dissipation power module is like CN105161477A, because the single-layer arrangement of the chip is still large in current commutation area, parasitic inductance is often large, the single-layer arrangement of the chip is relatively large in size, in addition, the power terminal and the control terminal are only connected with the first lining plate, the arrangement is not flexible enough, the area of the lining plate cannot be further reduced, and loss is increased due to the fact that the current path is long.
Disclosure of Invention
The invention aims to: aiming at the defects existing in the prior art, the invention aims to provide a double-sided heat dissipation power module with small volume, light weight and small parasitic inductance.
The technical scheme is as follows: the double-sided heat dissipation high-reliability power module comprises an anode power terminal, a cathode power terminal, an output power terminal, a bottom metal insulation substrate and a top metal insulation substrate, wherein the bottom metal insulation substrate and the top metal insulation substrate are arranged in a lamination mode, chips are sintered on the opposite surfaces of the bottom metal insulation substrate and the top metal insulation substrate, the anode power terminal is electrically connected with the chips on the bottom metal insulation substrate, and the cathode power terminal is electrically connected with the chips on the top metal insulation substrate; the bottom metal insulation substrate or the top metal insulation substrate is provided with an output local metal layer, the output power terminal is connected with a chip connecting block through the output local metal layer, and the chip connecting block is electrically connected with the chip on the bottom metal insulation substrate and the chip on the top metal insulation substrate.
Further, the bottom metal insulating substrate is sintered with an upper half-bridge switch chip and an upper half-bridge diode chip on a surface facing the top metal insulating substrate, and the top metal insulating substrate is sintered with a lower half-bridge switch chip and a lower half-bridge diode chip on a surface facing the bottom metal insulating substrate.
Further, the positive power terminal is sintered on the bottom metal insulating substrate, the negative power terminal is sintered on the top metal insulating substrate, the chip connecting block is sintered with the upper half-bridge switch chip and the upper half-bridge diode chip on the surface facing the bottom metal insulating substrate, and is sintered with the lower half-bridge switch chip and the lower half-bridge diode chip on the surface facing the top metal insulating substrate.
Further, the chip connecting blocks are divided into a first chip connecting block and a second chip connecting block, and the first chip connecting block and the second chip connecting block are sintered with the output local metal layer; the first chip connecting block is sintered with the lower half-bridge diode chip on the surface facing the top metal insulating substrate, and sintered with the upper half-bridge switch chip on the surface facing the bottom metal insulating substrate; the second chip connection block is sintered with the lower half-bridge switch chip on the surface facing the top metal insulation substrate, and sintered with the upper half-bridge diode chip on the surface facing the bottom metal insulation substrate.
Further, the upper half-bridge switch chip and the lower half-bridge diode chip are stacked, and the lower half-bridge switch chip and the upper half-bridge diode chip are stacked.
Further, an upper half-bridge surface metal layer and an output local metal layer are arranged on the bottom metal insulating substrate, an upper half-bridge switch chip and an upper half-bridge diode chip are sintered on the upper half-bridge surface metal layer, when the upper half-bridge switch chip is an IGBT, a positive power terminal is electrically connected with a collector of the upper half-bridge switch chip and a negative electrode of the upper half-bridge diode chip, and when the upper half-bridge switch chip is a MOSFET, the positive power terminal is electrically connected with a drain of the upper half-bridge switch chip and a negative electrode of the upper half-bridge diode chip.
Further, the output power terminal comprises a welding part and a connecting part positioned outside the plastic package shell, wherein the welding part is positioned between the bottom metal insulation substrate and the top metal insulation substrate; the top metal insulating substrate is provided with a lower half-bridge surface metal layer, a lower half-bridge driving local metal layer, a first upper half-bridge driving local metal layer and a second upper half-bridge driving local metal layer, a lower half-bridge switch chip and a lower half-bridge diode chip are sintered on the lower half-bridge surface metal layer, the lower half-bridge surface metal layer and the lower half-bridge driving local metal layer are respectively connected with a lower half-bridge driving terminal, and the first upper half-bridge driving local metal layer and the second upper half-bridge driving local metal layer are respectively connected with an upper half-bridge driving terminal;
when the lower half-bridge switch chip is an IGBT, the lower half-bridge surface metal layer is connected with an emitter of the IGBT chip; when the lower half-bridge switch chip is a MOSFET, the metal layer on the surface of the lower half-bridge is connected with the source electrode of the MOSFET chip, the lower half-bridge driving local metal layer is connected with the gate electrode of the lower half-bridge switch chip, the first upper half-bridge driving local metal layer is connected with the gate electrode of the upper half-bridge switch chip, and the second upper half-bridge driving local metal layer is connected with the welding part of the output power terminal.
Further, the bottom metal insulating substrate back metal layer and the top metal insulating substrate back metal layer are respectively provided with a first heat dissipation device and a second heat dissipation device.
Furthermore, the plastic package shell is manufactured by a transfer mold integrated molding process, and the middle part of the upper surface of the back metal layer of the top metal insulation substrate and the middle part of the lower surface of the back metal layer of the bottom metal insulation substrate are exposed outside the plastic package shell and are higher than the plastic package shell.
Further, the low parasitic inductance double-sided heat dissipation power module is of a three-phase bridge structure and comprises three positive power terminals, three negative power terminals and three output power terminals, and the topology structure is three half-bridges.
The beneficial effects are that: according to the invention, the bottom metal insulating substrate and the top metal insulating substrate are arranged in a laminated manner, a stacking relationship exists between part of chips, the output power terminal is arranged between the bottom metal insulating substrate and the top metal insulating substrate, so that the parasitic inductance of a loop can be greatly reduced, the output local metal layer is connected with the chip connecting block, the chip connecting block and the chip are sintered, and the material matched with the thermal expansion coefficient of the chip is adopted for interconnection, so that the risk of cracking of a welding layer can be reduced, and the reliability of the power module is improved; the stacking arrangement of the chips and the electrodes in the power module reduces the volume of the power module, saves the cost and the weight, and is particularly suitable for packaging the SiC power chip; meanwhile, the heat dissipation devices can be arranged on two sides of the power module, so that the heat resistance of the power module can be reduced, and the heat dissipation efficiency of the power module can be improved; and the power ends of the chips in the power module are all in a large-area sintering structure, bonding wires of the internal interconnection structure are fewer or no bonding wires, module failure caused by bonding wire failure is greatly reduced, overcurrent capacity is fully improved, and the reliability of the module is improved.
Drawings
FIG. 1 is a view showing the overall appearance of the present invention;
FIG. 2 is a front view and a partial enlarged view of the present invention;
FIG. 3 is a schematic view of the interior of the present invention;
FIG. 4 is a schematic cross-sectional view of the present invention;
FIG. 5 is a schematic view of a bottom MIS substrate assembly according to the present invention;
FIG. 6 is a schematic diagram of a top MIS substrate assembly according to the present invention;
FIG. 7 is an exploded view of the present invention;
FIG. 8 is a schematic diagram of a conventional half-bridge power module topology and a current commutating circuit;
FIG. 9 is a schematic diagram of a half-bridge power module topology and a commutation circuit of the present invention;
FIG. 10 is a schematic diagram of a three-phase bridge power module heat dissipation scheme;
FIG. 11 is an exploded view of a three-phase bridge power module installation;
FIG. 12 is a schematic diagram of the overall structure of a three-phase bridge power module;
fig. 13 is a three-phase bridge power module topology.
Detailed Description
The present technical solution is described in detail below by way of examples and with reference to the accompanying drawings.
According to the invention, the switch chip and the follow current diode chip of the opposite bridge arm are stacked, so that the path of the current conversion loop is shortest, and the parasitic inductance of the loop is greatly reduced; the chip surface realizes mechanical and electrical connection through the metal materials with matched thermal expansion coefficients, and the reliability of the power module is improved.
As shown in fig. 1, a double-sided heat dissipation high-reliability power module includes a positive power terminal 1, a negative power terminal 2, an output power terminal 3, a bottom metal insulating substrate 5, a top metal insulating substrate 4, and a plastic package housing 15 for encapsulation.
In this embodiment, the metal insulating substrates adopted by the bottom metal insulating substrate 5 and the top metal insulating substrate 4 are DBCs, that is, the bottom metal insulating substrate 5 includes an insulating substrate and metal layers on both sides of the substrate, a chip is mounted on one surface facing the top metal insulating substrate 4, the other surface on which the chip is not mounted is a bottom metal insulating substrate back metal layer 51, and similarly, the top metal insulating substrate 4 has the same structure, and the surface on which the chip is not mounted is a top metal insulating substrate back metal layer 41; the DBC structure may be omitted or a structure in which both sides of the insulating substrate are covered with aluminum or a structure in which both sides of the insulating medium are covered with a metal such as copper-clad aluminum.
As shown in fig. 2, in this embodiment, the plastic package housing 15 is manufactured by a transfer mold integrated molding process, that is, melted thermosetting plastic is injected into a mold cavity by means of a plastic package press, a sintered power module semi-finished product is placed in the mold cavity, and the melted thermosetting plastic is quickly cured and molded after reaching a curing temperature, so as to form the plastic package housing 15 shown in the design scheme of the present invention. The middle portion of the upper surface of the top metal insulating substrate back metal layer 41 and the middle portion of the lower surface of the bottom metal insulating substrate back metal layer 51 are exposed outside the plastic package case 15 and are higher than the plastic package case 15. The structure can enable the metal layer on the back of the metal insulating substrate to be better contacted with the heat dissipation device, and can achieve better heat dissipation effect.
As shown in fig. 3 and 4, the bottom metal insulating substrate 5 and the top metal insulating substrate 4 are stacked, the bottom metal insulating substrate 5 and the top metal insulating substrate 4 are sintered with chips on the surfaces opposite to each other, the positive electrode power terminal 1 is electrically connected to the chips on the bottom metal insulating substrate 5, and the negative electrode power terminal 2 is electrically connected to the chips on the top metal insulating substrate 4; the bottom metal insulating substrate 5 is sintered with an upper half-bridge switch chip 6 and an upper half-bridge diode chip 7 on a face facing the top metal insulating substrate 4, the top metal insulating substrate 4 is sintered with a lower half-bridge switch chip 8 and a lower half-bridge diode chip 9 on a face facing the bottom metal insulating substrate 5, specifically, the positive power terminal 1 is sintered on the bottom metal insulating substrate 5, the negative power terminal 2 is sintered on the top metal insulating substrate 4, the chip connection block is sintered with the upper half-bridge switch chip 6 and the upper half-bridge diode chip 7 on a face facing the bottom metal insulating substrate 5, and is sintered with the lower half-bridge switch chip 8 and the lower half-bridge diode chip 9 on a face facing the top metal insulating substrate 4.
The sintering in this embodiment is specifically performed by sintering the solder layer 14, and since the switch chip has a structure in which the upper surface and the lower surface of the switch chip are titanium-nickel-silver metal by electroplating or sputtering or evaporating silicon or silicon carbide material, the solder layer 14 may be a solder layer 14 formed by sintering solder such as tin-lead or a solder layer 14 formed by sintering silver paste.
The upper half-bridge switch chip 6 and the lower half-bridge diode chip 9 are laminated, the lower half-bridge switch chip 8 and the upper half-bridge diode chip 7 are laminated, and the specific connection mode is as follows:
as shown in fig. 5, an upper half-bridge surface metal layer 521 and an output local metal layer 522 are disposed on the bottom metal insulating substrate 5, an upper half-bridge switch chip 6 and an upper half-bridge diode chip 7 are sintered on the upper half-bridge surface metal layer 521, when the upper half-bridge switch chip 6 is an IGBT, the positive electrode power terminal 1 is electrically connected to the collector of the upper half-bridge switch chip 6 and the negative electrode of the upper half-bridge diode chip 7, and when the upper half-bridge switch chip 6 is a MOSFET, the positive electrode power terminal 1 is electrically connected to the drain of the upper half-bridge switch chip 6 and the negative electrode of the upper half-bridge diode chip 7.
As shown in fig. 6, a lower half-bridge surface metal layer 421, a lower half-bridge driving local metal layer 422, a first upper half-bridge driving local metal layer 423 and a second upper half-bridge driving local metal layer 424 are disposed on the top metal insulating substrate 4, a lower half-bridge switch chip 8 and a lower half-bridge diode chip 9 are sintered on the lower half-bridge surface metal layer 421, the lower half-bridge surface metal layer 421 and the lower half-bridge driving local metal layer 422 are respectively connected with a lower half-bridge driving terminal, and the first upper half-bridge driving local metal layer 423 and the second upper half-bridge driving local metal layer 424 are respectively connected with an upper half-bridge driving terminal;
when the lower half-bridge switch chip 8 is an IGBT, the lower half-bridge surface metal layer 421 is connected with the emitter of the IGBT chip; when the lower half-bridge switching chip 8 is a MOSFET, the lower half-bridge surface metal layer 421 is connected to the source of the MOSFET chip, the lower half-bridge driving partial metal layer 422 is connected to the gate of the lower half-bridge switching chip 8, the first upper half-bridge driving partial metal layer 423 is connected to the gate of the upper half-bridge switching chip 6, and the second upper half-bridge driving partial metal layer 424 is connected to the solder portion 31 of the output power terminal 3.
Referring to fig. 5 and 6, as shown in fig. 7, the output power terminal 3 includes a soldering portion 31 and a connection portion 32 provided with a mounting hole, the soldering portion 31 is located between the bottom metal insulating substrate 5 and the top metal insulating substrate 4, an output partial metal layer 522 is provided on the bottom metal insulating substrate 5 or the top metal insulating substrate 4, the output power terminal 3 is connected with a chip connection block through the output partial metal layer 522, and the chip connection block is electrically connected with a chip on the bottom metal insulating substrate 5 and a chip on the top metal insulating substrate 4. The welding portion 31 in this embodiment is a planar structure, and one end of the welding portion 31 is bent and extends upwards to form a connecting portion 32 with a mounting hole, and the welding portion can be made into a monolithic plate structure without bending according to actual needs.
The welding part 31 is provided with an upper half-bridge driving connection end, the upper half-bridge driving connection end is connected with a second upper half-bridge driving partial metal layer 424 of the top metal insulation substrate 4, and the other end of the second upper half-bridge driving partial metal layer 424 is connected with an upper half-bridge driving terminal. The upper half-bridge driving connection end in the embodiment can adopt an independent metal connection block, can also be in an integrated structure with the output power terminal 3, and the gate electrode of the upper half-bridge switch chip 6 is electrically connected with the first upper half-bridge driving local metal layer 423 of the top metal insulating substrate 4 by adopting a metal connection block, wherein the metal connection block is made of a conductive material; the chip connecting block can be made of metal materials such as molybdenum, tungsten and copper which are matched with the thermal expansion coefficient of the chip, and the thermal expansion coefficient of the chip connecting block is preferably in the range of 2-8 ppm/DEG C, so that the thermal stress of a sintering layer between the chip and the chip connecting block can be reduced, the premature cracking and failure of the sintering layer are avoided, and the reliability is improved. In addition, the first upper half-bridge driving partial metal layer 423 may be disposed on the bottom metal insulating substrate 5, and in this case, the gate electrode of the upper half-bridge switching chip 6 and the first upper half-bridge driving partial metal layer 423 may be connected using a bonding wire.
The chip connection blocks can be integrated or split according to the number of chips, and in this embodiment, the chip connection blocks are divided into a first chip connection block 331 and a second chip connection block 332, and the first chip connection block 331 and the second chip connection block 332 are sintered with the output local metal layer 522; the first chip connection block 331 is sintered with the lower half-bridge diode chip 9 on the side facing the top metal insulating substrate 4 and with the upper half-bridge switch chip 6 on the side facing the bottom metal insulating substrate 5; the second chip connection block 332 is sintered with the lower half-bridge switching chip 8 on the side facing the top metal insulating substrate 4 and with the upper half-bridge diode chip 7 on the side facing the bottom metal insulating substrate 5.
Fig. 8 and 9 are respectively a conventional half-bridge topology structure and a half-bridge topology structure of the present invention, in the conventional power module, a collector or a drain of a switch chip is connected with a metal layer on the surface of a metal insulating substrate through a welding layer 14, an emitter or a source of the switch chip is connected with the metal layer on the surface through a bonding wire, that is, an upper half-bridge switch chip 6 is connected with a lower half-bridge diode chip 9 through a bonding wire and a metal layer, and thick lines in the figures represent paths of freewheeling loops; the upper half-bridge switch chip 6 and the lower half-bridge diode chip 9 are arranged in a laminated mode, a metal layer and a bonding wire of a middle metal insulation substrate are omitted, and the connecting path is shortest, so that the current-converting loop is shortest, and parasitic inductance is greatly reduced.
Fig. 10 and 11 are schematic connection diagrams of a power module and a heat sink, wherein a first heat sink 12 and a second heat sink 13 are respectively disposed on a bottom metal insulating substrate back metal layer 51 and a top metal insulating substrate back metal layer 41. The top metal insulating substrate back metal layer 41 is in contact with the first heat sink 12 through a thermally conductive silicone grease or other thermally conductive material, and the bottom metal insulating substrate back metal layer 51 is also in contact with the second heat sink 13 through a thermally conductive silicone grease or other thermally conductive material; insulation pads 121 are installed on two sides of the second heat dissipation device 13, and the insulation pads 121 are contacted with positive/negative power terminals of the power module, so that busbar installation is facilitated.
As shown in fig. 12, the present invention may also be applied to a three-phase bridge structure, where three half-bridge power modules described in the present invention are arranged in a line and packaged in the same plastic package, so that a low parasitic inductance three-phase bridge power module may be implemented, that is, a power module includes three positive power terminals 11, three negative power terminals 22, and three output power terminals 33, and the topology structure of the power module is three half-bridges, as shown in fig. 13.
The invention may be used as a basis for forming semiconductor chips, with silicon substrates, with germanium substrates or III-V semiconductor materials, such as GaN or SiC; in addition, for packaging, molding or encapsulation, a plastic material, a ceramic material, or the like may be used.
The foregoing is only a preferred embodiment of the invention, it being noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the invention.
Claims (8)
1. The utility model provides a two-sided heat dissipation high reliability power module, includes positive pole power terminal (1), negative pole power terminal (2), output power terminal (3), top metal insulation base plate (4), bottom metal insulation base plate (5) and plastic envelope shell (15), bottom metal insulation base plate (5) and top metal insulation base plate (4) stromatolite setting, bottom metal insulation base plate (5) all sinter the chip on the two opposite faces of top metal insulation base plate (4), and positive pole power terminal (1) is connected with the chip electricity on bottom metal insulation base plate (5), and negative pole power terminal (2) are connected with the chip electricity on top metal insulation base plate (4); an output local metal layer (522) is arranged on the bottom metal insulating substrate (5) or the top metal insulating substrate (4), the output power terminal (3) is connected with a chip connecting block through the output local metal layer (522), and the chip connecting block is electrically connected with a chip on the bottom metal insulating substrate (5) and a chip on the top metal insulating substrate (4);
the bottom metal insulating substrate (5) is sintered with an upper half-bridge switch chip (6) and an upper half-bridge diode chip (7) on the surface facing the top metal insulating substrate (4), and the top metal insulating substrate (4) is sintered with a lower half-bridge switch chip (8) and a lower half-bridge diode chip (9) on the surface facing the bottom metal insulating substrate (5);
the chip connecting blocks are divided into a first chip connecting block (331) and a second chip connecting block (332), and the first chip connecting block (331) and the second chip connecting block (332) are sintered with the output local metal layer (522); the first chip connecting block (331) is sintered with the lower half-bridge diode chip (9) on the surface facing the top metal insulating substrate (4) and is sintered with the upper half-bridge switch chip (6) on the surface facing the bottom metal insulating substrate (5); the second chip connecting block (332) is sintered with the lower half-bridge switch chip (8) on the surface facing the top metal insulating substrate (4) and is sintered with the upper half-bridge diode chip (7) on the surface facing the bottom metal insulating substrate (5); the chip connecting block is made of a metal material matched with the thermal expansion coefficient of the chip, and comprises molybdenum, tungsten and copper, and the thermal expansion coefficient of the chip connecting block ranges from 2 ppm to 8 ppm/DEG C.
2. The double-sided heat dissipation high reliability power module according to claim 1, wherein the positive power terminal (1) is sintered on the bottom metal insulating substrate (5), the negative power terminal (2) is sintered on the top metal insulating substrate (4), the chip connection block is sintered with the upper half bridge switch chip (6) and the upper half bridge diode chip (7) on the side facing the bottom metal insulating substrate (5), and with the lower half bridge switch chip (8) and the lower half bridge diode chip (9) on the side facing the top metal insulating substrate (4).
3. The double-sided heat dissipation high reliability power module according to claim 1, wherein the upper half bridge switch chip (6) is stacked with the lower half bridge diode chip (9), and the lower half bridge switch chip (8) is stacked with the upper half bridge diode chip (7).
4. The dual-sided heat dissipation high-reliability power module according to claim 1, wherein an upper half-bridge surface metal layer (521) and an output local metal layer (522) are arranged on the bottom metal insulating substrate (5), an upper half-bridge switch chip (6) and an upper half-bridge diode chip (7) are sintered on the upper half-bridge surface metal layer (521), when the upper half-bridge switch chip (6) is an IGBT, the positive power terminal (1) is electrically connected with the collector of the upper half-bridge switch chip (6) and the negative electrode of the upper half-bridge diode chip (7), and when the upper half-bridge switch chip (6) is a MOSFET, the positive power terminal (1) is electrically connected with the drain of the upper half-bridge switch chip (6) and the negative electrode of the upper half-bridge diode chip (7).
5. A double-sided heat dissipating high reliability power module according to claim 1, wherein the output power terminal (3) comprises a solder (31) and a connection (32) outside the plastic package (15), the solder (31) being located between the bottom metal insulating substrate (5) and the top metal insulating substrate (4); the top metal insulating substrate (4) is provided with a lower half-bridge surface metal layer (421), a lower half-bridge driving local metal layer (422), a first upper half-bridge driving local metal layer (423) and a second upper half-bridge driving local metal layer (424), a lower half-bridge switch chip (8) and a lower half-bridge diode chip (9) are sintered on the lower half-bridge surface metal layer (421), the lower half-bridge surface metal layer (421) and the lower half-bridge driving local metal layer (422) are respectively connected with a lower half-bridge driving terminal, and the first upper half-bridge driving local metal layer (423) and the second upper half-bridge driving local metal layer (424) are respectively connected with an upper half-bridge driving terminal;
when the lower half-bridge switch chip (8) is an IGBT, the lower half-bridge surface metal layer (421) is connected with the emitter of the IGBT chip; when the lower half-bridge switch chip (8) is a MOSFET, the lower half-bridge surface metal layer (421) is connected with the source electrode of the MOSFET chip, the lower half-bridge driving local metal layer (422) is connected with the gate electrode of the lower half-bridge switch chip (8), the first upper half-bridge driving local metal layer (423) is connected with the gate electrode of the upper half-bridge switch chip (6), and the second upper half-bridge driving local metal layer (424) is connected with the welding part (31) of the output power terminal (3).
6. The double-sided radiating high-reliability power module according to claim 1, wherein the top metal insulating substrate back metal layer (41) and the bottom metal insulating substrate back metal layer (51) are respectively provided with a first radiating device (12) and a second radiating device (13).
7. The dual-sided heat dissipation high reliability power module of claim 1, wherein the plastic package housing (15) is manufactured by a transfer mold integrated molding process, and the middle part of the upper surface of the back metal layer (41) of the top metal insulating substrate and the middle part of the lower surface of the back metal layer (51) of the bottom metal insulating substrate are exposed outside the plastic package housing (15) and are higher than the plastic package housing (15).
8. The double-sided heat dissipation high-reliability power module according to claim 1, wherein the double-sided heat dissipation high-reliability power module is of a three-phase bridge structure and comprises three positive power terminals (1), three negative power terminals (2) and three output power terminals (3), and the topology structure is three half-bridges.
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| CN110594987A (en) * | 2018-06-13 | 2019-12-20 | 广东美的制冷设备有限公司 | Air conditioner and integrated air conditioner controller |
| CN110594989A (en) * | 2018-06-13 | 2019-12-20 | 广东美的制冷设备有限公司 | Air conditioner and integrated air conditioner controller |
| CN110594984A (en) * | 2018-06-13 | 2019-12-20 | 重庆美的制冷设备有限公司 | Air conditioner and integrated air conditioner controller |
| CN110594988A (en) * | 2018-06-13 | 2019-12-20 | 广东美的制冷设备有限公司 | Air conditioner and integrated air conditioner controller |
| CN110601556A (en) * | 2018-06-13 | 2019-12-20 | 重庆美的制冷设备有限公司 | High-integration intelligent power module and air conditioner |
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| CN110838480B (en) * | 2019-11-09 | 2021-04-16 | 北京工业大学 | Packaging structure and manufacturing method of silicon carbide MOSFET module |
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