CN207165543U - A kind of low stray inductance two-side radiation power model - Google Patents
A kind of low stray inductance two-side radiation power model Download PDFInfo
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- CN207165543U CN207165543U CN201720691184.XU CN201720691184U CN207165543U CN 207165543 U CN207165543 U CN 207165543U CN 201720691184 U CN201720691184 U CN 201720691184U CN 207165543 U CN207165543 U CN 207165543U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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Abstract
The utility model discloses a kind of low stray inductance two-side radiation power model, including positive pole power terminal, negative pole power terminal, power output terminal, top metal insulated substrate and bottom metal insulated substrate, top metal insulated substrate is set with bottom metal insulated substrate lamination, sintering has chip to top metal insulated substrate on the two relative face with bottom metal insulated substrate, positive pole power terminal electrically connects with the chip on bottom metal insulated substrate, and negative pole power terminal electrically connects with the chip on top metal insulated substrate；Power output terminal includes weld part and the connecting portion provided with mounting hole, and welding position is between the chip sintered on the chip and bottom metal insulated substrate sintered on top metal insulated substrate.The utility model greatly reduces loop stray inductance, reduces the volume of power model, has saved cost, alleviates weight, is especially suitable for the encapsulation of SiC power chips, substantially increases conveyance capacity, improve the reliability of module.
Description
Technical field
Electric and electronic power module is the utility model is related to, especially a kind of low stray inductance two-side radiation power model.
Background technology
Power Electronic Technique occupies very important status, electric and electronic power mould in current fast-developing industrial circle
Representative of the block as Power Electronic Technique, it is widely used to the row such as electric automobile, photovoltaic generation, wind-power electricity generation, industrial frequency conversion
Industry.With the emergence of China's industry, electric and electronic power module has more wide market prospects.
Existing electric and electronic power module encapsulation volume is big, weight weight, does not meet the fields such as electric automobile, Aero-Space
High power density, light-weighted requirement.The larger electric and electronic power module of volume, its stray inductance is often also bigger, this
It can cause that overshoot voltage is larger, loss increase, and also limit the application in high switching frequency occasion.SiC power electronics devices
Part has high frequency, high temperature, efficient characteristic, but the stray inductance of existing power model is larger, limits the performance of SiC performances.
In addition, with the continuous upgrading of application end power density, the encapsulating structure of existing power model has hindered power density
Further lifting, it is necessary to which the needs of power density is growing could be met by developing significantly more efficient radiator structure.
Existing two-side radiation power model such as CN105161477A, because chip individual layer is set, the commutation circuit of electric current
Area is still larger, and often stray inductance is also bigger, and chip individual layer is set so that the volume of power model is relatively
Greatly, power terminal is only connected with control terminal with the first liner plate in addition, sets underaction, liner plate area not to subtract further
It is small, it can also cause loss to increase because current path is longer.
Utility model content
Purpose of utility model：In view of the above-mentioned drawbacks of the prior art, the utility model aim to provide a kind of small volume,
Two-side radiation power model in light weight, stray inductance is small.
Technical scheme：A kind of low stray inductance two-side radiation power model, including positive pole power terminal, negative pole power end
Son, power output terminal, top metal insulated substrate, bottom metal insulated substrate and plastic shell, the top metal insulation
Substrate is set with bottom metal insulated substrate lamination, and top metal insulated substrate is relative at the two with bottom metal insulated substrate
On face sintering have chip, positive pole power terminal electrically connects with the chip on bottom metal insulated substrate, negative pole power terminal and
Chip electrical connection on top metal insulated substrate；The power output terminal includes weld part and outside plastic shell
Connecting portion, the welding position is in the core sintered on the chip and bottom metal insulated substrate sintered on top metal insulated substrate
Between piece.
Further, the bottom metal insulated substrate sinters in the one side towards top metal insulated substrate upper half
Bridge switch chip and upper half-bridge diode chip for backlight unit, top metal insulated substrate burn in the one side towards bottom metal insulated substrate
Have lower half-bridge switch chip and lower half-bridge diode chip for backlight unit.
Further, the positive pole power terminal is sintered on bottom metal insulated substrate, and negative pole power terminal is sintered in
On top metal insulated substrate, weld part is in the one side towards bottom metal insulated substrate and upper half-bridge switch chip and upper half-bridge
Diode chip for backlight unit sinters, in the one side towards top metal insulated substrate and lower half-bridge switch chip and lower half-bridge diode chip for backlight unit
Sintering.
Further, the upper half-bridge switch chip is set with lower half-bridge diode chip for backlight unit lamination, lower half-bridge switch chip
Set with upper half-bridge diode chip for backlight unit lamination.
Further, the bottom metal insulated substrate is provided with bottom metal insulated substrate surface metal-layer, bottom gold
Sintering has upper half-bridge switch chip and upper half-bridge diode chip for backlight unit on category insulated substrate surface metal-layer, when the upper half-bridge switch
When chip is IGBT, positive pole power terminal and the colelctor electrode of upper half-bridge switch chip and the negative electricity of upper half-bridge diode chip for backlight unit
Connection, when the upper half-bridge switch chip be MOSFET, the drain electrode of the positive pole power terminal and upper half-bridge switch chip with
And the negative pole electrical connection of upper half-bridge diode chip for backlight unit.
Further, the top metal insulated substrate is provided with top metal insulated substrate surface metal-layer, first
Half-bridge driven localized metallic layer on half-bridge driven localized metallic layer and second, on the top metal insulated substrate surface metal-layer
Sintering has lower half-bridge switch chip and lower half-bridge diode chip for backlight unit, and half-bridge drives on half-bridge driven localized metallic layer and second on first
Dynamic localized metallic layer is connected with a upper half-bridge drive terminal respectively, and half-bridge drives on the gate pole of upper half-bridge switch chip and described first
Dynamic localized metallic layer electrical connection, power output terminal electrically connect with half-bridge driven localized metallic layer on second.
Lower half-bridge driven localized metallic layer, lower half-bridge driven localized metallic layer are additionally provided with the top metal insulated substrate
It is connected with the gate pole of the lower half-bridge switch chip, the other end of lower half-bridge driven localized metallic layer is connected with a lower half-bridge and driven
Moved end, the top metal insulated substrate surface metal-layer are also connected with a lower half-bridge drive terminal.
Further, on the top metal insulated substrate metal layer on back and bottom metal insulated substrate metal layer on back
It is respectively equipped with the first heat abstractor and the second heat abstractor.
Further, the weld part of the power output terminal is matrix in the position contacted with chip, not with chip
The position of contact is three-decker, and middle one layer is matrix, and upper and lower both sides are obturator.
Further, stress-buffer layer is filled between the weld part and chip of the power output terminal.
Further, the plastic shell makes to transmit mould integrated forming technique, the top metal insulated substrate back side
The center section of metal level upper surface and the center section of bottom metal insulated substrate metal layer on back lower surface are exposed independent from
The outside of plastic shell, and it is higher by plastic shell.
Further, the low stray inductance two-side radiation power model is three-phase bridge structure, including three positive pole power
Terminal, three negative pole power terminals and three power output terminals, topological structure are three half-bridges.
Beneficial effect：Top metal insulated substrate of the present utility model is set with bottom metal insulated substrate lamination, part
Stacked relation between chip be present, power output terminal also serves as layer structure and is sintered in top metal insulated substrate and bottom gold
Between belonging to insulated substrate, loop stray inductance can be substantially reduced, and the stacking of power model inside chip and electrode is set,
The volume of power model is reduced, has saved cost, alleviates weight, is especially suitable for the encapsulation of SiC power chips；Meanwhile work(
The settable heat abstractor in the both sides of rate module, the thermal resistance of power model can be reduced, improve the radiating efficiency of power model；And
And the power end of power model inside chip all only has one using large area sintering structure, the bonding line of inner interconnection structure
Bar or without bonding line, Module Fail caused by greatly reducing bonding line failure, substantially increases conveyance capacity, improves module
Reliability.
Brief description of the drawings
Fig. 1 is the overall appearance structure chart of embodiment 1；
Fig. 2 is the front view of embodiment 1 and partial enlarged drawing；
Fig. 3 is the schematic internal view of embodiment 1；
Fig. 4 is the inside front view of embodiment 1 and partial enlarged drawing；
Fig. 5 is the bottom metal insulated substrate component diagram of embodiment 1；
Fig. 6 is the top metal insulated substrate component diagram of embodiment 1；
Fig. 7 is the exploded perspective view of embodiment 1；
Fig. 8 is conventional half-bridge power model topological structure and commutation circuit schematic diagram；
Fig. 9 is the half-bridge power module topological structure of embodiment 1 and commutation circuit schematic diagram；
Figure 10 is three-phase bridge power model heat sink conception schematic diagram；
Figure 11 is three-phase bridge power model installation explosive view；
Figure 12 is three-phase bridge power model overall structure diagram；
Figure 13 is three-phase bridge power model topological diagram；
Figure 14 is the structural representation of embodiment 2；
Figure 15 is the structural representation of embodiment 3；
Figure 16 is the schematic internal view of embodiment 4；
Figure 17 is the bottom metal insulated substrate component diagram of embodiment 4；
Figure 18 is the top metal insulated substrate component diagram of embodiment 4；
Figure 19 is the exploded perspective view of embodiment 4.
Embodiment
The technical program is described in detail by way of example and in conjunction with the accompanying drawings.
Embodiment 1：
The utility model is by by the chip-stacked setting of fly-wheel diode of switch chip and relative bridge arm so that the change of current is returned
Road shortest path, so as to greatly reduce loop stray inductance；By stacking the both sides for setting chip setting thermal dissipating path, reach
The purpose of two-side radiation, further reduce the thermal resistance of power model.
As shown in figure 1, a kind of low stray inductance two-side radiation power model, including positive pole power terminal 1, negative pole power end
Son 2, power output terminal 3, the bottom metal insulated substrate 5 being connected with positive pole power terminal 1, it is connected with negative pole power terminal 2
Top metal insulated substrate 4, upper half-bridge drive terminal 10, lower half-bridge drive terminal 11 and the plastic shell for encapsulating
15, the positive pole power terminal 1 in the present embodiment is sintered on bottom metal insulated substrate 5, and negative pole power terminal 2 is sintered in top
On metal-insulator substrate 4, two power terminals can also be sintered on the same substrate, then by metal contiguous block or other
Connected mode is connected to another substrate, realizes that positive pole power terminal 1 electrically connects with the chip on bottom metal insulated substrate 5, bears
Pole power terminal 2 electrically connects with the chip on top metal insulated substrate 4；Also, top metal insulated substrate 4 in the present embodiment
It is DBC with metal-insulator substrate used by bottom metal insulated substrate 5, i.e., top metal insulated substrate 4 includes insulation base
Plate and the metal level of substrate both sides, towards the one side of bottom metal insulated substrate 5 on be mounted with chip, non-chip it is another
Face is then top metal insulated substrate metal layer on back 41, and similarly, bottom metal insulated substrate 5 also has identical structure, does not pacify
Cartridge chip one side is bottom metal insulated substrate metal layer on back 51；Those skilled in the art can not also use DBC when implementing
Structure, aluminium can also be covered using insulated substrate both sides, or side Fu Tong sides cover the metals such as aluminium and are covered in dielectric both sides
Structure；Plastic shell 15 makes to transmit mould integrated forming technique, i.e., by plastic package press by the thermosetting plastics of thawing
It is injected into die cavity, the power model semi-finished product through oversintering is placed with die cavity, the thermosetting plastics of thawing reaches solidification temperature
Can be fast curing-formed after degree, form the plastic shell 15 shown in the utility model design.Top metal insulated substrate is carried on the back
The center section of the upper surface of face metal level 41 and the center section of the lower surface of bottom metal insulated substrate metal layer on back 51 are equal
Expose in the outside of plastic shell 15, and be higher by plastic shell 15, as shown in Fig. 2 this structure can make metal-insulator base
Back metal level preferably contacts with heat abstractor, it is possible to achieve more preferable radiating effect.
As shown in figure 3, inside power model, top metal insulated substrate 4 is set with the lamination of bottom metal insulated substrate 5,
For parallel face structure, the metal-insulator substrate being connected in the present embodiment with negative pole power terminal 2 is top metal insulated substrate
4, the metal-insulator substrate being connected with positive pole power terminal 1 is bottom metal insulated substrate 5, and can also insulate top metal base
The component of plate 4 is exchanged with the module position of bottom metal insulated substrate 5, does not influence the effect of present design.Top metal insulation base
Sintering has chip to plate 4 on the two relative face with bottom metal insulated substrate 5；The power output terminal 3 includes welding
Portion 31 and the connecting portion 32 outside plastic shell 15, the connecting portion 32 in the present embodiment are provided with mounting hole；The weld part
Between the chip sintered on 31 chips and bottom metal insulated substrate 5 sintered on top metal insulated substrate 4；This implementation
Weld part 31 in example is planar structure, and one end of weld part 31 bends and upwardly extends to form the connecting portion with mounting hole,
Also a monoblock slab construction can be made as during concrete application according to being actually needed without bending.
The layout of power model inside chip is as shown in figure 4, chip is arranged as stacked structure, and bottom is golden in the present embodiment
Category insulated substrate 5 sintered in the one side towards top metal insulated substrate 4 have on half-bridge switch chip 6 and upper half-bridge diode
Chip 7, top metal insulated substrate 4 sinters in the one side towards bottom metal insulated substrate 5 the lower He of half-bridge switch chip 8
Lower half-bridge diode chip for backlight unit 9.Specifically：Half-bridge switch chip, power output terminal are provided with bottom metal insulated substrate 5
3 weld part 31 is sintered in the upper surface of half-bridge power chip, and sintering has lower half-bridge diode core on power output terminal 3
Piece 9, upper half-bridge switch chip are set with the lower lamination of half-bridge diode chip for backlight unit 9, and lower half-bridge diode chip for backlight unit 9 is located at upper half-bridge switch
The top of chip, the upper surface sintering of lower half-bridge diode have top metal insulated substrate 4；Similarly, bottom metal insulated substrate 5
On be additionally provided with half-bridge diode chip for backlight unit 7, the weld part 31 of power output terminal 3 is towards bottom metal insulated substrate 5
Simultaneously sintered with upper half-bridge switch chip 6 and upper half-bridge diode chip for backlight unit 7, the one side towards napex metal-insulator substrate 4 with
Lower half-bridge switch chip 8 and lower half-bridge diode chip for backlight unit 9 sinter.Specifically, the weld part 31 of power output terminal 3 is sintered in
The upper surface of half-bridge diode chip for backlight unit 7, also sintering has lower half-bridge switch chip, lower half-bridge switch core on power output terminal 3
Piece 8 is set with the upper lamination of half-bridge diode chip for backlight unit 7, and lower half-bridge switch chip 8 is located at the top of upper half-bridge diode chip for backlight unit 7, under
The upper surface of half-bridge switch chip 8 has also sintered top metal insulated substrate 4.
In order to further illustrate the position of chip and attachment structure, to upper half-bridge metal-insulator board unit, lower half-bridge gold
The structure of category insulated substrate component is described respectively, as shown in Figure 5, Figure 6.In Fig. 5, positive pole power terminal 1 is sintered in bottom
The layer on surface of metal of metal-insulator substrate 5, bottom metal insulated substrate 5 are provided with bottom metal insulated substrate surface metal-layer 52,
Sintering has upper half-bridge switch chip 6 and upper half-bridge diode chip for backlight unit 7 on bottom metal insulated substrate surface metal-layer 52, works as upper half
When bridge switch chip is IGBT, colelctor electrode and upper half-bridge diode chip for backlight unit of the positive pole power terminal 1 with upper half-bridge switch chip 6
7 negative pole electrical connection, when upper half-bridge switch chip 6 is MOSFET, the positive pole power terminal 1 and upper half-bridge switch chip 6
Drain electrode and upper half-bridge diode chip for backlight unit 7 negative pole electrical connection.
In Fig. 6, negative pole power terminal 2 is sintered in the layer on surface of metal of top metal insulated substrate 4, top metal insulated substrate
4 are provided with top metal insulated substrate surface metal-layer 42, first half-bridge drive on half-bridge driven localized metallic layer 421 and second
Localized metallic layer 422 is moved, sintering has lower half-bridge switch chip 8 and lower half on the top metal insulated substrate surface metal-layer 42
Bridge diode chip for backlight unit 9, half-bridge driven localized metallic layer 422 connects respectively on half-bridge driven localized metallic layer 421 and second on first
There is a upper half-bridge drive terminal 10, the gate pole of upper half-bridge switch chip 6 is driven by half-bridge on metal contiguous block and described first
Dynamic localized metallic layer 421 electrically connects, half-bridge driven localized metallic on the metal contiguous block and second that power output terminal 3 is provided with
Layer 422 electrically connects.
Lower half-bridge driven localized metallic layer 423, the local gold of lower half-bridge driven are additionally provided with the top metal insulated substrate 4
Category layer 423 is connected with the gate pole of the lower half-bridge switch chip 8, and the other end of lower half-bridge driven localized metallic layer 423 is connected with
One lower half-bridge drive terminal 11, the top metal insulated substrate surface metal-layer 42 are also connected with a lower half-bridge drive end
Son 11.
Fig. 7 gives the relation of power model inner. layers, and the sintering described in the present embodiment is specifically by weld layer
16 sintering, because the upper and lower surface of switch chip either sputters by electroplating or evaporates the metal structure for having titanium nickeline, therefore
Weld layer 16 can be the cored solders such as tin-lead by sintering the weld layer 16 formed or silver paste by sintering the weldering formed
Connect layer 16.In addition, in figure on the gate pole and first of upper half-bridge switch chip 6 between half-bridge driven localized metallic layer 421, output work
Metal contiguous block is employed on rate terminal 3 and second between half-bridge driven localized metallic layer 422 and realizes electrical connection, the metal
Block can select the metal material with the thermal coefficient of expansion comparison match of chip such as molybdenum, tungsten copper, if not using metal contiguous block
Connected mode, it can also be attached using bonding line.
Fig. 8, Fig. 9 are respectively conventional half-bridge topological structure and the utility model half-bridge topology, traditional power model
Inside, the colelctor electrode of switch chip or drain electrode are connected by weld layer 16 with metal-insulator substrate surface metal level, switch chip
Emitter stage or source electrode be connected by bonding line with surface metal-layer, i.e., upper half-bridge switch chip 6 and lower half-bridge diode chip for backlight unit 9
Between connected by bonding line, metal level, the thick line in figure represents continuous current circuit path；The utility model is by upper half-bridge switch core
Piece is set with the lower lamination of half-bridge diode chip for backlight unit 9, eliminates the metal-insulator substrate metal layer and bonding line of centre, its link road
Footpath is most short, therefore its commutation circuit is also most short, so as to considerably reduce stray inductance.
Figure 10, Figure 11 are the connection diagram of power model and heat abstractor, top metal insulated substrate metal layer on back
41 on bottom metal insulated substrate metal layer on back 51 with being respectively equipped with the first heat abstractor 12 and the second heat abstractor 13, top
Metal-insulator substrate back metal level 41 is contacted with the first heat abstractor 12 by heat-conducting silicone grease or other Heat Conduction Materials, bottom gold
Category insulated substrate metal layer on back 51 contacts also by heat-conducting silicone grease or other Heat Conduction Materials with the second heat abstractor 13；Second dissipates
The both sides of thermal 13 are provided with cross-over block 121, and cross-over block 121 is contacted with the positive/negative power terminal of power model, is easy to
Busbar is installed.
As shown in figure 12, the utility model can be applied in three-phase bridge structure, by described in three the utility model
The arrangement of the word of half-bridge power module structure one, and be encapsulated in inside same plastic shell, can be to realize the three of low stray inductance
Phase bridge power model, i.e. a power model include three positive pole power terminals, 1, three negative pole power terminal 2 and three outputs
Power terminal 3, its topological structure are three half-bridges, as shown in figure 13.
Embodiment 2：As shown in figure 14, the present embodiment and the structure of embodiment 1 are essentially identical, and difference is, this reality
It is matrix 311 that the weld part 31 of the power output terminal 3 in example, which is applied, in the position contacted with chip, in the position not contacted with chip
Three-decker is set to, middle one layer is matrix 311, and upper and lower both sides are obturator 312；Matrix 311 is that thermal coefficient of expansion is less
Metal molybdenum or tungsten copper, obturator 312 are the preferable argent of electric conductivity.
Power chip is sintered on the Mo substrate 311 of output electrode in the present embodiment, what output electrode did not contacted with chip
Position is machined with groove, and silver is filled with groove.The thermal coefficient of expansion of metal molybdenum is generally 1/3rd of copper, is relatively connect with chip
Closely, in the power model course of work, the thermal stress of weld layer 16 is smaller, and reliability is higher, but the electrical conductivity of molybdenum only has the three of copper
/ mono-, therefore do in the part of output electrode and fill silver-colored structure and can reduce the resistance of output electrode.
Embodiment 3：As shown in figure 15, the present embodiment and the structure of embodiment 1 are essentially identical, and difference is, output
Stress-buffer layer 14 is filled between the weld part 31 and chip of power terminal 3, the weld part 31 of the power output terminal 3 is
Metallic copper, stress-buffer layer 14 are metal molybdenum or tungsten copper.
Output electrode is pure copper material, because copper with the thermal expansion of chip differs larger, in order to improve the length of weld layer 16
Phase reliability, the present embodiment add the transition of stress-buffer layer 14 between chip and output electrode, i.e., burnt on the surface of chip
Metal molybdenum or tungsten copper are tied, then molybdenum or tungsten copper are sintered in output electrode again.
Embodiment 4：As illustrated in figs. 16-19, the present embodiment and the structure of embodiment 1 are essentially identical, and difference is, figure
In 17, bottom metal insulated substrate 5 is provided with bottom metal insulated substrate surface metal-layer 52, First partial metal level 53 and the
Two localized metallic layers 54, the 53 and second local metal level 54 of First partial metal level are connected with a upper half-bridge drive end respectively
Son 10, power output terminal 3 electrically connects with the second local metal level 54, so as to realize the control to upper half-bridge switch chip.
When the upper half-bridge switch chip 6 is IGBT, the colelctor electrode of positive pole power terminal 1 and upper half-bridge switch chip 6
And the negative pole electrical connection of upper half-bridge diode chip for backlight unit 7, the gate pole of upper half-bridge switch chip 6 pass through a bonding line and first game
Portion's metal level 53 electrically connects.
When the upper half-bridge switch chip 6 is MOSFET, the positive pole power terminal 1 and upper half-bridge switch chip 6
The electrical connection of the negative pole of drain electrode and upper half-bridge diode chip for backlight unit 7, the gate pole of upper half-bridge switch chip 6 pass through a bonding line and the
One localized metallic layer 53 electrically connects.
In Figure 18, it is local that top metal insulated substrate 4 is provided with top metal insulated substrate surface metal-layer 42 and the 3rd
Metal level 43, the other end of the 3rd localized metallic layer 43 are connected with a lower half-bridge drive terminal 11, the top metal insulation
Substrate surface metal level 42 is also connected with a lower half-bridge drive terminal 11；
When the lower half-bridge switch chip 8 is IGBT, the emitter stage of negative pole power terminal 2 and lower half-bridge switch chip 8
And the electrical connection of the positive pole of lower half-bridge diode chip for backlight unit 9, the gate pole and the phase of the 3rd localized metallic layer 43 of lower half-bridge switch chip 8
Even；
When the lower half-bridge switch chip 8 is MOSFET, the source electrode of negative pole power terminal 2 and lower half-bridge switch chip 8
And the electrical connection of the positive pole of lower half-bridge diode chip for backlight unit 9, the gate pole and the phase of the 3rd localized metallic layer 43 of lower half-bridge switch chip 8
Even.
The utility model can use silicon substrate as the basis for forming semiconductor chip, can also with using germanium substrate or
Person's III-V semi-conducting materials, for example, GaN or SiC；In addition, for packing, molding or encapsulate, plastic material can be used
Or ceramic material etc..
It the above is only preferred embodiment of the present utility model, it should be pointed out that：For the ordinary skill people of the art
For member, on the premise of the utility model principle is not departed from, some improvements and modifications can also be made, these improvements and modifications
Also it should be regarded as the scope of protection of the utility model.
Claims (11)
1. a kind of low stray inductance two-side radiation power model, including positive pole power terminal (1), negative pole power terminal (2), output
Power terminal (3), top metal insulated substrate (4), bottom metal insulated substrate (5) and plastic shell (15), it is characterised in that
The top metal insulated substrate (4) is set with bottom metal insulated substrate (5) lamination, top metal insulated substrate (4) and bottom
Sintering has chip, positive pole power terminal (1) and bottom metal insulation base to portion's metal-insulator substrate (5) on the two relative face
Chip electrical connection on plate (5), negative pole power terminal (2) electrically connect with the chip on top metal insulated substrate (4)；It is described defeated
Going out power terminal (3) includes weld part (31) and positioned at the outside connecting portion (32) of plastic shell (15), the weld part (31)
Between the chip sintered on the chip and bottom metal insulated substrate (5) sintered on top metal insulated substrate (4).
A kind of 2. low stray inductance two-side radiation power model according to claim 1, it is characterised in that the bottom gold
Category insulated substrate (5) sintering in the one side towards top metal insulated substrate (4) has upper half-bridge switch chip (6) and upper half-bridge
Diode chip for backlight unit (7), top metal insulated substrate (4) sinters in the one side towards bottom metal insulated substrate (5) lower half
Bridge switch chip (8) and lower half-bridge diode chip for backlight unit (9).
A kind of 3. low stray inductance two-side radiation power model according to claim 2, it is characterised in that the positive pole work(
Rate terminal (1) is sintered on bottom metal insulated substrate (5), and negative pole power terminal (2) is sintered in top metal insulated substrate (4)
On, weld part (31) is in the one side towards bottom metal insulated substrate (5) and upper half-bridge switch chip (6) and upper half-bridge diode
Chip (7) sinters, in the one side towards top metal insulated substrate (4) and lower half-bridge switch chip (8) and lower half-bridge diode
Chip (9) sinters.
A kind of 4. low stray inductance two-side radiation power model according to claim 2, it is characterised in that the upper half-bridge
Switch chip (6) is set with lower half-bridge diode chip for backlight unit (9) lamination, lower half-bridge switch chip (8) and upper half-bridge diode chip for backlight unit
(7) lamination is set.
5. a kind of low stray inductance two-side radiation power model according to claim 2, it is characterised in that bottom metal is exhausted
Edge substrate (5) is provided with bottom metal insulated substrate surface metal-layer (52), bottom metal insulated substrate surface metal-layer (52)
Upper sintering has upper half-bridge switch chip (6) and upper half-bridge diode chip for backlight unit (7), when the upper half-bridge switch chip is IGBT,
Positive pole power terminal (1) electrically connects with the colelctor electrode of upper half-bridge switch chip (6) and the negative pole of upper half-bridge diode chip for backlight unit, when
When the upper half-bridge switch chip (6) is MOSFET, the drain electrode of the positive pole power terminal (1) and upper half-bridge switch chip (6)
And the negative pole electrical connection of upper half-bridge diode chip for backlight unit.
A kind of 6. low stray inductance two-side radiation power model according to claim 2, it is characterised in that the top-gold
Belong to insulated substrate (4) provided with half-bridge driven localized metallic layer on top metal insulated substrate surface metal-layer (42), first
(421) half-bridge driven localized metallic layer (422) and on second, sinter on the top metal insulated substrate surface metal-layer (42)
There are a lower half-bridge switch chip (8) and lower half-bridge diode chip for backlight unit (9), half-bridge driven localized metallic layer (421) and second on first
Upper half-bridge driven localized metallic layer (422) is connected with a upper half-bridge drive terminal (10), the door of upper half-bridge switch chip (6) respectively
Pole electrically connects with half-bridge driven localized metallic layer (421) on described first, half-bridge driven office on power output terminal (3) and second
Portion's metal level (422) electrically connects；
Lower half-bridge driven localized metallic layer (423), the local gold of lower half-bridge driven are additionally provided with the top metal insulated substrate (4)
Category layer (423) is connected with the gate pole of the lower half-bridge switch chip (8), the other end of lower half-bridge driven localized metallic layer (423)
A lower half-bridge drive terminal (11) is connected with, the top metal insulated substrate surface metal-layer (42) is also connected with one
Half-bridge driven terminal (11).
A kind of 7. low stray inductance two-side radiation power model according to claim 1, it is characterised in that the top-gold
Category insulated substrate metal layer on back (41) is with being respectively equipped with the first radiating dress on bottom metal insulated substrate metal layer on back (51)
Put (12) and the second heat abstractor (13).
A kind of 8. low stray inductance two-side radiation power model according to claim 1, it is characterised in that the output work
The weld part (31) of rate terminal (3) is matrix (311) in the position contacted with chip, is three layers in the position not contacted with chip
Structure, middle one layer is matrix (311), and upper and lower both sides are obturator (312).
A kind of 9. low stray inductance two-side radiation power model according to claim 1, it is characterised in that the output work
The weld part (31) of rate terminal (3) is filled with stress-buffer layer (14) between chip.
A kind of 10. low stray inductance two-side radiation power model according to claim 1, it is characterised in that the plastic packaging
Shell (15) makes to transmit mould integrated forming technique, the centre of top metal insulated substrate metal layer on back (41) upper surface
The center section of part and bottom metal insulated substrate metal layer on back (51) lower surface is exposed independent from plastic shell (15)
Outside, and it is higher by plastic shell (15).
11. a kind of low stray inductance two-side radiation power model according to claim 1, it is characterised in that described low to post
Raw inductance two-side radiation power model is three-phase bridge structure, including three positive pole power terminals (1), three negative pole power terminals
(2) and three power output terminals (3), topological structure are three half-bridges.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107146775A (en) * | 2017-06-14 | 2017-09-08 | 扬州国扬电子有限公司 | A kind of low stray inductance two-side radiation power model |
| EP3598489A1 (en) * | 2018-07-18 | 2020-01-22 | Delta Electronics (Shanghai) Co., Ltd. | Power module structure |
| US11342241B2 (en) | 2018-07-18 | 2022-05-24 | Delta Electronics (Shanghai) Co., Ltd | Power module |
| US11444036B2 (en) | 2018-07-18 | 2022-09-13 | Delta Electronics (Shanghai) Co., Ltd. | Power module assembly |
-
2017
- 2017-06-14 CN CN201720691184.XU patent/CN207165543U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107146775A (en) * | 2017-06-14 | 2017-09-08 | 扬州国扬电子有限公司 | A kind of low stray inductance two-side radiation power model |
| EP3598489A1 (en) * | 2018-07-18 | 2020-01-22 | Delta Electronics (Shanghai) Co., Ltd. | Power module structure |
| US11342241B2 (en) | 2018-07-18 | 2022-05-24 | Delta Electronics (Shanghai) Co., Ltd | Power module |
| US11444036B2 (en) | 2018-07-18 | 2022-09-13 | Delta Electronics (Shanghai) Co., Ltd. | Power module assembly |
| US11490516B2 (en) | 2018-07-18 | 2022-11-01 | Delta Electronics (Shanghai) Co., Ltd | Power module structure |
| US11923265B2 (en) | 2018-07-18 | 2024-03-05 | Delta Electronics (Shanghai) Co., Ltd | Power module |
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