CN202695428U - Insulated gate bipolar transistor (IGBT) power module - Google Patents

Insulated gate bipolar transistor (IGBT) power module Download PDF

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Publication number
CN202695428U
CN202695428U CN2012202866151U CN201220286615U CN202695428U CN 202695428 U CN202695428 U CN 202695428U CN 2012202866151 U CN2012202866151 U CN 2012202866151U CN 201220286615 U CN201220286615 U CN 201220286615U CN 202695428 U CN202695428 U CN 202695428U
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igbt
layer
chip
power model
base plate
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庄伟东
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NANJING YINMAO MICROELECTRONIC MANUFACTURING CO LTD
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NANJING YINMAO MICROELECTRONIC MANUFACTURING CO LTD
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/404—Connecting portions
    • H01L2224/40475—Connecting portions connected to auxiliary connecting means on the bonding areas
    • H01L2224/40491—Connecting portions connected to auxiliary connecting means on the bonding areas being an additional member attached to the bonding area through an adhesive or solder, e.g. buffer pad
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

An insulated gate bipolar transistor (IGBT) power module is formed by a base plate, an IGBT chip and a freewheeling diode (FWD) chip, wherein a collector electrode on the back side of the IGBT chip and a cathode on the back side of the IGBT chip are respectively connected to the upper surface of the base plate through first solder layers, an emitting electrode on the front side of the IGBT chip is connected with a first conductive layer through a second solder layer, and an anode on the front side of the FWD chip is connected with a second conductive layer through a second solder layer. The laminating height of the IGBT chip, the second solder layer and the first conductive layer is the same as that of the FWD chip, the second solder layer and the second conductive layer. A surface electrode of the emitting electrode is connected to the upper portion of the first conductive layer and the upper portion of the second conductive layer through a third solder layer, and enables the first conductive layer, the second conductive layer and signal terminals and power terminals outside the first conductive layer and the second conducive layer to be connected together.

Description

A kind of IGBT power model
Technical field
The utility model relates to a kind ofIGBT power model, this IGBT power model are the elementary cells of preparation compression joint type superhigh pressure, super high power IGBT module.
Background technology
Insulated gate bipolar transistor (IGBT) module can be comprised of an igbt chip and a FWD chip, also can be comprised of a plurality of igbt chips and FWD chip, with the IGBT module of preparation different capacity grade and circuit structure.Circuit as shown in Figure 1 IGBT power model is comprised of an IGBT and a fly-wheel diode (FWD); When module needs larger power output, and single igbt chip is can't satisfy instructions for use the time, usually a plurality of power cells shown in Figure 1 must be carried out parallel connection, as shown in Figure 2: in parallel later IGBT power cell, can be used as the elementary cell that module is made, further connect into required circuit structure.
One of key technology of making the IGBT power model is supersonic bonding, and it is the major way that IGBT emitter, FWD anode are connected with external circuit.Because limited aluminum steel wire diameter, in order to increase current carrying capacity, the IGBT module must obtain High-current output by parallel connection by many aluminum steels of bonding usually; Although the ultrasonic wave aluminum wire bonding is the mainstream technology of making at present the IGBT power model, it has limited the possibility of making the laminated type module, and the larger distributed inductance of aluminum steel existence itself, has also limited the performance of module performance.
The positive appearance that can weld igbt chip is for the development of laminated type IGBT module provides the foundation.Owing to no longer adopt aluminum wire bonding, the distributed inductance of inside modules is greatly reduced.Laminated type IGBT module makes two-side radiation become possibility, by rational design, can make the equal larger electric current of IGBT output.
The utility model content
Content of the present utility model is to overcome the defective of prior art, a kind of IGBT power model is provided, igbt chip is connected connection and is adopted laminated type in this power model with the FWD chip, can two-side radiation, and can obtain higher power density, thereby provide more space for the miniaturization of power system.
The technical scheme that realizes the utility model purpose is: a kind of IGBT power model, by base plate, igbt chip and FWD chip form, the negative electrode of the collector electrode of described igbt chip reverse side and described igbt chip reverse side is connected in respectively the upper surface of described base plate by the first solder layer, the emitter in described igbt chip front is connected with the first conductive layer by the second solder layer, the anode of FWD chip front side is connected with the second conductive layer by the second solder layer, described igbt chip, the stack height of the second solder layer and the first conductive layer, with described FWD chip, the second solder layer is identical with the stack height of the second conductive layer, the emitter surface electrode passes through on the connection of the 3rd weld layer and described the first and second conductive layers, and with described first, the second conductive layer and outside signal terminal and power terminal link together.
In the technique scheme, described base plate can be metallic plate, and the thermal coefficient of expansion of metallic plate can satisfy the three kinds of metal materials that have of above requirement as far as possible near the thermal coefficient of expansion of chip, and one is molybdenum, and it two is copper-molybdenum and copper-tungsten alloy.The thickness of base plate can be chosen in 1.0 millimeters to 5.0 millimeters scope.Described the first and second conductive layers adopt the material identical with described metallic plate.Described the first and second conductive layer thickness can be chosen in 0.5 millimeter to 3.0 millimeters scope, are preferably 0.5 millimeter to 1.5 millimeters.
As further improvement of the utility model, for convenient welding, described metal sheet surface is coated with nickel dam or bazar metal layer.
As further improvement of the utility model, described surface electrode is pure copper layer.
In the technique scheme, described base plate can also be ceramic copper-clad base plate, and described ceramic copper-clad base plate is comprised of stacked from top to bottom upper surface copper layer, ceramic insulating layer and surface copper layer.
As further improvement of the utility model, the thickness of described ceramic insulating layer is chosen according to requirement of withstand voltage, and material can adopt insulation and good aluminium oxide, aluminium nitride or the silicon nitride of thermal conductivity.The ceramic insulation layer thickness may be selected between the 0.3mm to 3mm.
As further improvement of the utility model, the space between described igbt chip and described FWD chip is filled with insulating material.By the can insulating material, for example epoxy resin further reduces die stress, improves the dielectric voltage withstand ability of power cell.
As further improvement of the utility model, the periphery of described ceramic copper-clad base plate extends the ceramic insulating layer of one fixed width, and after processing through insulating encapsulating material, this part ceramic material can the enough creepage distances in guaranteed output unit.
The beneficial effects of the utility model are, igbt chip is connected connection and is adopted laminated structure with the FWD chip, have better heat conductivility, can two-side radiation, and compact conformation, can obtain higher power density.
Description of drawings
Fig. 1 is a kind of circuit structure diagram of IGBT power model;
Fig. 2 is the another kind of circuit structure diagram of IGBT power model;
Fig. 3 is the IGBT power model structural representation of the utility model embodiment 1;
Fig. 4 is the IGBT power model structural representation of the utility model embodiment 2;
Fig. 5 is the IGBT power model Facad structure schematic diagram of the utility model embodiment 2;
Fig. 6 is the cutaway view of the IGBT power model of the utility model embodiment 2.
Embodiment
Be described further below in conjunction with embodiment.
Embodiment 1
As shown in Figure 3, a kind of IGBT power model, by base plate 1, igbt chip 3 and FWD chip 4 form, the collector electrode 31 of igbt chip 3 reverse side and the negative electrode 41 of igbt chip reverse side are connected in respectively the upper surface of base plate 1 by the first solder layer 51, the emitter 16 in igbt chip front is connected with the first conductive layer 61 by the second solder layer 52, the anode 15 of FWD chip front side is connected with the second conductive layer 62 by the second solder layer 52, igbt chip 3, the stack height of the second solder layer 52 and the first conductive layer 61, with FWD chip 4, the second solder layer 52 is identical with the stack height of the second conductive layer 62, emitter surface electrode 17 is connected in the first and second conductive layers 61 by the 3rd weld layer 53, on 62, and with the first conductive layer 61, the second conductive layer 62, outside signal terminal and power terminal link together.15 is the articulamentum of IGBT grid.
Base plate 1 is metallic plate, on base plate 1, mounts simultaneously igbt chip 3 and FWD chip 4.Because the vertical conduction of power chip electric current, base plate 1 must have good conductivity.And, as one of main thoroughfare of dispelling the heat, require base plate 1 to have simultaneously good heat conductivility.And, in order to reduce the residual stress of the first solder layer 51, improving the fatigue life of module, the thermal coefficient of expansion of base plate 1 must be as far as possible near chip.Can satisfy the two kinds of metal materials that have of above requirement, one is molybdenum, and it two is copper-molybdenum and copper-tungsten alloy.In this two classes alloy, the percentage by weight of copper should be controlled at 20% to 40%.Like this, when taking into account conduction, thermal conduction characteristic, the content of tungsten and molybdenum can effectively be controlled the thermal coefficient of expansion of base plate, prolongs the chip soldering bed of material purpose of fatigue life thereby reach.The thickness of base plate can be chosen in 1.0 millimeters to 5.0 millimeters scope.For convenient welding, this type of baseboard material must carry out Nickel Plating Treatment usually.Igbt chip 3 and FWD chip 4 fronts are welded simultaneously the first and second conductive layers 61,62, the first and second conductive layers 61,62 and are adopted the metal similar with base plate 1, and the first and second conductive layers 61,62 thickness can be chosen in 0.5 millimeter to 1.5 millimeters scope.Because the difference in thickness of igbt chip 3 and FWD chip 4, the value of the first and second conductive layers 61,62 thickness, welding is finished after, the upper surface of igbt chip 3 and FWD chip 4 is in sustained height., by the 3rd solder layer 53 igbt chip 3 and FWD chip are linked together by emitter surface electrode 17.Emitter surface electrode 17 can adopt pure copper material, and according to size and the thickness of power chip, the thickness of pure copper layer can be controlled at 0.25 millimeter to 1.0 millimeters scope.
Embodiment 2
As shown in Figure 4, present embodiment and upper example are basic identical, and difference is:
Base plate 1 adopts ceramic copper-clad base plate, and ceramic copper-clad base plate is comprised of stacked from top to bottom upper surface copper layer 12, ceramic insulating layer 11 and lower surface copper layer 10.The mounting structure of igbt chip 3 and FWD chip 4 is identical with upper example.Upper surface copper layer 12 and emitter surface electrode 17 all adopt high conductive material, for example, and fine copper.The grid 15 of IGBT is drawn from a side of unit.Igbt chip 3 and FWD chip 4 fronts are welded the high conductive material that the first and second conductive layers 61,62, the first and second conductive layers 61,62 employings and thermal coefficient of expansion and silicon approach, for example molybdenum, molybdenum-copper or tungsten-copper alloy simultaneously.The first and second conductive layers 61,62 thickness can be chosen in 0.5 millimeter to 1.5 millimeters scope, and the selection of each layer thickness is identical with upper example.The thickness of ceramic insulating layer 11 must be chosen according to requirement of withstand voltage, and material can adopt insulation and good aluminium oxide, aluminium nitride or the silicon nitride of thermal conductivity.Ceramic material thickness may be selected between the 0.3mm to 3mm.IGBT collector electrode 31 is drawn collector electrode 19 from base plate 1, and collector electrode 19 comprises the 3rd conductive layer 63 and collector electrode surface electrode 16.The emitter extraction electrode 14 of igbt chip comprises that the 4th conductive layer 64 and emitter surface electrode 17, the four conductive layers 64 bottom surfaces are connected on the DBC substrate 1 among the figure, and the end face of the 4th conductive layer 64 is connected connection with the emitter surface electrode.Emitter extraction electrode 14 can adopt the high conductive material identical with the first conductive layer 61.When adopting compression bonding method to connect the IGBT module, increase the stress that IGBT emitter extraction electrode 14 can effectively reduce later IGBT and FWD chip surface.
The front of IGBT power model as shown in Figure 5.The IGBT power model adopts the bottom insulation structure, and planar dimension 36mm x 34mm disregards signal terminal and connects height, and element thickness only is 2.5mm, as shown in Figure 6.The IGBT power model adopts multi-chip in parallel, rated voltage 1200V, and output-current rating reaches 400A.The periphery of ceramic copper-clad base plate extends the ceramic insulating layer 11 of one fixed width, and the size of the emitter 32 of power model is less than the Outside Dimensions of ceramic ceramic layer 11.Therefore, the periphery of whole IGBT power model is ceramic insulating layer 11, so that enough creepage distances to be provided.The upper and lower surface of IGBT power model is thermally conductive pathways, can reduce by two-side radiation the junction temperature of IGBT, FWD tube core; The upper surface of power cell is current path simultaneously: the space between igbt chip 3 and FWD chip 4, can be by embedding insulating material 18, and for example epoxy resin further reduces die stress, improves the dielectric voltage withstand ability of power cell.

Claims (10)

1. IGBT power model, by base plate, igbt chip and FWD chip form, it is characterized in that, the negative electrode of the collector electrode of described igbt chip reverse side and described igbt chip reverse side is connected in respectively the upper surface of described base plate by the first solder layer, the emitter in described igbt chip front is connected with the first conductive layer by the second solder layer, the anode of FWD chip front side is connected with the second conductive layer by the second solder layer, described igbt chip, the stack height of the second solder layer and the first conductive layer, with described FWD chip, the second solder layer is identical with the stack height of the second conductive layer, the emitter surface electrode passes through on the connection of the 3rd weld layer and described the first and second conductive layers, and with described first, the second conductive layer and outside signal terminal and power terminal link together.
2. IGBT power model according to claim 1 is characterized in that, described base plate is metallic plate, and the thermal coefficient of expansion of described metallic plate is near the thermal coefficient of expansion of chip, and the thickness of metallic plate is chosen in 1.0 millimeters to 5.0 millimeters the scope.
3. IGBT power model according to claim 1, it is characterized in that, described base plate is ceramic copper-clad base plate, and described ceramic copper-clad base plate is comprised of stacked from top to bottom upper surface copper layer, ceramic insulating layer and surface copper layer, and described ceramic insulation layer thickness is selected between the 0.3mm to 3mm.
4. IGBT power model according to claim 1 is characterized in that, described emitter surface electrode is pure copper layer; Described the first and second conductive layer thickness are chosen in 0.5 millimeter to 3.0 millimeters scope.
5. IGBT power model according to claim 1 is characterized in that, the space between described igbt chip and described FWD chip is filled with insulating material.
6. IGBT power model according to claim 2 is characterized in that, the material of described metallic plate is molybdenum or copper-molybdenum alloy or copper-tungsten alloy, and described metal sheet surface is coated with nickel dam or bazar metal layer.
7. IGBT power model according to claim 2 is characterized in that, described the first and second conductive layers adopt the material identical with described metallic plate.
8. IGBT power model according to claim 3 is characterized in that, the material of described ceramic insulating layer is aluminium oxide, aluminium nitride or silicon nitride, the high conductive material that described the first and second conductive layers adopt thermal coefficient of expansion and silicon to approach.
9. IGBT power model according to claim 3, it is characterized in that, described igbt chip also is provided with the emitter extraction electrode, and emitter extraction electrode bottom surface is connected on the basic ceramic copper-clad plate, the end face of described emitter extraction electrode be connected the emitter surface electrode and connect.
10. IGBT power model according to claim 3 is characterized in that, the periphery of described ceramic copper-clad base plate extends the ceramic insulating layer of one fixed width.
CN2012202866151U 2012-06-18 2012-06-18 Insulated gate bipolar transistor (IGBT) power module Expired - Fee Related CN202695428U (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102693969A (en) * 2012-06-18 2012-09-26 南京银茂微电子制造有限公司 Insulated gate bipolar translator (IGBT) power module
CN103515365A (en) * 2013-10-14 2014-01-15 国家电网公司 Large power crimping type IGBT device
CN105590930A (en) * 2016-02-02 2016-05-18 中国第一汽车股份有限公司 IGBT power module used for new energy vehicle
CN105609440A (en) * 2014-11-18 2016-05-25 富士电机株式会社 Method for manufacturing power semiconductor module and intermediate assembly unit of the same
CN107768340A (en) * 2017-09-14 2018-03-06 株洲中车时代电气股份有限公司 A kind of power model ceramic lining plate
CN107851631A (en) * 2015-07-29 2018-03-27 松下知识产权经营株式会社 Semiconductor device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102693969A (en) * 2012-06-18 2012-09-26 南京银茂微电子制造有限公司 Insulated gate bipolar translator (IGBT) power module
CN102693969B (en) * 2012-06-18 2014-12-24 南京银茂微电子制造有限公司 Insulated gate bipolar translator (IGBT) power module
CN103515365A (en) * 2013-10-14 2014-01-15 国家电网公司 Large power crimping type IGBT device
CN103515365B (en) * 2013-10-14 2016-04-20 国家电网公司 A kind of high-power compression joint type IGBT device
CN105609440B (en) * 2014-11-18 2021-04-13 富士电机株式会社 Method for producing power semiconductor module and intermediate assembly unit therefor
CN105609440A (en) * 2014-11-18 2016-05-25 富士电机株式会社 Method for manufacturing power semiconductor module and intermediate assembly unit of the same
EP3331006A4 (en) * 2015-07-29 2018-08-22 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device
CN107851631A (en) * 2015-07-29 2018-03-27 松下知识产权经营株式会社 Semiconductor device
US10211144B2 (en) 2015-07-29 2019-02-19 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device having a plurality of top surface connection terminals
CN107851631B (en) * 2015-07-29 2021-04-02 松下知识产权经营株式会社 Semiconductor device with a plurality of semiconductor chips
CN105590930B (en) * 2016-02-02 2018-05-08 中国第一汽车股份有限公司 A kind of used in new energy vehicles IGBT power module
CN105590930A (en) * 2016-02-02 2016-05-18 中国第一汽车股份有限公司 IGBT power module used for new energy vehicle
CN107768340A (en) * 2017-09-14 2018-03-06 株洲中车时代电气股份有限公司 A kind of power model ceramic lining plate
CN107768340B (en) * 2017-09-14 2019-12-06 株洲中车时代电气股份有限公司 Ceramic lining plate of power module

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