CN209592027U - A kind of two-sided cooling structure of SiC module - Google Patents

Abstract

The utility model relates to a kind of two-sided cooling structures of SiC module, including DBC board group, the power terminal O being set in DBC board group, power terminal P, power terminal N, SiC mosfet M1, SiC mosfet M2, DBC board group includes lower DBC plate, middle DBC plate and upper DBC plate, the SiC mosfet M1, SiC mosfet M2 is respectively arranged on lower DBC plate and is provided with nano silver sinter layer between lower DBC plate, the source S 1 of SiC mosfet M1, grid G 1 is set up, the source S 2 of SiC mosfet M2, grid G 2 is down-set, middle DBC plate is set to above SiC mosfet M1 and SiC mo Source S 1, the grid G 1 of sfet M1 connects, and SiC mosfet M1, SiC mosfet M2 are connect by sheet metal with upper DBC plate respectively, and the structure good heat dissipation, parasitic inductance are low, small in size and high reliablity.

Description

A kind of two-sided cooling structure of SiC module

Technical field

The utility model belongs to the technical field more particularly to a kind of two-sided cooling of SiC module of power semiconductor package Structure.

Background technique

For power module as one of device most common in power electronics, reliability and safety are extremely important, positive court More compact, cleaning, reliable, efficient direction develop.Reach these targets, need to just improve material, the technique of electronic device With optimization topological structure.SiC mosfet is due to having many advantages, such as low loss characteristic and high switching frequency, transfer efficiency ratio Si Device is higher, and therefore, the SiC power module that practical SiC mosfet and SBD is packaged into is receive more and more attention.

SiC mosfet ratio Si mosfet is more suitably applied to high-temperature work environment, and reason is one side SiC Mosfet own loss is small, and calorific value is small, itself heating is relatively small, on the other hand, the thermal conductivity and Si of SiC mosfet Mosfet is compared to 3 times high.

Lightness and miniaturization will lead to other problems, and with the increase of current density, the heat of inside modules is not easy It sheds, junction temperature is caused to increase, higher temperature will lead to the reliability of inverter, therefore, in the application of SiC, how small Preferably solve the problems, such as that heat dissipation problem is that researcher requires one considered in the design of type.

Summary of the invention

In view of the deficiencies of the prior art, the utility model provides a kind of two-sided cooling structure of SiC module, which dissipates Heat is good, parasitic inductance is low, small in size and high reliablity.

The technical solution adopted in the utility model is:

A kind of two-sided cooling structure of SiC module, including DBC board group, the power terminal O, the power that are set in DBC board group Terminals P, power terminal N, SiC mosfet M1, SiC mosfet M2, it is critical that the DBC board group includes lower DBC Plate, middle DBC plate and upper DBC plate, the SiC mosfet M1, SiC mosfet M2 are respectively arranged on lower DBC plate and under Nano silver sinter layer is provided between DBC plate, source S 1, the grid G 1 of the SiC mosfet M1 is set up, SiC Source S 2, the grid G 2 of mosfet M2 is down-set, and middle DBC plate is set to above SiC mosfet M1 and SiC mosfet The source S 1 of M1, grid G 1 connect, the SiC mosfet M1, SiC mosfet M2 respectively by sheet metal with it is upper The connection of DBC plate.

Power terminal P, power terminal N are respectively arranged on lower DBC plate and are provided with nano silver burning between lower DBC plate It ties layer, is provided with nano silver sinter layer in the described power terminal O setting and upper DBC plate and between upper DBC plate.

The lower end of the middle DBC plate is provided with layers of copper.

Epoxy resin filled layer is provided between the lower DBC plate and upper DBC plate.

The beneficial effects of the utility model are: being additionally arranged DBC plate, the effect of two-side radiation, cooling, SiC are realized Mosfet M1, SiC mosfet M2 are welded on lower DBC plate 1 by nano silver respectively, are sintered by nano silver instead of bonding Aluminum steel can reduce parasitic inductance, and nano silver sintering substitution tin cream welding, improve the reliability of solder joint, it is disconnected avoid solder joint The case where leading to product actual effect is split, the volume of module has been further reduced, has realized lightness and miniaturization.

Detailed description of the invention

Fig. 1 is the structural schematic diagram of the utility model.

Fig. 2 is the structural schematic diagram after the utility model opens upper DBC plate.

Fig. 3 is that the position of the electrode of the utility model corresponds to schematic diagram.

In attached drawing, 1, lower DBC plate, 2, middle DBC plate, 3, upper DBC plate, 4, sheet metal, 5, signal terminal.

Specific embodiment

The utility model relates to a kind of two-sided cooling structures of SiC module, including DBC board group, are set in DBC board group Power terminal O, power terminal P, power terminal N, SiC mosfet M1, SiC mosfet M2, it is important to, the DBC plate Group includes lower DBC plate 1, middle DBC plate 2 and upper DBC plate 3, and the SiC mosfet M1, SiC mosfet M2 are respectively arranged at down Nano silver sinter layer, source S 1, the grid G 1 of the SiC mosfet M1 are provided on DBC plate 1 and between lower DBC plate 1 It sets up, source S 2, the grid G 2 of SiC mosfet M2 is down-set, and middle DBC plate 2 is set to above SiC mosfet M1 Connect with the source S 1 of SiC mosfet M1, grid G 1, the SiC mosfet M1, SiC mosfet M2 respectively by Sheet metal 4 is connect with upper DBC plate 3.

With reference to the accompanying drawing and specific embodiment the utility model is described in further detail.

Specific embodiment, as shown in Figure 1-3, SiC SBD D1, SiC are welded with by nano silver sinter layer on lower DBC plate 1 SBD D2, SiC SBD D1, SiC SBD D2 are connect by sheet metal 4 with upper DBC plate 3 respectively.

SiC mosfet M2 is by way of flip-chip, using nano silver sintering on lower DBC plate 1, source S 2, Grid G 2 is down-set and is drawn by the layers of copper on lower DBC plate 1, and the layers of copper on lower DBC plate 1 is disposed thereon surface, realizes The source S 2 of SiC mosfet M2, grid G 2 without aluminum wire bonding, reduce parasitic inductance.

SiC mosfet M1 is welded on lower DBC plate 1, source with normal welding manner by nano silver sintering technology Pole S1, grid G 1 are set up, and the lower end of middle DBC plate 2 is provided with layers of copper, and middle DBC plate 2 and SiC mosfet M1 is by nanometer Silver-colored sintering technology welds together, and SiC mosfet M1 draws source S 1, grid G 1 by the layers of copper of middle 2 bottom of DBC plate.

Source S 1, grid G 1, source S 2, grid G 2 draw module by signal terminal 5 respectively.

SiC mosfet M1, SiC mosfet M2, SiC SBD D1, SiC SBD D2 respectively by sheet metal 4 with Upper DBC plate 3 connects, sheet metal 4 realize DBC plate 3 and SiC mosfet M1, SiC mosfet M2, SiC SBD D1, Gap in electrical connection, increase between SiC SBD D2 between DBC plate 3, lower DBC1 plate, fills epoxy resin smoothly. The method that SiC mosfet M1 uses normal weld, can by sheet metal between SiC mosfet M1 and upper DBC plate, Sheet metal between upper DBC plate, upper DBC plate and SiC mosfet M2 realizes the source S 1 and SiC of SiC mosfet M1 Electrical connection between the drain electrode of mosfet M2.

Power terminal P, power terminal N are respectively arranged on lower DBC plate 1 and are provided with nano silver between lower DBC plate 1 Sinter layer in power terminal O setting and upper DBC plate 3 and between upper DBC plate 3 is provided with nano silver sinter layer, wherein power end Sub- O is output terminal, and power terminal P, power terminal N are input terminal, the setting avoid power terminal O and power terminal P, Occur the situation of short circuit between power terminal N, while reducing current path, reduces parasitic inductance.

Epoxy resin filling layer is filled between lower DBC plate 1 and upper DBC plate 3, due to the setting of sheet metal 4, so that ring Oxygen resin can be uniformly filled in the gap between DBC plate 3, lower DBC plate 2, and epoxy resin filled layer avoids SiC Mosfet M1, SiC mosfet M2, SiC SBD D1, SiC SBD D2 are contacted with air, play the work of insulation, protection With.

The utility model relates to a kind of SiC module two-sided cooling structure, being additionally arranged DBC plate realizes the double of module Face is cooling, improves the radiating efficiency of module, using the welding manner leading-out terminal of flip-chip, avoids making for bonding wire With improving the reliability of module, and due to the shortening of circuit paths, effectively reduce parasitic inductance, the body after module encapsulation Product is small, realizes the lightness of circuit.

Claims (4)

1. a kind of two-sided cooling structure of SiC module, including DBC board group, the power terminal O, the power end that are set in DBC board group Sub- P, power terminal N, SiC mosfet M1, SiC mosfet M2, it is characterised in that: the DBC board group includes lower DBC plate (1), middle DBC plate (2) and upper DBC plate (3), the SiC mosfet M1, SiC mosfet M2 are respectively arranged at lower DBC plate (1) nano silver sinter layer, source S 1, the grid G 1 of the SiC mosfet M1 are provided on and between lower DBC plate (1) It sets up, source S 2, the grid G 2 of SiC mosfet M2 is down-set, and middle DBC plate (2) is set on SiC mosfet M1 Side is connect with the source S 1 of SiC mosfet M1, grid G 1, and the SiC mosfet M1, SiC mosfet M2 are borrowed respectively Aided metal thin slice (4) is connect with upper DBC plate (3).

2. a kind of two-sided cooling structure of SiC module according to claim 1, it is characterised in that: power terminal P, power Terminal N is respectively arranged on lower DBC plate (1) and is provided with nano silver sinter layer, the power end between lower DBC plate (1) Nano silver sinter layer is provided in sub- O setting and upper DBC plate (3) and between upper DBC plate (3).

3. a kind of two-sided cooling structure of SiC module according to claim 1, it is characterised in that: the middle DBC plate (2) lower end is provided with layers of copper.

4. a kind of two-sided cooling structure of SiC module according to claim 1, it is characterised in that: the lower DBC plate (1) epoxy resin filled layer is provided between upper DBC plate (3).