CN107170720A - A kind of stacked package two-side radiation power model - Google Patents
A kind of stacked package two-side radiation power model Download PDFInfo
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- CN107170720A CN107170720A CN201710448925.6A CN201710448925A CN107170720A CN 107170720 A CN107170720 A CN 107170720A CN 201710448925 A CN201710448925 A CN 201710448925A CN 107170720 A CN107170720 A CN 107170720A
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- 230000005855 radiation Effects 0.000 title claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 177
- 239000002184 metal Substances 0.000 claims abstract description 177
- 239000000758 substrate Substances 0.000 claims abstract description 127
- 238000005245 sintering Methods 0.000 claims abstract description 28
- 238000003475 lamination Methods 0.000 claims abstract description 14
- 238000009413 insulation Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 abstract description 3
- 239000012212 insulator Substances 0.000 description 6
- 238000003466 welding Methods 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- UIFOTCALDQIDTI-UHFFFAOYSA-N arsanylidynenickel Chemical compound [As]#[Ni] UIFOTCALDQIDTI-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 238000004021 metal welding Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/06181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Conversion In General (AREA)
Abstract
The invention discloses a kind of stacked package two-side radiation power model, including input power terminal, power output terminal, top metal insulated substrate, bottom metal insulated substrate, the input power terminal includes positive pole power terminal and negative pole power terminal, top metal insulated substrate and bottom metal insulated substrate lamination are set, sintering has chip on the two relative face for top metal insulated substrate and bottom metal insulated substrate, input power terminal, power output terminal is electrically connected with chip, the power output terminal is arranged between the chip sintered on top metal insulated substrate and the chip sintered on bottom metal insulated substrate.The present invention can reduce loop stray inductance, reduce the volume of power model, saved cost, alleviate weight, be especially suitable for the encapsulation of SiC power chips；The thermal resistance of power model can be reduced simultaneously, the radiating efficiency of power model is improved, and improve the reliability of module.
Description
Technical field
The present invention relates to electric and electronic power module, especially a kind of stacked package two-side radiation power model.
Background technology
Power Electronic Technique occupies very important status, electric and electronic power mould in current fast-developing industrial circle
Block is widely used to electric automobile as the representative of Power Electronic Technique, and photovoltaic generation, wind-power electricity generation, industrial frequency conversion etc. is gone
Industry.With the emergence of China's industry, electric and electronic power module has more wide market prospects.
Existing electric and electronic power module encapsulation volume is big, and weight weight does not meet the fields such as electric automobile, Aero-Space
High power density, light-weighted requirement.The larger electric and electronic power module of volume, its stray inductance often also than larger, this
It can cause that overshoot voltage is larger, loss increase, and also limit the application in high switching frequency occasion.SiC power electronics devices
Part has high frequency, high temperature, efficient characteristic, but the stray inductance of existing power model is larger, limits the performance of SiC performances.
In addition, with the continuous upgrading of application end power density, the encapsulating structure of existing power model has hindered power density
Further lifting, it is necessary to which the growing demand of power density could be met by developing significantly more efficient radiator structure.
Existing two-side radiation power model such as CN105161477A, because chip individual layer is set, the commutation circuit of electric current
Area is still larger, and often stray inductance is also than larger, and chip individual layer is set so that the volume of power model is relatively
Greatly, power terminal is only connected with control terminal with the first liner plate in addition, sets underaction, liner plate area not to subtract further
It is small, it can also cause loss to increase because current path is longer.
The content of the invention
Goal of the invention：In view of the above-mentioned drawbacks of the prior art, the present invention is intended to provide a kind of small volume, it is lightweight,
The small stacked package two-side radiation power model of stray inductance.
Technical scheme：A kind of stacked package two-side radiation power model, including input power terminal, power output terminal,
Top metal insulated substrate, bottom metal insulated substrate, the input power terminal include positive pole power terminal and negative pole power
Terminal, top metal insulated substrate and bottom metal insulated substrate lamination are set, and top metal insulated substrate and bottom metal are exhausted
Sintering has chip to edge substrate on the two relative face, and the positive pole power terminal and negative pole power terminal and top metal are exhausted
Edge substrate and bottom metal insulated substrate are electrically connected, and power output terminal includes weld part and the company outside plastic shell
Socket part, weld part be arranged on the chip sintered on top metal insulated substrate and the chip sintered on bottom metal insulated substrate it
Between and electrically connected with chip.
Further, the chip sintered on the top metal insulated substrate is lower half-bridge diode chip for backlight unit and upper half-bridge two
The chip sintered on pole pipe chip, bottom metal insulated substrate be lower half-bridge switch chip and upper half-bridge switch chip, wherein, under
Half-bridge diode chip for backlight unit is set with lower half-bridge switch chip-stack, and upper half-bridge diode chip for backlight unit is set with upper half-bridge switch chip-stack
Put.
Further, the chip sintered on top metal insulated substrate is upper half-bridge switch chip and upper half-bridge diode core
The chip sintered on piece, bottom metal insulated substrate be lower half-bridge switch chip and lower half-bridge diode chip for backlight unit, wherein, upper half-bridge
Switch chip is set with lower half-bridge diode chip for backlight unit lamination, and upper half-bridge diode chip for backlight unit is set with lower half-bridge switch chip-stack.
Further, the positive pole power terminal and negative pole power terminal are sintered on top metal insulated substrate, and
And at least one input power terminal is connected with bottom metal insulated substrate by metal connecting pole；Or, positive pole power terminal
It is sintered on bottom metal insulated substrate with negative pole power terminal, and passes through metal connecting pole phase with top metal insulated substrate
Even；Or, positive pole power terminal and negative pole power terminal are sintered with top metal insulated substrate and bottom metal insulated substrate.
Further, the top metal insulated substrate includes the top metal insulation base electrically connected with positive pole power terminal
Plate cathode metal layer, the top metal insulated substrate negative metal layer electrically connected with negative pole power terminal and power output terminal
The upper half-bridge switch chip emission pole electrically connected with a upper half-bridge drive terminal/source electrode localized metallic layer, and and another
The upper half-bridge switch chip gate pole localized metallic layer of upper half-bridge drive terminal electrical connection；
The surface sintering of top metal insulated substrate cathode metal layer has upper half-bridge diode chip for backlight unit, top metal insulation base
The surface sintering of plate negative metal layer has lower half-bridge diode chip for backlight unit, upper half-bridge switch chip gate pole localized metallic layer and upper half-bridge
The gate pole electrical connection of switch chip.
Further, the bottom metal insulated substrate includes the bottom metal insulation base electrically connected with positive pole power terminal
Plate cathode metal layer, the bottom metal insulated substrate negative pole gold electrically connected with negative pole power terminal and a lower half-bridge drive terminal
Belong to layer, and the lower half-bridge switch chip gate pole localized metallic layer electrically connected with another lower half-bridge drive terminal；
The surface sintering of bottom metal insulated substrate cathode metal layer has upper half-bridge switch chip, bottom metal insulated substrate
Negative metal layer surface sintering has lower half-bridge switch chip；Lower half-bridge switch chip gate pole localized metallic layer and lower half-bridge switch core
The gate pole electrical connection of piece.
Further, the power output terminal also includes upper half-bridge exit, the weld part and upper half-bridge switch core
The connection of emitter stage or source electrode, the colelctor electrode with lower half-bridge switch chip or the drain electrode of piece are connected and upper half-bridge diode chip for backlight unit
Positive pole is connected, is connected with the negative pole of lower half-bridge diode chip for backlight unit；The upper half-bridge of upper half-bridge exit and top metal insulated substrate
Switch chip emitter stage/source electrode localized metallic layer connection.
Further, the emitter stage/source electrode and lower half of the weld part of the power output terminal and upper half-bridge switch chip
Between the negative pole of the positive pole and lower half-bridge diode chip for backlight unit of the collector of bridge switch chip and upper half-bridge diode chip for backlight unit
It is equipped with stress-buffer layer.
Further, the plastic shell makes for transmission mould integrated forming technique, the top metal insulated substrate back side
The center section of metal level upper surface and the center section of bottom metal insulated substrate metal layer on back lower surface are exposed independent from
The outside of plastic shell, and it is higher by plastic shell.
Further, the plastic shell is carried on the back in top metal insulated substrate metal layer on back and bottom metal insulated substrate
The both sides of face metal level are equipped with heat sink.
Beneficial effect：The top metal insulated substrate of the present invention is set with bottom metal insulated substrate lamination, positive pole power
Terminal, negative pole power terminal and power output terminal are sintered in top metal insulated substrate and bottom gold as layer structure
Belong between insulated substrate, loop stray inductance can be substantially reduced, and there is stacked relation between segment chip, reduce work(
The volume of rate module, has saved cost, alleviates weight, is especially suitable for the encapsulation of SiC power chips；Meanwhile, power model
Both sides can be set heat sink, can reduce the thermal resistance of power model, improve the radiating efficiency of power model；Also, power model
The power end of inside chip is all using large area sintering structure, and inside substantially increases conveyance capacity, improved without bonding line
The reliability of module.
Brief description of the drawings
Fig. 1 is stacked package two-side radiation power model schematic internal view of the present invention；
Fig. 2 is power model schematic appearance of the present invention；
Fig. 3 is power model side view of the present invention；
Fig. 4 is power model schematic internal view of the present invention；
Fig. 5 is the power model assembling explosive view of the present invention；
Fig. 6 is the top metal insulated substrate structural representation of the present invention；
Fig. 7 is the bottom metal insulated substrate structural representation of the present invention；
Fig. 8 is the power output terminal structure schematic diagram of the present invention.
Embodiment
The technical program is described in detail below by embodiment and with reference to accompanying drawing.
Embodiment 1：
The present invention by by switch chip and fly-wheel diode it is chip-stacked set, reduce power module package volume,
So as to reduce loop stray inductance；By setting the both sides of chip to set thermal dissipating path in lamination, the purpose of two-side radiation is reached,
The thermal resistance of power model can further be reduced.
As shown in figure 1, a kind of stacked package two-side radiation power model, including it is plastic shell 13, input power terminal, defeated
Go out power terminal 3, top metal insulated substrate 4, bottom metal insulated substrate 5, the input power terminal includes positive pole power
Terminal 1 and negative pole power terminal 2, top metal insulated substrate 4 and the lamination of bottom metal insulated substrate 5 are set, and top metal is exhausted
Sintering has chip, input power terminal, power output to edge substrate 4 on the two relative face with bottom metal insulated substrate 5
Terminal 3 is electrically connected with chip, the positive pole power terminal 1 and negative pole power terminal 2 and top metal insulated substrate 4 or/and bottom
Portion's metal-insulator substrate 5 is connected, and power output terminal 3 includes weld part 31 and the connecting portion 32 outside plastic shell 13,
Weld part 31 be arranged on the chip sintered on top metal insulated substrate 4 and the chip sintered on bottom metal insulated substrate 5 it
Between and electrically connected with chip；Specifically, positive pole power terminal 1 and negative pole power terminal 2 are sintered in top metal insulated substrate 4
On, and at least one input power terminal is connected with bottom metal insulated substrate 5 by metal connecting pole；
Or, positive pole power terminal 1 and negative pole power terminal 2 are sintered on bottom metal insulated substrate 5, and with top
Metal-insulator substrate 4 is connected by metal connecting pole；
Or, positive pole power terminal 1 and negative pole power terminal 2 and top metal insulated substrate 4 and bottom metal insulation base
Plate 5 is sintered.
The metal-insulator substrate that top metal insulated substrate 4, bottom metal insulated substrate 5 are used in the present embodiment is
DBC, i.e., the metal level including insulated substrate and substrate both sides, top metal insulated substrate 4 is relative with bottom metal insulated substrate 5
One side on be mounted with chip, the another side of non-chip is respectively then top metal insulated substrate metal layer on back 41, bottom
Portion's metal-insulator substrate back metal level 51；Those skilled in the art can not also use DBC structures when implementing, it would however also be possible to employ
Aluminium is covered in insulated substrate both sides, or the structure that the metals such as aluminium are covered in dielectric both sides is covered in side Fu Tong sides；
Plastic shell 13 is in top metal insulated substrate metal layer on back 41 and bottom metal insulated substrate metal layer on back
51 both sides are equipped with heat sink 12.
As shown in Figure 2 and Figure 3, plastic shell 13 makes for transmission mould integrated forming technique, the top metal insulated substrate back of the body
The center section of the upper surface of face metal level 41 and the center section of the lower surface of bottom metal insulated substrate metal layer on back 51 are equal
Expose in the outside of plastic shell 13, and be higher by plastic shell 13, this structure can make metal-insulator substrate back metal
Layer is preferably contacted with heat abstractor, it is possible to achieve more preferable radiating effect.
As shown in Figure 4, Figure 5, the chip sintered on top metal insulated substrate 4 is lower half-bridge diode chip for backlight unit 9 and upper half
The chip sintered on bridge diode chip for backlight unit 7, bottom metal insulated substrate 5 is lower half-bridge switch chip 8 and upper half-bridge switch chip
6, wherein, lower half-bridge diode chip for backlight unit 9 is set with the lower lamination of half-bridge switch chip 8, and upper half-bridge diode chip for backlight unit 7 is opened with upper half-bridge
The lamination of chip 6 is closed to set；In addition, the sintering described in the present embodiment is sintered specifically by weld layer 16, due to chip both sides
There is upper surface lower surface titanium nickeline metal structure by electroplating or sputtering or evaporate, therefore weld layer 16 can be tin-lead etc.
Cored solder is by sintering the weld layer 16 formed or silver paste by sintering the weld layer 16 formed.
As shown in fig. 6, top metal insulated substrate 4 includes welding by sintering or ultrasonic wave metal with positive pole power terminal 1
The mode connect realizes the top metal insulated substrate cathode metal layer 421 of electrical connection, the side for passing through sintering with negative pole power terminal 2
Formula realizes the top metal insulated substrate negative metal layer 422 and power output terminal 3 and a upper half-bridge drive end of electrical connection
The upper half-bridge switch chip emission pole of son electrical connection/source electrode localized metallic layer 423, and it is electric with half-bridge drive terminal on another
The upper half-bridge switch chip gate pole localized metallic layer 424 of connection；
The surface sintering of top metal insulated substrate cathode metal layer 421 has upper half-bridge diode chip for backlight unit 7, and and upper half
The negative pole of bridge diode chip for backlight unit 7 is relative, and the surface sintering of top metal insulated substrate negative metal layer 422 has lower half-bridge diode
Chip 9, and, upper half-bridge switch chip gate pole localized metallic layer 424 and upper half relative with the positive pole of lower half-bridge diode chip for backlight unit 9
The gate pole electrical connection of bridge switch chip 6.
As shown in fig. 7, bottom metal insulated substrate 5 includes welding by sintering or ultrasonic wave metal with positive pole power terminal 1
The mode connect realizes the bottom metal insulated substrate cathode metal layer 521 and negative pole power terminal 2 and a lower half-bridge of electrical connection
The bottom metal insulated substrate negative metal layer 522 of drive terminal electrical connection, and be electrically connected with another lower half-bridge drive terminal
The lower half-bridge switch chip gate pole localized metallic layer 523 connect；Positive pole power terminal 1, negative pole power terminal 2 can by sintering or
The mode of ultrasonic wave metal welding is respectively connecting to bottom metal insulated substrate cathode metal layer 521 and bottom metal insulated substrate
Negative metal layer 522；
The surface sintering of bottom metal insulated substrate cathode metal layer 521 has upper half-bridge switch chip 6, and is opened with upper half-bridge
Colelctor electrode or the drain electrode for closing chip 6 are just right, and 522 surface of bottom metal insulated substrate negative metal layer sintering has lower half-bridge switch core
Piece 8, and it is just right with the emitter stage or source electrode of lower half-bridge switch chip 8；Lower half-bridge switch chip gate pole localized metallic layer 523 passes through
The mode of sintering is electrically connected with the gate pole of lower half-bridge switch chip 8.
As shown in figure 8, power output terminal 3 includes the connecting portion 32 provided with connecting hole, the welding for being connected with chip
Portion 31, and upper half-bridge exit 33, the emitter stage or source electrode of the weld part 31 and upper half-bridge switch chip 6 are sintered, when upper
It is emitter stage when half-bridge switch chip 6 is IGBT, is source electrode and lower half-bridge switch when upper half-bridge switch chip 6 is MOSFET
The colelctor electrode or drain electrode sintering of chip 8, are colelctor electrode when half-bridge switch chip 8 is IGBT instantly, half-bridge switch chip 8 is instantly
Positive pole sintering during MOSFET for drain electrode, with upper half-bridge diode chip for backlight unit 7, the negative pole sintering with lower half-bridge diode chip for backlight unit 9, or
Metal stresses cushion is equipped with described in person between weld part 31 and chip, and is connected by the metal stresses cushion.
Embodiment 2：
The present embodiment and the structure of embodiment 1 are essentially identical, and difference is, top metal insulation base in the present embodiment
The chip sintered on plate 4 is what is sintered on upper half-bridge switch chip 6 and upper half-bridge diode chip for backlight unit 7, bottom metal insulated substrate 5
Chip is lower half-bridge switch chip 8 and lower half-bridge diode chip for backlight unit 9, wherein, upper half-bridge switch chip 6 and lower half-bridge diode core
The lamination of piece 9 is set, and upper half-bridge diode chip for backlight unit 7 is set with the lower lamination of half-bridge switch chip 8.
Embodiment 3：
The present embodiment and the structure of embodiment 1 are essentially identical, and difference is, the present embodiment and the top in embodiment 1
Portion's metal-insulator substrate 4 is exchanged with the chip sintered on bottom metal insulated substrate 5, and other structures are according to people in the art
The conventional selection of member makees adaptive improvement.
It the above is only the preferred embodiment of the present invention, it should be pointed out that：Come for those skilled in the art
Say, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. a kind of stacked package two-side radiation power model, it is characterised in that including input power terminal, power output terminal
(3), top metal insulated substrate (4), bottom metal insulated substrate (5) and plastic shell (13), the input power terminal bag
Positive pole power terminal (1) and negative pole power terminal (2) are included, top metal insulated substrate (4) and bottom metal insulated substrate (5) are folded
Layer is set, and sintering has chip on the two relative face for top metal insulated substrate (4) and bottom metal insulated substrate (5),
The positive pole power terminal (1) and negative pole power terminal (2) and top metal insulated substrate (4) and bottom metal insulated substrate
(5) electrically connect, power output terminal (3) includes weld part (31) and positioned at the outside connecting portion (32) of plastic shell (13),
Weld part (31) is arranged on the chip sintered on top metal insulated substrate (4) and sintered on bottom metal insulated substrate (5)
Electrically connected between chip and with chip.
2. stacked package two-side radiation power model according to claim 1, it is characterised in that the top metal insulation
The chip sintered on substrate (4) is lower half-bridge diode chip for backlight unit (9) and upper half-bridge diode chip for backlight unit (7), bottom metal insulation base
The chip sintered on plate (5) be lower half-bridge switch chip (8) and upper half-bridge switch chip (6), wherein, lower half-bridge diode chip for backlight unit
(9) set with lower half-bridge switch chip (8) lamination, upper half-bridge diode chip for backlight unit (7) sets with upper half-bridge switch chip (6) lamination
Put.
3. stacked package two-side radiation power model according to claim 1, it is characterised in that the top metal insulation
The chip sintered on substrate (4) is upper half-bridge switch chip (6) and upper half-bridge diode chip for backlight unit (7), bottom metal insulated substrate
(5) chip sintered on be lower half-bridge switch chip (8) and lower half-bridge diode chip for backlight unit (9), wherein, upper half-bridge switch chip
(6) set with lower half-bridge diode chip for backlight unit (9) lamination, upper half-bridge diode chip for backlight unit (7) sets with lower half-bridge switch chip (8) lamination
Put.
4. stacked package two-side radiation power model according to claim 1, it is characterised in that the positive pole power terminal
(1) be sintered on top metal insulated substrate (4) with negative pole power terminal (2), and at least one input power terminal with
Bottom metal insulated substrate (5) is connected by metal connecting pole；Or, positive pole power terminal (1) and negative pole power terminal (2) are
It is sintered on bottom metal insulated substrate (5), and is connected with top metal insulated substrate (4) by metal connecting pole；Or, just
Pole power terminal (1) and negative pole power terminal (2) burn with top metal insulated substrate (4) and bottom metal insulated substrate (5)
Knot.
5. stacked package two-side radiation power model according to claim 1, it is characterised in that the top metal insulation
Substrate (4) includes the top metal insulated substrate cathode metal layer (421) electrically connected with positive pole power terminal (1) and negative pole work(
The top metal insulated substrate negative metal layer (422) and power output terminal (3) and a upper half of rate terminal (2) electrical connection
The upper half-bridge switch chip emission pole/source electrode localized metallic layer (423) of bridge drive terminal electrical connection, and with half-bridge on another
The upper half-bridge switch chip gate pole localized metallic layer (424) of drive terminal (10) electrical connection；
The surface sintering of top metal insulated substrate cathode metal layer (421) has upper half-bridge diode chip for backlight unit (7), and top metal is exhausted
The surface sintering of edge substrate negative metal layer (422) has lower half-bridge diode chip for backlight unit (9), the local gold of upper half-bridge switch chip gate pole
Category layer (424) is electrically connected with the gate pole of upper half-bridge switch chip (6).
6. stacked package two-side radiation power model according to claim 1, it is characterised in that the bottom metal insulation
Substrate (5) includes the bottom metal insulated substrate cathode metal layer (521) electrically connected with positive pole power terminal (1) and negative pole work(
Rate terminal (2) and the bottom metal insulated substrate negative metal layer (522) of lower half-bridge drive terminal (11) electrical connection, and
The lower half-bridge switch chip gate pole localized metallic layer (523) electrically connected with another lower half-bridge drive terminal；
The surface sintering of bottom metal insulated substrate cathode metal layer (521) has upper half-bridge switch chip (6), bottom metal insulation
Substrate negative metal layer (522) surface sintering has lower half-bridge switch chip (8)；Lower half-bridge switch chip gate pole localized metallic layer
(523) gate pole with lower half-bridge switch chip (8) is electrically connected.
7. stacked package two-side radiation power model according to claim 5, it is characterised in that the power output terminal
(3) upper half-bridge exit (33) is also included, the emitter stage or source electrode of the weld part (31) and upper half-bridge switch chip (6) connect
Connect, the colelctor electrode with lower half-bridge switch chip (8) or drain electrode are connected, are connected with the positive pole of upper half-bridge diode chip for backlight unit (7), with
The negative pole connection of half-bridge diode chip for backlight unit (9)；Upper half-bridge exit (33) and the upper half-bridge switch of top metal insulated substrate (4)
Chip emission pole/source electrode localized metallic layer (423) connection.
8. stacked package two-side radiation power model according to claim 7, it is characterised in that the power output terminal
(3) emitter stage/source electrode of weld part (31) and upper half-bridge switch chip (6), with the colelctor electrode of lower half-bridge switch chip (8)/
Metal is equipped between drain electrode and the positive pole of upper half-bridge diode chip for backlight unit (7) and the negative pole of lower half-bridge diode chip for backlight unit (9) should
Power cushion.
9. stacked package two-side radiation power model according to claim 1, it is characterised in that the plastic shell (13)
For transmission mould integrated forming technique make, the center section of top metal insulated substrate metal layer on back (41) upper surface and
The center section of bottom metal insulated substrate metal layer on back (51) lower surface is exposed independent from the outside of plastic shell (13), and
It is higher by plastic shell (13).
10. stacked package two-side radiation power model according to claim 9, it is characterised in that the plastic shell
(13) it is equal in the both sides of top metal insulated substrate metal layer on back (41) and bottom metal insulated substrate metal layer on back (51)
Provided with heat sink (12).
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| CN201710448925.6A CN107170720A (en) | 2017-06-14 | 2017-06-14 | A kind of stacked package two-side radiation power model |
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| CN201710448925.6A CN107170720A (en) | 2017-06-14 | 2017-06-14 | A kind of stacked package two-side radiation power model |
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| CN107887368A (en) * | 2017-10-13 | 2018-04-06 | 天津大学 | Using the method for the two-sided interconnection silicon substrate IGBT module of low-temperature sintering Nano Silver |
| CN107910324A (en) * | 2017-10-13 | 2018-04-13 | 天津大学 | A kind of modularized encapsulation method based on the two-sided interconnecting silicon carbide MOS device of nano mattisolda |
| CN109768036A (en) * | 2018-10-14 | 2019-05-17 | 深圳市慧成功率电子有限公司 | A kind of power module with reflowing conductive layer |
| CN109920785A (en) * | 2019-03-13 | 2019-06-21 | 黄山学院 | The encapsulating structure and processing technology of two-side radiation IPM mixing module |
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| CN107910324A (en) * | 2017-10-13 | 2018-04-13 | 天津大学 | A kind of modularized encapsulation method based on the two-sided interconnecting silicon carbide MOS device of nano mattisolda |
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| CN114530390A (en) * | 2022-04-22 | 2022-05-24 | 广东气派科技有限公司 | Integrated circuit package for improving stress problem of double-sided heat dissipation device and manufacturing method thereof |
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| CN116230666A (en) * | 2023-05-05 | 2023-06-06 | 烟台台芯电子科技有限公司 | DBC double-sided micro-channel refrigeration IGBT module and manufacturing method thereof |
| CN116230666B (en) * | 2023-05-05 | 2023-08-08 | 烟台台芯电子科技有限公司 | DBC double-sided micro-channel refrigeration IGBT module and manufacturing method thereof |
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