CN111463177A - Power module and application method thereof - Google Patents
Power module and application method thereof Download PDFInfo
- Publication number
- CN111463177A CN111463177A CN202010271721.1A CN202010271721A CN111463177A CN 111463177 A CN111463177 A CN 111463177A CN 202010271721 A CN202010271721 A CN 202010271721A CN 111463177 A CN111463177 A CN 111463177A
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- power module
- module
- power
- sintering
- chip
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- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000005245 sintering Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000000088 plastic resin Substances 0.000 claims abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 230000017525 heat dissipation Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000009413 insulation Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a power module. The power module comprises a chip, a lead frame, a substrate, a shell and a connecting terminal. The first surface of the chip is fixed on the substrate in a metal sintering mode. The lead frame is integrally formed, and one end of the lead frame is fixedly connected with the second surface of the chip and the substrate in a metal sintering mode to form a circuit of the power module. The shell is filled with plastic resin, and the chip, the lead frame and the substrate are plastically packaged. One end of the connecting terminal is plastically packaged in the shell and is electrically connected to the substrate, and the other end of the connecting terminal extends out of the shell. The connecting terminal comprises an input terminal and an output terminal, and the input terminal and the output terminal are respectively arranged on two opposite sides of the shell. The invention also discloses an application method of the power module. This may enhance the reliability and power density of the power module.
Description
Technical Field
The invention relates to a power module and an application method thereof.
Background
The existing high-power module, such as a silicon-based insulation type power semiconductor module, is a module type product in which a plurality of Si-1GBT chips and diode chips are combined to form a circuit on an insulation bottom plate. The lower surfaces of these chips are generally connected to the substrate by solder, and are also bonded to the heat sink by solder, thereby improving the strength and heat dissipation of the substrate.
However, the use of solder material limits the operating temperature to around 175 ℃, and the deterioration of the solder joint is increased and the thermal resistance is increased due to temperature cycling, thereby affecting the reliability of the power module; in addition, the low thermal conductivity of solder generally makes the power module bulky, thereby reducing power density.
Disclosure of Invention
In view of the above, it is desirable to provide a power module with high reliability and high power density and a method for applying the same.
The technical scheme provided by the invention for achieving the purpose is as follows:
the utility model provides a power module, power module includes chip, lead frame, base plate, shell and connecting terminal, the first surface of chip is fixed in through the mode of metal sintering on the base plate, lead frame integrated into one piece, the one end of lead frame pass through the mode of metal sintering with the second surface of chip reaches base plate fixed connection, in order to constitute power module's circuit, the shell adopts plastic resin to fill, with the plastic envelope the chip the lead frame reaches the base plate, the one end plastic envelope of connecting terminal in the shell to the electricity connect in the base plate, the other end of connecting terminal stretches out outside the shell, connecting terminal includes input terminal and output terminal, input terminal with output terminal set up respectively in the both sides that the shell is relative.
Further, the chip comprises a plurality of wide bandgap semiconductor devices to form a quarter-bridge module circuit or a half-bridge module circuit or a full-bridge module circuit.
Furthermore, the chip comprises a plurality of wide bandgap semiconductor devices, a thermistor and a current sensor so as to form an intelligent power module circuit.
Further, the metal sintering is copper sintering or silver sintering, and the sintering thickness is 30-200 um.
Furthermore, the thickness of the lead frame is 0.5-1.5 mm.
Further, the substrate is a copper-clad ceramic plate.
Furthermore, the housing further comprises a fixing part for fixing the power module, and the fixing part is a through hole penetrating through the housing.
Further, the shell still includes the fixed part for fixing power module, the fixed part is two mountings, these two mountings set up in respectively misplacing in the relative both sides of shell, and with connecting terminal stretches out the direction of shell is perpendicular.
The method for applying the power module is described above.
Further, the method comprises the following steps:
providing three of said power modules;
providing a heat dissipation module, and tightly arranging and fixing three power modules on the heat dissipation module in a metal sintering manner, wherein the three power modules are connected in parallel, input terminals of the three power modules are positioned at the same side, output terminals of the three power modules are positioned at the opposite side, the metal sintering is copper sintering or silver sintering, and the sintering thickness is 30-200 um;
and electrically connecting the input terminal of the connecting terminal with an input module, and electrically connecting the output terminal of the connecting terminal with an output module.
According to the power module and the application method thereof, the chips, the lead frames and the substrate which form the power module are connected in a high-heat-conductivity metal sintering mode, and the integrally-formed lead frames form a quarter-bridge circuit or a half-bridge circuit of the power module, so that the reliability of the power module can be enhanced, the power density can be improved, and different functional requirements can be flexibly met through the parallel combination of a plurality of power modules.
Drawings
Fig. 1 is a schematic structural diagram of a power module according to a preferred embodiment of the invention.
Fig. 2 is another structural schematic diagram of a power module according to a preferred embodiment of the invention.
Fig. 3 is a block diagram of a power module according to a preferred embodiment of the invention.
Fig. 4 is a block diagram of another preferred embodiment of the power module of the present invention.
Fig. 5 is a schematic structural diagram of a power module according to a preferred embodiment of the present invention.
FIG. 6 is a flow chart of a preferred embodiment of a method for applying a power module according to the present invention.
Description of the main elements
Fixed part 42
Through hole 422
Fixing member 424
The following detailed description will further illustrate the invention in conjunction with the above-described figures.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, a power module 100 is provided. The power module 100 includes a chip 10, a lead frame 20, a substrate 30, and a housing 40. In the present embodiment, the power module 100 is applicable to an electric power device such as an inverter.
The first surface of the chip 10 is fixed on the substrate 30 by means of metal sintering. The lead frame 20 is integrally formed, and the lead frame 20 is fixedly connected to the second surface of the chip 10 and the substrate 30 by metal sintering, so as to form a circuit of the power module 100. The housing 40 is filled with plastic resin to plastically package the chip 10, the lead frame 20, and the substrate 30.
Further, referring to fig. 2, fig. 2 is another schematic structural diagram of a preferred embodiment of the invention, and the power module 100 further includes a connection terminal 50. One end of the connection terminal 50 is plastic-encapsulated in the housing 40 and electrically connected to the substrate 30, and the other end of the connection terminal 50 extends out of the housing 40 to be electrically connected to other power modules (not shown). The connection terminal 50 includes an input terminal 52 and an output terminal 54. The input terminal 52 and the output terminal 54 are respectively disposed on two opposite sides of the housing 40.
In the present embodiment, the chip 10 includes several wide bandgap semiconductor devices to form a quarter-bridge module circuit, a half-bridge module circuit, or a full-bridge module circuit, i.e., to form a 1in1 power module, a 2in1 power module, or a 6in1 power module. In other embodiments, the chip 10 may further include a plurality of wide bandgap semiconductor devices, thermistors, and current sensors to form a smart power module circuit.
In the present embodiment, the metal sintering is copper sintering or silver sintering, and the sintering thickness is 30 to 200 um. Since the thermal conductivity of copper or silver is high, the service temperature range of the power module can be increased, the power module can work in a high temperature environment, and the thermal resistance can be reduced, thereby improving the reliability of the power module 100.
In the present embodiment, the lead frame 20 is made of a metal material such as copper. The thickness of the lead frame is 0.5-1.5 mm. The present invention can improve the bonding strength between the chip 10, the substrate 30, and the case 40 by using the integrally formed lead frame, and is advantageous for the miniaturization design of the power module 100 while further enhancing the reliability of the power module 100, thereby improving the power density.
In the present embodiment, the substrate 30 is a copper clad ceramic plate.
Further, referring to fig. 3 and 4, the housing 40 further includes a fixing portion 42 for fixing the power module 100 to other functional modules, such as a heat dissipation module. In a preferred embodiment, the fixing portion 42 is a through hole 422 (fig. 3) penetrating through the housing 40. Locking members, such as screws, may be used to secure the power module 100 to the heat dissipation module through the through holes 422.
In another embodiment, the fixing portion 42 may further include two fixing members 424 (see fig. 4), and the two fixing members 424 are respectively disposed at two opposite sides of the housing 40 in a staggered manner, and are perpendicular to the direction in which the connection terminal 50 extends out of the housing 40. Thus, when a plurality of the power modules 100 are assembled, the distance between the power modules 100 can be reduced, and the volume of the whole module can be reduced.
Referring to fig. 5 and fig. 6, the present invention further discloses an application method of the power module, which includes the following steps.
S1, three power modules 100 are provided, in this embodiment, the power module 100 is a 2in1 power module.
S2, providing a heat sink module 200, and fixing the three power modules 100 on the heat sink module 200 in a close-packed manner by metal sintering. The three power modules 100 are connected in parallel such that the input terminals 52 of the three power modules 100 are on the same side and the output terminals 54 of the three power modules 100 are on the opposite side. In the present embodiment, the metal sintering is copper sintering or silver sintering, and the sintering thickness is 30 to 200 um.
S3, electrically connecting the input terminal 52 of the connection terminal 50 with the external input module 300, and electrically connecting the output terminal 54 of the connection terminal 50 with the external output module 400.
In the present embodiment, the withstand voltage/current of a single 2in1 power module is 1200V/200A, but when three such power modules are used in combination by the above method, the withstand voltage/current is 1200/600A.
More specifically, any one of the three power modules 100 can be driven independently to output three-phase power from the output terminal 54, and the inverter circuit configuration can be completed by combining the power modules into 6in 1. Therefore, the service life of the power module can be prolonged, and the application range is expanded.
The power module formed by packaging the power device can be widely applied to the application fields of photovoltaic, electric vehicles and the like. Power modules are being developed with high power density and high reliability. The power module with high power density and high reliability is beneficial to reducing the size of the system and improving the high power density of the system. The chip, the lead frame and the substrate which form the power module are connected in a high-heat-conductivity metal sintering mode, and the integrally-formed lead frame is used for forming different module circuits such as a quarter-bridge module circuit, a half-bridge module circuit or a full-bridge module circuit of the power module, so that the reliability of the power module can be enhanced, the power density can be improved, different functional requirements can be flexibly met through the parallel combination of a plurality of power modules, and the application range can be expanded.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A power module is characterized in that the power module comprises a chip, a lead frame, a substrate, a shell and a connecting terminal, the first surface of the chip is fixed on the substrate in a metal sintering mode, the lead frame is integrally formed, one end of the lead frame is fixedly connected with the second surface of the chip and the substrate in a metal sintering mode, to constitute the circuit of the power module, the shell is filled with plastic resin to plastically pack the chip, the lead frame and the substrate, one end of the connecting terminal is plastically packed in the shell, the other end of the connecting terminal extends out of the shell, the connecting terminal comprises an input terminal and an output terminal, and the input terminal and the output terminal are respectively arranged on two opposite sides of the shell.
2. The power module of claim 1, wherein the chip includes a number of wide bandgap semiconductor devices to form a quarter bridge module circuit or a half bridge module circuit or a full bridge module circuit.
3. The power module of claim 1 wherein the chip comprises a plurality of wide bandgap semiconductor devices, a thermistor, and a current sensor to form a smart power module circuit.
4. The power module according to claim 1, wherein the metal sintering is copper sintering or silver sintering, and the sintering thickness is 30-200 um.
5. The power module according to claim 1, wherein the thickness of the lead frame is 0.5 to 1.5 mm.
6. The power module of claim 1, wherein the substrate is a copper clad ceramic board.
7. The power module of claim 1 wherein the housing further comprises a securing portion for securing the power module, the securing portion being a through hole extending through the housing.
8. The power module according to claim 1, wherein the housing further comprises a fixing portion for fixing the power module, the fixing portion is two fixing members, and the two fixing members are respectively disposed at opposite sides of the housing in a staggered manner and perpendicular to a direction in which the connection terminal protrudes from the housing.
9. The method for applying the power module according to any one of claims 1-8.
10. The method of application of claim 9, comprising the steps of:
providing three of said power modules;
providing a heat dissipation module, and tightly arranging and fixing three power modules on the heat dissipation module in a metal sintering manner, wherein the three power modules are connected in parallel, input terminals of the three power modules are positioned at the same side, output terminals of the three power modules are positioned at the opposite side, the metal sintering is copper sintering or silver sintering, and the sintering thickness is 30-200 um;
and electrically connecting the input terminal of the connecting terminal with an input module, and electrically connecting the output terminal of the connecting terminal with an output module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010271721.1A CN111463177A (en) | 2020-04-09 | 2020-04-09 | Power module and application method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010271721.1A CN111463177A (en) | 2020-04-09 | 2020-04-09 | Power module and application method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111463177A true CN111463177A (en) | 2020-07-28 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010271721.1A Pending CN111463177A (en) | 2020-04-09 | 2020-04-09 | Power module and application method thereof |
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| Country | Link |
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| CN (1) | CN111463177A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113594053A (en) * | 2021-06-24 | 2021-11-02 | 深圳基本半导体有限公司 | All-metal sintering power module interconnection process |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201845769U (en) * | 2010-11-04 | 2011-05-25 | 嘉兴斯达微电子有限公司 | Compact power module |
| CN103401438A (en) * | 2013-08-13 | 2013-11-20 | 苏州工业园区凯众通微电子技术有限公司 | Novel surface-mounted bridge-type rectifier and manufacturing method thereof |
| CN103795272A (en) * | 2014-01-25 | 2014-05-14 | 嘉兴斯达半导体股份有限公司 | Three-phase rectifier bridge power module |
| CN107170720A (en) * | 2017-06-14 | 2017-09-15 | 扬州国扬电子有限公司 | A kind of stacked package two-side radiation power model |
| CN107170714A (en) * | 2017-06-14 | 2017-09-15 | 扬州国扬电子有限公司 | A kind of low stray inductance power model of low stray inductance power model and two-side radiation |
| CN209929293U (en) * | 2019-02-28 | 2020-01-10 | 深圳基本半导体有限公司 | Power module and inversion power unit |
-
2020
- 2020-04-09 CN CN202010271721.1A patent/CN111463177A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201845769U (en) * | 2010-11-04 | 2011-05-25 | 嘉兴斯达微电子有限公司 | Compact power module |
| CN103401438A (en) * | 2013-08-13 | 2013-11-20 | 苏州工业园区凯众通微电子技术有限公司 | Novel surface-mounted bridge-type rectifier and manufacturing method thereof |
| CN103795272A (en) * | 2014-01-25 | 2014-05-14 | 嘉兴斯达半导体股份有限公司 | Three-phase rectifier bridge power module |
| CN107170720A (en) * | 2017-06-14 | 2017-09-15 | 扬州国扬电子有限公司 | A kind of stacked package two-side radiation power model |
| CN107170714A (en) * | 2017-06-14 | 2017-09-15 | 扬州国扬电子有限公司 | A kind of low stray inductance power model of low stray inductance power model and two-side radiation |
| CN209929293U (en) * | 2019-02-28 | 2020-01-10 | 深圳基本半导体有限公司 | Power module and inversion power unit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113594053A (en) * | 2021-06-24 | 2021-11-02 | 深圳基本半导体有限公司 | All-metal sintering power module interconnection process |
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Application publication date: 20200728 |