CN113594053A - All-metal sintering power module interconnection process - Google Patents
All-metal sintering power module interconnection process Download PDFInfo
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- CN113594053A CN113594053A CN202110706027.2A CN202110706027A CN113594053A CN 113594053 A CN113594053 A CN 113594053A CN 202110706027 A CN202110706027 A CN 202110706027A CN 113594053 A CN113594053 A CN 113594053A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83024—Applying flux to the bonding area
Abstract
The invention provides an all-metal sintering power module interconnection process, which comprises the steps of electrically connecting a substrate inside a power module with the lower surface of a chip, electrically connecting the upper surface of the chip with a lead frame connected with a power terminal and a control terminal, electrically connecting the substrate with a radiator outside the module, and sequentially connecting the substrates and the radiator; the interconnection process based on the method realizes the all-metal sintering electrical connection between the chip and the substrate, between the chip and the lead frame, between the module bottom plate and the radiator, further improves the heat dissipation performance and the reliability of the power module by utilizing the all-metal sintering connection characteristic, and improves and solves the problems of low service temperature, poor heat dissipation performance, high-temperature creep failure, lead winding and the like of the traditional material process based on welding and lead bonding.
Description
Technical Field
The invention relates to the technical field of power semiconductor connection, in particular to an electrical connection process for the inside and the outside of a power module.
Background
The wide bandgap semiconductor device represented by SiC has the excellent characteristics of high voltage resistance, low loss, high-frequency and high-temperature operation and the like, the SiC chip can stably work at the temperature of more than 300 ℃, and the expected module junction temperature can reach 175-200 ℃. This presents challenges to the packaging form, packaging materials, and packaging process of conventional modules. The junction temperature of the power module adopting the soldering process is generally lower than 150 ℃, and when the power module is applied to the condition that the junction temperature is 175-200 ℃ or even more than 200 ℃, the performance of a connecting layer can be rapidly degraded, so that the working reliability of the module is influenced.
The metal sintering technology has the advantages of low-temperature sintering and high-temperature service, the thickness is 60-70% thinner than that of a traditional welding layer, the connection temperature is less than 300 ℃, the melting point is suitable for interconnection of high-temperature devices, the electrical property (4.1 multiplied by 107Sm < -1 >) and the thermal property (240Wm < -1 > K < -1 >) are superior to those of lead-free solder, the electrical conductivity is improved by 5-6 times, the thermal conductivity is improved by 3-4 times, the requirement of interconnection and heat dissipation of power chips can be well met, and the metal sintering technology is paid attention by manufacturers of power modules. With the development of metal sintering technology, the application range of the metal sintering paste is expanded from the interconnection of the lower surface of the initial chip and the substrate to the connection of the upper surface of the chip and the copper strip and the interconnection of the module outside and the radiator, and the application of different scenes also puts diversified demands on the specific sintering performance and process conditions of the metal sintering paste. For example, interconnection of the top surface of the chip to copper tape requires low sintering pressure and thickness, high reliability, and interconnection of the package substrate to a heat sink requires large sintering area of the sintered material, low sintering pressure and temperature, as compared to the most common sintered connection of the bottom surface of the chip to the substrate.
Disclosure of Invention
The invention provides an all-metal sintering power module interconnection process, which aims to solve the problem of poor heat dissipation performance of a power module caused by a traditional welding mode.
In order to solve the technical problems, the invention adopts the technical scheme that:
the invention provides an interconnection process of an all-metal sintering power module, wherein the power module comprises a substrate, a chip arranged on the substrate and a lead frame connected with the chip, and the interconnection process comprises the following steps:
step S10, coating a metal sintering material on the substrate, placing the chip on the surface of the metal sintering material, and sintering for the first time in a sintering furnace to complete the electrical connection between the chip and the substrate;
step S20, based on the lap joint structure formed by sintering the chip and the substrate, coating the metal sintering material on the upper surface of the chip, placing the lead frame on the surface of the sintering material, and sintering for the second time in a sintering furnace to complete the electrical connection between the chip and the lead frame;
and step S30, coating the metal sintering material on the bottom plate of the power module or the connecting surface of the radiator, and sintering for the third time in a sintering furnace to finish the electrical connection between the power module and the radiator.
Preferably, the sintering process comprises a sintering atmosphere, a sintering temperature, a sintering time and a sintering pressure, wherein the sintering atmosphere is selected from one of air, nitrogen, argon, a hydrogen-argon mixed gas, a hydrogen-nitrogen mixed gas, a nitrogen-formic acid mixed gas and an argon-formic acid mixed gas, the sintering temperature is between room temperature and 250 ℃, the sintering time is between 20 and 200min, and the sintering pressure is between 0 and 30 MPa.
Preferably, the metal sintering material comprises a sintered metal paste body, a sintered metal film and porous sintered metal foam, the sintered metal paste body comprises micro-nano copper and silver sintered paste, the sintered metal film is formed by uniformly coating the sintered metal paste body on the surface of a PET film in a micron thickness, the porous sintered metal foam takes silver and copper as foam frameworks, and the porous sintered metal foam internally contains nano and submicron pores.
Preferably, the material of the sintered metal comprises micron, submicron and nanometer-scale silver, copper and tin-coated copper particles, or foam-like silver and copper with nanometer and submicron-scale cavities.
Preferably, the substrate comprises a copper-clad ceramic substrate and an active metal brazing copper-clad substrate, and the material of the copper-clad ceramic substrate comprises silicon nitride, aluminum oxide and aluminum nitride.
Preferably, the chip comprises silicon carbide and silicon-based power devices.
Preferably, the radiator is a water-cooling radiator, and the water-cooling radiator comprises a water-cooling radiator with vibrating fins or a water-cooling radiator with spoilers.
Preferably, the water-cooled heat sink, the lead frame and the chip are provided with gold, silver or alloy metal coatings on the interconnection sintering interface, and the upper surface and the lower surface of the chip are provided with gold, silver or alloy metal coatings.
Preferably, the metal sintering material is coated on the area to be sintered inside and outside the power module, and the coating process comprises thermal transfer printing, printing and dispensing.
Compared with the prior art, the invention has the beneficial effects that: the interconnection process provided by the invention realizes the all-metal sintering electrical connection between the chip and the substrate, between the chip and the lead frame, and between the module bottom plate and the radiator, further improves the heat dissipation performance and the reliability of the power module, and improves and solves the problems of low service temperature, poor heat dissipation performance, high-temperature creep failure, lead winding and the like of the traditional material process based on welding and lead bonding.
Drawings
The detailed structure of the invention is described in detail below with reference to the accompanying drawings
Fig. 1 is a schematic flow chart of the interconnection process of the all-metal sintered power module of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
The interconnection process provided by the invention is characterized in that the electrical connection between the substrate inside the power module and the lower surface of the chip is completed, the electrical connection between the upper surface of the chip and the lead frame is completed, and the electrical connection between the substrate and the heat radiator outside the power module is completed.
Referring to the flow chart of the interconnection process of the all-metal sintered power module shown in fig. 1, the interconnection process includes the steps of:
and step S10, coating the metal sintering material on the substrate, placing the chip on the surface of the metal sintering material, and sintering for the first time in a sintering furnace to complete the electrical connection between the chip and the substrate.
The substrate comprises a copper-clad ceramic substrate and an active metal brazing copper-clad substrate, the ceramic material comprises silicon nitride, aluminum oxide and aluminum nitride, and the chip comprises silicon carbide and a silicon-based power device.
And step S20, coating a metal sintering material on the upper surface of the chip based on the lapping structure formed by sintering the chip and the substrate, placing a lead frame on the surface of the sintering material, and sintering for the second time in a sintering furnace to complete the electrical connection between the chip and the lead frame.
The lead frame is connected with a power terminal and a control terminal, and the chip is electrically connected with the lead frame by connecting and sintering the copper strips on the upper surface of the chip.
And S30, coating metal sintering material on the bottom plate of the power module or the connecting surface of the radiator, and sintering for the third time in the sintering furnace to finish the electrical connection between the power module and the radiator.
The radiator is a water-cooling radiator, so that the radiating requirement of the power module is met, and the water-cooling radiator comprises a water-cooling radiating device with vibration fins or a water-cooling radiating device with spoilers.
Further, the metal sintered material includes: sintered metal paste, sintered metal film and porous sintered metal foam; the sintered metal material comprises micron, submicron and nanometer silver, copper and tin-coated copper particles, or foam silver and copper with nanometer and submicron scale cavities. The sintered metal paste body comprises micro-nano copper and silver sintered paste sold in the market at present, the sintered metal film is formed by uniformly coating the sintered metal paste body on the surface of a PET film in a micron thickness, the porous sintered metal foam takes silver and copper as a foam framework, and nano and submicron holes are contained in the porous sintered metal foam, so that the existence of the holes is beneficial to improving the mutual binding force, the contact surface area and the friction force during metal compression joint, and is beneficial to improving the subsequent sintering interconnection and the binding strength.
It should be noted that, in the interconnection process, the steps S10, S20 and S30 may be implemented in the order of one another; the sintering process comprises setting parameters such as sintering atmosphere, sintering temperature, sintering time, sintering pressure and the like, preferably, the sintering atmosphere is selected from one of air, nitrogen, argon, hydrogen-argon mixed gas, hydrogen-nitrogen mixed gas, nitrogen-formic acid mixed gas and argon-formic acid mixed gas; the sintering temperature range is between room temperature and 250 ℃; the sintering time is 20-200 min; the sintering pressure is between 0 and 30MPa, wherein the first sintering, the second sintering and the second sintering can adopt different or same metal sintering materials, and different metal sintering materials adopt different connection processes in a specific interconnection step.
Furthermore, gold, silver or alloy metal coatings are arranged on the interconnection sintering interfaces of the water-cooling radiator, the lead frame and the chip, and the upper surface and the lower surface of the chip are provided with the gold, silver or alloy metal coatings.
Furthermore, the metal sintering material is coated on the area to be sintered inside and outside the power module, and the coating method comprises thermal transfer printing, printing and dispensing.
Specific examples are set forth below:
example 1
In a preferred embodiment of the present invention, the following steps are adopted to realize the sintering connection process of the power module:
1. chip to substrate interconnection
Printing copper sintering paste on the surface of a substrate, placing a chip above the material, uniformly heating to 250 ℃ after the sintering temperature is 150 ℃ for 10min in a hydrogen-argon mixed gas atmosphere, maintaining for 2min, cooling to room temperature, and sintering at the sintering pressure of 30MPa to complete the sintering interconnection of the chip and the substrate.
2. Sintered interconnection of chip and lead frame
Dispensing and coating silver sintering paste on the source region of the upper surface of the chip, realizing the pre-connection with the lead frame through a sintering jig, uniformly heating to 250 ℃ after the sintering temperature is 150 ℃ for 10min in the atmosphere of hydrogen-argon mixed gas, maintaining for 2min, then cooling to room temperature, and sintering at the sintering pressure of 10MPa to complete the sintering interconnection of the chip and the lead frame.
3. Sintered interconnection of module chassis and heat sink
Coating a sintering material on the connecting surface of the radiator through silver film thermal transfer printing, realizing the pre-connection with the module bottom plate through a sintering jig, uniformly heating the sintering temperature to 200 ℃ through 150 ℃ in a hydrogen-argon mixed gas atmosphere, maintaining for 20min, then cooling to room temperature, sintering without pressure, and finishing the sintering interconnection of the radiator and the module bottom plate.
The implementation of the embodiment can effectively realize the sintering interconnection of the lower surface of the chip and the substrate in the power module, the upper surface of the chip and the lead frame, and the sintering connection of the external bottom plate of the power module and the radiator, thereby greatly improving the heat dissipation and reliability of the module. Compared with the traditional welding and screw crimping of the module bottom plate and the radiator, the heat conduction capability is greatly improved, and compared with the traditional lead bonding of the upper surface of the chip to realize electrical connection, the power circulation capability is also improved.
Example 2
In a preferred embodiment of the present invention, the following steps are adopted to realize the sintering connection process of the power module:
1. sintered interconnection of module chassis and heat sink
Coating pressureless tin-coated copper sintering paste on the connecting surface of the radiator, realizing the pre-connection with the module bottom plate through a sintering jig, uniformly heating the sintering temperature to 220 ℃ through 150 ℃ in the atmosphere of mixed gas of formic acid and argon, maintaining for 35min, then cooling to room temperature, pressureless sintering, and finishing the sintering interconnection of the radiator and the module bottom plate.
2. Chip to substrate interconnection
Printing tin-coated copper sintering paste on the surface of a substrate, placing a chip above the material, uniformly heating to 250 ℃ after the sintering temperature is 150 ℃ for 10min in the atmosphere of mixed gas of formic acid and argon, maintaining for 5min, cooling to room temperature, and sintering at the sintering pressure of 30MPa to complete the sintering interconnection of the chip and the substrate.
3. Sintered interconnection of chip and lead frame
And printing a tin-coated copper sintering paste on the source region on the upper surface of the chip, realizing the pre-connection with the lead frame through a sintering jig, uniformly heating to 250 ℃ after the sintering temperature is 150 ℃ for 10min in the mixed gas atmosphere of formic acid and argon, maintaining for 2min, cooling to room temperature, and sintering at the sintering pressure of 10MPa to complete the sintering interconnection of the chip and the lead frame.
In the implementation of the embodiment, the interconnection between the lower surface of the chip inside the power module and the substrate and the interconnection between the upper surface of the chip and the lead frame are realized based on the transient liquid phase sintering, and the connection between the external bottom plate of the power module and the radiator is realized, so that the transient liquid phase sintering technology has lower cost and lower sintering process temperature compared with silver sintering.
Example 3
In a preferred embodiment 3 of the present invention, the following steps are used to realize the sintering connection process of the power module:
1. chip to substrate interconnection
Coating a silver film on the surface of a substrate based on a thermal transfer silver film process, placing a chip above the material, uniformly heating to 250 ℃ after the sintering temperature is 150 ℃ for 10min in a hydrogen-argon mixed gas atmosphere, maintaining for 2min, cooling to room temperature, and sintering at 15MPa to complete the sintering interconnection of the chip and the substrate.
2. Sintered interconnection of chip and lead frame
The method comprises the steps of coating a silver film on a source region on the upper surface of a chip based on a thermal transfer silver film process, realizing pre-connection with a lead frame through a sintering jig, uniformly heating to 250 ℃ after the sintering temperature is 150 ℃ for 10min in a hydrogen-argon mixed gas atmosphere, maintaining for 2min, cooling to room temperature, and sintering at the sintering pressure of 10MPa to complete sintering interconnection of the chip and the lead frame.
3. Sintered interconnection of module chassis and heat sink
Coating a sintering material on the connecting surface of the radiator through silver film thermal transfer printing, realizing the pre-connection with the module bottom plate through a sintering jig, uniformly heating the sintering temperature to 200 ℃ through 150 ℃ in a hydrogen-argon mixed gas atmosphere, maintaining for 20min, then cooling to room temperature, sintering without pressure, and finishing the sintering interconnection of the radiator and the module bottom plate.
The implementation of the embodiment realizes the interconnection of the lower surface of the chip and the substrate in the power module, the upper surface of the chip and the lead frame based on the silver film heat transfer printing, and the connection of the external bottom plate of the power module and the radiator, the silver film has higher sintering efficiency compared with silver paste, the sintering time is shorter, and the improvement of the interconnection efficiency is facilitated.
It can be seen from the above embodiments that different types of metal sintering materials are used for different connection interfaces of the power module in embodiment 1, and the sintering sequence is chip and substrate- > chip and lead frame- > module bottom plate and heat sink; in the embodiment 2, different connecting interfaces of the power module use tin-clad copper sintering materials, and based on an instantaneous liquid phase sintering mechanism, the sintering sequence is that a module bottom plate and a radiator- > a chip and a substrate- > the chip and a lead frame; in the embodiment 3, the different connection interfaces of the power module use silver film thermal transfer sintering materials, and the sintering sequence is module bottom plate and radiator- > chip and substrate- > chip and lead frame.
In conclusion, the interconnection process based on the method of the invention realizes the all-metal sintering electrical connection between the chip and the substrate, between the chip and the lead frame, and between the module bottom plate and the radiator, further improves the heat dissipation performance and the reliability of the power module by utilizing the all-metal sintering electrical connection characteristic, and improves and solves the problems of low service temperature, poor heat dissipation performance, high-temperature creep failure, lead winding and the like of the traditional material process based on welding and lead bonding.
Finally, it is noted that the above-mentioned preferred embodiments illustrate rather than limit the invention, and that, although the invention has been described in detail with reference to the above-mentioned preferred embodiments, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the invention as defined by the appended claims.
Claims (9)
1. An all-metal sintered power module interconnection process, the power module comprising a substrate, a chip disposed on the substrate, and a lead frame connected to the chip, the interconnection process comprising the steps of:
step S10, coating a metal sintering material on the substrate, placing the chip on the surface of the metal sintering material, and sintering for the first time in a sintering furnace to complete the electrical connection between the chip and the substrate;
step S20, based on the lap joint structure formed by sintering the chip and the substrate, coating the metal sintering material on the upper surface of the chip, placing the lead frame on the surface of the sintering material, and sintering for the second time in a sintering furnace to complete the electrical connection between the chip and the lead frame;
and step S30, coating the metal sintering material on the bottom plate of the power module or the connecting surface of the radiator, and sintering for the third time in a sintering furnace to finish the electrical connection between the power module and the radiator.
2. The all-metal sintered power module interconnection process according to claim 1, wherein the sintering process comprises a sintering atmosphere, a sintering temperature, a sintering time and a sintering pressure, the sintering atmosphere is selected from one of air, nitrogen, argon, a hydrogen-argon mixture, a hydrogen-nitrogen mixture, a nitrogen-formic acid mixture and an argon-formic acid mixture, the sintering temperature is between room temperature and 250 ℃, the sintering time is between 20 and 200min, and the sintering pressure is between 0 and 30 MPa.
3. The all-metal sintered power module interconnection process according to claim 1, wherein the metal sintered material comprises a sintered metal paste, a sintered metal film and a porous sintered metal foam, the sintered metal paste comprises micro-nano copper and silver sintered paste, the sintered metal film is formed by uniformly coating the sintered metal paste on the surface of a PET film in a micron thickness, and the porous sintered metal foam uses silver and copper as foam frameworks and contains nano and sub-micron pores inside.
4. The all-metal sintered power module interconnection process of claim 3, wherein the material of the sintered metal comprises micron, submicron and nanometer-scale silver, copper and tin-coated copper particles, or foamed silver and copper with nanometer and submicron-scale voids.
5. The all-metal sintered power module interconnection process of claim 1, wherein the substrates comprise a copper-clad ceramic substrate and an active metal brazed copper-clad substrate, and the material of the copper-clad ceramic substrate comprises silicon nitride, aluminum oxide, and aluminum nitride.
6. The all-metal sintered power module interconnect process of claim 1, wherein said chip comprises silicon carbide and silicon-based power devices.
7. The all-metal sintered power module interconnection process according to claim 1, wherein the heat sink is a water-cooled heat sink comprising a water-cooled heat sink with vibrating fins or a water-cooled heat sink with spoilers.
8. The all-metal sintered power module interconnection process of claim 7, wherein gold, silver or alloy metal coatings are formed on the sintering interfaces of the water-cooled heat sink, the lead frame and the chip, and the gold, silver or alloy metal coatings are formed on the upper surface and the lower surface of the chip.
9. The all-metal sintered power module interconnection process of claim 1, wherein the metal sintering material is coated on the inside and outside of the power module in the area to be sintered, and the coating process comprises thermal transfer printing, printing and dispensing.
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| US20090206456A1 (en) * | 2008-02-14 | 2009-08-20 | Infineon Technologies Ag | Module including a sintered joint bonding a semiconductor chip to a copper surface |
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| US20120061815A1 (en) * | 2010-09-08 | 2012-03-15 | Vincotech Holdings S.A.R.L. | Power semiconductor module having sintered metal connections, preferably sintered silver connections, and production method |
| US20120175755A1 (en) * | 2011-01-12 | 2012-07-12 | Infineon Technologies Ag | Semiconductor device including a heat spreader |
| CN108321129A (en) * | 2018-03-30 | 2018-07-24 | 深圳赛意法微电子有限公司 | The packaging method and its package module of power device, lead frame |
| CN111463177A (en) * | 2020-04-09 | 2020-07-28 | 深圳基本半导体有限公司 | Power module and application method thereof |
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- 2021-06-24 CN CN202110706027.2A patent/CN113594053A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090206456A1 (en) * | 2008-02-14 | 2009-08-20 | Infineon Technologies Ag | Module including a sintered joint bonding a semiconductor chip to a copper surface |
| US20110290863A1 (en) * | 2010-05-31 | 2011-12-01 | Ryoichi Kajiwara | Sintering silver paste material and method for bonding semiconductor chip |
| US20120061815A1 (en) * | 2010-09-08 | 2012-03-15 | Vincotech Holdings S.A.R.L. | Power semiconductor module having sintered metal connections, preferably sintered silver connections, and production method |
| US20120175755A1 (en) * | 2011-01-12 | 2012-07-12 | Infineon Technologies Ag | Semiconductor device including a heat spreader |
| CN108321129A (en) * | 2018-03-30 | 2018-07-24 | 深圳赛意法微电子有限公司 | The packaging method and its package module of power device, lead frame |
| CN111463177A (en) * | 2020-04-09 | 2020-07-28 | 深圳基本半导体有限公司 | Power module and application method thereof |
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