CN108321129A - The packaging method and its package module of power device, lead frame - Google Patents
The packaging method and its package module of power device, lead frame Download PDFInfo
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- CN108321129A CN108321129A CN201810276023.3A CN201810276023A CN108321129A CN 108321129 A CN108321129 A CN 108321129A CN 201810276023 A CN201810276023 A CN 201810276023A CN 108321129 A CN108321129 A CN 108321129A
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- substrate
- power chip
- silver
- pin
- power
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 186
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 64
- 239000004033 plastic Substances 0.000 claims abstract description 46
- 238000005245 sintering Methods 0.000 claims abstract description 43
- 230000008569 process Effects 0.000 claims abstract description 27
- 238000003466 welding Methods 0.000 claims abstract description 26
- 238000005520 cutting process Methods 0.000 claims abstract description 15
- 238000012858 packaging process Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 30
- 238000005538 encapsulation Methods 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 239000004332 silver Substances 0.000 claims description 13
- 238000009413 insulation Methods 0.000 claims description 7
- 229910000679 solder Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000009477 glass transition Effects 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- 239000010408 film Substances 0.000 description 51
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 239000003292 glue Substances 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000006071 cream Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- 230000018199 S phase Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- -1 therefore Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49537—Plurality of lead frames mounted in one device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
Abstract
A kind of packaging method and its package module, lead frame of power device.The packaging method includes sintering process, the process of connecting lead wire frame, plastic packaging process and rib cutting process.In sintering process, Ag films are bonded in the silver-plated back side of power chip, power chip is sintered in the silver-plated area of substrate top surface by sintering process.It is sintered the substrate and power chip completed, welding with by way of wire bonding, is connect with lead frame.When plastic packaging, needs exposed region to place one layer of supporting film in substrate, the plastic packaging region of lead frame is molded, package casing is formed.Supporting film is removed, rib cutting is carried out to lead frame, obtains the package module of power device.The package module of the power device is obtained by the packaging method.The packaging method and package module enhance the heat-conductive characteristic between power chip and substrate and improve product reliability.First source electrode pin of the lead frame of the present invention is formed with connecting line, improves the stability of connection.
Description
Technical field
The present invention relates to the encapsulation field of semiconductor devices, more particularly to the packaging method of a kind of power device and its encapsulation
Module, lead frame.
Background technology
With the exhaustion of Global Oil resource and being on the rise for Global Greenhouse Effect, countries in the world are all being greatly developed
Low-carbon economy, with the development of this trend, electric vehicle substitution fuel-engined vehicle has become certainty.Simultaneously to being applied to automobile
The requirement of the encapsulation component of frequency-variable module also improves, however conventional plastic packaging technology cannot meet electric vehicle neck
The power of high heat conduction, high input impedance, low capacitor requirements required by domain is converted.
For example, in traditional packaging process, chip would generally be fixed on by adhesives in package platforms, and pass through bonding
Layer, which is realized, to be electrically connected, and heat is transferred to package substrate to carry out heat conduction via adhesive linkage caused by chip.The binding material is usual
For elargol or tin cream, however, either elargol or tin cream, its own all contains organic matter adhesive, organic matter bonding
Agent is combined with the oxygen of air is also easy to produce gas, causes adhesive linkage voidage height, thermal conductivity poor.
In another example in the plastic package process of conventional package, capsulation material can be spilt on package substrate when injection molding, rear road work
Sequence needs, by going excessive glue and tin plating technique to ensure the availability of power device, to increase the follow-up technological process for going excessive glue
And increase the thermal losses of product.
Invention content
In order to solve, adhesive linkage voidage existing for the packaging method of power device in traditional technology is high, thermal conductivity is poor, increases
Add follow-up the problem of going the technological process of excessive glue and increasing product thermal losses, the present invention provides a kind of encapsulation sides of power device
Method.
The present invention separately provides a kind of package module of power device, which can be obtained by above-mentioned packaging method.
The present invention provides a kind of lead frame of power device again, which includes multiple row lead wire unit, the lead
Unit with the power chip of the package module of above-mentioned power device for connecting.
The present invention provides a kind of packaging method of power device, including：
Sintering process：Power chip and substrate are provided, it is silver-plated at the back side of the power chip, in the top surface of the substrate
It is silver-plated, preforming Ag films are bonded in the silver-plated back side of the power chip, are sintered power chip by sintering process
In the silver-plated area of the substrate top surface, the power chip is made to be sintered together with the substrate；
The process of connecting lead wire frame：The substrate and the power chip that sintering is completed, pass through welding and lead
The mode of bonding, connect with lead frame；
Plastic packaging process：After the substrate and the power chip are connected to the lead frame, needed in the substrate exposed
Region place one layer of supporting film, the plastic packaging region of the lead frame is molded, formed package casing, make the envelope
Casing coats the substrate, the power chip and the part lead frame, and part lead frame exposes outside the encapsulation
Shell；
Rib cutting process：The supporting film is removed, rib cutting is carried out to the lead frame, obtains the Encapsulation Moulds of power device
Block.
The present invention separately provides a kind of package module of power device, including：
Package casing is formed with top pressure hole on the package casing；
Substrate is encapsulated in the package casing, and the substrate has bottom surface and top surface, and the top and bottom are plated
The silver-plated area of silver, the substrate bottom surface is exposed outside the package casing；
The back side of power chip, the power chip is silver-plated, and the silver-plated back side of the power chip passes through Ag films and institute
The silver-plated area for stating substrate top surface sinters into together；
Lead wire unit, each pin of the lead wire unit is welded to connect with the substrate, the power chip or lead key
Connection is closed, the pin part of the lead wire unit is coated in the package casing, partly exposes the package casing.
The present invention separately provides a kind of lead frame of power device, including multiple row lead wire unit, and each column lead wire unit includes
Drain pin, the first source electrode pin opposite with the drain pin, the second source electrode pin and gate pole pin, first source
Pole pipe foot is connect with the second source electrode pin；
The first source electrode pin close to the drain pin one end formed connecting line, the connecting line undulate,
The corrugated connecting line includes at least two grooves, the bottom of two of which groove two with the power chip respectively
Source electrode connects；
The drain pin of the lead wire unit with the substrate for load power device for being welded to connect, the lead list
First source electrode pin of member for connect with the source solder of the power chip, the gate pole pin of the lead frame for
The gate pole bonding connection of the power chip.
The technical solution that the embodiment of the present invention provides can include the following benefits：
The present invention power device packaging method, including sintering process, the process of connecting lead wire frame, plastic packaging process and
The back side of rib cutting process, power chip is silver-plated, and the top surface of substrate is silver-plated, and Ag films are bonded in the silver-plated back side of power chip, leads to
Power chip is sintered in the silver-plated region of substrate top surface by oversintering technique, and power chip is made to be sintered together with substrate, by
In the silver-plated area of power chip and Ag films phase sintering, while Ag films silver-plated area's phase sintering with substrate top surface again, and all
Be between belonging to same metal sintering fusion, therefore, Ag films well with the silver layer and substrate top surface on power chip
Silver layer blend, reduce generation empty between power chip and substrate, it might even be possible to avoid cavity completely, enhance work(
Heat conductivility between rate chip and substrate meets requirement of the electric vehicle field to power device high-termal conductivity.And due to
Ag films thickness is unevenly distributed after will not being coated with as elargol or tin cream, after sintering, the silver between substrate and power chip
Film thickness is highly uniform, it is possible to prevente effectively from power chip warpage, reduces cavity so that connecing between substrate and power chip
It is more preferable to touch property, conductibility.It is sintered the substrate and power chip completed, by way of welding and wire bonding, with lead frame
Connection.It so establishes and connects with lead frame, it is convenient to be electrically connected with external circuit.After completing the connection with lead frame,
It needs exposed area to place one layer of supporting film in substrate, the capsulation material in spilling plastic packaging region is made to flow on the supporting film, from
And ensure there is no excessive glue to avoid encapsulation metacoxal plate dirty on substrate, reduce the technological process for subsequently going excessive glue.And then it avoids dirty
Dirt influences the heat dissipating properties of encapsulated device.The plastic packaging region of lead frame is molded, package casing is formed, makes outside encapsulation
Shell coats substrate, power chip and part lead frame, and part lead frame exposes package casing, to be connect with external circuit.
After the completion of plastic packaging, the supporting film on lead frame is removed.Rib cutting is carried out to lead frame, just obtains power device package mould
Block.
The package module of the present invention includes package casing, the substrate, power chip and the lead list that are encapsulated in package casing
Member.The substrate has bottom surface and top surface, and top and bottom are silver-plated, and the silver-plated area of substrate bottom surface is exposed outside package casing,
The silver-plated convenience in top surface of substrate is sintered with power chip, and the bottom surface of substrate is silver-plated and exposed, can not only accelerate to radiate, after plastic packaging
Structure can be also mounted in a manner of being sintered on the external circuit board or on other application device the silver-plated area of substrate bottom surface.Work(
The back side of rate chip is silver-plated, and the silver-plated back side of the power chip sinters one by the silver-plated area of Ag films and substrate top surface
It rises.Power chip and substrate are linked together by way of Ag films sintering, can be reduced empty between power chip and substrate
The generation in hole enhances the heat conductivility between power chip and substrate.And since Ag films thickness will not be as elargol or tin
Cream is unevenly distributed after being coated with like that, and after sintering, the Ag films thickness between substrate and power chip is highly uniform, can be effective
Power chip warpage is avoided, reduces cavity so that the contact, conductibility between substrate and power chip are more preferable.Lead wire unit
Each pin be welded to connect with substrate, power chip or wire bonding is connect, the pin part of lead wire unit is coated on the envelope
In casing, package casing is exposed in part, and thereby, package module is established by the lead wire unit and external circuit and connected.
The lead frame of the present invention includes multiple row lead wire unit, and each column lead wire unit includes drain pin and the drain electrode
The first opposite source electrode pin of pin, the second source electrode pin and gate pole pin, the first source electrode pin and second source
Pole pipe foot connects；First source electrode pin forms connecting line, connecting line undulate, corrugated company close to one end of drain pin
Wiring includes at least two grooves, and the bottom of two of which groove is connect with two source electrodes of the power chip respectively.First
The connecting line of source electrode pin substitutes traditional metal wire connection power chip, not only can avoid power chip and connects more metal wire
Complicated technology, cause more defective workmanships, and also ensure the stability that power chip is connected with lead wire unit.Lead
The drain pin of unit is used to be welded to connect with the substrate of load power device, the first source electrode pin and the power core of lead wire unit
The source solder of piece connects, and the gate pole pin of the lead frame is used to be bonded connection with the gate pole of the power chip, as a result,
The lead frame is electrically connected with the power chip foundation that need to be encapsulated.
It should be understood that above general description and following detailed description is merely exemplary, this can not be limited
Invention.
Description of the drawings
The drawings herein are incorporated into the specification and forms part of this specification, and shows the implementation for meeting the present invention
Example, and in specification together principle for explaining the present invention.
Fig. 1 is the packaging method flow chart of the power device of the present invention.
Fig. 2 is the structural schematic diagram of substrate.
Fig. 3 is power chip and the sintered structural schematic diagram of substrate.
Fig. 4 is the structural schematic diagram of lead frame.
Fig. 5 is the structural schematic diagram of lead wire unit.
Fig. 6 is the structural schematic diagram after substrate, power chip and lead frame connection.
Fig. 7 is the side schematic view of the connecting line of the first source electrode pin.
Fig. 8 is the front schematic view of the package module of power device.
Fig. 9 is the schematic rear view of the package module of power device.
Specific implementation mode
Principle in order to further illustrate the present invention and structure carry out the preferred embodiment of the present invention in conjunction with attached drawing detailed
It describes in detail bright.
The present invention provides a kind of packaging method of power device, and in conjunction with shown in Fig. 1, Fig. 1 is the power device of the present invention
Packaging method flow chart, includes the following steps：
Step S1:Sintering process provides power chip and substrate, silver-plated at the back side of power chip, in the top surface of substrate
It is silver-plated, preforming Ag films are bonded in the silver-plated back side of power chip, power chip is sintered in base by sintering process
In the silver-plated area of plate top surface, power chip is made to be sintered together with substrate.
In conjunction with shown in Fig. 2, Fig. 2 is the structural schematic diagram of substrate.Substrate 10 can be made of silicon nitride ceramics.On the substrate 10
It is formed with insulation tank 14, which is divided into chip sintering zone 12 and welding section 13 by the top surface of substrate 10.Chip sintering zone
12 include two pieces of silver-plated areas, the silver-plated area 122 close to welding section 13 for being sintered power chip, another silver-plated area 121 be used for
The pin of lead frame welds, which can be drain pin.In addition to silver-plated region, other regions are equal for the top surface of substrate 10
It is coated with layers of copper.
More preferably, when the top surface of substrate 10 is silver-plated, at the same it is silver-plated in the bottom surface of substrate 10, and the silver-plated bottom surface is being moulded
It is honored as a queen and still exposes package casing, cannot be only used for the heat dissipation of substrate 10, can also be mounted in a manner of being sintered Ag films
On the external circuit board or on other application device.
The substrate of power chip can be made of carbofrax material, and it is brilliant that high-power field-effect is integrated on the power chip
Body pipe and control circuit.It is silver-plated at the back side of the substrate of the power chip.
Ag films are the films made of metallic silver.And the thickness of Ag films is less than 100 μm.
In sintering process, Ag films are placed on to the lower section at the silver-plated back side of power chip, and power chip is placed in patch
Below the ferrule of machine, the temperature of ferrule is set to reach 100-150 degree using heating rod, ferrule pushes power chip and silver is thin
Film, and apply the pressure of 0.3MPa~0.6MPa, Ag films are pre-sintered are carried on the back in power chip as a result, by residence time 100ms
The silver-plated area in face；Then, after completing the pre-sintering of Ag films and power chip, the said goods are transferred to sintering machine, then lead to
It crosses above-mentioned pre-sintering method the silver-plated area 122 of above-mentioned Ag films and substrate 10 combines, with this by power chip and substrate
10 pre-sinterings are integral.
In the present embodiment, the silver-plated area of substrate 10 can be pre-sintered two power chips, increase as a result, single after encapsulating
The output power of package module meets high power requirements of the electric vehicle industry to electronic device.In conjunction with shown in Fig. 3, Fig. 3 is work(
Rate chip and the sintered structural schematic diagram of substrate, two power chips 30 are symmetrically sintered in the silver-plated area 122 of substrate.Each work(
Rate chip 30 includes two source electrodes 31 and a gate pole 32.
It is appreciated that according to practical application, in other embodiments, on substrate 10 also a sinterable power chip or
Multiple power chips.
Complete after being pre-sintered, by integral power chip, Ag films and substrate 10 be placed in upper mold and lower mold it
Between, so that the temperature of the upper mold and lower mold is reached 200-300 degree using heating rod, upper mold is by kinetic pump to power core
The entirety that piece, Ag films and substrate are combined into is applied more than the pressure of 15Mpa, is sintered 3~4 minutes, by power chip and substrate
10 sinter fine and close connector into.
Step S2:The process of connecting lead wire frame, the substrate and power chip that sintering is completed pass through welding and lead key
The mode of conjunction, connect with lead frame.
In conjunction with shown in Fig. 4 and Fig. 5, Fig. 4 is the structural schematic diagram of lead frame, and Fig. 5 is the structural schematic diagram of lead wire unit.
Lead frame 20 includes multiple row lead wire unit 21, and each column lead wire unit 21 includes drain pin 214, the first source electrode pin 211, the
Two source electrode pins 212 and the gate pole pin 213 opposite with the second source electrode pin 212.Wherein, after rib cutting, the first source electrode
Pin 211 is connected with the second source electrode pin 212.
The substrate 10 being sintered into one and power chip are placed between drain pin 214 and the first source electrode pin 211, and
Substrate 10, power chip, lead frame 20 are put into togerther with preforming tin-lead weld tabs, scaling powder by capturing machine automatically
In special fixture, by vacuum back-flow Welding, (sour gas (example at a high temperature of 360 degree and in the environment of sour gas
Such as, formic acid) oxidation film of substrate and lead frame can be removed, ensure welding wellability), make substrate 10, power chip 30 with
Lead frame 20 is preferably combined with other devices, and the generation in cavity is reduced.By a wherein lead wire unit 21 for lead frame 20
Drain pin 214 and the silver-plated area 121 of substrate 10 be welded to connect, by the first source electrode pin 211 and work(of the lead wire unit 21
The source solder of rate chip connects.After welding is completed, flux cleaning and plasma cleaning are carried out.After the completion of cleaning, reduction
The oxidation reaction of substrate 10 and lead frame 20, and activating welding region.
Then, by the welding section 13 of the gate pole pin 213 of lead wire unit 21 and substrate 10, the gate pole of a wherein power chip
It is connected by wire bonding, the gate pole of another power chip is bonded connection by lead with the welding section 13 of substrate 10.Wherein, exist
In one specific embodiment, which can be aluminum steel.
In conjunction with shown in Fig. 3 and Fig. 6, Fig. 6 is the structural schematic diagram after substrate, power chip and lead frame connection.Lead
The wherein drain pin 214 of a lead wire unit 21 and the silver-plated area 121 of substrate 10 of frame 20 are welded to connect, the lead wire unit 21
The source electrode 31 of the first source electrode pin 211 and power chip 30 be welded to connect, the gate pole pin 213 and substrate of the lead wire unit 21
10 welding section 13, the wherein power chip 30 in two power chips gate pole 32 pass through lead 23 bonding connection, Ling Yigong
The gate pole 32 of rate chip 30 is bonded connection by lead 23 with the welding section 13 of substrate 10.
Further, the first source electrode pin 211 of the lead wire unit 21 extends to form connection close to one end of drain pin 214
Line 211a.Connecting line 211a is integrally formed with the first source electrode pin 211.Connecting line 211a substitutes traditional metal wire connection
Power chip not only can avoid power chip and connect the complicated technology of more metal wire (since power chip power is larger, even
When connecing power chip and lead wire unit, it is necessary to more metal wire is used, can just bear corresponding power, and power chip itself
It is smaller, it is big to connect difficulty in more metallization line process), defective workmanship is reduced, and also ensure power chip and lead wire unit
The stability of connection.
In conjunction with shown in Fig. 7, Fig. 7 is the side schematic view of the connecting line of the first source electrode pin, and connecting line 211a is in wave
Shape, corrugated connecting line 211a include at least two grooves 2111 and at least one raised 2112, wherein two grooves 2111
Bottom respectively with two source contacts of power chip 30, to realize the source electrode of power chip 30 and the first source of lead wire unit 21
Pole pipe foot 211 connects.
In the figure 7, the first source electrode pin 211 includes two couples of connecting line 211a, is respectively used to two power chips 30 of connection
Source electrode.Each connecting line of each pair of connecting line 211a is connect with two source electrodes 31 of the same power chip 30, and every
It is spaced to two connecting lines of connecting line 211a, with when plastic packaging is molded, capsulation material can enter two connecting lines
In gap between 211a, ensures that capsulation material is combined closely with the formation of lead frame 20, prevent capsulation material and power core
Layering is generated between piece, ensures the reliability of plastic packaging.
Similarly, the drain pin 214 of lead wire unit 21 includes pin body 2141 and from the pin body 2141 to the
One source electrode pin direction, 211 multiple boss 2142 outstanding for being welded to connect with substrate 10, multiple boss 2142 are spaced
It lays, with when plastic packaging is molded, capsulation material can enter in the gap between two boss 2142, ensures capsulation material and draw
The formation of wire frame 20 is combined closely, and is prevented from generating layering between capsulation material and substrate 10, is ensured the reliability of plastic packaging.
Step S3：After plastic packaging process, substrate and power chip are connected to lead frame, exposed region is needed to place in substrate
One layer of supporting film is molded the plastic packaging region of lead frame, forms package casing, makes package casing cladding substrate, work(
Rate chip and part lead frame, part lead frame expose package casing.
After substrate 10 and power chip 30 are connected on lead frame 20, by substrate 10, power chip 30 and lead frame
20 are put into plastic package die, and substrate 10 needs exposed region to place one layer of supporting film.Later, it is injected in plastic package die
Capsulation material simultaneously toasts, and forms package casing in the plastic packaging region of lead frame 20, which coats substrate 10, power core
Piece 30 and part lead frame 20.Lead frame 20 is not used to connect with external circuit by the part of plastic packaging.
It should be noted that since lead frame 20 includes multiple lead wire units, there are one bases for the connection of each lead wire unit
Plate, therefore, when placing supporting film, which can cover the exposed area of the substrate in multiple lead wire units simultaneously
Domain.
Wherein, capsulation material is the resin material that glass transition temperature temperature is 195 DEG C~205 DEG C.With traditional plastic packaging material
Material (glass transition temperature is 120 DEG C~130 DEG C) is compared, and the resin material of high glass transition temperature (195 DEG C~205 DEG C) can ensure
Use of the device under the adverse circumstances such as high temperature and pressure.
Because substrate 10 needs exposed region to placed one layer of supporting film, therefore, plastic packaging region is overflowed in injection moulding process
Capsulation material will be left on supporting film, without remaining on the exposed area of substrate 10, eliminate excessive glue and tin plating
Technique, and then ensure the heat dissipating properties of encapsulated device and the thermal conductivity of pin.
In addition, substrate 10 needs exposed region silver coated, during plastic packaging, supporting film is made to cover 10 bottom surface of substrate
Silver-plated area, make the silver-plated area of 10 bottom surface of substrate not by plastic packaging, in this way, while ensureing the heat dissipation of 10 bottom surface of substrate, after plastic packaging
Structure can also be by the silver-plated area of 10 bottom surface of substrate and Ag films sintering on the external circuit board or on other application device.
More preferably, to prevent substrate 10 from warpage occurs in plastic packaging, during plastic packaging, moveable thimble top pressure is utilized
Substrate 10.The thimble under the effect of external force, can move up.So that with the entrance of capsulation material, thimble is gradually to moving up
It is dynamic, so that capsulation material is gradually covered entire substrate 10, ensures the leakproofness of plastic packaging.
It can be effectively prevent 10 warpage of substrate by thimble top pressure substrate 10, it is exposed to prevent capsulation material from flowing to substrate 10
On region.
Step S4：Rib cutting process removes supporting film, carries out rib cutting to lead frame, obtains the Encapsulation Moulds of power device
Block.
The supporting film on lead frame 20 is removed, and takes away the excessive glue being attached on supporting film simultaneously.After plastic packaging
Lead frame 20 carries out rib cutting, obtains the package module of single power device.
In conjunction with shown in Fig. 8 and Fig. 9, Fig. 8 is the front schematic view of the package module of power device, and Fig. 9 is power device
The schematic rear view of package module.After 20 rib cutting of lead frame, the multiple power devices being connected on lead frame 20 are detached
At independent package module one by one.The package module 40 of power device is by power chip 30, the substrate of load power chip 30
10 and the internal pin of lead frame 20 be partially encapsulated in package casing 42, and by the first source electrode pin 211 of lead frame 20,
The external pin partial denudation of second source electrode pin 212, gate pole pin 213 and drain pin 214 goes out package casing 42, this is exposed
External pin is electrically connected with external circuit foundation.
The part that first source electrode pin 211 exposes package casing 42 with the second source electrode pin 212 is silver coated, and silver
Layer coats exposed pin, can so make the conduction between the pin of power chip 30 and circuit board or other application device
Property, contact are more preferable, and prevent from aoxidizing.
It should be noted that the first source electrode pin 211, the second source electrode pin 212, gate pole pin 213 and drain pin 214 1
It is partially encapsulated in package casing 42, a part exposes package casing 42, here, the pin portion that will be encapsulated in package casing 42
Divide and be defined as internal pin, the pin part for exposing package casing 42 is defined as external pin.
After plastic packaging, the region of the corresponding thimble top pressure forms top pressure hole 41, and the top pressure hole 41 is blind hole, so that substrate
10, power chip 30 is isolated with outside air.Package casing 42 is exposed in the silver-plated area 15 of 10 bottom surface of substrate, so as to the package module
40 can be installed on circuit boards by way of Ag films sintering.
Finally, the encapsulation for completing power device obtains the package module of power device, is able to be applied to each electronic product
In.
The present invention power device packaging method, including sintering process, the process of connecting lead wire frame, plastic packaging process and
The back side of rib cutting process, power chip is silver-plated, and the top surface of substrate is silver-plated, and Ag films are bonded in the silver-plated back side of power chip, leads to
Power chip is sintered in the silver-plated region of substrate top surface by oversintering technique, and power chip is made to be sintered together with substrate, by
In the silver-plated area of power chip and Ag films phase sintering, while Ag films silver-plated area's phase sintering with substrate top surface again, and all
Be between belonging to same metal sintering fusion, therefore, Ag films well with the silver layer and substrate top surface on power chip
Silver layer blend, reduce generation empty between power chip and substrate, it might even be possible to avoid cavity completely, enhance work(
Heat conductivility between rate chip and substrate meets requirement of the electric vehicle field to power device high-termal conductivity.And due to
Ag films thickness is unevenly distributed after will not being coated with as elargol or tin cream, after sintering, the silver between substrate and power chip
Film thickness is highly uniform, it is possible to prevente effectively from power chip warpage, reduces cavity so that connecing between substrate and power chip
It is more preferable to touch property, conductibility.It is sintered the substrate and power chip completed, by way of welding and wire bonding, with lead frame
Connection.It so establishes and connects with lead frame, it is convenient to be electrically connected with external circuit.After completing the connection with lead frame,
It needs exposed area to place one layer of supporting film in substrate, the capsulation material in spilling plastic packaging region is made to flow on the supporting film, from
And ensure there is no excessive glue to avoid encapsulation metacoxal plate dirty on substrate, reduce the technological process for subsequently going excessive glue.And then it avoids dirty
Dirt influences the heat dissipating properties of encapsulated device.The plastic packaging region of lead frame is molded, package casing is formed, makes outside encapsulation
Shell coats substrate, power chip and part lead frame, and part lead frame exposes package casing, to be connect with external circuit.
After the completion of plastic packaging, the supporting film on lead frame is removed.Rib cutting is carried out to lead frame, just obtains power device package mould
Block.The present invention separately provides a kind of package module of the power device made of above-mentioned packaging method, in conjunction with Fig. 3, Fig. 5, Fig. 7 and figure
Shown in 8, the package module 40 of the power device includes package casing 42, substrate 10, power chip 30 and lead wire unit 21.
Top pressure hole 41 is formed on package casing 42.Top pressure hole 41 is blind hole, so that substrate 10, power chip 30 and the external world
Air insulated, that is, also there is one layer of capsulation material layer, capsulation material layer outside air has been isolated between top pressure hole 41 and substrate 10
With substrate 10.
In conjunction with shown in Fig. 2, substrate 10 can be made of silicon nitride ceramics.It is formed with insulation tank 14 on the substrate 10, the insulation
The top surface of substrate 10 is divided into chip sintering zone 12 and welding section 13 by slot 14.Chip sintering zone 12 includes two pieces of silver-plated areas, close
The silver-plated area 122 of welding section 13 is used to weld with the pin of lead wire unit for being sintered power chip 30, another silver-plated area 121,
The pin can be drain pin.In addition to silver-plated region, other regions are coated with layers of copper for the top surface of substrate 10.
It is also silver-plated in the bottom surface of substrate 10 when the top surface of substrate 10 is silver-plated, and the silver-plated area 15 of 10 bottom surface of substrate exposes
Package casing 42 while heat dissipation with substrate 10, can also be sintered by Ag films on the external circuit board or other application
On device.
The substrate of power chip 30 can be made of carbofrax material, and high-power field effect is integrated on the power chip 30
Answer transistor and control circuit.The back side of power chip 30 is silver-plated, and the silver-plated back side of the power chip 30 by Ag films with
The silver-plated area of 10 top surface of substrate sinters into together, and substrate 10 and power chip 30 is so made to be combined into fine and close one.
Lead wire unit 21 includes drain pin 214, the first source electrode pin 211 opposite with drain pin 214, the second source electrode
Pin 212 and the gate pole pin 213 opposite with the second source electrode pin 212.Wherein, the first source electrode pin 211 and the second source electrode
Pin 212 is connected.
Each pin of lead wire unit 21 is welded to connect or is bonded connection with substrate 10, power chip 30, lead wire unit 21
Pin part is coated in package casing 42, and package casing 42 is exposed in part, and the pin of part exposing package casing 42 is direct
It establishes and connects with external circuit.
More specifically, the silver-plated area of substrate 10 can be pre-sintered two power chips, be sealed with increasing single power device
Die-filling piece of output power, in conjunction with shown in Fig. 6, the drain pin 214 of lead wire unit 21 connects with the welding of silver-plated area 121 of substrate 10
It connects, the source electrode 31 of the first source electrode pin 211 and power chip 30 of the lead wire unit 21 is welded to connect, the door of the lead wire unit 21
The gate pole 32 of a wherein power chip 30 of the pole pipe foot 213 with the welding section 13 of substrate 10, in two power chips passes through lead 23
Bonding connection, the gate pole 32 of another power chip 30 are bonded connection by lead 23 with the welding section 13 of substrate 10.
First source electrode pin 211 extends to form connection close to one end of drain pin 214 (close to one end of power chip)
Line 211a.Connecting line 211a is integrally formed with the first source electrode pin 211.Connecting line 211a substitutes traditional metal wire connection
Power chip not only can avoid power chip and connect the complicated technology of more metal wire (since power chip power is larger, even
When connecing power chip and lead wire unit, it is necessary to more metal wire is used, can just bear corresponding power, and power chip itself
It is smaller, it is big to connect difficulty in more metallization line process), and also ensure the stability that power chip is connected with lead wire unit.
In conjunction with shown in Fig. 7, connecting line 211a undulates, corrugated connecting line 211a includes at least two grooves
2111 and at least one raised 2112, wherein the bottom of two grooves 2111 respectively with two source contacts of power chip 30, with
Realize the connection of the source electrode and the first source electrode pin 211 of power chip 30.
In the figure 7, the first source electrode pin 211 includes two couples of connecting line 211a, is respectively used to two power chips 30 of connection
Source electrode.Each connecting line of each pair of connecting line 211a is connect with two source electrodes 31 of the same power chip 30, and every
It is spaced to two connecting lines of connecting line 211a, in plastic packaging, capsulation material can enter two connecting line 211a
Between gap in, prevent between capsulation material and power chip generate layering, ensure the reliability of plastic packaging.
Similarly, the drain pin 214 of lead wire unit 21 includes pin body 2141 and from the pin body 2141 to the
One source electrode pin direction, 211 multiple boss 2142 outstanding for being welded to connect with substrate 10, multiple boss 2142 are spaced
It lays, with when plastic packaging is molded, capsulation material can enter in the gap between two boss 2142, prevent capsulation material and base
Layering is generated between plate 10, ensures the reliability of plastic packaging.
The present invention separately provides a kind of and above-mentioned power chip and the matched power device of substrate lead frame.In conjunction with figure
Shown in 4 and Fig. 5, lead frame 20 includes multiple row lead wire unit, the knot of the structure of each lead wire unit and above-mentioned lead wire unit 21
Structure is identical, and this is no longer going to repeat them.
First source electrode pin of the lead wire unit of the lead frame of the present invention is formed with connecting line, and the connecting line is for connecting
The source electrode of power chip is substituted traditional metal wire by connecting line, not only be can avoid power chip and is connected answering for more metal wire
General labourer's skill, and also ensure the stability of connection.
The preferable possible embodiments that these are only the present invention, not limit the scope of the invention, all with the present invention
Equivalent structure variation made by specification and accompanying drawing content, is included within the scope of protection of the present invention.
Claims (11)
1. a kind of packaging method of power device, which is characterized in that including：
Sintering process：Power chip and substrate are provided, it is silver-plated at the back side of the power chip, it is plated in the top surface of the substrate
Preforming Ag films are bonded in the silver-plated back side of the power chip by silver, are sintered power chip by sintering process
In the silver-plated area of the substrate top surface, the power chip is made to be sintered together with the substrate；
The process of connecting lead wire frame：The substrate and the power chip that sintering is completed, pass through welding and wire bonding
Mode, connect with lead frame；
Plastic packaging process：After the substrate and the power chip are connected to the lead frame, exposed area is needed in the substrate
One layer of supporting film is placed in domain, is molded to the plastic packaging region of the lead frame, is formed package casing, is made outside the encapsulation
Shell coats the substrate, the power chip and the part lead frame, and part lead frame exposes the package casing；
Rib cutting process：The supporting film is removed, rib cutting is carried out to the lead frame, obtains the package module of power device.
2. the packaging method of power device according to claim 1, which is characterized in that in sintering process, by the work(
Rate chip, the Ag films and the substrate are placed between upper mold and lower mold, make the upper mold under using heating rod
The temperature of mold reaches 200~300 degree, and the upper mold is by kinetic pump to the power chip, Ag films and described
Substrate is applied more than the pressure of 15Mpa, is sintered 3~4 minutes.
3. the packaging method of power device according to claim 1, which is characterized in that
Before sintering process, insulation tank is formed on the substrate, and the top surface of the substrate 10 is divided into core by the insulation tank
The silver-plated area of piece sintering zone and welding section, the substrate top surface is located in the chip sintering zone；
During connecting lead wire frame, by vacuum back-flow Welding, by the drain pin of the lead frame with it is described
The silver-plated area of substrate top surface is welded to connect, and the source solder of the source electrode pin of the lead frame and the power chip is connected
It connects, the gate pole pin of the lead frame and the gate pole of the welding section of the substrate, the power chip are connected by wire bonding
It connects.
4. the packaging method of power device according to claim 3, which is characterized in that the source electrode pin of the lead frame
Including the first source electrode pin and the second source electrode pin, the first source electrode pin forms connection close to one end of the power chip
Line, the connecting line undulate, the corrugated connecting line include at least two grooves, wherein the bottom difference of two grooves
It is connect with two source electrodes of the power chip.
5. the packaging method of power device according to claim 1, which is characterized in that during plastic packaging, utilization is removable
Substrate described in dynamic thimble top pressure, to prevent the substrate warp, with the entrance of capsulation material, the thimble moves up,
The capsulation material is set to cover entire substrate；
During plastic packaging, glass transition temperature is used to be moulded to the plastic packaging region for 195 DEG C~205 DEG C of resin material
Envelope.
6. the packaging method of power device according to claim 1, which is characterized in that silver-plated in the top surface of the substrate
When, while it is silver-plated in the bottom surface of the substrate；
During plastic packaging, the supporting film is covered in the silver-plated area of the substrate bottom surface, and the size of the supporting film
More than the silver-plated area of the substrate bottom surface；
The substrate of the power chip is silicon carbide substrates.
7. a kind of package module of power device, which is characterized in that including
Package casing；
Substrate is encapsulated in the package casing, and the substrate has bottom surface and top surface, and the top and bottom are silver-plated, institute
The silver-plated area for stating substrate bottom surface is exposed outside the package casing；
Power chip is encapsulated in the package casing, and the back side of the power chip is silver-plated, the silver-plated back of the body of the power chip
Face is sintered into together by the silver-plated area of Ag films and the substrate top surface；
Lead wire unit, each pin of the lead wire unit is welded to connect with the substrate, the power chip or wire bonding connects
It connects, the pin part of the lead wire unit is coated in the package casing, partly exposes the package casing.
8. the package module of power device according to claim 7, which is characterized in that the substrate is by silicon nitride ceramics system
At being formed with insulation tank on the substrate, the top surface of the substrate is divided into chip sintering zone and welding section by the insulation tank；
The silver-plated region of the substrate top surface is located in the chip sintering zone and is divided into two pieces of regions, one of silver-plated area
Domain is used to weld with the drain pin of lead wire unit for being sintered the power chip, another piece of silver-plated region；
The welding section is coated with layers of copper, and the layers of copper is used to be bonded connection with the gate pole pin of the lead wire unit.
9. the package module of power device according to claim 7, which is characterized in that the top surface sintering of the substrate has two
The substrate of a power chip, the power chip is substrate made of silicon carbide, and the power chip includes two source electrodes
With a gate pole；
The lead wire unit includes drain pin, the first source electrode pin, the second source electrode pin and gate pole pin, first source
Pole pipe foot forms connecting line, the connecting line undulate, the corrugated connecting line close to one end of the drain pin
Including at least two grooves, the bottom of two of which groove is connect with two source electrodes of the power chip respectively；
Be formed with top pressure hole on the package casing, the top pressure hole is blind hole so that the substrate, the power chip with it is outer
Boundary's air insulated.
10. a kind of lead frame of power device, which is characterized in that including multiple row lead wire unit, each column lead wire unit includes leakage
Pole pipe foot, the first source electrode pin, the second source electrode pin and gate pole pin, the first source electrode pin and the second source electrode pipe
Foot connects；
The first source electrode pin forms connecting line close to one end of the drain pin, and the connecting line undulate is described
Corrugated connecting line includes at least two grooves, the bottom of two of which groove respectively with two source electrodes of the power chip
Connection；
The drain pin of the lead wire unit is used to be welded to connect with the substrate of load power device, and the first of the lead wire unit
For being connect with the source solder of the power chip, the gate pole pin of the lead frame is used for and the power source electrode pin
The gate pole bonding connection of chip.
11. the lead frame of power device according to claim 10, which is characterized in that there is at least sintering on the substrate
Two power chips, correspond to each power chip, and the first source electrode pin is formed with two institutes close to one end of power chip
Connecting line is stated, two connecting lines are spaced；
The drain pin includes pin body and outstanding multiple from the pin body to the first source electrode pin direction
Boss, the multiple boss interval are laid, and for being welded to connect with the substrate；
The connecting line is integrally formed with the first source electrode pin.
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| CN201810276023.3A CN108321129A (en) | 2018-03-30 | 2018-03-30 | The packaging method and its package module of power device, lead frame |
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|---|---|---|---|
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| CN110942998A (en) * | 2019-12-06 | 2020-03-31 | 西安中车永电电气有限公司 | Chip welding method of IPM module |
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| CN113228265A (en) * | 2019-07-03 | 2021-08-06 | 富士电机株式会社 | Circuit structure of semiconductor assembly |
| CN113594053A (en) * | 2021-06-24 | 2021-11-02 | 深圳基本半导体有限公司 | All-metal sintering power module interconnection process |
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