CN215183904U - Power module unit and power module combination unit - Google Patents

Abstract

The utility model discloses a power module unit. The power module unit comprises a substrate with a chip mounted on the surface, a shell with an opening structure at the bottom and a main terminal, wherein a containing cavity is formed inside the shell and used for containing the chip and being combined with the substrate in a sealing mode, main terminal mounting holes are formed in two opposite sides of the shell, one end of the main terminal is electrically connected with the substrate through the mounting holes, and the other end of the main terminal extends out of the shell. The main terminal comprises a P terminal, two N terminals and two output terminals, the P terminal and the two N terminals are arranged on the same side of the shell, the P terminal is located between the two N terminals, and the two output terminals are arranged on one side opposite to the P terminal and the two N terminals. The utility model also discloses a power module combination unit. Therefore, the parasitic inductance inside the module can be reduced while the power density is improved.

Description

Power module unit and power module combination unit

Technical Field

The utility model relates to a power module unit and power module combination unit.

Background

The semiconductor power module unit plays a very important role in the current rapidly-developed industrial field, and the power module unit formed by packaging the power device can be widely applied to the application fields of photovoltaic, electric vehicles and the like, so that the power module unit takes high power density and high reliability as development routes and targets.

In order to achieve high output power, a plurality of sub-modules are usually operated in parallel, however, in the module packaging process, the design often causes the problems of overlarge module size, increased parasitic inductance and the like in the design for improving the high power density of the system. Therefore, in some high power applications, with the rapid development of the third generation semiconductor, especially the continuous maturation of the silicon carbide device, the demand for the power module unit packaging structure with high power density and low parasitic inductance is more urgent.

SUMMERY OF THE UTILITY MODEL

Therefore, it is desirable to provide a power module unit and a power module assembly unit with low parasitic inductance and high power density.

The utility model discloses a reach the technical scheme that above-mentioned purpose proposed as follows:

a power module unit comprises a substrate with a chip mounted on the surface, a shell with an opening structure at the bottom and a main terminal, wherein an accommodating cavity is formed in the shell and used for accommodating the chip through the opening structure and being combined with the substrate in a sealing manner; the main terminal comprises a P terminal, two N terminals and two output terminals, the P terminal and the two N terminals are arranged on the same side of the shell, the P terminal is located between the two N terminals, the two N terminals are homopotential terminals, the two output terminals are arranged on one side opposite to the P terminal and the two N terminals, and the two output terminals are homopotential terminals.

Furthermore, the power module unit further comprises a lead frame, wherein the lead frame is integrally formed, and the lead frame is electrically connected with the chip and the substrate in a metal sintering mode to form a circuit of the power module unit.

Further, the metal sintering is copper sintering or silver sintering, and the sintering thickness is 10 um-200 um.

Furthermore, the thickness of the lead frame is 0.3 mm-1.5 mm.

Further, the substrate is a copper-clad ceramic plate.

Further, the chip comprises a plurality of wide bandgap semiconductor devices to form a quarter-bridge module circuit or a half-bridge module circuit or a full-bridge module circuit.

Furthermore, the power module combination unit comprises a heat dissipation plate and a plurality of power module units, and the power module units are fixed on the heat dissipation plate in a metal sintering mode.

Further, the heating panel includes heat dissipation bottom plate and a plurality of radiating piece, heat dissipation bottom plate is equipped with prefabricated angularity, and every radiating piece is needle fin formula structure, a plurality of radiating pieces set up in one side of heat dissipation bottom plate, the power module unit fixed set up in keep away from on the heat dissipation bottom plate the opposite side of a plurality of radiating pieces.

Further, the number of the power module units is one or three.

The power module unit and the power module combination unit are characterized in that a P terminal and two N terminals are arranged on the same side of a shell, the P terminal is positioned between the two N terminals, and two output terminals are arranged on the opposite sides of the P terminal and the two N terminals; in addition, different module circuits such as a power module unit quarter-bridge module circuit, a half-bridge module circuit, a full-bridge module circuit, and the like are formed by integrally molded lead frames. Therefore, the parasitic inductance inside the module can be greatly reduced while the reliability of the power module unit is enhanced and the power density is improved, and the power module unit can be connected through a sintering process and a heat dissipation plate to combine different circuit modules to form a power module combination unit. Therefore, different functional requirements are flexibly met, and the application range is expanded.

Drawings

Fig. 1 is a schematic structural diagram of a power module unit according to a preferred embodiment of the present invention.

Fig. 2 is an exploded view of a power module unit according to a preferred embodiment of the present invention.

Fig. 3 is a schematic plan view of a power module assembly unit according to a preferred embodiment of the present invention.

Fig. 4 is a schematic cross-sectional view of a preferred embodiment of the power module assembly unit provided in fig. 3.

Fig. 5 is a schematic plan view of another preferred embodiment of a power module assembly unit according to the present invention.

Fig. 6 is a schematic cross-sectional view of a preferred embodiment of the power module assembly unit provided in fig. 5.

Description of the main elements

Power module unit 100

Chip 10

Substrate 20

Housing 30

Outer casing 32

Cover plate 34

Main terminal 40

P terminal 42

N terminal 44

Output terminal 46

Lead frame 50

Power module assembly unit 200

Heat sink 300

Heat dissipation base plate 310

Heat sink 320

The following detailed description of the invention will be further described in conjunction with the above-identified drawings.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

Referring to fig. 1 and fig. 2, fig. 1 is a schematic structural diagram of a preferred embodiment of a power module unit provided in the present invention, and fig. 2 is an exploded structural diagram of a preferred embodiment of a power module unit provided in the present invention. As shown in the drawing, the power module unit 100 includes a substrate 20 with a chip 10 surface mounted thereon, a housing 30 with an opening structure at the bottom, and a main terminal 40. The housing 30 has a receiving cavity formed therein for receiving the chip 10 through the opening structure and being hermetically combined with the substrate 20. In the present embodiment, the housing cavity of the housing 30 is encapsulated with resin to mold the chip 10. Main terminal mounting holes are also formed at opposite sides of the housing 30. One end of the main terminal 40 is electrically connected to the substrate 20 through the mounting hole, and the other end of the main terminal 40 extends out of the housing. The main terminal 40 includes a P terminal 42, two N terminals 44, and two output terminals 46. The P-terminal 42 and the two N-terminals 44 are mounted on the same side of the housing 30, and the P-terminal 42 is located between the two N-terminals 44. The two N terminals 44 are the same potential terminals. The two output terminals 46 are mounted on the side opposite to the P terminal 42 and the two N terminals 44. The two output terminals 46 are common potential terminals. Therefore, the present invention designs two N terminals 44 at the same potential to be symmetrical to the two sides of the P terminal, and designs two output terminals 46 at the same potential to be symmetrical to the P terminal 42 and the opposite side of the N terminal 44, so that the parasitic inductance inside the power module unit is greatly reduced by the symmetrical structure.

In this embodiment, the housing 30 may include a shell 32 and a cover plate 34, and the shell 32 and the cover plate 34 are connected by a sealant. In other embodiments, the housing 32 and the cover 34 may also be a unitary structure.

Further, the power module unit 100 further includes a lead frame 50. The lead frame 50 is integrally formed. The lead frame 50 is electrically connected to the chip 10 and the substrate 20 by metal sintering, so as to constitute a circuit of the power module unit 100. The lead frame 50 is plastically molded in the housing 30. In the present embodiment, the lead frame 50 is made of a metal material, such as copper. The thickness of the lead frame 50 is 0.3mm to 1.5 mm. In this way, the bonding strength between the chip 10, the substrate 20, and the case 30 can be increased, and the power module unit 100 can be more reliably secured and can be miniaturized, thereby increasing the power density.

In the present embodiment, the metal sintering is copper sintering or silver sintering, and the sintering thickness is 10 to 200 um. Because copper or silver's thermal conductivity is higher, compares traditional lead bonding's mode, the utility model discloses can improve power module unit 100's service temperature scope, make it work under higher temperature environment, and can reduce the thermal resistance, thereby promote power module unit 100's reliability.

In the present embodiment, the substrate 20 is a copper clad ceramic board.

In the present embodiment, the chip 10 includes several wide bandgap semiconductor devices to form a quarter-bridge module circuit, a half-bridge module circuit, or a full-bridge module circuit. I.e. constituting either a 1in1 power module cell or a 2in1 power module cell or a 6in1 power module cell. In other embodiments, the chip 10 may further include a plurality of wide bandgap semiconductor devices, thermistors, and current sensors to form a smart power module unit circuit.

Referring to fig. 3 to fig. 6, the present invention further provides a power module assembly unit 200. The power module assembly unit 200 includes a plurality of power module units 100 and a heat sink 300. The power module units 100 are fixed on the heat dissipation plate 300 in a close-packed manner by metal sintering, and the output terminals 46 of each power module unit 100 are on the same side.

In a preferred embodiment, the number of the power module units 100 is one, and the power module units 100 form a quarter-bridge circuit or a half-bridge circuit (please refer to fig. 3 to 4). In another preferred embodiment, the number of the power module units 100 is three, and the three power module units 100 are connected in parallel to form a half-bridge circuit (see fig. 5 to 6). Therefore, the service life of the power module unit can be prolonged, and the application range is expanded.

In this embodiment, the heat dissipation plate 300 includes a heat dissipation base plate 310 and a plurality of heat dissipation members 320, and the heat dissipation base plate 310 and the plurality of heat dissipation members 320 are integrally formed. The heat-dissipating base plate 310 is provided with a pre-fabricated warping degree. In the present embodiment, each heat sink 320 is of a pin fin structure. The heat dissipation members 320 are disposed on one side of the heat dissipation base plate 310, and the power module unit 100 is fixedly disposed on the other side of the heat dissipation base plate 310 away from the heat dissipation members 320. Therefore, the heat dissipation capability of the heat dissipation plate 300 to the power module unit 100 can be enhanced, and meanwhile, due to the specific structure of the power module unit 100, the connection reliability is higher, so that the sintering pressure generated when the power module unit 100 is combined with the heat dissipation plate 300 can be borne, and the technological requirement of sintering connection between the power module unit 100 and the heat dissipation plate 300 is met.

The present invention provides the P-terminal 42 and the two N-terminals 44 on the same side of the housing 30, wherein the P-terminal 42 is located between the two N-terminals 44, and the P-terminal 42 and the two N-terminals 44 are opposite to each other, and two output terminals 46 are provided on the opposite sides of the P-terminal 42 and the two N-terminals 44; in addition, different module circuits such as a power module unit quarter-bridge module circuit, a half-bridge module circuit, a full-bridge module circuit, and the like are formed by integrally molded lead frames. Therefore, the parasitic inductance inside the module can be greatly reduced while the reliability of the power module unit is enhanced and the power density is improved, different functional requirements are flexibly met through different combinations of the power module units, and the application range is expanded.

The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.

Claims (9)

1. A power module unit is characterized by comprising a substrate with a chip mounted on the surface, a shell with an opening structure at the bottom and a main terminal, wherein an accommodating cavity is formed in the shell and used for accommodating the chip through the opening structure and being hermetically combined with the substrate; the main terminal comprises a P terminal, two N terminals and two output terminals, the P terminal and the two N terminals are arranged on the same side of the shell, the P terminal is located between the two N terminals, the two N terminals are homopotential terminals, the two output terminals are arranged on one side opposite to the P terminal and the two N terminals, and the two output terminals are homopotential terminals.

2. The power module unit according to claim 1, further comprising a lead frame integrally formed and electrically connected to the chip and the substrate by metal sintering to constitute a circuit of the power module unit.

3. The power module cell of claim 2, wherein the metal sintering is copper sintering or silver sintering, and the sintering thickness is 10-200 um.

4. The power module unit as claimed in claim 2, wherein the thickness of the lead frame is 0.3mm to 1.5 mm.

5. The power module unit of claim 1, wherein the substrate is a copper clad ceramic board.

6. The power module cell of claim 1, wherein the chip includes a number of wide bandgap semiconductor devices to form a quarter bridge module circuit or a half bridge module circuit or a full bridge module circuit.

7. A power module assembly unit, characterized in that, the power module assembly unit comprises a heat sink and a plurality of power module units according to any one of claims 1-6, and the power module units are fixed on the heat sink by means of metal sintering.

8. The power module assembly of claim 7, wherein the heat sink includes a heat sink base plate and a plurality of heat sinks, the heat sink base plate is provided with a pre-fabricated warpage, each heat sink is a pin fin structure, the plurality of heat sinks are disposed on one side of the heat sink base plate, and the power module is fixedly disposed on the other side of the heat sink base plate away from the plurality of heat sinks.

9. The power module combining unit according to claim 7, wherein the number of the power module units is one or three.

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